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Sample records for facility gan m1

  1. AMIE Gan Island Ancillary Disdrometer Field Campaign Report (Program

    Office of Scientific and Technical Information (OSTI)

    Document) | SciTech Connect AMIE Gan Island Ancillary Disdrometer Field Campaign Report Citation Details In-Document Search Title: AMIE Gan Island Ancillary Disdrometer Field Campaign Report As part of the U.S. Department of Energy (DOE)'s Atmospheric Radiation Measurement Climate Research Facility (ARM) Madden-Julian Oscillation (MJO) Investigation Experiment (AMIE), in January 2012 a disdrometer observation took place with the second ARM Mobile Facility (AMF2), the Scanning ARM Cloud Radar

  2. Facilities

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    Facilities Facilities World-class facilities provide unique problem-solving opportunities. Unique research facilities support data-driven, agile solutions. Los Alamos National Laboratory has a number of facilities that support work related to sensor technologies and solutions including: Center for Integrated Nanotechnologies Dual-Axis Radiographic Hydrodynamic Test Facility The Explosives Center Lujan Neutron Scattering Center Materials Science Laboratory National High Magnetic Field Laboratory

  3. Facilities

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    Nuclear Energy Defense Waste Management Programs Advanced Nuclear Energy Nuclear Energy Safety Technologies Facilities Battery Abuse Testing Laboratory Cylindrical Boiling Facility ...

  4. ARM MJO Investigation Experiment on Gan Island (AMIE-Gan) Science Plan

    SciTech Connect (OSTI)

    Long, CL; Del Genio, A; Deng, M; Fu, X; Gustafson, W; Houze, R; Jakob, C; Jensen, M; Johnson, R; Liu, X; Luke, E; May, P; McFarlane, S; Minnis, P; Schumacher, C; Vogelmann, A; Wang, Y; Webster, P; Xie, S; Zhang, C

    2011-04-11

    The overarching campaign, which includes the ARM Mobile Facility 2 (AMF2) deployment in conjunction with the Dynamics of the Madden-Julian Oscillation (DYNAMO) and the Cooperative Indian Ocean experiment on intraseasonal variability in the Year 2011 (CINDY2011) campaigns, is designed to test several current hypotheses regarding the mechanisms responsible for Madden-Julian Oscillation (MJO) initiation and propagation in the Indian Ocean area. The synergy between the proposed AMF2 deployment with DYNAMO/CINDY2011, and the corresponding funded experiment on Manus, combine for an overarching ARM MJO Investigation Experiment (AMIE) with two components: AMF2 on Gan Island in the Indian Ocean (AMIE-Gan), where the MJO initiates and starts its eastward propagation; and the ARM Manus site (AMIE-Manus), which is in the general area where the MJO usually starts to weaken in climate models. AMIE-Gan will provide measurements of particular interest to Atmospheric System Research (ASR) researchers relevant to improving the representation of MJO initiation in climate models. The framework of DYNAMO/CINDY2011 includes two proposed island-based sites and two ship-based locations forming a square pattern with sonde profiles and scanning precipitation and cloud radars at both island and ship sites. These data will be used to produce a Variational Analysis data set coinciding with the one produced for AMIE-Manus. The synergy between AMIE-Manus and AMIE-Gan will allow studies of the initiation, propagation, and evolution of the convective cloud population within the framework of the MJO. As with AMIE-Manus, AMIE-Gan/DYNAMO also includes a significant modeling component geared toward improving the representation of MJO initiation and propagation in climate and forecast models. This campaign involves the deployment of the second, marine-capable, AMF; all of the included measurement systems; and especially the scanning and vertically pointing radars. The campaign will include sonde

  5. M 1 Partners | Open Energy Information

    Open Energy Information (Open El) [EERE & EIA]

    Partners Jump to: navigation, search Name: M-1 Partners Place: New York Product: M-1 Partners is a joint venture between Peter Marshall and Robert Ott with the objective of...

  6. Mobile Facility

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    govSitesMobile Facility AMF Information Science Architecture Baseline Instruments AMF1 AMF2 AMF3 MAOS AMF Fact Sheet Images Contacts AMF Deployments McMurdo Station, Antarctica, 2015-2016 Pearl Harbor, Hawaii, to San Francisco, California, 2015 Hyytiälä, Finland, 2014 Manacapuru, Brazil, 2014 Oliktok Point, Alaska, 2013 Los Angeles, California, to Honolulu, Hawaii, 2012 Cape Cod, Massachusetts, 2012 Gan Island, Maldives, 2011 Ganges Valley, India, 2011 Steamboat Springs, Colorado, 2010

  7. Facilities

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    ... It also provides an outstanding controlled environment for Sandia's recent spent nuclear fuel combustion experiments. HPC Facilities CSRIBldghomepg The Computer Science Research ...

  8. Facilities

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    First Power for SWiFT Turbine Achieved during Recommissioning Facilities, News, Renewable Energy, SWIFT, Wind Energy, Wind News First Power for SWiFT Turbine Achieved during ...

  9. ARM - VAP Product - visstpx08m1rv4minnis

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    8m1rv4minnis Documentation visst : XDC documentation Data Management Facility Plots (Quick Looks) ARM Data Discovery Browse Data Comments? We would love to hear from you! Send us a note below or call us at 1-888-ARM-DATA. Send VAP Output : VISSTPX08M1RV4MINNIS VISST-derived pixel-level products from satellite MTSAT, version 4 Active Dates 2008.05.01 - 2008.12.31 Originating VAP Process Minnis Cloud Products Using Visst Algorithm : VISST Measurements The measurements below provided by this

  10. ARM - VAP Product - visstpx04m1rv3minnis

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    rv3minnis Documentation visst : XDC documentation Data Management Facility Plots (Quick Looks) ARM Data Discovery Browse Data Comments? We would love to hear from you! Send us a note below or call us at 1-888-ARM-DATA. Send VAP Output : VISSTPX04M1RV3MINNIS VISST-derived pixel-level products from satellite MTSAT, version 3 Active Dates 2007.10.01 - 2007.12.31

  11. ARM - VAP Product - visstpx04m1rv4minnis

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    rv4minnis Documentation visst : XDC documentation Data Management Facility Plots (Quick Looks) ARM Data Discovery Browse Data Comments? We would love to hear from you! Send us a note below or call us at 1-888-ARM-DATA. Send VAP Output : VISSTPX04M1RV4MINNIS VISST-derived pixel-level products from satellite MTSAT, version 4 Active Dates 2008.01.01 - 2008.04.30

  12. ARM - VAP Product - visstpx04m1rv1minnis

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    rv1minnis Documentation visst : XDC documentation Data Management Facility Plots (Quick Looks) ARM Data Discovery Browse Data Comments? We would love to hear from you! Send us a note below or call us at 1-888-ARM-DATA. Send VAP Output : VISSTPX04M1RV1MINNIS VISST-derived pixel-level products from satellite MTSAT, version 1 Active Dates 2006.01.01 - 2006.02.28 Originating VAP Process Minnis Cloud Products Using Visst Algorithm : VISST Measurements The measurements below provided by this product

  13. ARM - AMIE Gan Island - Data Plots

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    Gan Related Links amie.png 34h AMIE Home cindy.png 50h CINDY2011 dynamo.png 34h DYNAMO ARM Data Discovery Browse Data Outreach News & Press Blog Backgrounder (PDF, 1.2MB) Education Flyer (PDF, 2.0MB) Images ARM flickr site Official AMIE Logo AMIE Gear Experiment Planning Steering Committee AMIE-MANUS Proposal Abstract AMIE-GAN Proposal Abstract Meetings Cloud Life Cycle Working Group Deployment Operations Science Plan - TWP Manus Site (PDF, 2.1 MB) Science Plan - Gan Island Site (PDF, 2.0

  14. Facility Floorplan

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    facility floorplan Facility Floorplan

  15. ARM - News from the Gan Island Deployment

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    News from the Gan Island Deployment Related Links amie.png 34h AMIE Home cindy.png 50h CINDY2011 dynamo.png 34h DYNAMO ARM Data Discovery Browse Data Outreach News & Press Blog Backgrounder (PDF, 1.2MB) Education Flyer (PDF, 2.0MB) Images ARM flickr site Official AMIE Logo AMIE Gear Experiment Planning Steering Committee AMIE-MANUS Proposal Abstract AMIE-GAN Proposal Abstract Meetings Cloud Life Cycle Working Group Deployment Operations Science Plan - TWP Manus Site (PDF, 2.1 MB) Science

  16. Observation of 690 MV m^-1 Electron Accelerating Gradient with...

    Office of Scientific and Technical Information (OSTI)

    Observation of 690 MV m-1 Electron Accelerating Gradient with a Laser-Driven Dielectric Microstructure Citation Details In-Document Search Title: Observation of 690 MV m-1...

  17. Mission hazard assessment for STARS Mission 1 (M1) in the Marshall Islands area

    SciTech Connect (OSTI)

    Outka, D.E.; LaFarge, R.A.

    1993-07-01

    A mission hazard assessment has been performed for the Strategic Target System Mission 1 (known as STARS M1) for hazards due to potential debris impact in the Marshall Islands area. The work was performed at Sandia National Laboratories as a result of discussion with Kwajalein Missile Range (KMR) safety officers. The STARS M1 rocket will be launched from the Kauai Test Facility (KTF), Hawaii, and deliver two payloads to within the viewing range of sensors located on the Kwajalein Atoll. The purpose of this work has been to estimate upper bounds for expected casualty rates and impact probability or the Marshall Islands areas which adjoin the STARS M1 instantaneous impact point (IIP) trace. This report documents the methodology and results of the analysis.

  18. GaN: Defect and Device Issues

    SciTech Connect (OSTI)

    Pearton, S.J.; Ren, F.; Shul, R.J.; Zolper, J.C.

    1998-11-09

    The role of extended and point defects, and key impurities such as C, O and H, on the electrical and optical properties of GaN is reviewed. Recent progress in the development of high reliability contacts, thermal processing, dry and wet etching techniques, implantation doping and isolation and gate insulator technology is detailed. Finally, the performance of GaN-based electronic and photonic devices such as field effect transistors, UV detectors, laser diodes and light-emitting diodes is covered, along with the influence of process-induced or grown-in defects and impurities on the device physics.

  19. ARM - Field Campaign - AMIE-Gan Ancillary Disdrometer

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    would love to hear from you Send us a note below or call us at 1-888-ARM-DATA. Send Campaign : AMIE-Gan Ancillary Disdrometer 2012.01.01 - 2012.02.10 Lead Scientist : Mariko Oue...

  20. Ge doped GaN with controllable high carrier concentration for...

    Office of Scientific and Technical Information (OSTI)

    Ge doped GaN with controllable high carrier concentration for plasmonic applications Citation Details In-Document Search Title: Ge doped GaN with controllable high carrier...

  1. High Voltage GaN Schottky Rectifiers

    SciTech Connect (OSTI)

    CAO,X.A.; CHO,H.; CHU,S.N.G.; CHUO,C.-C.; CHYI,J.-I.; DANG,G.T.; HAN,JUNG; LEE,C.-M.; PEARTON,S.J.; REN,F.; WILSON,R.G.; ZHANG,A.P.

    1999-10-25

    Mesa and planar GaN Schottky diode rectifiers with reverse breakdown voltages (V{sub RB}) up to 550V and >2000V, respectively, have been fabricated. The on-state resistance, R{sub ON}, was 6m{Omega}{center_dot} cm{sup 2} and 0.8{Omega}cm{sup 2}, respectively, producing figure-of-merit values for (V{sub RB}){sup 2}/R{sub ON} in the range 5-48 MW{center_dot}cm{sup -2}. At low biases the reverse leakage current was proportional to the size of the rectifying contact perimeter, while at high biases the current was proportional to the area of this contact. These results suggest that at low reverse biases, the leakage is dominated by the surface component, while at higher biases the bulk component dominates. On-state voltages were 3.5V for the 550V diodes and {ge}15 for the 2kV diodes. Reverse recovery times were <0.2{micro}sec for devices switched from a forward current density of {approx}500A{center_dot}cm{sup -2} to a reverse bias of 100V.

  2. Conductivity based on selective etch for GaN devices and applications thereof

    SciTech Connect (OSTI)

    Zhang, Yu; Sun, Qian; Han, Jung

    2015-12-08

    This invention relates to methods of generating NP gallium nitride (GaN) across large areas (>1 cm.sup.2) with controlled pore diameters, pore density, and porosity. Also disclosed are methods of generating novel optoelectronic devices based on porous GaN. Additionally a layer transfer scheme to separate and create free-standing crystalline GaN thin layers is disclosed that enables a new device manufacturing paradigm involving substrate recycling. Other disclosed embodiments of this invention relate to fabrication of GaN based nanocrystals and the use of NP GaN electrodes for electrolysis, water splitting, or photosynthetic process applications.

  3. Highly transparent ammonothermal bulk GaN substrates

    SciTech Connect (OSTI)

    Jiang, WK; Ehrentraut, D; Downey, BC; Kamber, DS; Pakalapati, RT; Do Yoo, H; D'Evelyn, MP

    2014-10-01

    A novel apparatus has been employed to grow ammonothermal (0001) gallium nitride (GaN) with diameters up to 2 in The crystals have been characterized by x-ray diffraction rocking-curve (XRC) analysis, optical and scanning electron microscopy (SEM), cathodoluminescence (CL), and optical spectroscopy. High crystallinity GaN with FWHM values about 20-50 arcsec and dislocation densities below 1 x 10(5) cm(-2) have been obtained. High optical transmission was achieved with an optical absorption coefficient below 1 cm(-1) at a wavelength of 450 nm. (C) 2014 Elsevier B.V. All rights reserved.

  4. Ferromagnetism in undoped One-dimensional GaN Nanowires

    SciTech Connect (OSTI)

    Jeganathan, K. E-mail: jagan@physics.bdu.ac.in; Purushothaman, V.; Debnath, R.; Arumugam, S.

    2014-05-15

    We report an intrinsic ferromagnetism in vertical aligned GaN nanowires (NW) fabricated by molecular beam epitaxy without any external catalyst. The magnetization saturates at ?0.75 emu/gm with the applied field of 3000 Oe for the NWs grown under the low-Gallium flux of 2.4 10{sup ?8} mbar. Despite a drop in saturation magnetization, narrow hysteresis loop remains intact regardless of Gallium flux. Magnetization in vertical standing GaN NWs is consistent with the spectral analysis of low-temperature photoluminescence pertaining to Ga-vacancies associated structural defects at the nanoscale.

  5. AMIE Gan Island Ancillary Disdrometer Field Campaign...

    Office of Scientific and Technical Information (OSTI)

    Ancillary Disdrometer Field Campaign Report M Oue April 2016 CLIMATE RESEARCH FACILITY DISCLAIMER This report was prepared as an account of work sponsored by the U.S. Government. ...

  6. Properties of H, O and C in GaN

    SciTech Connect (OSTI)

    Pearton, S.J.; Abernathy, C.R.; Lee, J.W.

    1996-04-01

    The electrical properties of the light ion impurities H, O and C in GaN have been examined in both as-grown and implanted material. H is found to efficiently passivate acceptors such as Mg, Ca and C. Reactivation occurs at {ge} 450 C and is enhanced by minority carrier injection. The hydrogen does not leave the GaN crystal until > 800 C, and its diffusivity is relatively high ({approximately} 10{sup {minus}11} cm{sup 2}/s) even at low temperatures (< 200 C) during injection by wet etching, boiling in water or plasma exposure. Oxygen shows a low donor activation efficiency when implanted into GaN, with an ionization level of 30--40 meV. It is essentially immobile up to 1,100 C. Carbon can produce low p-type levels (3 {times} 10{sup 17} cm{sup {minus}3}) in GaN during MOMBE, although there is some evidence it may also create n-type conduction in other nitrides.

  7. Refractive index of erbium doped GaN thin films

    SciTech Connect (OSTI)

    Alajlouni, S.; Sun, Z. Y.; Li, J.; Lin, J. Y.; Jiang, H. X.; Zavada, J. M.

    2014-08-25

    GaN is an excellent host for erbium (Er) to provide optical emission in the technologically important as well as eye-safe 1540 nm wavelength window. Er doped GaN (GaN:Er) epilayers were synthesized on c-plane sapphire substrates using metal organic chemical vapor deposition. By employing a pulsed growth scheme, the crystalline quality of GaN:Er epilayers was significantly improved over those obtained by conventional growth method of continuous flow of reaction precursors. X-ray diffraction rocking curve linewidths of less than 300 arc sec were achieved for the GaN (0002) diffraction peak, which is comparable to the typical results of undoped high quality GaN epilayers and represents a major improvement over previously reported results for GaN:Er. Spectroscopic ellipsometry was used to determine the refractive index of the GaN:Er epilayers in the 1540 nm wavelength window and a linear dependence on Er concentration was found. The observed refractive index increase with Er incorporation and the improved crystalline quality of the GaN:Er epilayers indicate that low loss GaN:Er optical waveguiding structures are feasible.

  8. Structural defects in GaN revealed by Transmission Electron Microscopy

    DOE PAGES-Beta [OSTI]

    Liliental-Weber, Zuzanna

    2014-09-08

    This paper reviews the various types of structural defects observed by Transmission Electron Microscopy in GaN heteroepitaxial layers grown on foreign substrates and homoepitaxial layers grown on bulk GaN substrates. The structural perfection of these layers is compared to the platelet self-standing crystals grown by High Nitrogen Pressure Solution. Defects in undoped and Mg doped GaN are discussed. Lastly, some models explaining the formation of inversion domains in heavily Mg doped layers that are possible defects responsible for the difficulties of p-doping in GaN are also reviewed.

  9. Structural defects in GaN revealed by Transmission Electron Microscopy

    SciTech Connect (OSTI)

    Liliental-Weber, Zuzanna

    2014-04-18

    This paper reviews the various types of structural defects observed by Transmission Electron Microscopy in GaN heteroepitaxial layers grown on foreign substrates and homoepitaxial layers grown on bulk GaN substrates. The structural perfection of these layers is compared to the platelet self-standing crystals grown by High Nitrogen Pressure Solution. Defects in undoped and Mg doped GaN are discussed. Some models explaining the formation of inversion domains in heavily Mg doped layers that are possible defects responsible for the difficulties of p-doping in GaN are also reviewed.

  10. Dislocation core structures in Si-doped GaN

    SciTech Connect (OSTI)

    Rhode, S. L. Fu, W. Y.; Sahonta, S.-L.; Kappers, M. J.; Humphreys, C. J.; Horton, M. K.; Pennycook, T. J.; Dusane, R. O.; Moram, M. A.

    2015-12-14

    Aberration-corrected scanning transmission electron microscopy was used to investigate the core structures of threading dislocations in plan-view geometry of GaN films with a range of Si-doping levels and dislocation densities ranging between (5 ± 1) × 10{sup 8} and (10 ± 1) × 10{sup 9} cm{sup −2}. All a-type (edge) dislocation core structures in all samples formed 5/7-atom ring core structures, whereas all (a + c)-type (mixed) dislocations formed either double 5/6-atom, dissociated 7/4/8/4/9-atom, or dissociated 7/4/8/4/8/4/9-atom core structures. This shows that Si-doping does not affect threading dislocation core structures in GaN. However, electron beam damage at 300 keV produces 4-atom ring structures for (a + c)-type cores in Si-doped GaN.

  11. Laser Facilities

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    Laser Facilities Current Schedule of Experiments Operation Schedule Janus Titan Europa COMET Facility Floorplan

  12. Nuclear Facilities Production Facilities

    National Nuclear Security Administration (NNSA)

    Facilities Production Facilities Sandia National Laboratories is a multi-program laboratory managed and operated by Sandia Corporation, a wholly owned subsidiary of Lockheed Martin Corporation, for the U.S. Department of Energy's National Nuclear Security Administration under contract DE-AC04-94AL85000. Sand 2011-4582P. ENERGY U.S. DEPARTMENT OF Gamma Irradiation Facility (GIF) The GIF provides test cells for the irradiation of experiments with high-intensity gamma ray sources. The main features

  13. Preparation and characterization of one-dimensional GaN nanorods with Tb intermediate layer

    SciTech Connect (OSTI)

    Shi, Feng; Xue, Chengshan

    2012-12-15

    Graphical abstract: Display Omitted Highlights: ► GaN nanorods have been prepared on Si substrates by magnetron sputtering. ► GaN nanorods are single crystal with hexagonal wurtzite structure. ► GaN nanorods are high-quality crystalline after ammoniating at 950 °C for 15 min. ► Ammoniating temperatures and times affect the growth of GaN nanorods significantly. -- Abstract: GaN nanorods have been successfully prepared on Si(1 1 1) substrates by magnetron sputtering through ammoniating Ga{sub 2}O{sub 3}/Tb thin films. X-ray diffraction (XRD), X-ray photoelectron spectroscope (XPS), FT-IR spectrophotometer, scanning electron microscope (SEM), high-resolution transmission electron microscope (HRTEM), and photoluminescence (PL) spectroscopy were used to characterize the microstructures, morphologies compositions and optical properties of the GaN samples. The results demonstrate that the nanorods are single crystal GaN with hexagonal wurtzite structure and high-quality crystalline after ammoniating at 950 °C for 15 min, which have the size of 100–150 nm in diameter. Ammoniating temperatures and times affect the growth of GaN nanorods significantly. The growth procedure mainly follows the Tb catalyst-assisted VLS mechanism.

  14. ARM - SGP Extended Facility

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    Extended Facility SGP Related Links Virtual Tour Facilities and Instruments Central Facility Boundary Facility Extended Facility Intermediate Facility Radiometric Calibration...

  15. ARM - SGP Intermediate Facility

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    Intermediate Facility SGP Related Links Virtual Tour Facilities and Instruments Central Facility Boundary Facility Extended Facility Intermediate Facility Radiometric Calibration...

  16. ARM - SGP Central Facility

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    Central Facility SGP Related Links Virtual Tour Facilities and Instruments Central Facility Boundary Facility Extended Facility Intermediate Facility Radiometric Calibration...

  17. Huntington Resource Recovery Facility Biomass Facility | Open...

    Open Energy Information (Open El) [EERE & EIA]

    Resource Recovery Facility Biomass Facility Jump to: navigation, search Name Huntington Resource Recovery Facility Biomass Facility Facility Huntington Resource Recovery Facility...

  18. Wheelabrator Sherman Energy Facility Biomass Facility | Open...

    Open Energy Information (Open El) [EERE & EIA]

    Sherman Energy Facility Biomass Facility Jump to: navigation, search Name Wheelabrator Sherman Energy Facility Biomass Facility Facility Wheelabrator Sherman Energy Facility Sector...

  19. This invention relates to methods of generating NP gallium nitride (GaN) across large areas (>1 cm.sup.2) with controlled pore diameters, pore density, and porosity. Also disclosed are methods of generating novel optoelectronic devices based on porous GaN. Additionally a layer transfer scheme to separate and create free-standing crystalline GaN thin layers is disclosed that enables a new device manufacturing paradigm involving substrate recycling. Other disclosed embodiments of this invention relate to fabrication of GaN based nanocrystals and the use of NP GaN electrodes for electrolysis, water splitting, or photosynthetic process applications.

    DOE Patents [OSTI]

    Zhang, Yu; Sun, Qian; Han, Jung

    2015-12-08

    This invention relates to methods of generating NP gallium nitride (GaN) across large areas (>1 cm.sup.2) with controlled pore diameters, pore density, and porosity. Also disclosed are methods of generating novel optoelectronic devices based on porous GaN. Additionally a layer transfer scheme to separate and create free-standing crystalline GaN thin layers is disclosed that enables a new device manufacturing paradigm involving substrate recycling. Other disclosed embodiments of this invention relate to fabrication of GaN based nanocrystals and the use of NP GaN electrodes for electrolysis, water splitting, or photosynthetic process applications.

  20. Ashton Extended Facility

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    Ashton Extended Facility Map

  1. Byron Extended Facility

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    Byron Extended Facility Map

  2. Dislocation confinement in the growth of Na flux GaN on metalorganic...

    Office of Scientific and Technical Information (OSTI)

    Dislocation confinement in the growth of Na flux GaN on metalorganic chemical vapor deposition-GaN Citation Details In-Document Search Title: Dislocation confinement in the growth ...

  3. Growth and Band Offsets of Epitaxial Lanthanide Oxides on GaN...

    Office of Scientific and Technical Information (OSTI)

    M.T.T., 60 (6) (2012) 3 Jon Ihlefeld, Sandia National Laboratories Electronic Materials ... Undoped GaN Undoped AlGaN Doped AlGaN 2D Electron Gas Enhancement Mode (nominally ...

  4. User Facilities

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    User Facilities User Facilities User facility agreements allow Los Alamos partners and other entities to conduct research at our unique facilities. In 2011, LANL hosted more than 1,200 users at CINT, LANSCE, and NHMFL. Users came from across the DOE complex, from international academia, and from industrial companies from 45 states across the U.S. Unique world-class user facilities foster rich research opportunities Through its technology transfer efforts, LANL can implement user facility

  5. Evolution of deep centers in GaN grown by hydride vapor phaseepitaxy

    SciTech Connect (OSTI)

    Fang, Z.-Q.; Look, D.C.; Jasinski, J.; Benamara, M.; Liliental-Weber, Z.; Molnar, R.J.

    2001-04-18

    Deep centers and dislocation densities in undoped n GaN, grown by hydride vapor phase epitaxy (HVPE), were characterized as a function of the layer thickness by deep level transient spectroscopy and transmission electron microscopy, respectively. As the layer thickness decreases, the variety and concentration of deep centers increase, in conjunction with the increase of dislocation density. Based on comparison with electron irradiation induced centers, some dominant centers in HVPE GaN are identified as possible point defects.

  6. Continuous and Dynamic Lasing Tuning of Single GaN Nanowires with

    Office of Scientific and Technical Information (OSTI)

    sub-nanometer resolution using Hydrostatic Pressure. (Conference) | SciTech Connect Continuous and Dynamic Lasing Tuning of Single GaN Nanowires with sub-nanometer resolution using Hydrostatic Pressure. Citation Details In-Document Search Title: Continuous and Dynamic Lasing Tuning of Single GaN Nanowires with sub-nanometer resolution using Hydrostatic Pressure. Abstract not provided. Authors: Liu, Sheng ; Brener, Igal ; Wang, George T. ; Li, Changyi ; Brueck, Steven R. J. Publication Date:

  7. User Facilities

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    Collaboration User Facilities collaborationassetsimagesicon-collaboration.jpg User Facilities A new research frontier awaits Our door is open and we thrive on mutually...

