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Sample records for ga freeport tx

  1. Price of Freeport, TX Liquefied Natural Gas Exports to Mexico...

    Energy Information Administration (EIA) (indexed site)

    Freeport, TX Liquefied Natural Gas Exports to Mexico (Dollars per Thousand Cubic Feet) Price of Freeport, TX Liquefied Natural Gas Exports to Mexico (Dollars per Thousand Cubic...

  2. Price Liquefied Freeport, TX Natural Gas Exports Price to United...

    Annual Energy Outlook

    United Kingdom (Dollars per Thousand Cubic Feet) Price Liquefied Freeport, TX Natural Gas Exports Price to United Kingdom (Dollars per Thousand Cubic Feet) Decade Year-0 Year-1...

  3. Freeport, TX Liquefied Natural Gas Exports to Turkey (Million...

    Energy Information Administration (EIA) (indexed site)

    Turkey (Million Cubic Feet) Freeport, TX Liquefied Natural Gas Exports to Turkey (Million Cubic Feet) Year Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec 2015 3,145 - No Data ...

  4. Freeport, TX Liquefied Natural Gas Exports to Egypt (Million...

    Energy Information Administration (EIA) (indexed site)

    Egypt (Million Cubic Feet) Freeport, TX Liquefied Natural Gas Exports to Egypt (Million Cubic Feet) Year Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec 2015 2,947 - No Data ...

  5. Price Liquefied Freeport, TX Natural Gas Exports Price to Japan...

    Energy Information Administration (EIA) (indexed site)

    Japan (Dollars per Thousand Cubic Feet) Price Liquefied Freeport, TX Natural Gas Exports Price to Japan (Dollars per Thousand Cubic Feet) Decade Year-0 Year-1 Year-2 Year-3 Year-4...

  6. Freeport, TX Liquefied Natural Gas Exports Price to Egypt (Dollars...

    Energy Information Administration (EIA) (indexed site)

    Price to Egypt (Dollars per Thousand Cubic Feet) Freeport, TX Liquefied Natural Gas Exports Price to Egypt (Dollars per Thousand Cubic Feet) Year Jan Feb Mar Apr May Jun Jul Aug...

  7. Freeport, TX Liquefied Natural Gas Exports (Million Cubic Feet)

    Energy Information Administration (EIA) (indexed site)

    (Million Cubic Feet) Freeport, TX Liquefied Natural Gas Exports (Million Cubic Feet) Year Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec 2013 2,725 2014 2,664 2015 2,805 2,728 2,947 3,145 - = No Data Reported; -- = Not Applicable; NA = Not Available; W = Withheld to avoid disclosure of individual company data. Release Date: 10/31/2016 Next Release Date: 11/30/2016 Referring Pages: U.S.

  8. Freeport, TX Liquefied Natural Gas Exports (Million Cubic Feet)

    Energy Information Administration (EIA) (indexed site)

    (Million Cubic Feet) Freeport, TX Liquefied Natural Gas Exports (Million Cubic Feet) Year Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec 2016 2 2 3 1 2 8 11 - = No Data Reported; -- = Not Applicable; NA = Not Available; W = Withheld to avoid disclosure of individual company data. Release Date: 10/31/2016 Next Release Date: 11/30/2016 Referring Pages: U.S.

  9. Price of Freeport, TX Natural Gas LNG Imports from Other Countries...

    Gasoline and Diesel Fuel Update

    Other Countries (Nominal Dollars per Thousand Cubic Feet) Price of Freeport, TX Natural Gas LNG Imports from Other Countries (Nominal Dollars per Thousand Cubic Feet) Year Jan Feb...

  10. Freeport, TX Liquefied Natural Gas Exports Price (Dollars per Thousand

    Energy Information Administration (EIA) (indexed site)

    Cubic Feet) Price (Dollars per Thousand Cubic Feet) Freeport, TX Liquefied Natural Gas Exports Price (Dollars per Thousand Cubic Feet) Year Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec 2016 10.00 15.19 10.00 10.00 10.00 10.00 10.00 - = No Data Reported; -- = Not Applicable; NA = Not Available; W = Withheld to avoid disclosure of individual company data. Release Date: 10/31/2016 Next Release Date: 11/30/2016 Referring Pages: U.S. Pric

  11. Freeport, TX Liquefied Natural Gas Exports to Mexico (Million Cubic Feet)

    Energy Information Administration (EIA) (indexed site)

    Mexico (Million Cubic Feet) Freeport, TX Liquefied Natural Gas Exports to Mexico (Million Cubic Feet) Year Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec 2013 2,725 - = No Data Reported; -- = Not Applicable; NA = Not Available; W = Withheld to avoid disclosure of individual company data. Release Date: 10/31/2016 Next Release Date: 11/30/2016 Referring Pages: U.S. Liquefied Natural Gas Exports by Point of Exit Freeport, TX Liquefied Natural Gas Exports to Mexico

  12. Freeport, TX Liquefied Natural Gas Exports to Brazil (Million Cubic Feet)

    Energy Information Administration (EIA) (indexed site)

    Brazil (Million Cubic Feet) Freeport, TX Liquefied Natural Gas Exports to Brazil (Million Cubic Feet) Year Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec 2011 2,581 2012 2,601 2,644 2,897 2014 2,664 2015 2,805 2,728 - = No Data Reported; -- = Not Applicable; NA = Not Available; W = Withheld to avoid disclosure of individual company data. Release Date: 10/31/2016 Next Release Date: 11/30/2016 Referring Pages: U.S. Liquefied Natural Gas Exports by Point of Exit Freeport, TX Liquefied Natural Gas

  13. Freeport, TX Liquefied Natural Gas Exports to South Korea (Million Cubic

    Energy Information Administration (EIA) (indexed site)

    Feet) South Korea (Million Cubic Feet) Freeport, TX Liquefied Natural Gas Exports to South Korea (Million Cubic Feet) Year Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec 2011 3,157 3,085 - = No Data Reported; -- = Not Applicable; NA = Not Available; W = Withheld to avoid disclosure of individual company data. Release Date: 10/31/2016 Next Release Date: 11/30/2016 Referring Pages: U.S. Liquefied Natural Gas Exports by Point of Exit Freeport, TX Liquefied Natural Gas Exports to South Korea

  14. Freeport, TX Liquefied Natural Gas Imports From Peru (Million Cubic Feet)

    Energy Information Administration (EIA) (indexed site)

    From Peru (Million Cubic Feet) Freeport, TX Liquefied Natural Gas Imports From Peru (Million Cubic Feet) Year Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec 2011 3,175 3,338 3,262 - = No Data Reported; -- = Not Applicable; NA = Not Available; W = Withheld to avoid disclosure of individual company data. Release Date: 10/31/2016 Next Release Date: 11/30/2016 Referring Pages: U.S. Liquefied Natural Gas Imports by Point of Entry Freeport, TX LNG Imports from Peru

  15. Freeport, TX Liquefied Natural Gas Imports from Norway (Million Cubic Feet)

    Energy Information Administration (EIA) (indexed site)

    Norway (Million Cubic Feet) Freeport, TX Liquefied Natural Gas Imports from Norway (Million Cubic Feet) Year Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec 2013 2,709 2,918 2015 5,992 - = No Data Reported; -- = Not Applicable; NA = Not Available; W = Withheld to avoid disclosure of individual company data. Release Date: 10/31/2016 Next Release Date: 11/30/2016 Referring Pages: U.S. Liquefied Natural Gas Imports by Point of Entry Freeport, TX LNG Imports from Norway

  16. Freeport, TX Liquefied Natural Gas Imports from Yemen (Million Cubic Feet)

    Energy Information Administration (EIA) (indexed site)

    Yemen (Million Cubic Feet) Freeport, TX Liquefied Natural Gas Imports from Yemen (Million Cubic Feet) Year Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec 2011 2,869 3,108 2012 2,979 - = No Data Reported; -- = Not Applicable; NA = Not Available; W = Withheld to avoid disclosure of individual company data. Release Date: 10/31/2016 Next Release Date: 11/30/2016 Referring Pages: U.S. Liquefied Natural Gas Imports by Point of Entry Freeport, TX LNG Imports from Yemen

  17. Freeport, TX Natural Gas LNG Imports (Price) From Nigeria (Dollars per

    Energy Information Administration (EIA) (indexed site)

    Thousand Cubic Feet) Freeport, TX Natural Gas LNG Imports (Price) From Nigeria (Dollars per Thousand Cubic Feet) Freeport, TX Natural Gas LNG Imports (Price) From Nigeria (Dollars per Thousand Cubic Feet) Decade Year-0 Year-1 Year-2 Year-3 Year-4 Year-5 Year-6 Year-7 Year-8 Year-9 2000's -- -- -- 2010's 6.43 -- -- -- -- - = No Data Reported; -- = Not Applicable; NA = Not Available; W = Withheld to avoid disclosure of individual company data. Release Date: 10/31/2016 Next Release Date:

  18. Freeport, TX Natural Gas Liquefied Natural Gas Imports (Million Cubic Feet)

    Energy Information Administration (EIA) (indexed site)

    (Million Cubic Feet) Freeport, TX Natural Gas Liquefied Natural Gas Imports (Million Cubic Feet) Year Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec 2014 2,703 2,994 2015 5,992 - = No Data Reported; -- = Not Applicable; NA = Not Available; W = Withheld to avoid disclosure of individual company data. Release Date: 10/31/2016 Next Release Date: 11/30/2016 Referring Pages: U.S. Liquefied Natural Gas Imports by Point of Entry Freeport, TX LNG Imports from All Countries

  19. Freeport, TX Natural Gas Liquefied Natural Gas Imports from Egypt (Million

    Energy Information Administration (EIA) (indexed site)

    Cubic Feet) Egypt (Million Cubic Feet) Freeport, TX Natural Gas Liquefied Natural Gas Imports from Egypt (Million Cubic Feet) Year Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec 2011 2,969 - = No Data Reported; -- = Not Applicable; NA = Not Available; W = Withheld to avoid disclosure of individual company data. Release Date: 10/31/2016 Next Release Date: 11/30/2016 Referring Pages: U.S. Liquefied Natural Gas Imports by Point of Entry Freeport, TX Liquefied Natural Gas Exports to Egyp

  20. Freeport, TX Natural Gas Liquefied Natural Gas Imports from Other Countries

    Energy Information Administration (EIA) (indexed site)

    (Million Cubic Feet) Other Countries (Million Cubic Feet) Freeport, TX Natural Gas Liquefied Natural Gas Imports from Other Countries (Million Cubic Feet) Year Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec 2014 2,703 - = No Data Reported; -- = Not Applicable; NA = Not Available; W = Withheld to avoid disclosure of individual company data. Release Date: 10/31/2016 Next Release Date: 11/30/2016 Referring Pages: U.S. Liquefied Natural Gas Imports by Point of Entry Freeport, TX LNG Imports

  1. Price of Freeport, TX Natural Gas LNG Imports (Dollars per Thousand Cubic

    Energy Information Administration (EIA) (indexed site)

    Feet) Year Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec 2014 12.95 14.71 2015 15.12 - = No Data Reported; -- = Not Applicable; NA = Not Available; W = Withheld to avoid disclosure of individual company data. Release Date: 10/31/2016 Next Release Date: 11/30/2016 Referring Pages: U.S. Price of Liquefied Natural Gas Imports by Point of Entry Freeport, TX LNG Imports from

  2. Price of Freeport, TX Liquefied Natural Gas Exports Price to Turkey

    Energy Information Administration (EIA) (indexed site)

    (Dollars per Thousand Cubic Feet) Price to Turkey (Dollars per Thousand Cubic Feet) Price of Freeport, TX Liquefied Natural Gas Exports Price to Turkey (Dollars per Thousand Cubic Feet) Decade Year-0 Year-1 Year-2 Year-3 Year-4 Year-5 Year-6 Year-7 Year-8 Year-9 2010's -- 15.99 - = No Data Reported; -- = Not Applicable; NA = Not Available; W = Withheld to avoid disclosure of individual company data. Release Date: 10/31/2016 Next Release Date: 11/30/2016 Referring Pages: U.S. Price of

  3. Price of Freeport, TX Liquefied Natural Gas Exports to Egypt (Dollars per

    Energy Information Administration (EIA) (indexed site)

    Thousand Cubic Feet) Egypt (Dollars per Thousand Cubic Feet) Price of Freeport, TX Liquefied Natural Gas Exports to Egypt (Dollars per Thousand Cubic Feet) Decade Year-0 Year-1 Year-2 Year-3 Year-4 Year-5 Year-6 Year-7 Year-8 Year-9 2010's -- 16.71 - = No Data Reported; -- = Not Applicable; NA = Not Available; W = Withheld to avoid disclosure of individual company data. Release Date: 10/31/2016 Next Release Date: 11/30/2016 Referring Pages: U.S. Price of Liquefied Natural Gas Exports by

  4. Price of Freeport, TX Natural Gas LNG Imports (Dollars per Thousand Cubic

    Energy Information Administration (EIA) (indexed site)

    Feet) Decade Year-0 Year-1 Year-2 Year-3 Year-4 Year-5 Year-6 Year-7 Year-8 Year-9 2000's -- 13.83 4.51 2010's 6.96 9.27 10.53 14.85 13.88 15.12 - = No Data Reported; -- = Not Applicable; NA = Not Available; W = Withheld to avoid disclosure of individual company data. Release Date: 10/31/2016 Next Release Date: 11/30/2016 Referring Pages: U.S. Price of Liquefied Natural Gas Imports by Point of Entry Freeport, TX LNG Exports to

  5. Freeport, TX Liquefied Natural Gas Exports to India (Million Cubic Feet)

    Energy Information Administration (EIA) (indexed site)

    (Million Cubic Feet) Liquefied Natural Gas Exports to India (Million Cubic Feet) (Million Cubic Feet) Freeport, TX Liquefied Natural Gas Exports to India (Million Cubic Feet) (Million Cubic Feet) Year Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec 2011 3,120 2,873 2012 3,004 - = No Data Reported; -- = Not Applicable; NA = Not Available; W = Withheld to avoid disclosure of individual company data. Release Date: 10/31/2016 Next Release Date: 11/30/2016 Referring Pages: U.S. Liquefied Natural

  6. Freeport, TX Natural Gas Liquefied Natural Gas Imports from Trinidad and

    Energy Information Administration (EIA) (indexed site)

    Tobago (Million Cubic Feet) Trinidad and Tobago (Million Cubic Feet) Freeport, TX Natural Gas Liquefied Natural Gas Imports from Trinidad and Tobago (Million Cubic Feet) Year Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec 2011 2,706 2012 2,872 2014 2,994 - = No Data Reported; -- = Not Applicable; NA = Not Available; W = Withheld to avoid disclosure of individual company data. Release Date: 10/31/2016 Next Release Date: 11/30/2016 Referring Pages: U.S. Liquefied Natural Gas Imports by Point

  7. Freeport LNG Terminal | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    Freeport LNG Terminal Freeport LNG Terminal Freeport LNG Terminal Long-Term Contract Information and Registrations at U.S. LNG Export Facilities Filing Date Type (1) Description ...

  8. Energy Department Authorizes Freeport LNG to Export Liquefied...

    Energy Saver

    Freeport LNG to Export Liquefied Natural Gas Energy Department Authorizes Freeport LNG to Export Liquefied Natural Gas November 14, 2014 - 2:00pm Addthis News Media Contact ...

  9. Energy Department Authorizes Additional Volume at Proposed Freeport...

    Energy Saver

    Additional Volume at Proposed Freeport LNG Facility to Export Liquefied Natural Gas Energy Department Authorizes Additional Volume at Proposed Freeport LNG Facility to Export ...

  10. Price Liquefied Freeport, TX Natural Gas Exports to India (Dollars...

    Energy Information Administration (EIA) (indexed site)

    Decade Year-0 Year-1 Year-2 Year-3 Year-4 Year-5 Year-6 Year-7 Year-8 Year-9 2000's -- -- -- 2010's 7.56 8.66 11.10 -- --

  11. Freeport, TX Liquefied Natural Gas Exports to Brazil (Million...

    Annual Energy Outlook

    Decade Year-0 Year-1 Year-2 Year-3 Year-4 Year-5 Year-6 Year-7 Year-8 Year-9 2000's 0 0 0 2010's 0 2,581 8,142 0 2,664...

  12. Price of Freeport, TX Liquefied Natural Gas Exports to Brazil...

    Energy Information Administration (EIA) (indexed site)

    Year Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec 2011 12.74 2012 10.68 10.57 12.21 2014 15.51 2015 17.44 12.8

  13. Price of Freeport, TX Liquefied Natural Gas Exports to Brazil...

    Energy Information Administration (EIA) (indexed site)

    Decade Year-0 Year-1 Year-2 Year-3 Year-4 Year-5 Year-6 Year-7 Year-8 Year-9 2000's -- -- -- 2010's -- 12.74 11.19 -- 15.51 15.1

  14. Freeport, TX Liquefied Natural Gas Exports Price (Dollars per Thousand

    Energy Information Administration (EIA) (indexed site)

    Cubic Feet) Decade Year-0 Year-1 Year-2 Year-3 Year-4 Year-5 Year-6 Year-7 Year-8 Year-9 2010's 10.31 11.16 13.45 15.51 15.80

  15. Freeport, TX Liquefied Natural Gas Exports Price (Dollars per Thousand

    Energy Information Administration (EIA) (indexed site)

    Cubic Feet) Year Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec 2013 13.45 2014 15.51 2015 17.44 12.89 16.71 15.99

  16. EA-380 Freeport Commodities | Department of Energy

    Energy.gov [DOE] (indexed site)

    Freeport Commodities to export electric energy to Canada. File EA-380 Freepoint CN.docx More Documents & Publications EA-379 FreePoint Commodities EA-196-A Minnesota Power, Sales ...

  17. Energy Department Authorizes Additional Volume at Proposed Freeport LNG

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    Facility to Export Liquefied Natural Gas | Department of Energy Additional Volume at Proposed Freeport LNG Facility to Export Liquefied Natural Gas Energy Department Authorizes Additional Volume at Proposed Freeport LNG Facility to Export Liquefied Natural Gas November 15, 2013 - 3:00pm Addthis NEWS MEDIA CONTACT (202) 586-4940 WASHINGTON - The Energy Department announced today that it has conditionally authorized Freeport LNG Expansion, L.P. and FLNG Liquefaction, LLC (Freeport) to export

  18. Freeport LNG Expansion, L.P. and FLNG Liquefaction, LLC - FE...

    Energy.gov [DOE] (indexed site)

    (FLEX I Conditional Order) to Freeport LNG Expansion, L.P. and FLNG Liquefaction, LLC, ... holders, together with Freeport LNG Expansion, L.P. and FLNG Liquefaction, LLC ...

  19. ORDER NO. 3357: Freeport LNG | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    57: Freeport LNG ORDER NO. 3357: Freeport LNG ORDER CONDITIONALLY GRANTING LONG-TERM MULTI-CONTRACT AUTHORIZATION TO EXPORT LIQUEFIED NATURAL GAS BY VESSEL FROM THE FREEPORT LNG TERMINAL ON QUINTANA ISLAND, TEXAS TO NON-FREE TRADE AGREEMENT NATIONS Based on a review of the complete record and for the reasons set forth below, DOE/FE has concluded that the opponents of the FLEX Application have not demonstrated that the requested authorization will be inconsistent with the public interest and

  20. Freeport LNG Development, L.P. (Freeport LNG)- Blanket Authorization to Export Previously Imported LNG- FE Dkt. No. 15-103-LNG

    Energy.gov [DOE]

    The Office of Fossil Energy gives notice of receipt of an Application filed June 25, 2015 by Freeport LNG Development, L.P. (Freeport LNG), requesting blanket authorization to export liquefied...

  1. SEMI-ANNUAL REPORTS - FREEPORT LNG EXPANSION L.P. & FLNG LIQUEFACTION...

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    - FREEPORT LNG EXPANSION L.P. & FLNG LIQUEFACTION, LLC - FE DKT. 10-161-LNG - ORDER 3282 SEMI-ANNUAL REPORTS - FREEPORT LNG EXPANSION L.P. & FLNG LIQUEFACTION, LLC - FE DKT. ...

  2. Freeport LNG Expansion, L.P., FLNG Liquefaction, LLC, FLNG Liquefactio...

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    Freeport LNG Expansion, L.P., FLNG Liquefaction, LLC, FLNG Liquefaction 2, LLC and FLNG Liquefaction 3, LLC - 14-005-CIC Freeport LNG Expansion, L.P., FLNG Liquefaction, LLC, FLNG ...

  3. SEMI-ANNUAL REPORTS - FREEPORT LNG EXPANSION L.P. & FLNG LIQUEFACTION...

    Energy Saver

    - FREEPORT LNG EXPANSION L.P. & FLNG LIQUEFACTION, LLC - FE DKT. 10-161-LNG - ORDER 3282 SEMI-ANNUAL REPORTS - FREEPORT LNG EXPANSION L.P. & FLNG LIQUEFACTION, LLC - FE DKT....

  4. Price of Freeport, TX Natural Gas LNG Imports from Egypt (Nominal...

    Energy Information Administration (EIA) (indexed site)

    Decade Year-0 Year-1 Year-2 Year-3 Year-4 Year-5 Year-6 Year-7 Year-8 Year-9 2000's -- -- 4.24 2010's -- 12.23 -- -- --

  5. Price of Freeport, TX Liquefied Natural Gas Exports to Mexico (Dollars per

    Energy Information Administration (EIA) (indexed site)

    Thousand Cubic Feet) Year Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec 2013 13.45

  6. Price of Freeport, TX Natural Gas Exports to India (Dollars per Thousand

    Energy Information Administration (EIA) (indexed site)

    Cubic Feet) Year Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec 2011 7.82 9.57 2012 11.10

  7. Price of Freeport, TX Natural Gas LNG Imports from Egypt (Nominal Dollars

    Energy Information Administration (EIA) (indexed site)

    per Thousand Cubic Feet) Year Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec 2011 12.23

  8. Price of Freeport, TX Natural Gas LNG Imports from Other Countries (Nominal

    Energy Information Administration (EIA) (indexed site)

    Dollars per Thousand Cubic Feet) Decade Year-0 Year-1 Year-2 Year-3 Year-4 Year-5 Year-6 Year-7 Year-8 Year-9 2010's -- 12.95 --

  9. Price of Freeport, TX Natural Gas LNG Imports from Trinidad and Tobago

    Energy Information Administration (EIA) (indexed site)

    (Dollars per Thousand Cubic Feet) Decade Year-0 Year-1 Year-2 Year-3 Year-4 Year-5 Year-6 Year-7 Year-8 Year-9 2000's -- 13.83 4.77 2010's -- 10.60 9.01 -- 14.71 --

  10. Price of Freeport, TX Natural Gas LNG Imports from Trinidad and Tobago

    Energy Information Administration (EIA) (indexed site)

    (Dollars per Thousand Cubic Feet) Year Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec 2011 10.60 2012 9.01 2014 14.71

  11. Freeport, TX LNG Imports (Price) from Norway (Dollars per Thousand Cubic

    Energy Information Administration (EIA) (indexed site)

    Feet) Decade Year-0 Year-1 Year-2 Year-3 Year-4 Year-5 Year-6 Year-7 Year-8 Year-9 2010's -- 14.85 --

  12. Freeport, TX LNG Imports (Price) from Norway (Dollars per Thousand Cubic

    Energy Information Administration (EIA) (indexed site)

    Feet) Year Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec 2013 14.85 14.85 2015

  13. Freeport, TX LNG Imports (Price) from Yemen (Dollars per Thousand Cubic

    Energy Information Administration (EIA) (indexed site)

    Feet) Decade Year-0 Year-1 Year-2 Year-3 Year-4 Year-5 Year-6 Year-7 Year-8 Year-9 2000's -- -- -- 2010's -- 10.30 12.00 -- -- --

  14. Freeport, TX LNG Imports (Price) from Yemen (Dollars per Thousand Cubic

    Energy Information Administration (EIA) (indexed site)

    Feet) Year Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec 2011 9.98 10.60 2012 12.00

  15. Freeport, TX Natural Gas LNG Imports (Price) From Peru (Dollars per

    Energy Information Administration (EIA) (indexed site)

    Thousand Cubic Feet) Decade Year-0 Year-1 Year-2 Year-3 Year-4 Year-5 Year-6 Year-7 Year-8 Year-9 2000's -- -- -- 2010's 7.44 7.38 -- -- -- --

  16. Freeport, TX Natural Gas LNG Imports (Price) From Peru (Dollars per

    Energy Information Administration (EIA) (indexed site)

    Thousand Cubic Feet) Year Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec 2011 6.92 7.25 7.96

  17. EIS-0487: Freeport LNG Liquefaction Project, Brazoria County, Texas

    Energy.gov [DOE]

    Federal Energy Regulatory Commission (FERC) prepared an EIS to analyze the potential environmental impacts of a proposal to construct and operate the Freeport Liquefied Natural Gas (LNG) Liquefaction Project, which would expand an existing LNG import terminal and associated facilities in Brazoria County, Texas, to enable the terminal to liquefy and export LNG. DOE, Office of Fossil Energy – a cooperating agency in preparing the EIS – has an obligation under Section 3 of the Natural Gas Act to authorize the import and export of natural gas, including LNG, unless it finds that the import or export is not consistent with the public interest.

  18. Freeport LNG Expansion, L.P. and FLNG Liquefaction, LLC - FE Dkt. No.

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    11-161-LNG | Department of Energy Freeport LNG Expansion, L.P. and FLNG Liquefaction, LLC - FE Dkt. No. 11-161-LNG Freeport LNG Expansion, L.P. and FLNG Liquefaction, LLC - FE Dkt. No. 11-161-LNG On November 15, 2013, the Office of Fossil Energy of the Department of Energy (DOE/FE) issued Order No. 3357 (FLEX II Conditional Order) to Freeport LNG Expansion, L.P., FLNG Liquefaction, LLC, FLNG Liquefaction 2, LLC, and FLNG Liquefaction 3, LLC (collectively, FLEX) pursuant to section 3(a) of

  19. SEMI-ANNUAL REPORTS FOR FREEPORT LNG EXPANSION, L.P. & FLNG LIQUEFACTI...

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    EXPANSION, L.P. & FLNG LIQUEFACTION, LLC - FE DKT. NO. 11-161-LNG - ORDER 3357 SEMI-ANNUAL REPORTS FOR FREEPORT LNG EXPANSION, L.P. & FLNG LIQUEFACTION, LLC - FE DKT. NO. ...

  20. SEMI-ANNUAL REPORTS FOR FREEPORT LNG EXPANSION L.P. & FLNG LIQUEFACTIO...

    Energy.gov [DOE] (indexed site)

    More Documents & Publications SEMI-ANNUAL REPORTS FOR FREEPORT LNG EXPANSION, L.P. & FLNG LIQUEFACTION, LLC - FE DKT. NOs. 12-06-LNG, 10-161-LNG and 11-161-LNG (Order Nos. 3066, ...

  1. SEMI-ANNUAL REPORTS FOR FREEPORT LNG EXPANSION, L.P. & FLNG LIQUEFACTI...

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    EXPANSION, L.P. & FLNG LIQUEFACTION, LLC - FE DKT. NOs. 12-06-LNG, 10-161-LNG and 11-161-LNG (Order Nos. 3066, 3282 and 3357) SEMI-ANNUAL REPORTS FOR FREEPORT LNG EXPANSION, L.P. & ...

  2. Freeport LNG Expansion, L.P. and FLNG Liquefaction, LLC - FE...

    Energy.gov [DOE] (indexed site)

    (FLEX II Conditional Order) to Freeport LNG Expansion, L.P., FLNG Liquefaction, LLC, ... Order 3357-B - Final Opinion and Order Granting LNG Export Authorization (704.57 KB) More ...

  3. SEMI-ANNUAL REPORTS FOR FREEPORT McMoran - FE DKT. NO. 13-26...

    Energy Saver

    McMoran - FE DKT. NO. 13-26-LNG - ORDER 3290 SEMI-ANNUAL REPORTS FOR FREEPORT McMoran - FE DKT. NO. 13-26-LNG - ORDER 3290 PDF icon October 2013 PDF icon April 2014 PDF icon ...

  4. SEMI-ANNUAL REPORTS FOR FREEPORT LNG EXPANSION L.P. & FLNG LIQUEFACTIO...

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    LNG EXPANSION L.P. & FLNG LIQUEFACTION, LLC - FE DKT. 10-160-LNG - ORDER 2913 SEMI-ANNUAL REPORTS FOR FREEPORT LNG EXPANSION L.P. & FLNG LIQUEFACTION, LLC - FE DKT. 10-160-LNG - ...

  5. SEMI-ANNUAL REPORTS FOR FREEPORT LNG EXPANSION, L.P. & FLNG LIQUEFACTI...

    Energy Saver

    EXPANSION, L.P. & FLNG LIQUEFACTION, LLC - FE DKT. NO. 11-161-LNG - ORDER 3357 SEMI-ANNUAL REPORTS FOR FREEPORT LNG EXPANSION, L.P. & FLNG LIQUEFACTION, LLC - FE DKT. NO....

  6. SEMI-ANNUAL REPORTS FOR FREEPORT LNG EXPANSION L.P. & FLNG LIQUEFACTIO...

    Energy Saver

    EXPANSION L.P. & FLNG LIQUEFACTION, LLC - FE DKT. NO. 12-06-LNG - ORDER 3066 SEMI-ANNUAL REPORTS FOR FREEPORT LNG EXPANSION L.P. & FLNG LIQUEFACTION, LLC - FE DKT. NO. 12-06-LNG -...

  7. EIS-0412: TX Energy, LLC, Industrial Gasification Facility Near...

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    2: TX Energy, LLC, Industrial Gasification Facility Near Beaumont, TX EIS-0412: TX Energy, LLC, Industrial Gasification Facility Near Beaumont, TX February 18, 2009 EIS-0412: ...

  8. US WSC TX Site Consumption

    Energy Information Administration (EIA) (indexed site)

    WSC TX Site Consumption million Btu $0 $500 $1,000 $1,500 $2,000 $2,500 US WSC TX Expenditures dollars ALL ENERGY average per household (excl. transportation) 0 4,000 8,000 12,000 16,000 US WSC TX Site Consumption kilowatthours $0 $500 $1,000 $1,500 $2,000 US WSC TX Expenditures dollars ELECTRICITY ONLY average per household * Texas households consume an average of 77 million Btu per year, about 14% less than the U.S. average. * Average electricity consumption per Texas home is 26% higher than

  9. SEMI-ANNUAL REPORTS FOR FREEPORT LNG EXPANSION L.P. & FLNG LIQUEFACTION,

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    LLC - FE DKT. NO. 12-06-LNG - ORDER 3066 | Department of Energy EXPANSION L.P. & FLNG LIQUEFACTION, LLC - FE DKT. NO. 12-06-LNG - ORDER 3066 SEMI-ANNUAL REPORTS FOR FREEPORT LNG EXPANSION L.P. & FLNG LIQUEFACTION, LLC - FE DKT. NO. 12-06-LNG - ORDER 3066 April 2013 (1.3 MB) April 2014 (229.51 KB) October 2014 (46.03 KB) April 2015 (2.19 MB) October 2015 (2.31 MB) More Documents & Publications SEMI-ANNUAL REPORTS FOR FREEPORT LNG EXPANSION, L.P. & FLNG LIQUEFACTION, LLC - FE

  10. US WSC TX Site Consumption

    Gasoline and Diesel Fuel Update

    ... Yes Yes No No 0% 20% 40% 60% 80% 100% US TX No Car CAR IS PARKED WITHIN 20 FT OF ELECTRICAL OUTLET More highlights from RECS on housing characteristics and energy-related ...

  11. Freeport LNG Expansion, L.P., FLNG Liquefaction, LLC, FLNG Liquefactio...

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    ...P., FLNG Liquefaction, LLC, FLNG Liquefaction 2, LLC and FLNG Liquefaction 3, LLC - 14-005-CIC; 10-160-LNG; 10-161-LNG, 11-161-LNG and 12-06-LNG Freeport LNG Expansion, L.P., FLNG ...

  12. CleanTX Foundation | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    is a stub. You can help OpenEI by expanding it. CleanTX Foundation is a policy organization located in Austin, Texas. References About CleanTX Foundation Retrieved from...

  13. EIS-0412: TX Energy, LLC, Industrial Gasification Facility Near Beaumont,

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    TX | Department of Energy 2: TX Energy, LLC, Industrial Gasification Facility Near Beaumont, TX EIS-0412: TX Energy, LLC, Industrial Gasification Facility Near Beaumont, TX February 18, 2009 EIS-0412: Notice of Intent to Prepare an Environmental Impact Statement Construction of the TX Energy, LLC, Industrial Gasification Facility near Beaumont, Texas

  14. EDF Industrial Power Services (TX), LLC | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    EDF Industrial Power Services (TX), LLC Jump to: navigation, search Name: EDF Industrial Power Services (TX), LLC Place: Texas Phone Number: 877-432-4530 Website:...

  15. Penitas, TX Natural Gas Pipeline Imports From Mexico (Dollars...

    Energy Information Administration (EIA) (indexed site)

    Penitas, TX Natural Gas Pipeline Imports From Mexico (Dollars per Thousand Cubic Feet) Penitas, TX Natural Gas Pipeline Imports From Mexico (Dollars per Thousand Cubic Feet) Decade ...

  16. Alamo, TX Natural Gas Pipeline Imports From Mexico (Dollars per...

    Energy Information Administration (EIA) (indexed site)

    Alamo, TX Natural Gas Pipeline Imports From Mexico (Dollars per Thousand Cubic Feet) Alamo, TX Natural Gas Pipeline Imports From Mexico (Dollars per Thousand Cubic Feet) Decade ...

  17. SEMI-ANNUAL REPORTS FOR FREEPORT LNG EXPANSION, L.P. & FLNG LIQUEFACTION,

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    LLC - FE DKT. NOs. 12-06-LNG, 10-161-LNG and 11-161-LNG (Order Nos. 3066, 3282 and 3357) | Department of Energy EXPANSION, L.P. & FLNG LIQUEFACTION, LLC - FE DKT. NOs. 12-06-LNG, 10-161-LNG and 11-161-LNG (Order Nos. 3066, 3282 and 3357) SEMI-ANNUAL REPORTS FOR FREEPORT LNG EXPANSION, L.P. & FLNG LIQUEFACTION, LLC - FE DKT. NOs. 12-06-LNG, 10-161-LNG and 11-161-LNG (Order Nos. 3066, 3282 and 3357) April 2014 (229.51 KB) October 2014 (46.03 KB) April 2015 (2.19 MB) October 2015 (2.31

  18. TX-100 manufacturing final project report.

    SciTech Connect

    Ashwill, Thomas D.; Berry, Derek S.

    2007-11-01

    This report details the work completed under the TX-100 blade manufacturing portion of the Carbon-Hybrid Blade Developments: Standard and Twist-Coupled Prototype project. The TX-100 blade is a 9 meter prototype blade designed with bend-twist coupling to augment the mitigation of peak loads during normal turbine operation. This structural coupling was achieved by locating off axis carbon fiber in the outboard portion of the blade skins. The report will present the tooling selection, blade production, blade instrumentation, blade shipping and adapter plate design and fabrication. The baseline blade used for this project was the ERS-100 (Revision D) wind turbine blade. The molds used for the production of the TX-100 were originally built for the production of the CX-100 blade. The same high pressure and low pressure skin molds were used to manufacture the TX-100 skins. In order to compensate for the difference in skin thickness between the CX-100 and the TX-100, however, a new TX-100 shear web plug and mold were required. Both the blade assembly fixture and the root stud insertion fixture used for the CX-100 blades could be utilized for the TX-100 blades. A production run of seven TX-100 prototype blades was undertaken at TPI Composites during the month of October, 2004. Of those seven blades, four were instrumented with strain gauges before final assembly. After production at the TPI Composites facility in Rhode Island, the blades were shipped to various test sites: two blades to the National Wind Technology Center at the National Renewable Energy Laboratory in Boulder, Colorado, two blades to Sandia National Laboratory in Albuquerque, New Mexico and three blades to the United States Department of Agriculture turbine field test facility in Bushland, Texas. An adapter plate was designed to allow the TX-100 blades to be installed on existing Micon 65/13M turbines at the USDA site. The conclusion of this program is the kick-off of the TX-100 blade testing at the three

  19. Rio Grande, TX Natural Gas Pipeline Exports to Mexico (Million...

    Energy Information Administration (EIA) (indexed site)

    Grande, TX Natural Gas Pipeline Exports to Mexico (Million Cubic Feet) Rio Grande, TX ... 05312016 Referring Pages: U.S. Natural Gas Pipeline Exports by Point of Exit Rio Grande

  20. Roma, TX Natural Gas Pipeline Exports to Mexico (Million Cubic...

    Energy Information Administration (EIA) (indexed site)

    Roma, TX Natural Gas Pipeline Exports to Mexico (Million Cubic Feet) Roma, TX Natural Gas Pipeline Exports to Mexico (Million Cubic Feet) Year Jan Feb Mar Apr May Jun Jul Aug Sep ...

  1. Passive seismic tomography application for cave monitoring in DOZ underground mine PT. Freeport Indonesia

    SciTech Connect

    Nurhandoko, Bagus Endar B.; Wely, Woen; Setiadi, Herlan; Riyanto, Erwin

    2015-04-16

    It is already known that tomography has a great impact for analyzing and mapping unknown objects based on inversion, travel time as well as waveform inversion. Therefore, tomography has used in wide area, not only in medical but also in petroleum as well as mining. Recently, tomography method is being applied in several mining industries. A case study of tomography imaging has been carried out in DOZ ( Deep Ore Zone ) block caving mine, Tembagapura, Papua. Many researchers are undergoing to investigate the properties of DOZ cave not only outside but also inside which is unknown. Tomography takes a part for determining this objective.The sources are natural from the seismic events that caused by mining induced seismicity and rocks deformation activity, therefore it is called as passive seismic. These microseismic travel time data are processed by Simultaneous Iterative Reconstruction Technique (SIRT). The result of the inversion can be used for DOZ cave monitoring. These information must be used for identifying weak zone inside the cave. In addition, these results of tomography can be used to determine DOZ and cave information to support mine activity in PT. Freeport Indonesia.

  2. RAPID/Roadmap/6-TX-b | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    Permitting Information Desktop Toolkit BETA About Bulk Transmission Geothermal Hydropower Solar Tools Contribute Contact Us Construction Storm Water Permit (6-TX-b) The Texas...

  3. RAPID/Roadmap/19-TX-a | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    Toolkit BETA About Bulk Transmission Geothermal Hydropower Solar Tools Contribute Contact Us Water Access and Water Rights Overview (19-TX-a) In the late 1960's Texas...

  4. RAPID/Roadmap/14-TX-d | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    Toolkit BETA About Bulk Transmission Geothermal Hydropower Solar Tools Contribute Contact Us 401 Water Quality Certification (14-TX-d) Section 401 of the Clean Water Act (CWA)...

  5. RAPID/Roadmap/11-TX-b | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    Toolkit BETA About Bulk Transmission Geothermal Hydropower Solar Tools Contribute Contact Us Human Remains Process (11-TX-b) This flowchart illustrates the procedure a...

  6. RAPID/Roadmap/11-TX-c | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    11-TX-c.2 - Does the Project Area Contain a Recorded Archaeological Site? However, oil, gas, or other mineral exploration, production, processing, marketing, refining, or...

  7. RAPID/Roadmap/11-TX-a | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    thumbnail: Page number not in range. Flowchart Narrative 11-TX-a.1 - Have Potential Human Remains Been Discovered? If the developer discovers potential human remains during any...

  8. RAPID/Roadmap/15-TX-a | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    BETA About Bulk Transmission Geothermal Hydropower Solar Tools Contribute Contact Us Air Quality Permit - Permit to Construct (15-TX-a) This flowchart illustrates the general...

  9. RAPID/Roadmap/3-TX-i | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    construction plans on the leased asset; Permission for the representatives of TxDOT to enter the area for inspection, maintenance, or reconstruction of highway facilities as...

  10. RAPID/Roadmap/6-TX-a | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    must obtain the proper oversizeoverweight permit from the Texas Department of Motor Vehicles (TxDMV). 06TXAExtraLegalVehiclePermittingProcess.pdf Error creating...

  11. U.S. Natural Gas Exports to Mexico

    Gasoline and Diesel Fuel Update

    MT Total to Chile Sabine Pass, LA Total to China Kenai, AK Sabine Pass, LA Total to India Freeport, TX Sabine Pass, LA Total to Japan Cameron, LA Freeport, TX Kenai, AK Port...

  12. U.S. LNG Imports from Canada

    Gasoline and Diesel Fuel Update

    MT Total to Chile Sabine Pass, LA Total to China Kenai, AK Sabine Pass, LA Total to India Freeport, TX Sabine Pass, LA Total to Japan Cameron, LA Freeport, TX Kenai, AK Port...

  13. Strategic Petroleum Reserve | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    Strategic Petroleum Reserve Strategic Petroleum Reserve Crude oil pipes at SPR Bryan Mound site near Freeport, TX. Crude oil pipes at SPR Bryan Mound site near Freeport, TX. The ...

  14. Strategic Petroleum Reserve | Department of Energy

    Energy.gov [DOE] (indexed site)

    Crude oil pipes at SPR Bryan Mound site near Freeport, TX. Crude oil pipes at SPR Bryan Mound site near Freeport, TX. The Strategic Petroleum Reserve (SPR) is the world's largest...

  15. Freeport LNG Expansion, L.P., FLNG Liquefaction, LLC, FLNG Liquefaction 2, LLC and FLNG Liquefaction 3, LLC- 14-005-CIC; 10-160-LNG; 10-161-LNG, 11-161-LNG and 12-06-LNG

    Energy.gov [DOE]

    Application of Freeport LNG Expansion, L.P., FLNG Liquefaction, LLC, FLNG Liquefaction 2, LLC and FLNG Liquefaction 3, LLC to Transfer Control of Long-term Authorization to Export LNG to Free Trade...

  16. Hanford Single Shell Tank Leak Causes and Locations - 241-TX Farm

    SciTech Connect

    Girardot, C. L.; Harlow, D> G.

    2014-07-22

    This document identifies 241-TX Tank Farm (TX Farm) leak causes and locations for the 100 series leaking tanks (241-TX-107 and 241-TX-114) identified in RPP-RPT-50870, Rev. 0, Hanford 241-TX Farm Leak Inventory Assessment Report. This document satisfies the TX Farm portion of the target (T04) in the Hanford Federal Facility Agreement and Consent Order milestone M-045-91F.

  17. Results of the radiological survey at the ALCOA Research Laboratory, 600 Freeport Road, New Kensington, Pennsylvania (ANK001)

    SciTech Connect

    Foley, R.D.; Brown, K.S.

    1992-10-01

    At the request of the US Department of Energy (DOE), a team from Oak Ridge National Laboratory conducted a radiological survey at the ALCOA Research Laboratory, 600 Freeport Road, New Kensington, Pennsylvania. The survey was performed on November 12, 1991. The purpose of the survey was to determine whether the property was contaminated with radioactive residues, principally [sup 238]U, as a result of work done for the Manhattan Engineer District in 1944. The survey included measurement of direct alpha and beta-gamma levels in the northeast comer of the basement of Building 29, and the collection of a debris sample from a floor drain for radionuclide analysis. The survey area was used for experimental canning of uranium slugs prior to production activities at the former New Kensington Works nearby.

  18. TxDOT Access Management Manual | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    Access Management Manual Jump to: navigation, search OpenEI Reference LibraryAdd to library Legal Document- OtherOther: TxDOT Access Management ManualLegal Abstract Manual prepared...

  19. RAPID/Roadmap/12-TX-a | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    Contribute Contact Us State Biological Resource Considerations (12-TX-a) In Texas, no person may capture, trap, take, or kill, or attempt to capture, trap, take, or kill,...

  20. RAPID/Roadmap/19-TX-b | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    19-TX-b.6 - Does the Developer Own the Overlying Land? In Texas, the right to acquire and pump ground water is tied to the ownership of the land overlying the groundwater aquifer....

  1. Alamo, TX Natural Gas Pipeline Exports to Mexico (Million Cubic...

    Gasoline and Diesel Fuel Update

    individual company data. Release Date: 09302015 Next Release Date: 10302015 Referring Pages: U.S. Natural Gas Pipeline Exports by Point of Exit Alamo, TX Natural Gas Exports to...

  2. Alamo, TX Natural Gas Pipeline Imports From Mexico (Million Cubic...

    Annual Energy Outlook

    Million Cubic Feet) Alamo, TX Natural Gas Pipeline Imports From Mexico (Million Cubic Feet) Decade Year-0 Year-1 Year-2 Year-3 Year-4 Year-5 Year-6 Year-7 Year-8 Year-9 1990's NA...

  3. Alamo, TX Natural Gas Pipeline Exports to Mexico (Million Cubic...

    Gasoline and Diesel Fuel Update

    data. Release Date: 09302015 Next Release Date: 10302015 Referring Pages: U.S. Natural Gas Pipeline Exports by Point of Exit Alamo, TX Natural Gas Imports by Pipeline from...

  4. RAPID/Roadmap/19-TX-e | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    will not interfere with other water rights. 19-TX-e Temporary Surface Water Permit.pdf Error creating thumbnail: Page number not in range. Error creating thumbnail: Page number...

  5. RAPID/Roadmap/3-TX-e | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    the leasing process. 03-TX-e - Lease of Texas Parks & Wildlife Department Land (1).pdf Error creating thumbnail: Page number not in range. Error creating thumbnail: Page number...

  6. Hidalgo, TX Natural Gas Pipeline Exports to Mexico (Million Cubic...

    Energy Information Administration (EIA) (indexed site)

    Million Cubic Feet) Hidalgo, TX Natural Gas Pipeline Exports to Mexico (Million Cubic Feet) Year Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec 2012 392 1,937 10 168 2013 529 130 ...

  7. Rio Bravo, TX Natural Gas Pipeline Exports to Mexico (Million...

    Energy Information Administration (EIA) (indexed site)

    to Mexico (Million Cubic Feet) Rio Bravo, TX Natural Gas Pipeline Exports to Mexico (Million Cubic Feet) Year Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec 2011 6,264 5,596 5,084 ...

  8. Penitas, TX Natural Gas Pipeline Exports to Mexico (Million Cubic...

    Energy Information Administration (EIA) (indexed site)

    Million Cubic Feet) Penitas, TX Natural Gas Pipeline Exports to Mexico (Million Cubic Feet) Year Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec 2011 252 1,324 824 1,017 871 770 ...

  9. Galvan Ranch, TX Natural Gas Pipeline Imports From Mexico (Million...

    Energy Information Administration (EIA) (indexed site)

    Million Cubic Feet) Galvan Ranch, TX Natural Gas Pipeline Imports From Mexico (Million Cubic Feet) Year Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec 2011 12 40 77 59 55 47 43 41 ...

  10. El Paso, TX Natural Gas Pipeline Imports From Mexico (Million...

    Energy Information Administration (EIA) (indexed site)

    Million Cubic Feet) El Paso, TX Natural Gas Pipeline Imports From Mexico (Million Cubic Feet) Decade Year-0 Year-1 Year-2 Year-3 Year-4 Year-5 Year-6 Year-7 Year-8 Year-9 1990's ...

  11. ARM - Field Campaign - TX-2002 AIRS Validation Campaign

    U.S. Department of Energy (DOE) - all webpages (Extended Search)

    govCampaignsTX-2002 AIRS Validation Campaign Comments? We would love to hear from you! Send us a note below or call us at 1-888-ARM-DATA. Send Campaign : TX-2002 AIRS Validation Campaign 2002.11.18 - 2002.12.13 Lead Scientist : Robert Knuteson Abstract NASA is conducting an aircraft campaign for the validation of the AIRS and MODIS instruments on the EOS Aqua platform. The NASA high altitude ER-2 aircraft will be based in San Antonio, Texas. The ARM SGP central facility is one of the ground

  12. Shrimp and redfish studies, bryan mound brine disposal site off Freeport, Texas, 1979-1981. Volume IV. Interview sampling survey of shrimp catch and effort. Technical memo

    SciTech Connect

    Johnson, M.F.

    1981-06-01

    An interview sampling survey of shrimp catch and fishing effort was conducted at specified ports along the Texas coast to strengthen the information base required to determine the effect of the disposal of brine from the Bryan Mound salt dome off Freeport, Texas on commercial brown shrimp (Penaeus aztecus) and white shrimp (Penaeus setiferus) populations in the Gulf of Mexico. The data recorded included port number, vessel name, official vessel number, shrimp dealer number, date of landing, area fished, depth of capture, days fished, and pounds of shrimp caught by species and size categories.

  13. Price of San Elizario, TX Natural Gas Pipeline Exports to Mexico...

    Gasoline and Diesel Fuel Update

    Price of San Elizario, TX Natural Gas Pipeline Exports to Mexico (Dollars per Thousand Cubic Feet) Price of San Elizario, TX Natural Gas Pipeline Exports to Mexico (Dollars per...

  14. McAllen, TX Natural Gas Pipeline Imports From Mexico (Dollars...

    Energy Information Administration (EIA) (indexed site)

    McAllen, TX Natural Gas Pipeline Imports From Mexico (Dollars per Thousand Cubic Feet) McAllen, TX Natural Gas Pipeline Imports From Mexico (Dollars per Thousand Cubic Feet) Decade ...

  15. File:03-TX-e - Lease of Texas Parks & Wildlife Department Land...

    OpenEI (Open Energy Information) [EERE & EIA]

    3-TX-e - Lease of Texas Parks & Wildlife Department Land (1).pdf Jump to: navigation, search File File history File usage Metadata File:03-TX-e - Lease of Texas Parks & Wildlife...

  16. File:03-TX-g - Lease of Relinquishment Act Lands.pdf | Open Energy...

    OpenEI (Open Energy Information) [EERE & EIA]

    TX-g - Lease of Relinquishment Act Lands.pdf Jump to: navigation, search File File history File usage Metadata File:03-TX-g - Lease of Relinquishment Act Lands.pdf Size of this...

  17. File:03-TX-f - Lease of Land Trade Lands.pdf | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    TX-f - Lease of Land Trade Lands.pdf Jump to: navigation, search File File history File usage Metadata File:03-TX-f - Lease of Land Trade Lands.pdf Size of this preview: 463 599...

  18. Clint, TX Natural Gas Pipeline Exports to Mexico (Million Cubic...

    Energy Information Administration (EIA) (indexed site)

    Million Cubic Feet) Clint, TX Natural Gas Pipeline Exports to Mexico (Million Cubic Feet) Year Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec 2011 8,088 6,402 7,296 6,783 8,836 ...

  19. Molecular size and structure in pyridine extracts of upper Freeport coal as separated by M41S sieving.

    SciTech Connect

    Ahrens, M.; Hunt, J. E.; Winans, R. E.; Xu, L.

    1999-07-02

    The determination of the structure of coal has long been of interest due to its crucial importance in research on reactivity and processing. However, the chemically and physically heterogeneous nature of coals makes determination of the chemical nature of even the building blocks complicated, since the molecular structure and molecular weight distribution are not dependent on a single molecule or repeat unit as in technical polymers or biopolymers, but on a complex mixture of molecules and potential connections between them which may vary among coals. Coal extracts have long been used to obtain coal material in solution form that can readily be characterized. However, what part of the total coal structure these extracts represent is not completely known. Pyridine has been a particularly good solvent for coal; for example, the extractability of Upper Freeport has been shown to be as high 30%. Although pyridine extracts of coal have been referred to as solutions, there is good evidence that they are not truly solvated, but are dispersions which are polydisperse in particle size. The particle sizes may span the size range from clusters of small molecules (a few {angstrom}) to extended clusters of large particles (a few hundred {angstrom}), not unlike micelles, where the functional groups of molecules which interact favorably with the pyridine solvent lie at the surface of particles. Mesoporous silicates are attractive candidates for separations due to their high surface areas and porous nature. MCM-41 is one member of a new family of highly uniform mesoporous silicate materials introduced by Mobil, whose pore size can be accurately controlled in the range 1.5{angstrom}-10 nm. This recently discovered M41S class of zeolites should be useful to effect size separation, due to their large pore sizes and thus their potential for the separation of larger compounds or clusters. True molecular sieving on the size range of molecular and cluster types found in coal solutions

  20. Rotary mode core sampling approved checklist: 241-TX-113

    SciTech Connect

    Fowler, K.D.

    1998-08-03

    The safety assessment for rotary mode core sampling was developed using certain bounding assumptions, however, those assumptions were not verified for each of the existing or potential flammable gas tanks. Therefore, a Flammable Gas/Rotary Mode Core Sampling Approved Checklist has been completed for tank 241-TX-113 prior to sampling operations. This transmittal documents the dispositions of the checklist items from the safety assessment.

  1. Rotary mode core sampling approved checklist: 241-TX-116

    SciTech Connect

    FOWLER, K.D.

    1999-02-24

    The safety assessment for rotary mode core sampling was developed using certain bounding assumptions, however, those assumptions were not verified for each of the existing or potential flammable gas tanks. Therefore, a Flammable Gas/Rotary Mode Core Sampling Approved Checklist has been completed for tank 241-TX-116 prior to sampling operations. This transmittal documents the dispositions of the checklist items from the safety assessment.

  2. Laredo, TX Liquefied Natural Gas Exports (Million Cubic Feet)

    Energy Information Administration (EIA) (indexed site)

    (Million Cubic Feet) Laredo, TX Liquefied Natural Gas Exports (Million Cubic Feet) Year Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec 2015 1 0 2016 3 7 8 18 12 21 23 - = No Data Reported; -- = Not Applicable; NA = Not Available; W = Withheld to avoid disclosure of individual company data. Release Date: 10/31/2016 Next Release Date: 11/30/2016 Referring Pages: U.S.

  3. Results of the radiological survey at the ALCOA Research Laboratory, 600 Freeport Road, New Kensington, Pennsylvania (ANK001). Environmental Restoration and Waste Management Non-Defense Programs

    SciTech Connect

    Foley, R.D.; Brown, K.S.

    1992-10-01

    At the request of the US Department of Energy (DOE), a team from Oak Ridge National Laboratory conducted a radiological survey at the ALCOA Research Laboratory, 600 Freeport Road, New Kensington, Pennsylvania. The survey was performed on November 12, 1991. The purpose of the survey was to determine whether the property was contaminated with radioactive residues, principally {sup 238}U, as a result of work done for the Manhattan Engineer District in 1944. The survey included measurement of direct alpha and beta-gamma levels in the northeast comer of the basement of Building 29, and the collection of a debris sample from a floor drain for radionuclide analysis. The survey area was used for experimental canning of uranium slugs prior to production activities at the former New Kensington Works nearby.

  4. Microsoft Word - TX-100 Final Report - SAND2007-6066.doc

    U.S. Department of Energy (DOE) - all webpages (Extended Search)

    Manager: Tom Ashwill Abstract This report details the work completed under the TX-100 blade manufacturing portion of the Carbon-Hybrid Blade Developments: Standard and...

  5. DOE Zero Energy Ready Home Case Study: M Street Homes, Houston, TX |

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    Department of Energy M Street Homes, Houston, TX DOE Zero Energy Ready Home Case Study: M Street Homes, Houston, TX DOE Zero Energy Ready Home Case Study: M Street Homes, Houston, TX Case study of a DOE Zero Energy Ready home in Houston, TX, that achieves a HERS 45 without PV or HERS 32 with 1.2 kW PV. The three-story, 4,507-ft2 custom home is powered by a unique tri-generation system that supplies all of the home's electricity, heating, and cooling on site. The tri-generator is powered by a

  6. Staubli TX-90XL robot qualification at the LLIHE.

    SciTech Connect

    Covert, Timothy Todd

    2010-10-01

    The Light Initiated High Explosive (LIHE) Facility uses a robotic arm to spray explosive material onto test items for impulse tests. In 2007, the decision was made to replace the existing PUMA 760 robot with the Staubli TX-90XL. A qualification plan was developed and implemented to verify the safe operating conditions and failure modes of the new system. The robot satisfied the safety requirements established in the qualification plan. A performance issue described in this report remains unresolved at the time of this publication. The final readiness review concluded the qualification of this robot at the LIHE facility.

  7. ,"TX, State Offshore Proved Nonproducing Reserves"

    Energy Information Administration (EIA) (indexed site)

    Proved Nonproducing Reserves" ,"Click worksheet name or tab at bottom for data" ,"Worksheet Name","Description","# Of Series","Frequency","Latest Data for" ,"Data 1","TX, State Offshore Proved Nonproducing Reserves",5,"Annual",2014,"6/30/1996" ,"Release Date:","11/19/2015" ,"Next Release Date:","12/31/2016" ,"Excel File

  8. Workbook Contents

    Energy Information Administration (EIA) (indexed site)

    ... (MMcf)","U.S. Liquefied Natural Gas Imports From Yemen (MMcf)","Everett, MA Liquefied Natural Gas Imports From Yemen (Million Cubic Feet)","Freeport, TX Liquefied Natural ...

  9. CX-100 and TX-100 blade field tests.

    SciTech Connect

    Holman, Adam (USDA-Agriculture Research Service, Bushland, TX); Jones, Perry L.; Zayas, Jose R.

    2005-12-01

    In support of the DOE Low Wind Speed Turbine (LWST) program two of the three Micon 65/13M wind turbines at the USDA Agricultural Research Service (ARS) center in Bushland, Texas will be used to test two sets of experimental blades, the CX-100 and TX-100. The blade aerodynamic and structural characterization, meteorological inflow and wind turbine structural response will be monitored with an array of 75 instruments: 33 to characterize the blades, 15 to characterize the inflow, and 27 to characterize the time-varying state of the turbine. For both tests, data will be sampled at a rate of 30 Hz using the ATLAS II (Accurate GPS Time-Linked Data Acquisition System) data acquisition system. The system features a time-synchronized continuous data stream and telemetered data from the turbine rotor. This paper documents the instruments and infrastructure that have been developed to monitor these blades, turbines and inflow.

  10. File:USDA-CE-Production-GIFmaps-TX.pdf | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    TX.pdf Jump to: navigation, search File File history File usage Texas Ethanol Plant Locations Size of this preview: 776 600 pixels. Full resolution (1,650 1,275 pixels,...

  11. TxDOT - Right of Way Forms webpage | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    Right of Way Forms webpage Jump to: navigation, search OpenEI Reference LibraryAdd to library Web Site: TxDOT - Right of Way Forms webpage Abstract This webpage provides the...

  12. Del Rio, TX Natural Gas Pipeline Exports to Mexico (Million Cubic...

    Energy Information Administration (EIA) (indexed site)

    Million Cubic Feet) Del Rio, TX Natural Gas Pipeline Exports to Mexico (Million Cubic Feet) Year Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec 2011 28 26 28 23 14 18 24 25 25 24 ...

  13. ORNL measurements at Hanford Waste Tank TX-118

    SciTech Connect

    Koehler, P.E.; Mihalczo, J.T.

    1995-02-01

    A program of measurements and calculations to develop a method of measuring the fissionable material content of the large waste storage tanks at the Hanford, Washington, site is described in this report. These tanks contain radioactive waste from the processing of irradiated fuel elements from the plutonium-producing nuclear reactors at the Hanford site. Time correlation and noise analysis techniques, similar to those developed for and used in the Nuclear Weapons Identification System at the Y-12 Plant in Oak Ridge, Tennessee, will be used at the Hanford site. Both ``passive`` techniques to detect the neutrons emitted spontaneously from the waste in the tank and ``active`` techniques using AmBe and {sup 252}Cf neutron sources to induce fissions will be used. This work is divided into three major tasks: (1) development of high-sensitivity neutron detectors that can selectively count only neutrons in the high {gamma} radiation fields in the tanks, (2) Monte Carlo neutron transport calculations using both the KENO and MCNP codes to plan and analyze the measurements, and (3) the measurement of time-correlated neutrons by time and frequency analysis to distinguish spontaneous fission from sources inside the tanks. This report describes the development of the detector and its testing in radiation fields at the Radiation Calibration Facility at Oak Ridge National Laboratory and in tank TX-118 at the 200 W area at Westinghouse Hanford Company.

  14. RCRA Assessment Plan for Single-Shell Tank Waste Management Area TX-TY

    SciTech Connect

    Horton, Duane G.

    2007-03-26

    WMA TX-TY contains underground, single-shell tanks that were used to store liquid waste that contained chemicals and radionuclides. Most of the liquid has been removed, and the remaining waste is regulated under the RCRA as modified in 40 CFR Part 265, Subpart F and Washington States Hazardous Waste Management Act . WMA TX-TY was placed in assessment monitoring in 1993 because of elevated specific conductance. A groundwater quality assessment plan was written in 1993 describing the monitoring activities to be used in deciding whether WMA TX-TY had affected groundwater. That plan was updated in 2001 for continued RCRA groundwater quality assessment as required by 40 CFR 265.93 (d)(7). This document further updates the assessment plan for WMA TX-TY by including (1) information obtained from ten new wells installed at the WMA after 1999 and (2) information from routine quarterly groundwater monitoring during the last five years. Also, this plan describes activities for continuing the groundwater assessment at WMA TX TY.

  15. Hanford Tank Farms Vadose Zone, Addendum to the TX Tank Farm Report

    SciTech Connect

    Spatz, R.

    2000-08-01

    This addendum to the TX Tank Farm Report (GJO-97-13-TAR, GJO-HAN-11) published in September 1997 incorporates the results of high-rate and repeat logging activities along with shape factor analysis of the logging data. A high-rate logging system was developed and deployed in the TX Tank Farm to measure cesium-137 concentration levels in high gamma flux zones where the spectral gamma logging system was unable to collect usable data because of high dead times and detector saturation. This report presents additional data and revised visualizations of subsurface contaminant distribution in the TX Tank Farm at the DOE Hanford Site in the state of Washington.

  16. ,"Del Rio, TX Natural Gas Pipeline Exports to Mexico (Million Cubic Feet)"

    Energy Information Administration (EIA) (indexed site)

    Del Rio, TX Natural Gas Pipeline Exports to Mexico (Million Cubic Feet)" ,"Click worksheet name or tab at bottom for data" ,"Worksheet Name","Description","# Of Series","Frequency","Latest Data for" ,"Data 1","Del Rio, TX Natural Gas Pipeline Exports to Mexico (Million Cubic Feet)",1,"Annual",2015 ,"Release Date:","10/31/2016" ,"Next Release Date:","11/30/2016"

  17. ,"Eagle Pass, TX Natural Gas Pipeline Exports to Mexico (MMcf)"

    Energy Information Administration (EIA) (indexed site)

    Eagle Pass, TX Natural Gas Pipeline Exports to Mexico (MMcf)" ,"Click worksheet name or tab at bottom for data" ,"Worksheet Name","Description","# Of Series","Frequency","Latest Data for" ,"Data 1","Eagle Pass, TX Natural Gas Pipeline Exports to Mexico (MMcf)",1,"Annual",2015 ,"Release Date:","10/31/2016" ,"Next Release Date:","11/30/2016" ,"Excel File

  18. ,"Galvan Ranch, TX Natural Gas Pipeline Imports From Mexico (Million Cubic Feet)"

    Energy Information Administration (EIA) (indexed site)

    Galvan Ranch, TX Natural Gas Pipeline Imports From Mexico (Million Cubic Feet)" ,"Click worksheet name or tab at bottom for data" ,"Worksheet Name","Description","# Of Series","Frequency","Latest Data for" ,"Data 1","Galvan Ranch, TX Natural Gas Pipeline Imports From Mexico (Million Cubic Feet)",1,"Annual",2015 ,"Release Date:","10/31/2016" ,"Next Release

  19. ,"Rio Bravo, TX Natural Gas Pipeline Exports to Mexico (Million Cubic Feet)"

    Energy Information Administration (EIA) (indexed site)

    Bravo, TX Natural Gas Pipeline Exports to Mexico (Million Cubic Feet)" ,"Click worksheet name or tab at bottom for data" ,"Worksheet Name","Description","# Of Series","Frequency","Latest Data for" ,"Data 1","Rio Bravo, TX Natural Gas Pipeline Exports to Mexico (Million Cubic Feet)",1,"Annual",2015 ,"Release Date:","10/31/2016" ,"Next Release Date:","11/30/2016"

  20. ,"Rio Grande, TX Natural Gas Pipeline Exports to Mexico (MMcf)"

    Energy Information Administration (EIA) (indexed site)

    Grande, TX Natural Gas Pipeline Exports to Mexico (MMcf)" ,"Click worksheet name or tab at bottom for data" ,"Worksheet Name","Description","# Of Series","Frequency","Latest Data for" ,"Data 1","Rio Grande, TX Natural Gas Pipeline Exports to Mexico (MMcf)",1,"Annual",2015 ,"Release Date:","10/31/2016" ,"Next Release Date:","11/30/2016" ,"Excel File

  1. ,"Roma, TX Natural Gas Pipeline Exports to Mexico (Million Cubic Feet)"

    Energy Information Administration (EIA) (indexed site)

    Roma, TX Natural Gas Pipeline Exports to Mexico (Million Cubic Feet)" ,"Click worksheet name or tab at bottom for data" ,"Worksheet Name","Description","# Of Series","Frequency","Latest Data for" ,"Data 1","Roma, TX Natural Gas Pipeline Exports to Mexico (Million Cubic Feet)",1,"Annual",2015 ,"Release Date:","10/31/2016" ,"Next Release Date:","11/30/2016"

  2. Golden Pass, TX Natural Gas Liquefied Natural Gas Imports (price) (Dollars

    Energy Information Administration (EIA) (indexed site)

    per Thousand Cubic Feet) Golden Pass, TX Natural Gas Liquefied Natural Gas Imports (price) (Dollars per Thousand Cubic Feet) Golden Pass, TX Natural Gas Liquefied Natural Gas Imports (price) (Dollars per Thousand Cubic Feet) Decade Year-0 Year-1 Year-2 Year-3 Year-4 Year-5 Year-6 Year-7 Year-8 Year-9 2000's -- -- -- 2010's 7.90 5.36 -- -- -- -- - = No Data Reported; -- = Not Applicable; NA = Not Available; W = Withheld to avoid disclosure of individual company data. Release Date: 10/31/2016

  3. DOE Zero Energy Ready Home Case Study: Sterling Brook Custom Homes, Double Oak, TX

    Energy.gov [DOE]

    Case study of a DOE Zero Energy Ready home in Double Oak, TX, north of Dallas, that scored a HERS 44 without PV. The 3,752-ft2 two-story home served as an energy-efficient model home for the custom...

  4. McAllen, TX Natural Gas Pipeline Exports to Mexico (Million Cubic...

    Energy Information Administration (EIA) (indexed site)

    Million Cubic Feet) McAllen, TX Natural Gas Pipeline Exports to Mexico (Million Cubic Feet) Year Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec 2011 4,414 4,236 5,595 6,174 4,938 ...

  5. General Atomics (GA) | Princeton Plasma Physics Lab

    U.S. Department of Energy (DOE) - all webpages (Extended Search)

    General Atomics (GA) Subscribe to RSS - General Atomics (GA) General Atomics Image: General Atomics (GA) The Scorpion's Strategy: "Catch and Subdue" Read more about The Scorpion's...

  6. Penitas, TX Natural Gas Pipeline Imports From Mexico (Million Cubic Feet)

    Energy Information Administration (EIA) (indexed site)

    Million Cubic Feet) Penitas, TX Natural Gas Pipeline Imports From Mexico (Million Cubic Feet) Decade Year-0 Year-1 Year-2 Year-3 Year-4 Year-5 Year-6 Year-7 Year-8 Year-9 1990's 253 40 NA 2000's NA NA NA - = No Data Reported; -- = Not Applicable; NA = Not Available; W = Withheld to avoid disclosure of individual company data. Release Date: 10/31/2016 Next Release Date: 11/30/2016 Referring Pages: U.S.

  7. Roma, TX Natural Gas Pipeline Imports From Mexico (Million Cubic Feet)

    Energy Information Administration (EIA) (indexed site)

    Natural Gas Pipeline Imports From Mexico (Million Cubic Feet) Roma, TX Natural Gas Pipeline Imports From Mexico (Million Cubic Feet) Year Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec 2016 1 2 - = No Data Reported; -- = Not Applicable; NA = Not Available; W = Withheld to avoid disclosure of individual company data. Release Date: 10/31/2016 Next Release Date: 11/30/2016 Referring Pages: U.S.

  8. Laredo, TX Liquefied Natural Gas Exports Price (Dollars per Thousand Cubic

    Energy Information Administration (EIA) (indexed site)

    Feet) Price (Dollars per Thousand Cubic Feet) Laredo, TX Liquefied Natural Gas Exports Price (Dollars per Thousand Cubic Feet) Year Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec 2015 17 17 2016 10 8 8 10 10 10 10 - = No Data Reported; -- = Not Applicable; NA = Not Available; W = Withheld to avoid disclosure of individual company data. Release Date: 10/31/2016 Next Release Date: 11/30/2016 Referring Pages: U.S. Price of

  9. Texas A&M University College Station, TX 77843-3366

    U.S. Department of Energy (DOE) - all webpages (Extended Search)

    MS #3366 Texas A&M University College Station, TX 77843-3366 Ph: 979-845-1411 Fax: 979-458-3213 Beam Time Request Form In order to be scheduled you must fill in and return this form by FAX (979-458-3213) or email to Henry Clark (clark@comp.tamu.edu) TO SCHEDULE CYCLOTRON TIME: Please indicate in the appropriate spaces below the number of 8 hour shifts you need, your preferred start date and the beams you intend to use. Since we cannot always schedule your preferred start date, please also

  10. McAllen, TX Natural Gas Pipeline Imports From Mexico (Million Cubic Feet)

    Energy Information Administration (EIA) (indexed site)

    Million Cubic Feet) McAllen, TX Natural Gas Pipeline Imports From Mexico (Million Cubic Feet) Decade Year-0 Year-1 Year-2 Year-3 Year-4 Year-5 Year-6 Year-7 Year-8 Year-9 1990's NA NA 2000's 1,118 NA 402 0 0 5,322 7,902 26,605 20,115 12,535 2010's 2,520 0 0 0 0 - = No Data Reported; -- = Not Applicable; NA = Not Available; W = Withheld to avoid disclosure of individual company data. Release Date: 10/31/2016 Next Release Date: 11/30/2016 Referring Pages: U.S.

  11. ,"Alamo, TX Natural Gas Pipeline Imports From Mexico (MMcf)"

    Energy Information Administration (EIA) (indexed site)

    Imports From Mexico (MMcf)" ,"Click worksheet name or tab at bottom for data" ,"Worksheet Name","Description","# Of Series","Frequency","Latest Data for" ,"Data 1","Alamo, TX Natural Gas Pipeline Imports From Mexico (MMcf)",1,"Annual",2014 ,"Release Date:","10/31/2016" ,"Next Release Date:","11/30/2016" ,"Excel File

  12. ,"El Paso, TX Natural Gas Pipeline Exports to Mexico (MMcf)"

    Energy Information Administration (EIA) (indexed site)

    Exports to Mexico (MMcf)" ,"Click worksheet name or tab at bottom for data" ,"Worksheet Name","Description","# Of Series","Frequency","Latest Data for" ,"Data 1","El Paso, TX Natural Gas Pipeline Exports to Mexico (MMcf)",1,"Annual",2015 ,"Release Date:","10/31/2016" ,"Next Release Date:","11/30/2016" ,"Excel File

  13. ,"El Paso, TX Natural Gas Pipeline Imports From Mexico (MMcf)"

    Energy Information Administration (EIA) (indexed site)

    Imports From Mexico (MMcf)" ,"Click worksheet name or tab at bottom for data" ,"Worksheet Name","Description","# Of Series","Frequency","Latest Data for" ,"Data 1","El Paso, TX Natural Gas Pipeline Imports From Mexico (MMcf)",1,"Annual",2002 ,"Release Date:","10/31/2016" ,"Next Release Date:","11/30/2016" ,"Excel File

  14. ,"Hidalgo, TX Natural Gas Pipeline Imports From Mexico (MMcf)"

    Energy Information Administration (EIA) (indexed site)

    Imports From Mexico (MMcf)" ,"Click worksheet name or tab at bottom for data" ,"Worksheet Name","Description","# Of Series","Frequency","Latest Data for" ,"Data 1","Hidalgo, TX Natural Gas Pipeline Imports From Mexico (MMcf)",1,"Annual",2014 ,"Release Date:","10/31/2016" ,"Next Release Date:","11/30/2016" ,"Excel File

  15. ,"McAllen, TX Natural Gas Pipeline Imports From Mexico (MMcf)"

    Energy Information Administration (EIA) (indexed site)

    Imports From Mexico (MMcf)" ,"Click worksheet name or tab at bottom for data" ,"Worksheet Name","Description","# Of Series","Frequency","Latest Data for" ,"Data 1","McAllen, TX Natural Gas Pipeline Imports From Mexico (MMcf)",1,"Annual",2014 ,"Release Date:","10/31/2016" ,"Next Release Date:","11/30/2016" ,"Excel File

  16. Roma, TX Natural Gas Pipeline Imports From Mexico (Dollars per Thousand

    Energy Information Administration (EIA) (indexed site)

    Cubic Feet) Natural Gas Pipeline Imports From Mexico (Dollars per Thousand Cubic Feet) Roma, TX Natural Gas Pipeline Imports From Mexico (Dollars per Thousand Cubic Feet) Year Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec 2016 2.06 2.61 - = No Data Reported; -- = Not Applicable; NA = Not Available; W = Withheld to avoid disclosure of individual company data. Release Date: 10/31/2016 Next Release Date: 11/30/2016 Referring Pages: U.S. Price of

  17. Hidalgo, TX Natural Gas Pipeline Imports From Mexico (Million Cubic Feet)

    Energy Information Administration (EIA) (indexed site)

    Million Cubic Feet) Hidalgo, TX Natural Gas Pipeline Imports From Mexico (Million Cubic Feet) Decade Year-0 Year-1 Year-2 Year-3 Year-4 Year-5 Year-6 Year-7 Year-8 Year-9 1990's 13,609 17,243 13,496 41,879 2000's 2,093 7,292 782 0 0 1,342 967 5,259 1,201 284 2010's 62 0 0 0 0 - = No Data Reported; -- = Not Applicable; NA = Not Available; W = Withheld to avoid disclosure of individual company data. Release Date: 10/31/2016 Next Release Date: 11/30/2016 Referring Pages: U.S.

  18. ,"Penitas, TX Natural Gas Pipeline Imports From Mexico (MMcf)"

    Energy Information Administration (EIA) (indexed site)

    Imports From Mexico (MMcf)" ,"Click worksheet name or tab at bottom for data" ,"Worksheet Name","Description","# Of Series","Frequency","Latest Data for" ,"Data 1","Penitas, TX Natural Gas Pipeline Imports From Mexico (MMcf)",1,"Annual",2002 ,"Release Date:","10/31/2016" ,"Next Release Date:","11/30/2016" ,"Excel File

  19. ,"TX, RRC District 1 Crude Oil plus Lease Condensate Proved Reserves"

    Energy Information Administration (EIA) (indexed site)

    Crude Oil plus Lease Condensate Proved Reserves" ,"Click worksheet name or tab at bottom for data" ,"Worksheet Name","Description","# Of Series","Frequency","Latest Data for" ,"Data 1","TX, RRC District 1 Crude Oil plus Lease Condensate Proved Reserves",10,"Annual",2014,"6/30/2009" ,"Release Date:","11/19/2015" ,"Next Release Date:","12/31/2016"

  20. ,"TX, RRC District 1 Dry Natural Gas Proved Reserves"

    Energy Information Administration (EIA) (indexed site)

    Dry Natural Gas Proved Reserves" ,"Click worksheet name or tab at bottom for data" ,"Worksheet Name","Description","# Of Series","Frequency","Latest Data for" ,"Data 1","TX, RRC District 1 Dry Natural Gas Proved Reserves",10,"Annual",2014,"6/30/1977" ,"Release Date:","11/19/2015" ,"Next Release Date:","12/31/2016" ,"Excel File

  1. ,"TX, RRC District 1 Lease Condensate Proved Reserves, Reserve Changes, and Production"

    Energy Information Administration (EIA) (indexed site)

    Lease Condensate Proved Reserves, Reserve Changes, and Production" ,"Click worksheet name or tab at bottom for data" ,"Worksheet Name","Description","# Of Series","Frequency","Latest Data for" ,"Data 1","TX, RRC District 1 Lease Condensate Proved Reserves, Reserve Changes, and Production",10,"Annual",2014,"6/30/1979" ,"Release Date:","11/19/2015" ,"Next Release

  2. ,"TX, RRC District 1 Proved Nonproducing Reserves"

    Energy Information Administration (EIA) (indexed site)

    Proved Nonproducing Reserves" ,"Click worksheet name or tab at bottom for data" ,"Worksheet Name","Description","# Of Series","Frequency","Latest Data for" ,"Data 1","TX, RRC District 1 Proved Nonproducing Reserves",5,"Annual",2014,"6/30/1996" ,"Release Date:","11/19/2015" ,"Next Release Date:","12/31/2016" ,"Excel File

  3. ,"TX, RRC District 1 Shale Gas Proved Reserves, Reserves Changes, and Production"

    Energy Information Administration (EIA) (indexed site)

    Shale Gas Proved Reserves, Reserves Changes, and Production" ,"Click worksheet name or tab at bottom for data" ,"Worksheet Name","Description","# Of Series","Frequency","Latest Data for" ,"Data 1","TX, RRC District 1 Shale Gas Proved Reserves, Reserves Changes, and Production",10,"Annual",2014,"6/30/2007" ,"Release Date:","11/19/2015" ,"Next Release

  4. ,"TX, RRC District 10 Coalbed Methane Proved Reserves, Reserves Changes, and Production"

    Energy Information Administration (EIA) (indexed site)

    Coalbed Methane Proved Reserves, Reserves Changes, and Production" ,"Click worksheet name or tab at bottom for data" ,"Worksheet Name","Description","# Of Series","Frequency","Latest Data for" ,"Data 1","TX, RRC District 10 Coalbed Methane Proved Reserves, Reserves Changes, and Production",10,"Annual",2014,"6/30/2005" ,"Release Date:","11/19/2015" ,"Next Release

  5. ,"TX, RRC District 10 Crude Oil plus Lease Condensate Proved Reserves"

    Energy Information Administration (EIA) (indexed site)

    Crude Oil plus Lease Condensate Proved Reserves" ,"Click worksheet name or tab at bottom for data" ,"Worksheet Name","Description","# Of Series","Frequency","Latest Data for" ,"Data 1","TX, RRC District 10 Crude Oil plus Lease Condensate Proved Reserves",10,"Annual",2014,"6/30/2009" ,"Release Date:","11/19/2015" ,"Next Release Date:","12/31/2016"

  6. ,"TX, RRC District 10 Dry Natural Gas Proved Reserves"

    Energy Information Administration (EIA) (indexed site)

    Dry Natural Gas Proved Reserves" ,"Click worksheet name or tab at bottom for data" ,"Worksheet Name","Description","# Of Series","Frequency","Latest Data for" ,"Data 1","TX, RRC District 10 Dry Natural Gas Proved Reserves",10,"Annual",2014,"6/30/1977" ,"Release Date:","11/19/2015" ,"Next Release Date:","12/31/2016" ,"Excel File

  7. ,"TX, RRC District 10 Lease Condensate Proved Reserves, Reserve Changes, and Production"

    Energy Information Administration (EIA) (indexed site)

    Lease Condensate Proved Reserves, Reserve Changes, and Production" ,"Click worksheet name or tab at bottom for data" ,"Worksheet Name","Description","# Of Series","Frequency","Latest Data for" ,"Data 1","TX, RRC District 10 Lease Condensate Proved Reserves, Reserve Changes, and Production",10,"Annual",2014,"6/30/1979" ,"Release Date:","11/19/2015" ,"Next Release

  8. ,"TX, RRC District 10 Proved Nonproducing Reserves"

    Energy Information Administration (EIA) (indexed site)

    Proved Nonproducing Reserves" ,"Click worksheet name or tab at bottom for data" ,"Worksheet Name","Description","# Of Series","Frequency","Latest Data for" ,"Data 1","TX, RRC District 10 Proved Nonproducing Reserves",5,"Annual",2014,"6/30/1996" ,"Release Date:","11/19/2015" ,"Next Release Date:","12/31/2016" ,"Excel File

  9. ,"TX, RRC District 10 Shale Gas Proved Reserves, Reserves Changes, and Production"

    Energy Information Administration (EIA) (indexed site)

    Shale Gas Proved Reserves, Reserves Changes, and Production" ,"Click worksheet name or tab at bottom for data" ,"Worksheet Name","Description","# Of Series","Frequency","Latest Data for" ,"Data 1","TX, RRC District 10 Shale Gas Proved Reserves, Reserves Changes, and Production",10,"Annual",2014,"6/30/2007" ,"Release Date:","11/19/2015" ,"Next Release

  10. ,"TX, RRC District 2 Onshore Crude Oil plus Lease Condensate Proved Reserves"

    Energy Information Administration (EIA) (indexed site)

    Crude Oil plus Lease Condensate Proved Reserves" ,"Click worksheet name or tab at bottom for data" ,"Worksheet Name","Description","# Of Series","Frequency","Latest Data for" ,"Data 1","TX, RRC District 2 Onshore Crude Oil plus Lease Condensate Proved Reserves",10,"Annual",2014,"6/30/2009" ,"Release Date:","11/19/2015" ,"Next Release Date:","12/31/2016"

  11. ,"TX, RRC District 2 Onshore Dry Natural Gas Proved Reserves"

    Energy Information Administration (EIA) (indexed site)

    Dry Natural Gas Proved Reserves" ,"Click worksheet name or tab at bottom for data" ,"Worksheet Name","Description","# Of Series","Frequency","Latest Data for" ,"Data 1","TX, RRC District 2 Onshore Dry Natural Gas Proved Reserves",10,"Annual",2014,"6/30/1977" ,"Release Date:","11/19/2015" ,"Next Release Date:","12/31/2016" ,"Excel File

  12. ,"TX, RRC District 2 Onshore Proved Nonproducing Reserves"

    Energy Information Administration (EIA) (indexed site)

    Proved Nonproducing Reserves" ,"Click worksheet name or tab at bottom for data" ,"Worksheet Name","Description","# Of Series","Frequency","Latest Data for" ,"Data 1","TX, RRC District 2 Onshore Proved Nonproducing Reserves",5,"Annual",2014,"6/30/1996" ,"Release Date:","11/19/2015" ,"Next Release Date:","12/31/2016" ,"Excel File

  13. ,"TX, RRC District 3 Onshore Crude Oil plus Lease Condensate Proved Reserves"

    Energy Information Administration (EIA) (indexed site)

    Crude Oil plus Lease Condensate Proved Reserves" ,"Click worksheet name or tab at bottom for data" ,"Worksheet Name","Description","# Of Series","Frequency","Latest Data for" ,"Data 1","TX, RRC District 3 Onshore Crude Oil plus Lease Condensate Proved Reserves",10,"Annual",2014,"6/30/2009" ,"Release Date:","11/19/2015" ,"Next Release Date:","12/31/2016"

  14. ,"TX, RRC District 3 Onshore Dry Natural Gas Proved Reserves"

    Energy Information Administration (EIA) (indexed site)

    Dry Natural Gas Proved Reserves" ,"Click worksheet name or tab at bottom for data" ,"Worksheet Name","Description","# Of Series","Frequency","Latest Data for" ,"Data 1","TX, RRC District 3 Onshore Dry Natural Gas Proved Reserves",10,"Annual",2014,"6/30/1977" ,"Release Date:","11/19/2015" ,"Next Release Date:","12/31/2016" ,"Excel File

  15. ,"TX, RRC District 3 Onshore Proved Nonproducing Reserves"

    Energy Information Administration (EIA) (indexed site)

    Proved Nonproducing Reserves" ,"Click worksheet name or tab at bottom for data" ,"Worksheet Name","Description","# Of Series","Frequency","Latest Data for" ,"Data 1","TX, RRC District 3 Onshore Proved Nonproducing Reserves",5,"Annual",2014,"6/30/1996" ,"Release Date:","11/19/2015" ,"Next Release Date:","12/31/2016" ,"Excel File

  16. ,"TX, RRC District 4 Onshore Crude Oil plus Lease Condensate Proved Reserves"

    Energy Information Administration (EIA) (indexed site)

    Crude Oil plus Lease Condensate Proved Reserves" ,"Click worksheet name or tab at bottom for data" ,"Worksheet Name","Description","# Of Series","Frequency","Latest Data for" ,"Data 1","TX, RRC District 4 Onshore Crude Oil plus Lease Condensate Proved Reserves",10,"Annual",2014,"6/30/2009" ,"Release Date:","11/19/2015" ,"Next Release Date:","12/31/2016"

  17. ,"TX, RRC District 4 Onshore Dry Natural Gas Proved Reserves"

    Energy Information Administration (EIA) (indexed site)

    Dry Natural Gas Proved Reserves" ,"Click worksheet name or tab at bottom for data" ,"Worksheet Name","Description","# Of Series","Frequency","Latest Data for" ,"Data 1","TX, RRC District 4 Onshore Dry Natural Gas Proved Reserves",10,"Annual",2014,"6/30/1977" ,"Release Date:","11/19/2015" ,"Next Release Date:","12/31/2016" ,"Excel File

  18. ,"TX, RRC District 4 Onshore Proved Nonproducing Reserves"

    Energy Information Administration (EIA) (indexed site)

    Proved Nonproducing Reserves" ,"Click worksheet name or tab at bottom for data" ,"Worksheet Name","Description","# Of Series","Frequency","Latest Data for" ,"Data 1","TX, RRC District 4 Onshore Proved Nonproducing Reserves",5,"Annual",2014,"6/30/1996" ,"Release Date:","11/19/2015" ,"Next Release Date:","12/31/2016" ,"Excel File

  19. ,"TX, RRC District 5 Crude Oil plus Lease Condensate Proved Reserves"

    Energy Information Administration (EIA) (indexed site)

    Crude Oil plus Lease Condensate Proved Reserves" ,"Click worksheet name or tab at bottom for data" ,"Worksheet Name","Description","# Of Series","Frequency","Latest Data for" ,"Data 1","TX, RRC District 5 Crude Oil plus Lease Condensate Proved Reserves",10,"Annual",2014,"6/30/2009" ,"Release Date:","11/19/2015" ,"Next Release Date:","12/31/2016"

  20. ,"TX, RRC District 5 Dry Natural Gas Proved Reserves"

    Energy Information Administration (EIA) (indexed site)

    Dry Natural Gas Proved Reserves" ,"Click worksheet name or tab at bottom for data" ,"Worksheet Name","Description","# Of Series","Frequency","Latest Data for" ,"Data 1","TX, RRC District 5 Dry Natural Gas Proved Reserves",10,"Annual",2014,"6/30/1977" ,"Release Date:","11/19/2015" ,"Next Release Date:","12/31/2016" ,"Excel File

  1. ,"TX, RRC District 5 Lease Condensate Proved Reserves, Reserve Changes, and Production"

    Energy Information Administration (EIA) (indexed site)

    Lease Condensate Proved Reserves, Reserve Changes, and Production" ,"Click worksheet name or tab at bottom for data" ,"Worksheet Name","Description","# Of Series","Frequency","Latest Data for" ,"Data 1","TX, RRC District 5 Lease Condensate Proved Reserves, Reserve Changes, and Production",10,"Annual",2014,"6/30/1979" ,"Release Date:","11/19/2015" ,"Next Release

  2. ,"TX, RRC District 5 Proved Nonproducing Reserves"

    Energy Information Administration (EIA) (indexed site)

    Proved Nonproducing Reserves" ,"Click worksheet name or tab at bottom for data" ,"Worksheet Name","Description","# Of Series","Frequency","Latest Data for" ,"Data 1","TX, RRC District 5 Proved Nonproducing Reserves",5,"Annual",2014,"6/30/1996" ,"Release Date:","11/19/2015" ,"Next Release Date:","12/31/2016" ,"Excel File

  3. ,"TX, RRC District 5 Shale Gas Proved Reserves, Reserves Changes, and Production"

    Energy Information Administration (EIA) (indexed site)

    Shale Gas Proved Reserves, Reserves Changes, and Production" ,"Click worksheet name or tab at bottom for data" ,"Worksheet Name","Description","# Of Series","Frequency","Latest Data for" ,"Data 1","TX, RRC District 5 Shale Gas Proved Reserves, Reserves Changes, and Production",10,"Annual",2014,"6/30/2007" ,"Release Date:","11/19/2015" ,"Next Release

  4. ,"TX, RRC District 6 Crude Oil plus Lease Condensate Proved Reserves"

    Energy Information Administration (EIA) (indexed site)

    Crude Oil plus Lease Condensate Proved Reserves" ,"Click worksheet name or tab at bottom for data" ,"Worksheet Name","Description","# Of Series","Frequency","Latest Data for" ,"Data 1","TX, RRC District 6 Crude Oil plus Lease Condensate Proved Reserves",10,"Annual",2014,"6/30/2009" ,"Release Date:","11/19/2015" ,"Next Release Date:","12/31/2016"

  5. ,"TX, RRC District 6 Dry Natural Gas Proved Reserves"

    Energy Information Administration (EIA) (indexed site)