  8. Low temperature thin film transistors with hollow cathode plasma-assisted atomic layer deposition based GaN channels

    SciTech Connect (OSTI)

    Bolat, S. E-mail: aokyay@ee.bilkent.edu.tr; Tekcan, B.; Ozgit-Akgun, C.; Biyikli, N.; Okyay, A. K. E-mail: aokyay@ee.bilkent.edu.tr

    2014-06-16

    We report GaN thin film transistors (TFT) with a thermal budget below 250?C. GaN thin films are grown at 200?C by hollow cathode plasma-assisted atomic layer deposition (HCPA-ALD). HCPA-ALD-based GaN thin films are found to have a polycrystalline wurtzite structure with an average crystallite size of 9.3?nm. TFTs with bottom gate configuration are fabricated with HCPA-ALD grown GaN channel layers. Fabricated TFTs exhibit n-type field effect characteristics. N-channel GaN TFTs demonstrated on-to-off ratios (I{sub ON}/I{sub OFF}) of 10{sup 3} and sub-threshold swing of 3.3?V/decade. The entire TFT device fabrication process temperature is below 250?C, which is the lowest process temperature reported for GaN based transistors, so far.

  9. Hybrid device based on GaN nanoneedles and MEH-PPV/PEDOT:PSS polymer

    SciTech Connect (OSTI)

    Shin, Min Jeong; Gwon, Dong-Oh; Lee, Chan-Mi; Lee, Gang Seok; Jeon, In-Jun; Ahn, Hyung Soo; Yi, Sam Nyung; Ha, Dong Han

    2015-08-15

    Highlights: • A hybrid device was demonstrated by using MEH-PPV, PEDOT:PSS, and GaN nanoneedles. • I–V curve of the hybrid device showed its rectification behaviour, similar to a diode. • EL peak originated by the different potential barriers at MEH-PPV and GaN interface. - Abstract: A hybrid device that combines the properties of organic and inorganic semiconductors was fabricated and studied. It incorporated poly[2-methoxy-5-(2-ethylhexyloxy)- 1,4-phenylenevinylene] (MEH-PPV) and poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) as organic polymers and GaN nanoneedles as an inorganic semiconductor. Layers of the two polymers were spin coated on to the GaN nanoneedles. The one peak in the electroluminescence spectrum originated from the MEH-PPV layer owing to the different potential barriers of electrons and holes at its interface with the GaN nanoneedles. However, the photoluminescence spectrum showed peaks due to both GaN nanoneedles and MEH-PPV. Such hybrid structures, suitably developed, might be able to improve the efficiency of optoelectronic devices.

  10. Intrinsic polarization control in rectangular GaN nanowire lasers

    DOE PAGES-Beta [OSTI]

    Li, Changyi; Liu, Sheng; Luk, Ting S.; Figiel, Jeffrey J.; Brener, Igal; Brueck, S. R. J.; Wang, George T.

    2016-02-01

    In this study, we demonstrate intrinsic, linearly polarized lasing from single GaN nanowires using cross-sectional shape control. A two-step top-down fabrication approach was employed to create straight nanowires with controllable rectangular cross-sections. A clear lasing threshold of 444kW/cm2 and a narrow spectral line width of 0.16 nm were observed under optical pumping at room temperature, indicating the onset of lasing. The polarization was along the short dimension (y-direction) of the nanowire due to the higher transverse confinement factors for y-polarized transverse modes resulting from the rectangular nanowire cross-section. The results show that cross-sectioned shape control can enable inherent control overmore » the polarization of nanowire lasers without additional environment requirements, such as placement onto lossy substrates.« less

  11. Size dictated thermal conductivity of GaN

    DOE PAGES-Beta [OSTI]

    Thomas Edwin Beechem; McDonald, Anthony E.; Fuller, Elliot James; Talin, Albert Alec; Rost, Christina M.; Maria, Jon -Paul; Gaskins, John T.; Hopkins, Patrick E.; Allerman, Andrew A.

    2016-04-01

    The thermal conductivity on n- and p-type doped gallium nitride (GaN) epilayers having thickness of 3-4 μm was investigated using time domain thermoreflectance (TDTR). Despite possessing carrier concentrations ranging across 3 decades (1015 – 1018 cm–3), n-type layers exhibit a nearly constant thermal conductivity of 180 W/mK. The thermal conductivity of p-type epilayers, in contrast, reduces from 160 to 110 W/mK with increased doping. These trends–and their overall reduction relative to bulk–are explained leveraging established scattering models where it is shown that size effects play a primary role in limiting thermal conductivity for layers even tens of microns thick. GaNmore » device layers, even of pristine quality, will therefore exhibit thermal conductivities less than the bulk value of 240 W/mK owing to their finite thickness.« less

  12. High active nitrogen flux growth of GaN by plasma assisted molecular beam epitaxy

    SciTech Connect (OSTI)

    McSkimming, Brian M. Speck, James S.; Chaix, Catherine

    2015-09-15

    In the present study, the authors report on a modified Riber radio frequency (RF) nitrogen plasma source that provides active nitrogen fluxes more than 30 times higher than those commonly used for plasma assisted molecular beam epitaxy (PAMBE) growth of gallium nitride (GaN) and thus a significantly higher growth rate than has been previously reported. GaN films were grown using N{sub 2} gas flow rates between 5 and 25 sccm while varying the plasma source's RF forward power from 200 to 600 W. The highest growth rate, and therefore the highest active nitrogen flux, achieved was ∼7.6 μm/h. For optimized growth conditions, the surfaces displayed a clear step-terrace structure with an average RMS roughness (3 × 3 μm) on the order of 1 nm. Secondary ion mass spectroscopy impurity analysis demonstrates oxygen and hydrogen incorporation of 1 × 10{sup 16} and ∼5 × 10{sup 17}, respectively. In addition, the authors have achieved PAMBE growth of GaN at a substrate temperature more than 150 °C greater than our standard Ga rich GaN growth regime and ∼100 °C greater than any previously reported PAMBE growth of GaN. This growth temperature corresponds to GaN decomposition in vacuum of more than 20 nm/min; a regime previously unattainable with conventional nitrogen plasma sources. Arrhenius analysis of the decomposition rate shows that samples with a flux ratio below stoichiometry have an activation energy greater than decomposition of GaN in vacuum while samples grown at or above stoichiometry have decreased activation energy. The activation energy of decomposition for GaN in vacuum was previously determined to be ∼3.1 eV. For a Ga/N flux ratio of ∼1.5, this activation energy was found to be ∼2.8 eV, while for a Ga/N flux ratio of ∼0.5, it was found to be ∼7.9 eV.

  13. Facility Representatives

    Directives, Delegations, and Requirements [Office of Management (MA)]

    2011-03-01

    This standard, DOE-STD-1063, Facility Representatives, defines the duties, responsibilities and qualifications for Department of Energy (DOE) Facility Representatives, based on facility hazard classification; risks to workers, the public, and the environment; and the operational activity level. This standard provides the guidance necessary to ensure that DOE’s hazardous nuclear and non-nuclear facilities have sufficient staffing of technically qualified facility representatives (FRs) to provide day-to-day oversight of contractor operations.

  14. Towards Revised Step IV MICE Optics in the Absence of M1 SSD

    SciTech Connect (OSTI)

    Bayes, R.; Berg, J. S.; Blackmore, V.; Hunt, C.; Liu, A.; Pasternak, J.; Rogers, C. T.

    2015-10-01

    During magnet commissioning in September 2015, the leads on coil M1 of the downstream spectrometer solenoid failed. The coil will not be operational for MICE Step IV. Revised optics settings for the Step IV data taking are reviewed.

  15. GaN Initiative for Grid Applications (GIGA)

    SciTech Connect (OSTI)

    Turner, George

    2015-07-03

    For nearly 4 ½ years, MIT Lincoln Laboratory (MIT/LL) led a very successful, DoE-funded team effort to develop GaN-on-Si materials and devices, targeting high-voltage (>1 kV), high-power, cost-effective electronics for grid applications. This effort, called the GaN Initiative for Grid Applications (GIGA) program, was initially made up of MIT/LL, the MIT campus group of Prof. Tomas Palacios (MIT), and the industrial partner M/A Com Technology Solutions (MTS). Later in the program a 4th team member was added (IQE MA) to provide commercial-scale GaN-on-Si epitaxial materials. A basic premise of the GIGA program was that power electronics, for ubiquitous utilization -even for grid applications - should be closer in cost structure to more conventional Si-based power electronics. For a number of reasons, more established GaN-on-SiC or even SiC-based power electronics are not likely to reach theses cost structures, even in higher manufacturing volumes. An additional premise of the GIGA program was that the technical focus would be on materials and devices suitable for operating at voltages > 1 kV, even though there is also significant commercial interest in developing lower voltage (< 1 kV), cost effective GaN-on-Si devices for higher volume applications, like consumer products. Remarkable technical progress was made during the course of this program. Advances in materials included the growth of high-quality, crack-free epitaxial GaN layers on large-diameter Si substrates with thicknesses up to ~5 μm, overcoming significant challenges in lattice mismatch and thermal expansion differences between Si and GaN in the actual epitaxial growth process. Such thick epilayers are crucial for high voltage operation of lateral geometry devices such as Schottky barrier (SB) diodes and high electron mobility transistors (HEMTs). New “Normally-Off” device architectures were demonstrated – for safe operation of power electronics circuits. The trade-offs between lateral and

  16. Nanostructural engineering of nitride nucleation layers for GaN substrate dislocation reduction.

    SciTech Connect (OSTI)

    Koleske, Daniel David; Lee, Stephen Roger; Lemp, Thomas Kerr; Coltrin, Michael Elliott; Cross, Karen Charlene; Thaler, Gerald

    2009-07-01

    With no lattice matched substrate available, sapphire continues as the substrate of choice for GaN growth, because of its reasonable cost and the extensive prior experience using it as a substrate for GaN. Surprisingly, the high dislocation density does not appear to limit UV and blue LED light intensity. However, dislocations may limit green LED light intensity and LED lifetime, especially as LEDs are pushed to higher current density for high end solid state lighting sources. To improve the performance for these higher current density LEDs, simple growth-enabled reductions in dislocation density would be highly prized. GaN nucleation layers (NLs) are not commonly thought of as an application of nano-structural engineering; yet, these layers evolve during the growth process to produce self-assembled, nanometer-scale structures. Continued growth on these nuclei ultimately leads to a fully coalesced film, and we show in this research program that their initial density is correlated to the GaN dislocation density. In this 18 month program, we developed MOCVD growth methods to reduce GaN dislocation densities on sapphire from 5 x 10{sup 8} cm{sup -2} using our standard delay recovery growth technique to 1 x 10{sup 8} cm{sup -2} using an ultra-low nucleation density technique. For this research, we firmly established a correlation between the GaN nucleation thickness, the resulting nucleation density after annealing, and dislocation density of full GaN films grown on these nucleation layers. We developed methods to reduce the nuclei density while still maintaining the ability to fully coalesce the GaN films. Ways were sought to improve the GaN nuclei orientation by improving the sapphire surface smoothness by annealing prior to the NL growth. Methods to eliminate the formation of additional nuclei once the majority of GaN nuclei were developed using a silicon nitride treatment prior to the deposition of the nucleation layer. Nucleation layer thickness was determined

  17. ORISE: Facilities

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    ORISE Facilities Unique laboratories and training centers among the assets managed on behalf of the U.S. Department of Energy The Oak Ridge Institute for Science and Education (ORISE) is home to a number of on- and off-site facilities that support the U.S. Department of Energy's (DOE) science education and research mission. From on-site medical laboratories to radiation emergency medicine training facilities, ORISE facilities are helping to address national needs in the following areas:

  18. Facility Safety

    Directives, Delegations, and Requirements [Office of Management (MA)]

    1996-10-24

    Establishes facility safety requirements related to: nuclear safety design, criticality safety, fire protection and natural phenomena hazards mitigation.

  19. Facility Safety

    Directives, Delegations, and Requirements [Office of Management (MA)]

    1995-11-16

    Establishes facility safety requirements related to: nuclear safety design, criticality safety, fire protection and natural phenomena hazards mitigation.

  20. E1 and M1 γ-strength functions in 144Nd

    DOE PAGES-Beta [OSTI]

    Voinov, A. V.; Grimes, S. M.

    2015-12-14

    Both E1 and M1 γ-strength functions below the neutron separation energy were analyzed based on experimental data from 143Nd(n,γ)144Nd and 143Nd(n,γα)140Ce reactions. It is confirmed that the commonly adopted E1 model based on the temperature dependence of the width of the giant dipole resonance works well. The popular M1 strength function due to the spin-flip magnetic resonance located near the neutron binding energy is not capable of reproducing experimental data. As a result, the low-energy enhancement of the M1 strength or the energy-independent model of Weisskopf, both leading to the low-energy strength sizable to E1 one, fit experimental data best.

  1. Synthesis, morphology and optical properties of GaN and AlGaN semiconductor nanostructures

    SciTech Connect (OSTI)

    Kuppulingam, B. Singh, Shubra Baskar, K.

    2014-04-24

    Hexagonal Gallium Nitride (GaN) and Aluminum Gallium Nitride (AlGaN) nanoparticles were synthesized by sol-gel method using Ethylene Diamine Tetra Acetic acid (EDTA) complex route. Powder X-ray diffraction (PXRD) analysis confirms the hexagonal wurtzite structure of GaN and Al{sub 0.25}Ga{sub 0.75}N nanoparticles. Surface morphology and elemental analysis were carried out by Scanning Electron Microscope (SEM) and Energy Dispersive X-ray spectroscopy (EDX). The room temperature Photoluminescence (PL) study shows the near band edge emission for GaN at 3.35 eV and at 3.59 eV for AlGaN nanoparticles. The Aluminum (Al) composition of 20% has been obtained from PL emission around 345 nm.

  2. Wheelabrator Millbury Facility Biomass Facility | Open Energy...

    Open Energy Information (Open El) [EERE & EIA]

    Facility Facility Wheelabrator Millbury Facility Sector Biomass Facility Type Municipal Solid Waste Location Worcester County, Massachusetts Coordinates 42.4096528, -71.8571331...

  3. Facility Representatives

    Energy Savers

    Program Manager Office of the Departmental Representative to the Defense Nuclear Facilities Safety Board (DOE DR-1) DOE Headquarters, Forrestal Building 1000 Independence ...

  4. Beamlines & Facilities

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    Imaging Group: Beamlines The X-ray Micrscopy and Imaging Group operates several beamlines and facilities. The bending magnet beamline (2-BM) entertaines 2 general user programs in...

  5. Electrical and optical properties of carbon-doped GaN grown by MBE on MOCVD GaN templates using a CCl4 dopant source

    SciTech Connect (OSTI)

    Armitage, Rob; Yang, Qing; Feick, Henning; Park, Yeonjoon; Weber, Eicke R.

    2002-04-15

    Carbon-doped GaN was grown by plasma-assisted molecular-beam epitaxy using carbon tetrachloride vapor as the dopant source. For moderate doping mainly acceptors were formed, yielding semi-insulating GaN. However at higher concentrations p-type conductivity was not observed, and heavily doped films (>5 x 10{sup 20} cm{sup -3}) were actually n-type rather than semi-insulating. Photoluminescence measurements showed two broad luminescence bands centered at 2.2 and 2.9 eV. The intensity of both bands increased with carbon content, but the 2.2 eV band dominated in n-type samples. Intense, narrow ({approx}6 meV) donor-bound exciton peaks were observed in the semi-insulating samples.

  6. Facility Safety

    Directives, Delegations, and Requirements [Office of Management (MA)]

    2005-12-22

    This Order establishes facility and programmatic safety requirements for Department of Energy facilities, which includes nuclear and explosives safety design criteria, fire protection, criticality safety, natural phenomena hazards mitigation, and the System Engineer Program. Cancels DOE O 420.1A. DOE O 420.1B Chg 1 issued 4-19-10.

  7. Facility Representatives

    Directives, Delegations, and Requirements [Office of Management (MA)]

    2006-04-06

    REPLACED BY DOE-STD-1063 | SUPERSEDING DOE-STD-1063-2000 (MARCH 2000) The purpose of the DOE Facility Representative Program is to ensure that competent DOE staff personnel are assigned to oversee the day-to-day contractor operations at DOE’s hazardous nuclear and non-nuclear facilities.

  8. New probe of M1 and E1 strengths in GDR regions

    SciTech Connect (OSTI)

    Hayakawa, T. [Japan Atomic Energy Agency and National Astronomical Observatory in Japan (Japan); Ogata, K. [RCNP, Osaka University (Japan); Miyamoto, S.; Mochizuki, T.; Horikawa, K.; Amano, S. [University of Hyogo (Japan); Imazaki, K.; Li, D.; Izawa, Y. [Institute for Laser Technology (Japan); Chiba, S. [Tokyo Institute of Technology (Japan)

    2014-05-02

    The M1 strengths (or level density of 1{sup +} states) are of importance for estimation of interaction strengths between neutrinos and nuclei for the study of the supernova neutrino-process. In 1957, Agodi predicted theoretically angular distribution of neutrons emitted from states excited via dipole transitions with linearly polarized gamma-ray beam at the polar angle of ?=90 should be followed by a simple function, a + b cos(2?), where ?, is azimuthal angel. However, this theoretical prediction has not been verified over the wide mass region except for light nuclei as deuteron. We have measured neutron angular distributions with (polarized gamma, n) reactions on Au, Nal, and Cu. We have verified the Agodi's prediction for the first time over the wide mass region. This suggests that (polarized gamma, n) reactions may be useful tools to study M1 strengths in giant resonance regions.

  9. u.s. DEPARIMENT OF ENERGY EERE PROJECT M~'1AGEMENT CENTER

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    DEPARIMENT OF ENERGY EERE PROJECT M~'1AGEMENT CENTER NEPA Dl!IERMINATION RECIPIENT :long Island Power Authority PROJECT TITLE: Long Island 50 MW Solar Initiative Page 1 of2 STATE: NY Funding Opportunity Announcement Number Procurement lostrument Number NEPA Control Number CID Number OE* EEOOO3169 GF0-0003169-001 GOO Based on my review ofthe information conceming the proposed actlon,.5 NEPA Compliance Officer (authorized under DOE Order 451.1A), I have made the following determination: ex, EA,

  10. Tunnel-injection GaN quantum dot ultraviolet light-emitting diodes

    SciTech Connect (OSTI)

    Verma, Jai; Kandaswamy, Prem Kumar; Protasenko, Vladimir; Verma, Amit; Grace Xing, Huili; Jena, Debdeep

    2013-01-28

    We demonstrate a GaN quantum dot ultraviolet light-emitting diode that uses tunnel injection of carriers through AlN barriers into the active region. The quantum dot heterostructure is grown by molecular beam epitaxy on AlN templates. The large lattice mismatch between GaN and AlN favors the formation of GaN quantum dots in the Stranski-Krastanov growth mode. Carrier injection by tunneling can mitigate losses incurred in hot-carrier injection in light emitting heterostructures. To achieve tunnel injection, relatively low composition AlGaN is used for n- and p-type layers to simultaneously take advantage of effective band alignment and efficient doping. The small height of the quantum dots results in short-wavelength emission and are simultaneously an effective tool to fight the reduction of oscillator strength from quantum-confined Stark effect due to polarization fields. The strong quantum confinement results in room-temperature electroluminescence peaks at 261 and 340 nm, well above the 365 nm bandgap of bulk GaN. The demonstration opens the doorway to exploit many varied features of quantum dot physics to realize high-efficiency short-wavelength light sources.

  11. Surface Termination of M1 Phase and Rational Design of Propane Ammoxidation Catalysts

    SciTech Connect (OSTI)

    Guliants, Vadim

    2015-02-16

    This final report describes major accomplishments in this research project which has demonstrated that the M1 phase is the only crystalline phase required for propane ammoxidation to acrylonitrile and that a surface monolayer terminating the ab planes of the M1 phase is responsible for their activity and selectivity in this reaction. Fundamental studies of the topmost surface chemistry and mechanism of propane ammoxidation over the Mo-V-(Te,Sb)-(Nb,Ta)-O M1 and M2 phases resulted in the development of quantitative understanding of the surface molecular structure – reactivity relationships for this unique catalytic system. These oxides possess unique catalytic properties among mixed metal oxides, because they selectively catalyze three alkane transformation reactions, namely propane ammoxidation to acrylonitrile, propane oxidation to acrylic acid and ethane oxidative dehydrogenation, all of considerable economic significance. Therefore, the larger goal of this research was to expand this catalysis to other alkanes of commercial interest, and more broadly, demonstrate successful approaches to rational design of improved catalysts that can be applied to other selective (amm)oxidation processes.

  12. Ultra High p-doping Material Research for GaN Based Light Emitters

    SciTech Connect (OSTI)

    Vladimir Dmitriev

    2007-06-30

    The main goal of the Project is to investigate doping mechanisms in p-type GaN and AlGaN and controllably fabricate ultra high doped p-GaN materials and epitaxial structures. Highly doped p-type GaN-based materials with low electrical resistivity and abrupt doping profiles are of great importance for efficient light emitters for solid state lighting (SSL) applications. Cost-effective hydride vapor phase epitaxial (HVPE) technology was proposed to investigate and develop p-GaN materials for SSL. High p-type doping is required to improve (i) carrier injection efficiency in light emitting p-n junctions that will result in increasing of light emitting efficiency, (ii) current spreading in light emitting structures that will improve external quantum efficiency, and (iii) parameters of Ohmic contacts to reduce operating voltage and tolerate higher forward currents needed for the high output power operation of light emitters. Highly doped p-type GaN layers and AlGaN/GaN heterostructures with low electrical resistivity will lead to novel device and contact metallization designs for high-power high efficiency GaN-based light emitters. Overall, highly doped p-GaN is a key element to develop light emitting devices for the DOE SSL program. The project was focused on material research for highly doped p-type GaN materials and device structures for applications in high performance light emitters for general illumination P-GaN and p-AlGaN layers and multi-layer structures were grown by HVPE and investigated in terms of surface morphology and structure, doping concentrations and profiles, optical, electrical, and structural properties. Tasks of the project were successfully accomplished. Highly doped GaN materials with p-type conductivity were fabricated. As-grown GaN layers had concentration N{sub a}-N{sub d} as high as 3 x 10{sup 19} cm{sup -3}. Mechanisms of doping were investigated and results of material studies were reported at several International conferences providing

  13. Facility Safety

    Directives, Delegations, and Requirements [Office of Management (MA)]

    2012-12-04

    The Order establishes facility and programmatic safety requirements for DOE and NNSA for nuclear safety design criteria, fire protection, criticality safety, natural phenomena hazards (NPH) mitigation, and System Engineer Program. This Page Change is limited in scope to changes necessary to invoke DOE-STD-1104, Review and Approval of Nuclear Facility Safety Basis and Safety Design Basis Document, and revised DOE-STD-3009-2014, Preparation of Nonreactor Nuclear Facility Documented Safety Analysis as required methods. DOE O 420.1C Chg 1, dated 2-27-15, supersedes DOE O 420.1C.

  14. Gas Utilization Facility Biomass Facility | Open Energy Information

    Open Energy Information (Open El) [EERE & EIA]

    Gas Utilization Facility Biomass Facility Jump to: navigation, search Name Gas Utilization Facility Biomass Facility Facility Gas Utilization Facility Sector Biomass Facility Type...

  15. Total Energy Facilities Biomass Facility | Open Energy Information

    Open Energy Information (Open El) [EERE & EIA]

    Energy Facilities Biomass Facility Jump to: navigation, search Name Total Energy Facilities Biomass Facility Facility Total Energy Facilities Sector Biomass Facility Type...

  16. Facility Safety

    Directives, Delegations, and Requirements [Office of Management (MA)]

    2002-05-20

    To establish facility safety requirements for the Department of Energy, including National Nuclear Security Administration. Cancels DOE O 420.1. Canceled by DOE O 420.1B.

  17. Facility Safety

    Directives, Delegations, and Requirements [Office of Management (MA)]

    2005-12-22

    The order establishes facility and programmatic safety requirements for nuclear and explosives safety design criteria, fire protection, criticality safety, natural phenomena hazards (NPH) mitigation, and the System Engineer Program.Chg 1 incorporates the use of DOE-STD-1189-2008, Integration of Safety into the Design Process, mandatory for Hazard Category 1, 2 and 3 nuclear facilities. Cancels DOE O 420.1A.

  18. Facility Safety

    Directives, Delegations, and Requirements [Office of Management (MA)]

    2013-06-21

    DOE-STD-1104 contains the Department's method and criteria for reviewing and approving nuclear facility's documented safety analysis (DSA). This review and approval formally document the basis for DOE, concluding that a facility can be operated safely in a manner that adequately protects workers, the public, and the environment. Therefore, it is appropriate to formally require implementation of the review methodology and criteria contained in DOE-STD-1104.

  19. Facility Safety

    Directives, Delegations, and Requirements [Office of Management (MA)]

    2000-11-20

    The objective of this Order is to establish facility safety requirements related to: nuclear safety design, criticality safety, fire protection and natural phenomena hazards mitigation. The Order has Change 1 dated 11-16-95, Change 2 dated 10-24-96, and the latest Change 3 dated 11-22-00 incorporated. The latest change satisfies a commitment made to the Defense Nuclear Facilities Safety Board (DNFSB) in response to DNFSB recommendation 97-2, Criticality Safety.

  20. Microstructures of GaN and In{sub x}Ga{sub 1-x}N films grown by MOCVD on free-standing GaN templates

    SciTech Connect (OSTI)

    Jasinski, J.; Liliental-Weber, Z.; Huang, D.; Reshchikov, M.A.; Yun, F.; Morkoc, H.; Sone, C.; Park, S.S.; Lee, K.Y.

    2002-04-30

    We summarize structural properties of thick HVPE GaN templates from the point of view of their application as substrates for growth of nitride layers. This is followed by the results of optical and structural studies, mostly transmission electron microscopy, of nitride layers grown by MOCVD on top of the HVPE substrates. The results indicate high structural quality of these layers with a low density of threading dislocations (in the range of 10{sup 6} cm{sup -2}). Convergent beam electron diffraction studies showed that the MOCVD GaN films have Ga-polarity, the same polarity as the HVPE GaN substrates. Structural studies of an InGaN layer grown on top of the MOCVD GaN film showed the presence of two layers, which differed in lattice parameter and composition. The upper layer, on the top of the structure had a c-lattice parameter about 2% larger than that of GaN and contained 10.3 {+-} 0.8% of In. Values measured for the thinner, intermediate layer adjacent to the GaN layer were about 2 .5 times lower.

  1. Working with SRNL - Our Facilities - Glovebox Facilities

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    SRNL Our Facilities - Glovebox Facilities Govebox Facilities are sealed, protectively-lined compartments with attached gloves, allowing workers to safely handle dangerous materials...

  2. Influence of growth temperature and temperature ramps on deep level defect incorporation in m-plane GaN

    SciTech Connect (OSTI)

    Armstrong, A. M.; Kelchner, K.; Nakamura, S.; DenBaars, S. P.; Materials Department, University of California, Santa Barbara, California 93106 ; Speck, J. S.