    Dry Natural Gas Proved Reserves" ,"Click worksheet name or tab at bottom for data" ,"Worksheet Name","Description","# Of Series","Frequency","Latest Data for" ,"Data 1","TX, RRC District 6 Dry Natural Gas Proved Reserves",10,"Annual",2014,"6/30/1977" ,"Release Date:","11/19/2015" ,"Next Release Date:","12/31/2016" ,"Excel File

  6. ,"TX, RRC District 6 Lease Condensate Proved Reserves, Reserve Changes, and Production"

    Energy Information Administration (EIA) (indexed site)

    Lease Condensate Proved Reserves, Reserve Changes, and Production" ,"Click worksheet name or tab at bottom for data" ,"Worksheet Name","Description","# Of Series","Frequency","Latest Data for" ,"Data 1","TX, RRC District 6 Lease Condensate Proved Reserves, Reserve Changes, and Production",10,"Annual",2014,"6/30/1979" ,"Release Date:","11/19/2015" ,"Next Release

  7. ,"TX, RRC District 6 Proved Nonproducing Reserves"

    Energy Information Administration (EIA) (indexed site)

    Proved Nonproducing Reserves" ,"Click worksheet name or tab at bottom for data" ,"Worksheet Name","Description","# Of Series","Frequency","Latest Data for" ,"Data 1","TX, RRC District 6 Proved Nonproducing Reserves",5,"Annual",2014,"6/30/1996" ,"Release Date:","11/19/2015" ,"Next Release Date:","12/31/2016" ,"Excel File

  8. ,"TX, RRC District 6 Shale Gas Proved Reserves, Reserves Changes, and Production"

    Energy Information Administration (EIA) (indexed site)

    Shale Gas Proved Reserves, Reserves Changes, and Production" ,"Click worksheet name or tab at bottom for data" ,"Worksheet Name","Description","# Of Series","Frequency","Latest Data for" ,"Data 1","TX, RRC District 6 Shale Gas Proved Reserves, Reserves Changes, and Production",10,"Annual",2014,"6/30/2007" ,"Release Date:","11/19/2015" ,"Next Release

  9. ,"TX, RRC District 7B Crude Oil plus Lease Condensate Proved Reserves"

    Energy Information Administration (EIA) (indexed site)

    Crude Oil plus Lease Condensate Proved Reserves" ,"Click worksheet name or tab at bottom for data" ,"Worksheet Name","Description","# Of Series","Frequency","Latest Data for" ,"Data 1","TX, RRC District 7B Crude Oil plus Lease Condensate Proved Reserves",10,"Annual",2014,"6/30/2009" ,"Release Date:","11/19/2015" ,"Next Release Date:","12/31/2016"

  10. ,"TX, RRC District 7B Dry Natural Gas Proved Reserves"

    Energy Information Administration (EIA) (indexed site)

    Dry Natural Gas Proved Reserves" ,"Click worksheet name or tab at bottom for data" ,"Worksheet Name","Description","# Of Series","Frequency","Latest Data for" ,"Data 1","TX, RRC District 7B Dry Natural Gas Proved Reserves",10,"Annual",2014,"6/30/1977" ,"Release Date:","11/19/2015" ,"Next Release Date:","12/31/2016" ,"Excel File

  11. ,"TX, RRC District 7B Proved Nonproducing Reserves"

    Energy Information Administration (EIA) (indexed site)

    Proved Nonproducing Reserves" ,"Click worksheet name or tab at bottom for data" ,"Worksheet Name","Description","# Of Series","Frequency","Latest Data for" ,"Data 1","TX, RRC District 7B Proved Nonproducing Reserves",5,"Annual",2014,"6/30/1996" ,"Release Date:","11/19/2015" ,"Next Release Date:","12/31/2016" ,"Excel File

  12. ,"TX, RRC District 7C Crude Oil plus Lease Condensate Proved Reserves"

    Energy Information Administration (EIA) (indexed site)

    Crude Oil plus Lease Condensate Proved Reserves" ,"Click worksheet name or tab at bottom for data" ,"Worksheet Name","Description","# Of Series","Frequency","Latest Data for" ,"Data 1","TX, RRC District 7C Crude Oil plus Lease Condensate Proved Reserves",10,"Annual",2014,"6/30/2009" ,"Release Date:","11/19/2015" ,"Next Release Date:","12/31/2016"

  13. ,"TX, RRC District 7C Dry Natural Gas Proved Reserves"

    Energy Information Administration (EIA) (indexed site)

    Dry Natural Gas Proved Reserves" ,"Click worksheet name or tab at bottom for data" ,"Worksheet Name","Description","# Of Series","Frequency","Latest Data for" ,"Data 1","TX, RRC District 7C Dry Natural Gas Proved Reserves",10,"Annual",2014,"6/30/1977" ,"Release Date:","11/19/2015" ,"Next Release Date:","12/31/2016" ,"Excel File

  14. ,"TX, RRC District 7C Proved Nonproducing Reserves"

    Energy Information Administration (EIA) (indexed site)

    Proved Nonproducing Reserves" ,"Click worksheet name or tab at bottom for data" ,"Worksheet Name","Description","# Of Series","Frequency","Latest Data for" ,"Data 1","TX, RRC District 7C Proved Nonproducing Reserves",5,"Annual",2014,"6/30/1996" ,"Release Date:","11/19/2015" ,"Next Release Date:","12/31/2016" ,"Excel File

  15. ,"TX, RRC District 8 Crude Oil plus Lease Condensate Proved Reserves"

    Energy Information Administration (EIA) (indexed site)

    Crude Oil plus Lease Condensate Proved Reserves" ,"Click worksheet name or tab at bottom for data" ,"Worksheet Name","Description","# Of Series","Frequency","Latest Data for" ,"Data 1","TX, RRC District 8 Crude Oil plus Lease Condensate Proved Reserves",10,"Annual",2014,"6/30/2009" ,"Release Date:","11/19/2015" ,"Next Release Date:","12/31/2016"

  16. ,"TX, RRC District 8 Dry Natural Gas Proved Reserves"

    Energy Information Administration (EIA) (indexed site)

    Dry Natural Gas Proved Reserves" ,"Click worksheet name or tab at bottom for data" ,"Worksheet Name","Description","# Of Series","Frequency","Latest Data for" ,"Data 1","TX, RRC District 8 Dry Natural Gas Proved Reserves",10,"Annual",2014,"6/30/1977" ,"Release Date:","11/19/2015" ,"Next Release Date:","12/31/2016" ,"Excel File

  17. ,"TX, RRC District 8 Lease Condensate Proved Reserves, Reserve Changes, and Production"

    Energy Information Administration (EIA) (indexed site)

    Lease Condensate Proved Reserves, Reserve Changes, and Production" ,"Click worksheet name or tab at bottom for data" ,"Worksheet Name","Description","# Of Series","Frequency","Latest Data for" ,"Data 1","TX, RRC District 8 Lease Condensate Proved Reserves, Reserve Changes, and Production",10,"Annual",2014,"6/30/1979" ,"Release Date:","11/19/2015" ,"Next Release

  18. ,"TX, RRC District 8 Proved Nonproducing Reserves"

    Energy Information Administration (EIA) (indexed site)

    Proved Nonproducing Reserves" ,"Click worksheet name or tab at bottom for data" ,"Worksheet Name","Description","# Of Series","Frequency","Latest Data for" ,"Data 1","TX, RRC District 8 Proved Nonproducing Reserves",5,"Annual",2014,"6/30/1996" ,"Release Date:","11/19/2015" ,"Next Release Date:","12/31/2016" ,"Excel File

  19. ,"TX, RRC District 8 Shale Gas Proved Reserves, Reserves Changes, and Production"

    Energy Information Administration (EIA) (indexed site)

    Shale Gas Proved Reserves, Reserves Changes, and Production" ,"Click worksheet name or tab at bottom for data" ,"Worksheet Name","Description","# Of Series","Frequency","Latest Data for" ,"Data 1","TX, RRC District 8 Shale Gas Proved Reserves, Reserves Changes, and Production",10,"Annual",2014,"6/30/2007" ,"Release Date:","11/19/2015" ,"Next Release

  20. ,"TX, RRC District 8A Crude Oil plus Lease Condensate Proved Reserves"

    Energy Information Administration (EIA) (indexed site)

    Crude Oil plus Lease Condensate Proved Reserves" ,"Click worksheet name or tab at bottom for data" ,"Worksheet Name","Description","# Of Series","Frequency","Latest Data for" ,"Data 1","TX, RRC District 8A Crude Oil plus Lease Condensate Proved Reserves",10,"Annual",2014,"6/30/2009" ,"Release Date:","11/19/2015" ,"Next Release Date:","12/31/2016"

  1. ,"TX, RRC District 8A Dry Natural Gas Proved Reserves"

    Energy Information Administration (EIA) (indexed site)

    Dry Natural Gas Proved Reserves" ,"Click worksheet name or tab at bottom for data" ,"Worksheet Name","Description","# Of Series","Frequency","Latest Data for" ,"Data 1","TX, RRC District 8A Dry Natural Gas Proved Reserves",10,"Annual",2014,"6/30/1977" ,"Release Date:","11/19/2015" ,"Next Release Date:","12/31/2016" ,"Excel File

  2. ,"TX, RRC District 8A Proved Nonproducing Reserves"

    Energy Information Administration (EIA) (indexed site)

    Proved Nonproducing Reserves" ,"Click worksheet name or tab at bottom for data" ,"Worksheet Name","Description","# Of Series","Frequency","Latest Data for" ,"Data 1","TX, RRC District 8A Proved Nonproducing Reserves",5,"Annual",2014,"6/30/1996" ,"Release Date:","11/19/2015" ,"Next Release Date:","12/31/2016" ,"Excel File

  3. ,"TX, RRC District 9 Crude Oil plus Lease Condensate Proved Reserves"

    Energy Information Administration (EIA) (indexed site)

    Crude Oil plus Lease Condensate Proved Reserves" ,"Click worksheet name or tab at bottom for data" ,"Worksheet Name","Description","# Of Series","Frequency","Latest Data for" ,"Data 1","TX, RRC District 9 Crude Oil plus Lease Condensate Proved Reserves",10,"Annual",2014,"6/30/2009" ,"Release Date:","11/19/2015" ,"Next Release Date:","12/31/2016"

  4. ,"TX, RRC District 9 Dry Natural Gas Proved Reserves"

    Energy Information Administration (EIA) (indexed site)

    Dry Natural Gas Proved Reserves" ,"Click worksheet name or tab at bottom for data" ,"Worksheet Name","Description","# Of Series","Frequency","Latest Data for" ,"Data 1","TX, RRC District 9 Dry Natural Gas Proved Reserves",10,"Annual",2014,"6/30/1977" ,"Release Date:","11/19/2015" ,"Next Release Date:","12/31/2016" ,"Excel File

  5. ,"TX, RRC District 9 Lease Condensate Proved Reserves, Reserve Changes, and Production"

    Energy Information Administration (EIA) (indexed site)

    Lease Condensate Proved Reserves, Reserve Changes, and Production" ,"Click worksheet name or tab at bottom for data" ,"Worksheet Name","Description","# Of Series","Frequency","Latest Data for" ,"Data 1","TX, RRC District 9 Lease Condensate Proved Reserves, Reserve Changes, and Production",10,"Annual",2014,"6/30/1979" ,"Release Date:","11/19/2015" ,"Next Release

  6. ,"TX, RRC District 9 Proved Nonproducing Reserves"

    Energy Information Administration (EIA) (indexed site)

    Proved Nonproducing Reserves" ,"Click worksheet name or tab at bottom for data" ,"Worksheet Name","Description","# Of Series","Frequency","Latest Data for" ,"Data 1","TX, RRC District 9 Proved Nonproducing Reserves",5,"Annual",2014,"6/30/1996" ,"Release Date:","11/19/2015" ,"Next Release Date:","12/31/2016" ,"Excel File

  7. ,"TX, RRC District 9 Shale Gas Proved Reserves, Reserves Changes, and Production"

    Energy Information Administration (EIA) (indexed site)

    Shale Gas Proved Reserves, Reserves Changes, and Production" ,"Click worksheet name or tab at bottom for data" ,"Worksheet Name","Description","# Of Series","Frequency","Latest Data for" ,"Data 1","TX, RRC District 9 Shale Gas Proved Reserves, Reserves Changes, and Production",10,"Annual",2014,"6/30/2007" ,"Release Date:","11/19/2015" ,"Next Release

  8. ,"TX, State Offshore Crude Oil plus Lease Condensate Proved Reserves"

    Energy Information Administration (EIA) (indexed site)

    Crude Oil plus Lease Condensate Proved Reserves" ,"Click worksheet name or tab at bottom for data" ,"Worksheet Name","Description","# Of Series","Frequency","Latest Data for" ,"Data 1","TX, State Offshore Crude Oil plus Lease Condensate Proved Reserves",10,"Annual",2014,"6/30/2009" ,"Release Date:","11/19/2015" ,"Next Release Date:","12/31/2016"

  9. ,"TX, State Offshore Dry Natural Gas Proved Reserves"

    Energy Information Administration (EIA) (indexed site)

    Dry Natural Gas Proved Reserves" ,"Click worksheet name or tab at bottom for data" ,"Worksheet Name","Description","# Of Series","Frequency","Latest Data for" ,"Data 1","TX, State Offshore Dry Natural Gas Proved Reserves",10,"Annual",2014,"6/30/1981" ,"Release Date:","11/19/2015" ,"Next Release Date:","12/31/2016" ,"Excel File

  10. ,"TX, State Offshore Lease Condensate Proved Reserves, Reserve Changes, and Production"

    Energy Information Administration (EIA) (indexed site)

    Lease Condensate Proved Reserves, Reserve Changes, and Production" ,"Click worksheet name or tab at bottom for data" ,"Worksheet Name","Description","# Of Series","Frequency","Latest Data for" ,"Data 1","TX, State Offshore Lease Condensate Proved Reserves, Reserve Changes, and Production",10,"Annual",2014,"6/30/1981" ,"Release Date:","11/19/2015" ,"Next Release

  11. ,"TX, State Offshore Nonassociated Natural Gas Proved Reserves, Wet After Lease Separation"

    Energy Information Administration (EIA) (indexed site)

    Nonassociated Natural Gas Proved Reserves, Wet After Lease Separation" ,"Click worksheet name or tab at bottom for data" ,"Worksheet Name","Description","# Of Series","Frequency","Latest Data for" ,"Data 1","TX, State Offshore Nonassociated Natural Gas Proved Reserves, Wet After Lease Separation",10,"Annual",2014,"6/30/1981" ,"Release Date:","11/19/2015" ,"Next

  12. ,"TX, State Offshore Shale Gas Proved Reserves, Reserves Changes, and Production"

    Energy Information Administration (EIA) (indexed site)

    Shale Gas Proved Reserves, Reserves Changes, and Production" ,"Click worksheet name or tab at bottom for data" ,"Worksheet Name","Description","# Of Series","Frequency","Latest Data for" ,"Data 1","TX, State Offshore Shale Gas Proved Reserves, Reserves Changes, and Production",10,"Annual",2010,"6/30/2007" ,"Release Date:","11/19/2015" ,"Next Release

  13. El Paso, TX Natural Gas Pipeline Imports From Mexico (Dollars per Thousand

    Energy Information Administration (EIA) (indexed site)

    Cubic Feet) Dollars per Thousand Cubic Feet) El Paso, TX Natural Gas Pipeline Imports From Mexico (Dollars per Thousand Cubic Feet) Decade Year-0 Year-1 Year-2 Year-3 Year-4 Year-5 Year-6 Year-7 Year-8 Year-9 1990's 2.09 - = No Data Reported; -- = Not Applicable; NA = Not Available; W = Withheld to avoid disclosure of individual company data. Release Date: 10/31/2016 Next Release Date: 11/30/2016 Referring Pages: U.S. Price of

  14. Golden Pass, TX Natural Gas Liquefied Natural Gas Imports from Qatar

    Energy Information Administration (EIA) (indexed site)

    (Million Cubic Feet) from Qatar (Million Cubic Feet) Golden Pass, TX Natural Gas Liquefied Natural Gas Imports from Qatar (Million Cubic Feet) Year Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec 2011 3,902 4,896 4,100 18,487 4,900 - = No Data Reported; -- = Not Applicable; NA = Not Available; W = Withheld to avoid disclosure of individual company data. Release Date: 10/31/2016 Next Release Date: 11/30/2016 Referring Pages: U.S.

  15. Laredo, TX Liquefied Natural Gas Exports to Mexico (Dollars per Thousand

    Energy Information Administration (EIA) (indexed site)

    Cubic Feet) Dollars per Thousand Cubic Feet) Laredo, TX Liquefied Natural Gas Exports to Mexico (Dollars per Thousand Cubic Feet) Year Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec 2015 16.950 17.180 2016 9.870 7.860 8.270 9.780 9.710 9.710 9.710 - = No Data Reported; -- = Not Applicable; NA = Not Available; W = Withheld to avoid disclosure of individual company data. Release Date: 10/31/2016 Next Release Date: 11/30/2016 Referring Pages: U.S. Price of

  16. Laredo, TX Liquefied Natural Gas Exports to Mexico (Million Cubic Feet)

    Energy Information Administration (EIA) (indexed site)

    Million Cubic Feet) Laredo, TX Liquefied Natural Gas Exports to Mexico (Million Cubic Feet) Year Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec 2015 0.512 0.497 2016 2.732 6.966 8.196 17.926 12.429 21.171 22.582 - = No Data Reported; -- = Not Applicable; NA = Not Available; W = Withheld to avoid disclosure of individual company data. Release Date: 10/31/2016 Next Release Date: 11/30/2016 Referring Pages: U.S.

  17. Investigation of the GaN-on-GaAs interface for vertical power device applications

    SciTech Connect

    Mreke, Janina Uren, Michael J.; Kuball, Martin; Novikov, Sergei V.; Foxon, C. Thomas; Hosseini Vajargah, Shahrzad; Wallis, David J.; Humphreys, Colin J.; Haigh, Sarah J.; Al-Khalidi, Abdullah; Wasige, Edward; Thayne, Iain

    2014-07-07

    GaN layers were grown onto (111) GaAs by molecular beam epitaxy. Minimal band offset between the conduction bands for GaN and GaAs materials has been suggested in the literature raising the possibility of using GaN-on-GaAs for vertical power device applications. I-V and C-V measurements of the GaN/GaAs heterostructures however yielded a rectifying junction, even when both sides of the junction were heavily doped with an n-type dopant. Transmission electron microscopy analysis further confirmed the challenge in creating a GaN/GaAs Ohmic interface by showing a large density of dislocations in the GaN layer and suggesting roughening of the GaN/GaAs interface due to etching of the GaAs by the nitrogen plasma, diffusion of nitrogen or melting of Ga into the GaAs substrate.

  18. Cost-effectiveness analysis of TxDOT LPG fleet conversion. Volume 1. Interim research report

    SciTech Connect

    Euritt, M.A.; Taylor, D.B.; Mahmassani, H.

    1992-10-01

    Increased emphasis on energy efficiency and air quality has resulted in a number of state and federal initiatives examining the use of alternative fuels for motor vehicles. Texas' program for alternate fuels includes liquefied petroleum gas (LPG). Based on an analysis of 30-year life-cycle costs, development of a propane vehicle program for the Texas Department of Transportation (TxDOT) would cost about $24.3 million (in 1991 dollars). These costs include savings from lower-priced LPG and differentials between propane and gasoline/diesel in infrastructure costs for a fueling station, vehicle costs, and operating costs. The 30-year life-cycle costs translate into an average annual vehicle cost increase of $308, or about 2.5 cents more per vehicle mile of travel. Sensitivity analyses are performed on the discount rate, price of propane, maintenance savings, vehicle utilization, diesel vehicles, extended vehicle life, original equipment manufacturer (OEM) vehicles, and operating and infrastructure costs. The best results are obtained when not converting diesel vehicles, converting only large fleets, and extending the period the vehicle is kept in service. Combining these factors yields results that are most cost-effective for TxDOT. This is volume one of two volumes.

  19. Cost-effectiveness analysis of TxDOT LPG fleet conversion. Volume 2. Interim research report

    SciTech Connect

    Euritt, M.A.; Taylor, D.B.; Mahmassani, H.

    1992-11-01

    Increased emphasis on energy efficiency and air quality has resulted in a number of state and federal initiatives examining the use of alternative fuels for motor vehicles. Texas' program for alternate fuels includes liquefied petroleum gas (LPG), commonly called propane. Based on an analysis of 30-year life-cycle costs, development of a propane vehicle program for the Texas Department of Transportation (TxDOT) would cost about $24.3 million (in 1991 dollars). These costs include savings from lower-priced propane and differentials between propane and gasoline/diesel in infrastructure costs, vehicle costs, and operating costs. The 30-year life-cycle costs translate into an average annual vehicle cost increase of $308, or about 2.5 cents more per vehicle mile of travel. Based on the cost-effectiveness analysis and assumptions, there are currently no TxDOT locations that can be converted to propane without additional financial outlays. This is volume two of two volumes.

  20. U.S. Natural Gas Exports to Canada

    Gasoline and Diesel Fuel Update

    Total to Chile Sabine Pass, LA Total to China Kenai, AK Sabine Pass, LA Total to Egypt ... LA Total to Russia Kenai, AK Total to South Korea Freeport, TX Sabine Pass, LA Total ...

  1. U.S. Natural Gas Exports to Mexico

    Annual Energy Outlook

    Total to Chile Sabine Pass, LA Total to China Kenai, AK Sabine Pass, LA Total to Egypt ... LA Total to Russia Kenai, AK Total to South Korea Freeport, TX Sabine Pass, LA Total ...

  2. U.S. Natural Gas Exports to Mexico

    Gasoline and Diesel Fuel Update

    Total to Chile Sabine Pass, LA Total to China Kenai, AK Sabine Pass, LA Total to Egypt ... Sabine Pass, LA Total to Russia Total to South Korea Freeport, TX Sabine Pass, LA Total ...

  3. U.S. Natural Gas Exports to Canada

    Annual Energy Outlook

    Total to Chile Sabine Pass, LA Total to China Kenai, AK Sabine Pass, LA Total to Egypt ... Sabine Pass, LA Total to Russia Total to South Korea Freeport, TX Sabine Pass, LA Total ...

  4. Office of Fossil Energy

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    ... Company ConocoPhillips Company Koch Supply & Trading, LP 13-97-LNG Brazil Excalibur Freeport, TX 2,727,940 12.19 S TOTAL Re-Exports of LNG 5,532,898 S - Represents ...

  5. U.S. Natural Gas Imports by Pipeline from Canada

    Gasoline and Diesel Fuel Update

    Pass, LA LNG Imports from United Arab Emirates Lake Charles, LA LNG Imports from Yemen Everett, MA Freeport, TX Neptune Deepwater Port Sabine Pass, LA LNG Imports from Other ...

  6. U.S. Natural Gas Exports to Mexico

    Energy Information Administration (EIA) (indexed site)

    Pass, LA LNG Imports from United Arab Emirates Lake Charles, LA LNG Imports from Yemen Everett, MA Freeport, TX Neptune Deepwater Port Sabine Pass, LA LNG Imports from Other ...

  7. U.S. LNG Imports from Canada

    Gasoline and Diesel Fuel Update

    MT Total to Chile Sabine Pass, LA Total to China Kenai, AK Sabine Pass, LA Total to India Freeport, TX Sabine Pass, LA Total to Japan Cameron, LA Kenai, AK Sabine Pass, LA...

  8. U.S. Natural Gas Exports to Mexico

    Gasoline and Diesel Fuel Update

    MT Total to Chile Sabine Pass, LA Total to China Kenai, AK Sabine Pass, LA Total to India Freeport, TX Sabine Pass, LA Total to Japan Cameron, LA Kenai, AK Sabine Pass, LA...

  9. GA SNC Solar | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    GA-SNC Solar Place: Nevada Sector: Solar Product: Nevada-based PV project developer and joint venture of GA-Solar North America and Sierra Nevada Corp. References: GA-SNC...

  10. Strategic Plan for Groundwater Monitoring at the Waste Isolation Pilot Plant

    U.S. Department of Energy (DOE) - all webpages (Extended Search)

    Reserves » Strategic Petroleum Reserve Strategic Petroleum Reserve Crude oil pipes at the Bryan Mound site, the largest of the four SPR storage sites - near Freeport, TX. Crude oil pipes at the Bryan Mound site, the largest of the four SPR storage sites - near Freeport, TX. The Strategic Petroleum Reserve (SPR) is the world's largest supply of emergency crude oil. The federally-owned oil stocks are stored in huge underground salt caverns along the coastline of the Gulf of Mexico. Decisions to

  11. EIS-0412: Federal Loan Guarantee to Support Construction of the TX Energy LLC, Industrial Gasification Facility near Beaumont, Texas

    Energy.gov [DOE]

    The Department of Energy is assessing the potential environmental impacts for its proposed action of issuing a Federal loan guarantee to TX Energy, LLC (TXE). TXE submitted an application to DOE under the Federal loan guarantee program pursuant to the Energy Policy Act of 2005 (EPAct 2005) to support construction of the TXE industrial Gasification Facility near Beaumont, Texas.

  12. RCRA Assessment Plan for Single-Shell Tank Waste Management Area TX-TY at the Hanford Site

    SciTech Connect

    Hodges, Floyd N.; Chou, Charissa J.

    2001-02-23

    A groundwater quality assessment plan was prepared to investigate the rate and extent of aquifer contamination beneath Waste Management Area TX-TY on the Hanford Site in Washington State. This plan is an update of a draft plan issued in February 1999, which guided work performed in fiscal year 2000.

  13. Hidalgo, TX Natural Gas Pipeline Imports From Mexico (Dollars per Thousand

    Energy Information Administration (EIA) (indexed site)

    Cubic Feet) Dollars per Thousand Cubic Feet) Hidalgo, TX Natural Gas Pipeline Imports From Mexico (Dollars per Thousand Cubic Feet) Decade Year-0 Year-1 Year-2 Year-3 Year-4 Year-5 Year-6 Year-7 Year-8 Year-9 1990's 2.26 2.31 2.03 2.09 2000's 5.85 4.61 2.26 -- -- 8.10 5.53 6.23 5.55 4.40 2010's 4.21 -- -- -- -- - = No Data Reported; -- = Not Applicable; NA = Not Available; W = Withheld to avoid disclosure of individual company data. Release Date: 10/31/2016 Next Release Date: 11/30/2016

  14. GaInNAs laser gain

    SciTech Connect

    CHOW,WENG W.; JONES,ERIC D.; MODINE,NORMAND A.; KURTZ,STEVEN R.; ALLERMAN,ANDREW A.

    2000-05-23

    The optical gain spectra for GaInNAs/GaAs quantum wells are computed using a microscopic laser theory. From these spectra, the peak gain and carrier radiative decay rate as functions of carrier density are determined. These dependences allow the study of the lasing threshold current density of GaInNAs/GaAs quantum well structures.

  15. GaAs, AlGaAs and InGaP Tunnel Junctions for Multi-Junction Solar Cells Under Concentration: Resistance Study

    SciTech Connect

    Wheeldon, Jeffrey F.; Valdivia, Christopher E.; Walker, Alex; Kolhatkar, Gitanja; Hall, Trevor J.; Hinzer, Karin; Masson, Denis; Riel, Bruno; Fafard, Simon; Jaouad, Abdelatif; Turala, Artur; Ares, Richard; Aimez, Vincent

    2010-10-14

    The following four TJ designs, AlGaAs/AlGaAs, GaAs/GaAs, AlGaAs/InGaP and AlGaAs/GaAs are studied to determine minimum doping concentration to achieve a resistance of <10{sup -4} {omega}{center_dot}cm{sup 2} and a peak tunneling current suitable for MJ solar cells up to 1500-suns concentration (operating current of 21 A/cm{sup 2}). Experimentally calibrated numerical models are used to determine how the resistance changes as a function of doping concentration. The AlGaAs/GaAs TJ design is determined to require the least doping concentration to achieve the specified resistance and peak tunneling current, followed by the GaAs/GaAs, and AlGaAs/AlGaAs TJ designs. The AlGaAs/InGaP TJ design can only achieve resistances >5x10{sup -4} {omega}cm{sup 2}.

  16. General Atomics (GA) Fusion News: A New Spin on Understanding...

    U.S. Department of Energy (DOE) - all webpages (Extended Search)

    General Atomics (GA) Fusion News: A New Spin on Understanding Plasma Confinement American Fusion News Category: General Atomics (GA) Link: General Atomics (GA) Fusion News: A New ...

  17. Intense terahertz emission from molecular beam epitaxy-grown GaAs/GaSb(001)

    SciTech Connect

    Sadia, Cyril P.; Laganapan, Aleena Maria; Agatha Tumanguil, Mae; Estacio, Elmer; Somintac, Armando; Salvador, Arnel; Que, Christopher T.; Yamamoto, Kohji; Tani, Masahiko

    2012-12-15

    Intense terahertz (THz) electromagnetic wave emission was observed in undoped GaAs thin films deposited on (100) n-GaSb substrates via molecular beam epitaxy. GaAs/n-GaSb heterostructures were found to be viable THz sources having signal amplitude 75% that of bulk p-InAs. The GaAs films were grown by interruption method during the growth initiation and using various metamorphic buffer layers. Reciprocal space maps revealed that the GaAs epilayers are tensile relaxed. Defects at the i-GaAs/n-GaSb interface were confirmed by scanning electron microscope images. Band calculations were performed to infer the depletion region and electric field at the i-GaAs/n-GaSb and the air-GaAs interfaces. However, the resulting band calculations were found to be insufficient to explain the THz emission. The enhanced THz emission is currently attributed to a piezoelectric field induced by incoherent strain and defects.

  18. Nanoscale elastic changes in 2D Ti3C2Tx (MXene) pseudocapacitive electrodes

    DOE PAGES [OSTI]

    Come, Jeremy; Xie, Yu; Naguib, Michael; Jesse, Stephen; Kalinin, Sergei V.; Gogotsi, Yury; Kent, Paul R. C.; Balke, Nina

    2016-02-01

    Designing sustainable electrodes for next generation energy storage devices relies on the understanding of their fundamental properties at the nanoscale, including the comprehension of ions insertion into the electrode and their interactions with the active material. One consequence of ion storage is the change in the electrode volume resulting in mechanical strain and stress that can strongly affect the cycle life. Therefore, it is important to understand the changes of dimensions and mechanical properties occurring during electrochemical reactions. While the characterization of mechanical properties via macroscopic measurements is well documented, in-situ characterization of their evolution has never been achieved atmore » the nanoscale. Two dimensional (2D) carbides, known as MXenes, are promising materials for supercapacitors and various kinds of batteries, and understating the coupling between their mechanical and electrochemical properties is therefore necessary. Here we report on in-situ imaging, combined with density functional theory of the elastic changes, of a 2D titanium carbide (Ti3C2Tx) electrode in direction normal to the basal plane during cation intercalation. The results show a strong correlation between the Li+ ions content and the elastic modulus, whereas little effects of K+ ions are observed. Moreover, this strategy enables identifying the preferential intercalation pathways within a single particle.« less

  19. Reservoir fracture mapping using microearthquakes: Austin chalk, Giddings field, TX and 76 field, Clinton Co., KY

    SciTech Connect

    Phillips, W.S.; Rutledge, J.T.; Gardner, T.L.; Fairbanks, T.D.; Miller, M.E.; Schuessler, B.K.

    1996-11-01

    Patterns of microearthquakes detected downhole defined fracture orientation and extent in the Austin chalk, Giddings field, TX and the 76 field, Clinton Co., KY. We collected over 480 and 770 microearthquakes during hydraulic stimulation at two sites in the Austin chalk, and over 3200 during primary production in Clinton Co. Data were of high enough quality that 20%, 31% and 53% of the events could be located, respectively. Reflected waves constrained microearthquakes to the stimulated depths at the base of the Austin chalk. In plan view, microearthquakes defined elongate fracture zones extending from the stimulation wells parallel to the regional fracture trend. However, widths of the stimulated zones differed by a factor of five between the two Austin chalk sites, indicating a large difference in the population of ancillary fractures. Post-stimulation production was much higher from the wider zone. At Clinton Co., microearthquakes defined low-angle, reverse-fault fracture zones above and below a producing zone. Associations with depleted production intervals indicated the mapped fractures had been previously drained. Drilling showed that the fractures currently contain brine. The seismic behavior was consistent with poroelastic models that predicted slight increases in compressive stress above and below the drained volume.

  20. New GaInP/GaAs/GaInAs, Triple-Bandgap, Tandem Solar Cell for High-Efficiency Terrestrial Concentrator Systems

    SciTech Connect

    Kurtz, S.; Wanlass, M.; Kramer, C.; Young, M.; Geisz, J.; Ward, S.; Duda, A.; Moriarty, T.; Carapella, J.; Ahrenkiel, P.; Emery. K.; Jones, K.; Romero, M.; Kibbler, A.; Olson, J.; Friedman, D.; McMahon, W.; Ptak, A.

    2005-11-01

    GaInP/GaAs/GaInAs three-junction cells are grown in an inverted configuration on GaAs, allowing high quality growth of the lattice matched GaInP and GaAs layers before a grade is used for the 1-eV GaInAs layer. Using this approach an efficiency of 37.9% was demonstrated.

  1. Temperature coefficients for GaInP/GaAs/GaInNAsSb solar cells

    SciTech Connect

    Aho, Arto; Isoaho, Riku; Tukiainen, Antti; Polojärvi, Ville; Aho, Timo; Raappana, Marianna; Guina, Mircea

    2015-09-28

    We report the temperature coefficients for MBE-grown GaInP/GaAs/GaInNAsSb multijunction solar cells and the corresponding single junction sub-cells. Temperature-dependent current-voltage measurements were carried out using a solar simulator equipped with a 1000 W Xenon lamp and a three-band AM1.5D simulator. The triple-junction cell exhibited an efficiency of 31% at AM1.5G illumination and an efficiency of 37–39% at 70x real sun concentration. The external quantum efficiency was also measured at different temperatures. The temperature coefficients up to 80°C, for the open circuit voltage, the short circuit current density, and the conversion efficiency were determined to be −7.5 mV/°C, 0.040 mA/cm{sup 2}/°C, and −0.09%/°C, respectively.

  2. ,"TX, RRC District 1 Associated-Dissolved Natural Gas Proved Reserves, Wet After Lease Separation"

    Energy Information Administration (EIA) (indexed site)

    Associated-Dissolved Natural Gas Proved Reserves, Wet After Lease Separation" ,"Click worksheet name or tab at bottom for data" ,"Worksheet Name","Description","# Of Series","Frequency","Latest Data for" ,"Data 1","TX, RRC District 1 Associated-Dissolved Natural Gas Proved Reserves, Wet After Lease Separation",10,"Annual",2014,"6/30/1979" ,"Release Date:","11/19/2015"

  3. ,"TX, RRC District 1 Nonassociated Natural Gas Proved Reserves, Wet After Lease Separation"

    Energy Information Administration (EIA) (indexed site)

    Nonassociated Natural Gas Proved Reserves, Wet After Lease Separation" ,"Click worksheet name or tab at bottom for data" ,"Worksheet Name","Description","# Of Series","Frequency","Latest Data for" ,"Data 1","TX, RRC District 1 Nonassociated Natural Gas Proved Reserves, Wet After Lease Separation",10,"Annual",2014,"6/30/1979" ,"Release Date:","11/19/2015" ,"Next

  4. ,"TX, RRC District 10 Associated-Dissolved Natural Gas Proved Reserves, Wet After Lease Separation"

    Energy Information Administration (EIA) (indexed site)

    Associated-Dissolved Natural Gas Proved Reserves, Wet After Lease Separation" ,"Click worksheet name or tab at bottom for data" ,"Worksheet Name","Description","# Of Series","Frequency","Latest Data for" ,"Data 1","TX, RRC District 10 Associated-Dissolved Natural Gas Proved Reserves, Wet After Lease Separation",10,"Annual",2014,"6/30/1979" ,"Release Date:","11/19/2015"

  5. ,"TX, RRC District 10 Nonassociated Natural Gas Proved Reserves, Wet After Lease Separation"

    Energy Information Administration (EIA) (indexed site)

    Nonassociated Natural Gas Proved Reserves, Wet After Lease Separation" ,"Click worksheet name or tab at bottom for data" ,"Worksheet Name","Description","# Of Series","Frequency","Latest Data for" ,"Data 1","TX, RRC District 10 Nonassociated Natural Gas Proved Reserves, Wet After Lease Separation",10,"Annual",2014,"6/30/1979" ,"Release Date:","11/19/2015" ,"Next

  6. ,"TX, RRC District 2 Onshore Associated-Dissolved Natural Gas Proved Reserves, Wet After Lease Separation"

    Energy Information Administration (EIA) (indexed site)

    Associated-Dissolved Natural Gas Proved Reserves, Wet After Lease Separation" ,"Click worksheet name or tab at bottom for data" ,"Worksheet Name","Description","# Of Series","Frequency","Latest Data for" ,"Data 1","TX, RRC District 2 Onshore Associated-Dissolved Natural Gas Proved Reserves, Wet After Lease Separation",10,"Annual",2014,"6/30/1979" ,"Release

  7. ,"TX, RRC District 2 Onshore Coalbed Methane Proved Reserves, Reserves Changes, and Production"

    Energy Information Administration (EIA) (indexed site)

    Coalbed Methane Proved Reserves, Reserves Changes, and Production" ,"Click worksheet name or tab at bottom for data" ,"Worksheet Name","Description","# Of Series","Frequency","Latest Data for" ,"Data 1","TX, RRC District 2 Onshore Coalbed Methane Proved Reserves, Reserves Changes, and Production",10,"Annual",2014,"6/30/2005" ,"Release Date:","11/19/2015" ,"Next

  8. ,"TX, RRC District 2 Onshore Lease Condensate Proved Reserves, Reserve Changes, and Production"

    Energy Information Administration (EIA) (indexed site)

    Lease Condensate Proved Reserves, Reserve Changes, and Production" ,"Click worksheet name or tab at bottom for data" ,"Worksheet Name","Description","# Of Series","Frequency","Latest Data for" ,"Data 1","TX, RRC District 2 Onshore Lease Condensate Proved Reserves, Reserve Changes, and Production",10,"Annual",2014,"6/30/1979" ,"Release Date:","11/19/2015" ,"Next

  9. ,"TX, RRC District 2 Onshore Nonassociated Natural Gas Proved Reserves, Wet After Lease Separation"

    Energy Information Administration (EIA) (indexed site)

    Nonassociated Natural Gas Proved Reserves, Wet After Lease Separation" ,"Click worksheet name or tab at bottom for data" ,"Worksheet Name","Description","# Of Series","Frequency","Latest Data for" ,"Data 1","TX, RRC District 2 Onshore Nonassociated Natural Gas Proved Reserves, Wet After Lease Separation",10,"Annual",2014,"6/30/1979" ,"Release Date:","11/19/2015"

  10. ,"TX, RRC District 2 Onshore Shale Gas Proved Reserves, Reserves Changes, and Production"

    Energy Information Administration (EIA) (indexed site)

    Shale Gas Proved Reserves, Reserves Changes, and Production" ,"Click worksheet name or tab at bottom for data" ,"Worksheet Name","Description","# Of Series","Frequency","Latest Data for" ,"Data 1","TX, RRC District 2 Onshore Shale Gas Proved Reserves, Reserves Changes, and Production",10,"Annual",2014,"6/30/2010" ,"Release Date:","11/19/2015" ,"Next Release

  11. ,"TX, RRC District 3 Onshore Associated-Dissolved Natural Gas Proved Reserves, Wet After Lease Separation"

    Energy Information Administration (EIA) (indexed site)

    Associated-Dissolved Natural Gas Proved Reserves, Wet After Lease Separation" ,"Click worksheet name or tab at bottom for data" ,"Worksheet Name","Description","# Of Series","Frequency","Latest Data for" ,"Data 1","TX, RRC District 3 Onshore Associated-Dissolved Natural Gas Proved Reserves, Wet After Lease Separation",10,"Annual",2014,"6/30/1979" ,"Release

  12. ,"TX, RRC District 3 Onshore Coalbed Methane Proved Reserves, Reserves Changes, and Production"

    Energy Information Administration (EIA) (indexed site)

    Coalbed Methane Proved Reserves, Reserves Changes, and Production" ,"Click worksheet name or tab at bottom for data" ,"Worksheet Name","Description","# Of Series","Frequency","Latest Data for" ,"Data 1","TX, RRC District 3 Onshore Coalbed Methane Proved Reserves, Reserves Changes, and Production",10,"Annual",2014,"6/30/2005" ,"Release Date:","11/19/2015" ,"Next

  13. ,"TX, RRC District 3 Onshore Lease Condensate Proved Reserves, Reserve Changes, and Production"

    Energy Information Administration (EIA) (indexed site)

    Lease Condensate Proved Reserves, Reserve Changes, and Production" ,"Click worksheet name or tab at bottom for data" ,"Worksheet Name","Description","# Of Series","Frequency","Latest Data for" ,"Data 1","TX, RRC District 3 Onshore Lease Condensate Proved Reserves, Reserve Changes, and Production",10,"Annual",2014,"6/30/1979" ,"Release Date:","11/19/2015" ,"Next

  14. ,"TX, RRC District 3 Onshore Nonassociated Natural Gas Proved Reserves, Wet After Lease Separation"

    Energy Information Administration (EIA) (indexed site)

    Nonassociated Natural Gas Proved Reserves, Wet After Lease Separation" ,"Click worksheet name or tab at bottom for data" ,"Worksheet Name","Description","# Of Series","Frequency","Latest Data for" ,"Data 1","TX, RRC District 3 Onshore Nonassociated Natural Gas Proved Reserves, Wet After Lease Separation",10,"Annual",2014,"6/30/1979" ,"Release Date:","11/19/2015"

  15. ,"TX, RRC District 3 Onshore Shale Gas Proved Reserves, Reserves Changes, and Production"

    Energy Information Administration (EIA) (indexed site)

    Shale Gas Proved Reserves, Reserves Changes, and Production" ,"Click worksheet name or tab at bottom for data" ,"Worksheet Name","Description","# Of Series","Frequency","Latest Data for" ,"Data 1","TX, RRC District 3 Onshore Shale Gas Proved Reserves, Reserves Changes, and Production",10,"Annual",2014,"6/30/2007" ,"Release Date:","11/19/2015" ,"Next Release

  16. ,"TX, RRC District 4 Onshore Associated-Dissolved Natural Gas Proved Reserves, Wet After Lease Separation"

    Energy Information Administration (EIA) (indexed site)

    Associated-Dissolved Natural Gas Proved Reserves, Wet After Lease Separation" ,"Click worksheet name or tab at bottom for data" ,"Worksheet Name","Description","# Of Series","Frequency","Latest Data for" ,"Data 1","TX, RRC District 4 Onshore Associated-Dissolved Natural Gas Proved Reserves, Wet After Lease Separation",10,"Annual",2014,"6/30/1979" ,"Release

  17. ,"TX, RRC District 4 Onshore Coalbed Methane Proved Reserves, Reserves Changes, and Production"

    Energy Information Administration (EIA) (indexed site)

    Coalbed Methane Proved Reserves, Reserves Changes, and Production" ,"Click worksheet name or tab at bottom for data" ,"Worksheet Name","Description","# Of Series","Frequency","Latest Data for" ,"Data 1","TX, RRC District 4 Onshore Coalbed Methane Proved Reserves, Reserves Changes, and Production",10,"Annual",2014,"6/30/2005" ,"Release Date:","11/19/2015" ,"Next

  18. ,"TX, RRC District 4 Onshore Lease Condensate Proved Reserves, Reserve Changes, and Production"

    Energy Information Administration (EIA) (indexed site)

    Lease Condensate Proved Reserves, Reserve Changes, and Production" ,"Click worksheet name or tab at bottom for data" ,"Worksheet Name","Description","# Of Series","Frequency","Latest Data for" ,"Data 1","TX, RRC District 4 Onshore Lease Condensate Proved Reserves, Reserve Changes, and Production",10,"Annual",2014,"6/30/1979" ,"Release Date:","11/19/2015" ,"Next

  19. ,"TX, RRC District 4 Onshore Nonassociated Natural Gas Proved Reserves, Wet After Lease Separation"

    Energy Information Administration (EIA) (indexed site)

    Nonassociated Natural Gas Proved Reserves, Wet After Lease Separation" ,"Click worksheet name or tab at bottom for data" ,"Worksheet Name","Description","# Of Series","Frequency","Latest Data for" ,"Data 1","TX, RRC District 4 Onshore Nonassociated Natural Gas Proved Reserves, Wet After Lease Separation",10,"Annual",2014,"6/30/1979" ,"Release Date:","11/19/2015"

  20. ,"TX, RRC District 4 Onshore Shale Gas Proved Reserves, Reserves Changes, and Production"

    Energy Information Administration (EIA) (indexed site)

    Shale Gas Proved Reserves, Reserves Changes, and Production" ,"Click worksheet name or tab at bottom for data" ,"Worksheet Name","Description","# Of Series","Frequency","Latest Data for" ,"Data 1","TX, RRC District 4 Onshore Shale Gas Proved Reserves, Reserves Changes, and Production",10,"Annual",2014,"6/30/2007" ,"Release Date:","11/19/2015" ,"Next Release

  1. ,"TX, RRC District 5 Associated-Dissolved Natural Gas Proved Reserves, Wet After Lease Separation"

    Energy Information Administration (EIA) (indexed site)

    Associated-Dissolved Natural Gas Proved Reserves, Wet After Lease Separation" ,"Click worksheet name or tab at bottom for data" ,"Worksheet Name","Description","# Of Series","Frequency","Latest Data for" ,"Data 1","TX, RRC District 5 Associated-Dissolved Natural Gas Proved Reserves, Wet After Lease Separation",10,"Annual",2014,"6/30/1979" ,"Release Date:","11/19/2015"

  2. ,"TX, RRC District 5 Nonassociated Natural Gas Proved Reserves, Wet After Lease Separation"

    Energy Information Administration (EIA) (indexed site)

    Nonassociated Natural Gas Proved Reserves, Wet After Lease Separation" ,"Click worksheet name or tab at bottom for data" ,"Worksheet Name","Description","# Of Series","Frequency","Latest Data for" ,"Data 1","TX, RRC District 5 Nonassociated Natural Gas Proved Reserves, Wet After Lease Separation",10,"Annual",2014,"6/30/1979" ,"Release Date:","11/19/2015" ,"Next

  3. ,"TX, RRC District 6 Associated-Dissolved Natural Gas Proved Reserves, Wet After Lease Separation"

    Energy Information Administration (EIA) (indexed site)

    Associated-Dissolved Natural Gas Proved Reserves, Wet After Lease Separation" ,"Click worksheet name or tab at bottom for data" ,"Worksheet Name","Description","# Of Series","Frequency","Latest Data for" ,"Data 1","TX, RRC District 6 Associated-Dissolved Natural Gas Proved Reserves, Wet After Lease Separation",10,"Annual",2014,"6/30/1979" ,"Release Date:","11/19/2015"

  4. ,"TX, RRC District 6 Nonassociated Natural Gas Proved Reserves, Wet After Lease Separation"

    Energy Information Administration (EIA) (indexed site)

    Nonassociated Natural Gas Proved Reserves, Wet After Lease Separation" ,"Click worksheet name or tab at bottom for data" ,"Worksheet Name","Description","# Of Series","Frequency","Latest Data for" ,"Data 1","TX, RRC District 6 Nonassociated Natural Gas Proved Reserves, Wet After Lease Separation",10,"Annual",2014,"6/30/1979" ,"Release Date:","11/19/2015" ,"Next

  5. ,"TX, RRC District 7B Associated-Dissolved Natural Gas Proved Reserves, Wet After Lease Separation"

    Energy Information Administration (EIA) (indexed site)

    Associated-Dissolved Natural Gas Proved Reserves, Wet After Lease Separation" ,"Click worksheet name or tab at bottom for data" ,"Worksheet Name","Description","# Of Series","Frequency","Latest Data for" ,"Data 1","TX, RRC District 7B Associated-Dissolved Natural Gas Proved Reserves, Wet After Lease Separation",10,"Annual",2014,"6/30/1979" ,"Release Date:","11/19/2015"

  6. ,"TX, RRC District 7B Lease Condensate Proved Reserves, Reserve Changes, and Production"

    Energy Information Administration (EIA) (indexed site)

    Lease Condensate Proved Reserves, Reserve Changes, and Production" ,"Click worksheet name or tab at bottom for data" ,"Worksheet Name","Description","# Of Series","Frequency","Latest Data for" ,"Data 1","TX, RRC District 7B Lease Condensate Proved Reserves, Reserve Changes, and Production",10,"Annual",2014,"6/30/1979" ,"Release Date:","11/19/2015" ,"Next Release

  7. ,"TX, RRC District 7B Nonassociated Natural Gas Proved Reserves, Wet After Lease Separation"

    Energy Information Administration (EIA) (indexed site)

    Nonassociated Natural Gas Proved Reserves, Wet After Lease Separation" ,"Click worksheet name or tab at bottom for data" ,"Worksheet Name","Description","# Of Series","Frequency","Latest Data for" ,"Data 1","TX, RRC District 7B Nonassociated Natural Gas Proved Reserves, Wet After Lease Separation",10,"Annual",2014,"6/30/1979" ,"Release Date:","11/19/2015" ,"Next

  8. ,"TX, RRC District 7B Shale Gas Proved Reserves, Reserves Changes, and Production"

    Energy Information Administration (EIA) (indexed site)

    Shale Gas Proved Reserves, Reserves Changes, and Production" ,"Click worksheet name or tab at bottom for data" ,"Worksheet Name","Description","# Of Series","Frequency","Latest Data for" ,"Data 1","TX, RRC District 7B Shale Gas Proved Reserves, Reserves Changes, and Production",10,"Annual",2014,"6/30/2007" ,"Release Date:","11/19/2015" ,"Next Release

  9. ,"TX, RRC District 7C Associated-Dissolved Natural Gas Proved Reserves, Wet After Lease Separation"

    Energy Information Administration (EIA) (indexed site)

    Associated-Dissolved Natural Gas Proved Reserves, Wet After Lease Separation" ,"Click worksheet name or tab at bottom for data" ,"Worksheet Name","Description","# Of Series","Frequency","Latest Data for" ,"Data 1","TX, RRC District 7C Associated-Dissolved Natural Gas Proved Reserves, Wet After Lease Separation",10,"Annual",2014,"6/30/1979" ,"Release Date:","11/19/2015"

  10. ,"TX, RRC District 7C Lease Condensate Proved Reserves, Reserve Changes, and Production"

    Energy Information Administration (EIA) (indexed site)

    Lease Condensate Proved Reserves, Reserve Changes, and Production" ,"Click worksheet name or tab at bottom for data" ,"Worksheet Name","Description","# Of Series","Frequency","Latest Data for" ,"Data 1","TX, RRC District 7C Lease Condensate Proved Reserves, Reserve Changes, and Production",10,"Annual",2014,"6/30/1979" ,"Release Date:","11/19/2015" ,"Next Release

  11. ,"TX, RRC District 7C Nonassociated Natural Gas Proved Reserves, Wet After Lease Separation"

    Energy Information Administration (EIA) (indexed site)

    Nonassociated Natural Gas Proved Reserves, Wet After Lease Separation" ,"Click worksheet name or tab at bottom for data" ,"Worksheet Name","Description","# Of Series","Frequency","Latest Data for" ,"Data 1","TX, RRC District 7C Nonassociated Natural Gas Proved Reserves, Wet After Lease Separation",10,"Annual",2014,"6/30/1979" ,"Release Date:","11/19/2015" ,"Next

  12. ,"TX, RRC District 7C Shale Gas Proved Reserves, Reserves Changes, and Production"

    Energy Information Administration (EIA) (indexed site)

    Shale Gas Proved Reserves, Reserves Changes, and Production" ,"Click worksheet name or tab at bottom for data" ,"Worksheet Name","Description","# Of Series","Frequency","Latest Data for" ,"Data 1","TX, RRC District 7C Shale Gas Proved Reserves, Reserves Changes, and Production",10,"Annual",2014,"6/30/2010" ,"Release Date:","11/19/2015" ,"Next Release

  13. ,"TX, RRC District 8 Associated-Dissolved Natural Gas Proved Reserves, Wet After Lease Separation"

    Energy Information Administration (EIA) (indexed site)

    Associated-Dissolved Natural Gas Proved Reserves, Wet After Lease Separation" ,"Click worksheet name or tab at bottom for data" ,"Worksheet Name","Description","# Of Series","Frequency","Latest Data for" ,"Data 1","TX, RRC District 8 Associated-Dissolved Natural Gas Proved Reserves, Wet After Lease Separation",10,"Annual",2014,"6/30/1979" ,"Release Date:","11/19/2015"

  14. ,"TX, RRC District 8 Nonassociated Natural Gas Proved Reserves, Wet After Lease Separation"

    Energy Information Administration (EIA) (indexed site)

    Nonassociated Natural Gas Proved Reserves, Wet After Lease Separation" ,"Click worksheet name or tab at bottom for data" ,"Worksheet Name","Description","# Of Series","Frequency","Latest Data for" ,"Data 1","TX, RRC District 8 Nonassociated Natural Gas Proved Reserves, Wet After Lease Separation",10,"Annual",2014,"6/30/1979" ,"Release Date:","11/19/2015" ,"Next

  15. ,"TX, RRC District 8A Associated-Dissolved Natural Gas Proved Reserves, Wet After Lease Separation"

    Energy Information Administration (EIA) (indexed site)

    Associated-Dissolved Natural Gas Proved Reserves, Wet After Lease Separation" ,"Click worksheet name or tab at bottom for data" ,"Worksheet Name","Description","# Of Series","Frequency","Latest Data for" ,"Data 1","TX, RRC District 8A Associated-Dissolved Natural Gas Proved Reserves, Wet After Lease Separation",10,"Annual",2014,"6/30/1979" ,"Release Date:","11/19/2015"

  16. ,"TX, RRC District 8A Lease Condensate Proved Reserves, Reserve Changes, and Production"

    Energy Information Administration (EIA) (indexed site)

    Lease Condensate Proved Reserves, Reserve Changes, and Production" ,"Click worksheet name or tab at bottom for data" ,"Worksheet Name","Description","# Of Series","Frequency","Latest Data for" ,"Data 1","TX, RRC District 8A Lease Condensate Proved Reserves, Reserve Changes, and Production",10,"Annual",2014,"6/30/1979" ,"Release Date:","11/19/2015" ,"Next Release

  17. ,"TX, RRC District 8A Nonassociated Natural Gas Proved Reserves, Wet After Lease Separation"

    Energy Information Administration (EIA) (indexed site)

    Nonassociated Natural Gas Proved Reserves, Wet After Lease Separation" ,"Click worksheet name or tab at bottom for data" ,"Worksheet Name","Description","# Of Series","Frequency","Latest Data for" ,"Data 1","TX, RRC District 8A Nonassociated Natural Gas Proved Reserves, Wet After Lease Separation",10,"Annual",2014,"6/30/1979" ,"Release Date:","11/19/2015" ,"Next

  18. ,"TX, RRC District 8A Shale Gas Proved Reserves, Reserves Changes, and Production"

    Energy Information Administration (EIA) (indexed site)

    Shale Gas Proved Reserves, Reserves Changes, and Production" ,"Click worksheet name or tab at bottom for data" ,"Worksheet Name","Description","# Of Series","Frequency","Latest Data for" ,"Data 1","TX, RRC District 8A Shale Gas Proved Reserves, Reserves Changes, and Production",10,"Annual",2014,"6/30/2012" ,"Release Date:","11/19/2015" ,"Next Release

  19. ,"TX, RRC District 9 Associated-Dissolved Natural Gas Proved Reserves, Wet After Lease Separation"

    Energy Information Administration (EIA) (indexed site)

    Associated-Dissolved Natural Gas Proved Reserves, Wet After Lease Separation" ,"Click worksheet name or tab at bottom for data" ,"Worksheet Name","Description","# Of Series","Frequency","Latest Data for" ,"Data 1","TX, RRC District 9 Associated-Dissolved Natural Gas Proved Reserves, Wet After Lease Separation",10,"Annual",2014,"6/30/1979" ,"Release Date:","11/19/2015"

  20. ,"TX, RRC District 9 Nonassociated Natural Gas Proved Reserves, Wet After Lease Separation"

    Energy Information Administration (EIA) (indexed site)

    Nonassociated Natural Gas Proved Reserves, Wet After Lease Separation" ,"Click worksheet name or tab at bottom for data" ,"Worksheet Name","Description","# Of Series","Frequency","Latest Data for" ,"Data 1","TX, RRC District 9 Nonassociated Natural Gas Proved Reserves, Wet After Lease Separation",10,"Annual",2014,"6/30/1979" ,"Release Date:","11/19/2015" ,"Next

  1. ,"TX, State Offshore Associated-Dissolved Natural Gas Proved Reserves, Wet After Lease Separation"

    Energy Information Administration (EIA) (indexed site)

    Associated-Dissolved Natural Gas Proved Reserves, Wet After Lease Separation" ,"Click worksheet name or tab at bottom for data" ,"Worksheet Name","Description","# Of Series","Frequency","Latest Data for" ,"Data 1","TX, State Offshore Associated-Dissolved Natural Gas Proved Reserves, Wet After Lease Separation",10,"Annual",2014,"6/30/1981" ,"Release Date:","11/19/2015"

  2. InGaAsN/GaAs heterojunction for multi-junction solar cells

    DOEpatents

    Kurtz, Steven R.; Allerman, Andrew A.; Klem, John F.; Jones, Eric D.

    2001-01-01

    An InGaAsN/GaAs semiconductor p-n heterojunction is disclosed for use in forming a 0.95-1.2 eV bandgap photodetector with application for use in high-efficiency multi-junction solar cells. The InGaAsN/GaAs p-n heterojunction is formed by epitaxially growing on a gallium arsenide (GaAs) or germanium (Ge) substrate an n-type indium gallium arsenide nitride (InGaAsN) layer having a semiconductor alloy composition In.sub.x Ga.sub.1-x As.sub.1-y N.sub.y with 0GaAs layer, with the InGaAsN and GaAs layers being lattice-matched to the substrate. The InGaAsN/GaAs p-n heterojunction can be epitaxially grown by either molecular beam epitaxy (MBE) or metalorganic chemical vapor deposition (MOCVD). The InGaAsN/GaAs p-n heterojunction provides a high open-circuit voltage of up to 0.62 volts and an internal quantum efficiency of >70%.

  3. Freeport, Maine: Energy Resources | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    County, Maine.1 References US Census Bureau Incorporated place and minor civil division population dataset (All States, all geography) Retrieved from "http:...

  4. Magnetism and transport properties of epitaxial Fe-Ga thin films on GaAs(001)

    SciTech Connect

    Duong Anh Tuan; Shin, Yooleemi; Cho, Sunglae; Dang Duc Dung; Vo Thanh Son

    2012-04-01

    Epitaxial Fe-Ga thin films in disordered bcc {alpha}-Fe crystal structure (A2) have been grown on GaAs(001) by molecular beam epitaxy. The saturated magnetization (M{sub S}) decreased from 1371 to 1105 kA/m with increasing Ga concentration from 10.5 to 24.3 % at room temperature. The lattice parameter increased with the increase in Ga content because of the larger atomic radius of Ga atom than that of Fe. The increase in carrier density with Ga content caused in lower resistivity.

  5. Graphene induced remote surface scattering in graphene/AlGaN/GaN heterostructures

    SciTech Connect

    Liu, Xiwen; Li, Dan; Wang, Bobo; Liu, Bin; Chen, Famin; Jin, Guangri; Lu, Yanwu

    2014-10-20

    The mobilities of single-layer graphene combined with AlGaN/GaN heterostructures on two-dimensional electron gases in graphene/AlGaN/GaN double heterojunction are calculated. The impact of electron density in single-layer graphene is also studied. Remote surface roughness (RSR) and remote interfacial charge (RIC) scatterings are introduced into this heterostructure. The mobilities limited by RSR and RIC are an order of magnitude higher than that of interface roughness and misfit dislocation. This study contributes to designing structures for generation of higher electron mobility in graphene/AlGaN/GaN double heterojunction.

  6. U.S. Liquefied Natural Gas Imports by Point of Entry

    Energy Information Administration (EIA) (indexed site)

    8,568 4,767 5,200 7,638 5,773 8,082 1997-2016 From Canada 65 74 113 118 70 84 2013-2016 Portal, ND 2015-2015 Champlain, NY 20 20 3 4 3 4 2014-2016 Sumas, WA 1 2 3 4 2014-2016 Highgate Springs, VT 43 55 110 112 64 77 2013-2016 From Algeria 0 0 0 0 0 0 1973-2016 From Australia 0 0 0 0 0 0 1973-2016 From Brunei 0 0 0 0 0 0 2001-2016 From Egypt 0 0 0 0 0 0 2005-2016 Cameron, LA 2011-2011 Elba Island, GA 2011-2012 Freeport, TX 2011-2011 Gulf LNG, MS 2011-2011 From Equatorial Guinea 0 0 0 0 0 0

  7. SURFACE GEOPHYSICAL EXPLORATION OF TX-TY TANK FARMS AT THE HANFORD SITE RESULTS OF BACKGROUND CHARACTERIZATION WITH GROUND PENETRATING RADAR

    SciTech Connect

    MYERS DA; CUBBAGE R; BRAUCHLA R; O'BRIEN G

    2008-07-24

    Ground penetrating radar surveys of the TX and TY tank farms were performed to identify existing infrastructure in the near surface environment. These surveys were designed to provide background information supporting Surface-to-Surface and Well-to-Well resistivity surveys of Waste Management Area TX-TY. The objective of the preliminary investigation was to collect background characterization information with GPR to understand the spatial distribution of metallic objects that could potentially interfere with the results from high resolution resistivity{trademark} surveys. The results of the background characterization confirm the existence of documented infrastructure, as well as highlight locations of possible additional undocumented subsurface metallic objects.

  8. Band Structure of Strain-Balanced GaAsBi/GaAsN Super-lattices on GaAs

    SciTech Connect

    Hwang, J.; Phillips, J. D.

    2011-05-31

    GaAs alloys with dilute content of Bi and N provide a large reduction in band-gap energy with increasing alloy composition. GaAsBi/GaAsN heterojunctions have a type-II band alignment, where superlattices based on these materials offer a wide range for designing effective band-gap energy by varying superlattice period and alloy composition. The miniband structure and effective band gap for strain-balanced GaAsBi/GaAsN superlattices with effective lattice match to GaAs are calculated for alloy compositions up to 5% Bi and N using the kp method. The effective band gap for these superlattices is found to vary between 0.89 and 1.32 eV for period thickness ranging from 10 to 100 . The joint density of states and optical absorption of a 40/40 GaAs0.96Bi0.04/GaAs0.98N0.02 superlattice are reported demonstrating a ground-state transition at 1.005 eV and first excited transition at 1.074 eV. The joint density of states is similar in magnitude to GaAs, while the optical absorption is approximately one order of magnitude lower due to the spatially indirect optical transition in the type-II structure. The GaAsBi/GaAsN system may provide a new material system with lattice match to GaAs in a spectral range of high importance for optoelectronic devices including solar cells, photodetectors, and light emitters.

  9. Optical and magnetotransport properties of InGaAs/GaAsSb/GaAs structures doped with a magnetic impurity

    SciTech Connect

    Kalentyeva, I. L. Zvonkov, B. N.; Vikhrova, O. V.; Danilov, Yu. A.; Demina, P. B.; Dorokhin, M. V.; Zdoroveyshchev, A. V.

    2015-11-15

    InGaAs/GaAsSb/GaAs bilayer quantum-well structures containing a magnetic-impurity δ-layer (Mn) at the GaAs/InGaAs interface are experimentally studied for the first time. The structures are fabricated by metal organic chemical-vapor deposition (MOCVD) and laser deposition on substrates of conducting (n{sup +}) and semi-insulating GaAs in a single growth cycle. The InGaAs-layer thickness is varied from 1.5 to 5 nm. The significant effect of a decrease in the InGaAs quantum-well thickness on the optical and magnetotransport properties of the structures under study is detected. Nonlinear magnetic-field dependence of the Hall resistance and negative magnetoresistance at temperatures of ≤30–40 K, circular polarization of the electroluminescence in a magnetic field, opposite behaviors of the photoluminescence and electroluminescence emission intensities in the structures, and an increase in the contribution of indirect transitions with decreasing InGaAs thickness are observed. Simulation shows that these effects can be caused by the influence of the δ-layer of acceptor impurity (Mn) on the band structure and the hole concentration distribution in the bilayer quantum well.

  10. AlGaAsSb/GaSb Distributed Bragg Reflectors Grown by Organometallic Vapor Phase Epitaxy

    SciTech Connect

    C.A. Wang; C.J. Vineis; D.R. Calawa

    2002-02-13

    The first AlGaAsSb/GaSb quarter-wave distributed Bragg reflectors grown by metallic vapor phase epitaxy are reported. The peak reflectance is 96% for a 10-period structure.

  11. Degradation mechanisms of 2 MeV proton irradiated AlGaN/GaN HEMTs...

    Office of Scientific and Technical Information (OSTI)

    irradiated AlGaNGaN HEMTs This content will become publicly available on August 26, 2016 Title: Degradation mechanisms of 2 MeV proton irradiated AlGaNGaN HEMTs Authors: ...

  12. (In,Ga)As/GaP electrical injection quantum dot laser

    SciTech Connect

    Heidemann, M. Höfling, S.; Kamp, M.

    2014-01-06

    The paper reports on the realization of multilayer (In,Ga)As/GaP quantum dot (QD) lasers grown by gas source molecular beam epitaxy. The QDs have been embedded in (Al,Ga)P/GaP waveguide structures. Laser operation at 710 nm is obtained for broad area laser devices with a threshold current density of 4.4 kA/cm{sup 2} at a heat-sink temperature of 80 K.

  13. US SoAtl GA Site Consumption

    Energy Information Administration (EIA) (indexed site)

    GA Site Consumption million Btu $0 $500 $1,000 $1,500 $2,000 $2,500 US SoAtl GA Expenditures dollars ALL ENERGY average per household (excl. transportation) 0 4,000 8,000 12,000 16,000 US SoAtl GA Site Consumption kilowatthours $0 $300 $600 $900 $1,200 $1,500 $1,800 US SoAtl GA Expenditures dollars ELECTRICITY ONLY average per household * Site energy consumption (89.5 million Btu) and energy expenditures per household ($2,067) in Georgia are similar to the U.S. household averages. * Per

  14. GaInP/GaAs/GaInAs Monolithic Tandem Cells for High-Performance Solar Concentrators

    SciTech Connect

    Wanlass, M. W.; Ahrenkiel, S. P.; Albin, D. S.; Carapella, J. J.; Duda, A.; Emery, K.; Geisz, J. F.; Jones, K.; Kurtz, S.; Moriarty, T.; Romero, M. J.

    2005-08-01

    We present a new approach for ultra-high-performance tandem solar cells that involves inverted epitaxial growth and ultra-thin device processing. The additional degree of freedom afforded by the inverted design allows the monolithic integration of high-, and medium-bandgap, lattice-matched (LM) subcell materials with lower-bandgap, lattice-mismatched (LMM) materials in a tandem structure through the use of transparent compositionally graded layers. The current work concerns an inverted, series-connected, triple-bandgap, GaInP (LM, 1.87 eV)/GaAs (LM, 1.42 eV)/GaInAs (LMM, {approx}1 eV) device structure grown on a GaAs substrate. Ultra-thin tandem devices are fabricated by mounting the epiwafers to pre-metallized Si wafer handles and selectively removing the parent GaAs substrate. The resulting handle-mounted, ultra-thin tandem cells have a number of important advantages, including improved performance and potential reclamation/reuse of the parent substrate for epitaxial growth. Additionally, realistic performance modeling calculations suggest that terrestrial concentrator efficiencies in the range of 40-45% are possible with this new tandem cell approach. A laboratory-scale (0.24 cm2), prototype GaInP/GaAs/GaInAs tandem cell with a terrestrial concentrator efficiency of 37.9% at a low concentration ratio (10.1 suns) is described, which surpasses the previous world efficiency record of 37.3%.

  15. EIS-0476: Vogtle Electric Generating Plant in Burke County, GA...

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    6: Vogtle Electric Generating Plant in Burke County, GA EIS-0476: Vogtle Electric Generating Plant in Burke County, GA EIS-0476: Final Environmental Impact Statement EIS-0476: ...

  16. Alternating magnetic anisotropy of Li2(Li1xTx)N(T=Mn,Fe,Co,andNi)

    DOE PAGES [OSTI]

    Jesche, A.; Ke, L.; Jacobs, J. L.; Harmon, B.; Houk, R. S.; Canfield, P. C.

    2015-05-11

    Substantial amounts of the transition metals Mn, Fe, Co, and Ni can be substituted for Li in single crystalline Li2(Li1xTx)N. Isothermal and temperature-dependent magnetization measurements reveal local magnetic moments with magnitudes significantly exceeding the spin-only value. The additional contributions stem from unquenched orbital moments that lead to rare-earth-like behavior of the magnetic properties. Accordingly, extremely large magnetic anisotropies have been found. Most notably, the magnetic anisotropy alternates as easy plane?easy axis?easy plane?easy axis when progressing from T = Mn ? Fe ? Co ? Ni. This behavior can be understood based on a perturbation approach in an analytical, single-ion model.moreAs a result, the calculated magnetic anisotropies show surprisingly good agreement with the experiment and capture the basic features observed for the different transition metals.less

  17. Alternating magnetic anisotropy of Li2(Li1–xTx)N (T = Mn, Fe, Co, and Ni)

    DOE PAGES [OSTI]

    Jesche, A.; Ke, L.; Jacobs, J. L.; Harmon, B.; Houk, R. S.; Canfield, P. C.

    2015-05-11

    Substantial amounts of the transition metals Mn, Fe, Co, and Ni can be substituted for Li in single crystalline Li2(Li1–xTx)N. Isothermal and temperature-dependent magnetization measurements reveal local magnetic moments with magnitudes significantly exceeding the spin-only value. The additional contributions stem from unquenched orbital moments that lead to rare-earth-like behavior of the magnetic properties. Accordingly, extremely large magnetic anisotropies have been found. Most notably, the magnetic anisotropy alternates as easy plane→easy axis→easy plane→easy axis when progressing from T = Mn → Fe → Co → Ni. This behavior can be understood based on a perturbation approach in an analytical, single-ion model.more » As a result, the calculated magnetic anisotropies show surprisingly good agreement with the experiment and capture the basic features observed for the different transition metals.« less

  18. A hole modulator for InGaN/GaN light-emitting diodes

    SciTech Connect

    Zhang, Zi-Hui; Kyaw, Zabu; Liu, Wei; Ji, Yun; Wang, Liancheng; Tan, Swee Tiam; Sun, Xiao Wei E-mail: VOLKAN@stanfordalumni.org; Demir, Hilmi Volkan E-mail: VOLKAN@stanfordalumni.org

    2015-02-09

    The low p-type doping efficiency of the p-GaN layer has severely limited the performance of InGaN/GaN light-emitting diodes (LEDs) due to the ineffective hole injection into the InGaN/GaN multiple quantum well (MQW) active region. The essence of improving the hole injection efficiency is to increase the hole concentration in the p-GaN layer. Therefore, in this work, we have proposed a hole modulator and studied it both theoretically and experimentally. In the hole modulator, the holes in a remote p-type doped layer are depleted by the built-in electric field and stored in the p-GaN layer. By this means, the overall hole concentration in the p-GaN layer can be enhanced. Furthermore, the hole modulator is adopted in the InGaN/GaN LEDs, which reduces the effective valance band barrier height for the p-type electron blocking layer from ?332?meV to ?294?meV at 80?A/cm{sup 2} and demonstrates an improved optical performance, thanks to the increased hole concentration in the p-GaN layer and thus the improved hole injection into the MQWs.

  19. AlGaN/GaN heterostructure prepared on a Si (110) substrate via pulsed sputtering

    SciTech Connect

    Watanabe, T.; Ohta, J.; Kondo, T.; Ohashi, M.; Ueno, K.; Kobayashi, A.; Fujioka, H.

    2014-05-05

    GaN films were grown on Si (110) substrates using a low-temperature growth technique based on pulsed sputtering. Reduction of the growth temperature suppressed the strain in the GaN films, leading to an increase in the critical thickness for crack formation. In addition, an AlGaN/GaN heterostructure with a flat heterointerface was prepared using this technique. Furthermore, the existence of a two dimensional electron gas at the heterointerface with a mobility of 1360 cm{sup 2}/Vs and a sheet carrier density of 1.3??10{sup 13}?cm{sup ?2} was confirmed. Finally, the use of the AlGaN/GaN heterostructure in a high electron mobility transistor was demonstrated. These results indicate that low-temperature growth via pulsed sputtering is quite promising for the fabrication of GaN-based electronic devices.

  20. Metal-interconnection-free integration of InGaN/GaN light emitting diodes with AlGaN/GaN high electron mobility transistors

    SciTech Connect

    Liu, Chao; Cai, Yuefei; Liu, Zhaojun; Ma, Jun; Lau, Kei May

    2015-05-04

    We report a metal-interconnection-free integration scheme for InGaN/GaN light emitting diodes (LEDs) and AlGaN/GaN high electron mobility transistors (HEMTs) by combining selective epi removal (SER) and selective epitaxial growth (SEG) techniques. SER of HEMT epi was carried out first to expose the bottom unintentionally doped GaN buffer and the sidewall GaN channel. A LED structure was regrown in the SER region with the bottom n-type GaN layer (n-electrode of the LED) connected to the HEMTs laterally, enabling monolithic integration of the HEMTs and LEDs (HEMT-LED) without metal-interconnection. In addition to saving substrate real estate, minimal interface resistance between the regrown n-type GaN and the HEMT channel is a significant improvement over metal-interconnection. Furthermore, excellent off-state leakage characteristics of the driving transistor can also be guaranteed in such an integration scheme.

  1. Carrier quenching in InGaP/GaAs double heterostructures

    SciTech Connect

    Wells, Nathan P. Driskell, Travis U.; Hudson, Andrew I.; LaLumondiere, Stephen D.; Lotshaw, William T.; Forbes, David V.; Hubbard, Seth M.

    2015-08-14

    Photoluminescence measurements on a series of GaAs double heterostructures demonstrate a rapid quenching of carriers in the GaAs layer at irradiance levels below 0.1 W/cm{sup 2} in samples with a GaAs-on-InGaP interface. These results indicate the existence of non-radiative defect centers at or near the GaAs-on-InGaP interface, consistent with previous reports showing the intermixing of In and P when free As impinges on the InGaP surface during growth. At low irradiance, these defect centers can lead to sub-ns carrier lifetimes. The defect centers involved in the rapid carrier quenching can be saturated at higher irradiance levels and allow carrier lifetimes to reach hundreds of nanoseconds. To our knowledge, this is the first report of a nearly three orders of magnitude decrease in carrier lifetime at low irradiance in a simple double heterostructure. Carrier quenching occurs at irradiance levels near the integrated Air Mass Zero (AM0) and Air Mass 1.5 (AM1.5) solar irradiance. Additionally, a lower energy photoluminescence band is observed both at room and cryogenic temperatures. The temperature and time dependence of the lower energy luminescence is consistent with the presence of an unintentional InGaAs or InGaAsP quantum well that forms due to compositional mixing at the GaAs-on-InGaP interface. Our results are of general interest to the photovoltaic community as InGaP is commonly used as a window layer in GaAs based solar cells.

  2. Accelerated aging of GaAs concentrator solar cells

    SciTech Connect

    Gregory, P.E.

    1982-04-01

    An accelerated aging study of AlGaAs/GaAs solar cells has been completed. The purpose of the study was to identify the possible degradation mechanisms of AlGaAs/GaAs solar cells in terrestrial applications. Thermal storage tests and accelerated AlGaAs corrosion studies were performed to provide an experimental basis for a statistical analysis of the estimated lifetime. Results of this study suggest that a properly designed and fabricated AlGaAs/GaAs solar cell can be mechanically rugged and environmentally stable with projected lifetimes exceeding 100 years.

  3. Synthesis, morphology and optical properties of GaN and AlGaN semiconductor nanostructures

    SciTech Connect

    Kuppulingam, B. Singh, Shubra Baskar, K.

    2014-04-24

    Hexagonal Gallium Nitride (GaN) and Aluminum Gallium Nitride (AlGaN) nanoparticles were synthesized by sol-gel method using Ethylene Diamine Tetra Acetic acid (EDTA) complex route. Powder X-ray diffraction (PXRD) analysis confirms the hexagonal wurtzite structure of GaN and Al{sub 0.25}Ga{sub 0.75}N nanoparticles. Surface morphology and elemental analysis were carried out by Scanning Electron Microscope (SEM) and Energy Dispersive X-ray spectroscopy (EDX). The room temperature Photoluminescence (PL) study shows the near band edge emission for GaN at 3.35 eV and at 3.59 eV for AlGaN nanoparticles. The Aluminum (Al) composition of 20% has been obtained from PL emission around 345 nm.

  4. Zinc blende GaAs films grown on wurtzite GaN/sapphire templates

    SciTech Connect

    Chaldyshev, V.V.; Nielsen, B.; Mendez, E.E.; Musikhin, Yu.G.; Bert, N.A.; Ma, Zh.; Holden, Todd

    2005-03-28

    1-{mu}m-thick zinc-blende GaAs (111) films were grown by molecular-beam epitaxy on wurtzite GaN/sapphire (0001) templates. In spite of a {approx}20% lattice mismatch, epitaxial growth was realized, so that the GaAs films showed good adhesion and their surface had a larger mirror-like area with an average surface roughness of 10 nm. Transmission electron microscopy revealed a flat and abrupt epitaxial GaAs/GaN interface with some nanocavities and a large number of dislocations. Reasonably good crystalline quality of the GaAs films was confirmed by Raman characterization. Spectroscopic ellipsometry showed sharp interference fringes and characteristic parameters in the range of 0.75-5.3 eV. Photoluminescence study revealed extended band tails and dominance of non-radiative carrier recombination.

  5. High-performance InGaP/GaAs pnp {delta}-doped heterojunction bipolar transistor

    SciTech Connect

    Tsai, J.-H. Chiu, S.-Y.; Lour, W.-S.; Guo, D.-F.

    2009-07-15

    In this article, a novel InGaP/GaAs pnp {delta}-doped heterojunction bipolar transistor is first demonstrated. Though the valence band discontinuity at InGaP/GaAs heterojunction is relatively large, the addition of a {delta}-doped sheet between two spacer layers at the emitter-base (E-B) junction effectively eliminates the potential spike and increases the confined barrier for electrons, simultaneously. Experimentally, a high current gain of 25 and a relatively low E-B offset voltage of 60 mV are achieved. The offset voltage is much smaller than the conventional InGaP/GaAs pnp HBT. The proposed device could be used for linear amplifiers and low-power complementary integrated circuit applications.

  6. Oxidation of ultrathin GaSe

    SciTech Connect

    Thomas Edwin Beechem; McDonald, Anthony E.; Ohta, Taisuke; Howell, Stephen W.; Kalugin, Nikolai G.; Kowalski, Brian M.; Brumbach, Michael T.; Spataru, Catalin D.; Pask, Jesse A.

    2015-10-26

    Oxidation of exfoliated gallium selenide (GaSe) is investigated through Raman, photoluminescence, Auger, and X-ray photoelectron spectroscopies. Photoluminescence and Raman intensity reductions associated with spectral features of GaSe are shown to coincide with the emergence of signatures emanating from the by-products of the oxidation reaction, namely, Ga2Se3 and amorphous Se. Furthermore, photoinduced oxidation is initiated over a portion of a flake highlighting the potential for laser based patterning of two-dimensional heterostructures via selective oxidation.

  7. Oxidation of ultrathin GaSe

    DOE PAGES [OSTI]

    Thomas Edwin Beechem; McDonald, Anthony E.; Ohta, Taisuke; Howell, Stephen W.; Kalugin, Nikolai G.; Kowalski, Brian M.; Brumbach, Michael T.; Spataru, Catalin D.; Pask, Jesse A.

    2015-10-26

    Oxidation of exfoliated gallium selenide (GaSe) is investigated through Raman, photoluminescence, Auger, and X-ray photoelectron spectroscopies. Photoluminescence and Raman intensity reductions associated with spectral features of GaSe are shown to coincide with the emergence of signatures emanating from the by-products of the oxidation reaction, namely, Ga2Se3 and amorphous Se. Furthermore, photoinduced oxidation is initiated over a portion of a flake highlighting the potential for laser based patterning of two-dimensional heterostructures via selective oxidation.

  8. Highly uniform, multi-stacked InGaAs/GaAs quantum dots embedded in a GaAs nanowire

    SciTech Connect

    Tatebayashi, J. Ota, Y.; Ishida, S.; Nishioka, M.; Iwamoto, S.; Arakawa, Y.

    2014-09-08

    We demonstrate a highly uniform, dense stack of In{sub 0.22}Ga{sub 0.78}As/GaAs quantum dot (QD) structures in a single GaAs nanowire (NW). The size (and hence emission energy) of individual QD is tuned by careful control of the growth conditions based on a diffusion model of morphological evolution of NWs and optical characterization. By carefully tailoring the emission energies of individual QD, dot-to-dot inhomogeneous broadening of QD stacks in a single NW can be as narrow as 9.3?meV. This method provides huge advantages over traditional QD stack using a strain-induced Stranski-Krastanow growth scheme. We show that it is possible to fabricate up to 200 uniform QDs in single GaAs NWs using this growth technique without degradation of the photoluminescence intensity.

  9. Simplified 2DEG carrier concentration model for composite barrier AlGaN/GaN HEMT

    SciTech Connect

    Das, Palash Biswas, Dhrubes

    2014-04-24

    The self consistent solution of Schrodinger and Poisson equations is used along with the total charge depletion model and applied with a novel approach of composite AlGaN barrier based HEMT heterostructure. The solution leaded to a completely new analytical model for Fermi energy level vs. 2DEG carrier concentration. This was eventually used to demonstrate a new analytical model for the temperature dependent 2DEG carrier concentration in AlGaN/GaN HEMT.

  10. Ultra-high frequency photoconductivity decay in GaAs/Ge/GaAs double heterostructure grown by molecular beam epitaxy

    SciTech Connect

    Hudait, M. K.; Zhu, Y.; Johnston, S. W.; Maurya, D.; Priya, S.; Umbel, R.

    2013-03-04

    GaAs/Ge/GaAs double heterostructures (DHs) were grown in-situ using two separate molecular beam epitaxy chambers. High-resolution x-ray rocking curve demonstrates a high-quality GaAs/Ge/GaAs heterostructure by observing Pendelloesung oscillations. The kinetics of the carrier recombination in Ge/GaAs DHs were investigated using photoconductivity decay measurements by the incidence excitation from the front and back side of 15 nm GaAs/100 nm Ge/0.5 {mu}m GaAs/(100)GaAs substrate structure. High-minority carrier lifetimes of 1.06-1.17 {mu}s were measured when excited from the front or from the back of the Ge epitaxial layer, suggests equivalent interface quality of GaAs/Ge and Ge/GaAs. Wavelength-dependent minority carrier recombination properties are explained by the wavelength-dependent absorption coefficient of Ge.

  11. Magnetic coupling in ferromagnetic semiconductor (Ga,Mn)As/(Al,Ga,Mn)As bilayers

    SciTech Connect

    Wang, M.; Wadley, P.; Campion, R. P.; Rushforth, A. W.; Edmonds, K. W.; Gallagher, B. L.; Charlton, T. R.; Kinane, C. J.; Langridge, S.

    2015-08-07

    We report on a study of ferromagnetic semiconductor (Ga,Mn)As/(Al,Ga,Mn)As bilayers using magnetometry and polarized neutron reflectivity (PNR). From depth-resolved characterization of the magnetic structure obtained by PNR, we concluded that the (Ga,Mn)As and (Al,Ga,Mn)As layers have in-plane and perpendicular-to-plane magnetic easy axes, respectively, with weak interlayer coupling. Therefore, the layer magnetizations align perpendicular to each other under low magnetic fields and parallel at high fields.

  12. US SoAtl GA Site Consumption

    Annual Energy Outlook

    ... Yes Yes No No 0% 20% 40% 60% 80% 100% US GA No Car CAR IS PARKED WITHIN 20 FT OF ELECTRICAL OUTLET More highlights from RECS on housing characteristics and energy-related ...

  13. Princeton Plasma Physics Lab - General Atomics (GA)

    U.S. Department of Energy (DOE) - all webpages (Extended Search)

    general-atomics-ga General Atomics en The Scorpion's Strategy: "Catch and Subdue" http:www.pppl.govnode1132

  14. U.S. Total Exports

    Energy Information Administration (EIA) (indexed site)

    Total To Barbados Total To Brazil Freeport, TX Sabine Pass, LA Total to Canada Eastport, ID Calais, ME Detroit, MI Marysville, MI Port Huron, MI Crosby, ND Portal, ND Sault St. Marie, MI St. Clair, MI Noyes, MN Warroad, MN Babb, MT Havre, MT Port of Morgan, MT Sherwood, ND Pittsburg, NH Buffalo, NY Grand Island, NY Massena, NY Niagara Falls, NY Waddington, NY Sumas, WA Sweetgrass, MT Total to Chile Sabine Pass, LA Total to China Kenai, AK Sabine Pass, LA Total to Egypt Freeport, TX Total to

  15. GaTe semiconductor for radiation detection

    DOEpatents

    Payne, Stephen A.; Burger, Arnold; Mandal, Krishna C.

    2009-06-23

    GaTe semiconductor is used as a room-temperature radiation detector. GaTe has useful properties for radiation detectors: ideal bandgap, favorable mobilities, low melting point (no evaporation), non-hygroscopic nature, and availability of high-purity starting materials. The detector can be used, e.g., for detection of illicit nuclear weapons and radiological dispersed devices at ports of entry, in cities, and off shore and for determination of medical isotopes present in a patient.

  16. GaP ring-like nanostructures on GaAs (100) with In{sub 0.15}Ga{sub 0.85}As compensation layers

    SciTech Connect

    Prongjit, Patchareewan Pankaow, Naraporn Boonpeng, Poonyasiri Thainoi, Supachok Panyakeow, Somsak Ratanathammaphan, Somchai

    2013-12-04

    We present the fabrication of GaP ring-like nanostructures on GaAs (100) substrates with inserted In{sub 0.15}Ga{sub 0.85}As compensation layers. The samples are grown by droplet epitaxy using solid-source molecular beam epitaxy. The dependency of nanostructural and optical properties of GaP nanostructures on In{sub 0.15}Ga{sub 0.85}As layer thickness is investigated by ex-situ atomic force microscope (AFM) and photoluminescence (PL). It is found that the characteristics of GaP ring-like structures on GaAs strongly depend on the In{sub 0.15}Ga{sub 0.85}As layer thickness.

  17. Lattice-matched epitaxial GaInAsSb/GaSb thermophotovoltaic devices

    SciTech Connect

    Wang, C.A.; Choi, H.K.; Turner, G.W.; Spears, D.L.; Manfra, M.J.; Charache, G.W.

    1997-05-01

    The materials development of Ga{sub 1{minus}x}In{sub x}As{sub y}Sb{sub 1{minus}y} alloys for lattice-matched thermophotovoltaic (TPV) devices is reported. Epilayers with cutoff wavelength 2--2.4 {micro}m at room temperature and lattice-matched to GaSb substrates were grown by both low-pressure organometallic vapor phase epitaxy and molecular beam epitaxy. These layers exhibit high optical and structural quality. For demonstrating lattice-matched thermophotovoltaic devices, p- and n-type doping studies were performed. Several TPV device structures were investigated, with variations in the base/emitter thicknesses and the incorporation of a high bandgap GaSb or AlGaAsSb window layer. Significant improvement in the external quantum efficiency is observed for devices with an AlGaAsSb window layer compared to those without one.

  18. Green cubic GaInN/GaN light-emitting diode on microstructured silicon (100)

    SciTech Connect

    Stark, Christoph J. M.; Detchprohm, Theeradetch; Wetzel, Christian, E-mail: wetzel@ieee.org [Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States) [Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States); Future Chips Constellation, Rensselaer Polytechnic Institute, 110 8th Street, Troy, New York 12180 (United States); Lee, S. C.; Brueck, S. R. J. [Department of Electrical and Computer Engineering and Center for High Technology Materials, University of New Mexico, 1313 Goddard SE, Albuquerque, New Mexico 87106 (United States)] [Department of Electrical and Computer Engineering and Center for High Technology Materials, University of New Mexico, 1313 Goddard SE, Albuquerque, New Mexico 87106 (United States); Jiang, Y.-B. [Department of Earth and Planetary Science, University of New Mexico, Albuquerque, New Mexico 87131 (United States)] [Department of Earth and Planetary Science, University of New Mexico, Albuquerque, New Mexico 87131 (United States)

    2013-12-02

    GaInN/GaN light-emitting diodes free of piezoelectric polarization were prepared on standard electronic-grade Si(100) substrates. Micro-stripes of GaN and GaInN/GaN quantum wells in the cubic crystal structure were grown on intersecting (111) planes of microscale V-grooved Si in metal-organic vapor phase epitaxy, covering over 50% of the wafer surface area. Crystal phases were identified in electron back-scattering diffraction. A cross-sectional analysis reveals a cubic structure virtually free of line defects. Electroluminescence over 20 to 100??A is found fixed at 487?nm (peak), 516?nm (dominant). Such structures therefore should allow higher efficiency, wavelength-stable light emitters throughout the visible spectrum.