    2013-12-02

    The dependence of deep level defect incorporation in m-plane GaN films grown by metal-organic chemical vapor deposition on bulk m-plane GaN substrates as a function of growth temperature (T{sub g}) and T{sub g} ramping method was investigated using deep level optical spectroscopy. Understanding the influence of T{sub g} on GaN deep level incorporation is important for InGaN/GaN multi-quantum well (MQW) light emitting diodes (LEDs) and laser diodes (LDs) because GaN quantum barrier (QB) layers are grown much colder than thin film GaN to accommodate InGaN QW growth. Deep level spectra of low T{sub g} (800?C) GaN films grown under QB conditions were compared to deep level spectra of high T{sub g} (1150?C) GaN. Reducing T{sub g}, increased the defect density significantly (>50) through introduction of emergent deep level defects at 2.09?eV and 2.9?eV below the conduction band minimum. However, optimizing growth conditions during the temperature ramp when transitioning from high to low T{sub g} substantially reduced the density of these emergent deep levels by approximately 40%. The results suggest that it is important to consider the potential for non-radiative recombination in QBs of LED or LD active regions, and tailoring the transition from high T{sub g} GaN growth to active layer growth can mitigate such non-radiative channels.

  3. SLAC Accelerator Test Facilities

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    FACET & TF Careers & Education Archived FACET User Facility Quick Launch About FACET & Test Facilities Expand About FACET & Test Facilities FACET & Test Facilities User Portal...

  4. Localized tip enhanced Raman spectroscopic study of impurity incorporated single GaN nanowire in the sub-diffraction limit

    SciTech Connect (OSTI)

    Patsha, Avinash E-mail: dhara@igcar.gov.in; Dhara, Sandip; Tyagi, A. K.

    2015-09-21

    The localized effect of impurities in single GaN nanowires in the sub-diffraction limit is reported using the study of lattice vibrational modes in the evanescent field of Au nanoparticle assisted tip enhanced Raman spectroscopy (TERS). GaN nanowires with the O impurity and the Mg dopants were grown by the chemical vapor deposition technique in the catalyst assisted vapor-liquid-solid process. Symmetry allowed Raman modes of wurtzite GaN are observed for undoped and doped nanowires. Unusually very strong intensity of the non-zone center zone boundary mode is observed for the TERS studies of both the undoped and the Mg doped GaN single nanowires. Surface optical mode of A{sub 1} symmetry is also observed for both the undoped and the Mg doped GaN samples. A strong coupling of longitudinal optical (LO) phonons with free electrons, however, is reported only in the O rich single nanowires with the asymmetric A{sub 1}(LO) mode. Study of the local vibration mode shows the presence of Mg as dopant in the single GaN nanowires.

  5. Performance and breakdown characteristics of irradiated vertical power GaN P-i-N diodes

    DOE PAGES-Beta [OSTI]

    King, M. P.; Armstrong, A. M.; Dickerson, J. R.; Vizkelethy, G.; Fleming, R. M.; Campbell, J.; Wampler, W. R.; Kizilyalli, I. C.; Bour, D. P.; Aktas, O.; et al

    2015-10-29

    Electrical performance and defect characterization of vertical GaN P-i-N diodes before and after irradiation with 2.5 MeV protons and neutrons is investigated. Devices exhibit increase in specific on-resistance following irradiation with protons and neutrons, indicating displacement damage introduces defects into the p-GaN and n- drift regions of the device that impact on-state device performance. The breakdown voltage of these devices, initially above 1700 V, is observed to decrease only slightly for particle fluence <; 1013 cm-2. Furthermore, the unipolar figure of merit for power devices indicates that while the on-resistance and breakdown voltage degrade with irradiation, vertical GaN P-i-Ns remainmore » superior to the performance of the best available, unirradiated silicon devices and on-par with unirradiated modern SiC-based power devices.« less

  6. Anisotropy of two-photon absorption and free-carrier effect in nonpolar GaN

    SciTech Connect (OSTI)

    Fang, Yu; Zhou, Feng; Yang, Junyi; Wu, Xingzhi; Xiao, Zhengguo; Li, Zhongguo; Song, Yinglin

    2015-03-30

    We reported a systematic study about the anisotropic optical nonlinearities in bulk m-plane and a-plane GaN crystals by Z-scan and pump-probe with phase object methods under picosecond at 532 nm. The two-photon absorption coefficient, which was measured as a function of polarization angle, exhibited oscillation curves with a period of π/2, indicating a highly polarized optical third-order nonlinearity in both nonpolar GaN samples. Furthermore, free-carrier absorption revealed stronger hole-related absorption for E⊥c than for E//c probe polarization. In contrast, free-carrier refraction was found almost isotropic due to electron-related refraction in the isotropic conduction bands.

  7. High voltage and high current density vertical GaN power diodes

    SciTech Connect (OSTI)

    Fischer, A. J.; Dickerson, J. R.; Armstrong, A. M.; Moseley, M. W.; Crawford, M. H.; King, M. P.; Allerman, A. A.; Kaplar, R. J.; van Heukelom, M. S.; Wierer, J. J.

    2016-01-01

    We report on the realization of a GaN high voltage vertical p-n diode operating at > 3.9 kV breakdown with a specific on-resistance < 0.9 mΩ.cm2. Diodes achieved a forward current of 1 A for on-wafer, DC measurements, corresponding to a current density > 1.4 kA/cm2. An effective critical electric field of 3.9 MV/cm was estimated for the devices from analysis of the forward and reverse current-voltage characteristics. Furthermore this suggests that the fundamental limit to the GaN critical electric field is significantly greater than previously believed.

  8. High voltage and high current density vertical GaN power diodes

    DOE PAGES-Beta [OSTI]

    Fischer, A. J.; Dickerson, J. R.; Armstrong, A. M.; Moseley, M. W.; Crawford, M. H.; King, M. P.; Allerman, A. A.; Kaplar, R. J.; van Heukelom, M. S.; Wierer, J. J.

    2016-01-01

    We report on the realization of a GaN high voltage vertical p-n diode operating at > 3.9 kV breakdown with a specific on-resistance < 0.9 mΩ.cm2. Diodes achieved a forward current of 1 A for on-wafer, DC measurements, corresponding to a current density > 1.4 kA/cm2. An effective critical electric field of 3.9 MV/cm was estimated for the devices from analysis of the forward and reverse current-voltage characteristics. Furthermore this suggests that the fundamental limit to the GaN critical electric field is significantly greater than previously believed.

  9. Surfactant assisted growth of MgO films on GaN

    SciTech Connect (OSTI)

    Paisley, E. A.; Shelton, T. C.; Collazo, R.; Sitar, Z.; Maria, J.-P.; Christen, H. M.; Biegalski, M. D.; Mita, S.

    2012-08-27

    Thin epitaxial films of <111> oriented MgO on [0001]-oriented GaN were grown by molecular beam epitaxy and pulsed laser deposition using the assistance of a vapor phase surfactant. In both cases, surfactant incorporation enabled layer-by-layer growth and a smooth terminal surface by stabilizing the {l_brace}111{r_brace} rocksalt facet. Metal-insulator-semiconductor capacitor structures were fabricated on n-type GaN. A comparison of leakage current density for conventional and surfactant-assisted growth reveals a nearly 100 Multiplication-Sign reduction in leakage current density for the surfactant-assisted samples. These data verify numerous predictions regarding the role of H-termination in regulating the habit of rocksalt crystals.

  10. Catalyst and its diameter dependent growth kinetics of CVD grown GaN nanowires

    SciTech Connect (OSTI)

    Samanta, Chandan [Department of Physics, Indian Institute of Technology Kanpur (India)] [Department of Physics, Indian Institute of Technology Kanpur (India); Chander, D. Sathish [Department of Physics, Indian Institute of Technology Kanpur (India) [Department of Physics, Indian Institute of Technology Kanpur (India); Department of Mechanical Engineering, Indian Institute of Technology Kanpur (India); Ramkumar, J. [Department of Mechanical Engineering, Indian Institute of Technology Kanpur (India)] [Department of Mechanical Engineering, Indian Institute of Technology Kanpur (India); Dhamodaran, S., E-mail: kdams2003@gmail.com [Department of Physics, Indian Institute of Technology Kanpur (India)

    2012-04-15

    Graphical abstract: GaN nanowires with controlled diameter and aspect ratio has been grown using a simple CVD technique. The growth kinetics of CVD grown nanowires investigated in detail for different catalysts and their diameters. A critical diameter important to distinguish the growth regimes has been discussed in detail. The results are important which demonstrates the growth of diameter and aspect ratio controlled GaN nanowires and also understand their growth kinetics. Highlights: Black-Right-Pointing-Pointer Controlled diameter and aspect ratio of GaN nanowires achieved in simple CVD reactor. Black-Right-Pointing-Pointer Nanowire growth kinetics for different catalyst and its diameters were understood. Black-Right-Pointing-Pointer Adatoms vapor pressure inside reactor plays a crucial role in growth kinetics. Black-Right-Pointing-Pointer Diffusion along nanowire sidewalls dominate for gold and nickel catalysts. Black-Right-Pointing-Pointer Gibbs-Thomson effect dominates for palladium catalyst. -- Abstract: GaN nanowires were grown using chemical vapor deposition with controlled aspect ratio. The catalyst and catalyst-diameter dependent growth kinetics is investigated in detail. We first discuss gold catalyst diameter dependent growth kinetics and subsequently compare with nickel and palladium catalyst. For different diameters of gold catalyst there was hardly any variation in the length of the nanowires but for other catalysts with different diameter a strong length variation of the nanowires was observed. We calculated the critical diameter dependence on adatoms pressure inside the reactor and inside the catalytic particle. This gives an increasing trend in critical diameter as per the order gold, nickel and palladium for the current set of experimental conditions. Based on the critical diameter, with gold and nickel catalyst the nanowire growth was understood to be governed by limited surface diffusion of adatoms and by Gibbs-Thomson effect for the palladium

  11. Structure and electronic properties of mixed (a + c) dislocation cores in GaN

    SciTech Connect (OSTI)

    Horton, M. K.; Rhode, S. L.; Moram, M. A.

    2014-08-14

    Classical atomistic models and atomic-resolution scanning transmission electron microscopy studies of GaN films reveal that mixed (a + c)-type dislocations have multiple different core structures, including a dissociated structure consisting of a planar fault on one of the (12{sup ¯}10) planes terminated by two different partial dislocations. Density functional theory calculations show that all cores introduce localized states into the band gap, which affects device performance.

  12. Hafnium nitride buffer layers for growth of GaN on silicon

    DOE Patents [OSTI]

    Armitage, Robert D.; Weber, Eicke R.

    2005-08-16

    Gallium nitride is grown by plasma-assisted molecular-beam epitaxy on (111) and (001) silicon substrates using hafnium nitride buffer layers. Wurtzite GaN epitaxial layers are obtained on both the (111) and (001) HfN/Si surfaces, with crack-free thickness up to 1.2 {character pullout}m. However, growth on the (001) surface results in nearly stress-free films, suggesting that much thicker crack-free layers could be obtained.

  13. Space-and-time-resolved spectroscopy of single GaN nanowires

    SciTech Connect (OSTI)

    Upadhya, Prashanth C.; Martinez, Julio A.; Li, Qiming; Wang, George T.; Swartzentruber, Brian S.; Taylor, Antoinette J.; Prasankumar, Rohit P.

    2015-06-29

    Gallium nitride nanowires have garnered much attention in recent years due to their attractive optical and electrical properties. An understanding of carrier transport, relaxation, and recombination in these quasi-one-dimensional nanosystems is therefore important in optimizing them for various applications. Here, we present ultrafast optical microscopic measurements on single GaN nanowires. Our experiments, performed while varying the light polarization, excitation fluence, and position, give insight into the mechanisms governing carrier dynamics in these nanosystems.

  14. Facility Safety

    Directives, Delegations, and Requirements [Office of Management (MA)]

    1995-10-13

    Establishes facility safety requirements related to: nuclear safety design, criticality safety, fire protection and natural phenomena hazards mitigation. Cancels DOE 5480.7A, DOE 5480.24, DOE 5480.28 and Division 13 of DOE 6430.1A. Canceled by DOE O 420.1A.

  15. Facility Safety

    Directives, Delegations, and Requirements [Office of Management (MA)]

    2012-12-04

    The Order establishes facility and programmatic safety requirements for DOE and NNSA for nuclear safety design criteria, fire protection, criticality safety, natural phenomena hazards (NPH) mitigation, and System Engineer Program. Cancels DOE O 420.1B, DOE G 420.1-2 and DOE G 420.1-3.

  16. Metro Methane Recovery Facility Biomass Facility | Open Energy...

    Open Energy Information (Open El) [EERE & EIA]

    Methane Recovery Facility Biomass Facility Jump to: navigation, search Name Metro Methane Recovery Facility Biomass Facility Facility Metro Methane Recovery Facility Sector Biomass...

  17. Vertical GaN power diodes with a bilayer edge termination

    SciTech Connect (OSTI)

    Dickerson, Jeramy R.; Allerman, Andrew A.; Bryant, Benjamin N.; Fischer, Arthur J.; King, Michael P.; Moseley, Michael W.; Armstrong, Andrew M.; Kaplar, Robert J.; Kizilyalli, Isik C.; Aktas, Ozgur; Wierer, Jr., Jonathan J.

    2015-12-07

    Vertical GaN power diodes with a bilayer edge termination (ET) are demonstrated. The GaN p-n junction is formed on a low threading dislocation defect density (104 - 105 cm-2) GaN substrate, and has a 15-μm-thick n-type drift layer with a free carrier concentration of 5 × 1015 cm-3. The ET structure is formed by N implantation into the p+-GaN epilayer just outside the p-type contact to create compensating defects. The implant defect profile may be approximated by a bilayer structure consisting of a fully compensated layer near the surface, followed by a 90% compensated (p) layer near the n-type drift region. These devices exhibit avalanche breakdown as high as 2.6 kV at room temperature. In addition simulations show that the ET created by implantation is an effective way to laterally distribute the electric field over a large area. This increases the voltage at which impact ionization occurs and leads to the observed higher breakdown voltages.

  18. Vertical GaN power diodes with a bilayer edge termination

    DOE PAGES-Beta [OSTI]

    Dickerson, Jeramy R.; Allerman, Andrew A.; Bryant, Benjamin N.; Fischer, Arthur J.; King, Michael P.; Moseley, Michael W.; Armstrong, Andrew M.; Kaplar, Robert J.; Kizilyalli, Isik C.; Aktas, Ozgur; et al

    2015-12-07

    Vertical GaN power diodes with a bilayer edge termination (ET) are demonstrated. The GaN p-n junction is formed on a low threading dislocation defect density (104 - 105 cm-2) GaN substrate, and has a 15-μm-thick n-type drift layer with a free carrier concentration of 5 × 1015 cm-3. The ET structure is formed by N implantation into the p+-GaN epilayer just outside the p-type contact to create compensating defects. The implant defect profile may be approximated by a bilayer structure consisting of a fully compensated layer near the surface, followed by a 90% compensated (p) layer near the n-type driftmore » region. These devices exhibit avalanche breakdown as high as 2.6 kV at room temperature. In addition simulations show that the ET created by implantation is an effective way to laterally distribute the electric field over a large area. This increases the voltage at which impact ionization occurs and leads to the observed higher breakdown voltages.« less

  19. Formation of manganese {delta}-doped atomic layer in wurtzite GaN

    SciTech Connect (OSTI)

    Shi Meng; Chinchore, Abhijit; Wang Kangkang; Mandru, Andrada-Oana; Liu Yinghao; Smith, Arthur R.

    2012-09-01

    We describe the formation of a {delta}-doped manganese layer embedded within c-plane wurtzite gallium nitride using a special molecular beam epitaxy growth process. Manganese is first deposited on the gallium-poor GaN (0001) surface, forming a {radical}(3) Multiplication-Sign {radical}(3)-R30 Degree-Sign reconstructed phase. This well-defined surface reconstruction is then nitrided using plasma nitridation, and gallium nitride is overgrown. The manganese content of the {radical}(3) Multiplication-Sign {radical}(3)-R30 Degree-Sign phase, namely one Mn per each {radical}(3) Multiplication-Sign {radical}(3)-R30 Degree-Sign unit cell, implies that the MnGaN alloy layer has a Mn concentration of up to 33%. The structure and chemical content of the surface are monitored beginning from the initial growth stage up through the overgrowth of 20 additional monolayers (MLs) of GaN. An exponential-like drop-off of the Mn signal with increasing GaN monolayers, as measured by Auger electron spectroscopy, indicates that the highly concentrated Mn layer remains at the {delta}-doped interface. A model of the resultant {delta}-doped structure is formulated based on the experimental data, and implications for possible spintronic applications are discussed.

  20. Theoretical and experimental study of dynamics of photoexcited carriers in GaN

    SciTech Connect (OSTI)

    Shishehchi, Sara; Bellotti, Enrico; Rudin, Sergey; Garrett, Gregory A.; Wraback, Michael

    2013-12-21

    We present a theoretical and experimental study of the sub-picosecond dynamics of photo-excited carriers in GaN. In the theoretical model, interaction with an external ultrafast laser pulse is treated coherently and to account for the scattering mechanisms and dephasing processes, a generalized Monte-Carlo simulation is used. The scattering mechanisms included are carrier interactions with polar optical phonons and acoustic phonons, and carrier-carrier Coulomb interactions. We study the effect of different scattering mechanisms on the carrier densities. In the case that the excitation energy satisfies the threshold for polar optical scattering, phonon contribution is the dominant process in relaxing the system, otherwise, carrier-carrier mechanism is dominant. Furthermore, we present the temperature and pulse power dependent normalized luminescence intensity. The results are presented over a range of temperatures, electric field, and excitation energy of the laser pulse. For comparison, we also report the experimental time-resolved photoluminescence studies on GaN samples. There is a good agreement between the simulation and experiment in normalized luminescence intensity results. Therefore, we show that we can explain the dynamics of the photo-excited carriers in GaN by including only carrier-carrier and carrier-phonon interactions and a relatively simple two-band electronic structure model.

  1. Analysis of the carbon-related 'blue' luminescence in GaN

    SciTech Connect (OSTI)

    Armitage, R.; Yang, Q.; Weber, E.R.

    2004-09-24

    The properties of a broad 2.86 eV photoluminescence band in carbon-doped GaN were studied as a function of C-doping level, temperature, and excitation density. The results are consistent with a C{sub Ga}-C{sub N} deep donor-deep acceptor recombination mechanism as proposed by Seager et al. For GaN:C grown by molecular-beam epitaxy (MBE) the 2.86 eV band is observed in Si co-doped layers exhibiting high n-type conductivity as well as in semi-insulating material. For low excitation density (4 W/cm{sup 2}) the 2.86 eV band intensity decreases as a function of cw-laser exposure time over a period of many minutes. The transient behavior is consistent with a model based on carrier diffusion and charge trapping-induced Coulomb barriers. The temperature dependence of the blue luminescence below 150 K was different for carbon-contaminated GaN grown by metalorganic vapor phase epitaxy (MOVPE) compared to C-doped MBE GaN.

  2. Low-energy electro- and photo-emission spectroscopy of GaN materials and devices

    SciTech Connect (OSTI)

    Piccardo, Marco; Weisbuch, Claude; Iveland, Justin; Nakamura, Shuji; Speck, James S.; Martinelli, Lucio Peretti, Jacques; Choi, Joo Won

    2015-03-21

    In hot-electron semiconductor devices, carrier transport extends over a wide range of conduction states, which often includes multiple satellite valleys. Electrical measurements can hardly give access to the transport processes over such a wide range without resorting to models and simulations. An alternative experimental approach however exists which is based on low-energy electron spectroscopy and provides, in a number of cases, very direct and selective information on hot-electron transport mechanisms. Recent results obtained in GaN crystals and devices by electron emission spectroscopy are discussed. Using near-band-gap photoemission, the energy position of the first satellite valley in wurtzite GaN is directly determined. By electro-emission spectroscopy, we show that the measurement of the electron spectrum emitted from a GaN p-n junction and InGaN/GaN light-emitting diodes (LEDs) under electrical injection of carriers provides a direct observation of transport processes in these devices. In particular, at high injected current density, high-energy features appear in the electro-emission spectrum of the LEDs showing that Auger electrons are being generated in the active region. These measurements allow us identifying the microscopic mechanism responsible for droop which represents a major hurdle for widespread adoption of solid-state lighting.

  3. Search for 14.4 keV solar axions from M1 transition of Fe-57...

    Office of Scientific and Technical Information (OSTI)

    Search for 14.4 keV solar axions from M1 transition of Fe-57 with CUORE crystals Citation Details In-Document Search Title: Search for 14.4 keV solar axions from M1 transition of...

  4. Discovery of low-lying E1 and M1 strengths in {sup 232}Th

    SciTech Connect (OSTI)

    Adekola, A. S.; Hammond, S. L.; Hill, A.; Karwowski, H. J.; Angell, C. T.; Howell, C. R.; Kwan, E.; Kelley, J. H.

    2011-03-15

    Properties of low-energy dipole states in {sup 232}Th have been investigated with the nuclear resonance fluorescence technique. The present work used monoenergetic {gamma}-ray beams at energies of 2-4 MeV from the high-intensity {gamma}-ray source at Triangle Universities Nuclear Laboratory. Over 40 transitions corresponding to deexcitation to the ground state and first excited state were observed for the first time. Excitation energies, integrated cross sections, decay widths, branching ratios, and transition strengths for those states in {sup 232}Th were determined and compared with quasiparticle random-phase-approximation calculations. A large number of E1 transitions were observed for the first time in actinide nuclei with summed strength of 3.28(69)x10{sup -3} e{sup 2} fm{sup 2}. The observed summed M1 strength of 4.26(63){mu}{sub N}{sup 2} is in good agreement with the other actinides and with the systematics of the scissors mode in deformed rare-earth nuclei.

  5. Spectroscopic and magnetic properties of Mn doped GaN epitaxial films grown by plasma assisted molecular beam epitaxy

    SciTech Connect (OSTI)

    Vidyasagar, R.; Lin, Y.-T.; Tu, L.-W.

    2012-12-15

    Graphical abstract: We report here that micro-Raman scattering spectrum for Mn doped GaN thin film has displayed a new peak manifested at 578 cm{sup −1}, by which it is attributed to interior LVM originated by the incorporation of Mn ions in place of Ga sites. Mn doped GaN thin film also showed the typical negative magnetoresistance up to ∼50 K, revealing that the film showed magnetic ordering of spins below 50 K. Display Omitted Highlights: ► GaN and Mn doped GaN single phase wurtzite structures grown by PAMBE. ► The phase purity of the epilayers investigated by HRXRD, HRSEM and EDX. ► The red shift in near band edge emission has been observed using micro-PL. ► A new peak related LVM at 578 cm{sup −1} in micro-Raman scattering measurements confirmed Mn doped into GaN. ► Negative-magnetoresistance investigations have showed that the film has T{sub c} < 50 K. -- Abstract: Spectroscopic and magnetic properties of Mn doped GaN, and GaN epitaxial films have been investigated by employing micro-photoluminescence, micro-Raman, and temperature dependent magneto-resistance measurements. The HR-XRD profiles have shown that the epitaxial films are in hexagonal wurtzite structures. Morphology and composition of the films have been examined by field emission scanning electron microscopy, and energy-dispersive X-ray analysis. Micro-photoluminescence spectrum displayed a dominant near band edge emission at 362 nm, which is assigned to near band edge transition within the hexagonal structure of GaN. Raman scattering profiles showed a new vibrational mode at 578 cm{sup −1}, which is attributed to the vacancy-related local vibrational mode of Mn occupying the Ga site. Temperature dependent negative magnetoresistance measurements provide a direct evidence of magnetic ordering below 50 K for the Mn doped GaN thin film.

  6. Origins of low energy-transfer efficiency between patterned GaN quantum well and CdSe quantum dots

    SciTech Connect (OSTI)

    Xu, Xingsheng

    2015-03-02

    For hybrid light emitting devices (LEDs) consisting of GaN quantum wells and colloidal quantum dots, it is necessary to explore the physical mechanisms causing decreases in the quantum efficiencies and the energy transfer efficiency between a GaN quantum well and CdSe quantum dots. This study investigated the electro-luminescence for a hybrid LED consisting of colloidal quantum dots and a GaN quantum well patterned with photonic crystals. It was found that both the quantum efficiency of colloidal quantum dots on a GaN quantum well and the energy transfer efficiency between the patterned GaN quantum well and the colloidal quantum dots decreased with increases in the driving voltage or the driving time. Under high driving voltages, the decreases in the quantum efficiency of the colloidal quantum dots and the energy transfer efficiency can be attributed to Auger recombination, while those decreases under long driving time are due to photo-bleaching and Auger recombination.

  7. Multicycle rapid thermal annealing optimization of Mg-implanted GaN: Evolution of surface, optical, and structural properties

    SciTech Connect (OSTI)

    Greenlee, Jordan D.; Feigelson, Boris N.; Anderson, Travis J.; Hite, Jennifer K.; Mastro, Michael A.; Eddy, Charles R.; Hobart, Karl D.; Kub, Francis J.; Tadjer, Marko J.

    2014-08-14

    The first step of a multi-cycle rapid thermal annealing process was systematically studied. The surface, structure, and optical properties of Mg implanted GaN thin films annealed at temperatures ranging from 900 to 1200?C were investigated by Raman spectroscopy, photoluminescence, UV-visible spectroscopy, atomic force microscopy, and Nomarski microscopy. The GaN thin films are capped with two layers of in-situ metal organic chemical vapor deposition -grown AlN and annealed in 24 bar of N{sub 2} overpressure to avoid GaN decomposition. The crystal quality of the GaN improves with increasing annealing temperature as confirmed by UV-visible spectroscopy and the full widths at half maximums of the E{sub 2} and A{sub 1} (LO) Raman modes. The crystal quality of films annealed above 1100?C exceeds the quality of the as-grown films. At 1200?C, Mg is optically activated, which is determined by photoluminescence measurements. However, at 1200?C, the GaN begins to decompose as evidenced by pit formation on the surface of the samples. Therefore, it was determined that the optimal temperature for the first step in a multi-cycle rapid thermal anneal process should be conducted at 1150?C due to crystal quality and surface morphology considerations.

  8. Utilization of native oxygen in Eu(RE)-doped GaN for enabling device compatibility in optoelectronic applications

    DOE PAGES-Beta [OSTI]

    Mitchell, Brandon; Timmerman, D.; Poplawsky, Jonathan D.; Zhu, W.; Lee, D.; Wakamatsu, R.; Takatsu, J.; Matsuda, M.; Guo, Wei; Lorenz, K.; et al

    2016-01-04

    The detrimental influence of oxygen on the performance and reliability of V/III nitride based devices is well known. However, the influence of oxygen on the nature of the incorporation of other co-dopants, such as rare earth ions, has been largely overlooked in GaN. Here, we report the first comprehensive study of the critical role that oxygen has on Eu in GaN, as well as atomic scale observation of diffusion and local concentration of both atoms in the crystal lattice. We find that oxygen plays an integral role in the location, stability, and local defect structure around the Eu ions thatmore » were doped into the GaN host. Although the availability of oxygen is essential for these properties, it renders the material incompatible with GaN-based devices. However, the utilization of the normally occurring oxygen in GaN is promoted through structural manipulation, reducing its concentration by 2 orders of magnitude, while maintaining both the material quality and the favorable optical properties of the Eu ions. Furthermore, these findings open the way for full integration of RE dopants for optoelectronic functionalities in the existing GaN platform.« less

  9. Research Facilities | NREL

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    Research Facilities Our state-of-the-art facilities are available to industry entrepreneurs, engineers, scientists, and universities for researching and developing their energy technologies. Our researchers and technicians who operate these labs and facilities are ready to work with you and share their expertise. Alphabetical Listings Laboratories Test and User Facilities Popular Facilities Energy Systems Integration Facility Integrated Biorefinery Research Facility Process Development

  10. ARM - Guest Instrument Facility

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    PlainsGuest Instrument Facility SGP Related Links Virtual Tour Facilities and Instruments Central Facility Boundary Facility Extended Facility Intermediate Facility Radiometric Calibration Facility Geographic Information ES&H Guidance Statement Operations Science Field Campaigns Visiting the Site Summer Training SGP Fact Sheet Images Information for Guest Scientists Contacts Guest Instrument Facility ARM's Guest Instrument Facility at the SGP site near Lamont, Oklahoma. ARM's Guest

  11. NREL: Research Facilities - Webmaster

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    Your name: Your email address: Your message: Send Message Printable Version Research Facilities Home Laboratories Test & User Facilities Laboratories & Facilities by Technology...

  12. Facilities | Bioenergy | NREL

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    Facilities At NREL's state-of-the-art bioenergy research facilities, researchers design ... facility to develop, test, evaluate, and demonstrate bioenergy processes and technologies. ...

  13. Research Facility,

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    Delivering the Data As a general condition for use of the ARM Climate Research Facility, users are required to include their data in the ARM Data Archive. All data acquired must be of sufficient quality to be useful and must be documented such that users will be able to clearly understand the meaning and organization of the data. Final, quality-assured data sets are stored in the Data Archive and are freely accessible to the general scientific community. Upon conclusion of the field campaign,

  14. Support - Facilities - Radiation Effects Facility / Cyclotron...

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    During experiments at the Radiation Effects Facility users are assisted by the experienced ... shops are available to the users of the Radiation Effects Facility for design, ...

  15. Radiation Effects Facility - Facilities - Cyclotron Institute

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    Radiation Effects Facility Typical DUT(device under test) set-up at the end of the Radiation Effects beamline. The Radiation Effects Facility is available for commercial, ...

  16. Harrisburg Facility Biomass Facility | Open Energy Information

    Open Energy Information (Open El) [EERE & EIA]

    2006 Database Retrieved from "http:en.openei.orgwindex.php?titleHarrisburgFacilityBiomassFacility&oldid397545" Feedback Contact needs updating Image needs updating...

  17. Brookhaven Facility Biomass Facility | Open Energy Information

    Open Energy Information (Open El) [EERE & EIA]

    2006 Database Retrieved from "http:en.openei.orgwindex.php?titleBrookhavenFacilityBiomassFacility&oldid397235" Feedback Contact needs updating Image needs updating...

  18. Energy Systems Integration Facility (ESIF): Facility Stewardship...

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    Energy Systems Integration Facility (ESIF) Facility Stewardship Plan Revision 2.0 ... laboratory of the U.S. Department of Energy Office of Energy Efficiency & Renewable ...

  19. Ab initio study on noncompensated CrO codoping of GaN for enhanced solar energy conversion

    SciTech Connect (OSTI)

    Pan, Hui; Gu, Baohua; Eres, Gyula; Zhang, Zhenyu

    2010-03-01

    We describe a novel photocatalyst obtained by codoping GaN with CrO, according to a new "noncompensated" codoping concept based on first-principles calculations. The approach enables controllable narrowing of the GaN band gap with significantly enhanced carrier mobility and photocatalytic activity in the visible light region and thus offers immense potential for application in solar energy conversion, water splitting, and a variety of solar-assisted photocatalysis. Our calculations indicate that the formation energy for the cation doping is greatly reduced by noncompensated codoping with an anion. Although Cr doping alone can split the band gap with the formation of an intermediate band, the mobility is low due to carrier trapping by the localized states. The first-principles calculations also demonstrate that CrO codoping of GaN shifts the Fermi level into the conduction band resulting in high carrier density and mobility.

  20. Dispersion and absorption of longitudinal electro-kinetic wave in ion-implanted GaN semiconductor plasmas

    SciTech Connect (OSTI)

    Soni, Dilip; Sharma, Giriraj; Saxena, Ajay; Jadhav, Akhilesh

    2015-07-31

    An analytical study on propagation characteristics of longitudinal electro-kinetic (LEK) waves is presented. Based on multi-fluid model of plasma, we have derived a dispersion relation for LEK waves in colloid laden GaN semiconductor plasmas. It is assumed that ions are implanted to form colloids in the GaN sample. The colloids are continuously bombarded by the plasma particles and stick on them, but they acquire a net negative charge due to relatively higher mobility of electrons. It is found from the dispersion relation that the presence of charged colloids not only modifies the existing modes but also supports new novel modes of LEKWs. It is hoped that the study would enhance understanding on dispersion and absorption of LEKWs and help in singling out the appropriate configurations in which GaN crystal would be better suited for fabrication of microwave devices.

  1. Properties of radio-frequency-sputter-deposited GaN films in a nitrogen/hydrogen mixed gas

    SciTech Connect (OSTI)

    Miyazaki, Takayuki; Takada, Kouhei; Adachi, Sadao; Ohtsuka, Kohji

    2005-05-01

    GaN films have been deposited by reactive sputtering in nitrogen gas at pressures from 0.08 to 2.70 Pa with and without the addition of hydrogen gas. X-ray diffraction (XRD), Fourier transform infrared (FTIR), optical absorption, and photoluminescence (PL) spectroscopy have been used to characterize the sputter-deposited GaN films. The XRD pattern reveals that the GaN films deposited in nitrogen gas at pressures lower than 0.53 Pa are polycrystals with the (0001) texture ({alpha}-GaN), while those deposited at or above 1.07 Pa display mixed crystalline orientations or an amorphous-like nature. The GaN:H films deposited in nitrogen/hydrogen mixed gas, on the other hand, show an amorphous or amorphous-like nature. The FTIR spectra indicate that the GaN:H films show peaks arising from hydrogen-related bonds at {approx}1000 and {approx}3200 cm{sup -1}, in addition to the GaN absorption band at {approx}555 cm{sup -1}. The optical absorption spectra at 300 K indicate the fundamental absorption edges at {approx}3.38 and {approx}3.7 eV for the highly oriented {alpha}-GaN and amorphous GaN:H films, respectively. PL emission has been observed from sputter-deposited {alpha}-GaN films at temperatures below 100 K. The GaN:H films also show strong band-edge and donor-acceptor pair emissions. The PL emission in the GaN:H film may arise from crystalline GaN particles embedded in the amorphous GaN matrix.

  2. Fundamental Bulk/Surface Structure Photoactivity Relationships of Supported (Rh2-yCryO3)/GaN Photocatalysts

    SciTech Connect (OSTI)

    Phivilay, Somphonh; Roberts, Charles; Puretzky, Alexander A; Domen, Kazunari Domen; Wachs, Israel

    2013-01-01

    ABSTRACT. The supported (Rh2-yCryO3)/GaN photocatalyst was examined as a model nitride photocatalyst system to assist in the development of fundamental structure photoactivity relationships for UV activated water splitting. Surface characterization of the outermost surface layers by High Sensitivity-LEIS and High Resolution-XPS revealed for the first time that the GaN support consists of a GaOx outermost surface layer and a thin film of GaOxNy in the surface region. HR-XPS also demonstrates that the supported (Rh2-yCryO3) mixed oxide nanoparticles (NPs) exclusively consist of Cr+3 and Rh+3 cations and are surface enriched for the supported (Rh2-yCryO3)/GaN photocatalyst. Bulk analysis by Raman and UV-vis spectroscopy show that the bulk molecular and electronic structures, respectively, of the GaN support are not perturbed by the deposition of the (Rh2-yCryO3) mixed oxide NPs. The function of the GaN bulk lattice is to generate photoexcited electrons/holes, with the electrons harnessed by the surface Rh+3 sites for evolution of H2 and the holes trapped at the Ga oxide/oxynitride surface sites for splitting of water and evolving O2. These new structure-photoactivity relationships for supported (Rh2-yCryO3)/GaN also extend to the best performing visible light activated supported (Rh2-yCryO3)/(Ga1-xZnx)(N1-xOx) photocatalyst.

  3. Kent County Waste to Energy Facility Biomass Facility | Open...

    Open Energy Information (Open El) [EERE & EIA]

    County Waste to Energy Facility Biomass Facility Jump to: navigation, search Name Kent County Waste to Energy Facility Biomass Facility Facility Kent County Waste to Energy...

  4. Stockton Regional Water Control Facility Biomass Facility | Open...

    Open Energy Information (Open El) [EERE & EIA]

    Stockton Regional Water Control Facility Biomass Facility Jump to: navigation, search Name Stockton Regional Water Control Facility Biomass Facility Facility Stockton Regional...

  5. Electroreflectance study of the effect of {gamma} radiation on the optical properties of epitaxial GaN films

    SciTech Connect (OSTI)

    Belyaev, A. E.; Klyui, N. I. Konakova, R. V.; Lukyanov, A. N.; Danilchenko, B. A.; Sveshnikov, J. N.; Klyui, A. N.

    2012-03-15

    Experimental data on the electroreflectance spectra of {gamma}-irradiated epitaxial GaN films on sapphire are reported. The irradiation doses are 10{sup 5}-2 Multiplication-Sign 10{sup 6} rad. The theoretical electroreflectance spectra calculated on the basis of a model of three types of transitions are in agreement with experimental data with reasonable accuracy. The energies and broadenings of the transitions derived in the context of the model give grounds to infer that, in the GaN films, there are internal stresses dependent on the {gamma}-irradiation dose.

  6. ARM - Facility News Article

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    December 4, 2010 [Facility News] Request for Proposals Now Open Bookmark and Share The ARM Climate Research Facility is now accepting applications for use of the ARM mobile facilities, aerial facility, and fixed sites. Proposals are welcome from all members of the scientific community for conducting field campaigns and scientific research using the ARM Facility. Facility availability is as follows: ARM Mobile Facility 2 (AMF2) available FY2013 ARM Mobile Facility 1 (AMF1) available March 2015

  7. Nanoscale size dependence parameters on lattice thermal conductivity of Wurtzite GaN nanowires

    SciTech Connect (OSTI)

    Mamand, S.M.; Omar, M.S.; Muhammad, A.J.

    2012-05-15

    Graphical abstract: Temperature dependence of calculated lattice thermal conductivity of Wurtzite GaN nanowires. Highlights: Black-Right-Pointing-Pointer A modified Callaway model is used to calculate lattice thermal conductivity of Wurtzite GaN nanowires. Black-Right-Pointing-Pointer A direct method is used to calculate phonon group velocity for these nanowires. Black-Right-Pointing-Pointer 3-Gruneisen parameter, surface roughness, and dislocations are successfully investigated. Black-Right-Pointing-Pointer Dislocation densities are decreases with the decrease of wires diameter. -- Abstract: A detailed calculation of lattice thermal conductivity of freestanding Wurtzite GaN nanowires with diameter ranging from 97 to 160 nm in the temperature range 2-300 K, was performed using a modified Callaway model. Both longitudinal and transverse modes are taken into account explicitly in the model. A method is used to calculate the Debye and phonon group velocities for different nanowire diameters from their related melting points. Effect of Gruneisen parameter, surface roughness, and dislocations as structure dependent parameters are successfully used to correlate the calculated values of lattice thermal conductivity to that of the experimentally measured curves. It was observed that Gruneisen parameter will decrease with decreasing nanowire diameters. Scattering of phonons is assumed to be by nanowire boundaries, imperfections, dislocations, electrons, and other phonons via both normal and Umklapp processes. Phonon confinement and size effects as well as the role of dislocation in limiting thermal conductivity are investigated. At high temperatures and for dislocation densities greater than 10{sup 14} m{sup -2} the lattice thermal conductivity would be limited by dislocation density, but for dislocation densities less than 10{sup 14} m{sup -2}, lattice thermal conductivity would be independent of that.

  8. Impact of the GaN nanowire polarity on energy harvesting

    SciTech Connect (OSTI)

    Gogneau, Noelle Galopin, Elisabeth; Guilet, Stephane; Travers, Laurent; Harmand, Jean-Christophe; Chrétien, Pascal; Houzé, Frédéric

    2014-05-26

    We investigate the piezoelectric generation properties of GaN nanowires (NWs) by atomic force microscopy equipped with a Resiscope module for electrical measurements. By correlating the topography profile of the NWs with the recorded voltage peaks generated by these nanostructures in response to their deformation, we demonstrate the influence of their polarity on the rectifying behavior of the Schottky diode formed between the NWs and the electrode of measurement. These results establish that the piezo-generation mechanism crucially depends on the structural characteristics of the NWs.

  9. Mechanism of the GaN LED efficiency falloff with increasing current

    SciTech Connect (OSTI)

    Bochkareva, N. I.; Voronenkov, V. V.; Gorbunov, R. I.; Zubrilov, A. S.; Lelikov, Y. S.; Latyshev, F. E.; Rebane, Y. T.; Tsyuk, A. I.; Shreter, Y. G.

    2010-06-15

    The quantum efficiency of GaN LED structures has been studied at various temperatures and biases. It was found that an efficiency falloff is observed with increasing current density and, simultaneously, the tunnel component of the current through the LED grows and the quasi-Fermi levels reach the mobility edge in the InGaN active layer. It is shown that the internal quantum efficiency falloff with increasing current density is due to the carrier leakage from the quantum well as a result of tunnel transitions from its band-tail states to local defect-related energy levels within the energy gaps of the barrier layers.

  10. Enhanced UV detection by non-polar epitaxial GaN films

    SciTech Connect (OSTI)

    Mukundan, Shruti; Chandan, Greeshma; Mohan, Lokesh; Krupanidhi, S. B.; Roul, Basanta; Shetty, Arjun

    2015-12-15

    Nonpolar a-GaN (11-20) epilayers were grown on r-plane (1-102) sapphire substrates using plasma assisted molecular beam epitaxy. High resolution x-ray diffractometer confirmed the orientation of the grown film. Effect of the Ga/N ratio on the morphology and strain of a-GaN epilayers was compared and the best condition was obtained for the nitrogen flow of 1 sccm. Atomic force microscopy was used to analyze the surface morphology while the strain in the film was quantitatively measured using Raman spectroscopy and qualitatively analyzed by reciprocal space mapping technique. UV photo response of a-GaN film was measured after fabricating a metal-semiconductor-metal structure over the film with gold metal. The external quantum efficiency of the photodetectors fabricated in the (0002) polar and (11-20) nonpolar growth directions were compared in terms of responsivity and nonpolar GaN showed the best sensitivity at the cost of comparatively slow response time.

  11. The effect of N-polar GaN domains as Ohmic contacts

    SciTech Connect (OSTI)

    Xie, J.; Mita, S.; Collazo, R.; Rice, A.; Tweedie, J.; Sitar, Z.

    2010-09-20

    Transfer line method measurements revealed that if the Ohmic contact regions were replaced by N-polar GaN, the contact resistance could be reduced from 0.71 {Omega} mm (or {rho}{sub c}=4x10{sup -6} {Omega} cm{sup 2}) to 0.24 {Omega} mm for a {approx}200 nm thick Si-doped GaN layer. The reduction in contact resistance was largely due to the {approx}10{sup 19} cm{sup -3} free carriers in N-polar source/drain regions as measured by Hall effect. Secondary ion mass spectroscopy confirmed that oxygen doping in the N-polar region was more than three orders of magnitude greater than that in the Ga-polar region that was explained by the large difference in the adsorption energy for oxygen ({approx}1.3 eV/atom) between the N- and Ga-polar surfaces during the metalorganic chemical vapor deposition.

  12. Excitation mechanisms of Er optical centers in GaN epilayers

    SciTech Connect (OSTI)

    George, D. K.; Hawkins, M. D.; McLaren, M.; Vinh, N. Q.; Jiang, H. X.; Lin, J. Y.; Zavada, J. M.

    2015-10-26

    We report direct evidence of two mechanisms responsible for the excitation of optically active Er{sup 3+} ions in GaN epilayers grown by metal-organic chemical vapor deposition. These mechanisms, resonant excitation via the higher-lying inner 4f shell transitions and band-to-band excitation of the semiconductor host, lead to narrow emission lines from isolated and the defect-related Er optical centers. However, these centers have different photoluminescence spectra, local defect environments, decay dynamics, and excitation cross sections. The photoluminescence at 1.54 μm from the isolated Er optical center which can be excited by either mechanism has the same decay dynamics, but possesses a much higher excitation cross-section under band-to-band excitation. In contrast, the photoluminescence at 1.54 μm from the defect-related Er optical center can only be observed through band-to-band excitation but has the largest excitation cross-section. These results explain the difficulty in achieving gain in Er doped GaN and indicate approaches for realization of optical amplification, and possibly lasing, at room temperature.

  13. Surfactant assisted growth of MgO films on GaN

    SciTech Connect (OSTI)

    Paisley, Elisibeth A.; Shelton, T C; Mita, S; Gaddy, Brian E.; Irving, D L; Christen, Hans M; Sitar, Z; Biegalski, Michael D; Maria, Jon Paul

    2012-01-01

    Thin epitaxial films of <111> oriented MgO on [0001]-oriented GaN were grown by molecular beam epitaxy (MBE) and pulsed laser deposition (PLD) using the assistance of a vapor phase surfactant. In both cases, surfactant incorporation enabled layer-by-layer growth and a smooth terminal surface due to stabilizing the {111} rocksalt facet. MBE growth of MgO in water terminates after several monolayers, and is attributed to saturation of surface active sites needed to facilitate the Mg oxidation reaction. MgO films prepared by PLD grow continuously, this occurs due to the presence of excited oxidizing species in the laser plasma eliminate the need for catalytic surface sites. Metal-insulator-semiconductor capacitor structures were fabricated on n-type GaN. A comparison of leakage current density for conventional and surfactant-assisted growth reveals a nearly two order of magnitude reduction in leakage current density for the smoother surfactant-assisted samples. Collectively, these data verify numerous predictions and calculations regarding the role of H-termination in regulating the habit of MgO crystals.

  14. Direct spontaneous growth and interfacial structural properties of inclined GaN nanopillars on r-plane sapphire

    SciTech Connect (OSTI)

    Adikimenakis, A.; Aretouli, K. E.; Tsagaraki, K.; Androulidaki, M.; Georgakilas, A.; Lotsari, A.; Dimitrakopulos, G. P. Kehagias, Th.; Komninou, Ph.

    2015-06-28

    The spontaneous growth of GaN nanopillars (NPs) by direct plasma-assisted molecular beam epitaxy on nitridated r-plane sapphire substrates has been studied. The emanation of metal-polarity NPs from inside an a-plane nonpolar GaN film was found to depend on both the substrate nitridation and the growth conditions. The density of NPs increased with increasing the duration of the nitridation process and the power applied on the radio-frequency plasma source, as well as the III/V flux ratio, while variation of the first two parameters enhanced the roughness of the substrate's surface. Transmission electron microscopy (TEM) techniques were employed to reveal the structural characteristics of the NPs and their nucleation mechanism from steps on the sapphire surface and/or interfacial semipolar GaN nanocrystals. Lattice strain measurements showed a possible Al enrichment of the first 5–6 monolayers of the NPs. By combining cross-sectional and plan-view TEM observations, the three-dimensional model of the NPs was constructed. The orientation relationship and interfacial accommodation between the NPs and the nonpolar a-plane GaN film were also elucidated. The NPs exhibited strong and narrow excitonic emission, suggesting an excellent structural quality.

  15. Growth modes of InN(000-1) on GaN buffer layers on sapphire

    SciTech Connect (OSTI)

    Liu, Bing; Kitajima, Takeshi; Chen, Dongxue; Leone, Stephen R.

    2005-01-24

    In this work, using atomic force microscopy and scanning tunneling microscopy, we study the surface morphologies of epitaxial InN films grown by plasma-assisted molecular beam epitaxy with intervening GaN buffer layers on sapphire substrates. On smooth GaN buffer layers, nucleation and evolution of three-dimensional InN islands at various coverages and growth temperatures are investigated. The shapes of the InN islands are observed to be predominantly mesa-like with large flat (000-1) tops, which suggests a possible role of indium as a surfactant. Rough GaN buffer layers composed of dense small GaN islands are found to significantly improve uniform InN wetting of the substrates, on which atomically smooth InN films are obtained that show the characteristics of step-flow growth. Scanning tunneling microscopy imaging reveals the defect-mediated surface morphology of smooth InN films, including surface terminations of screw dislocations and a high density of shallow surface pits with depths less than 0.3 nm. The mechanisms of the three-dimensional island size and shape evolution and formation of defects on smooth surfaces are considered.

  16. Impact of defects on the electrical transport, optical properties and failure mechanisms of GaN nanowires.

    SciTech Connect (OSTI)

    Armstrong, Andrew M.; Aubry, Sylvie; Shaner, Eric Arthur; Siegal, Michael P.; Li, Qiming; Jones, Reese E.; Westover, Tyler; Wang, George T.; Zhou, Xiao Wang; Talin, Albert Alec; Bogart, Katherine Huderle Andersen; Harris, C. Thomas; Huang, Jian Yu

    2010-09-01

    We present the results of a three year LDRD project that focused on understanding the impact of defects on the electrical, optical and thermal properties of GaN-based nanowires (NWs). We describe the development and application of a host of experimental techniques to quantify and understand the physics of defects and thermal transport in GaN NWs. We also present the development of analytical models and computational studies of thermal conductivity in GaN NWs. Finally, we present an atomistic model for GaN NW electrical breakdown supported with experimental evidence. GaN-based nanowires are attractive for applications requiring compact, high-current density devices such as ultraviolet laser arrays. Understanding GaN nanowire failure at high-current density is crucial to developing nanowire (NW) devices. Nanowire device failure is likely more complex than thin film due to the prominence of surface effects and enhanced interaction among point defects. Understanding the impact of surfaces and point defects on nanowire thermal and electrical transport is the first step toward rational control and mitigation of device failure mechanisms. However, investigating defects in GaN NWs is extremely challenging because conventional defect spectroscopy techniques are unsuitable for wide-bandgap nanostructures. To understand NW breakdown, the influence of pre-existing and emergent defects during high current stress on NW properties will be investigated. Acute sensitivity of NW thermal conductivity to point-defect density is expected due to the lack of threading dislocation (TD) gettering sites, and enhanced phonon-surface scattering further inhibits thermal transport. Excess defect creation during Joule heating could further degrade thermal conductivity, producing a viscous cycle culminating in catastrophic breakdown. To investigate these issues, a unique combination of electron microscopy, scanning luminescence and photoconductivity implemented at the nanoscale will be used in

  17. Sandia National Laboratories: Facilities

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    Facilities Bioscience Computing and Information Science Electromagnetics Facilities Electromagnetic Environments Simulator (EMES) Mode Stirred Chamber Lightning Facility Electrostatic Discharge (ESD) Laboratory Other Facilities and Capabilities Programs & Capabilities Partnership Opportunities EM News & Reports Contact Information Engineering Science Geoscience Materials Science Nanodevices and Microsystems Radiation Effects and High Energy Density Science Research Facilities

  18. CMI Unique Facility: Ferromagnetic Materials Characterization Facility |

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    Critical Materials Institute Ferromagnetic Materials Characterization Facility The Ferromagnetic Materials Characterization Facility is one of more than a dozen unique facilities developed by the Critical Materials Institute, an Energy Innovation Hub of the U.S. Department of Energy. CMI ferromagnetic materials characterization facility at The Ames Laboratory. In the search for substitute materials to replace rare earths in permanent magnets, whenever promising materials are identified,

  19. ARM - Facility News Article

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    20, 2010 Facility News ARM Mobile Facility Blogs from Steamboat Springs Bookmark and Share This month, team members for the second ARM Mobile Facility (AMF2) are in Steamboat...

  20. ARM - Facility News Article

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    April 7, 2011 Facility News Review Panel States ARM Facility "Without Peer" Bookmark and ... The latest ARM Facility review was conducted in mid-February by a six-member review panel ...

  1. McKay Bay Facility Biomass Facility | Open Energy Information

    Open Energy Information (Open El) [EERE & EIA]

    Biomass Facility Facility McKay Bay Facility Sector Biomass Facility Type Municipal Solid Waste Location Hillsborough County, Florida Coordinates 27.9903597, -82.3017728...

  2. National User Facilities

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    National User Facilities Our Vision National User Facilities Research Areas In Focus Global Solutions ⇒ Navigate Section Our Vision National User Facilities Research Areas In Focus Global Solutions Berkeley Lab's User Facilities-Engines of Discovery Berkeley Lab's User Facilities provide state-of-the-art resources for scientists across the nation and around the world. About 10,000 researchers a year use these facilities, representing nearly one third of the total for all Department of Energy

  3. Tellurium n-type doping of highly mismatched amorphous GaN1-xAsx alloys in plasma-assisted molecular beam epitaxy

    DOE PAGES-Beta [OSTI]

    Novikov, S. V.; Ting, M.; Yu, K. M.; Sarney, W. L.; Martin, R. W.; Svensson, S. P.; Walukiewicz, W.; Foxon, C. T.

    2014-10-01

    In this paper we report our study on n-type Te doping of amorphous GaN1-xAsx layers grown by plasma-assisted molecular beam epitaxy. We have used a low temperature PbTe source as a source of tellurium. Reproducible and uniform tellurium incorporation in amorphous GaN1-xAsx layers has been successfully achieved with a maximum Te concentration of 9×10²⁰ cm⁻³. Tellurium incorporation resulted in n-doping of GaN1-xAsx layers with Hall carrier concentrations up to 3×10¹⁹ cm⁻³ and mobilities of ~1 cm²/V s. The optimal growth temperature window for efficient Te doping of the amorphous GaN1-xAsx layers has been determined.

  4. Effects of GaN interlayer on the transport properties of lattice-matched AlInN/AlN/GaN heterostructures

    SciTech Connect (OSTI)

    Wu, F.; Gao, K. H. Li, Z. Q.; Lin, T.; Zhou, W. Z.

    2015-04-21

    We study the effects of GaN interlayer on the transport properties of two-dimensional electron gases confined in lattice-matched AlInN/AlN/GaN heterostructures. It is found that the Hall mobility is evidently enhanced when an additional ultrathin GaN interlayer is introduced between AlInN and AlN layers. The enhancement of the Hall mobility is especially remarkable at low temperature. The high Hall mobility results in a low sheet resistance of 23 Ω/◻ at 2 K. Meanwhile, Shubnikov-de Haas oscillations (SdH) are also remarkably enhanced due to the existence of GaN interlayer. The enhancement of the SdH oscillations is related to the larger quantum mobility μ{sub q} owing to the suppression of the interface roughness, alloy disorder, and ionized impurity scatterings by the GaN interlayer.

  5. ARM - Facility News Article

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    30, 2009 Facility News ARM Aerial Facility Leads International Discussions on Aircraft Research Bookmark and Share Five research aircraft participated in the VAMOS...

  6. ARM - Facility News Article

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    (BERAC) published findings and recommendations from their assessment of the effectiveness of ARM Climate Research Facility as a national scientific user facility. Based on...