  19. Enhanced thermoelectric transport in modulation-doped GaN/AlGaN core/shell nanowires

    DOE PAGES [OSTI]

    Song, Erdong; Li, Qiming; Swartzentruber, Brian; Pan, Wei; Wang, George T.; Martinez, Julio A.

    2015-11-25

    The thermoelectric properties of unintentionally n-doped core GaN/AlGaN core/shell N-face nanowires are reported. We found that the temperature dependence of the electrical conductivity is consistent with thermally activated carriers with two distinctive donor energies. The Seebeck coefficient of GaN/AlGaN nanowires is more than twice as large as that for the GaN nanowires alone. However, an outer layer of GaN deposited onto the GaN/AlGaN core/shell nanowires decreases the Seebeck coefficient at room temperature, while the temperature dependence of the electrical conductivity remains the same. We attribute these observations to the formation of an electron gas channel within the heavily-doped GaN coremore » of the GaN/AlGaN nanowires. The room-temperature thermoelectric power factor for the GaN/AlGaN nanowires can be four times higher than the GaN nanowires. As a result, selective doping in bandgap engineered core/shell nanowires is proposed for enhancing the thermoelectric power.« less

  20. Enhanced thermoelectric transport in modulation-doped GaN/AlGaN core/shell nanowires

    SciTech Connect

    Song, Erdong; Li, Qiming; Swartzentruber, Brian; Pan, Wei; Wang, George T.; Martinez, Julio A.

    2015-11-25

    The thermoelectric properties of unintentionally n-doped core GaN/AlGaN core/shell N-face nanowires are reported. We found that the temperature dependence of the electrical conductivity is consistent with thermally activated carriers with two distinctive donor energies. The Seebeck coefficient of GaN/AlGaN nanowires is more than twice as large as that for the GaN nanowires alone. However, an outer layer of GaN deposited onto the GaN/AlGaN core/shell nanowires decreases the Seebeck coefficient at room temperature, while the temperature dependence of the electrical conductivity remains the same. We attribute these observations to the formation of an electron gas channel within the heavily-doped GaN core of the GaN/AlGaN nanowires. The room-temperature thermoelectric power factor for the GaN/AlGaN nanowires can be four times higher than the GaN nanowires. As a result, selective doping in bandgap engineered core/shell nanowires is proposed for enhancing the thermoelectric power.

  1. InGaN/GaN tunnel junctions for hole injection in GaN light emitting diodes

    SciTech Connect

    Krishnamoorthy, Sriram E-mail: rajan@ece.osu.edu; Akyol, Fatih; Rajan, Siddharth E-mail: rajan@ece.osu.edu

    2014-10-06

    InGaN/GaN tunnel junction contacts were grown using plasma assisted molecular beam epitaxy (MBE) on top of a metal-organic chemical vapor deposition (MOCVD)-grown InGaN/GaN blue (450 nm) light emitting diode. A voltage drop of 5.3 V at 100 mA, forward resistance of 2 × 10{sup −2} Ω cm{sup 2}, and a higher light output power compared to the reference light emitting diodes (LED) with semi-transparent p-contacts were measured in the tunnel junction LED (TJLED). A forward resistance of 5 × 10{sup −4} Ω cm{sup 2} was measured in a GaN PN junction with the identical tunnel junction contact as the TJLED, grown completely by MBE. The depletion region due to the impurities at the regrowth interface between the MBE tunnel junction and the MOCVD-grown LED was hence found to limit the forward resistance measured in the TJLED.

  2. Structural and optical properties of InGaN--GaN nanowire heterostructures grown by molecular beam epitaxy

    SciTech Connect

    Limbach, F.; Gotschke, T.; Stoica, T.; Calarco, R.; Sutter, E.; Ciston, J.; Cusco, R.; Artus, L.; Kremling, S.; Hofling, S.; Worschech, L.; Grutzmacher, D.

    2011-01-01

    InGaN/GaN nanowire (NW) heterostructures grown by plasma assisted molecular beam epitaxy were studied in comparison to their GaN and InGaN counterparts. The InGaN/GaN heterostructure NWs are composed of a GaN NW, a thin InGaN shell, and a multifaceted InGaN cap wrapping the top part of the GaN NW. High-resolution transmission electron microscopy (HRTEM) images taken from different parts of a InGaN/GaN NW show a wurtzite structure of the GaN core and the epitaxial InGaN shell around it, while additional crystallographic domains are observed whithin the InGaN cap region. Large changes in the lattice parameter along the wire, from pure GaN to higher In concentration demonstrate the successful growth of a complex InGaN/GaN NW heterostructure. Photoluminescence (PL) spectra of these heterostructure NW ensembles show rather broad and intense emission peak at 2.1 eV. However, μ-PL spectra measured on single NWs reveal a reduced broadening of the visible luminescence. The analysis of the longitudinal optical phonon Raman peak position and its shape reveal a variation in the In content between 20% and 30%, in agreement with the values estimated by PL and HRTEM investigations. The reported studies are important for understanding of the growth and properties of NW heterostructures suitable for applications in optoelectronics and photovoltaics.

  3. Structural and optical properties of InGaN--GaN nanowire heterostructures grown by molecular beam epitaxy

    DOE PAGES [OSTI]

    Limbach, F.; Gotschke, T.; Stoica, T.; Calarco, R.; Sutter, E.; Ciston, J.; Cusco, R.; Artus, L.; Kremling, S.; Hofling, S.; et al

    2011-01-01

    InGaN/GaN nanowire (NW) heterostructures grown by plasma assisted molecular beam epitaxy were studied in comparison to their GaN and InGaN counterparts. The InGaN/GaN heterostructure NWs are composed of a GaN NW, a thin InGaN shell, and a multifaceted InGaN cap wrapping the top part of the GaN NW. High-resolution transmission electron microscopy (HRTEM) images taken from different parts of a InGaN/GaN NW show a wurtzite structure of the GaN core and the epitaxial InGaN shell around it, while additional crystallographic domains are observed whithin the InGaN cap region. Large changes in the lattice parameter along the wire, from pure GaNmore » to higher In concentration demonstrate the successful growth of a complex InGaN/GaN NW heterostructure. Photoluminescence (PL) spectra of these heterostructure NW ensembles show rather broad and intense emission peak at 2.1 eV. However, μ-PL spectra measured on single NWs reveal a reduced broadening of the visible luminescence. The analysis of the longitudinal optical phonon Raman peak position and its shape reveal a variation in the In content between 20% and 30%, in agreement with the values estimated by PL and HRTEM investigations. The reported studies are important for understanding of the growth and properties of NW heterostructures suitable for applications in optoelectronics and photovoltaics.« less

  4. Structural and optical properties of InGaNGaN nanowire heterostructures grown by molecular beam epitaxy

    DOE PAGES [OSTI]

    Limbach, F.; Gotschke, T.; Stoica, T.; Calarco, R.; Sutter, E.; Ciston, J.; Cusco, R.; Artus, L.; Kremling, S.; Ho?fling, S.; et al

    2011-01-01

    InGaN/GaN nanowire (NW) heterostructures grown by plasma assisted molecular beam epitaxy were studied in comparison to their GaN and InGaN counterparts. The InGaN/GaN heterostructure NWs are composed of a GaN NW, a thin InGaN shell, and a multifaceted InGaN cap wrapping the top part of the GaN NW. High-resolution transmission electron microscopy (HRTEM) images taken from different parts of a InGaN/GaN NW show a wurtzite structure of the GaN core and the epitaxial InGaN shell around it, while additional crystallographic domains are observed whithin the InGaN cap region. Large changes in the lattice parameter along the wire, from pure GaNmoreto higher In concentration demonstrate the successful growth of a complex InGaN/GaN NW heterostructure. Photoluminescence (PL) spectra of these heterostructure NW ensembles show rather broad and intense emission peak at 2.1 eV. However, ?-PL spectra measured on single NWs reveal a reduced broadening of the visible luminescence. The analysis of the longitudinal optical phonon Raman peak position and its shape reveal a variation in the In content between 20% and 30%, in agreement with the values estimated by PL and HRTEM investigations. The reported studies are important for understanding of the growth and properties of NW heterostructures suitable for applications in optoelectronics and photovoltaics.less

  5. Investigation of surface-plasmon coupled red light emitting InGaN/GaN multi-quantum well with Ag nanostructures coated on GaN surface

    SciTech Connect

    Li, Yi; Liu, Bin E-mail: rzhang@nju.edu.cn; Zhang, Rong E-mail: rzhang@nju.edu.cn; Xie, Zili; Zhuang, Zhe; Dai, JiangPing; Tao, Tao; Zhi, Ting; Zhang, Guogang; Chen, Peng; Ren, Fangfang; Zhao, Hong; Zheng, Youdou

    2015-04-21

    Surface-plasmon (SP) coupled red light emitting InGaN/GaN multiple quantum well (MQW) structure is fabricated and investigated. The centre wavelength of 5-period InGaN/GaN MQW structure is about 620?nm. The intensity of photoluminescence (PL) for InGaN QW with naked Ag nano-structures (NS) is only slightly increased due to the oxidation of Ag NS as compared to that for the InGaN QW. However, InGaN QW with Ag NS/SiO{sub 2} structure can evidently enhance the emission efficiency due to the elimination of surface oxide layer of Ag NS. With increasing the laser excitation power, the PL intensity is enhanced by 25%53% as compared to that for the SiO{sub 2} coating InGaN QW. The steady-state electric field distribution obtained by the three-dimensional finite-difference time-domain method is different for both structures. The proportion of the field distributed in the Ag NS for the GaN/Ag NS/SiO{sub 2} structure is smaller as compared to that for the GaN/naked Ag NS structure. As a result, the energy loss of localized SP modes for the GaN/naked Ag NS structure will be larger due to the absorption of Ag layer.

  6. Strain-compensated (Ga,In)N/(Al,Ga)N/GaN multiple quantum wells for improved yellow/amber light emission

    SciTech Connect

    Lekhal, K.; Damilano, B. De Mierry, P.; Venngus, P.; Ngo, H. T.; Rosales, D.; Gil, B.; Hussain, S.

    2015-04-06

    Yellow/amber (570600?nm) emitting In{sub x}Ga{sub 1?x}N/Al{sub y}Ga{sub 1?y}N/GaN multiple quantum wells (QWs) have been grown by metal organic chemical vapor deposition on GaN-on- sapphire templates. When the (Al,Ga)N thickness of the barrier increases, the room temperature photoluminescence is red-shifted while its yield increases. This is attributed to an increase of the QW internal electric field and an improvement of the material quality due to the compensation of the compressive strain of the In{sub x}Ga{sub 1?x}N QWs by the Al{sub y}Ga{sub 1?y}N layers, respectively.

  7. Resolving the structure of Ti3C2Tx MXenes through multilevel structural modeling of the atomic pair distribution function

    DOE PAGES [OSTI]

    Wesolowski, David J.; Wang, Hsiu -Wen; Page, Katharine L.; Naguib, Michael; Gogotsi, Yury

    2015-12-08

    MXenes are a recently discovered family of two-dimensional (2D) early transition metal carbides and carbonitrides, which have already shown many attractive properties and a great promise in energy storage and many other applications. However, a complex surface chemistry and small coherence length has been an obstacle in some applications of MXenes, also limiting accuracy of predictions of their properties. In this study, we describe and benchmark a novel way of modeling layered materials with real interfaces (diverse surface functional groups and stacking order between the adjacent monolayers) against experimental data. The structures of three kinds of Ti3C2Tx MXenes (T standsmore » for surface terminating species, including O, OH, and F) produced under different synthesis conditions were resolved for the first time using atomic pair distribution function obtained by high-quality neutron total scattering. The true nature of the material can be easily captured with the sensitivity of neutron scattering to the surface species of interest and the detailed third-generation structure model we present. The modeling approach leads to new understanding of MXene structural properties and can replace the currently used idealized models in predictions of a variety of physical, chemical and functional properties of Ti3C2-based MXenes. Furthermore, the developed models can be employed to guide the design of new MXene materials with selected surface termination and controlled contact angle, catalytic, optical, electrochemical and other properties. We suggest that the multi-level structural modeling should form the basis for a generalized methodology on modeling diffraction and pair distribution function data for 2D and layered materials.« less

  8. On strongly GA-convex functions and stochastic processes

    SciTech Connect

    Bekar, Nurgl Okur; Akdemir, Hande Gnay; ??can, ?mdat

    2014-08-20

    In this study, we introduce strongly GA-convex functions and stochastic processes. We provide related well-known Kuhn type results and Hermite-Hadamard type inequality for strongly GA-convex functions and stochastic processes.

  9. Few-hole double quantum dot in an undoped GaAs/AlGaAs heterostructure

    SciTech Connect

    Tracy, L. A.; Hargett, T. W.; Reno, J. L.

    2014-03-24

    We demonstrate a hole double quantum dot in an undoped GaAs/AlGaAs heterostructure. The interdot coupling can be tuned over a wide range, from formation of a large single dot to two well-isolated quantum dots. Using charge sensing, we show the ability to completely empty the dot of holes and control the charge occupation in the few-hole regime. The device should allow for control of individual hole spins in single and double quantum dots in GaAs.

  10. InGaAs/GaAs quantum dot interdiffiusion induced by cap layer overgrowth

    SciTech Connect

    Jasinski, J.; Babinski, A.; Czeczott, M.; Bozek, R.

    2000-06-28

    The effect of thermal treatment during and after growth of InGaAs/GaAs quantum dot (QD) structures was studied. Transmission electron microscopy and atomic force microscopy confirmed the presence of interacting QDs, as was expected from analysis of temperature dependence of QD photoluminescence (PL) peak. The results indicate that the effect of post-growth annealing can be similar to the effect of elevated temperature of capping layer growth. Both, these thermal treatments can lead to a similar In and Ga interdiffiusion resulting in a similar blue-shift of QD PL peak.

  11. Optical spectroscopy of quantum confined states in GaAs/AlGaAs quantum well tubes

    SciTech Connect

    Shi, Teng; Fickenscher, Melodie; Smith, Leigh; Jackson, Howard; Yarrison-Rice, Jan; Gao, Qiang; Tan, Hoe; Jagadish, Chennupati; Etheridge, Joanne; Wong, Bryan M.

    2013-12-04

    We have investigated the quantum confinement of electronic states in GaAs/Al{sub x}Ga{sub 1?x}As nanowire heterostructures which contain radial GaAs quantum wells of either 4nm or 8nm. Photoluminescence and photoluminescence excitation spectroscopy are performed on single nanowires. We observed emission and excitation of electron and hole confined states. Numerical calculations of the quantum confined states using the detailed structural information on the quantum well tubes show excellent agreement with these optical results.

  12. Three-junction solar cells comprised of a thin-film GaInP/GaAs tandem cell mechanically stacked on a Si cell

    SciTech Connect

    Yazawa, Y.; Tamura, K.; Watahiki, S.; Kitatani, T.; Ohtsuka, H.; Warabisako, T.

    1997-12-31

    Three-junction tandem solar cells were fabricated by mechanical stacking of a thin-film GaInP/GaAs monolithic tandem cell and a Si cell. The epitaxial lift-off (ELO) technique was used for the thinning of GaInP/GaAs tandem cells. Both spectral responses of the GaInP top cell and the GaAs middle cell in the thin-film GaInP/GaAs monolithic tandem cell were conserved. The Si cell performance has been improved by reducing the absorption loss in the GaAs substrate.

  13. GaAs photoconductive semiconductor switch

    DOEpatents

    Loubriel, G.M.; Baca, A.G.; Zutavern, F.J.

    1998-09-08

    A high gain, optically triggered, photoconductive semiconductor switch (PCSS) implemented in GaAs as a reverse-biased pin structure with a passivation layer above the intrinsic GaAs substrate in the gap between the two electrodes of the device is disclosed. The reverse-biased configuration in combination with the addition of the passivation layer greatly reduces surface current leakage that has been a problem for prior PCSS devices and enables employment of the much less expensive and more reliable DC charging systems instead of the pulsed charging systems that needed to be used with prior PCSS devices. 5 figs.

  14. GaAs photoconductive semiconductor switch

    DOEpatents

    Loubriel, Guillermo M.; Baca, Albert G.; Zutavern, Fred J.

    1998-01-01

    A high gain, optically triggered, photoconductive semiconductor switch (PCSS) implemented in GaAs as a reverse-biased pin structure with a passivation layer above the intrinsic GaAs substrate in the gap between the two electrodes of the device. The reverse-biased configuration in combination with the addition of the passivation layer greatly reduces surface current leakage that has been a problem for prior PCSS devices and enables employment of the much less expensive and more reliable DC charging systems instead of the pulsed charging systems that needed to be used with prior PCSS devices.

  15. GA-AL-SC | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    GA-AL-SC GA-AL-SC October 1, 2012 ALA-1-N Wholesale Power Rate Schedule Area: PowerSouth Energy Cooperative System: Georgia-Alabama-South Carolina October 1, 2012 Duke-1-E Wholesale Power Rate Schedule Area: Duke On-System System: Georgia-Alabama-South Carolina October 1, 2012 Duke-2-E Wholesale Power Rate Schedule Area: Central System: Georgia-Alabama-South Carolina October 1, 2012 Duke-3-E Wholesale Power Rate Schedule Area: None System: Georgia-Alabama-South Carolina October 1, 2012 Duke-4-E

  16. GaN: Defect and Device Issues

    SciTech Connect

    Pearton, S.J.; Ren, F.; Shul, R.J.; Zolper, J.C.

    1998-11-09

    The role of extended and point defects, and key impurities such as C, O and H, on the electrical and optical properties of GaN is reviewed. Recent progress in the development of high reliability contacts, thermal processing, dry and wet etching techniques, implantation doping and isolation and gate insulator technology is detailed. Finally, the performance of GaN-based electronic and photonic devices such as field effect transistors, UV detectors, laser diodes and light-emitting diodes is covered, along with the influence of process-induced or grown-in defects and impurities on the device physics.

  17. Lattice-Mismatched GaAs/InGaAs Two-Junction Solar Cells by Direct Wafer Bonding

    SciTech Connect

    Tanabe, K.; Aiken, D. J.; Wanlass, M. W.; Morral, A. F.; Atwater, H. A.

    2006-01-01

    Direct bonded interconnect between subcells of a lattice-mismatched III-V compound multijunction cell would enable dislocation-free active regions by confining the defect network needed for lattice mismatch accommodation to tunnel junction interfaces, while metamorphic growth inevitably results in less design flexibility and lower material quality than is desirable. The first direct-bond interconnected multijunction solar cell, a two-terminal monolithic GaAs/InGaAs two-junction solar cell, is reported and demonstrates viability of direct wafer bonding for solar cell applications. The tandem cell open-circuit voltage was approximately the sum of the subcell open-circuit voltages. This achievement shows direct bonding enables us to construct lattice-mismatched III-V multijunction solar cells and is extensible to an ultrahigh efficiency InGaP/GaAs/InGaAsP/InGaAs four-junction cell by bonding a GaAs-based lattice-matched InGaP/GaAs subcell and an InP-based lattice-matched InGaAsP/InGaAs subcell. The interfacial resistance experimentally obtained for bonded GaAs/InP smaller than 0.10 Ohm-cm{sup 2} would result in a negligible decrease in overall cell efficiency of {approx}0.02%, under 1-sun illumination.

  18. HIA 2015 DOE Zero Energy Ready Home Case Study: Carl Franklin Homes, L.C./Green Extreme Homes, CDC, McKinley Project, Garland TX

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    Franklin Homes, L.C./ Green Extreme Homes, CDC McKinley Project Garland, TX DOE ZERO ENERGY READY HOME(tm) The U.S. Department of Energy invites home builders across the country to meet the extraordinary levels of excellence and quality specified in DOE's Zero Energy Ready Home program (formerly known as Challenge Home). Every DOE Zero Energy Ready Home starts with ENERGY STAR Certified Homes Version 3.0 for an energy-efficient home built on a solid foundation of building science research.

  19. Composition profiling of GaAs/AlGaAs quantum dots grown by droplet epitaxy

    SciTech Connect

    Bocquel, J.; Koenraad, P. M.; Giddings, A. D.; Prosa, T. J.; Larson, D. J.; Mano, T.

    2014-10-13

    Droplet epitaxy (DE) is a growth method which can create III-V quantum dots (QDs) whose optoelectronic properties can be accurately controlled through the crystallisation conditions. In this work, GaAs/AlGaAs DE-QDs have been analyzed with the complimentary techniques of cross-sectional scanning tunneling microscopy and atom probe tomography. Structural details and a quantitative chemical analysis of QDs of different sizes are obtained. Most QDs were found to be pure GaAs, while a small proportion exhibited high intermixing caused by a local etching process. Large QDs with a high aspect ratio were observed to have an Al-rich crown above the GaAs QD. This structure is attributed to differences in mobility of the cations during the capping phase of the DE growth.

  20. High-field quasi-ballistic transport in AlGaN/GaN heterostructures

    SciTech Connect

    Danilchenko, B. A.; Tripachko, N. A.; Belyaev, A. E.; Vitusevich, S. A. Hardtdegen, H.; Lth, H.

    2014-02-17

    Mechanisms of electron transport formation in 2D conducting channels of AlGaN/GaN heterostructures in extremely high electric fields at 4.2?K have been studied. Devices with a narrow constriction for the current flow demonstrate high-speed electron transport with an electron velocity of 6.8??10{sup 7}?cm/s. Such a velocity is more than two times higher than values reported for conventional semiconductors and about 15% smaller than the limit value predicted for GaN. Superior velocity is attained in the channel with considerable carrier reduction. The effect is related to a carrier runaway phenomenon. The results are in good agreement with theoretical predictions for GaN-based materials.

  1. InGaAs/GaAs (110) quantum dot formation via step meandering

    SciTech Connect

    Diez-Merino, Laura; Tejedor, Paloma

    2011-07-01

    InGaAs (110) semiconductor quantum dots (QDs) offer very promising prospects as a material base for a new generation of high-speed spintronic devices, such as single electron transistors for quantum computing. However, the spontaneous formation of InGaAs QDs is prevented by two-dimensional (2D) layer-by-layer growth on singular GaAs (110) substrates. In this work we have studied, by using atomic force microscopy and photoluminescence spectroscopy (PL), the growth of InGaAs/GaAs QDs on GaAs (110) stepped substrates by molecular beam epitaxy (MBE), and the modification of the adatom incorporation kinetics to surface steps in the presence of chemisorbed atomic hydrogen. The as-grown QDs exhibit lateral dimensions below 100 nm and emission peaks in the 1.35-1.37 eV range. It has been found that a step meandering instability derived from the preferential attachment of In adatoms to [110]-step edges relative to [11n]-type steps plays a key role in the destabilization of 2D growth that leads to 3D mound formation on both conventional and H-terminated vicinal substrates. In the latter case, the driving force for 3D growth via step meandering is enhanced by H-induced upward mass transport in addition to the lower energy cost associated with island formation on H-terminated substrates, which results in a high density array of InGaAs/GaAs dots selectively nucleated on the terrace apices with reduced lateral dimensions and improved PL efficiency relative to those of conventional MBE-grown samples.

  2. AlGaAs/GaAs photovoltaic converters for high power narrowband radiation

    SciTech Connect

    Khvostikov, Vladimir; Kalyuzhnyy, Nikolay; Mintairov, Sergey; Potapovich, Nataliia; Shvarts, Maxim; Sorokina, Svetlana; Andreev, Viacheslav; Luque, Antonio

    2014-09-26

    AlGaAs/GaAs-based laser power PV converters intended for operation with high-power (up to 100 W/cm{sup 2}) radiation were fabricated by LPE and MOCVD techniques. Monochromatic (? = 809 nm) conversion efficiency up to 60% was measured at cells with back surface field and low (x = 0.2) Al concentration 'window'. Modules with a voltage of 4 V and the efficiency of 56% were designed and fabricated.

  3. Sheet resistance under Ohmic contacts to AlGaN/GaN heterostructures

    SciTech Connect

    Hajłasz, M.; Donkers, J. J. T. M.; Sque, S. J.; Heil, S. B. S.; Gravesteijn, D. J.; Rietveld, F. J. R.; Schmitz, J.

    2014-06-16

    For the determination of specific contact resistance in semiconductor devices, it is usually assumed that the sheet resistance under the contact is identical to that between the contacts. This generally does not hold for contacts to AlGaN/GaN structures, where an effective doping under the contact is thought to come from reactions between the contact metals and the AlGaN/GaN. As a consequence, conventional extraction of the specific contact resistance and transfer length leads to erroneous results. In this Letter, the sheet resistance under gold-free Ti/Al-based Ohmic contacts to AlGaN/GaN heterostructures on Si substrates has been investigated by means of electrical measurements, transmission electron microscopy, and technology computer-aided design simulations. It was found to be significantly lower than that outside of the contact area; temperature-dependent electrical characterization showed that it exhibits semiconductor-like behavior. The increase in conduction is attributed to n-type activity of nitrogen vacancies in the AlGaN. They are thought to form during rapid thermal annealing of the metal stack when Ti extracts nitrogen from the underlying semiconductor. The high n-type doping in the region between the metal and the 2-dimensional electron gas pulls the conduction band towards the Fermi level and enhances horizontal electron transport in the AlGaN. Using this improved understanding of the properties of the material underneath the contact, accurate values of transfer length and specific contact resistance have been extracted.

  4. On-sun concentrator performance of GaInP/GaAs tandem cells

    SciTech Connect

    Friedman, D.J.; Kurtz, S.R.; Sinha, K.; McMahon, W.E.; Olson, J.M.

    1996-05-01

    The GaInP/GaAs concentrator device has been adapted for and tested in a prototype {open_quotes}real-world{close_quotes} concentrator power system. The device achieved an on-sun efficiency of 28% {+-} 1% in the range of approximately 200-260 suns with device operating temperatures of 38{degrees}C to 42{degrees}C. The authors discuss ways of further improving this performance for future devices.

  5. Properties of (Ga,Mn)As codoped with Li

    SciTech Connect

    Miyakozawa, Shohei; Chen, Lin; Matsukura, Fumihiro; Ohno, Hideo

    2014-06-02

    We grow Li codoped (Ga,Mn)As layers with nominal Mn composition up to 0.15 by molecular beam epitaxy. The layers before and after annealing are characterized by x-ray diffraction, transport, magnetization, and ferromagnetic resonance measurements. The codoping with Li reduces the lattice constant and electrical resistivity of (Ga,Mn)As after annealing. We find that (Ga,Mn)As:Li takes similar Curie temperature to that of (Ga,Mn)As, but with pronounced magnetic moments and in-plane magnetic anisotropy, indicating that the Li codoping has nontrivial effects on the magnetic properties of (Ga,Mn)As.

  6. Lateral and Vertical Transistors Using the AlGaN/GaN Heterostructure

    SciTech Connect

    Chowdhury, S; Mishra, UK

    2013-10-01

    Power conversion losses are endemic in all areas of electricity consumption, including motion control, lighting, air conditioning, and information technology. Si, the workhorse of the industry, has reached its material limits. Increasingly, the lateral AlGaN/GaN HEMT based on gallium nitride (GaN-on-Si) is becoming the device of choice for medium power electronics as it enables high-power conversion efficiency and reduced form factor at attractive pricing for wide market penetration. The reduced form factor enabled by high-efficiency operation at high frequency further enables significant system price reduction because of savings in bulky extensive passive elements and heat sink costs. The high-power market, however, still remains unaddressed by lateral GaN devices. The current and voltage demand for high power conversion application makes the chip area in a lateral topology so large that it becomes more difficult to manufacture. Vertical GaN devices would play a big role alongside of silicon carbide (SiC) to address the high power conversion needs. In this paper, the development, performance, and status of lateral and vertical GaN devices are discussed.

  7. GaNPAs Solar Cells Lattice-Matched To GaP: Preprint

    SciTech Connect

    Geisz, J. F.; Friedman, D. J.; Kurtz, S.

    2002-05-01

    This conference paper describes the III-V semiconductors grown on silicon substrates are very attractive for lower-cost, high-efficiency multijunction solar cells, but lattice-mismatched alloys that result in high dislocation densities have been unable to achieve satisfactory performance. GaNxP1-x-yAsy is a direct-gap III-V alloy that can be grown lattice-matched to Si when y= 4.7x - 0.1. We propose the use of lattice-matched GaNPAs on silicon for high-efficiency multijunction solar cells. We have grown GaNxP1-x-yAsy on GaP (with a similar lattice constant to silicon) by metal-organic chemical vapor phase epitaxy with direct band-gaps in the range of 1.5 to 2.0 eV. We demonstrate the performance of single-junction GaNxP1-x-yAsy solar cells grown on GaP substrates and discuss the prospects for the development of monolithic high-efficiency multijunction solar cells based on silicon substrates.

  8. SU-E-J-48: Imaging Origin-Radiation Isocenter Coincidence for Linac-Based SRS with Novalis Tx

    SciTech Connect

    Geraghty, C; Workie, D; Hasson, B

    2015-06-15

    Purpose To implement and evaluate an image-based Winston-Lutz (WL) test to measure the displacement between ExacTrac imaging origin and radiation isocenter on a Novalis Tx system using RIT V6.2 software analysis tools. Displacement between imaging and radiation isocenters was tracked over time. The method was applied for cone-based and MLC-based WL tests. Methods The Brainlab Winston-Lutz phantom was aligned to room lasers. The ExacTrac imaging system was then used to detect the Winston- Lutz phantom and obtain the displacement between the center of the phantom and the imaging origin. EPID images of the phantom were obtained at various gantry and couch angles and analyzed with RIT calculating the phantom center to radiation isocenter displacement. The RIT and Exactrac displacements were combined to calculate the displacement between imaging origin and radiation isocenter. Results were tracked over time. Results Mean displacements between ExacTrac origin and radiation isocenter were: VRT: −0.1mm ± 0.3mm, LNG: 0.5mm ± 0.2mm, LAT: 0.2mm ± 0.2mm (vector magnitude of 0.7 ± 0.2mm). Radiation isocenter was characterized by the mean of the standard deviations of the WL phantom displacements: σVRT: 0.2mm, σLNG: 0.4mm, σLAT: 0.6mm. The linac couch base was serviced to reduce couch walkout. This reduced σLAT to 0.2mm. These measurements established a new baseline of radiation isocenter-imaging origin coincidence. Conclusion The image-based WL test has ensured submillimeter localization accuracy using the ExacTrac imaging system. Standard deviations of ExacTrac-radiation isocenter displacements indicate that average agreement within 0.3mm is possible in each axis. This WL test is a departure from the tradiational WL in that imaging origin/radiation isocenter agreement is the end goal not lasers/radiation isocenter.

  9. Hybrid type-I InAs/GaAs and type-II GaSb/GaAs quantum dot structure with enhanced photoluminescence

    SciTech Connect

    Ji, Hai-Ming; Liang, Baolai Simmonds, Paul J.; Juang, Bor-Chau; Yang, Tao; Young, Robert J.; Huffaker, Diana L.

    2015-03-09

    We investigate the photoluminescence (PL) properties of a hybrid type-I InAs/GaAs and type-II GaSb/GaAs quantum dot (QD) structure grown in a GaAs matrix by molecular beam epitaxy. This hybrid QD structure exhibits more intense PL with a broader spectral range, compared with control samples that contain only InAs or GaSb QDs. This enhanced PL performance is attributed to additional electron and hole injection from the type-I InAs QDs into the adjacent type-II GaSb QDs. We confirm this mechanism using time-resolved and power-dependent PL. These hybrid QD structures show potential for high efficiency QD solar cell applications.

  10. Reactive codoping of GaAlInP compound semiconductors

    DOEpatents

    Hanna, Mark Cooper; Reedy, Robert

    2008-02-12

    A GaAlInP compound semiconductor and a method of producing a GaAlInP compound semiconductor are provided. The apparatus and method comprises a GaAs crystal substrate in a metal organic vapor deposition reactor. Al, Ga, In vapors are prepared by thermally decomposing organometallic compounds. P vapors are prepared by thermally decomposing phospine gas, group II vapors are prepared by thermally decomposing an organometallic group IIA or IIB compound. Group VIB vapors are prepared by thermally decomposing a gaseous compound of group VIB. The Al, Ga, In, P, group II, and group VIB vapors grow a GaAlInP crystal doped with group IIA or IIB and group VIB elements on the substrate wherein the group IIA or IIB and a group VIB vapors produced a codoped GaAlInP compound semiconductor with a group IIA or IIB element serving as a p-type dopant having low group II atomic diffusion.

  11. Chemical beam epitaxy growth of AlGaAs/GaAs tunnel junctions using trimethyl aluminium for multijunction solar cells

    SciTech Connect

    Paquette, B.; DeVita, M.; Turala, A.; Kolhatkar, G.; Boucherif, A.; Jaouad, A.; Aimez, V.; Ars, R.; Wilkins, M.; Wheeldon, J. F.; Walker, A. W.; Hinzer, K.; Fafard, S.

    2013-09-27

    AlGaAs/GaAs tunnel junctions for use in high concentration multijunction solar cells were designed and grown by chemical beam epitaxy (CBE) using trimethyl aluminium (TMA) as the p-dopant source for the AlGaAs active layer. Controlled hole concentration up to 4?10{sup 20} cm{sup ?3} was achieved through variation in growth parameters. Fabricated tunnel junctions have a peak tunneling current up to 6140 A/cm{sup 2}. These are suitable for high concentration use and outperform GaAs/GaAs tunnel junctions.

  12. ~tx410.ptx

    Energy Information Administration (EIA) (indexed site)

    ASA Committee Discussion. . . . . . . . . . . 48 Breakout Sessions New Biodiesel Fuel ... ASA Summary of New Biodiesel Fuel Survey. . .128 Barbara Forsyth ASA Summary of Economics ...

  13. ~tx421.ptx

    Energy Information Administration (EIA) (indexed site)

    ... time periods in which that 12 price really jumped around. ... term energy outlooks and long-term energy 13 outlooks right. ... and 20 coal and the other fuel groups, we're 21 releasing ...

  14. Training Session: Euless, TX

    Energy.gov [DOE]

    This 3.5-hour training provides builders with a comprehensive review of zero energy-ready home construction including the business case, detailed specifications, and opportunities to be recognized...

  15. D&TX

    Office of Legacy Management (LM)

    Fqpr an2 2. E. sulu+rr fis2 S*crep t & fbQ s-e: of the ?atagel DrFAm%un 1 0 * the >rt &Fzz d t& &men of ScieJce & >&7*-z 4-q 2s'; %rZion 0C the ZLLS of Science a2 3152-37 ...

  16. Study of the effects of GaN buffer layer quality on the dc characteristics of AlGaN/GaN high electron mobility transistors

    DOE PAGES [OSTI]

    Ahn, Shihyun; Zhu, Weidi; Dong, Chen; Le, Lingcong; Hwang, Ya-Hsi; Kim, Byung-Jae; Ren, Fan; Pearton, Stephen J.; Lind, Aaron G.; Jones, Kevin S.; et al

    2015-04-21

    Here we studied the effect of buffer layer quality on dc characteristics of AlGaN/GaN high electron mobility (HEMTs). AlGaN/GaN HEMT structures with 2 and 5 μm GaN buffer layers on sapphire substrates from two different vendors with the same Al concentration of AlGaN were used. The defect densities of HEMT structures with 2 and 5 μm GaN buffer layer were 7 × 109 and 5 × 108 cm₋2, respectively, as measured by transmission electron microscopy. There was little difference in drain saturation current or in transfer characteristics in HEMTs on these two types of buffer. However, there was no dispersionmore » observed on the nonpassivated HEMTs with 5 μm GaN buffer layer for gate-lag pulsed measurement at 100 kHz, which was in sharp contrast to the 71% drain current reduction for the HEMT with 2 μm GaN buffer layer.« less

  17. Study of the effects of GaN buffer layer quality on the dc characteristics of AlGaN/GaN high electron mobility transistors

    SciTech Connect

    Ahn, Shihyun; Zhu, Weidi; Dong, Chen; Le, Lingcong; Hwang, Ya-Hsi; Kim, Byung-Jae; Ren, Fan; Pearton, Stephen J.; Lind, Aaron G.; Jones, Kevin S.; Kravchenko, I. I.; Zhang, Ming-Lan

    2015-04-21

    Here we studied the effect of buffer layer quality on dc characteristics of AlGaN/GaN high electron mobility (HEMTs). AlGaN/GaN HEMT structures with 2 and 5 μm GaN buffer layers on sapphire substrates from two different vendors with the same Al concentration of AlGaN were used. The defect densities of HEMT structures with 2 and 5 μm GaN buffer layer were 7 × 109 and 5 × 108 cm₋2, respectively, as measured by transmission electron microscopy. There was little difference in drain saturation current or in transfer characteristics in HEMTs on these two types of buffer. However, there was no dispersion observed on the nonpassivated HEMTs with 5 μm GaN buffer layer for gate-lag pulsed measurement at 100 kHz, which was in sharp contrast to the 71% drain current reduction for the HEMT with 2 μm GaN buffer layer.

  18. Integrating AlGaN/GaN high electron mobility transistor with Si: A comparative study of integration schemes

    SciTech Connect

    Mohan, Nagaboopathy; Raghavan, Srinivasan; Manikant,; Soman, Rohith

    2015-10-07

    AlGaN/GaN high electron mobility transistor stacks deposited on a single growth platform are used to compare the most common transition, AlN to GaN, schemes used for integrating GaN with Si. The efficiency of these transitions based on linearly graded, step graded, interlayer, and superlattice schemes on dislocation density reduction, stress management, surface roughness, and eventually mobility of the 2D-gas are evaluated. In a 500 nm GaN probe layer deposited, all of these transitions result in total transmission electron microscopy measured dislocations densities of 1 to 3 × 10{sup 9}/cm{sup 2} and <1 nm surface roughness. The 2-D electron gas channels formed at an AlGaN-1 nm AlN/GaN interface deposited on this GaN probe layer all have mobilities of 1600–1900 cm{sup 2}/V s at a carrier concentration of 0.7–0.9 × 10{sup 13}/cm{sup 2}. Compressive stress and changes in composition in GaN rich regions of the AlN-GaN transition are the most effective at reducing dislocation density. Amongst all the transitions studied the step graded transition is the one that helps to implement this feature of GaN integration in the simplest and most consistent manner.

  19. Electron tunneling spectroscopy study of electrically active traps in AlGaN/GaN high electron mobility transistors

    SciTech Connect

    Yang, Jie Cui, Sharon; Ma, T. P.; Hung, Ting-Hsiang; Nath, Digbijoy; Krishnamoorthy, Sriram; Rajan, Siddharth

    2013-11-25

    We investigate the energy levels of electron traps in AlGaN/GaN high electron mobility transistors by the use of electron tunneling spectroscopy. Detailed analysis of a typical spectrum, obtained in a wide gate bias range and with both bias polarities, suggests the existence of electron traps both in the bulk of AlGaN and at the AlGaN/GaN interface. The energy levels of the electron traps have been determined to lie within a 0.5?eV band below the conduction band minimum of AlGaN, and there is strong evidence suggesting that these traps contribute to Frenkel-Poole conduction through the AlGaN barrier.

  20. Characterization of Vadose Zone Sediments Below the TX Tank Farm: Boreholes C3830, C3831, C3832 and RCRA Borehole 299-W10-27

    SciTech Connect

    Serne, R. Jeffrey; Bjornstad, Bruce N.; Horton, Duane G.; Lanigan, David C.; Lindenmeier, Clark W.; Lindberg, Michael J.; Clayton, Ray E.; Legore, Virginia L.; Orr, Robert D.; Kutnyakov, Igor V.; Baum, Steven R.; Geiszler, Keith N.; Valenta, Michelle M.; Vickerman, Tanya S.

    2008-09-11

    This report was revised in September 2008 to remove acid-extractable sodium data from Tables 4.8, 4.28,4.43, and 4.59. The sodium data was removed due to potential contamination introduced during the acid extraction process. The rest of the text remains unchanged from the original report issued in April 2004. The overall goal of the Tank Farm Vadose Zone Project, led by CH2M HILL Hanford Group, Inc., is to define risks from past and future single-shell tank farm activities at Hanford. To meet this goal, CH2M HILL Hanford Group, Inc. tasked scientists from Pacific Northwest National Laboratory to perform detailed analyses on vadose zone sediments from within Waste Management Area (WMA) T-TX-TY. This report is the first of two reports written to present the results of these analyses. Specifically, this report contains all the geologic, geochemical, and selected physical characterization data collected on vadose zone sediment recovered from boreholes C3830, C3831, and C3832 in the TX Tank Farm, and from borehole 299-W-10-27 installed northeast of the TY Tank Farm.

  1. Table 11. Summary of U.S. natural gas exports by point of exit...

    Energy Information Administration (EIA) (indexed site)

    ... 0 -- 2,910 13.91 0 -- 0 -- 0 -- LNG (China) Kenai, AK 0 -- 1,127 10.61 0 -- 0 -- 0 -- ... 0 -- 0 -- 2,618 11.27 0 -- 0 -- LNG (South Korea) Freeport, TX 2,861 8.09 6,242 10.89 ...

  2. Analysis of defects in GaAsN grown by chemical beam epitaxy on high index GaAs substrates

    SciTech Connect

    Bouzazi, Boussairi; Kojima, Nobuaki; Ohshita, Yoshio; Yamaguchi, Masafumi

    2013-09-27

    The lattice defects in GaAsN grown by chemical beam epitaxy on GaAs 311B and GaAs 10A toward [110] were characterized and discussed by using deep level transient spectroscopy (DLTS) and on the basis of temperature dependence of the junction capacitances (C{sub J}). In one hand, GaAsN films grown on GaAs 311B and GaAs 10A showed n-type and p-type conductivities, respectively although the similar and simultaneous growth conditions. This result is indeed in contrast to the common known effect of N concentration on the type of conductivity, since the surface 311B showed a significant improvement in the incorporation of N. Furthermore, the temperature dependence of C{sub J} has shown that GaAs 311B limits the formation of N-H defects. In the other hand, the energy states in the forbidden gap of GaAsN were obtained. Six electron traps, E1 to E6, were observed in the DLTS spectrum of GaAsN grown on GaAs 311B, with apparent activation energies of 0.02, 0.14, 0.16, 0.33, 0.48, and 0.74 eV below the bottom edge of the conduction band, respectively. In addition, four hole traps, H1 to H4, were observed in the DLTS spectrum of GaAsN grown on GaAs 10A, with energy depths of 0.13, 0.20, 0.39, and 0.52 eV above the valence band maximum of the alloy, respectively. Hence, the surface morphology of the GaAs substrate was found to play a key factor role in clarifying the electrical properties of GaAsN grown by CBE.

  3. Refractive index of erbium doped GaN thin films

    SciTech Connect

    Alajlouni, S.; Sun, Z. Y.; Li, J.; Lin, J. Y.; Jiang, H. X.; Zavada, J. M.

    2014-08-25

    GaN is an excellent host for erbium (Er) to provide optical emission in the technologically important as well as eye-safe 1540 nm wavelength window. Er doped GaN (GaN:Er) epilayers were synthesized on c-plane sapphire substrates using metal organic chemical vapor deposition. By employing a pulsed growth scheme, the crystalline quality of GaN:Er epilayers was significantly improved over those obtained by conventional growth method of continuous flow of reaction precursors. X-ray diffraction rocking curve linewidths of less than 300 arc sec were achieved for the GaN (0002) diffraction peak, which is comparable to the typical results of undoped high quality GaN epilayers and represents a major improvement over previously reported results for GaN:Er. Spectroscopic ellipsometry was used to determine the refractive index of the GaN:Er epilayers in the 1540 nm wavelength window and a linear dependence on Er concentration was found. The observed refractive index increase with Er incorporation and the improved crystalline quality of the GaN:Er epilayers indicate that low loss GaN:Er optical waveguiding structures are feasible.

  4. 0.7-eV GaInAs Junction for a GaInP/GaAs/GaInAs(1eV)/GaInAs(0.7eV) Four-Junction Solar Cell

    SciTech Connect

    Friedman, D. J.; Geisz, J. F.; Norman, A. G.; Wanlass, M. W.; Kurtz, S. R.