  7. Facilities | Photovoltaic Research | NREL

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    the facilities below in their research and development to provide foundational support for the photovoltaic (PV) industry and PV users. Photo of the Solar Research Energy Facility. ...

  8. Facilities, Partnerships, and Resources

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    Nuclear Energy Defense Waste Management Programs Advanced Nuclear Energy Nuclear Energy Safety Technologies Facilities Battery Abuse Testing Laboratory Cylindrical Boiling Facility ...

  9. ARM - Facility News Article

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    13, 2014 Facility News Characterizing Ice Nuclei Over Southern Great Plains Bookmark and Share Placed on the upper platform of the SGP Guest Instrument Facility, this filter...

  10. ARM Climate Research Facility

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    3 ARM Climate Research Facility Quarterly Ingest Status Report A Koontz C Sivaraman ... DOESC-ARM-14-003 ARM Climate Research Facility Quarterly Ingest Report First Quarter: ...

  11. ARM Climate Research Facility

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    8 ARM Climate Research Facility Quarterly Ingest Status Report A Koontz C Sivaraman ... DOESC-ARM-14-028 ARM Climate Research Facility Quarterly Ingest Report Fourth Quarter: ...

  12. ARM Climate Research Facility

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    3 ARM Climate Research Facility Quarterly Ingest Status Report A Koontz C Sivaraman ... DOESC-ARM-15-003 ARM Climate Research Facility Quarterly Ingest Report First Quarter: ...

  13. ARM Climate Research Facility

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    DOESC-ARM-15-020 ARM Climate Research Facility Quarterly Ingest Report Second Quarter: ... maintained by the Atmospheric Radiation Measurement (ARM) Climate Research Facility. ...

  14. ARM Climate Research Facility

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    ARM Climate Research Facility Quarterly Ingest Status Report A Koontz C Sivaraman April ... DOESC-ARM-14-014 ARM Climate Research Facility Quarterly Ingest Report Second Quarter: ...

  15. ARM - Facility News Article

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    Journal Special Issue Includes Mobile Facility Data from Germany Bookmark and Share The ARM Mobile Facility operated in Heselbach, Germany, as part of the COPS surface network. The ...

  16. ARM - Facility News Article

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    of instruments collecting data for the ARM Mobile Facility field campaign at Point Reyes National Seashore. Since March 2005, the ARM Mobile Facility (AMF) has been at Point...

  17. ARM - Facility News Article

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    the SGP site, and will begin in March for the ARM Mobile Facility deployment in Point Reyes, California. Launches for the ARM Climate Research Facility Tropical Western Pacific...

  18. ARM - Facility News Article

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    a number of other guest instruments at the ARM Mobile Facility deployment site at Point Reyes National Seashore in California. The ARM Mobile Facility's (AMF's) inaugural field...

  19. Facilities | Argonne National Laboratory

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    Additionally, the 4 Tesla Magnet Facility reuses hospital MRI magnets to provide benchmarking for new muon experiments that will be performed at Fermilab. 4 Tesla Magnet Facility ...

  20. ARM - Facility News Article

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    Interferometers Compared for ARM Mobile Facility Deployment in China Bookmark and Share ... Mobile Facility in 2008 for a field campaign to study Aerosol Indirect Effects in China. ...

  1. ARM - Facility News Article

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    January 11, 2007 Facility News ARM Mobile Facility Moves to China in 2008 for Study of ... China generates exceptionally high amounts of aerosol particles whose influence on the ...

  2. Facilities | Argonne National Laboratory

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    Research Facility Distributed Energy Research Center Engine Research Facility Heat Transfer Laboratory Tribology Laboratory Transportation Beamline at the Advanced Photon Source...

  3. NREL: Biomass Research - Facilities

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    Facilities At NREL's state-of-the-art biomass research facilities, researchers design and optimize processes to convert renewable biomass feedstocks into transportation fuels and...

  4. ARM - NSA Barrow Facility

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    Barrow Facility NSA Related Links Facilities and Instruments Barrow Atqasuk Oliktok Point (AMF3) ES&H Guidance Statement Operations Science Field Campaigns Visiting the Site NSA...

  5. ARM - Facility News Article

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    November 9, 2012 Facility News Unmanned Aircraft Test Flights Completed at Oliktok Point ... for the ARM Facility to evaluate various unmanned aerial systems (UAS) in the frigid ...

  6. ARM - Facility News Article

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    May 15, 2008 Facility News National User Facility Organization Meets to Discuss Progress and Ideas Bookmark and Share In late April, the ARM Technical Director attended an annual...

  7. ARM - Facility News Article

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    March 15, 2010 Facility News Closing in on Aircraft Campaign in California Bookmark and ... and Radiative Effects Study (CARES) in California, the ARM Aerial Facility is putting the ...

  8. ARM - Facility News Article

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    February 28, 2006 Facility News Network of Infrared Thermometers Nearly Complete at SGP Bookmark and Share Red dots indicate extended facilities at SGP with the new IRTs ...

  9. ARM - Facility News Article

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    15, 2005 Facility News Aging, Overworked Computer Network at SGP Gets Overhauled Bookmark and Share This aerial map of instruments deployed at the SGP Central Facility provides...

  10. ARM - Facility News Article

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    to our new ARM News Center. The RSS feed will alert readers to the latest ARM science and ARM Climate Research Facility news, events, feature stories, facility updates,...

  11. ARM - Facility News Article

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    facility use by total visitor days and facility to track actual visitors and active user research computer accounts. Historical data show an apparent relationship between the...

  12. ARM - SGP Radiometric Calibration Facility

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    Radiometric Calibration Facility SGP Related Links Virtual Tour Facilities and Instruments Central Facility Boundary Facility Extended Facility Intermediate Facility Radiometric Calibration Facility Geographic Information ES&H Guidance Statement Operations Science Field Campaigns Visiting the Site Summer Training SGP Fact Sheet Images Information for Guest Scientists Contacts SGP Radiometric Calibration Facility The Radiometric Calibration Facility (RCF) provides shortwave radiometer

  13. Guide to research facilities

    SciTech Connect (OSTI)

    Not Available

    1993-06-01

    This Guide provides information on facilities at US Department of Energy (DOE) and other government laboratories that focus on research and development of energy efficiency and renewable energy technologies. These laboratories have opened these facilities to outside users within the scientific community to encourage cooperation between the laboratories and the private sector. The Guide features two types of facilities: designated user facilities and other research facilities. Designated user facilities are one-of-a-kind DOE facilities that are staffed by personnel with unparalleled expertise and that contain sophisticated equipment. Other research facilities are facilities at DOE and other government laboratories that provide sophisticated equipment, testing areas, or processes that may not be available at private facilities. Each facility listing includes the name and phone number of someone you can call for more information.

  14. Highly c-axis oriented GaN films grown on free-standing diamond substrates for high-power devices

    SciTech Connect (OSTI)

    Zhang, D. [School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 116024 (China) [School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 116024 (China); Key Laboratory of Materials Modification by Laser, Ion and Electron Beams, Ministry of Education, Dalian University of Technology, Dalian 116024 (China); Bian, J.M., E-mail: jmbian@dlut.edu.cn [School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 116024 (China); Qin, F.W.; Wang, J.; Pan, L. [School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 116024 (China) [School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 116024 (China); Key Laboratory of Materials Modification by Laser, Ion and Electron Beams, Ministry of Education, Dalian University of Technology, Dalian 116024 (China); Zhao, J.M. [School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 116024 (China)] [School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 116024 (China); Zhao, Y.; Bai, Y.Z. [School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 116024 (China) [School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 116024 (China); Key Laboratory of Materials Modification by Laser, Ion and Electron Beams, Ministry of Education, Dalian University of Technology, Dalian 116024 (China); Du, G.T. [School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 116024 (China)] [School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 116024 (China)

    2011-10-15

    Highlights: {yields} GaN films are deposited on diamond substrates by ECR-PEMOCVD. {yields} Influence of deposition temperature on the properties of samples is investigated. {yields} Properties of GaN films are dependent on the deposition temperature. -- Abstract: GaN films with highly c-axis preferred orientation are deposited on free-standing thick diamond films by low temperature electron cyclotron resonance plasma enhanced metal organic chemical vapor deposition (ECR-PEMOCVD). The TMGa and N{sub 2} are applied as precursors of Ga and N, respectively. The quality of as-grown GaN films are systematically investigated as a function of deposition temperature by means of X-ray diffraction (XRD) analysis, Hall Effect measurement (HL), room temperature photoluminescence (PL) and atomic force microscopy (AFM). The results show that the dense and uniformed GaN films with highly c-axis preferred orientation are successfully achieved on free-standing diamond substrates under optimized deposition temperature of 400 {sup o}C, and the room temperature PL spectra of the optimized GaN film show a intense ultraviolet near band edge emission and a weak yellow luminescence. The obtained GaN/diamond structure has great potential for the development of high-power semiconductor devices due to its excellent heat dissipation nature.

  15. Effect of ZnO seed layer on the morphology and optical properties of ZnO nanorods grown on GaN buffer layers

    SciTech Connect (OSTI)

    Nandi, R. Mohan, S. Major, S. S.; Srinivasa, R. S.

    2014-04-24

    ZnO nanorods were grown by chemical bath deposition on sputtered, polycrystalline GaN buffer layers with and without ZnO seed layer. Scanning electron microscopy and X-ray diffraction show that the ZnO nanorods on GaN buffer layers are not vertically well aligned. Photoluminescence spectrum of ZnO nanorods grown on GaN buffer layer, however exhibits a much stronger near-band-edge emission and negligible defect emission, compared to the nanorods grown on ZnO buffer layer. These features are attributed to gallium incorporation at the ZnO-GaN interface. The introduction of a thin (25 nm) ZnO seed layer on GaN buffer layer significantly improves the morphology and vertical alignment of ZnO-NRs without sacrificing the high optical quality of ZnO nanorods on GaN buffer layer. The presence of a thick (200 nm) ZnO seed layer completely masks the effect of the underlying GaN buffer layer on the morphology and optical properties of nanorods.

  16. The possibly important role played by Ga{sub 2}O{sub 3} during the activation of GaN photocathode

    SciTech Connect (OSTI)

    Fu, Xiaoqian E-mail: 214808748@qq.com; Wang, Honggang; Zhang, Junju; Li, Zhiming; Cui, Shiyao; Zhang, Lejuan

    2015-08-14

    Three different chemical solutions are used to remove the possible contamination on GaN surface, while Ga{sub 2}O{sub 3} is still found at the surface. After thermal annealing at 710 °C in the ultrahigh vacuum (UHV) chamber and activated with Cs/O, all the GaN samples are successfully activated to the effective negative electron affinity (NEA) photocathodes. Among all samples, the GaN sample with the highest content of Ga{sub 2}O{sub 3} after chemical cleaning obtains the highest quantum efficiency. By analyzing the property of Ga{sub 2}O{sub 3}, the surface processing results, and electron affinity variations during Cs and Cs/O{sub 2} deposition on GaN of other groups, it is suggested that before the adsorption of Cs, Ga{sub 2}O{sub 3} is not completely removed from GaN surface in our samples, which will combine with Cs and lead to a large decrease in electron affinity. Furthermore, the effective NEA is formed for GaN photocathode, along with the surface downward band bending. Based on this assumption, a new dipole model Ga{sub 2}O{sub 3}-Cs is suggested, and the experimental effects are explained and discussed.

  17. Demonstration of forward inter-band tunneling in GaN by polarization engineering

    SciTech Connect (OSTI)

    Krishnamoorthy, Sriram; Park, Pil Sung; Rajan, Siddharth

    2011-12-05

    We report on the design, fabrication, and characterization of GaN interband tunnel junction showing forward tunneling characteristics. We have achieved very high forward tunneling currents (153 mA/cm{sup 2} at 10 mV, and 17.7 A/cm{sup 2} peak current) in polarization-engineered GaN/InGaN/GaN heterojunction diodes grown by plasma assisted molecular beam epitaxy. We also report the observation of repeatable negative differential resistance in interband III-Nitride tunnel junctions, with peak-valley current ratio of 4 at room temperature. The forward current density achieved in this work meets the typical current drive requirements of a multi-junction solar cell.

  18. Influence of the adatom diffusion on selective growth of GaN nanowire regular arrays

    SciTech Connect (OSTI)

    Gotschke, T.; Schumann, T.; Limbach, F.; Calarco, R.; Stoica, T.

    2011-03-07

    Molecular beam epitaxy (MBE) on patterned Si/AlN/Si(111) substrates was used to obtain regular arrays of uniform-size GaN nanowires (NWs). The silicon top layer has been patterned with e-beam lithography, resulting in uniform arrays of holes with different diameters (d{sub h}) and periods (P). While the NW length is almost insensitive to the array parameters, the diameter increases significantly with d{sub h} and P till it saturates at P values higher than 800 nm. A diffusion induced model was used to explain the experimental results with an effective diffusion length of the adatoms on the Si, estimated to be about 400 nm.

  19. Monolithic single GaN nanowire laser with photonic crystal microcavity on silicon

    SciTech Connect (OSTI)

    Heo, Junseok; Guo Wei; Bhattacharya, Pallab

    2011-01-10

    Optically pumped lasing at room temperature in a silicon based monolithic single GaN nanowire with a two-dimensional photonic crystal microcavity is demonstrated. Catalyst-free nanowires with low density ({approx}10{sup 8} cm{sup -2}) are grown on Si by plasma-assisted molecular beam epitaxy. High resolution transmission electron microscopy images reveal that the nanowires are of wurtzite structure and they have no observable defects. A single nanowire laser fabricated on Si is characterized by a lasing transition at {lambda}=371.3 nm with a linewidth of 0.55 nm. The threshold is observed at a pump power density of {approx}120 kW/cm{sup 2} and the spontaneous emission factor {beta} is estimated to be 0.08.

  20. Resonant energy transfer between Eu luminescent sites and their local geometry in GaN

    SciTech Connect (OSTI)

    Timmerman, Dolf; Wakamatsu, Ryuta; Tanaka, Kazuteru; Lee, Dong-gun; Koizumi, Atsushi; Fujiwara, Yasufumi

    2015-10-12

    Eu-doped GaN is a solid state material with promising features for quantum manipulation. In this study, we investigate the population dynamics of Eu in ions in this system by resonant excitation. From differences in the emission related to transitions between the {sup 5}D{sub 0} and {sup 7}F{sub 2} manifold in the Eu ions, we can distinguish different luminescence sites and observe that a resonant energy transfer takes place between two of these sites which are in proximity of each other. The time constants related to this energy transfer are on the order of 100 μs. By using different substrates, the energy transfer efficiency could be strongly altered, and it is demonstrated that the coupling between ions has an out-of-plane character. Based on these results, a microscopic model of this combined center is presented.

  1. ARM - Facility News Article

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    22, 2011 [Facility News] Request for Proposals Now Open Bookmark and Share The ARM Climate Research Facility is now accepting applications for use of an ARM mobile facility (AMF), the ARM aerial facility (AAF), and fixed sites. Proposals are welcome from all members of the scientific community for conducting field campaigns and scientific research using the ARM Facility, with availability as follows: AMF2 available December 2013 AMF1 available March 2015 AAF available between June and October

  2. Facilities | Argonne National Laboratory

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    Facilities Argonne's Chemical Sciences and Engineering (CSE) division maintains a number of state-of-the-art facilities for advanced chemistry research. These facilities are dedicated to two main purposes: the analysis and creation of next-generation battery materials, and the analysis and generation of advanced catalysts for electrochemistry. More information on the full suite of CSE facilities can be found below. Advanced Electron Paramagnetic Resonance (EPR) Facility The Solar Energy

  3. Performance and breakdown characteristics of irradiated vertical power GaN P-i-N diodes

    SciTech Connect (OSTI)

    King, M. P.; Armstrong, A. M.; Dickerson, J. R.; Vizkelethy, G.; Fleming, R. M.; Campbell, J.; Wampler, W. R.; Kizilyalli, I. C.; Bour, D. P.; Aktas, O.; Nie, H.; Disney, D.; Wierer, Jr., J.; Allerman, A. A.; Moseley, M. W.; Kaplar, R. J.

    2015-10-29

    Electrical performance and defect characterization of vertical GaN P-i-N diodes before and after irradiation with 2.5 MeV protons and neutrons is investigated. Devices exhibit increase in specific on-resistance following irradiation with protons and neutrons, indicating displacement damage introduces defects into the p-GaN and n- drift regions of the device that impact on-state device performance. The breakdown voltage of these devices, initially above 1700 V, is observed to decrease only slightly for particle fluence <; 1013 cm-2. Furthermore, the unipolar figure of merit for power devices indicates that while the on-resistance and breakdown voltage degrade with irradiation, vertical GaN P-i-Ns remain superior to the performance of the best available, unirradiated silicon devices and on-par with unirradiated modern SiC-based power devices.

  4. Efficient Switches for Solar Power Conversion: Four Quadrant GaN Switch Enabled Three Phase Grid-Tied Microinverters

    SciTech Connect (OSTI)

    2012-02-13

    Solar ADEPT Project: Transphorm is developing power switches for new types of inverters that improve the efficiency and reliability of converting energy from solar panels into useable electricity for the grid. Transistors act as fast switches and control the electrical energy that flows in an electrical circuit. Turning a transistor off opens the circuit and stops the flow of electrical current; turning it on closes the circuit and allows electrical current to flow. In this way a transistor can be used to convert DC from a solar panel into AC for use in a home. Transphorm’s transistors will enable a single semiconductor device to switch electrical currents at high-voltage in both directions—making the inverter more compact and reliable. Transphorm is using Gallium Nitride (GaN) as a semiconductor material in its transistors instead of silicon, which is used in most conventional transistors, because GaN transistors have lower losses at higher voltages and switching frequencies.

  5. Method of growing GaN films with a low density of structural defects using an interlayer

    DOE Patents [OSTI]

    Bourret-Courchesne, Edith D.

    2003-01-01

    A dramatic reduction of the dislocation density in GaN was obtained by insertion of a single thin interlayer grown at an intermediate temperature (IT-IL) after the growth of an initial grown at high temperature. A description of the growth process is presented with characterization results aimed at understanding the mechanisms of reduction in dislocation density. A large percentage of the threading dislocations present in the first GaN epilayer are found to bend near the interlayer and do not propagate into the top layer which grows at higher temperature in a lateral growth mode. TEM studies show that the mechanisms of dislocation reduction are similar to those described for the epitaxial lateral overgrowth process, however a notable difference is the absence of coalescence boundaries.

  6. Propagation of electro-kinetic waves in magnetized GaN semiconductor with nano-sized ion colloids

    SciTech Connect (OSTI)

    Saxena, Ajay; Sharma, Giriraj; Jat, K. L.; Rishi, M. P.

    2015-07-31

    Based on hydrodynamic model of multi-component plasma, an analytical study on propagation of longitudinal electro-kinetic (LEK) waves in wurtzite and zincblende structures of GaN is carried out. Nano-sized ion colloids (NICs) are embedded in the sample by the technique of ion-implantation. The implanted NICs are considered massive by an order as compared to the host lattice points and do not participate in Based LEK perturbations. Though, the NICs are continuously bombarded by the electrons as well as the holes yet, the former acquires a net negative charge owing to relatively higher mobility of electrons and consequently results into depletion of electron density in the medium. It i s found that the presence of charged NICs significantly modifies the dispersion and amplification characteristics of LEK waves in magnetized GaN semiconductor plasma and their role becomes increasingly effective as the fraction of charge on them increases.

  7. Calibration Facilities | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    Calibration Facilities Calibration Facilities Calibration Facilities Calibration Facilities Calibration Facilities Calibration Facilities DOE supports the development, standardization, and maintenance of calibration facilities for environmental radiation sensors. Radiation standards at the facilities are primarily used to calibrate portable surface gamma-ray survey meters and borehole logging instruments used for uranium and other mineral exploration and remedial action measurements. Standards

  8. The E2/M1 mixing ratio in the excitation of the {Delta} from polarized photo-reactions

    SciTech Connect (OSTI)

    The LEGS Collaboration

    1993-12-01

    In constituent quark models, a tensor interaction, mixing quark spins with their relative motion, is introduced to reproduce the observed baryon spectrum. This has a consequence completely analogous to the nuclear tensor force between the n and p in deuterium. A D state component is mixed into what would otherwise be a purely S-wave object. The D-wave component breaks spherical symmetry, resulting in a non-vanishing matrix element for the nucleon and a static quadrupole moment and deformation for its first excited state, the {Delta} resonance, at {approximately}325 MeV. The magnitude and sign of this D-state component are quite sensitive to the internal structure of the proton and have been of great interest in recent years. The intrinsic deformation of the spin 1/2 nucleon cannot be observed directly; it must be inferred from transition amplitudes such as N {yields} {Delta}. In a spherical bag model, the {Delta} is viewed as a pure quark-spin-flip transition proceeding only through M1 excitation. If there are D-state admixtures in the ground state of the nucleon and/or {Delta}, quadrupole excitation, in addition to spin-flip M1, is also allowed. The problem is to evaluate the relative magnitude of this E2 excitation in the presence of the dominant M1 transition. A variety of models predict this mixing ratio to be quite small, anywhere from {minus}0.9% to {minus}6%, so that a high degree of precision is demanded of experiment.

  9. Elimination of surface band bending on N-polar InN with thin GaN capping

    SciTech Connect (OSTI)

    Kuzmík, J. Haščík, Š.; Kučera, M.; Kúdela, R.; Dobročka, E.; Adikimenakis, A.; Mičušík, M.; Gregor, M.; Plecenik, A.; Georgakilas, A.

    2015-11-09

    0.5–1 μm thick InN (0001) films grown by molecular-beam epitaxy with N- or In-polarity are investigated for the presence of native oxide, surface energy band bending, and effects introduced by 2 to 4 monolayers of GaN capping. Ex situ angle-resolved x-ray photo-electron spectroscopy is used to construct near-surface (GaN)/InN energy profiles, which is combined with deconvolution of In3d signal to trace the presence of InN native oxide for different types of polarity and capping. Downwards surface energy band bending was observed on bare samples with native oxide, regardless of the polarity. It was found that the In-polar InN surface is most readily oxidized, however, with only slightly less band bending if compared with the N-polar sample. On the other hand, InN surface oxidation was effectively mitigated by GaN capping. Still, as confirmed by ultra-violet photo-electron spectroscopy and by energy band diagram calculations, thin GaN cap layer may provide negative piezoelectric polarization charge at the GaN/InN hetero-interface of the N-polar sample, in addition to the passivation effect. These effects raised the band diagram up by about 0.65 eV, reaching a flat-band profile.

  10. GaN nanowires with pentagon shape cross-section by ammonia-source molecular beam epitaxy

    DOE PAGES-Beta [OSTI]

    Lin, Yong; Leung, Benjamin; Li, Qiming; Figiel, Jeffrey J.; Wang, George T.

    2015-07-14

    In this study, ammonia-based molecular beam epitaxy (NH3-MBE) was used to grow catalyst-assisted GaN nanowires on (11¯02) r-plane sapphire substrates. Dislocation free [112¯0] oriented nanowires are formed with pentagon shape cross-section, instead of the usual triangular shape facet configuration. Specifically, the cross-section is the result of the additional two nonpolar {101¯0} side facets, which appear due to a decrease in relative growth rate of the {101¯0} facets to the {101¯1} and {101¯1} facets under the growth regime in NH3-MBE. Compared to GaN nanowires grown by Ni-catalyzed metal–organic chemical vapor deposition, the NH3-MBE grown GaN nanowires show more than an ordermore » of magnitude increase in band-edge to yellow luminescence intensity ratio, as measured by cathodoluminescence, indicating improved microstructural and optical properties.« less

  11. Transistors for Electric Motor Drives: High-Performance GaN HEMT Modules for Agile Power Electronics

    SciTech Connect (OSTI)

    2010-09-01

    ADEPT Project: Transphorm is developing transistors with gallium nitride (GaN) semiconductors that could be used to make cost-effective, high-performance power converters for a variety of applications, including electric motor drives which transmit power to a motor. A transistor acts like a switch, controlling the electrical energy that flows around an electrical circuit. Most transistors today use low-cost silicon semiconductors to conduct electrical energy, but silicon transistors don’t operate efficiently at high speeds and voltage levels. Transphorm is using GaN as a semiconductor material in its transistors because GaN performs better at higher voltages and frequencies, and it is more energy efficient than straight silicon. However, Transphorm is using inexpensive silicon as a base to help keep costs low. The company is also packaging its transistors with other electrical components that can operate quickly and efficiently at high power levels—increasing the overall efficiency of both the transistor and the entire motor drive.

  12. GaN nanowires with pentagon shape cross-section by ammonia-source molecular beam epitaxy

    SciTech Connect (OSTI)

    Lin, Yong; Leung, Benjamin; Li, Qiming; Figiel, Jeffrey J.; Wang, George T.

    2015-07-14

    In this study, ammonia-based molecular beam epitaxy (NH3-MBE) was used to grow catalyst-assisted GaN nanowires on (11¯02) r-plane sapphire substrates. Dislocation free [112¯0] oriented nanowires are formed with pentagon shape cross-section, instead of the usual triangular shape facet configuration. Specifically, the cross-section is the result of the additional two nonpolar {101¯0} side facets, which appear due to a decrease in relative growth rate of the {101¯0} facets to the {101¯1} and {101¯1} facets under the growth regime in NH3-MBE. Compared to GaN nanowires grown by Ni-catalyzed metal–organic chemical vapor deposition, the NH3-MBE grown GaN nanowires show more than an order of magnitude increase in band-edge to yellow luminescence intensity ratio, as measured by cathodoluminescence, indicating improved microstructural and optical properties.

  13. Electronic and optical device applications of hollow cathode plasma assisted atomic layer deposition based GaN thin films

    SciTech Connect (OSTI)

    Bolat, Sami Tekcan, Burak; Ozgit-Akgun, Cagla; Biyikli, Necmi; Okyay, Ali Kemal

    2015-01-15

    Electronic and optoelectronic devices, namely, thin film transistors (TFTs) and metalsemiconductormetal (MSM) photodetectors, based on GaN films grown by hollow cathode plasma-assisted atomic layer deposition (PA-ALD) are demonstrated. Resistivity of GaN thin films and metal-GaN contact resistance are investigated as a function of annealing temperature. Effect of the plasma gas and postmetallization annealing on the performances of the TFTs as well as the effect of the annealing on the performance of MSM photodetectors are studied. Dark current to voltage and responsivity behavior of MSM devices are investigated as well. TFTs with the N{sub 2}/H{sub 2} PA-ALD based GaN channels are observed to have improved stability and transfer characteristics with respect to NH{sub 3} PA-ALD based transistors. Dark current of the MSM photodetectors is suppressed strongly after high-temperature annealing in N{sub 2}:H{sub 2} ambient.

  14. CRAD, Facility Safety- Nuclear Facility Safety Basis

    Office of Energy Efficiency and Renewable Energy (EERE)

    A section of Appendix C to DOE G 226.1-2 "Federal Line Management Oversight of Department of Energy Nuclear Facilities." Consists of Criteria Review and Approach Documents (CRADs) that can be used for assessment of a contractor's Nuclear Facility Safety Basis.

  15. CRAD, Facility Safety- Nuclear Facility Design

    Office of Energy Efficiency and Renewable Energy (EERE)

    A section of Appendix C to DOE G 226.1-2 "Federal Line Management Oversight of Department of Energy Nuclear Facilities." Consists of Criteria Review and Approach Documents (CRADs) that can be used for assessment of a contractor's Nuclear Facility Design.

  16. ORPS Facility Registration Form

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    ORPS FACILITY REGISTRATION FORM Submit completed form to: U.S. Department of Energy AU User Support EMAIL: ORPSsupport@hq.doe.gov PHONE: 800-473-4375 FAX: 301-903-9823 Note:  Only one facility per form  Type or print all entries 1. TYPE OF CHANGE  Add a Facility (Complete Section 1.A, then go to Section 2)  Change a Facility (Complete Section 1.B, then go to Section)  Delete a Facility (Complete Section 1.C, then go to Section 2) A. Add a New Facility Use this section if you are

  17. Canyon Facilities - Hanford Site

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    About Us Projects & Facilities Canyon Facilities About Us About Hanford Cleanup Hanford History Hanford Site Wide Programs Contact Us 100 Area 118-K-1 Burial Ground 200 Area 222-S Laboratory 242-A Evaporator 300 Area 324 Building 325 Building 400 Area/Fast Flux Test Facility 618-10 and 618-11 Burial Grounds 700 Area B Plant B Reactor C Reactor Canister Storage Building and Interim Storage Area Canyon Facilities Cold Test Facility D and DR Reactors Effluent Treatment Facility Environmental

  18. ARM - Facility News Article

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    March 22, 2007 Facility News GEWEX News Features Dust Data from ARM Mobile Facility ... The AMF recorded a major dust storm that passed through the area in March, and combined ...

  19. Technology Transitions Facilities Database

    Energy.gov [DOE]

    The types of R&D facilities at the DOE Laboratories available to the public typically fall into three broad classes depending on the mode of access: Designated User Facilities, Shared R&D...

  20. Jupiter Laser Facility

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    Jupiter Laser Facility The commissioning of the Titan Petawatt-Class laser to LLNL's Jupiter Laser Facility (JLF) has provided a unique platform for the use of petawatt (PW)-class ...

  1. ARM Climate Research Facility

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    9 ARM Climate Research Facility Quarterly Value-Added Product Report C Sivaraman April ... DOESC-ARM-14-009 ARM Climate Research Facility Quarterly Value-Added Product Report First ...

  2. ARM Climate Research Facility

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    2 ARM Climate Research Facility Quarterly Value-Added Product Report C Sivaraman January ... DOESC-ARM-14-002 ARM Climate Research Facility Quarterly Value-Added Product Report First ...

  3. ARM Climate Research Facility

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    3 ARM Climate Research Facility Quarterly Value-Added Product Report Chitra Sivaraman ... DOESC-ARM-11-023 ARM Climate Research Facility Quarterly Value-Added Product Report ...

  4. ARM Climate Research Facility

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    3 ARM Climate Research Facility Quarterly Ingest Status Report A Koontz C Sivaraman July ... DOESC-ARM-14-023 ARM Climate Research Facility Quarterly Ingest Report Third Quarter: ...

  5. ARM Climate Research Facility

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    0 ARM Climate Research Facility Quarterly Value-Added Product Report C Sivaraman July 2014 ... DOESC-ARM-14-020 ARM Climate Research Facility Quarterly Value-Added Product Report Third ...

  6. ARM Climate Research Facility

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    2 ARM Climate Research Facility Quarterly Value-Added Product Report C Sivaraman February ... DOESC-ARM-12-002 ARM Climate Research Facility Quarterly Value-Added Product Report First ...

  7. ARM Climate Research Facility

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    1 ARM Climate Research Facility Quarterly Value-Added Product Report Chitra Sivaraman ... DOESC-ARM-11-021 ARM Climate Research Facility Quarterly Value-Added Product Report Third ...

  8. ARM - Facility News Article

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    April 30, 2008 Facility News ARM Outreach Materials Chosen for Earth Day Display in Washington DC Bookmark and Share Posters for the ARM Mobile Facility and ARM Education and...

  9. ARM - Facility News Article

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    Data Available from ARM Mobile Facility Deployment in China Bookmark and Share The Study of Aerosol Indirect Effects in China was anchored by the ARM Mobile Facility in Shouxian ...

  10. ARM - Facility News Article

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    facility use by total visitor days-broken down by institution type, gender, race, citizenship, visitor role, visit purpose, and facility-for actual visitors and for active user...

  11. ARM - Facility News Article

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    Farewell to Dan Nelson, SGP Facilities Manager Bookmark and Share Dan Nelson Dan Nelson Dan Nelson, long-time facilities manager at the ARM Southern Great Plains site, is heading...

  12. Facilities | Jefferson Lab

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    JLab Buildings Facilities Management & Logistics is responsible for performing or specifying performance of all Jefferson Lab facility maintenance. A D D I T I O N A L L I N K S:...

  13. ARM - Facility News Article

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    July 18, 2016 [Facility News] Next Round of Deadlines for Small Campaigns Coming Up Bookmark and Share The next deadline to propose for smaller field campaigns will be August 22. Small campaigns do not require a full deployment of ARM Facility equipment, like an ARM mobile or aerial facility. They require just an instrument or two, or are in conjunction with a larger facility operation. Costing less than $25,000, these campaigns give researchers access to ARM's equipment to perform focused,

  14. WIPP Nuclear Facilities Transparency

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    Nuclear Facilities Transparency Resources Transparency Home Purpose of Transparency Stakeholders Transparency Implementation Transparency Risks Transparency Technologies Other ...

  15. ARM - Facility News Article

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    in atmospheric and terrestrial ecosystem research participated in the workshop, ... Chemical and Biological Measurements Ecosystem Aerial Facility Measurements BER staff ...

  16. Argonne Leadership Computing Facility

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    ARGONNE LEADERSHIP COMPUTING FACILITY The 10-petaflops Mira supercomputer The Argonne Leadership Computing Facility (ALCF), a U.S. Department of Energy (DOE) Office of Science User Facility, provides its user community with computing time and staff support to pursue significant breakthroughs in science and engineering. The ALCF is one of two DOE leadership computing facilities in the nation dedicated to open science. www.alcf.anl.gov ENABLING SCIENCE With hundreds of thousands of processors

  17. Expertise & Facilities

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    Expertise & Facilities Expertise & Facilities Our full spectrum of end-to-end integrated capabilities in explosives make Los Alamos the ideal place to develop, characterize, and test all types of explosives and explosives threat scenarios. v Award-winning scientists, state-of-the-art facilities LACED is built upon Los Alamos' unparalleled explosives detection capabilities derived from the expertise of award-winning scientists and state-of-the-art facilities. LACED is made up of 57

  18. NEAC Facilities Subcommittee Report

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    Facilities Subcommittee Report Presentation to the NEAC Committee 12/11/2015 John I. Sackett Facilities Subcommittee Members * John Ahearne * Dana Christensen * Tom Cochran * Mike Corradini * Dave Hill * Hussein Khalil * Andy Klein * Paul Murray * John Sackett, chair Subcommittee Objectives * The objective of our deliberations has been to help DOE-NE develop a means to identify, prioritize and make available those facilities important to Nuclear Energy Research and Development. - All facilities

  19. WIPP - Public Reading Facilities

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    Public Reading Facilities/Electronic Reading Facilities The Freedom of Information Act (FOIA) and Electronic FOIA (E-FOIA) require that various specific types of records, as well as various other records, be maintained in public reading facilities. Before you submit a FOIA request, we recommend you contact or visit the appropriate public reading facility to determine if the records you are seeking have already been released. The U.S. Department of Energy (DOE), as well as other related DOE

  20. Recycling process for recovery of gallium from GaN an e-waste of LED industry through ball milling, annealing and leaching

    SciTech Connect (OSTI)

    Swain, Basudev Mishra, Chinmayee; Kang, Leeseung; Park, Kyung-Soo Lee, Chan Gi; Hong, Hyun Seon

    2015-04-15

    Waste dust generated during manufacturing of LED contains significant amounts of gallium and indium, needs suitable treatment and can be an important resource for recovery. The LED industry waste dust contains primarily gallium as GaN. Leaching followed by purification technology is the green and clean technology. To develop treatment and recycling technology of these GaN bearing e-waste, leaching is the primary stage. In our current investigation possible process for treatment and quantitative leaching of gallium and indium from the GaN bearing e-waste or waste of LED industry dust has been developed. To recycle the waste and quantitative leaching of gallium, two different process flow sheets have been proposed. In one, process first the GaN of the waste the LED industry dust was leached at the optimum condition. Subsequently, the leach residue was mixed with Na{sub 2}CO{sub 3}, ball milled followed by annealing, again leached to recover gallium. In the second process, the waste LED industry dust was mixed with Na{sub 2}CO{sub 3}, after ball milling and annealing, followed acidic leaching. Without pretreatment, the gallium leaching was only 4.91 w/w % using 4 M HCl, 100 °C and pulp density of 20 g/L. After mechano-chemical processing, both these processes achieved 73.68 w/w % of gallium leaching at their optimum condition. The developed process can treat and recycle any e-waste containing GaN through ball milling, annealing and leaching. - Highlights: • Simplest process for treatment of GaN an LED industry waste developed. • The process developed recovers gallium from waste LED waste dust. • Thermal analysis and phase properties of GaN to Ga{sub 2}O{sub 3} and GaN to NaGaO{sub 2} revealed. • Solid-state chemistry involved in this process reported. • Quantitative leaching of the GaN was achieved.

  1. Characterization of GaN nanowires grown on PSi, PZnO and PGaN on Si (111) substrates by thermal evaporation

    SciTech Connect (OSTI)

    Shekari, Leila; Hassan, Haslan Abu; Thahab, Sabah M.; Hassan, Zainuriah

    2012-06-20

    In this research, we used an easy and inexpensive method to synthesize highly crystalline GaN nanowires (NWs); on different substrates such as porous silicon (PSi), porous zinc oxide (PZnO) and porous gallium nitride (PGaN) on Si (111) wafer by thermal evaporation using commercial GaN powder without any catalyst. Micro structural studies by scanning electron microscopy and transmission electron microscope measurements reveal the role of different substrates in the morphology, nucleation and alignment of the GaN nanowires. The degree of alignment of the synthesized nanowires does not depend on the lattice mismatch between wires and their substrates. Further structural and optical characterizations were performed using high resolution X-ray diffraction and energy-dispersive X-ray spectroscopy. Results indicate that the nanowires are of single-crystal hexagonal GaN. The quality and density of grown GaN nanowires for different substrates are highly dependent on the lattice mismatch between the nanowires and their substrates and also on the size of the porosity of the substrates. Nanowires grown on PGaN have the best quality and highest density as compared to nanowires on other substrates. By using three kinds of porous substrates, we are able to study the increase in the alignment and density of the nanowires.

  2. Carrier and photon dynamics in a topological insulator Bi{sub 2}Te{sub 3}/GaN type II staggered heterostructure

    SciTech Connect (OSTI)

    Chaturvedi, P.; Chouksey, S.; Banerjee, D.; Ganguly, S.; Saha, D.

    2015-11-09

    We have demonstrated a type-II band-aligned heterostructure between pulsed laser deposited topological insulator bismuth telluride and metal organic-chemical-vapour deposited GaN on a sapphire substrate. The heterostructure shows a large valence band-offset of 3.27 eV as determined from x-ray photoelectron spectroscopy, which is close to the bandgap of GaN (3.4 eV). Further investigation using x-ray diffraction, Raman spectroscopy, and energy-dispersive x-ray spectrum reveals the stoichiometric and material properties of bismuth telluride on GaN. Steady state photon emission from GaN is found to be modulated by the charge transfer process due to diffusion across the junction. The time constant involved with the charge transfer process is found to be 0.6 ns by transient absorption spectroscopy. The heterostructure can be used for designing devices with different functionalities and improving the performance of the existing devices on GaN.

  3. Listing of Defense Nuclear Facilities

    Energy Savers

    Listing of Defense Nuclear Facilities The facilities listed below are considered DOE defense nuclear facilities for purposes of Section 3161. Kansas City Plant Pinellas Plant Mound ...

  4. ARM - Facility News Archive

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    Archive Media Contact Hanna Goss hanna-dot-goss-at-pnnl-dot-gov @armnewsteam Field Notes Blog Topics Field Notes118 AGU 3 AMIE 10 ARM Aerial Facility 2 ARM Mobile Facility 1 7 ARM Mobile Facility 2 47 ARM Mobile Facility 3 1 BAECC 1 BBOP 4 CARES 1 Data Quality Office 2 ENA 2 GOAMAZON 7 HI-SCALE 5 LASIC 3 MAGIC 15 MC3E 17 PECAN 3 SGP 8 STORMVEX 29 TCAP 3 Search News Search Blog News Center All Categories What's this? Social Media Guidance News Center All Categories Features and Releases Facility

  5. ARM - Facility News

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    News Media Contact Hanna Goss hanna-dot-goss-at-pnnl-dot-gov @armnewsteam Field Notes Blog Topics Field Notes118 AGU 3 AMIE 10 ARM Aerial Facility 2 ARM Mobile Facility 1 7 ARM Mobile Facility 2 47 ARM Mobile Facility 3 1 BAECC 1 BBOP 4 CARES 1 Data Quality Office 2 ENA 2 GOAMAZON 7 HI-SCALE 5 LASIC 3 MAGIC 15 MC3E 17 PECAN 3 SGP 8 STORMVEX 29 TCAP 3 Search News Search Blog News Center All Categories What's this? Social Media Guidance News Center All Categories Features and Releases Facility

  6. Wheelabrator Westchester Biomass Facility | Open Energy Information

    Open Energy Information (Open El) [EERE & EIA]

    Westchester Biomass Facility Jump to: navigation, search Name Wheelabrator Westchester Biomass Facility Facility Wheelabrator Westchester Sector Biomass Facility Type Municipal...

  7. Hydrodynamic Testing Facilities Database | Open Energy Information

    Open Energy Information (Open El) [EERE & EIA]

    Hydrodynamic Testing Facilities Database (Redirected from Hydrodynamic Testing Facilities) Jump to: navigation, search Facility Operators By viewing Hydrodynamic Testing Facilities...

  8. Radiation-induced defects in GaN bulk grown by halide vapor phase epitaxy

    SciTech Connect (OSTI)

    Duc, Tran Thien; Pozina, Galia; Son, Nguyen Tien; Janzén, Erik; Hemmingsson, Carl; Ohshima, Takeshi

    2014-09-08

    Defects induced by electron irradiation in thick free-standing GaN layers grown by halide vapor phase epitaxy were studied by deep level transient spectroscopy. In as-grown materials, six electron traps, labeled D2 (E{sub C}–0.24 eV), D3 (E{sub C}–0.60 eV), D4 (E{sub C}–0.69 eV), D5 (E{sub C}–0.96 eV), D7 (E{sub C}–1.19 eV), and D8, were observed. After 2 MeV electron irradiation at a fluence of 1 × 10{sup 14 }cm{sup −2}, three deep electron traps, labeled D1 (E{sub C}–0.12 eV), D5I (E{sub C}–0.89 eV), and D6 (E{sub C}–1.14 eV), were detected. The trap D1 has previously been reported and considered as being related to the nitrogen vacancy. From the annealing behavior and a high introduction rate, the D5I and D6 centers are suggested to be related to primary intrinsic defects.

  9. Electrochemical removal of hydrogen atoms in Mg-doped GaN epitaxial layers

    SciTech Connect (OSTI)

    Lee, June Key E-mail: hskim7@jbnu.ac.kr; Hyeon, Gil Yong; Tawfik, Wael Z.; Choi, Hee Seok; Ryu, Sang-Wan; Jeong, Tak; Jung, Eunjin; Kim, Hyunsoo E-mail: hskim7@jbnu.ac.kr

    2015-05-14

    Hydrogen atoms inside of an Mg-doped GaN epitaxial layer were effectively removed by the electrochemical potentiostatic activation (EPA) method. The role of hydrogen was investigated in terms of the device performance of light-emitting diodes (LEDs). The effect of the main process parameters for EPA such as solution type, voltage, and time was studied and optimized for application to LED fabrication. In optimized conditions, the light output of 385-nm LEDs was improved by about 26% at 30 mA, which was caused by the reduction of the hydrogen concentration by ∼35%. Further removal of hydrogen seems to be involved in the breaking of Ga-H bonds that passivate the nitrogen vacancies. An EPA process with high voltage breaks not only Mg-H bonds that generate hole carriers but also Ga-H bonds that generate electron carriers, thus causing compensation that impedes the practical increase of hole concentration, regardless of the drastic removal of hydrogen atoms. A decrease in hydrogen concentration affects the current-voltage characteristics, reducing the reverse current by about one order and altering the forward current behavior in the low voltage region.

  10. Yellow luminescence and related deep states in undoped GaN

    SciTech Connect (OSTI)

    Calleja, E.; Sanchez, F.J.; Basak, D.; Sanchez-Garcia, M.A.; Munoz, E.; Izpura, I.; Calle, F.; Tijero, J.M.; Sanchez-Rojas, J.L.; Beaumont, B.; Lorenzini, P.; Gibart, P.

    1997-02-01

    Photocapacitance spectra in undoped, metal-organic vapor-phase-epitaxy-grown GaN layers, in a range of photon energies from 0.6 to 3.5 eV, reveal two main persistent features: a broad increase of the capacitance from 2.0 to 2.5 eV, and a steep {ital decrease} at 1 eV, only observed after a previous light exposure to photon energies above 2.5 eV. A deep trap (E{sub v}+1 eV) that captures photoelectrons from the valence band, after being emptied with photons above 2.5 eV, is proposed as the origin of these features. Optical-current deep-level transient spectroscopy results also show the presence of a trap at 0.94 eV {ital above} the valence band, {ital only} detected after light excitation with photon energies above 2.5 eV. A correlation is found between the {open_quotes}yellow band{close_quotes} luminescence intensity at 2.2 eV and the amplitude of the photocapacitance decrease at 1 eV, pointing to a deep trap at 1 eV {ital above} the valence band as the recombination path for the yellow band. The detection of the yellow band with below-the-gap photoluminescence excitation supports the proposed model. {copyright} {ital 1997} {ital The American Physical Society}

  11. TEM studies of laterally overgrown GaN layers grown on non-polarsubstrates

    SciTech Connect (OSTI)

    Liliental-Weber, Z.; Ni, X.; Morkoc, H.

    2006-01-05

    Transmission electron microscopy (TEM) was used to study pendeo-epitaxial GaN layers grown on polar and non-polar 4H SiC substrates. The structural quality of the overgrown layers was evaluated using a number of TEM methods. Growth of pendeo-epitaxial layers on polar substrates leads to better structural quality of the overgrown areas, however edge-on dislocations are found at the meeting fronts of two wings. Some misorientation between the 'seed' area and wing area was detected by Convergent Beam Electron Diffraction. Growth of pendeo-epitaxial layers on non-polar substrates is more difficult. Two wings on the opposite site of the seed area grow in two different polar directions with different growth rates. Most dislocations in a wing grown with Ga polarity are 10 times wider than wings grown with N-polarity making coalescence of these layers difficult. Most dislocations in a wing grown with Ga polarity bend in a direction parallel to the substrate, but some of them also propagate to the sample surface. Stacking faults formed on the c-plane and prismatic plane occasionally were found. Some misorientation between the wings and seed was detected using Large Angle Convergent Beam Diffraction.

  12. Enhanced stability of Eu in GaN nanoparticles: Effects of Si co-doping

    SciTech Connect (OSTI)

    Kaur, Prabhsharan; Sekhon, S. S.; Zavada, J. M.; Kumar, Vijay

    2015-06-14

    Ab initio calculations on Eu doped (GaN){sub n} (n = 12, 13, and 32) nanoparticles show that Eu doping in nanoparticles is favorable compared with bulk GaN as a large fraction of atoms lie on the surface where strain can be released compared with bulk where often Eu doping is associated with a N vacancy. Co-doping of Si further facilitates Eu doping as strain from an oversized Eu atom and an undersized Si atom is compensated. These results along with low symmetry sites in nanoparticles make them attractive for developing strongly luminescent nanomaterials. The atomic and electronic structures are discussed using generalized gradient approximation (GGA) for the exchange-correlation energy as well as GGA + U formalism. In all cases of Eu (Eu + Si) doping, the magnetic moments are localized on the Eu site with a large value of 6μ{sub B} (7μ{sub B}). Our results suggest that co-doping can be a very useful way to achieve rare-earth doping in different hosts for optoelectronic materials.

  13. Working with SRNL - Our Facilities- Rapid Fabrication Facility

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    Rapid Fabrication Facility Working with SRNL Our Facilities - Rapid Fabrication Facility At SRNL's Rapid Fabrication Facility, low-cost prototypes are produced, as well as parts and complete working models

  14. Department of Energy Facilities | Department of Energy

    Energy Savers

    Department of Energy Facilities Department of Energy Facilities Department of Energy Facilities View All Maps Addthis...

  15. Department of Energy Facilities | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    Department of Energy Facilities Department of Energy Facilities Department of Energy Facilities

  16. High-power blue laser diodes with indium tin oxide cladding on semipolar (202{sup }1{sup }) GaN substrates

    SciTech Connect (OSTI)

    Pourhashemi, A. Farrell, R. M.; Cohen, D. A.; Speck, J. S.; DenBaars, S. P.; Nakamura, S.

    2015-03-16

    We demonstrate a high power blue laser diode (LD) using indium tin oxide as a cladding layer on semipolar oriented GaN. These devices show peak output powers and external quantum efficiencies comparable to state-of-the-art commercial c-plane devices. Ridge waveguide LDs were fabricated on (202{sup }1{sup }) oriented GaN substrates using InGaN waveguiding layers and GaN cladding layers. At a lasing wavelength of 451?nm at room temperature, an output power of 2.52?W and an external quantum efficiency of 39% were measured from a single facet under a pulsed injection current of 2.34?A. The measured differential quantum efficiency was 50%.

  17. Performance enhancement of GaN metalsemiconductormetal ultraviolet photodetectors by insertion of ultrathin interfacial HfO{sub 2} layer

    SciTech Connect (OSTI)

    Kumar, Manoj E-mail: aokyay@ee.bilkent.edu.tr; Tekcan, Burak; Okyay, Ali Kemal E-mail: aokyay@ee.bilkent.edu.tr

    2015-03-15

    The authors demonstrate improved device performance of GaN metalsemiconductormetal ultraviolet (UV) photodetectors (PDs) by ultrathin HfO{sub 2} (UT-HfO{sub 2}) layer on GaN. The UT-HfO{sub 2} interfacial layer is grown by atomic layer deposition. The dark current of the PDs with UT-HfO{sub 2} is significantly reduced by more than two orders of magnitude compared to those without HfO{sub 2} insertion. The photoresponsivity at 360?nm is as high as 1.42 A/W biased at 5 V. An excellent improvement in the performance of the devices is ascribed to allowed electron injection through UT-HfO{sub 2} on GaN interface under UV illumination, resulting in the photocurrent gain with fast response time.

  18. Integrated Disposal Facility - Hanford Site

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    Area 324 Building 325 Building 400 AreaFast Flux Test Facility 618-10 and 618-11 ... Facilities Cold Test Facility D and DR Reactors Effluent Treatment Facility ...

  19. Highly mismatched crystalline and amorphous GaN(1-x)As(x) alloys in the whole composition range

    SciTech Connect (OSTI)

    Yu, K. M.; Novikov, S. V.; Broesler, R.; Demchenko, I. N.; Denlinger, J. D.; Liliental-Weber, Z.; Luckert, F.; Martin, R. W.; Walukiewicz, W.; Foxon, C. T.

    2009-08-29

    Alloying is a commonly accepted method to tailor properties of semiconductor materials for specific applications. Only a limited number of semiconductor alloys can be easily synthesized in the full composition range. Such alloys are, in general, formed of component elements that are well matched in terms of ionicity, atom size, and electronegativity. In contrast there is a broad class of potential semiconductor alloys formed of component materials with distinctly different properties. In most instances these mismatched alloys are immiscible under standard growth conditions. Here we report on the properties of GaN1-xAsx, a highly mismatched, immiscible alloy system that was successfully synthesized in the whole composition range using a nonequilibrium low temperature molecular beam epitaxy technique. The alloys are amorphous in the composition range of 0.17GaN to ~;;0.8 eV at x~;;0.85. The reduction in the band gap can be attributed primarily to the downward movement of the conduction band for alloys with x>0.2, and to the upward movement of the valence band for alloys with x<0.2. The unique features of the band structure offer an opportunity of using GaN1-xAsx alloys for various types of solar power conversion devices.

  20. Better Catalysts through Microscopy: Nanometer Scale M1/M2 Intergrown Heterostructure in Mo-V-M Complex Oxides

    DOE PAGES-Beta [OSTI]

    He, Qian; Woo, Jungwon; Belianinov, Alex; Guliants, Vadim V.; Borisevich, Albina Y

    2015-01-01

    In recent decades, catalysis research has transformed from the predominantly empirical field to one where it is possible to control the catalytic properties via characterization and modification of the atomic-scale active centers. Many phenomena in catalysis, such as synergistic effect, however, transcend the atomic scale and also require the knowledge and control of the mesoscale structure of the specimen to harness. In this paper, we use our discovery of atomic-scale epitaxial interfaces in molybdenum vanadium based complex oxide catalysts systems (i.e., MoVMO, M = Ta, Te, Sb, Nb, etc.) to achieve control of the mesoscale structure of this complex mixturemore » of very different active phases. We can now achieve true epitaxial intergrowth between the catalytically critical M1 and M2 phases in the system that are hypothesized to have synergistic interactions, and demonstrate that the resulting catalyst has improved selectivity in the initial studies. Finally, we highlight the crucial role atomic scale characterization and mesoscale structure control play in uncovering the complex underpinnings of the synergistic effect in catalysis.« less

  1. Better Catalysts through Microscopy: Nanometer Scale M1/M2 Intergrown Heterostructure in Mo-V-M Complex Oxides

    SciTech Connect (OSTI)

    He, Qian [ORNL; Woo, Jungwon [University of Cincinnati; Belianinov, Alex [ORNL; Guliants, Vadim V. [University of Cincinnati; Borisevich, Albina Y [ORNL

    2015-01-01

    In recent decades, catalysis research has transformed from the predominantly empirical field to one where it is possible to control the catalytic properties via characterization and modification of the atomic-scale active centers. Many phenomena in catalysis, such as synergistic effect, however, transcend the atomic scale and also require the knowledge and control of the mesoscale structure of the specimen to harness. In this paper, we use our discovery of atomic-scale epitaxial interfaces in molybdenum vanadium based complex oxide catalysts systems (i.e., MoVMO, M = Ta, Te, Sb, Nb, etc.) to achieve control of the mesoscale structure of this complex mixture of very different active phases. We can now achieve true epitaxial intergrowth between the catalytically critical M1 and M2 phases in the system that are hypothesized to have synergistic interactions, and demonstrate that the resulting catalyst has improved selectivity in the initial studies. Finally, we highlight the crucial role atomic scale characterization and mesoscale structure control play in uncovering the complex underpinnings of the synergistic effect in catalysis.