    2006-01-01

    We discuss recent developments in III-V multijunction solar cells, focusing on adding a fourth junction to the Ga{sub 0.5}In{sub 0.5} P/GaAs/Ga{sub 0.75}In{sub 0.25}As inverted three-junction cell. This cell, grown inverted on GaAs so that the lattice-mismatched Ga{sub 0.75}In{sub 0.25}As third junction is the last one grown, has demonstrated 38% efficiency, and 40% is likely in the near future. To achieve still further gains, a lower-bandgap Ga{sub x}In{sub 1-x}As fourth junction could be added to the three-junction structure for a four-junction cell whose efficiency could exceed 45% under concentration. Here, we present the initial development of the Ga{sub x}In{sub 1-x}As fourth junction. Junctions of various bandgaps ranging from 0.88 to 0.73 eV were grown, in order to study the effect of the different amounts of lattice mismatch. At a bandgap of 0.88 eV, junctions were obtained with very encouraging {approx}80% quantum efficiency, 57% fill factor, and 0.36 eV open-circuit voltage. The device performance degrades with decreasing bandgap (i.e., increasing lattice mismatch). We model the four-junction device efficiency vs. fourth junction bandgap to show that an 0.7-eV fourth-junction bandgap, while optimal if it could be achieved in practice, is not necessary; an 0.9-eV bandgap would still permit significant gains in multijunction cell efficiency while being easier to achieve than the lower-bandgap junction.

  5. Ab initio study of Ga-GaN system: Transition from adsorbed metal atoms to a metal–semiconductor junction

    SciTech Connect

    Witczak, Przemysław; Kempisty, Pawel; Strak, Pawel

    2015-11-15

    Ab initio studies of a GaN(0001)-Ga system with various thicknesses of a metallic Ga layer were undertaken. The studied systems extend from a GaN(0001) surface with a fractional coverage of gallium atoms to a Ga-GaN metal–semiconductor (m–s) contact. Electronic properties of the system are simulated using density functional theory calculations for different doping of the bulk semiconductor. It is shown that during transition from a bare GaN(0001) surface to a m–s heterostructure, the Fermi level stays pinned at a Ga-broken bond highly dispersive surface state to Ga–Ga states at the m–s interface. Adsorption of gallium leads to an energy gain of about 4 eV for a clean GaN(0001) surface and the energy decreases to 3.2 eV for a thickly Ga-covered surface. The transition to the m–s interface is observed. For a thick Ga overlayer such interface corresponds to a Schottky contact with a barrier equal to 0.9 and 0.6 eV for n- and p-type, respectively. Bond polarization-related dipole layer occurring due to an electron transfer to the metal leads to a potential energy jump of 1.5 eV, independent on the semiconductor doping. Additionally high electron density in the Ga–Ga bond region leads to an energy barrier about 1.2 eV high and 4 Å wide. This feature may adversely affect the conductivity of the n-type m–s system.

  6. Distributed bragg reflector using AIGaN/GaN

    DOEpatents

    Waldrip, Karen E.; Lee, Stephen R.; Han, Jung

    2004-08-10

    A supported distributed Bragg reflector or superlattice structure formed from a substrate, a nucleation layer deposited on the substrate, and an interlayer deposited on the nucleation layer, followed by deposition of (Al,Ga,B)N layers or multiple pairs of (Al,Ga,B)N/(Al,Ga,B)N layers, where the interlayer is a material selected from AlN, Al.sub.x Ga.sub.1-x N, and AlBN with a thickness of approximately 20 to 1000 angstroms. The interlayer functions to reduce or eliminate the initial tensile growth stress, thereby reducing cracking in the structure. Multiple interlayers utilized in an AlGaN/GaN DBR structure can eliminate cracking and produce a structure with a reflectivity value greater than 0.99.

  7. Efficiency enhancement of InGaN/GaN solar cells with nanostructures

    SciTech Connect

    Bai, J.; Yang, C. C.; Athanasiou, M.; Wang, T.

    2014-02-03

    We demonstrate InGaN/GaN multi-quantum-well solar cells with nanostructures operating at a wavelength of 520?nm. Nanostructures with a periodic nanorod or nanohole array are fabricated by means of modified nanosphere lithography. Under 1 sun air-mass 1.5 global spectrum illumination, a fill factor of 50 and an open circuit voltage of 1.9?V are achieved in spite of very high indium content in InGaN alloys usually causing degradation of crystal quality. Both the nanorod array and the nanohole array significantly improve the performance of solar cells, while a larger enhancement is observed for the nanohole array, where the conversion efficiency is enhanced by 51%.

  8. Raman spectroscopy of InGaAs/GaAs nanoheterostructures δ-doped with Mn

    SciTech Connect

    Plankina, S. M.; Vikhrova, O. V.; Danilov, Yu. A.; Zvonkov, B. N.; Kalentyeva, I. L.; Nezhdanov, A. V.; Chunin, I. I.; Yunin, P. A.

    2015-01-15

    The results of complex studies of InGaAs/GaAs nanoheterostructures δ-doped with Mn are reported. The structures are grown by metal-organic vapor-phase epitaxy in combination with laser deposition. By confocal Raman spectroscopy, it is shown that the low-temperature δ-doped GaAs cap layers are of higher crystal quality compared to uniformly doped layers. Scattering of light in the coupled phonon-plasmon mode is observed. The appearance of this mode is conditioned by the diffusion of manganese from the δ-layer. The thickness of the cap layer is found to be d{sub c} ≈ 9–20 nm, optimal for attainment of the highest photoluminescence intensity of the quantum well and the highest layer concentration of holes by doping with manganese.

  9. Electrical compensation by Ga vacancies in Ga{sub 2}O{sub 3} thin films

    SciTech Connect

    Korhonen, E.; Tuomisto, F.; Gogova, D.; Wagner, G.; Baldini, M.; Galazka, Z.; Schewski, R.; Albrecht, M.

    2015-06-15

    The authors have applied positron annihilation spectroscopy to study the vacancy defects in undoped and Si-doped Ga{sub 2}O{sub 3} thin films. The results show that Ga vacancies are formed efficiently during metal-organic vapor phase epitaxy growth of Ga{sub 2}O{sub 3} thin films. Their concentrations are high enough to fully account for the electrical compensation of Si doping. This is in clear contrast to another n-type transparent semiconducting oxide In{sub 2}O{sub 3}, where recent results show that n-type conductivity is not limited by cation vacancies but by other intrinsic defects such as O{sub i}.

  10. Graphene in ohmic contact for both n-GaN and p-GaN

    SciTech Connect

    Zhong, Haijian; Liu, Zhenghui; Shi, Lin; Xu, Gengzhao; Fan, Yingmin; Huang, Zengli; Wang, Jianfeng; Ren, Guoqiang; Xu, Ke

    2014-05-26

    The wrinkles of single layer graphene contacted with either n-GaN or p-GaN were found both forming ohmic contacts investigated by conductive atomic force microscopy. The local IV results show that some of the graphene wrinkles act as high-conductive channels and exhibiting ohmic behaviors compared with the flat regions with Schottky characteristics. We have studied the effects of the graphene wrinkles using density-functional-theory calculations. It is found that the standing and folded wrinkles with zigzag or armchair directions have a tendency to decrease or increase the local work function, respectively, pushing the local Fermi level towards n- or p-type GaN and thus improving the transport properties. These results can benefit recent topical researches and applications for graphene as electrode material integrated in various semiconductor devices.

  11. A InGaN/GaN quantum dot green ({lambda}=524 nm) laser

    SciTech Connect

    Zhang Meng; Banerjee, Animesh; Lee, Chi-Sen; Hinckley, John M.; Bhattacharya, Pallab

    2011-05-30

    The characteristics of self-organized InGaN/GaN quantum dot lasers are reported. The laser heterostructures were grown on c-plane GaN substrates by plasma-assisted molecular beam epitaxy and the laser facets were formed by focused ion beam etching with gallium. Emission above threshold is characterized by a peak at 524 nm (green) and linewidth of 0.7 nm. The lowest measured threshold current density is 1.2 kA/cm{sup 2} at 278 K. The slope and wall plug efficiencies are 0.74 W/A and {approx}1.1%, respectively, at 1.3 kA/cm{sup 2}. The value of T{sub 0}=233 K in the temperature range of 260-300 K.

  12. Photocapacitance study of type-II GaSb/GaAs quantum ring solar cells

    SciTech Connect

    Wagener, M. C.; Botha, J. R.; Carrington, P. J.; Krier, A.

    2014-01-07

    In this study, the density of states associated with the localization of holes in GaSb/GaAs quantum rings are determined by the energy selective charging of the quantum ring distribution. The authors show, using conventional photocapacitance measurements, that the excess charge accumulated within the type-II nanostructures increases with increasing excitation energies for photon energies above 0.9?eV. Optical excitation between the localized hole states and the conduction band is therefore not limited to the ?(k?=?0) point, with pseudo-monochromatic light charging all states lying within the photon energy selected. The energy distribution of the quantum ring states could consequently be accurately related from the excitation dependence of the integrated photocapacitance. The resulting band of localized hole states is shown to be well described by a narrow distribution centered 407?meV above the GaAs valence band maximum.

  13. Temperature dependency of the emission properties from positioned In(Ga)As/GaAs quantum dots

    SciTech Connect

    Braun, T.; Schneider, C.; Maier, S.; Forchel, A.; Höfling, S.; Kamp, M.; Igusa, R.; Iwamoto, S.; Arakawa, Y.

    2014-09-15

    In this letter we study the influence of temperature and excitation power on the emission linewidth from site-controlled InGaAs/GaAs quantum dots grown on nanoholes defined by electron beam lithography and wet chemical etching. We identify thermal electron activation as well as direct exciton loss as the dominant intensity quenching channels. Additionally, we carefully analyze the effects of optical and acoustic phonons as well as close-by defects on the emission linewidth by means of temperature and power dependent micro-photoluminescence on single quantum dots with large pitches.

  14. The disintegration of GaSb/GaAs nanostructures upon capping

    SciTech Connect

    Martin, Andrew J.; Hwang, Jinyoung; Marquis, Emmanuelle A.; Smakman, Erwin; Saucer, Timothy W.; Rodriguez, Garrett V.; Hunter, Allen H.; Sih, Vanessa; Koenraad, Paul M.; Phillips, Jamie D.; Millunchick, Joanna

    2013-01-01

    Atom probe tomography and cross-sectional scanning tunneling microscopy show that GaSb/GaAs quantum dots disintegrate into ring-like clusters of islands upon capping. Band transition energies calculated using an 8-band k.p model of the capped dots with the observed dimensions are consistent with emission energies observed in photoluminescence data. These results emphasize the need for full three-dimensional characterization to develop an accurate understanding of the structure, and thus the optical properties, of buried quantum dots.

  15. Photoluminescence studies of individual and few GaSb/GaAs quantum rings

    SciTech Connect

    Young, M. P.; Woodhead, C. S.; Roberts, J.; Noori, Y. J.; Noble, M. T.; Krier, A.; Hayne, M.; Young, R. J.; Smakman, E. P.; Koenraad, P. M.

    2014-11-15

    We present optical studies of individual and few GaSb quantum rings embedded in a GaAs matrix. Contrary to expectation for type-II confinement, we measure rich spectra containing sharp lines. These lines originate from excitonic recombination and are observed to have resolution-limited full-width at half maximum of 200 ?eV. The detail provided by these measurements allows the characteristic type-II blueshift, observed with increasing excitation power, to be studied at the level of individual nanostructures. These findings are in agreement with hole-charging being the origin of the observed blueshift.

  16. Application of the ASME code in the design of the GA-4 and GA-9 casks

    SciTech Connect

    Mings, W.J. ); Koploy, M.A. )

    1992-01-01

    General Atomics (GA) is developing two spent fuel shipping casks for transport by legal weight truck (LWT). The casks are designed to the loading, environmental conditions and safety requirements defined in Title 10 of the Code of Federal Regulations, Part 71 (10CFR71). To ensure that all components of the cask meet the 10CFR71 rules, GA established structural design criteria for each component based on NRC Regulatory Guides and the American Society of Mechanical Engineers Boiler and Pressure Vessel Code (ASME Code). This paper discusses the criteria used for different cask components, how they were applied and the conservatism and safety margins built into the criteria and assumption.

  17. Application of the ASME code in the design of the GA-4 and GA-9 casks

    SciTech Connect

    Mings, W.J.; Koploy, M.A.

    1992-08-01

    General Atomics (GA) is developing two spent fuel shipping casks for transport by legal weight truck (LWT). The casks are designed to the loading, environmental conditions and safety requirements defined in Title 10 of the Code of Federal Regulations, Part 71 (10CFR71). To ensure that all components of the cask meet the 10CFR71 rules, GA established structural design criteria for each component based on NRC Regulatory Guides and the American Society of Mechanical Engineers Boiler and Pressure Vessel Code (ASME Code). This paper discusses the criteria used for different cask components, how they were applied and the conservatism and safety margins built into the criteria and assumption.

  18. Origins of ion irradiation-induced Ga nanoparticle motion on GaAs surfaces

    SciTech Connect

    Kang, M.; Wu, J. H.; Chen, H. Y.; Thornton, K.; Goldman, R. S. [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States)] [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States); Sofferman, D. L. [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States) [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States); Department of Physics, Adelphi University, Garden City, New York 11530-0701 (United States); Beskin, I. [Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-1040 (United States)] [Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-1040 (United States)

    2013-08-12

    We have examined the origins of ion irradiation-induced nanoparticle (NP) motion. Focused-ion-beam irradiation of GaAs surfaces induces random walks of Ga NPs, which are biased in the direction opposite to that of ion beam scanning. Although the instantaneous NP velocities are constant, the NP drift velocities are dependent on the off-normal irradiation angle, likely due to a difference in surface non-stoichiometry induced by the irradiation angle dependence of the sputtering yield. It is hypothesized that the random walks are initiated by ion irradiation-induced thermal fluctuations, with biasing driven by anisotropic mass transport.

  19. Inverse spin Hall effect in Pt/(Ga,Mn)As

    SciTech Connect

    Nakayama, H.; Chen, L.; Chang, H. W.; Ohno, H.; Matsukura, F.

    2015-06-01

    We investigate dc voltages under ferromagnetic resonance in a Pt/(Ga,Mn)As bilayer structure. A part of the observed dc voltage is shown to originate from the inverse spin Hall effect. The sign of the inverse spin Hall voltage is the same as that in Py/Pt bilayer structure, even though the stacking order of ferromagnetic and nonmagnetic layers is opposite to each other. The spin mixing conductance at the Pt/(Ga,Mn)As interface is determined to be of the order of 10{sup 19 }m{sup −2}, which is about ten times greater than that of (Ga,Mn)As/p-GaAs.

  20. fe0013961-GaTech | netl.doe.gov

    U.S. Department of Energy (DOE) - all webpages (Extended Search)

    Performer Georgia Tech Research Corporation, Atlanta GA 30332 Background While earlier research focused on the properties of the hydrate mass per se (Sloan Jr and Koh 2007), ...

  1. Bismuth alloying properties in GaAs nanowires

    SciTech Connect

    Ding, Lu; Lu, Pengfei; Cao, Huawei; Cai, Ningning; Yu, Zhongyuan; Gao, Tao; Wang, Shumin

    2013-09-15

    First-principles calculations have been performed to investigate the structural, electronic and optical properties of bismuth alloying in GaAs nanowires. A typical model of Ga{sub 31}As{sub 31} nanowires is introduced for its reasonable band gap. The band gap of GaAs{sub 1−x}Bi{sub x} shrinks clearly with the increasing Bi concentration and the band edge shifts when spin–orbit coupling (SOC) is considered. The insertion of Bi atom leads to hybridization of Ga/As/Bi p states which contributes a lot around Fermi level. Scissor effect is involved. The optical properties are presented, including dielectric function, optical absorption spectra and reflectivity, which are also varied with the increasing of Bi concentrations. - Graphical abstract: Top view of Bi-doped GaAs nanowires. Ga, As, and Bi atoms are denoted with grey, purple and red balls, respectively. Display Omitted - Highlights: • A typical model of Ga{sub 31}As{sub 31} nanowires is introduced for its reasonable band gap. • The band gap of GaAs{sub 1−x}Bi{sub x} shrinks clearly with the increasing Bi concentration. • The band edge shifts when spin–orbit coupling (SOC) is considered. • The insertion of Bi atom leads to hybridization of Ga/As/Bi p states.

  2. Photoluminescence from GaAs nanodisks fabricated by using combination...

    Office of Scientific and Technical Information (OSTI)

    GaAs nanodisks fabricated by using combination of neutral beam etching and atomic hydrogen-assisted molecular beam epitaxy regrowth Citation Details In-Document Search Title:...

  3. Au impact on GaAs epitaxial growth on GaAs (111){sub B} substrates in molecular beam epitaxy

    SciTech Connect

    Liao, Zhi-Ming; Chen, Zhi-Gang; Xu, Hong-Yi; Guo, Ya-Nan; Sun, Wen; Zhang, Zhi; Yang, Lei; Lu, Zhen-Yu; Chen, Ping-Ping; Lu, Wei; Zou, Jin; Centre for Microscopy and Microanalysis, The University of Queensland, St. Lucia, Queensland 4072

    2013-02-11

    GaAs growth behaviour under the presence of Au nanoparticles on GaAs {l_brace}111{r_brace}{sub B} substrate is investigated using electron microscopy. It has been found that, during annealing, enhanced Ga surface diffusion towards Au nanoparticles leads to the GaAs epitaxial growth into {l_brace}113{r_brace}{sub B} faceted triangular pyramids under Au nanoparticles, governed by the thermodynamic growth, while during conventional GaAs growth, growth kinetics dominates, resulting in the flatted triangular pyramids at high temperature and the epitaxial nanowires growth at relatively low temperature. This study provides an insight of Au nanoparticle impact on GaAs growth, which is critical for understanding the formation mechanisms of semiconductor nanowires.

  4. Deep level defects in n-type GaAsBi and GaAs grown at low temperatures

    SciTech Connect

    Mooney, P. M.; Watkins, K. P.; Jiang, Zenan; Basile, A. F.; Lewis, R. B.; Bahrami-Yekta, V.; Masnadi-Shirazi, M.; Beaton, D. A.; Tiedje, T.

    2013-04-07

    Deep level defects in n-type GaAs{sub 1-x}Bi{sub x} having 0 < x < 0.012 and GaAs grown by molecular beam epitaxy (MBE) at substrate temperatures between 300 and 400 Degree-Sign C have been investigated by Deep Level Capacitance Spectroscopy. Incorporating Bi suppresses the formation of an electron trap with activation energy 0.40 eV, thus reducing the total trap concentration in dilute GaAsBi layers by more than a factor of 20 compared to GaAs grown under the same conditions. We find that the dominant traps in dilute GaAsBi layers are defect complexes involving As{sub Ga}, as expected for MBE growth at these temperatures.

  5. Deep level centers and their role in photoconductivity transients of InGaAs/GaAs quantum dot chains

    SciTech Connect

    Kondratenko, S. V. Vakulenko, O. V.; Mazur, Yu. I. Dorogan, V. G.; Marega, E.; Benamara, M.; Ware, M. E.; Salamo, G. J.

    2014-11-21

    The in-plane photoconductivity and photoluminescence are investigated in quantum dot-chain InGaAs/GaAs heterostructures. Different photoconductivity transients resulting from spectrally selecting photoexcitation of InGaAs QDs, GaAs spacers, or EL2 centers were observed. Persistent photoconductivity was observed at 80?K after excitation of electron-hole pairs due to interband transitions in both the InGaAs QDs and the GaAs matrix. Giant optically induced quenching of in-plane conductivity driven by recharging of EL2 centers is observed in the spectral range from 0.83?eV to 1.0?eV. Conductivity loss under photoexcitation is discussed in terms of carrier localization by analogy with carrier distribution in disordered media.

  6. Reactive codoping of GaAlInP compound semiconductors (Patent...

    Office of Scientific and Technical Information (OSTI)

    Patent: Reactive codoping of GaAlInP compound semiconductors Citation Details In-Document Search Title: Reactive codoping of GaAlInP compound semiconductors A GaAlInP compound ...

  7. Growth and Band Offsets of Epitaxial Lanthanide Oxides on GaN...

    Office of Scientific and Technical Information (OSTI)

    M.T.T., 60 (6) (2012) 3 Jon Ihlefeld, Sandia National Laboratories Electronic Materials ... Undoped GaN Undoped AlGaN Doped AlGaN 2D Electron Gas Enhancement Mode (nominally ...

  8. Long-wavelength shift and enhanced room temperature photoluminescence efficiency in GaAsSb/InGaAs/GaAs-based heterostructures emitting in the spectral range of 1.01.2??m due to increased charge carrier's localization

    SciTech Connect

    Kryzhkov, D. I. Yablonsky, A. N.; Morozov, S. V.; Aleshkin, V. Ya.; Krasilnik, Z. F.; Zvonkov, B. N.; Vikhrova, O. V.

    2014-11-28

    In this work, a study of the photoluminescence (PL) temperature dependence in quantum well GaAs/GaAsSb and double quantum well InGaAs/GaAsSb/GaAs heterostructures grown by metalorganic chemical vapor deposition with different parameters of GaAsSb and InGaAs layers has been performed. It has been demonstrated that in double quantum well InGaAs/GaAsSb/GaAs heterostructures, a significant shift of the PL peak to a longer-wavelength region (up to 1.2??m) and a considerable reduction in the PL thermal quenching in comparison with GaAs/GaAsSb structures can be obtained due to better localization of charge carriers in the double quantum well. For InGaAs/GaAsSb/GaAs heterostructures, an additional channel of radiative recombination with participation of the excited energy states in the quantum well, competing with the main ground-state radiative transition, has been revealed.

  9. An inverted AlGaAs/GaAs patterned-Ge tunnel junction cascade concentrator solar cell

    SciTech Connect

    Venkatasubramanian, R. )

    1993-01-01

    This report describes work to develop inverted-grown Al[sub 0.34]Ga[sub 0.66]As/GaAs cascades. Several significant developments are reported on as follows: (1) The AM1.5 1-sun total-area efficiency of the top Al[sub 0.34]Ga[sub 0.66]As cell for the cascade was improved from 11.3% to 13.2% (NREL measurement [total-area]). (2) The cycled'' organometallic vapor phase epitaxy growth (OMVPE) was studied in detail utilizing a combination of characterization techniques including Hall-data, photoluminescence, and secondary ion mass spectroscopy. (3) A technique called eutectic-metal-bonding (EMB) was developed by strain-free mounting of thin GaAs-AlGaAs films (based on lattice-matched growth on Ge substrates and selective plasma etching of Ge substrates) onto Si carrier substrates. Minority-carrier lifetime in an EMB GaAs double-heterostructure was measured as high as 103 nsec, the highest lifetime report for a freestanding GaAs thin film. (4) A thin-film, inverted-grown GaAs cell with a 1-sun AM1.5 active-area efficiency of 20.3% was obtained. This cell was eutectic-metal-bonded onto Si. (5) A thin-film inverted-grown, Al[sub 0.34]Ga[sub 0.66]As/GaAs cascade with AM1.5 efficiency of 19.9% and 21% at 1-sun and 7-suns, respectively, was obtained. This represents an important milestone in the development of an AlGaAs/GaAs cascade by OMVPE utilizing a tunnel interconnect and demonstrates a proof-of-concept for the inverted-growth approach.

  10. Characterization of Vadose Zone Sediments Below the TX Tank Farm: Probe Holes C3830, C3831, C3832 and 299-W10-27

    SciTech Connect

    Serne, R JEFFREY.; Bjornstad, Bruce N.; Horton, Duane G.; Lanigan, David C.; Lindenmeier, Clark W.; Lindberg, Michael J.; Clayton, Ray E.; LeGore, Virginia L.; Orr, Robert D.; Kutnyakov, Igor V.; Baum, Steven R.; Geiszler, Keith N.; Valenta, Michelle M.; Vickerman, Tanya S.

    2004-04-01

    Pacific Northwest National Laboratory performed detailed analyses on vadose zone sediments from within Waste Management Area T-TX-TY. This report contains all the geologic, geochemical, and selected physical characterization data collected on vadose zone sediment recovered from three probe holes (C3830, C3831, and C3832) in the TX Tank Farm, and from borehole 299-W-10-27. Sediments from borehole 299-W-10-27 are considered to be uncontaminated sediments that can be compared with contaminated sediments. This report also presents our interpretation of the sediment lithologies, the vertical extent of contamination, the migration potential of the contaminants, and the likely source of the contamination in the vadose zone and groundwater below the TX Tank Farm. Sediment from the probe holes was analyzed for: moisture, radionuclide and carbon contents;, one-to-one water extracts (soil pH, electrical conductivity, cation, trace metal, and anion data), and 8 M nitric acid extracts. Overall, our analyses showed that common ion exchange is a key mechanism that influences the distribution of contaminants within that portion of the vadose zone affected by tank liquor. We did not observe significant indications of caustic alteration of the sediment mineralogy or porosity, or significant zones of slightly elevated pH values in the probe holes. The sediments do show that sodium-, nitrate-, and sulfate-dominated fluids are present. The fluids are more dilute than tank fluids observed below tanks at the SX and BX Tank Farms. Three primary stratigraphic units were encountered in each probe hole: (1) backfill material, (2) the Hanford formation, and (3) the Cold Creek unit. Each of the probe holes contain thin fine-grained layers in the Hanford H2 stratigraphic unit that may impact the flow of leaked fluids and effect irregular and horizontal flow. The probe holes could not penetrate below the enriched calcium carbonate strata of the Cold Creek lower subunit; therefore, we did not

  11. DC characteristics of OMVPE-grown N-p-n InGaP/InGaAsN DHBTs

    SciTech Connect

    Li, N.Y.; Chang, P.C.; Baca, A.G.; Xie, X.M.; Sharps, P.R.; Hou, H.Q.

    2000-01-04

    The authors demonstrate, for the first time, a functional N-p-n heterojunction bipolar transistor using a novel material, InGaAsN, with a bandgap energy of 1.2eV as the p-type base layer. A 300{angstrom}-thick In{sub x}Ga{sub 1-x}As graded layer was introduced to reduce the conduction band offset at the p-type InGaAsN base and n-type GaAs collector junction. For an emitter size of 500 {mu}m{sup 2}, a peak current gain of 5.3 has been achieved.

  12. Interfacial bonding and electronic structure of GaN/GaAs interface: A first-principles study

    SciTech Connect

    Cao, Ruyue; Zhang, Zhaofu; Wang, Changhong; Li, Haobo; Dong, Hong; Liu, Hui; Wang, Weichao; Xie, Xinjian

    2015-04-07

    Understanding of GaN interfacing with GaAs is crucial for GaN to be an effective interfacial layer between high-k oxides and III-V materials with the application in high-mobility metal-oxide-semiconductor field effect transistor (MOSFET) devices. Utilizing first principles calculations, here, we investigate the structural and electronic properties of the GaN/GaAs interface with respect to the interfacial nitrogen contents. The decrease of interfacial N contents leads to more Ga dangling bonds and As-As dimers. At the N-rich limit, the interface with N concentration of 87.5% shows the most stability. Furthermore, a strong band offsets dependence on the interfacial N concentration is also observed. The valance band offset of N7 with hybrid functional calculation is 0.51 eV. The electronic structure analysis shows that significant interface states exist in all the GaN/GaAs models with various N contents, which originate from the interfacial dangling bonds and some unsaturated Ga and N atoms. These large amounts of gap states result in Fermi level pinning and essentially degrade the device performance.

  13. Self-catalyzed growth of dilute nitride GaAs/GaAsSbN/GaAs core-shell nanowires by molecular beam epitaxy

    SciTech Connect

    Kasanaboina, Pavan Kumar; Ahmad, Estiak; Li, Jia; Iyer, Shanthi; Reynolds, C. Lewis; Liu, Yang

    2015-09-07

    Bandgap tuning up to 1.3 μm in GaAsSb based nanowires by incorporation of dilute amount of N is reported. Highly vertical GaAs/GaAsSbN/GaAs core-shell configured nanowires were grown for different N contents on Si (111) substrates using plasma assisted molecular beam epitaxy. X-ray diffraction analysis revealed close lattice matching of GaAsSbN with GaAs. Micro-photoluminescence (μ-PL) revealed red shift as well as broadening of the spectra attesting to N incorporation in the nanowires. Replication of the 4K PL spectra for several different single nanowires compared to the corresponding nanowire array suggests good compositional homogeneity amongst the nanowires. A large red shift of the Raman spectrum and associated symmetric line shape in these nanowires have been attributed to phonon localization at point defects. Transmission electron microscopy reveals the dominance of stacking faults and twins in these nanowires. The lower strain present in these dilute nitride nanowires, as opposed to GaAsSb nanowires having the same PL emission wavelength, and the observation of room temperature PL demonstrate the advantage of the dilute nitride system offers in the nanowire configuration, providing a pathway for realizing nanoscale optoelectronic devices in the telecommunication wavelength region.

  14. Localized corrosion of GaAs surfaces and formation of porous GaAs

    SciTech Connect

    Schmuki, P.; Vitus, C.M.; Isaacs, H.S.; Fraser, J.; Graham, M.J.

    1995-12-01

    The present work deals with pitting corrosion of p- and n-type GaAs (100). Pit growth can be electrochemically initiated on both conduction types in chloride-containing solutions and leads after extended periods of time to the formation of a porous GaAs structure. In the case of p-type material, localized corrosion is only observed if a passivating film is present on the surface, otherwise -- e.g. in acidic solutions -- the material suffers from a uniform attack (electropolishing) which is independent of the anion present. In contrast, pitting corrosion of n-type material can be triggered independent of the presence of an oxide film. This is explained in terms of the different current limiting factor for the differently doped materials (oxide film in the case of the p- and a space charge layer in the case of the n-GaAs). The porous structure was characterized by SEM, EDX and AES, and consists mainly of GaAs. From scratch experiments it is clear that the pit initiation process is strongly influenced by surface defects. For n-type material, AFM investigations show that light induced roughening of the order of several hundred nm occurs under non-passivating conditions. This nm- scale roughening however does not affect the pitting process.

  15. AlGaAs/InGaAlP tunnel junctions for multijunction solar cells

    SciTech Connect

    SHARPS,P.R.; LI,N.Y.; HILLS,J.S.; HOU,H.; CHANG,PING-CHIH; BACA,ALBERT G.

    2000-05-16

    Optimization of GaInP{sub 2}/GaAs dual and GaInP{sub 2}/GaAs/Ge triple junction cells, and development of future generation monolithic multi-junction cells will involve the development of suitable high bandgap tunnel junctions. There are three criteria that a tunnel junction must meet. First, the resistance of the junction must be kept low enough so that the series resistance of the overall device is not increased. For AMO, 1 sun operation, the tunnel junction resistance should be below 5 x 10{sup {minus}2} {Omega}-cm. Secondly, the peak current density for the tunnel junction must also be larger than the J{sub sc} of the cell so that the tunnel junction I-V curve does not have a deleterious effect on the I-V curve of the multi-junction device. Finally, the tunnel junction must be optically transparent, i.e., there must be a minimum of optical absorption of photons that will be collected by the underlying subcells. The paper reports the investigation of four high bandgap tunnel junctions grown by metal-organic chemical vapor deposition.

  16. High-Efficiency GaInP/GaAs Tandem Solar Cells

    SciTech Connect

    Bertness, K. A.; Friedman, D. J.; Kurtz, S. R.; Kibbler, A. E.; Cramer, C.; Olson, J. M.

    1996-09-01

    GaInP/GaAs tandem solar cells have achieved efficiencies between 25.7-30.2%, depending on illumination conditions. The efficiencies are the highest confirmed two-terminal values measured for any solar cell within each standard illumination category. The monolithic, series-connected design of the tandem cells allows them to be substituted for silicon or gallium arsenide cells in photovoltaic panel systems with minimal design changes. The advantages of using GaInP/GaAs tandem solar cells in space and terrestrial applications are discussed primarily in terms of the reduction in balance-of-system costs that accrues when using a higher efficiency cell. The new efficiency values represent a significant improvement over previous efficiencies for this materials system, and we identify grid design, back interface passivation, and top interface passivation as the three key factors leading to this improvement. In producing the high-efficiency cells, we have addressed nondestructive diagnostics and materials growth reproducibility as well as peak cell performance.

  17. High-efficiency GaInP/GaAs tandem solar cells

    SciTech Connect

    Bertness, K.A.; Friedman, D.J.; Kurtz, S.R.; Kibbler, A.E.; Kramer, C.; Olson, J.M.

    1994-12-01

    GaInP/GaAs tandem solar cells have achieved new record efficiencies, specifically 25.7% under air-mass 0 (AM0) illumination, 29.5% under AM 1.5 global (AM1.5G) illumination, and 30.2% at 140-180x concentration under AM 1.5 direct (AM1.5D) illumination. These values are the highest two-terminal efficiencies achieved by any solar cell under these illumination conditions. The monolithic, series-connected design of the tandem cells allows them to be substituted for silicon or gallium arsenide cells in photovoltaic panel systems with minimal design changes. The advantages of using GaInP/GaAs tandem solar cells in space and terrestrial applications are discussed primarily in terms of the reduction in balance-of-system costs that accrues when using a higher efficiency cell. The new efficiency values represent a significant improvement over previous efficiencies for this materials system, and we identify grid design, back interface passivation, and top interface passivation as the three key factors leading to this improvement. In producing the high-efficiency cells, we have addressed nondestructive diagnostics and materials growth reproducibility as well as peak cell performance. 31 refs.

  18. TJ Solar Cell (GaInP/GaAs/Ge Ultrahigh-Efficiency Solar Cells

    SciTech Connect

    Friedman, Daniel

    2002-04-17

    This talk will discuss recent developments in III-V multijunction photovoltaic technology which have led to the highest-efficiency solar cells ever demonstrated. The relationship between the materials science of III-V semiconductors and the achievement of record solar cell efficiencies will be emphasized. For instance, epitaxially-grown GAInP has been found to form a spontaneously-ordered GaP/InP (111) superlattice. This ordering affects the band gap of the material, which in turn affects the design of solar cells which incorporate GaInP. For the next generation of ultrahigh-efficiency III-V solar cells, we need a new semiconductor which is lattice-matched to GaAs, has a band gap of 1 eV, and has long minority-carrier diffusion lengths. Out of a number of candidate materials, the recently-discovered alloy GaInNAs appears to have the greatest promise. This material satisfies the first two criteria, but has to date shown very low diffusion lengths, a problem which is our current focus in the development of these next-generation cells.

  19. Multijunction GaInP/GaInAs/Ge solar cells with Bragg reflectors

    SciTech Connect

    Emelyanov, V. M. Kalyuzhniy, N. A.; Mintairov, S. A.; Shvarts, M. Z.; Lantratov, V. M.

    2010-12-15

    Effect of subcell parameters on the efficiency of GaInP/Ga(In)As/Ge tandem solar cells irradiated with 1-MeV electrons at fluences of up to 3 x 10{sup 15} cm{sup -2} has been theoretically studied. The optimal thicknesses of GaInP and GaInAs subcells, which provide the best photocurrent matching at various irradiation doses in solar cells with and without built-in Bragg reflectors, were determined. The dependences of the photoconverter efficiency on the fluence of 1-MeV electrons and on the time of residence in the geostationary orbit were calculated for structures optimized to the beginning and end of their service lives. It is shown that the optimization of the subcell heterostructures for a rated irradiation dose and the introduction of Bragg reflectors into the structure provide a 5% overall increase in efficiency for solar cells operating in the orbit compared with unoptimized cells having no Bragg reflector.

  20. GaP/Si heterojunction Solar Cells

    SciTech Connect

    Saive, R.; Chen, C.; Emmer, H.; Atwater, H.

    2015-05-11

    Improving the efficiency of solar cells requires the introduction of novel device concepts. Recent developments have shown that in Si solar cell technology there is still room for tremendous improvement. Using the heterojunction with intrinsic thin layer (HIT) approach 25.6 % power conversion efficiency was achieved. However, a-Si as a window and passivation layer comes with disadvantages as a-Si shows low conductivity and high parasitic absorption. Therefore, it is likely that using a crystalline material as window layer with high band gab and high mobility can further improve efficiency. We have studied GaP grown by MOCVD on Si with (001) and (112) orientation. We obtained crystalline layers with carrier mobility around 100 cm2/Vs and which passivate Si as confirmed by carrier lifetime measurements. We performed band alignment studies by X-ray photoelectron spectroscopy yielding a valence band offset of 0.3 eV. Comparing this value with the Schottky-model leads to an interface dipole of 0.59 eV. The open circuit voltage increases with increasing doping and is consistent with the theoretical open circuit voltage deduced from work function difference and interface dipole. We obtain an open circuit voltage of 0.38 V for n-doped GaP with doping levels in the order of 10^17 1/cm^3. In our next steps we will increase the doping level further in order to gain higher open circuit voltage. We will discuss the implications of these findings for GaP/Si heterojunction solar cells.

  1. A monolithic white LED with an active region based on InGaN QWs separated by short-period InGaN/GaN superlattices

    SciTech Connect

    Tsatsulnikov, A. F. Lundin, W. V.; Sakharov, A. V.; Zavarin, E. E.; Usov, S. O.; Nikolaev, A. E.; Kryzhanovskaya, N. V.; Synitsin, M. A.; Sizov, V. S.; Zakgeim, A. L.; Mizerov, M. N.

    2010-06-15

    A new approach to development of effective monolithic white-light emitters is described based on using a short-period InGaN/GaN superlattice as a barrier layer in the active region of LED structures between InGaN quantum wells emitting in the blue and yellow-green spectral ranges. The optical properties of structures of this kind have been studied, and it is demonstrated that the use of such a superlattice makes it possible to obtain effective emission from the active region.

  2. Reliability of AlGaN/GaN high electron mobility transistors on low dislocation density bulk GaN substrate: Implications of surface step edges

    SciTech Connect

    Killat, N. E-mail: Martin.Kuball@bristol.ac.uk; Montes Bajo, M.; Kuball, M. E-mail: Martin.Kuball@bristol.ac.uk; Paskova, T.; Materials Science and Engineering Department, North Carolina State University, Raleigh, North Carolina 27695 ; Evans, K. R.; Leach, J.; Electrical and Computer Engineering Department, Virginia Commonwealth University, Richmond, Virginia 23284 ; Li, X.; Özgür, Ü.; Morkoç, H.; Chabak, K. D.; Crespo, A.; Gillespie, J. K.; Fitch, R.; Kossler, M.; Walker, D. E.; Trejo, M.; Via, G. D.; Blevins, J. D.

    2013-11-04

    To enable gaining insight into degradation mechanisms of AlGaN/GaN high electron mobility transistors, devices grown on a low-dislocation-density bulk-GaN substrate were studied. Gate leakage current and electroluminescence (EL) monitoring revealed a progressive appearance of EL spots during off-state stress which signify the generation of gate current leakage paths. Atomic force microscopy evidenced the formation of semiconductor surface pits at the failure location, which corresponds to the interaction region of the gate contact edge and the edges of surface steps.

  3. Atomic structure of defects in GaN:Mg grown with Ga polarity

    SciTech Connect

    Liliental-Weber, Z.; Tomaszewicz, T.; Zakharov, D.; Jasinski, J.; O'Keefe, M.A.; Hautakangas, S.; Laakso, A.; Saarinen, K.

    2003-11-25

    Electron microscope phase images, produced by direct reconstruction of the scattered electron wave from a focal series of high-resolution images, were used to determine the nature of defects formed in GaN:Mg crystals. We studied bulk crystals grown from dilute solutions of atomic nitrogen in liquid gallium at high pressure and thin films grown by the MOCVD method. All the crystals were grown with Ga-polarity. In both types of samples the majority of defects were three dimensional Mg-rich hexagonal pyramids with bases on the (0001) plane and six walls on {l_brace}11{und 2}3{r_brace} planes seen in cross-section as triangulars. Some other defects appear in cross-section as trapezoidal (rectangular) defects as a result of presence of truncated pyramids. Both type of defects have hollow centers. They are decorated by Mg on all six side walls and a base. The GaN which grows inside on the defect walls shows polarity inversion. It is shown that change of polarity starts from the defect tip and propagates to the base, and that the stacking sequence changes from ab in the matrix to bc inside the defect. Exchange of the Ga sublattice with the N sublattice within the defect leads to 0.6 {+-} 0.2{angstrom} displacement between Ga sublattices outside and inside the defects. It is proposed that lateral overgrowth of the cavities formed within the defect takes place to restore matrix polarity on the defect base.

  4. Photoeffects in WO{sub 3}/GaAs electrode

    SciTech Connect

    Yoon, K.H.; Lee, J.W.; Cho, Y.S.; Kang, D.H.

    1996-12-01

    Photoeffects of a {ital p}-type GaAs coated with WO{sub 3} thin film have been investigated as a function of film thickness and photoresponse transients of the WO{sub 3}/GaAs electrode were studied. Also, these results were compared to those for a single {ital p}-type GaAs electrode. The photocurrent of the WO{sub 3}/GaAs electrode depended on the film thickness of the WO{sub 3}, showing an optimum photon efficiency for specimens of 800 A thickness. This is due to the existence of an effective interface state within the band gap which reduces trapping of carriers and facilitates carrier movement. For an 800-A-thick WO{sub 3} thin film deposited {ital p}-GaAs photoelectrode, the photogenerated electrons were found to move to an electrolyte at a higher positive onset potential compared with that of single {ital p}-type GaAs, which was confirmed as a result of transient behavior. {ital I}{endash}{ital V} and {ital C}{endash}{ital V} characteristics of the WO{sub 3}/GaAs electrode were also compared with those of a single {ital p}-type GaAs electrode. {copyright} {ital 1996 American Institute of Physics.}

  5. Effect of InGaAs interlayer on the properties of GaAs grown on Si (111) substrate by molecular beam epitaxy

    SciTech Connect

    Wen, Lei; Gao, Fangliang; Li, Jingling; Guan, Yunfang; Wang, Wenliang; Zhou, Shizhong; Lin, Zhiting; Zhang, Xiaona; Zhang, Shuguang E-mail: mssgzhang@scut.edu.cn; Li, Guoqiang E-mail: mssgzhang@scut.edu.cn

    2014-11-21

    High-quality GaAs films have been epitaxially grown on Si (111) substrates by inserting an In{sub x}Ga{sub 1−x}As interlayer with proper In composition by molecular beam epitaxy (MBE). The effect of In{sub x}Ga{sub 1−x}As (0 < x < 0.2) interlayers on the properties of GaAs films grown on Si (111) substrates by MBE has been studied in detailed. Due to the high compressive strain between InGaAs and Si, InGaAs undergoes partial strain relaxation. Unstrained InGaAs has a larger lattice constant than GaAs. Therefore, a thin InGaAs layer with proper In composition may adopt a close lattice constant with that of GaAs, which is beneficial to the growth of high-quality GaAs epilayer on top. It is found that the proper In composition in In{sub x}Ga{sub 1−x}As interlayer of 10% is beneficial to obtaining high-quality GaAs films, which, on the one hand, greatly compensates the misfit stress between GaAs film and Si substrate, and on the other hand, suppresses the formation of multiple twin during the heteroepitaxial growth of GaAs film. However, when the In composition does not reach the proper value (∼10%), the In{sub x}Ga{sub 1−x}As adopts a lower strain relaxation and undergoes a lattice constant smaller than unstrained GaAs, and therefore introduces compressive stress to GaAs grown on top. When In composition exceeds the proper value, the In{sub x}Ga{sub 1−x}As will adopt a higher strain relaxation and undergoes a lattice constant larger than unstrained GaAs, and therefore introduces tensile stress to GaAs grown on top. As a result, In{sub x}Ga{sub 1−x}As interlayers with improper In composition introduces enlarged misfit stress to GaAs epilayers grown on top, and deteriorates the quality of GaAs epilayers. This work demonstrates a simple but effective method to grow high-quality GaAs epilayers and brings up a broad prospect for the application of GaAs-based optoelectronic devices on Si substrates.

  6. Altered biodistribution of Ga-67 by intramuscular gold salts

    SciTech Connect

    Moult, R.G.; Bekerman, C. )

    1989-11-01

    The authors observed a deviation from the normal scintigraphic pattern of Ga-67 citrate biodistribution. An 8-year-old black girl with juvenile rheumatoid arthritis, who had been treated with intramuscular injections of gold salts, had a Ga-67 study as part of her workup. The study demonstrated no hepatic uptake, but showed elevated skeletal and renal activity. This characteristic biodistribution of Ga-67 may be due to inhibition of lysosomal enzymes by gold and/or to accumulation of gold in lysosomes. To study these possibilities, the authors reviewed the mechanisms of Ga-67 localization and gold metabolism. Alteration of the Ga-67 citrate scintigraphic pattern due to earlier treatment with gold salts has not been reported previously.

  7. Elastic properties of Pu metal and Pu-Ga alloys

    SciTech Connect

    Soderlind, P; Landa, A; Klepeis, J E; Suzuki, Y; Migliori, A

    2010-01-05

    We present elastic properties, theoretical and experimental, of Pu metal and Pu-Ga ({delta}) alloys together with ab initio equilibrium equation-of-state for these systems. For the theoretical treatment we employ density-functional theory in conjunction with spin-orbit coupling and orbital polarization for the metal and coherent-potential approximation for the alloys. Pu and Pu-Ga alloys are also investigated experimentally using resonant ultrasound spectroscopy. We show that orbital correlations become more important proceeding from {alpha} {yields} {beta} {yields} {gamma} plutonium, thus suggesting increasing f-electron correlation (localization). For the {delta}-Pu-Ga alloys we find a softening with larger Ga content, i.e., atomic volume, bulk modulus, and elastic constants, suggest a weakened chemical bonding with addition of Ga. Our measurements confirm qualitatively the theory but uncertainties remain when comparing the model with experiments.

  8. Preparation and thermoelectric properties of Ga-substituted p-type fully filled skutterudites CeFe{sub 4-x}Ga{sub x}Sb{sub 12}

    SciTech Connect

    Tan, Gangjian; Wang, Shanyu; Tang, Xinfeng; Li, Han; Uher, Ctirad

    2012-12-15

    We demonstrate a successful substitution of Ga at the Fe sites with a solubility limit of -0.11 in the p-type filled skutterudite compounds CeFe{sub 4-x}Ga{sub x}Sb{sub 12}. With increasing Ga content, the electrical conductivity declines while the Seebeck coefficient improves gradually, consistent with the expected decrease in hole concentration due to the extra electrons introduced by Ga. Moreover, the resemblances in electrical transport properties between Ga- and Co-substituted systems with similar composition indicate that Ga doping exerts little influence on the electronic structure near the top of the valence band. The phonon transport is scarcely affected by the introduction of Ga because of negligible differences in atomic masses and sizes of Ga and Fe. The thermoelectric performance of Ga-substituted samples is slightly improved in the temperature range of 600 K to 800 K with respect to that of Ga-free sample, revealing a favorable effect of Ga-substitution on the intermediate temperature power generation application of this promising p-type material. - Graphical abstract: (a-c) Ga successfully substitutes Fe atoms up to x=0.11 in the CeFe{sub 4-x}Ga{sub x}Sb{sub 12}. (d) The introduction of Ga barely affects the electronic structure near E{sub F}. Highlights: Black-Right-Pointing-Pointer Ga as an effective substitute for Fe in p-type skutterudites CeFe{sub 4-x}Ga{sub x}Sb{sub 12}. Black-Right-Pointing-Pointer The solubility limit of Ga at Fe sites is -0.11 in CeFe{sub 4-x}Ga{sub x}Sb{sub 12}. Black-Right-Pointing-Pointer Ga barely affects the electronic structure near the Fermi level.

  9. Growth of GaN@InGaN Core-Shell and Au-GaN Hybrid Nanostructures for Energy Applications

    DOE PAGES [OSTI]

    Kuykendall, Tevye; Aloni, Shaul; Jen-La Plante, Ilan; Mokari, Taleb

    2009-01-01

    We demonstrated a method to control the bandgap energy of GaN nanowires by forming GaN@InGaN core-shell hybrid structures using metal organic chemical vapor deposition (MOCVD). Furthermore, we show the growth of Au nanoparticles on the surface of GaN nanowires in solution at room temperature. The work shown here is a first step toward engineering properties that are crucial for the rational design and synthesis of a new class of photocatalytic materials. The hybrid structures were characterized by various techniques, including photoluminescence (PL), energy dispersive x-ray spectroscopy (EDS), transmission and scanning electron microscopy (TEM and SEM), and x-ray diffraction (XRD).

  10. Defect reduction in epitaxial GaSb grown on nanopatterned GaAs substrates using full wafer block copolymer lithography

    SciTech Connect

    Jha, Smita; Liu, C.-C.; Nealey, P. F.; Kuech, T. F.; Kuan, T. S.; Babcock, S. E.; Park, J. H.; Mawst, L. J.

    2009-08-10

    Defect reduction in the large lattice mismatched system of GaSb on GaAs, {approx}7%, was accomplished using full wafer block copolymer (BCP) lithography. A self-assembled BCP mask layer was used to generate a hexagonal pattern of {approx}20 nm holes on {approx}40 nm centers in a 20 nm SiO{sub 2} layer. GaSb growth initially takes place selectively within these holes leading to a dense array of small, strain-relaxed epitaxial GaSb islands. The GaSb grown on the patterned SiO{sub 2} layer exhibits a reduction in the x-ray linewidth attributed to a decrease in the threading dislocation density when compared to blanket pseudomorphic film growth.

  11. Structural and emission properties of InGaAs/GaAs quantum dots emitting at 1.3??m

    SciTech Connect

    Goldmann, Elias Jahnke, Frank; Paul, Matthias; Kettler, Jan; Jetter, Michael; Michler, Peter; Krause, Florian F.; Mller, Knut; Mehrtens, Thorsten; Rosenauer, Andreas

    2014-10-13

    A combined experimental and theoretical study of InGaAs/GaAs quantum dots (QDs) emitting at 1.3??m under the influence of a strain-reducing InGaAs quantum well is presented. We demonstrate a red shift of 2040?nm observed in photoluminescence spectra due to the quantum well. The InGaAs/GaAs QDs grown by metal organic vapor phase epitaxy show a bimodal height distribution (1?nm and 5?nm) and indium concentrations up to 90%. The emission properties are explained with combined tight-binding and configuration-interaction calculations of the emission wavelengths in conjunction with high-resolution scanning transmission electron microscopy investigations of QD geometry and indium concentrations in the QDs, which directly enter the calculations. QD geometries and concentration gradients representative for the ensemble are identified.

  12. Progress toward technology transition of GaInP{sub 2}/GaAs/Ge multijunction solar cells

    SciTech Connect

    Keener, D.N.; Marvin, D.C.; Brinker, D.J.; Curtis, H.B.; Price, P.M.

    1997-12-31

    The objective of the joint WL/PL/NASA Multijunction Solar Cell Manufacturing Technology (ManTech) Program is to scale up high efficiency GaInP{sub 2}/GaAs/Ge multijunction solar cells to production size, quantity, and yield while limiting the production cost/Watt ($/W) to 15% over GaAs cells. Progress made by the program contractors, Spectrolab and TECSTAR, include, respectively, best cell efficiencies of 25.76% and 24.7% and establishment of 24.2% and 23.8% lot average efficiency baseline designs. The paper also presents side-by-side testing results collected by Phillips Laboratory and NASA Lewis on Phase 1 deliverable cells, which shows compliance with program objectives. Cell performance, pre- and post-radiation, and temperature coefficient results on initial production GaInP{sub 2}/GaAs/Ge solar cells will be presented.

  13. Optical properties of multi-stacked InGaAs/GaNAs quantum dot solar cell fabricated on GaAs (311)B substrate

    SciTech Connect

    Shoji, Yasushi; Akimoto, Katsuhiro; Okada, Yoshitaka

    2012-09-15

    Quantum dot solar cells (QDSCs) comprised of 10 stacked pairs of strain-compensated InGaAs/GaNAs QD structure have been fabricated by atomic hydrogen-assisted molecular beam epitaxy. A homogeneous and high-density QD array structure with improved in-plane ordering and total density of {approx}10{sup 12} cm{sup -2} has been achieved on GaAs (311)B grown at 460 Degree-Sign C after stacking. The external quantum efficiency (EQE) of InGaAs/GaNAs QDSC increases in the longer wavelength range due to additive contribution from QD layers inserted in the intrinsic region. The short-circuit current density measured for QDSC is 17.2 mA/cm{sup 2} compared to 14.8 mA/cm{sup 2} of GaAs reference cell. Further, an increase in EQE due to photocurrent production by 2-step photon absorption has been observed at room temperature though it is still small at around 0.1%.

  14. US, Latvia Commission Radiation Detection Equipment at Freeport...

    National Nuclear Security Administration (NNSA)

    Through its SLD program, NNSA also provides training to host government law enforcement officers and other personnel to detect smuggled nuclear and other radioactive materials. For ...

  15. Single photon emission from site-controlled InGaN/GaN quantum dots

    SciTech Connect

    Zhang, Lei; Hill, Tyler A.; Deng, Hui; Teng, Chu-Hsiang; Lee, Leung-Kway; Ku, Pei-Cheng

    2013-11-04

    Single photon emission was observed from site-controlled InGaN/GaN quantum dots. The single-photon nature of the emission was verified by the second-order correlation function up to 90 K, the highest temperature to date for site-controlled quantum dots. Micro-photoluminescence study on individual quantum dots showed linearly polarized single exciton emission with a lifetime of a few nanoseconds. The dimensions of these quantum dots were well controlled to the precision of state-of-the-art fabrication technologies, as reflected in the uniformity of their optical properties. The yield of optically active quantum dots was greater than 90%, among which 13%–25% exhibited single photon emission at 10 K.

  16. Room temperature spin transport in undoped (110) GaAs/AlGaAs quantum wells

    SciTech Connect

    Yokota, Nobuhide Aoshima, Yohei; Ikeda, Kazuhiro; Kawaguchi, Hitoshi

    2014-02-17

    We are reporting on our first observation of a micrometer-order electron spin transport in a (110) GaAs/AlGaAs multiple quantum well (QW) at room temperature using a space- and time-resolved Kerr rotation technique. A 37-μm transport was observed within an electron spin lifetime of 1.2 ns at room temperature when using an in-plane electric field of 1.75 kV/cm. The spatio-temporal profiles of electron spins were well reproduced by the spin drift-diffusion equations coupled with the Poisson equation, supporting the validity of the measurement. The results suggest that (110) QWs are useful as a spin transport layer for semiconductor spintronic devices operating at room temperature.

  17. Raman spectroscopy of GaP/GaNP core/shell nanowires

    SciTech Connect

    Dobrovolsky, A.; Chen, W. M.; Buyanova, I. A.; Sukrittanon, S.; Kuang, Y. J.; Tu, C. W.

    2014-11-10

    Raman spectroscopy is employed to characterize structural and phonon properties of GaP/GaNP core/shell nanowires (NWs) grown by molecular beam epitaxy on Si substrates. According to polarization-dependent measurements performed on single NWs, the dominant Raman modes associated with zone-center optical phonons obey selection rules in a zinc-blende lattice, confirming high crystalline quality of the NWs. Two additional modes at 360 and 397 cm{sup −1} that are specific to the NW architecture are also detected in resonant Raman spectra and are attributed to defect-activated scattering involving zone-edge transverse optical phonons and surface optical phonons, respectively. It is concluded that the formation of the involved defect states are mainly promoted during the NW growth with a high V/III ratio.

  18. Large linear magnetoresistance in a GaAs/AlGaAs heterostructure

    SciTech Connect

    Aamir, Mohammed Ali Goswami, Srijit Ghosh, Arindam; Baenninger, Matthias; Farrer, Ian; Ritchie, David A.; Tripathi, Vikram; Pepper, Michael

    2013-12-04

    We report non-saturating linear magnetoresistance (MR) in a two-dimensional electron system (2DES) at a GaAs/AlGaAs heterointerface in the strongly insulating regime. We achieve this by driving the gate voltage below the pinch-off point of the device and operating it in the non-equilibrium regime with high source-drain bias. Remarkably, the magnitude of MR is as large as 500% per Tesla with respect to resistance at zero magnetic field, thus dwarfing most non-magnetic materials which exhibit this linearity. Its primary advantage over most other materials is that both linearity and the enormous magnitude are retained over a broad temperature range (0.3 K to 10 K), thus making it an attractive candidate for cryogenic sensor applications.

  19. Sidewall passivation for InGaN/GaN nanopillar light emitting diodes

    SciTech Connect

    Choi, Won Hyuck; Abraham, Michael; Yu, Shih-Ying; You, Guanjun; Liu, Jie; Wang, Li; Xu, Jian; Mohney, Suzanne E.

    2014-07-07

    We studied the effect of sidewall passivation on InGaN/GaN multiquantum well-based nanopillar light emitting diode (LED) performance. In this research, the effects of varying etch rate, KOH treatment, and sulfur passivation were studied for reducing nanopillar sidewall damage and improving device efficiency. Nanopillars prepared under optimal etching conditions showed higher photoluminescence intensity compared with starting planar epilayers. Furthermore, nanopillar LEDs with and without sulfur passivation were compared through electrical and optical characterization. Suppressed leakage current under reverse bias and four times higher electroluminescence (EL) intensity were observed for passivated nanopillar LEDs compared with unpassivated nanopillar LEDs. The suppressed leakage current and EL intensity enhancement reflect the reduction of non-radiative recombination at the nanopillar sidewalls. In addition, the effect of sulfur passivation was found to be very stable, and further insight into its mechanism was gained through transmission electron microscopy.

  20. Evaluation of the two-photon absorption characteristics of GaSb/GaAs quantum rings

    SciTech Connect

    Wagener, M. C.; Botha, J. R.; Carrington, P. J.; Krier, A.

    2014-07-28

    The optical parameters describing the sub-bandgap response of GaSb/GaAs quantum rings solar cells have been obtained from photocurrent measurements using a modulated pseudo-monochromatic light source in combination with a second, continuous photo-filling source. By controlling the charge state of the quantum rings, the photoemission cross-sections describing the two-photon sub-bandgap transitions could be determined independently. Temperature dependent photo-response measurements also revealed that the barrier for thermal hole emission from the quantum rings is significantly below the quantum ring localisation energy. The temperature dependence of the sub-bandgap photo-response of the solar cell is also described in terms of the photo- and thermal-emission characteristics of the quantum rings.

  1. Ultrafast dynamics of type-II GaSb/GaAs quantum dots

    SciTech Connect

    Komolibus, K.; Piwonski, T.; Gradkowski, K.; Reyner, C. J.; Liang, B.; Huffaker, D. L.; Huyet, G.; Houlihan, J.

    2015-01-19

    In this paper, room temperature two-colour pump-probe spectroscopy is employed to study ultrafast carrier dynamics in type-II GaSb/GaAs quantum dots. Our results demonstrate a strong dependency of carrier capture/escape processes on applied reverse bias voltage, probing wavelength and number of injected carriers. The extracted timescales as a function of both forward and reverse bias may provide important information for the design of efficient solar cells and quantum dot memories based on this material. The first few picoseconds of the dynamics reveal a complex behaviour with an interesting feature, which does not appear in devices based on type-I materials, and hence is linked to the unique carrier capture/escape processes possible in type-II structures.

  2. Characterization of Cu(In,Ga)Se2 (CIGS) films with varying gallium ratios

    SciTech Connect

    Claypoole, Jesse; Peace, Bernadette; Sun, Neville; Dwyer, Dan; Eisaman, Matthew D.; Haldar, Pradeep; Efstathiadis, Harry

    2015-09-05

    Cu(In1-x,Gax)Se2 (CIGS) absorber layers were deposited on molybdenum (Mo) coated soda-lime glass substrates with varying Ga content (described as Ga/(In+Ga) ratios) with respect to depth. As the responsible mechanisms for the limitation of the performance of the CIGS solar cells with high Ga contents are not well understood, the goal of this work was to investigate different properties of CIGS absorber films with Ga/(In+Ga) ratios varied between 0.29 and 0.41 (as determined by X-ray florescence spectroscopy (XRF)) in order to better understand the role that the Ga content has on film quality. The Ga grading in the CIGS layer has the effect causing a higher bandgap toward the surface and Mo contact while the band gap in the middle of the CIGS layer is lower. Also, a wider and larger Ga/(In+Ga) grading dip located deeper in the CIGS absorber layers tend to produce larger grains in the regions of the films that have lower Ga/(In+Ga) ratios. It was found that surface roughness decreases from 51.2 nm to 41.0 nm with increasing Ga/(In+Ga) ratios. However, the surface roughness generally decreases if the Ga grading occurs deeper in the absorber layer.

  3. Thermal Design and Characterization of Heterogeneously Integrated InGaP/GaAs HBTs

    DOE PAGES [OSTI]

    Choi, Sukwon; Peake, Gregory M.; Keeler, Gordon A.; Geib, Kent M.; Briggs, Ronald D.; Beechem, Thomas E.; Shaffer, Ryan A.; Clevenger, Jascinda; Patrizi, Gary A.; Klem, John F.; et al

    2016-04-21

    Flip-chip heterogeneously integrated n-p-n InGaP/GaAs heterojunction bipolar transistors (HBTs) with integrated thermal management on wide-bandgap AlN substrates followed by GaAs substrate removal are demonstrated. Without thermal management, substrate removal after integration significantly aggravates self-heating effects, causing poor I–V characteristics due to excessive device self-heating. An electrothermal codesign scheme is demonstrated that involves simulation (design), thermal characterization, fabrication, and evaluation. Thermoreflectance thermal imaging, electrical-temperature sensitive parameter-based thermometry, and infrared thermography were utilized to assess the junction temperature rise in HBTs under diverse configurations. In order to reduce the thermal resistance of integrated devices, passive cooling schemes assisted by structural modification, i.e.,more » positioning indium bump heat sinks between the devices and the carrier, were employed. By implementing thermal heat sinks in close proximity to the active region of flip-chip integrated HBTs, the junction-to-baseplate thermal resistance was reduced over a factor of two, as revealed by junction temperature measurements and improvement of electrical performance. In conclusion, the suggested heterogeneous integration method accounts for not only electrical but also thermal requirements providing insight into realization of advanced and robust III–V/Si heterogeneously integrated electronics.« less

  4. Germanium subcells for multijunction GaInP/GaInAs/Ge solar cells

    SciTech Connect

    Kalyuzhnyy, N. A.; Gudovskikh, A. S.; Evstropov, V. V.; Lantratov, V. M.; Mintairov, S. A.; Timoshina, N. Kh.; Shvarts, M. Z.; Andreev, V. M.

    2010-11-15

    Photovoltaic converters based on n-GaInP/n-p-Ge heterostructures grown by the OMVPE under different conditions of formation of the p-n junction are studied. The heterostructures are intended for use as narrow-gap subcells of the GaInP/GaInAs/Ge three-junction solar cells. It is shown that, in Ge p-tn junctions, along with the diffusion mechanism, the tunneling mechanism of the current flow exists; therefore, the two-diode electrical equivalent circuit of the Ge p-n junction is used. The diode parameters are determined for both mechanisms from the analysis of both dark and 'light' current-voltage dependences. It is shown that the elimination of the component of the tunneling current allows one to increase the efficiency of the Ge subcell by {approx}1% with conversion of nonconcentrated solar radiation. The influence of the tunneling current on the efficiency of the Ge-based devices can be in practice reduced to zero at photogenerated current density of {approx}1.5 A/cm{sup 2} due to the use of the concentrated solar radiation.

  5. Transport properties of InGaAs/GaAs Heterostructures with {delta}-doped quantum wells

    SciTech Connect

    Baidus, N. V.; Vainberg, V. V.; Zvonkov, B. N.; Pylypchuk, A. S. Poroshin, V. N.; Sarbey, O. G.

    2012-05-15

    The lateral transport of electrons in single- and double-well pseudomorphic GaAs/n-InGaAs/GaAs heterostructures with quantum wells 50-100 meV deep and impurity {delta}-layers in the wells, with concentrations in the range 10{sup 11} < N{sub s} < 10{sup 12} cm{sup -2}, has been investigated. Single-well structures with a doped well at the center exhibit a nonmonotonic temperature dependence of the Hall coefficient and an increase in low-temperature electron mobility with an increase in the impurity concentration. The results obtained indicate that the impurity-band electron states play an important role in the conductivity of these structures. Involvement of the impurity band also allows to explain adequately the characteristics of the conductivity of double-well structures; in contrast to single-well structures, band bending caused by asymmetric doping is of great importance. The numerical calculations of conductivity within the model under consideration confirm these suggestions.

  6. Ferromagnetism in undoped One-dimensional GaN Nanowires

    SciTech Connect

    Jeganathan, K. E-mail: jagan@physics.bdu.ac.in; Purushothaman, V.; Debnath, R.; Arumugam, S.

    2014-05-15

    We report an intrinsic ferromagnetism in vertical aligned GaN nanowires (NW) fabricated by molecular beam epitaxy without any external catalyst. The magnetization saturates at ?0.75 emu/gm with the applied field of 3000 Oe for the NWs grown under the low-Gallium flux of 2.4 10{sup ?8} mbar. Despite a drop in saturation magnetization, narrow hysteresis loop remains intact regardless of Gallium flux. Magnetization in vertical standing GaN NWs is consistent with the spectral analysis of low-temperature photoluminescence pertaining to Ga-vacancies associated structural defects at the nanoscale.

  7. Characterization of Zns-GaP Naon-composites

    SciTech Connect

    Todd, V.

    1993-12-09

    It proved possible to produce consistent, high-quality nanocrystalline ZnS powders with grain sizes as small as 8 nm. These powders are nano-porous and are readily impregnated with GaP precursor, although inconsistently. Both crystal structure and small grain size of the ZnS can be maintained through the use of GaP. Heat treatment of the impregnated powders results in a ZnS-GaP composite structure where the grain sizes of the phases are on the order of 10--20 nm. Conventional powder processing should be able to produce optically dense ceramic compacts with improved mechanical properties and suitable IR transmission.

  8. Quaternary AlInGaN/InGaN quantum well on vicinal c-plane substrate for high emission intensity of green wavelengths

    SciTech Connect

    Park, Seoung-Hwan; Pak, Y. Eugene; Park, Chang Young; Mishra, Dhaneshwar; Yoo, Seung-Hyun; Cho, Yong-Hee Shim, Mun-Bo; Kim, Sungjin

    2015-05-14

    Electronic and optical properties of non-trivial semipolar AlInGaN/InGaN quantum well (QW) structures are investigated by using the multiband effective-mass theory and non-Markovian optical model. On vicinal c-plane GaN substrate miscut by a small angle (??GaN/InGaN system is shown to have ?3 times larger spontaneous emission peak intensity than the conventional InGaN/GaN system at green wavelength. It is attributed to much larger optical matrix element of the quaternary AlInGaN/InGaN system, derived from the reduction of internal electric field induced by polarizations. This effect exceeds the performance-degrading factor of smaller quasi-Fermi-level separation for the quaternary AlInGaN/InGaN system than that for the conventional InGaN/GaN system. Results indicate that the use of quaternary III-nitride QWs on vicinal substrates may be beneficial in improving the performance of optical devices emitting green light.

  9. Emission properties of InGaAs/GaAs heterostructures with quantum wells and dots after irradiation with neutrons

    SciTech Connect

    Baidus, N. V.; Vikhrova, O. V. Zvonkov, B. N.; Malysheva, E. I.; Trufanov, A. N.

    2015-03-15

    The effect of neutron radiation on the luminescence of InGaAs/GaAs heterostructures with quantum wells and quantum dots is studied. It is found that neutron radiation results both in the formation of defects and in the radiation-induced annealing of growth-related defects. Quantum dots are more stable to neutron radiation in comparison with quantum wells. It is shown that the layer of InGaAs/GaAs quantum dots located near the surface is less sensitive to irradiation with neutrons compared with a similar layer located in the bulk. In the first case, one can observe an increase in the photoluminescence and electroluminescence intensities after irradiation with neutrons, which is related to the effects of radiation-induced annealing. The pronounced effect of elastic strains in the InGaAs/GaAs quantum wells on the extent of quenching of the photoluminescence intensity upon irradiation with neutrons is revealed. In heterostructures with quantum wells, the effect of radiation-induced annealing manifests itself in a shift of the photoluminescence peak to longer wavelengths as a result of a decrease in elastic strains upon irradiation with neutrons. Doping of the GaAs buffer layer with silicon also reduces the value of this spectral shift.

  10. Outdoor Testing of GaInP2/GaAs Tandem Cells with Top Cell Thickness Varied

    SciTech Connect

    McMahon, W. E.; Emergy, K. E.; Friedman, D. J.; Ottoson, L.; Young, M. S.; Ward, J. S.; Kramer, C. M.; Duda, A.; Kurtz, S.

    2005-08-01

    In this study, we measure the performance of GaInP2/GaAs tandem cells under direct beam sunlight outdoors in order to quantify their sensitivity to both spectral variation and GaInP2 top-cell thickness. A set of cells with five different top-cell thicknesses was mounted on a two-axis tracker with the incident sunlight collimated to exclude all except the direct beam. Current-voltage (I-V) curves were taken throughout the course of several days, along with measurements of the direct solar spectrum. Our two major conclusions are: (1) GaInP2/GaAs tandem cells designed for either the ASTM G-173 direct (G-173D) spectrum or the "air mass 1.5 global" (AM1.5G) spectrum perform the best, and (2) cells can be characterized indoors and modeled using outdoor spectra with the same result. These results are equally valid for GaInP2/GaAs/Ge triple-junction cells.

  11. Local Structures and Interface Morphology of InGaAsN Thin Films Grown on GaAs

    SciTech Connect

    Allerman, A.A.; Chen, J.G.; Geisz, J.F.; Huang, S.; Hulbert, S.L.; Jones, E.D.; Kao, Y.H.; Kurtz, S.; Kurtz, S.R.; Olson, J.M.; Soo, Y.L.

    1999-02-23

    The compound semiconductor system InGaAsN exhibits many intriguing properties which are particularly useful for the development of innovative high efficiency thin film solar cells and long wavelength lasers. The bandgap in these semiconductors can be varied by controlling the content of N and In and the thin films can yet be lattice-matched to GaAs. In the present work, x-ray absorption fine structure (XAFS) and grazing incidence x-ray scattering (GIXS) techniques have been employed to probe the local environment surrounding both N and In atoms as well as the interface morphology of InGaAsN thin films epitaxially grown on GaAs. The soft x-ray XAFS results around nitrogen K-edge reveal that N is in the sp{sup 3} hybridized bonding configuration in InGaAsN and GaAsN, suggesting that N impurities most likely substitute for As sites in these two compounds. The results of In K-edge XAFS suggest a possible trend of a slightly larger coordination number of As nearest neighbors around In atoms in InGaAsN samples with a narrower bandgap whereas the In-As interatomic distance remains practically the same as in InAs within the experimental uncertainties. These results combined suggest that N-substitution of the As sites plays an important role of bandgap-narrowing while in the meantime counteracting the compressive strain caused by In-doping. Grazing incidence x-ray scattering (GIXS) experiments verify that InGaAsN thin films can indeed form very smooth interfaces with GaAs yielding an average interfacial roughness of 5-20{angstrom}.

  12. Electrical spin injection using GaCrN in a GaN based spin light emitting diode

    SciTech Connect

    Banerjee, D.; Ganguly, S.; Saha, D.; Adari, R.; Sankaranarayan, S.; Kumar, A.; Aldhaheri, R. W.; Hussain, M. A.; Balamesh, A. S.

    2013-12-09

    We have demonstrated electrical spin-injection from GaCrN dilute magnetic semiconductor (DMS) in a GaN-based spin light emitting diode (spin-LED). The remanent in-plane magnetization of the thin-film semiconducting ferromagnet has been used for introducing the spin polarized electrons into the non-magnetic InGaN quantum well. The output circular polarization obtained from the spin-LED closely follows the normalized in-plane magnetization curve of the DMS. A saturation circular polarization of ?2.5% is obtained at 200?K.

  13. Microscopic, electrical and optical studies on InGaN/GaN quantum wells based LED devices

    SciTech Connect

    Mutta, Geeta Rani; Venturi, Giulia; Castaldini, Antonio; Cavallini, Anna

    2014-02-21

    We report here on the micro structural, electronic and optical properties of a GaN-based InGaN/GaN MQW LED grown by the MOVPE method. The present study shows that the threading dislocations present in these LED structures are terminated as V pits at the surface and have an impact on the electrical and optical activity of these devices. It has been pointed that these dislocations were of edge, screw and mixed types. EBIC maps suggest that the electrically active defects are screw and mixed dislocations and behave as nonradiative recombinant centres.

  14. Effects of light illumination on electron velocity of AlGaN/GaN heterostructures under high electric field

    SciTech Connect

    Guo, Lei; Yang, Xuelin Cheng, Jianpeng; Sang, Ling; Xu, Fujun; Tang, Ning; Feng, Zhihong; Lv, Yuanjie; Wang, Xinqiang; Shen, B.; Ge, Weikun

    2014-12-15

    We have investigated the variation of electron velocity in AlGaN/GaN heterostructures depending on illuminating light intensity and wavelength. It is shown that the electron velocity at high electric field increases under above-band light illumination. This electron velocity enhancement is found to be related to the photo-generated cold holes which interact with hot electrons and thus accelerate the energy relaxation at high electric field. The results suggest an alternative way to improve the electron energy relaxation rate and hence the electron velocity in GaN based heterostructures.

  15. High-power InGaAs/GaAs quantum-well laser with enhanced broad spectrum of stimulated emission

    SciTech Connect

    Wang, Huolei; Yu, Hongyan; Zhou, Xuliang; Kan, Qiang; Yuan, Lijun; Wang, Wei; Pan, Jiaoqing; Chen, Weixi; Ding, Ying

    2014-10-06

    We report the demonstration of an InGaAs/GaAs quantum well (QW) broadband stimulated emission laser with a structure that integrated a GaAs tunnel junction with two QW active regions. The laser exhibits ultrabroad lasing spectral coverage of ?51?nm at a center wavelength of 1060?nm with a total emission power of 790 mW, corresponding to a high average spectral power density of 15.5 mW/nm, under pulsed current conditions. Compared to traditional lasers, this laser with an asymmetric separate-confinement heterostructure shows broader lasing bandwidth and higher spectral power density.

  16. Characterization of Cu(In,Ga)Se2 (CIGS) films with varying gallium ratios

    DOE PAGES [OSTI]

    Claypoole, Jesse; Peace, Bernadette; Sun, Neville; Dwyer, Dan; Eisaman, Matthew D.; Haldar, Pradeep; Efstathiadis, Harry

    2015-09-05

    Cu(In1-x,Gax)Se2 (CIGS) absorber layers were deposited on molybdenum (Mo) coated soda-lime glass substrates with varying Ga content (described as Ga/(In+Ga) ratios) with respect to depth. As the responsible mechanisms for the limitation of the performance of the CIGS solar cells with high Ga contents are not well understood, the goal of this work was to investigate different properties of CIGS absorber films with Ga/(In+Ga) ratios varied between 0.29 and 0.41 (as determined by X-ray florescence spectroscopy (XRF)) in order to better understand the role that the Ga content has on film quality. The Ga grading in the CIGS layer hasmore » the effect causing a higher bandgap toward the surface and Mo contact while the band gap in the middle of the CIGS layer is lower. Also, a wider and larger Ga/(In+Ga) grading dip located deeper in the CIGS absorber layers tend to produce larger grains in the regions of the films that have lower Ga/(In+Ga) ratios. It was found that surface roughness decreases from 51.2 nm to 41.0 nm with increasing Ga/(In+Ga) ratios. However, the surface roughness generally decreases if the Ga grading occurs deeper in the absorber layer.« less

  17. Radiation damage of GaAs thin-film solar cells on Si substrates

    SciTech Connect

    Itoh, Y.; Yamaguchi, M.; Nishioka, T.; Yamamoto, A.

    1987-01-15

    1-MeV electron irradiation damages in GaAs thin-film solar cells on Si substrates are examined for the first time. Damage constant for minority-carrier diffusion length in GaAs heteroepitaxial films on Si substrates is found to be the same as that in GaAs homoepitaxial films on GaAs substrates. This agreement suggests that GaAs/Si has the same defect introduction rate with radiation as GaAs/GaAs. The degradation of GaAs solar cells on Si with electron irradiation is less than that of GaAs solar cells on GaAs, because in the present, GaAs films on Si substrates have lower minority-carrier diffusion length compared to GaAs films on GaAs and these films are insensitive to radiation. The p/sup +/-p/sup +/-n AlGaAs-GaAs heteroface solar cell with junction depth of about 0.3 ..mu..m is concluded to be useful for a high-efficiency and radiation-resistant solar cell fabricated on a Si substrate.

  18. p-doping-free InGaN/GaN light-emitting diode driven by three-dimensional hole gas

    SciTech Connect

    Zhang, Zi-Hui; Tiam Tan, Swee; Kyaw, Zabu; Liu, Wei; Ji, Yun; Ju, Zhengang; Zhang, Xueliang [LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore (Singapore) [LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore (Singapore); LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Physical and Mathematical Sciences, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore (Singapore); Wei Sun, Xiao, E-mail: EXWSUN@ntu.edu.sg [LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore (Singapore); LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Physical and Mathematical Sciences, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore (Singapore); Department of Electronics and Electrical Engineering, South University of Science and Technology of China, Shenzhen, Guangdong 518055 (China); Volkan Demir, Hilmi, E-mail: VOLKAN@stanfordalumni.org [LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore (Singapore); LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Physical and Mathematical Sciences, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore (Singapore); Department of Electrical and Electronics, UNAM-Institute of Material Science and Nanotechnology, Bilkent University, Ankara TR-06800 (Turkey); Department of Physics, UNAM-Institute of Material Science and Nanotechnology, Bilkent University, Ankara TR-06800 (Turkey)

    2013-12-23

    Here, GaN/Al{sub x}Ga{sub 1-x}N heterostructures with a graded AlN composition, completely lacking external p-doping, are designed and grown using metal-organic-chemical-vapour deposition (MOCVD) system to realize three-dimensional hole gas (3DHG). The existence of the 3DHG is confirmed by capacitance-voltage measurements. Based on this design, a p-doping-free InGaN/GaN light-emitting diode (LED) driven by the 3DHG is proposed and grown using MOCVD. The electroluminescence, which is attributed to the radiative recombination of injected electrons and holes in InGaN/GaN quantum wells, is observed from the fabricated p-doping-free devices. These results suggest that the 3DHG can be an alternative hole source for InGaN/GaN LEDs besides common Mg dopants.

  19. Trap states in enhancement-mode double heterostructures AlGaN/GaN high electron mobility transistors with different GaN channel layer thicknesses

    SciTech Connect

    He, Yunlong; Wang, Chong Li, Xiangdong; Zhao, Shenglei; Mi, Minhan; Pei, Jiuqing; Zhang, Jincheng; Hao, Yue; Li, Peixian; Ma, Xiaohua

    2015-08-10

    This is the report on trap states in enhancement-mode AlGaN/GaN/AlGaN double heterostructures high electron mobility transistors by fluorine plasma treatment with different GaN channel layer thicknesses. Compared with the thick GaN channel layer sample, the thin one has smaller 2DEG concentration, lower electron mobility, lower saturation current, and lower peak transconductance, but it has a higher threshold voltage of 1.2 V. Deep level transient spectroscopy measurements are used to obtain the accurate capture cross section of trap states. By frequency dependent capacitance and conductance measurements, the trap state density of (1.98–2.56) × 10{sup 12 }cm{sup −2} eV{sup −1} is located at E{sub T} in a range of (0.37–0.44) eV in the thin sample, while the trap state density of (2.3–2.92) × 10{sup 12 }cm{sup −2} eV{sup −1} is located at E{sub T} in a range of (0.33–0.38) eV in the thick one. It indicates that the trap states in the thin sample are deeper than those in the thick one.

  20. Linear and nonlinear optical properties of GaAs/Al{sub x}Ga{sub 1?x}As/GaAs/Al{sub y}Ga{sub 1?y}As multi-shell spherical quantum dot

    SciTech Connect

    Emre Kavruk, Ahmet E-mail: aekavruk@gmail.com; Koc, Fatih; Sahin, Mehmet E-mail: mehsahin@gmail.com

    2013-11-14

    In this work, the optical properties of GaAs/Al{sub x}Ga{sub 1?x}As/GaAs/Al{sub y}Ga{sub 1?y}As multi-shell quantum dot heterostructure have been studied as a function of Al doping concentrations for cases with and without a hydrogenic donor atom. It has been observed that the absorption coefficient strength and/or resonant absorption wavelength can be adjusted by changing the Al content of inner-barrier and/or outer-barrier regions. Besides, it has been shown that the donor atom has an important effect on the control of the electronic and optical properties of the structure. The results have been presented as a function of the Al contents of the inner-barrier x and outer-barrier y regions and probable physical reasons have been discussed.

  1. Evaporation-based Ge/.sup.68 Ga Separation

    DOEpatents

    Mirzadeh, Saed; Whipple, Richard E.; Grant, Patrick M.; O'Brien, Jr., Harold A.

    1981-01-01

    Micro concentrations of .sup.68 Ga in secular equilibrium with .sup.68 Ge in strong aqueous HCl solution may readily be separated in ionic form from the .sup.68 Ge for biomedical use by evaporating the solution to dryness and then leaching the .sup.68 Ga from the container walls with dilute aqueous solutions of HCl or NaCl. The chloro-germanide produced during the evaporation may be quantitatively recovered to be used again as a source of .sup.68 Ga. If the solution is distilled to remove any oxidizing agents which may be present as impurities, the separation factor may easily exceed 10.sup.5. The separation is easily completed and the .sup.68 Ga made available in ionic form in 30 minutes or less.

  2. Intermixing of InGaAs/GaAs Quantum Well Using Multiple Cycles Annealing Cu-doped SiO2

    SciTech Connect

    Hongpinyo, V; Ding, Y H; Dimas, C E; Wang, Y; Ooi, B S; Qiu, W; Goddard, L L; Behymer, E M; Cole, G D; Bond, T C

    2008-06-11

    The authors investigate the effect of intermixing in InGaAs/GaAs quantum well structure using Cu-doped SiO{sub 2}. The incorporation of Cu into the silica film yields larger bandgap shift than typical impurity-free vacancy diffusion (IFVD) method at a lower activation temperature. We also observe enhancement of the photoluminescence (PL) signal from the intermixed InGaAs/GaAs quantum well structure after being cycle-annealed at 850 C.

  3. Towards Molecular Dynamics Simulations of InGaN Nanostructures.

    Office of Scientific and Technical Information (OSTI)

    (Conference) | SciTech Connect Towards Molecular Dynamics Simulations of InGaN Nanostructures. Citation Details In-Document Search Title: Towards Molecular Dynamics Simulations of InGaN Nanostructures. Abstract not provided. Authors: Zhou, Xiaowang ; Jones, Reese E. Publication Date: 2015-05-01 OSTI Identifier: 1258140 Report Number(s): SAND2015-4035C 584006 DOE Contract Number: AC04-94AL85000 Resource Type: Conference Resource Relation: Conference: Proposed for presentation at the 2015

  4. Towards Molecular Dynamics Simulations of InGaN Nanostructures.

    Office of Scientific and Technical Information (OSTI)

    (Conference) | SciTech Connect Towards Molecular Dynamics Simulations of InGaN Nanostructures. Citation Details In-Document Search Title: Towards Molecular Dynamics Simulations of InGaN Nanostructures. Abstract not provided. Authors: Zhou, Xiaowang ; Jones, Reese E. Publication Date: 2015-05-01 OSTI Identifier: 1258265 Report Number(s): SAND2015-4035C 584006 DOE Contract Number: AC04-94AL85000 Resource Type: Conference Resource Relation: Conference: Proposed for presentation at the 2015

  5. Laser Gain and Threshold Properties in Compressive-Strained and Lattice-Matched GaInNAs/GaAs Quantum Wells

    SciTech Connect

    Chow, W.W.; Jones, E.D.; Modine, N.A.; Allerman, A.A.; Kurtz, S.R.

    1999-08-04

    The optical gain spectra for compressive-strained and lattice-matched GaInNAs/GaAs quantum wells are computed using a microscopic laser theory. From these spectra, the peak gain and carrier radiative decay rate as functions of carrier density are determined. These dependences allow the study of lasing threshold current density for different GAInNAs/GaAs laser structures.

  6. Broadband control of emission wavelength of InAs/GaAs quantum dots by GaAs capping temperature

    SciTech Connect

    Kaizu, Toshiyuki; Matsumura, Takuya; Kita, Takashi

    2015-10-21

    We investigated the effects of the GaAs capping temperature on the morphological and photoluminescence (PL) properties of InAs quantum dots (QDs) on GaAs(001). The broadband tuning of the emission wavelength from 1.1 to 1.3 μm was achieved at room temperature by only adjusting the GaAs capping temperature. As the capping temperature was decreased, the QD shrinkage due to In desorption and In-Ga intermixing during the capping process was suppressed. This led to QDs with a high aspect ratio, and resultantly, the emission wavelength shifted toward the longer-wavelength side. In addition, the linearly polarized PL intensity elucidated anisotropic characteristics reflecting the shape anisotropy of the embedded QDs, in which a marked change in polarization anisotropy occurred at capping temperatures lower than 460 °C.

  7. Polarization field engineering of GaN/AlN/AlGaN superlattices for enhanced thermoelectric properties

    SciTech Connect

    Sztein, Alexander; Bowers, John E.; DenBaars, Steven P.; Nakamura, Shuji

    2014-01-27

    A novel polarization field engineering based strategy to simultaneously achieve high electrical conductivity and low thermal conductivity in thermoelectric materials is demonstrated. Polarization based electric fields are used to confine electrons into two-dimensional electron gases in GaN/AlN/Al{sub 0.2}Ga{sub 0.8}N superlattices, resulting in improved electron mobilities as high as 1176 cm{sup 2}/Vs and in-plane thermal conductivity as low as 8.9 W/mK. The resulting room temperature ZT values reach 0.08, a factor of four higher than InGaN and twelve higher than GaN, demonstrating the potential benefits of this polarization based engineering strategy for improving the ZT and efficiencies of thermoelectric materials.

  8. A new InGaP/GaAs tunneling heterostructure-emitter bipolar transistor (T-HEBT)

    SciTech Connect

    Tsai, Jung-Hui; Lee, Ching-Sung; Lour, Wen-Shiung; Ma, Yung-Chun; Ye, Sheng-Shiun

    2011-05-15

    Excellent characteristics of an InGaP/GaAs tunneling heterostructure-emitter bipolar transistor (T-HEBT) are first demonstrated. The insertion of a thin n-GaAs emitter layer between tynneling confinement and base layers effectivelty eliminates the potential spike at base-emitter junction and reduces the collector-emitter offset voltage, while the thin InGaP tunneling confinement layer is employed to reduce the transporting time across emitter region for electrons and maintain the good confinement effect for holes. Experimentally, the studied T-HEBN exhibits a maximum current gain of 285, a relatively low offset voltage of 40 mW, and a current-gain cutoff frequency of 26.4 GHz.

  9. The first principle study of Ni{sub 2}ScGa and Ni{sub 2}TiGa

    SciTech Connect

    zduran, Mustafa; Turgut, Kemal; Arikan, Nihat; ?yigr, Ahmet; Candan, Abdullah

    2014-10-06

    We computed the electronic structure, elastic moduli, vibrational properties, and Ni{sub 2}TiGa and Ni{sub 2}ScGa alloys in the cubic L2{sub 1} structure. The obtained equilibrium lattice constants of these alloys are in good agreement with available data. In cubic systems, there are three independent elastic constants, namely C{sub 11}, C{sub 12} and C{sub 44}. We calculated elastic constants in L2{sub 1} structure for Ni{sub 2}TiGa and Ni{sub 2}ScGa using the energy-strain method. The electronic band structure, total and partial density of states for these alloys were investigated within density functional theory using the plane-wave pseudopotential method implemented in Quantum-Espresso program package. From band structure, total and projected density of states, we observed metallic characters of these compounds. The electronic calculation indicate that the predominant contributions of the density of states at Fermi level come from the Ni 3d states and Sc 3d states for Ni{sub 2}TiGa, Ni 3d states and Sc 3d states for Ni{sub 2}ScGa. The computed density of states at Fermi energy are 2.22 states/eV Cell for Ni{sub 2}TiGa, 0.76 states/eV Cell for Ni{sub 2}ScGa. The vibrational properties were obtained using a linear response in the framework at the density functional perturbation theory. For the alloys, the results show that the L2{sub 1} phase is unstable since the phonon calculations have imagine modes.

  10. Structural transformations in amorphous ↔ crystalline phase change of Ga-Sb alloys

    SciTech Connect

    Edwards, T. G.; Sen, S.; Hung, I.; Gan, Z.; Kalkan, B.; Raoux, S.

    2013-12-21

    Ga-Sb alloys with compositions ranging between ∼12 and 50 at. % Ga are promising materials for phase change random access memory applications. The short-range structures of two such alloys with compositions Ga{sub 14}Sb{sub 86} and Ga{sub 46}Sb{sub 54} are investigated, in their amorphous and crystalline states, using {sup 71}Ga and {sup 121}Sb nuclear magnetic resonance spectroscopy and synchrotron x-ray diffraction. The Ga and Sb atoms are fourfold coordinated in the as-deposited amorphous Ga{sub 46}Sb{sub 54} with nearly 40% of the constituent atoms being involved in Ga-Ga and Sb-Sb homopolar bonding. This necessitates extensive bond switching and elimination of homopolar bonds during crystallization. On the other hand, Ga and Sb atoms are all threefold coordinated in the as-deposited amorphous Ga{sub 14}Sb{sub 86}. Crystallization of this material involves phase separation of GaSb domains in Sb matrix and a concomitant increase in the Ga coordination number from 3 to 4. Results from crystallization kinetics experiments suggest that the melt-quenching results in the elimination of structural “defects” such as the homopolar bonds and threefold coordinated Ga atoms in the amorphous phases of these alloys, thereby rendering them structurally more similar to the corresponding crystalline states compared to the as-deposited amorphous phases.