  2. Kammerer Solar Power Facility | Open Energy Information

    Open Energy Information (Open El) [EERE & EIA]

    Power Facility Facility Kammerer Solar Power Facility Sector Solar Facility Type Photovoltaics Facility Status In Service Developer Recurrent Energy Energy Purchaser Sacramento...

  3. Spearville Wind Energy Facility | Open Energy Information

    Open Energy Information (Open El) [EERE & EIA]

    Wind Energy Facility Jump to: navigation, search Name Spearville Wind Energy Facility Facility Spearville Wind Energy Facility Sector Wind energy Facility Type Commercial Scale...

  4. Baseline Wind Energy Facility | Open Energy Information

    Open Energy Information (Open El) [EERE & EIA]

    Wind Energy Facility Jump to: navigation, search Name Baseline Wind Energy Facility Facility Baseline Wind Energy Facility Sector Wind energy Facility Type Commercial Scale Wind...

  5. Ainsworth Wind Energy Facility | Open Energy Information

    Open Energy Information (Open El) [EERE & EIA]

    Ainsworth Wind Energy Facility Jump to: navigation, search Name Ainsworth Wind Energy Facility Facility Ainsworth Wind Energy Facility Sector Wind energy Facility Type Commercial...

  6. Searsburg Wind Energy Facility | Open Energy Information

    Open Energy Information (Open El) [EERE & EIA]

    Searsburg Wind Energy Facility Jump to: navigation, search Name Searsburg Wind Energy Facility Facility Searsburg Wind Energy Facility Sector Wind energy Facility Type Commercial...

  7. Argonne Wakefield Accelerator Facility | Argonne National Laboratory

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    Facilities 4 Tesla Magnet Facility Argonne Wakefield Accelerator Facility Argonne Wakefield Accelerator Facility Argonne Wakefield Accelerator Facility In order to achieve the high ...

  8. ARM - Facility News Article

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    A-OK in Oklahoma: SGP Reconfiguration is Right on Track Bookmark and Share ARM staff meet milestones in completing instrument upgrades A new extended facility site (39) was installed, including 3-channel microwave radiometer. A new extended facility site (39) was installed, including 3-channel microwave radiometer. As part of the next-generation ARM Facility initiative set forth in the 2014 Decadal Vision, the Southern Great Plains (SGP) site in Oklahoma has been undergoing a reconfiguration to

  9. ARM - Facility News Article

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    8, 2012 [Data Announcements, Facility News] New Data from Greenland for Arctic Climate Research Bookmark and Share Instruments for ICECAPS operate on top and inside of the Mobile Science Facility at Summit Station in Greenland. Instruments for ICECAPS operate on top and inside of the Mobile Science Facility at Summit Station in Greenland. In 2010, researchers installed a powerful suite of climate and weather instruments at Greenland's frozen research outpost, Summit Station, for a long-term

  10. ARM - Facility News Article

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    July 10, 2007 [Facility News] Jim Mather Selected as New ARM Technical Director Bookmark and Share Congratulations to Dr. Jim Mather, who will take the position of Technical Director of the ARM Climate Research Facility effective August 1, 2007. The Technical Director is responsible and accountable for the successful overall management of the user facility and works with the other ARM managers to this end. Jim's leadership will be critical for the successful development and evolution of the

  11. ARM - Facility News Article

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    9, 2014 [Facility News] Workshops Begin for ARM Megasites Bookmark and Share While the mission of the ARM Climate Research Facility has not changed, it is undergoing a reconfiguration to better support the linking of ARM measurements with process-oriented models. The facility reconfiguration, presented at the recent Atmospheric System Research meeting, will involve three main components: Augmenting measurements at the ARM Southern Great Plains site and the two sites on the North Slope of Alaska,

  12. Manufacturing Demonstration Facility

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    Manufacturing Demonstration Facility Bill Peter Director, Manufacturing Demonstration Facility Oak Ridge National Laboratory Advanced Manufacturing Office Peer Review June 14-15, 2016 This presentation does not contain any proprietary, confidential, or otherwise restricted information. Today, ORNL is a leading science and energy laboratory The Manufacturing Demonstration Facility at Oak Ridge National Laboratory * R&D in materials, systems, and computational applications to develop broad of

  13. ARM - Facility News Article

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    October 17, 2016 [Facility News] Data Developers Meeting Helps Align ARM Staff with Facility Goals Bookmark and Share Sessions indicate the ARM reconfiguration is on track, but there is more work ahead Giving an overview of accomplishments, user feedback, and goals is ARM Technical Director Jim Mather. Giving an overview of accomplishments, user feedback, and goals is ARM Technical Director Jim Mather. During the last week of September, about 55 ARM Climate Research Facility staff members

  14. NREL: Transportation Research - Facilities

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    Facilities NREL conducts vehicles and fuels research in laboratories and test sites on its 327-acre main campus in Golden, Colorado, and at specialized facilities within the region. Industry, government, and university partners benefit from access to NREL equipment and facilities tailored to analyze a broad spectrum of energy-efficient vehicle and fuel technologies and innovations. NREL engineers and researchers work closely with a wide variety of partners to research and develop advanced

  15. Ultraviolet light-emitting diodes grown by plasma-assisted molecular beam epitaxy on semipolar GaN (2021) substrates

    SciTech Connect (OSTI)

    Sawicka, M.; Grzanka, S.; Skierbiszewski, C.; Turski, H.; Muziol, G.; Krysko, M.; Grzanka, E.; Sochacki, T.; Siekacz, M.; Kucharski, R.

    2013-03-18

    Multi-quantum well (MQW) structures and light emitting diodes (LEDs) were grown on semipolar (2021) and polar (0001) GaN substrates by plasma-assisted molecular beam epitaxy. The In incorporation efficiency was found to be significantly lower for the semipolar plane as compared to the polar one. The semipolar MQWs exhibit a smooth surface morphology, abrupt interfaces, and a high photoluminescence intensity. The electroluminescence of semipolar (2021) and polar (0001) LEDs fabricated in the same growth run peaks at 387 and 462 nm, respectively. Semipolar LEDs with additional (Al,Ga)N cladding layers exhibit a higher optical output power but simultaneously a higher turn-on voltage.

  16. X-ray absorption and reflection as probes of the GaN conduction bands: Theory and experiments

    SciTech Connect (OSTI)

    Lambrecht, W.R.L.; Rashkeev, S.N.; Segall, B.

    1997-04-01

    X-ray absorption measurements are a well-known probe of the unoccupied states in a material. The same information can be obtained by using glancing angle X-ray reflectivity. In spite of several existing band structure calculations of the group III nitrides and previous optical studies in UV range, a direct probe of their conduction band densities of states is of interest. The authors performed a joint experimental and theoretical investigation using both of these experimental techniques for wurtzite GaN.

  17. Monsanto MOUND FACILITY

    Office of Legacy Management (LM)

    Monsanto . MOUND FACILITY Operated for the United States Department of Energy March 26, 1981 Dr. William E. Mott, Director Environmental and Safety Engineering Division U. S. ...

  18. ARM - Facility News Article

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    New Backup Software Improves Processing, Reliability at Data Management Facility Bookmark ... In May, significant progress was made on upgrades to the data backup software in the DMF. ...

  19. ARM - Facility News Article

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    about using the ARM in between sessions. Visitors to the booth were interested in learning about the latest ARM Mobile Facility deployment, the ongoing field campaign...

  20. ARM - Facility News Article

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    , 2011 Facility News Snazzy New Spectroradiometers Sport Same Body, Different Mind Bookmark and Share Connor Flynn, a scientist at Pacific Northwest National Laboratory and the...

  1. ARM - Facility News Article

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    From Coastal Clouds to Desert Dust: ARM Mobile Facility Headed to Africa Bookmark and ... international effort to study the effects of Saharan dust and the West African monsoons. ...

  2. ARM - Facility News Article

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    ARM Aerial Facility's Lofty Goal: Collect Crucial Arctic Climate Change Data with Unmanned Aerial Systems Bookmark and Share ARM bolsters aerial data collection capabilities with ...

  3. ARM - Facility News Article

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    9, 2009 Facility News Climate Change Prediction Program Funding Opportunity Announced Bookmark and Share The U.S. Department of Energy's Office of Science is now accepting ...

  4. ARM - Facility News Article

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    5, 2008 Facility News Talk About Climate Change: Radiometer Moves from Arctic to South America Bookmark and Share Dockside in Charleston, South Carolina, the newly installed GVRP ...

  5. ARM Mobile Facilities

    SciTech Connect (OSTI)

    Orr, Brad; Coulter, Rich

    2010-12-13

    This video provides an overview of the ARM Mobile Facilities, two portable climate laboratories that can deploy anywhere in the world for campaigns of at least six months.

  6. Existing Facilities Rebate Program

    Energy.gov [DOE]

    The NYSERDA Existing Facilities program merges the former Peak Load Reduction and Enhanced Commercial and Industrial Performance programs. The new program offers a broad array of different...

  7. ARM - Facility News Article

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    25, 2011 Education, Facility News Remote Schools Welcome Much-Needed Resources Bookmark and Share Students at the Children's Academy Centre in Lorengau gather as Jacklyn Soko,...

  8. ARM - Facility News Article

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    Due to their remote locations, many of these field facilities still rely on dialup Internet connections and are susceptible to frequent power outages. After uncovering a minor but ...

  9. ARM - Facility News Article

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    Instrument States Database Up and Running Bookmark and Share At the three ARM Climate Research Facility locales (Southern Great Plains, Tropical Western Pacific, and North Slope of...

  10. ARM - Facility News Article

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    ARM's two mobile facilities have completed field campaigns in the United States, Africa, Germany, the Azores, India, and the Maldives. They are currently preparing for yearlong...

  11. Wind Manufacturing Facilities

    Energy.gov [DOE]

    America's wind energy industry supports a growing domestic industrial base. Check out this map to find manufacturing facilities in your state. Last updated December 2013.

  12. ARM - Facility News Article

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    October 15, 2004 Facility News Data Quality Application Gives Data Browsers a New View Bookmark and Share Plot Browser, now available through the Data Quality Health and Status...

  13. Carbon Fiber Technology Facility

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    occupancy * Equipment installation complete * Start-up testing and commissioning * 35 million DOE investment under ARRA * 42,000 sf facility with 390-ft. long processing line. ...

  14. ARM - Facility News Article

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    subcomponents. The ARM Climate Research Facility maintains research sites around the globe, each with a suite of instruments that must be maintained and calibrated to ensure the...

  15. ARM - Facility News Article

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    and Share As a national user facility, ARM is accessible to scientists around the globe for interdisciplinary research related to earth systems. In a continuing effort to...

  16. ARM - Facility News Article

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    October 31, 2008 Facility News Breakthrough User Interface Delivers Statistical Views of Data Bookmark and Share With its "drill-down" preview feature, the Statistical Browser is...

  17. ARM - Facility News Article

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    2, 2015 Facility News, Publications LASSO Implementation Strategy Report Available Bookmark and Share "Data cubes" that combine observations, model output, and metrics will be...

  18. ARM - Facility News Article

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    April 30, 2010 Data Announcements, Facility News Tandem Differential Mobility Analyzer (TDMA) Data Available at the ARM Data Archive Bookmark and Share Dry samples are collected...

  19. ARM - Facility News Article

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    Records Set Again; New Process Enhances Reporting of User Facility Statistics Bookmark and Share The 2006 year-end ARM statistics included a spatial distribution of global (shown...

  20. ARM - Facility News Article

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    June 27, 2007 Data Announcements, Facility News Data from the NOAA Climate Reference Network for Barrow, AK, and Stillwater, OK, are Available Through the External Data Center...

  1. ARM - Facility News Article

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    17, 2013 Facility News Data Sharing for Climate Research with India Now Official Bookmark and Share Aerosol instruments operate at the IISc Challakere campus, located about 150...

  2. Programs & User Facilities

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    Fusion Energy Sciences Magnetic Fusion Experiments Plasma Surface Interactions - SciDAC ... Detector Collaboration at RHIC Ultra-Cold Neutron Facility Workforce Development for ...

  3. NERSC Central Login Facility

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    Login Facility Please login below with your NIM username and password to access pages with personalized information and NERSC user-only content. Username: Password: Login Need to...

  4. ARM - Facility News Article

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    ARM Mobile Facility Completes Field Campaign in Germany Bookmark and Share Researchers ... and causing flooding in portions of Germany. (Image source: DW-WORLD.DE) Operations ...

  5. ARM - Facility News Article

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    Microwave Radiometers Put to the Test in Germany Bookmark and Share A 2-channel microwave ... ARM Mobile Facility site in Heselbach, Germany, in 2007. Microwave radiometers (MWRs) ...

  6. ARM - Facility News Article

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    Data from Field Campaign in Black Forest, Germany, are Red Hot Bookmark and Share During COPS, the ARM Mobile Facility operated in Heselbach, Germany, obtaining measurements ...

  7. ARM - Facility News Article

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    Dr. Jian Wang, Brookhaven National Laboratory The ARM Science Board serves as an independent review body for the ARM Facility to maintain excellence and integrity in the review ...

  8. ARM - Facility News Article

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    September 30, 2008 Facility News Education and Outreach Activities in the Tropics Get a Tune-up Bookmark and Share Leonard Jonli (right), Assistant Administrator for Education on...

  9. ARM - Facility News Article

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    User Facilities in Spotlight at Inaugural Office of Science Graduate Fellows Conference Bookmark and Share Office of Science director Dr. William Brinkman delivers his ...

  10. ARM - Facility News Article

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    triangles indicate ECMWF stations. New climate datastreams are now available from Point Reyes National Seashore in California, where the first deployment of the ARM Mobile Facility...

  11. ARM - Facility News Article

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    Facility (AMF) is being packed up and shipped from Richland, Washington, to the Point Reyes National Seashore north of San Francisco, California. There, it will be reassembled in...

  12. ARM - Facility News Article

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    Facility (AMF), an identical CCN instrument was deployed in 2005 during the AMF field campaign at Point Reyes, California, and is currently operating at Niamey, Niger, West Africa...

  13. ARM - Facility News Article

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    of ARM Mobile Facility to Occur on California Coast Bookmark and Share Image - Point Reyes Beach Point Reyes National Seashore, on the California coast north of San Francisco,...

  14. ARM - Facility News Article

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    Mixed-Phase Arctic Cloud Experiment, and the ARM Mobile Facility's deployments at Point Reyes National Seashore and Niamey, Niger, West Africa. ARM researchers, including ARM's...

  15. ARM - Facility News Article

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    October 16, 2007 Facility News ARM Education and Outreach Program Awarded Funding by National Science Foundation Bookmark and Share Andrea Maestas, ARM Education and Outreach...

  16. Light-Source Facilities

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    ... Facilities, Denmark ISI-800 - Institute of Metal Physics, Ukraine Kharkov Institute of Physics and Technology, Ukraine KSRS - Kurchatov Synchrotron Radiation Source, Russian ...

  17. ARM Mobile Facilities

    ScienceCinema (OSTI)

    Orr, Brad; Coulter, Rich

    2014-09-15

    This video provides an overview of the ARM Mobile Facilities, two portable climate laboratories that can deploy anywhere in the world for campaigns of at least six months.

  18. ARM - Facility News Article

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    October 13, 2014 Education, Facility News ARM Educational Outreach Celebrates Earth Science Week 2014 Bookmark and Share This week, Professor Polar Bear and the Climate Kids are...

  19. ARM - Facility News Article

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    0, 2014 Education, Facility News ARM's Educational Outreach Recognized Bookmark and Share Resources selected by the Climate Literacy and Energy Awareness Network (CLEAN) must...

  20. ARM - Facility News Article

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    14, 2012 Education, Facility News ARM Education Receives Seal of Approval Bookmark and Share Resources selected by the Climate Literacy and Energy Awareness Network (CLEAN) must...

  1. ARM - Facility News Article

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    Early Career Research Program Bookmark and Share Pierre Gentine, Columbia University in New York Pierre Gentine, Columbia University in New York Two ARM Facility users and...

  2. ARM - Facility News Article

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    in a first person view, using curiosity as their guide. Vivid Learning Systems' Nick Bauer takes stills on top of the Radiometric Calibration Facility. Vivid Learning Systems'...

  3. ARM - Facility News Article

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    Research Facility's North Slope of Alaska (NSA) locale was completed the weekend of April ... observations during arctic winters at the NSA and other high latitude research sites. ...

  4. ARM - Facility News Article

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    ARM Climate Research Facility Lends Support to Military Flare Tests Bookmark and Share Prior to the flare tests, SGP personnel informed local landowners and fire departments about ...

  5. ARM - Facility News Article

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    Military Facilities, Restricted Airspace Okayed to Support Arctic Cloud Experiment Bookmark and Share As shown in this aerial photo of Oliktok Point, Alaska, the USAF Long Range ...

  6. Cell Prototyping Facility

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    Cell Prototyping Facility - Sandia Energy Energy Search Icon Sandia Home Locations Contact ... Stationary Power Energy Conversion Efficiency Solar Energy Wind Energy Water Power ...

  7. ARM - Facility News Article

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    15 and 21 will remain intact, along with the Central Facility (C1) near Lamont. Instrumentation at the remaining sites will be consolidated into the new, smaller footprint....

  8. ARM - Facility News Article

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    September 30, 2004 Facility News New Instrumentation on Proteus Aircraft Tested Bookmark and Share This fall, the ARM-Unmanned Aerospace Vehicle Program-specifically, the Proteus ...

  9. ARM - Facility News Article

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    21, 2014 Facility News DOE Early Career Research Awardee to Study Water Cycle Bookmark and Share Mike Pritchard Mike Pritchard Recently announced by the DOE Office of Science...

  10. ARM - Facility News Article

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    January 21, 2008 Facility News ARM Kicks Off 88th American Meteorological Society Annual Meeting at WeatherFest Bookmark and Share Jim Mather, ARM Technical Director,...

  11. ARM - Facility News Article

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    Mapping It Up With Google Bookmark and Share "Thumbtacks" help ARM website users identify where the ARM sites are, including the ARM Mobile Facility deployments. The online ARM...

  12. ARM - Facility News Article

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    December 31, 2008 Facility News Arctic Field Campaign Data and Instrument Performance Reviewed at Workshop Bookmark and Share Both wings of the Canadian National Research...

  13. ARM - Facility News Article

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    More Server Power Improves Performance at the ARM Data Management Facility Bookmark and Share Recently, several new Sun servers joined the production system at the ARM Data ...

  14. ARM - Facility News Article

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    For continuity, the website still features the familiar faces of Professor Polar Bear, Teacher Turtle, and PI Prairie Dog (each representing an ARM Climate Research Facility site), ...

  15. ARM - Facility News Article

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    This report reflects the ARM Facility's contributions to climate model improvements and leadership in providing advanced scientific capabilities for understanding atmospheric...

  16. ARM - Facility News Article

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    October 16, 2007 Facility News The Southern Great Plains Site Welcomes Keith Richardson Bookmark and Share Keith Richardson was hired as a Computer Network Manager at the SGP...

  17. ARM - Facility News Article

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    October 6, 2010 Facility News Call for Abstracts for Aquatic Sciences Meeting in 2011 Bookmark and Share The next biennial American Society for Limnology and Oceanography (ASLO)...

  18. ARM - Facility News Article

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    Begins Marine Cloud Study in the Azores Bookmark and Share Located next to the airport on Graciosa Island, the ARM Mobile Facility's comprehensive and sophisticated...

  19. ARM - Facility News Article

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    15, 2007 Facility News Commercial Infrared Sky Imagers Compared Bookmark and Share Three of the four instruments used in the sky imager intercomparison are visible in this photo...

  20. ARM - Facility News Article

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    ARM Climate Research Facility Communication Products Garner Awards in Competition Bookmark ... Chapter of the Society for Technical Communication, qualifying it for the international ...

  1. ARM - Facility News Article

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    Numerous other instruments are situated nearby. In September 2004, the ARM Climate Research Facility Operations staff installed a new 2-channel Narrow Field of View (NFOV)...

  2. ARM - Facility News Article

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    ER-AERI Bookmark and Share Thanks to quick actions on the part of numerous ARM Climate Research Facility operations staff, an Extended Range Atmospheric Emitted Radiance...

  3. ARM - Facility News Article

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    News New Ceilometer Evaluated at Southern Great Plains Site Bookmark and Share Dan Nelson, SGP facilities manager, inspects the new ceilometer during its evaluation period on...

  4. ARM - Facility News Article

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    Realizing the increasing importance of new methods of science communication, the ARM Facility began efforts last year to expand its multimedia outreach. To begin this process, ...

  5. NSA Atqasuk Facility

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    Inactive NSA Related Links Virtual Tour Facilities and Instruments Barrow Atqasuk Oliktok Point (AMF3) ES&H Guidance Statement Operations Science Field Campaigns Visiting the Site NSA Fact Sheet Images Information for Guest Scientists Contacts NSA Atqasuk Facility-Inactive Location: 70° 28' 19.11" N, 157° 24' 28.99" W Altitude: 20 meters The Atqasuk facility, which was part of the larger ARM Climate Research Facility (ARM) North Slope of Alaska site, was installed the summer of

  6. NSA Barrow Facility

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    Barrow Facility NSA Related Links Virtual Tour Facilities and Instruments Barrow Atqasuk Oliktok Point (AMF3) ES&H Guidance Statement Operations Science Field Campaigns Visiting the Site NSA Fact Sheet Images Information for Guest Scientists Contacts NSA Barrow Facility Location: 71° 19' 23.73" N, 156° 36' 56.70" W Altitude: 8 meters The Barrow facility was dedicated in July 1997 and chosen because the Arctic is particularly sensitive to climate changes. Barrow is located at the

  7. ARM - Facility News Article

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    March 15, 2005 Facility News Japanese Collaborators Take A Long Look at Lightning Bookmark and Share Mounted on tripods, numerous interferometer antennas are secured to the roof...

  8. ARM - Facility News Article

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    Facility Darwin site. Photo courtesy of NASA Goddard Space Flight Center. Science collaborators at the Australian Bureau of Meteorology (BOM) and the Australian Commonwealth...

  9. Facility Survey & Transfer

    Energy.gov [DOE]

    As DOE facilities become excess, many that are radioactively and/or chemically contaminated will become candidate for transfer to DOE-EM for deactivation and decommissioning.

  10. ARM - Facility News Article

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    Show Relationship Between Sea Ice and Precipitation Over Land Bookmark and Share Walter Brower, Barrow site facilities manager for ARM, cleans the sampling surface in...

  11. Facilities | Department of Energy

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    and virtual tools and enable demonstration in targeted technical areas of manufacturing. ... Oak Ridge Manufacturing Demonstration Facility (MDF) Work at the Oak Ridge MDF focuses on ...

  12. ARM - Facility News Article

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    Antarctica is the highest, driest, coldest, and windiest continent. It contains 90% of the ... which manages ARM mobile facilities and Eastern North Atlantic site in the Azores

  13. Lighting Test Facilities

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    Lighting-Test-Facilities Sign In About | Careers | Contact | Investors | bpa.gov Search Policy & Reporting Expand Policy & Reporting EE Sectors Expand EE Sectors Technology &...

  14. ARM - Facility News Article

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    30, 2007 Facility News High-Speed Internet Deflects Information Overload Bookmark and Share Covering approximately 143,000 square kilometers in Oklahoma and Kansas, instruments...

  15. ARM - Facility News Article

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    20, 2008 Facility News ARM Scientists Lead International Radiation Symposium in Brazil Bookmark and Share The ARM Science Team showed up in force at the 2008 International...

  16. Emergency Facilities and Equipment

    Directives, Delegations, and Requirements [Office of Management (MA)]

    1997-08-21

    This volume clarifies requirements of DOE O 151.1 to ensure that emergency facilities and equipment are considered as part of emergency management program and that activities conducted at these emergency facilities are fully integrated. Canceled by DOE G 151.1-4.

  17. Kauai Test Facility

    SciTech Connect (OSTI)

    Hay, R.G.

    1982-01-01

    The Kauai Test Facility (KTF) is a Department of Energy rocket launch facility operated by Sandia National Laboratories. Originally it was constructed in support of the high altitude atmospheric nuclear test phase of operation Dominic in the early 1960's. Later, the facility went through extensive improvement and modernization to become an integral part of the Safeguard C readiness to resume nuclear testing program. Since its inception and build up, in the decade of the sixties and the subsequent upgrades of the seventies, range test activities have shifted from full scale test to emphasis on research and development of materials and components, and to making high altitude scientific measurements. Primarily, the facility is intended to be utilized in support of development programs at the DOE weapons laboratories, however, other organizations may make use of the facility on a non-interface basis. The physical components at KTF and their operation are described.

  18. Facility deactivation and demolition

    SciTech Connect (OSTI)

    Cormier, S.L.; Adamowski, S.J.

    1994-12-31

    Today an improperly closed facility can be a liability to its owner, both financially and environmentally. A facility deactivation program must be planned and implemented to decrease liabilities, minimize operating costs, seek to reuse or sell processes or equipment, and ultimately aid in the sale and/or reuse of the facility and property whether or not the building(s) are demolished. These programs should be characterized within the deactivation plan incorporating the following major categories: Utility Usage; Environmental Decontamination; Ongoing Facility Management; Property Management/Real Estate Issues. This paper will outline the many facets of the facility deactivation and demolition programs implemented across the country for clients in the chemical, automotive, transportation, electronic, pharmaceutical, power, natural gas and petroleum industries. Specific emphasis will be placed on sampling and analysis plans, specification preparation, equipment and technologies utilized, ``how clean is clean`` discussions and regulatory guidelines applicable to these issues.

  19. Diagonalization of transfer matrix of supersymmetry U{sub q}(sl-caret(M+1|N+1)) chain with a boundary

    SciTech Connect (OSTI)

    Kojima, Takeo

    2013-04-15

    We study the supersymmetry U{sub q}(sl-caret(M+1|N+1)) analogue of the supersymmetric t-J model with a boundary. Our approach is based on the algebraic analysis method of solvable lattice models. We diagonalize the commuting transfer matrix by using the bosonizations of the vertex operators associated with the quantum affine supersymmetry U{sub q}(sl-caret(M+1|N+1)).

  20. Strong geometrical effects in submillimeter selective area growth and light extraction of GaN light emitting diodes on sapphire

    DOE PAGES-Beta [OSTI]

    Tanaka, Atsunori; Chen, Renjie; Jungjohann, Katherine L.; Dayeh, Shadi A.