  11. Mismatch relaxation by stacking fault formation of AlN islands in AlGaN/GaN structures on m-plane GaN substrates

    SciTech Connect

    Smalc-Koziorowska, Julita; Sawicka, Marta; Skierbiszewski, Czeslaw; Grzegory, Izabella

    2011-08-08

    We study the mismatch relaxation of 2-5 nm thin elongated AlN islands formed during growth of AlGaN on bulk m-plane GaN by molecular beam epitaxy. The relaxation of these m-plane AlN layers is anisotropic and occurs through the introduction of stacking faults in [0001] planes during island coalescence, while no relaxation is observed along the perpendicular [1120] direction. This anisotropy in the mismatch relaxation and the formation of stacking faults in the AlN islands are explained by the growth mode of the AlN platelets and their coalescence along the [0001] direction.

  12. Atomic-column scanning transmission electron microscopy analysis of misfit dislocations in GaSb/GaAs quantum dots

    DOE PAGES [OSTI]

    Chisholm, Matthew F.; Fernandez-Delgado, N.; Herrera, M.; Kamarudin, M. A.; Zhuang, Q. D.; Hayne, M.; Molina, S. I.

    2016-05-17

    The structural quality of GaSb/GaAs quantum dots (QDs) has been analyzed at atomic scale by aberration-corrected high-angle annular dark-field scanning transmission electron microscopy. In particular, we have studied the misfit dislocations that appear because of the high-lattice mismatch in the heterostructure. Our results have shown the formation of Lomer dislocations not only at the interface between the GaSb QDs and the GaAs substrate, but also at the interface with the GaAs capping layer, which is not a frequent observation. The analysis of these dislocations points to the existence of chains of dislocation loops around the QDs. The dislocation core ofmore » the observed defects has been characterized, showing that they are reconstructed Lomer dislocations, which have less distortion at the dislocation core in comparison to unreconstructed ones. As a result, strain measurements using geometric phase analysis show that these dislocations may not fully relax the strain due to the lattice mismatch in the GaSb QDs.« less

  13. Efficient carrier relaxation and fast carrier recombination of N-polar InGaN/GaN light emitting diodes

    SciTech Connect

    Feng, Shih-Wei Liao, Po-Hsun; Leung, Benjamin; Han, Jung; Yang, Fann-Wei; Wang, Hsiang-Chen

    2015-07-28

    Based on quantum efficiency and time-resolved electroluminescence measurements, the effects of carrier localization and quantum-confined Stark effect (QCSE) on carrier transport and recombination dynamics of Ga- and N-polar InGaN/GaN light-emitting diodes (LEDs) are reported. The N-polar LED exhibits shorter ns-scale response, rising, delay, and recombination times than the Ga-polar one does. Stronger carrier localization and the combined effects of suppressed QCSE and electric field and lower potential barrier acting upon the forward bias in an N-polar LED provide the advantages of more efficient carrier relaxation and faster carrier recombination. By optimizing growth conditions to enhance the radiative recombination, the advantages of more efficient carrier relaxation and faster carrier recombination in a competitive performance N-polar LED can be realized for applications of high-speed flash LEDs. The research results provide important information for carrier transport and recombination dynamics of an N-polar InGaN/GaN LED.

  14. Effects of high-temperature AIN buffer on the microstructure of AlGaN/GaN HEMTs

    SciTech Connect

    Coerekci, S.; Oeztuerk, M. K.; Yu, Hongbo; Cakmak, M.; Oezcelik, S.; Oezbay, E.

    2013-06-15

    Effects on AlGaN/GaN high-electron-mobility transistor structure of a high-temperature AlN buffer on sapphire substrate have been studied by high-resolution x-ray diffraction and atomic force microscopy techniques. The buffer improves the microstructural quality of GaN epilayer and reduces approximately one order of magnitude the edge-type threading dislocation density. As expected, the buffer also leads an atomically flat surface with a low root-mean-square of 0.25 nm and a step termination density in the range of 10{sup 8} cm{sup -2}. Due to the high-temperature buffer layer, no change on the strain character of the GaN and AlGaN epitaxial layers has been observed. Both epilayers exhibit compressive strain in parallel to the growth direction and tensile strain in perpendicular to the growth direction. However, an high-temperature AlN buffer layer on sapphire substrate in the HEMT structure reduces the tensile stress in the AlGaN layer.

  15. Making it pay in Athens, GA

    SciTech Connect

    Malloy, M.G.

    1997-04-01

    The materials recovery facility (MRF) in Athens, GA, is a well-fed recycling facility. But, if the local government has its way, it will be even better fed in the near future. The Athens-Clarke County (ACC) regional municipality in which the facility resides has a put-or-pay contract with the plant`s owner/operator, under which the more it feeds the MRF, the more money it receives in return, through the sale of recycled end products. The ACC Solid Waste Department uses a volume-based waste collection system that encourages residents to recycle--the more they recycle, the less trash they have to put out, and the less they pay each month. The Athens facility, which will be a featured site tour at next month`s WasteExpo `97 in nearby Atlanta, had its ground-breaking two years ago, in April 1995. ACC is responsible for delivering material--or seeing that recyclables are delivered--to the MRF, which is owned and operated by Resource Recovery Systems (RRS, Centerbrook, Conn.). Over the past year, ACC has stepped up various incentives for businesses to recycle and send their recyclables to the facility, including instituting pilot programs for commercial interests that offer them versions of volume-based collection similar to that done by residents.

  16. High Voltage GaN Schottky Rectifiers

    SciTech Connect

    CAO,X.A.; CHO,H.; CHU,S.N.G.; CHUO,C.-C.; CHYI,J.-I.; DANG,G.T.; HAN,JUNG; LEE,C.-M.; PEARTON,S.J.; REN,F.; WILSON,R.G.; ZHANG,A.P.

    1999-10-25

    Mesa and planar GaN Schottky diode rectifiers with reverse breakdown voltages (V{sub RB}) up to 550V and >2000V, respectively, have been fabricated. The on-state resistance, R{sub ON}, was 6m{Omega}{center_dot} cm{sup 2} and 0.8{Omega}cm{sup 2}, respectively, producing figure-of-merit values for (V{sub RB}){sup 2}/R{sub ON} in the range 5-48 MW{center_dot}cm{sup -2}. At low biases the reverse leakage current was proportional to the size of the rectifying contact perimeter, while at high biases the current was proportional to the area of this contact. These results suggest that at low reverse biases, the leakage is dominated by the surface component, while at higher biases the bulk component dominates. On-state voltages were 3.5V for the 550V diodes and {ge}15 for the 2kV diodes. Reverse recovery times were <0.2{micro}sec for devices switched from a forward current density of {approx}500A{center_dot}cm{sup -2} to a reverse bias of 100V.

  17. Nano-scale luminescence characterization of individual InGaN/GaN quantum wells stacked in a microcavity using scanning transmission electron microscope cathodoluminescence

    SciTech Connect

    Schmidt, Gordon Mller, Marcus; Veit, Peter; Bertram, Frank; Christen, Jrgen; Glauser, Marlene; Carlin, Jean-Franois; Cosendey, Gatien; Butt, Raphal; Grandjean, Nicolas

    2014-07-21

    Using cathodoluminescence spectroscopy directly performed in a scanning transmission electron microscope at liquid helium temperatures, the optical and structural properties of a 62 InGaN/GaN multiple quantum well embedded in an AlInN/GaN based microcavity are investigated at the nanometer scale. We are able to spatially resolve a spectral redshift between the individual quantum wells towards the surface. Cathodoluminescence spectral linescans allow directly visualizing the critical layer thickness in the quantum well stack resulting in the onset of plastic relaxation of the strained InGaN/GaN system.

  18. Thermoelectric properties and nonstoichiometry of GaGeTe

    SciTech Connect

    Drasar, C.; Kucek, V.; Benes, L.; Lostak, P.; Vlcek, M.

    2012-09-15

    Polycrystalline samples of composition Ga{sub 1+x}Ge{sub 1-x}Te (x=-0.03 Division-Sign 0.07) and GaGeTe{sub 1-y} (y=-0.02 Division-Sign 0.02) were synthesized from elements of 5 N purity using a solid state reaction. The products of synthesis were identified by X-ray diffraction; phase purity and microstructure were examined by EDX/SEM. Samples for measurement of transport properties were prepared using hot-pressing. They were characterized by measurement of electrical conductivity, the Hall coefficient, and the Seebeck coefficient over a temperature range 80-480 K and of thermal conductivity over a temperature range 300-580 K. All samples show p-type conductivity. We discuss the influence of stoichiometry on the phase purity of the samples and on free carrier concentration. The investigation of thermoelectric properties shows that the power factor of these samples is low compared to state-of-the-art materials at room temperature but increases distinctly with temperature. - Graphical abstract: Structure and preparation of GaGeTe. Electrical conductivity {sigma}, the Hall coefficient R{sub H}, the Seebeck coefficient S and thermal conductivity {kappa} as a function of temperature for the Ga{sub 1.01}Ge{sub 0.99}Te{sub 0.99} sample. Highlights: Black-Right-Pointing-Pointer We explore thermoelectric and transport properties of Ga{sub 1+x}Ge{sub 1-x}Te and GaGeTe{sub 1-y}. Black-Right-Pointing-Pointer GaGeTe is p-type degenerate semiconductor; the hole concentration increase with x and y. Black-Right-Pointing-Pointer Maximum power factor {sigma}S{sup 2}=3.6 Multiplication-Sign 10{sup -4} Wm{sup -1} K{sup -2} at 475 K.

  19. High Quantum Efficiency AlGaN/InGaN Photodetectors

    SciTech Connect

    Buckley, James H; Leopold, Daniel

    2009-11-24

    High efficiency photon counting detectors in use today for high energy particle detection applications have a significant spectral mismatch with typical sources and have a number of practical problems compared with conventional bialkali photomultiplier tubes. Numerous high energy physics experiments that employ scintillation light detectors or Cherenkov detectors would benefit greatly from photomultipliers with higher quantum efficiencies. The need for extending the sensitivity of photon detectors to the blue and UV wavebands comes from the fact that both Cherenkov light and some scintillators have an emission spectrum which is peaked at short wavelengths. This research involves the development of high quantum efficiency, high gain, UV/blue photon counting detectors based on AlGaN/InGaN photocathode heterostructures grown by molecular beam epitaxy (MBE). The work could eventually lead to nearly ideal light detectors with a number of distinct advantages over existing technologies for numerous applications in high-energy physics and particle astrophysics. Potential advantages include much lower noise detection, better stability and radiation resistance than other cathode structures, very low radioactive background levels for deep underground experiments and high detection efficiency of individual UV-visible photons. We are also working on the development of photocathodes with intrinsic gain, initially improving the detection efficiency of hybrid semiconductor-vacuum tube devices, and eventually leading to an all-solid-state photomultiplier device.

  20. Enhanced optical property in quaternary GaInAsSb/AlGaAsSb quantum wells

    SciTech Connect

    Lin, Chien-Hung Lee, Chien-Ping

    2014-10-21

    High quality GaInAsSb/AlGaAsSb quantum wells (QWs) have been grown by molecular beam epitaxy using proper interface treatments. By controlling the group-V elements at interfaces, we obtained excellent optical quality QWs, which were free from undesired localized trap states, which may otherwise severely affect the exciton recombination. Strong and highly efficient exciton emissions up to room temperature with a wavelength of 2.2 μm were observed. A comprehensive investigation on the QW quality was carried out using temperature dependent and power dependent photoluminescence (PL) measurements. The PL emission intensity remains nearly constant at low temperatures and is free from the PL quenching from the defect induced localized states. The temperature dependent emission energy had a bulk-like behavior, indicating high quality well/barrier interfaces. Because of the uniformity of the QWs and smooth interfaces, the low temperature limit of inhomogeneous line width broadening is as small as 5 meV.

  1. The possibly important role played by Ga{sub 2}O{sub 3} during the activation of GaN photocathode

    SciTech Connect

    Fu, Xiaoqian E-mail: 214808748@qq.com; Wang, Honggang; Zhang, Junju; Li, Zhiming; Cui, Shiyao; Zhang, Lejuan

    2015-08-14

    Three different chemical solutions are used to remove the possible contamination on GaN surface, while Ga{sub 2}O{sub 3} is still found at the surface. After thermal annealing at 710 °C in the ultrahigh vacuum (UHV) chamber and activated with Cs/O, all the GaN samples are successfully activated to the effective negative electron affinity (NEA) photocathodes. Among all samples, the GaN sample with the highest content of Ga{sub 2}O{sub 3} after chemical cleaning obtains the highest quantum efficiency. By analyzing the property of Ga{sub 2}O{sub 3}, the surface processing results, and electron affinity variations during Cs and Cs/O{sub 2} deposition on GaN of other groups, it is suggested that before the adsorption of Cs, Ga{sub 2}O{sub 3} is not completely removed from GaN surface in our samples, which will combine with Cs and lead to a large decrease in electron affinity. Furthermore, the effective NEA is formed for GaN photocathode, along with the surface downward band bending. Based on this assumption, a new dipole model Ga{sub 2}O{sub 3}-Cs is suggested, and the experimental effects are explained and discussed.

  2. Strain relaxation in GaN/Al{sub x}Ga{sub 1-x}N superlattices grown by plasma-assisted molecular-beam epitaxy

    SciTech Connect

    Kotsar, Y.; Bellet-Amalric, E.; Das, A.; Monroy, E.; Sarigiannidou, E.

    2011-08-01

    We have investigated the misfit relaxation process in GaN/Al{sub x}Ga{sub 1-x}N (x = 0.1, 0.3, 0.44) superlattices (SL) deposited by plasma-assisted molecular beam epitaxy. The SLs under consideration were designed to achieve intersubband absorption in the mid-infrared spectral range. We have considered the case of growth on GaN (tensile stress) and on AlGaN (compressive stress) buffer layers, both deposited on GaN-on-sapphire templates. Using GaN buffer layers, the SL remains almost pseudomorphic for x = 0.1, 0.3, with edge-type threading dislocation densities below 9 x 10{sup 8} cm{sup -2} to 2 x 10{sup 9} cm{sup -2}. Increasing the Al mole fraction to 0.44, we observe an enhancement of misfit relaxation resulting in dislocation densities above 10{sup 10} cm{sup -2}. In the case of growth on AlGaN, strain relaxation is systematically stronger, with the corresponding increase in the dislocation density. In addition to the average relaxation trend of the SL, in situ measurements indicate a periodic fluctuation of the in-plane lattice parameter, which is explained by the different elastic response of the GaN and AlGaN surfaces to the Ga excess at the growth front. The results are compared with GaN/AlN SLs designed for near-infrared intersubband absorption.

  3. Enhanced sheet carrier densities in polarization controlled AlInN/AlN/GaN/InGaN field-effect transistor on Si (111)

    SciTech Connect

    Hennig, J. Dadgar, A.; Witte, H.; Bläsing, J.; Lesnik, A.; Strittmatter, A.; Krost, A.

    2015-07-15

    We report on GaN based field-effect transistor (FET) structures exhibiting sheet carrier densities of n = 2.9 10{sup 13} cm{sup −2} for high-power transistor applications. By grading the indium-content of InGaN layers grown prior to a conventional GaN/AlN/AlInN FET structure control of the channel width at the GaN/AlN interface is obtained. The composition of the InGaN layer was graded from nominally x{sub In} = 30 % to pure GaN just below the AlN/AlInN interface. Simulations reveal the impact of the additional InGaN layer on the potential well width which controls the sheet carrier density within the channel region of the devices. Benchmarking the In{sub x}Ga{sub 1−x}N/GaN/AlN/Al{sub 0.87}In{sub 0.13}N based FETs against GaN/AlN/AlInN FET reference structures we found increased maximum current densities of I{sub SD} = 1300 mA/mm (560 mA/mm). In addition, the InGaN layer helps to achieve broader transconductance profiles as well as reduced leakage currents.

  4. Alloy inhomogeneity and carrier localization in AlGaN sections and AlGaN/AlN nanodisks in nanowires with 240350?nm emission

    SciTech Connect

    Himwas, C.; Hertog, M. den; Dang, Le Si; Songmuang, R.; Monroy, E.

    2014-12-15

    We present structural and optical studies of AlGaN sections and AlGaN/AlN nanodisks (NDs) in nanowires grown by plasma-assisted molecular beam epitaxy. The Al-Ga intermixing at Al(Ga)N/GaN interfaces and the chemical inhomogeneity in AlGaN NDs evidenced by scanning transmission electron microscopy are attributed to the strain relaxation process. This interpretation is supported by the three-dimensional strain distribution calculated by minimizing the elastic energy in the structure. The alloy inhomogeneity increases with the Al content, leading to enhanced carrier localization signatures in the luminescence characteristics, i.e., red shift of the emission, s-shaped temperature dependence, and linewidth broadening. Despite these effects, the emission energy of AlGaN/AlN NDs can be tuned in the 240350?nm range with internal quantum efficiencies around 30%.

  5. Vertical zone melt growth of GaAs

    SciTech Connect

    Henry, R.L.; Nordquist, P.E.R.; Gorman, R.J.

    1993-12-31

    A Vertical Zone Melt (VZM) technique has been applied to the single crystal growth of GaAs. A pyrolytic boron nitride crucible and a (100) oriented seed were used along with liquid encapsulation by boric oxide. In the case of GaAs, the ampoule was pressurized with either argon or argensic vapor from elemental arsenic at pressures ranging from 1 to 2 atmospheres. A molten zone length of 22 mm gave a growth interface which is nearly flat and resulted in routine single crystal growth. Temperature gradients of 4{degrees}C/cm. and 9{degrees}C/cm. have produced dislocation densities of <1000/cm{sup 2} and 2000-5000/cm{sup 2} respectively for 34 mm diameter crystals of GaAs. Post growth cooling rates for GaAs have been 35, 160 and 500{degrees}C/hr. The cooling rate has been found to affect the number and size of arsenic precipitates and the EL2 concentration in the GaAs crystal. The effects of these and other growth parameters on the crystalline perfection and electrical properties of the crystals will be discussed.

  6. Ge doped GaN with controllable high carrier concentration for...

    Office of Scientific and Technical Information (OSTI)

    Ge doped GaN with controllable high carrier concentration for plasmonic applications Citation Details In-Document Search Title: Ge doped GaN with controllable high carrier...

  7. Dislocation confinement in the growth of Na flux GaN on metalorganic...

    Office of Scientific and Technical Information (OSTI)

    Dislocation confinement in the growth of Na flux GaN on metalorganic chemical vapor deposition-GaN Citation Details In-Document Search Title: Dislocation confinement in the growth ...

  8. Site-controlled fabrication of Ga nanodroplets by focused ion beam

    SciTech Connect

    Xu, Xingliang; Wang, Zhiming M.; Wu, Jiang; Li, Handong; Zhou, Zhihua; Wang, Xiaodong

    2014-03-31

    Ga droplets are created by focused ion beam irradiation of GaAs surface. We report that ordered Ga droplets can be formed on the GaAs surface without any implantation damage. The droplets are characterized with bigger sizes than those droplets formed on damaged area. These aligned Ga droplets are formed via the migration of Ga atoms from ion irradiation area to the edge of undamaged GaAs surface and further nucleation into droplets. The morphological evolution and size distribution of these nanodroplets are investigated systematically with different beam irradiation time and incident angles. Based on this method, well positioned Ga nanodroplets, such as chains, are achieved by using focus ion beam patterning. The controllable assembly of droplets on undamaged semiconductor surface can be used to fabricate templates, to fabricate quantum structures and quantum devices by droplet epitaxy technique.

  9. Price of Elba Island, GA Natural Gas LNG Imports from Equatorial...

    Energy Information Administration (EIA) (indexed site)

    Feet) Price of Elba Island, GA Natural Gas LNG Imports from Equatorial Guinea (Dollars per ... U.S. Price of Liquefied Natural Gas Imports by Point of Entry Elba Island, GA LNG Imports ...

  10. Price of Elba Island, GA Natural Gas LNG Imports from Nigeria...

    Annual Energy Outlook

    Nigeria (Nominal Dollars per Thousand Cubic Feet) Price of Elba Island, GA Natural Gas LNG ... U.S. Price of Liquefied Natural Gas Imports by Point of Entry Elba Island, GA LNG Imports ...

  11. Bismuth-induced phase control of GaAs nanowires grown by molecular...

    Office of Scientific and Technical Information (OSTI)

    Bismuth-induced phase control of GaAs nanowires grown by molecular beam epitaxy Citation Details In-Document Search Title: Bismuth-induced phase control of GaAs nanowires grown by ...

  12. High-Efficiency GaAs Thin-Film Solar Cell Reliability | Department...

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    GaAs Thin-Film Solar Cell Reliability High-Efficiency GaAs Thin-Film Solar Cell Reliability Presented at the PV Module Reliability Workshop, February 26 - 27 2013, Golden, Colorado ...

  13. Surface Chemistry of GaP(001) and InP(001) in Contact with Water...

    Office of Scientific and Technical Information (OSTI)

    Surface Chemistry of GaP(001) and InP(001) in Contact with Water Citation Details In-Document Search Title: Surface Chemistry of GaP(001) and InP(001) in Contact with Water ...

  14. Reactive codoping of GaAlInP compound semiconductors (Patent...

    Office of Scientific and Technical Information (OSTI)

    This site is a product of DOE's Office of Scientific and Technical Information (OSTI) and ... A GaAlInP compound semiconductor and a method of producing a GaAlInP compound ...

  15. Correlation of DLTS and Performance of GaInNAs Cells

    SciTech Connect

    Kurtz, S.; Johnston, S.; Friedman, D.; Ptak, A.; Geisz, J.; McMahon, W.; Olson, J.; Kibbler, A.; Crandall, R.; Ahrenkiel, R.; Kramer, C.; Young, M.

    2005-01-01

    A four-junction GaInP/GaAs/GaInAsN/Ge solar cell should be able to reach 40% efficiency if each of the junctions can be made with a quality similar to that demonstrated for GaAs. However, the GaInAsN subcell has shown poor performance. Deep-level transient spectroscopy (DLTS) can elucidate recombination centers in a material and could help identify the problem with the GaInAsN. So far, DLTS studies of GaInAsN have shown many peaks. In this paper we compare the performance of the GaInAsN solar cells with the DLTS spectra to identify which DLTS peak is correlated with the device performance.

  16. Structure and magnetic properties of Ce₃(Ni/Al/Ga)₁₁-A...

    Office of Scientific and Technical Information (OSTI)

    ...AlGa)-A new phase with the LaAl structure type Prev Next Title: Structure and magnetic properties of Ce(NiAlGa)-A new phase with the ...

  17. Contrasting Behavior of GaP(001) and InP(001) at the Interface...

    Office of Scientific and Technical Information (OSTI)

    Contrasting Behavior of GaP(001) and InP(001) at the Interface with Water Citation Details In-Document Search Title: Contrasting Behavior of GaP(001) and InP(001) at the Interface ...

  18. Electron-limiting defect complex in hyperdoped GaAs: The D D...

    Office of Scientific and Technical Information (OSTI)

    Electron-limiting defect complex in hyperdoped GaAs: The D D X center Prev Next Title: Electron-limiting defect complex in hyperdoped GaAs: The D D X center Authors: Ma, Jie ...

  19. Coexistence of charge-density wave and ferromagnetism in Ni2MnGa...

    Office of Scientific and Technical Information (OSTI)

    Coexistence of charge-density wave and ferromagnetism in Ni2MnGa Citation Details In-Document Search Title: Coexistence of charge-density wave and ferromagnetism in Ni2MnGa ...

  20. Novel photoaffinity ligands for the GA-receptor

    SciTech Connect

    Suttle, J.C.; Hultstrand, J.F.; Tanaka, F.S. )

    1990-05-01

    Previous studies from this laboratory have shown that certain N-substituted phthalimides (NSPs) exhibit GA-like activity in a range of specific bioassays and that bioactive NSPs compete with ({sup 3}H)-GA{sub 4} for soluble binding sites in cucumber homogenates. As such, these compounds may prove useful in the purification and characterization of GA receptor proteins. To this end, five azido-NSPs have been synthesized and are currently being screened for biological activity and photochemical stability. Three azido-NSPs elicit {alpha}-amylase production in barley half-seeds and stimulate tissue elongation in d{sub 5} maize, lettuce, sunflower, and soybean. Further evaluations are in progress and these data as well as the utility of these compounds as photo-affinity ligands will be discussed.

  1. Quaternary InGaAsSb Thermophotovoltaic Diode Technology

    SciTech Connect

    M Dashiell; J Beausang; H Ehsani; G Nichols; D DePoy; L Danielson; P Talamo; K Rahner; E Brown; S Burger; P Fourspring; W Topper; P Baldasaro; C Wang; R Huang; M Connors; G Turner; Z Shellenbarger; G Taylor; Jizhong Li; R Martinelli; D Donetski; S Anikeev; G Belenky; S Luryl

    2005-01-26

    Thermophotovoltaic (TPV) diodes fabricated from InGaAsSb alloys lattice-matched to GaSb substrates are grown by Metal Organic Vapor Phase Epitaxy (MOVPE). 0.53eV InGaAsSb TPV diodes utilizing front-surface spectral control filters have been tested in a vacuum cavity and a TPV thermal-to-electric conversion efficiency ({eta}{sub TPV}) and a power density (PD) of {eta}{sub TPV} = 19% and PD=0.58 W/cm{sup 2} were measured for T{sub radiator} = 950 C and T{sub diode} = 27 C. Recombination coefficients deduced from minority carrier measurements and the theory reviewed in this article predict a practical limit to the maximum achievable conversion efficiency and power density for 0.53eV InGaAsSb TPV. The limits for the above operating temperatures are projected to be {eta}{sub TPV} = 26% and PD = 0.75 W/cm{sup 2}. These limits are extended to {eta}{sub TPV} = 30% and PD = 0.85W/cm{sup 2} if the diode active region is bounded by a reflective back surface to enable photon recycling and a two-pass optical path length. The internal quantum efficiency of the InGaAsSb TPV diode is close to the theoretically predicted limits, with the exception of short wavelength absorption in GaSb contact layers. Experiments show that the open circuit voltage of the 0.53eV InGaAsSb TPV diodes is not strongly dependent on the device architectures studied in this work where both N/P and P/N double heterostructure diodes have been grown with various acceptor and donor doping levels, having GaSb and AlGaAsSb confinement, and also partial back surface reflectors. Lattice matched InGaAsSb TPV diodes were fabricated with bandgaps ranging from 0.6 to 0.5eV without significant degradation of the open circuit voltage factor, quantum efficiency, or fill factor as the composition approached the miscibility gap. The key diode performance parameter which is limiting efficiency and power density below the theoretical limits in InGaAsSb TPV devices is the open circuit voltage. The open circuit voltages of

  2. EIS-0476: Vogtle Electric Generating Plant in Burke County, GA | Department

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    of Energy 6: Vogtle Electric Generating Plant in Burke County, GA EIS-0476: Vogtle Electric Generating Plant in Burke County, GA February 8, 2012 EIS-0476: Final Environmental Impact Statement Department of Energy Loan Guarantees for Proposed Units 3 and 4 at the Vogtle Electric Generating Plant, Burke County, GA February 25, 2014 EIS-0476: Record of Decision Department of Energy Loan Guarantees for Proposed Units 3 and 4 at the Vogtle Electric Generating Plant, Burke County, GA

  3. Dislocation related droop in InGaN/GaN light emitting diodes investigated via cathodoluminescence

    SciTech Connect

    Pozina, Galia; Ciechonski, Rafal; Bi, Zhaoxia; Samuelson, Lars; Monemar, Bo

    2015-12-21

    Today's energy saving solutions for general illumination rely on efficient white light emitting diodes (LEDs). However, the output efficiency droop experienced in InGaN based LEDs with increasing current injection is a serious limitation factor for future development of bright white LEDs. We show using cathodoluminescence (CL) spatial mapping at different electron beam currents that threading dislocations are active as nonradiative recombination centers only at high injection conditions. At low current, the dislocations are inactive in carrier recombination due to local potentials, but these potentials are screened by carriers at higher injection levels. In CL images, this corresponds to the increase of the dark contrast around dislocations with the injection (excitation) density and can be linked with droop related to the threading dislocations. Our data indicate that reduction of droop in the future efficient white LED can be achieved via a drastic reduction of the dislocation density by using, for example, bulk native substrates.

  4. Radiation resistance of GaAs-GaAlAs vertical cavity surface emitting lasers

    SciTech Connect

    Jabbour, J.; Zazoui, M.; Sun, G.C.; Bourgoin, J.C.; Gilard, O.

    2005-02-15

    The variations of the optical and electrical characteristics of a vertical cavity surface emitting laser based on GaAs quantum wells have been monitored versus irradiation with 1 MeV electrons. The results are understood by the introduction of nonradiative recombination centers in the wells whose characteristics, capture cross section for minority carriers times their introduction rate, can be determined. A similar study performed for proton irradiation shows that the results can be explained in the same way when the introduction rate of the defects is replaced by the proton energy loss into atomic collisions. These results allow us to deduce the equivalence between electron and proton irradiations: A flux of 1 proton cm{sup -2} which loses an energy E{sub nl} (eV) into atomic collisions is equivalent to a fluence of about 9x10{sup -2} E{sub nl} cm{sup -2}, 1 MeV electrons.

  5. Highly transparent ammonothermal bulk GaN substrates

    SciTech Connect

    Jiang, WK; Ehrentraut, D; Downey, BC; Kamber, DS; Pakalapati, RT; Do Yoo, H; D'Evelyn, MP

    2014-10-01

    A novel apparatus has been employed to grow ammonothermal (0001) gallium nitride (GaN) with diameters up to 2 in The crystals have been characterized by x-ray diffraction rocking-curve (XRC) analysis, optical and scanning electron microscopy (SEM), cathodoluminescence (CL), and optical spectroscopy. High crystallinity GaN with FWHM values about 20-50 arcsec and dislocation densities below 1 x 10(5) cm(-2) have been obtained. High optical transmission was achieved with an optical absorption coefficient below 1 cm(-1) at a wavelength of 450 nm. (C) 2014 Elsevier B.V. All rights reserved.

  6. GA Hot Cell D&D Closeout Report

    Office of Legacy Management (LM)

    GENERAL ATOMICS HOT CELL FACILITY DECONTAMINATION & DECOMMISSIONING PROJECT FINAL PROJECT CLOSEOUT REPORT prepared for GA HOT CELL D&D PROJECT CONTRACT NUMBERS DE-AC03-84SF11962 and DE-AC03-95SF20798 PBS VL-GA-0012 Approvals Prepared by: James Davis, III Date Project Manager, Oakland Environmental Programs Office Reviewed by: John Lee Date Deputy, Oakland Environmental Programs Office Approved by: Laurence McEwen Date Acting Director, Oakland Environmental Programs Office General Atomics

  7. Graphene/GaN diodes for ultraviolet and visible photodetectors

    SciTech Connect

    Lin, Fang; Chen, Shao-Wen; Meng, Jie; Tse, Geoffrey; Fu, Xue-Wen; Xu, Fu-Jun [State Key Laboratory for Mesoscopic Physics, Department of Physics, Peking University, Beijing 100871 (China); Shen, Bo; Liao, Zhi-Min, E-mail: liaozm@pku.edu.cn, E-mail: yudp@pku.edu.cn; Yu, Da-Peng, E-mail: liaozm@pku.edu.cn, E-mail: yudp@pku.edu.cn [State Key Laboratory for Mesoscopic Physics, Department of Physics, Peking University, Beijing 100871 (China); Collaborative Innovation Center of Quantum Matter, Beijing (China)

    2014-08-18

    The Schottky diodes based on graphene/GaN interface are fabricated and demonstrated for the dual-wavelength photodetection of ultraviolet (UV) and green lights. The physical mechanisms of the photoelectric response of the diodes with different light wavelengths are different. For UV illumination, the photo-generated carriers lower the Schottky barrier and increase the photocurrent. For green light illumination, as the photon energy is smaller than the bandgap of GaN, the hot electrons excited in graphene via internal photoemission are responsible for the photoelectric response. Using graphene as a transparent electrode, the diodes show a ?mS photoresponse, providing an alternative route toward multi-wavelength photodetectors.

  8. Simple intrinsic defects in GaAs : numerical supplement.

    SciTech Connect

    Schultz, Peter Andrew

    2012-04-01

    This Report presents numerical tables summarizing properties of intrinsic defects in gallium arsenide, GaAs, as computed by density functional theory. This Report serves as a numerical supplement to the results published in: P.A. Schultz and O.A. von Lilienfeld, 'Simple intrinsic defects in GaAs', Modelling Simul. Mater. Sci Eng., Vol. 17, 084007 (2009), and intended for use as reference tables for a defect physics package in device models. The numerical results for density functional theory calculations of properties of simple intrinsic defects in gallium arsenide are presented.

  9. Electronic contribution to friction on GaAs

    SciTech Connect

    Applied Science and Technology Graduate Group, UC Berkeley; Dept. of Materials Sciences and Engineering, UC Berkeley; Salmeron, Miquel; Qi, Yabing; Park, J.Y.; Hendriksen, B.L.M.; Ogletree, D.F.; Salmeron, Miquel

    2008-04-15

    The electronic contribution to friction at semiconductor surfaces was investigated by using a Pt-coated tip with 50nm radius in an atomic force microscope sliding against an n-type GaAs(100) substrate. The GaAs surface was covered by an approximately 1 nm thick oxide layer. Charge accumulation or depletion was induced by the application of forward or reverse bias voltages. We observed a substantial increase in friction force in accumulation (forward bias) with respect to depletion (reverse bias). We propose a model based on the force exerted by the trapped charges that quantitatively explains the experimental observations of excess friction.

  10. Polycrystalline MBE-grown GaAs for solar cells

    SciTech Connect

    Friedman, D.J.; Kurtz, S.R.; Kibbler, A.E.; Al-Jassim, M.; Jones, K.; Keyes, B.; Matson, R.

    1997-02-01

    This paper will discuss initial studies of thin-film GaAs grown by molecular-beam epitaxy for use in developing a thin-film GaAs solar cell. Photocurrent and photoluminescence intensity are related to the material morphology as a function of growth conditions. Growth temperature and V/III ratio have a dramatic effect on the photocurrent. However, it seems likely that even after optimizing such growth parameters, it will be necessary to provide substrates that can provide templates to enhance grain size from the start of thin-film growth. {copyright} {ital 1997 American Institute of Physics.}

  11. Polycrystalline MBE-grown GaAs for solar cells

    SciTech Connect

    Friedman, D. J.; Kurtz, Sarah R.; Kibbler, A. E.; Al-Jassim, M.; Jones, K.; Keyes, B.; Matson, R.

    1997-02-15

    This paper will discuss initial studies of thin-film GaAs grown by molecular-beam epitaxy for use in developing a thin-film GaAs solar cell. Photocurrent and photoluminescence intensity are related to the material morphology as a function of growth conditions. Growth temperature and V/III ratio have a dramatic effect on the photocurrent. However, it seems likely that even after optimizing such growth parameters, it will be necessary to provide substrates that can provide templates to enhance grain size from the start of thin-film growth.

  12. Influence of Ga content on the structure and anomalous Hall effect of Fe{sub 1−x}Ga{sub x} thin films on GaSb(100)

    SciTech Connect

    Anh Tuan, Duong; Shin, Yooleemi; Viet Cuong, Tran; Cho, Sunglae; Phan, The-Long

    2014-05-07

    The Fe{sub 1−x}Ga{sub x} thin films (x = 0.4, 0.5) have been grown on GaSb(100) substrate using molecular beam epitaxy. An epitaxial film with bcc α-Fe crystal structure (A2) is observed in Fe{sub 0.6}Ga{sub 0.4} film, while an impure Fe{sub 3}Ga phase with DO{sub 3} structure is appeared in Fe{sub 0.5}Ga{sub 0.5} film. The saturated magnetizations at room temperature are observed to be 570 emu/cm{sup 3} and 180 emu/cm{sup 3} and the coercivities to be 170 and 364 Oe for Fe{sub 0.6}Ga{sub 0.4} and Fe{sub 0.5}Ga{sub 0.5}, respectively. A hysteresis trend in Hall resistance vs. magnetic field is observed for Fe{sub 0.5}Ga{sub 0.5} film. However, there is a weak hysteresis noticed in Fe{sub 0.4}Ga{sub 0.6} thin film.

  13. Terahertz intersubband absorption in non-polar m-plane AlGaN/GaN quantum wells

    SciTech Connect

    Edmunds, C.; Malis, O.; Shao, J.; Shirazi-HD, M.; Manfra, M. J.

    2014-07-14

    We demonstrate THz intersubband absorption (15.6–26.1 meV) in m-plane AlGaN/GaN quantum wells. We find a trend of decreasing peak energy with increasing quantum well width, in agreement with theoretical expectations. However, a blue-shift of the transition energy of up to 14 meV was observed relative to the calculated values. This blue-shift is shown to decrease with decreasing charge density and is, therefore, attributed to many-body effects. Furthermore, a ∼40% reduction in the linewidth (from roughly 8 to 5 meV) was obtained by reducing the total sheet density and inserting undoped AlGaN layers that separate the wavefunctions from the ionized impurities in the barriers.

  14. Inversion-mode GaAs wave-shaped field-effect transistor on GaAs (100) substrate

    SciTech Connect

    Zhang, Jingyun; Si, Mengwei; Wu, Heng; Ye, Peide D.; Lou, Xiabing; Gordon, Roy G.; Shao, Jiayi; Manfra, Michael J.

    2015-02-16

    Inversion-mode GaAs wave-shaped metal-oxide-semiconductor field-effect transistors (WaveFETs) are demonstrated using atomic-layer epitaxy of La{sub 2}O{sub 3} as gate dielectric on (111)A nano-facets formed on a GaAs (100) substrate. The wave-shaped nano-facets, which are desirable for the device on-state and off-state performance, are realized by lithographic patterning and anisotropic wet etching with optimized geometry. A well-behaved 1 μm gate length GaAs WaveFET shows a maximum drain current of 64 mA/mm, a subthreshold swing of 135 mV/dec, and an I{sub ON}/I{sub OFF} ratio of greater than 10{sup 7}.

  15. Fabrication and Characterization of a Single Hole Transistor in p-type GaAs/AlGaAs Heterostructures

    SciTech Connect

    Tracy, Lisa A; Reno, John L.; Hargett, Terry W.

    2015-09-01

    Most spin qubit research to date has focused on manipulating single electron spins in quantum dots. However, hole spins are predicted to have some advantages over electron spins, such as reduced coupling to host semiconductor nuclear spins and the ability to control hole spins electrically using the large spin-orbit interaction. Building on recent advances in fabricating high-mobility 2D hole systems in GaAs/AlGaAs heterostructures at Sandia, we fabricate and characterize single hole transistors in GaAs. We demonstrate p-type double quantum dot devices with few-hole occupation, which could be used to study the physics of individual hole spins and control over coupling between hole spins, looking towards eventual applications in quantum computing. Intentionally left blank

  16. Strong enhancement of terahertz emission from GaAs in InAs/GaAs quantum dot structures

    SciTech Connect

    Estacio, Elmer; Pham, Minh Hong; Takatori, Satoru; Cadatal-Raduban, Marilou; Nakazato, Tomoharu; Shimizu, Toshihiko; Sarukura, Nobuhiko; Somintac, Armando; Defensor, Michael; Awitan, Fritz Christian B.; Jaculbia, Rafael B.; Salvador, Arnel; Garcia, Alipio

    2009-06-08

    We report on the intense terahertz emission from InAs/GaAs quantum dot (QD) structures grown by molecular beam epitaxy. Results reveal that the QD sample emission was as high as 70% of that of a p-type InAs wafer, the most intense semiconductor emitter to date. Excitation wavelength studies showed that the emission was due to absorption in strained undoped GaAs, and corresponds to a two order-of-magnitude enhancement. Moreover, it was found that multilayer QDs emit more strongly compared with a single layer QD sample. At present, we ascribe the intense radiation to huge strain fields at the InAs/GaAs interface.

  17. Characteristics of InGaP/InGaAs pseudomorphic high electron mobility transistors with triple delta-doped sheets

    SciTech Connect

    Chu, Kuei-Yi; Chiang, Meng-Hsueh Cheng, Shiou-Ying; Liu, Wen-Chau

    2012-02-15

    Fundamental and insightful characteristics of InGaP/InGaAs double channel pseudomorphic high electron mobility transistors (DCPHEMTs) with graded and uniform triple {delta}-doped sheets are coomprehensively studied and demonstrated. To gain physical insight, band diagrams, carrier densities, and direct current characteristics of devices are compared and investigated based on the 2D semiconductor simulator, Atlas. Due to uniform carrier distribution and high electron density in the double InGaAs channel, the DCPHEMT with graded triple {delta}-doped sheets exhibits better transport properties, higher and linear transconductance, and better drain current capability as compared with the uniformly triple {delta}-doped counterpart. The DCPHEMT with graded triple {delta}-doped structure is fabricated and tested, and the experimental data are found to be in good agreement with simulated results.

  18. High-performance broadband optical coatings on InGaN/GaN solar cells for multijunction device integration

    SciTech Connect

    Young, N. G. Farrell, R. M.; Iza, M.; Speck, J. S.; Perl, E. E.; Keller, S.; Bowers, J. E.; Nakamura, S.; DenBaars, S. P.

    2014-04-21

    We demonstrate InGaN/GaN multiple quantum well solar cells grown by metalorganic chemical vapor deposition on a bulk (0001) substrate with high-performance broadband optical coatings to improve light absorption. A front-side anti-reflective coating and a back-side dichroic mirror were designed to minimize front surface reflections across a broad spectral range and maximize rear surface reflections only in the spectral range absorbed by the InGaN, making the cells suitable for multijunction solar cell integration. Application of optical coatings increased the peak external quantum efficiency by 56% (relative) and conversion efficiency by 37.5% (relative) under 1 sun AM0 equivalent illumination.

  19. Degradation of InGaN/GaN laser diodes investigated by micro-cathodoluminescence and micro-photoluminescence

    SciTech Connect

    Meneghini, M. Carraro, S.; Meneghesso, G.; Trivellin, N.; Zanoni, E.; Rossi, F.; Salviati, G.; Schade, L.; Karunakaran, M. A.; Schwarz, U. T.

    2013-12-02

    We present an investigation of the degradation of InGaN/GaN laser diodes grown on a GaN substrate. The results indicate that: (i) Ageing induces a significant increase in the threshold current (Ith) of the lasers, which is attributed to an increase in non-radiative recombination; (ii) Ith increase is correlated to a decrease in the micro-cathodoluminescence signal measured (after the removal of the top metallization) in the region under the ridge; (iii) micro-photoluminescence measurements indicate that constant current stress increases non-radiative recombination within the quantum wells (and not only within the barriers), and induces an increase in the emission wavelength of the degraded region.

  20. Emission spectra of a laser based on an In(Ga)As/GaAs quantum-dot superlattice

    SciTech Connect

    Sobolev, M. M. Buyalo, M. S.; Nevedomskiy, V. N.; Zadiranov, Yu. M.; Zolotareva, R. V.; Vasil’ev, A. P.; Ustinov, V. M.; Portnoi, E. L.

    2015-10-15

    The spectral characteristics of a laser with an active region based on a ten-layer system of In(Ga)As/GaAs vertically correlated quantum dots with 4.5-nm GaAs spacer layers between InAs quantum dots are studied under the conditions of spontaneous and stimulated emission, depending on the current and the duration of pump pulses. Data obtained by transmission electron microscopy and electroluminescence and absorption polarization anisotropy measurements make it possible to demonstrate that the investigated system of tunnel-coupled InAs quantum dots separated by thin GaAs barriers represents a quantum-dot superlattice. With an increase in the laser pump current, the electroluminescence intensity increases linearly and the spectral position of the electroluminescence maximum shifts to higher energies, which is caused by the dependence of the miniband density-of-states distribution on the pump current. Upon exceeding the threshold current, multimode lasing via the miniband ground state is observed. One of the lasing modes can be attributed to the zero-phonon line, and the other is determined by the longitudinal-optical phonon replica of quantum-dot emission. The results obtained give evidence that, under conditions of the laser pumping of an In(Ga)As/GaAs quantum-dot superlattice, strong coupling between the discrete electron states in the miniband and optical phonons takes place. This leads to the formation of quantum-dot polarons, resulting from the resonant mixing of electronic states whose energy separation is comparable to the optical-phonon energy.