    2015-11-27

    Advanced semiconductor devices often utilize structural and geometrical effects to tailor their characteristics and improve their performance. Our detailed understanding of such geometrical effects in the epitaxial selective area growth of GaN on sapphire substrates is reported here, and we utilize them to enhance light extraction from GaN light emitting diodes. Systematic size and spacing effects were performed side-by-side on a single 2” sapphire substrate to minimize experimental sampling errors for a set of 144 pattern arrays with circular mask opening windows in SiO2. We show that the mask opening diameter leads to as much as 4 times increase inmore » the thickness of the grown layers for 20 μm spacings and that spacing effects can lead to as much as 3 times increase in thickness for a 350 μm dot diameter. We also observed that the facet evolution in comparison with extracted Ga adatom diffusion lengths directly influences the vertical and lateral overgrowth rates and can be controlled with pattern geometry. Lastly, such control over the facet development led to 2.5 times stronger electroluminescence characteristics from well-faceted GaN/InGaN multiple quantum well LEDs compared to non-faceted structures.« less

  1. Strong geometrical effects in submillimeter selective area growth and light extraction of GaN light emitting diodes on sapphire

    SciTech Connect (OSTI)

    Tanaka, Atsunori; Chen, Renjie; Jungjohann, Katherine L.; Dayeh, Shadi A.

    2015-11-27

    Advanced semiconductor devices often utilize structural and geometrical effects to tailor their characteristics and improve their performance. Our detailed understanding of such geometrical effects in the epitaxial selective area growth of GaN on sapphire substrates is reported here, and we utilize them to enhance light extraction from GaN light emitting diodes. Systematic size and spacing effects were performed side-by-side on a single 2” sapphire substrate to minimize experimental sampling errors for a set of 144 pattern arrays with circular mask opening windows in SiO2. We show that the mask opening diameter leads to as much as 4 times increase in the thickness of the grown layers for 20 μm spacings and that spacing effects can lead to as much as 3 times increase in thickness for a 350 μm dot diameter. We also observed that the facet evolution in comparison with extracted Ga adatom diffusion lengths directly influences the vertical and lateral overgrowth rates and can be controlled with pattern geometry. Lastly, such control over the facet development led to 2.5 times stronger electroluminescence characteristics from well-faceted GaN/InGaN multiple quantum well LEDs compared to non-faceted structures.

  2. Ar{sup +}-irradiation-induced damage in hydride vapor-phase epitaxy GaN films

    SciTech Connect (OSTI)

    Nakano, Yoshitaka Ogawa, Daisuke; Nakamura, Keiji; Kawakami, Retsuo; Niibe, Masahito

    2015-07-15

    The authors have investigated the electrical characteristics of hydride vapor-phase epitaxy GaN films exposed to Ar{sup +} irradiation, employing Schottky barrier diodes. The Ar{sup +} irradiation tends to largely increase the effective carrier concentration in the near surface region of GaN up to ∼25 nm, due to the generation of donor-type N vacancy defects, compared to the original value before the irradiation. More interestingly, acceptor-type deep-level defects are found to be formed at ∼2.1, ∼2.9, and ∼3.2 eV below the conduction band in the subsequently deeper region, in which Ga vacancies introduced by the Ar{sup +} irradiation are considered to be in-diffused and immediately combined with hydrogen. These N vacancies and hydrogenated Ga vacancies formed are dominantly responsible for changing the depth profiles of the effective carrier concentration via the carrier generation, the carrier trapping, and/or carrier compensation.

  3. Effect of Fe-doping on nonlinear optical responses and carrier trapping dynamics in GaN single crystals

    SciTech Connect (OSTI)

    Fang, Yu; Yang, Junyi; Yang, Yong; Zhou, Feng; Wu, Xingzhi; Xiao, Zhengguo; Song, Yinglin

    2015-08-03

    We presented a quantitative study on the Fe-doping concentration dependence of optical nonlinearities and ultrafast carrier dynamics in Fe-doped GaN (GaN:Fe) single crystals using picosecond Z-scan and femtosecond pump-probe with phase object techniques under two-photon excitation. In contrast to the two-photon absorption that was found to be independent on the Fe-doping, the nonlinear refraction decreased with the Fe concentration due to the fast carrier trapping effect of Fe{sup 3+}/Fe{sup 2+} deep acceptors, which simultaneously acted as an efficient non-radiative recombination channels for excess carriers. Remarkably, compared to that of Si-doped GaN bulk crystal, the free-carrier refraction effect in GaN:Fe crystals was found to be enhanced considerably since Fe-doping and the effective carrier lifetime (∼10 ps) could be tuned over three orders of magnitude at high Fe-doping level of 1 × 10{sup 19 }cm{sup −3}.

  4. Study of the effects of GaN buffer layer quality on the dc characteristics of AlGaN/GaN high electron mobility transistors

    DOE PAGES-Beta [OSTI]

    Ahn, Shihyun; Zhu, Weidi; Dong, Chen; Le, Lingcong; Hwang, Ya-Hsi; Kim, Byung-Jae; Ren, Fan; Pearton, Stephen J.; Lind, Aaron G.; Jones, Kevin S.; et al

    2015-04-21

    Here we studied the effect of buffer layer quality on dc characteristics of AlGaN/GaN high electron mobility (HEMTs). AlGaN/GaN HEMT structures with 2 and 5 μm GaN buffer layers on sapphire substrates from two different vendors with the same Al concentration of AlGaN were used. The defect densities of HEMT structures with 2 and 5 μm GaN buffer layer were 7 × 109 and 5 × 108 cm₋2, respectively, as measured by transmission electron microscopy. There was little difference in drain saturation current or in transfer characteristics in HEMTs on these two types of buffer. However, there was no dispersionmore » observed on the nonpassivated HEMTs with 5 μm GaN buffer layer for gate-lag pulsed measurement at 100 kHz, which was in sharp contrast to the 71% drain current reduction for the HEMT with 2 μm GaN buffer layer.« less

  5. Study of the effects of GaN buffer layer quality on the dc characteristics of AlGaN/GaN high electron mobility transistors

    SciTech Connect (OSTI)

    Ahn, Shihyun; Zhu, Weidi; Dong, Chen; Le, Lingcong; Hwang, Ya-Hsi; Kim, Byung-Jae; Ren, Fan; Pearton, Stephen J.; Lind, Aaron G.; Jones, Kevin S.; Kravchenko, I. I.; Zhang, Ming-Lan

    2015-04-21

    Here we studied the effect of buffer layer quality on dc characteristics of AlGaN/GaN high electron mobility (HEMTs). AlGaN/GaN HEMT structures with 2 and 5 μm GaN buffer layers on sapphire substrates from two different vendors with the same Al concentration of AlGaN were used. The defect densities of HEMT structures with 2 and 5 μm GaN buffer layer were 7 × 109 and 5 × 108 cm₋2, respectively, as measured by transmission electron microscopy. There was little difference in drain saturation current or in transfer characteristics in HEMTs on these two types of buffer. However, there was no dispersion observed on the nonpassivated HEMTs with 5 μm GaN buffer layer for gate-lag pulsed measurement at 100 kHz, which was in sharp contrast to the 71% drain current reduction for the HEMT with 2 μm GaN buffer layer.

  6. Increased p-type conductivity through use of an indium surfactant in the growth of Mg-doped GaN

    SciTech Connect (OSTI)

    Kyle, Erin C. H. Kaun, Stephen W.; Young, Erin C.; Speck, James S.

    2015-06-01

    We have examined the effect of an indium surfactant on the growth of p-type GaN by ammonia-based molecular beam epitaxy. p-type GaN was grown at temperatures ranging from 700 to 780 °C with and without an indium surfactant. The Mg concentration in all films in this study was 4.5–6 × 10{sup 19} cm{sup −3} as measured by secondary ion mass spectroscopy. All p-type GaN films grown with an indium surfactant had higher p-type conductivities and higher hole concentrations than similar films grown without an indium surfactant. The lowest p-type GaN room temperature resistivity was 0.59 Ω-cm, and the highest room temperature carrier concentration was 1.6 × 10{sup 18} cm{sup −3}. Fits of the temperature-dependent carrier concentration data showed a one to two order of magnitude lower unintentional compensating defect concentration in samples grown with the indium surfactant. Samples grown at higher temperature had a lower active acceptor concentration. Improvements in band-edge luminescence were seen by cathodoluminescence for samples grown with the indium surfactant, confirming the trends seen in the Hall data.

  7. Effect of AlN buffer layer properties on the morphology and polarity of GaN nanowires grown by molecular beam epitaxy

    SciTech Connect (OSTI)

    Brubaker, Matt D.; Rourke, Devin M.; Sanford, Norman A.; Bertness, Kris A.; Bright, Victor M.

    2011-09-01

    Low-temperature AlN buffer layers grown via plasma-assisted molecular beam epitaxy on Si (111) were found to significantly affect the subsequent growth morphology of GaN nanowires. The AlN buffer layers exhibited nanowire-like columnar protrusions, with their size, shape, and tilt determined by the AlN V/III flux ratio. GaN nanowires were frequently observed to adopt the structural characteristics of the underlying AlN columns, including the size and the degree of tilt. Piezoresponse force microscopy and polarity-sensitive etching indicate that the AlN films and the protruding columns have a mixed crystallographic polarity. Convergent beam electron diffraction indicates that GaN nanowires are Ga-polar, suggesting that Al-polar columns are nanowire nucleation sites for Ga-polar nanowires. GaN nanowires of low density could be grown on AlN buffers that were predominantly N-polar with isolated Al-polar columns, indicating a high growth rate for Ga-polar nanowires and suppressed growth of N-polar nanowires under typical growth conditions. AlN buffer layers grown under slightly N-rich conditions (V/III flux ratio = 1.0 to 1.3) were found to provide a favorable growth surface for low-density, coalescence-free nanowires.

  8. ARM - SGP Geographic Information By Facility

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    Geographic Information By Facility SGP Related Links Virtual Tour Facilities and Instruments Central Facility Boundary Facility Extended Facility Intermediate Facility Radiometric Calibration Facility Geographic Information ES&H Guidance Statement Operations Science Field Campaigns Visiting the Site Summer Training SGP Fact Sheet Images Information for Guest Scientists Contacts SGP Geographic Information By Facility Note: BF = Boundary Facility, EF = Extended Facility, and IF = Intermediate

  9. STAR Facility Tritium Accountancy

    SciTech Connect (OSTI)

    R. J. Pawelko; J. P. Sharpe; B. J. Denny

    2007-09-01

    The Safety and Tritium Applied Research (STAR) facility has been established to provide a laboratory infrastructure for the fusion community to study tritium science associated with the development of safe fusion energy and other technologies. STAR is a radiological facility with an administrative total tritium inventory limit of 1.5g (14,429 Ci) [1]. Research studies with moderate tritium quantities and various radionuclides are performed in STAR. Successful operation of the STAR facility requires the ability to receive, inventory, store, dispense tritium to experiments, and to dispose of tritiated waste while accurately monitoring the tritium inventory in the facility. This paper describes tritium accountancy in the STAR facility. A primary accountancy instrument is the tritium Storage and Assay System (SAS): a system designed to receive, assay, store, and dispense tritium to experiments. Presented are the methods used to calibrate and operate the SAS. Accountancy processes utilizing the Tritium Cleanup System (TCS), and the Stack Tritium Monitoring System (STMS) are also discussed. Also presented are the equations used to quantify the amount of tritium being received into the facility, transferred to experiments, and removed from the facility. Finally, the STAR tritium accountability database is discussed.

  10. STAR facility tritium accountancy

    SciTech Connect (OSTI)

    Pawelko, R. J.; Sharpe, J. P.; Denny, B. J.

    2008-07-15

    The Safety and Tritium Applied Research (STAR) facility has been established to provide a laboratory infrastructure for the fusion community to study tritium science associated with the development of safe fusion energy and other technologies. STAR is a radiological facility with an administrative total tritium inventory limit of 1.5 g (14,429 Ci) [1]. Research studies with moderate tritium quantities and various radionuclides are performed in STAR. Successful operation of the STAR facility requires the ability to receive, inventory, store, dispense tritium to experiments, and to dispose of tritiated waste while accurately monitoring the tritium inventory in the facility. This paper describes tritium accountancy in the STAR facility. A primary accountancy instrument is the tritium Storage and Assay System (SAS): a system designed to receive, assay, store, and dispense tritium to experiments. Presented are the methods used to calibrate and operate the SAS. Accountancy processes utilizing the Tritium Cleanup System (TCS), and the Stack Tritium Monitoring System (STMS) are also discussed. Also presented are the equations used to quantify the amount of tritium being received into the facility, transferred to experiments, and removed from the facility. Finally, the STAR tritium accountability database is discussed. (authors)

  11. Nuclear Facilities | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    Nuclear Facilities Nuclear Facilities Nuclear Facilities Locator Map Numerical map data points indicate two or more nuclear facilities in the same geographic location. Nuclear Facilities List: Argonne National Laboratory East Tennessee Technology Park Hanford Idaho Site Los Alamos National Laboratory Lawrence Livermore National Laboratory Nevada National Security Site New Brunswick Laboratory Oak Ridge National Laboratory cont. Paducah Pantex Pacific Northwest National Laboratory Portsmouth

  12. ARM - Facility News Article

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    May 5, 2011 [Facility News] New Aircraft Probes in Action Again Bookmark and Share In March, ARM Aerial Facility scientist Jason Tomlinson met with colleagues at the University of North Dakota to assist in the integration of the probes onto the Citation aircraft and to provide training on the operation of the UHSAS-A (back) and HVPS-3 (front) instruments. In March, ARM Aerial Facility scientist Jason Tomlinson met with colleagues at the University of North Dakota to assist in the integration of

  13. Metal-smelting facility

    SciTech Connect (OSTI)

    Kellogg, D.R.; Mack, J.E.; Thompson, W.T.; Williams, L.C.

    1982-01-01

    Currently there are 90,000 tons of contaminated ferrous and nonferrous scrap metal stored in aboveground scrap yards at the Department of Energy's Uranium Enrichment Facilities in Tennessee, Kentucky, and Ohio. This scrap is primarily contaminated with 100 to 500 ppM uranium at an average enrichment of 1 to 1.5% /sup 235/U. A study was performed that evaluated smelting of the ORGDP metal in a reference facility located at Oak Ridge. The study defined the process systems and baseline requirements, evaluated alternatives to smelting, and provided capital and operating costs for the reference facility. A review of the results and recommendations of this study are presented.

  14. Facility Data Policy

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    Facility Data Policy About ESnet Our Mission The Network ESnet History Governance & Policies ESnet Policy Board ESCC Acceptable Use Policy Data Privacy Policy Facility Data Policy Career Opportunities ESnet Staff & Org Chart Contact Us Contact Us Technical Assistance: 1 800-33-ESnet (Inside US) 1 800-333-7638 (Inside US) 1 510-486-7600 (Globally) 1 510-486-7607 (Globally) Report Network Problems: trouble@es.net Provide Web Site Feedback: info@es.net Facility Data Policy ESnet Data

  15. ALD TiO2-Al2O3 Stack: An Improved Gate Dielectrics on Ga-polar GaN MOSCAPs

    DOE PAGES-Beta [OSTI]

    Wei, Daming; Edgar, James H.; Briggs, Dayrl P.; Srijanto, Bernadeta R.; Retterer, Scott T.; Meyer, III, Harry M.

    2014-10-15

    This research focuses on the benefits and properties of TiO2-Al2O3 nano-stack thin films deposited on Ga2O3/GaN by plasma-assisted atomic layer deposition (PA-ALD) for gate dielectric development. This combination of materials achieved a high dielectric constant, a low leakage current, and a low interface trap density. Correlations were sought between the films’ structure, composition, and electrical properties. The gate dielectrics were approximately 15 nm thick and contained 5.1 nm TiO2, 7.1 nm Al2O3 and 2 nm Ga2O3 as determined by spectroscopic ellipsometry. The interface carbon concentration, as measured by x-ray photoelectron spectroscopy (XPS) depth profile, was negligible for GaN pretreated bymore » thermal oxidation in O2 for 30 minutes at 850°C. The RMS roughness slightly increased after thermal oxidation and remained the same after ALD of the nano-stack, as determined by atomic force microscopy. The dielectric constant of TiO2-Al2O3 on Ga2O3/GaN was increased to 12.5 compared to that of pure Al2O3 (8~9) on GaN. In addition, the nano-stack's capacitance-voltage (C-V) hysteresis was small, with a total trap density of 8.74 × 1011 cm-2. The gate leakage current density (J=2.81× 10-8 A/cm2) was low at +1 V gate bias. These results demonstrate the promising potential of plasma ALD deposited TiO2/Al2O3 for serving as the gate oxide on Ga2O3/GaN based MOS devices.« less

  16. NREL: Research Facilities Home Page

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    NREL Research Facilities Here you'll find information about the National Renewable Energy Laboratory's R&D facility and laboratory capabilities. These state-of-the-art facilities...

  17. ARM - Facility News Article

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    The T-1 telephone lines at the four SGP boundary facilities were replaced with satellite ... greatly reduced the demand for dedicated, high-capacity T-1 data transmission lines. ...

  18. ARM - Facility News Article

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    5, 2009 Facility News Turning a New Page with Facebook; Are You a Fan? Bookmark and Share Keep up with the ARM Climate Research Facilty via Facebook Keep up with the ARM Climate...

  19. ARM - Facility News Article

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    held this year in Seattle from January 24-28, scientists are presenting dozens of oral and poster sessions describing their research using data from the user facility. Here...

  20. Summary - WTP Pretreatment Facility

    Office of Environmental Management (EM)

    DOE is Immob site's t facilitie purpos techno Facility to be i The as CTEs, Readin * C * C * W * Tr * U * Pu * W * H * Pl The as require The Ele Site: H roject: W Report Date: M ...

  1. ARM - Facility News Article

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    Dust Using Data from Africa Bookmark and Share In 2006, the ARM Mobile Facility joined the AMMA project to obtain data for scientists to study the impact that airborne Saharan dust ...

  2. ARM - Facility News Article

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    September 30, 2009 Facility News Climate Change Lesson Plan Selected for MyHealthySchool.com Bookmark and Share A lesson plan about climate change in the Arctic was selected by ...

  3. ARM Climate Research Facility

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    World's premier ground-based observations facility advancing climate change research Feature A-OK in Oklahoma: SGP Reconfiguration is Right on Track A-OK in Oklahoma: SGP ...

  4. B Plant facility description

    SciTech Connect (OSTI)

    Chalk, S.E.

    1996-10-04

    Buildings 225B, 272B, 282B, 282BA, and 294B were removed from the B Plant facility description. Minor corrections were made for tank sizes and hazardous and toxic inventories.

  5. NETL - Fuel Reforming Facilities

    ScienceCinema (OSTI)

    None

    2016-07-12

    Research using NETL's Fuel Reforming Facilities explores catalytic issues inherent in fossil-energy related applications, including catalyst synthesis and characterization, reaction kinetics, catalyst activity and selectivity, catalyst deactivation, and stability.

  6. ARM - Facility News Article

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    March 31, 2008 Facility News Interagency Land Use Agreement Signed for North Slope of Alaska Bookmark and Share As scientific neighbors on Alaska's North Slope, the ARM site at...

  7. ARM - Facility News Article

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    November 8, 2008 Facility News See ARM Data in a New Light Bookmark and Share Two new visualization tools are now available from the ARM Data Archive to help you plot and package...

  8. ARM - Facility News Article

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    group photo near the ARM millimeter wave cloud radar at the SGP Central Facility. Mike Jensen, principle investigator for the campaign, is second from left. Photo courtesy of Brad...

  9. ARM - Facility News Article

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    Preparations Underway for 2007 ARM Mobile Facility Deployment in Germany Bookmark and Share In the Black Forest region of Germany, the COPS field campaign will cover an area of ...

  10. ARM - Facility News Article

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    An eleven member Science Board, chaired by Dr. Chris Duffy, Penn State University, has been selected to serve as an independent review body for the ARM Climate Research Facility ...

  11. ARM - Facility News Article

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    31, 2010 Facility News Instruments on Mt. Pico to Supplement Measurements from Graciosa Island Bookmark and Share At an elevation of about 2225 meters-usually above the marine...

  12. ARM - Facility News Article

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    the ARM Mobile Facility. ARM participated in the Student Exploration of Research in the Earth and Space Sciences (EXPRESS) program held on the last day of the 2005 AGU Fall...

  13. ARM - Facility News Article

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    the meeting. Visitors from as far away as Tibet, Korea, and Tasmania visited the ARM booth. Most visitors were interested in learning about the scope of the user facility, the...

  14. ARM - Facility News Article

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    30, 2006 Facility News Precipitation Sensor on Duty at North Slope of Alaska Bookmark and Share The precipitation sensor was installed about 5 feet above the surface on the...

  15. ARM - Facility News Article

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    Mobile Facility Anchors Multi-site Aerosol Study in China Bookmark and Share The AMF ... data collection at four different sites for the Aerosol Indirect Effects Study in China. ...

  16. ARM - Facility News Article

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    test period, plans are to deploy the new technology to both ARM Mobile Facilities and the Tropical Western Pacific sites in Darwin, Australia, and Manus Island, Papua New Guinea. ...

  17. ARM - Facility News Article

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    Water Vapor Network at SGP Site Goes Offline Bookmark and Share Each of the 24 solar-powered GPS stations streamed data via a wireless network to the SGP Central Facility for data ...

  18. ARM - Facility News Article

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    to look at the science programs currently in place in Barrow, and to tour a proposed hospital site and the new Barrow Global Climate Change Research Facility currently under...

  19. ARM - Facility News Article

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    2, 2006 Facility News New NSA Site Manager Named; Science Liaison Joins the Team Bookmark and Share Dr. Mark Ivey to be NSA Site Manager beginning October 1. As of October 1, Dr. ...

  20. ARM - Facility News Article

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    and Share In January 2006, the ARM Mobile Facility (AMF) begins a year-long field campaign in Africa as part of a multi-year international experiment called the African...

  1. ARM - Facility News Article

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    May 11, 2012 Education, Facility News Fairbanks Middle Schoolers Enjoy Field Trip to Barrow Bookmark and Share Watershed School's bundled-up 8th grade class and their chaperones...

  2. ARM - Facility News Article

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    March 31, 2007 Facility News Radiometers Operate in Low Water Vapor Conditions in Barrow, Alaska Bookmark and Share A researcher checks the GVR antennae on a cold, crisp day at...

  3. Photovoltaic Research Facilities

    Office of Energy Efficiency and Renewable Energy (EERE)

    The U.S. Department of Energy (DOE) funds photovoltaic (PV) research and development (R&D) at its national laboratory facilities located throughout the country. To encourage further innovation,...

  4. ARM - Facility News Article

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    August 31, 2009 Facility News North Slope Operations Get a Big Lift Bookmark and Share Operations capabilities at the ARM site in Barrow now include a telehandler that can...

  5. ARM - Facility News Article

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    February 29, 2008 Facility News Radar Focus Group Zeroes in on Data Quality Bookmark and Share On the roof of the radar instrument shelter at the ARM Southern Great Plains site,...

  6. NETL - Fuel Reforming Facilities

    SciTech Connect (OSTI)

    2013-06-12

    Research using NETL's Fuel Reforming Facilities explores catalytic issues inherent in fossil-energy related applications, including catalyst synthesis and characterization, reaction kinetics, catalyst activity and selectivity, catalyst deactivation, and stability.

  7. ARM - Facility News Article

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    May 8, 2008 Facility News Cover Combines Images from Arctic Field Campaign Bookmark and Share Cover of the latest report from the U.S. Interagency Arctic Research Policy ...

  8. ARM - Facility News Article

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    April 15, 2008 Facility News CLASIC Discussed at Workshop in Oklahoma Bookmark and Share ... Studies at the University of Oklahoma hosted a workshop on March 26-27 for ...

  9. ARM - Facility News Article

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    July 8, 2014 Facility News Studying the Sky-Day and Night Bookmark and Share The Infrared Sky Imager (IRSI) may replace the Total Sky Imager (TSI) for measuring cloud fraction at...

  10. ARM - Facility News Article

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    30, 2009 Facility News Smart Filter Clears the Way for Speedy Data Transfer Bookmark and Share These data plots illustrate the results of the smart filter in reducing the volume...

  11. ARM - Facility News Article

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    2, 2014 Facility News First MAGIC Workshop Discusses Future of Marine Clouds Bookmark and Share MAGIC route with June-July-August average low-level cloud cover, GPCI transect,...

  12. ARM - Facility News Article

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    August 19, 2015 Facility News New ASR Program Manager Selected Bookmark and Share Dr. Shaima Nasiri, ASR Program Manager, U.S. Department of Energy Dr. Shaima Nasiri, ASR Program...

  13. Facility Modernization Report

    SciTech Connect (OSTI)

    Robinson, D; Ackley, R

    2007-05-10

    Modern and technologically up-to-date facilities and systems infrastructure are necessary to accommodate today's research environment. In response, Lawrence Livermore National Laboratory (LLNL) has a continuing commitment to develop and apply effective management models and processes to maintain, modernize, and upgrade its facilities to meet the science and technology mission. The Facility Modernization Pilot Study identifies major subsystems of facilities that are either technically or functionally obsolete, lack adequate capacity and/or capability, or need to be modernized or upgraded to sustain current operations and program mission. This study highlights areas that need improvement, system interdependencies, and how these systems/subsystems operate and function as a total productive unit. Although buildings are 'grandfathered' in and are not required to meet current codes unless there are major upgrades, this study also evaluates compliance with 'current' building, electrical, and other codes. This study also provides an evaluation of the condition and overall general appearance of the structure.

  14. ARM - Facility News Article

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    1, 2015 Facility News Submit Your AGU Presentation to ARM and ASR Bookmark and Share Submit your AGU presentations or posters by November 2 and we'll help get people to your...

  15. Projects & Facilities - Hanford Site

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    300 Area 324 Building 325 Building 400 AreaFast Flux Test Facility 618-10 and 618-11 Burial Grounds 700 Area B Plant B Reactor C Reactor Canister Storage Building Canyon ...

  16. ARM - Facility News Article

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    December 28, 2010 Facility News First Data from Darwin Raman Lidar Bookmark and Share Since 1996, the ARM Southern Great Plains site has maintained one of the few operational...

  17. ARM - Facility News Article

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    15, 2009 Facility News Internet Upgrade Speeds Data Transfer from Tropics Bookmark and Share http:images.arm.govarmimagesMMCR0MMCR.mpgView this video to see how the...

  18. ARM - Facility News Article

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    October 6, 2010 Facility News New Raman Lidar En Route to Australia Bookmark and Share Since 1996, the ARM Southern Great Plains site has maintained one of the few operational...

  19. ARM - Facility News Article

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    file storage needs of the ARM Data Management Facility (DMF) and ARM Engineering computers, a Network Appliance (NetApp) file server with 2.68 terabytes, or 2.95 trillion...

  20. ARM - Facility News Article

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    8, 2010 Facility News TWP Site Scientist Selected for Journal's Editorial Board Bookmark and Share Dr. Long was recently selected as a member of the editorial board of The Open...

  1. ARM - Facility News Article

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    13, 2006 Facility News Dr. Steve Ghan Appointed to Journal of Geophysical Research Editorial Board Bookmark and Share Dr. Steve Ghan was recently appointed as an editor for the...

  2. ARM - Facility News Article

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    to show Bamzai, her husband, and daughter around the site. From the warmth of the crew cab pickup, they toured the Central Facility, which is the heart of the SGP site, not to...

  3. ARM - Facility News Article

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    October 15, 2007 Facility News Kelle Smith Replaces Jan Gunter as ExtraView Administrator Bookmark and Share Kelle Smith assumed the duties of ExtraView administrator after Jan ...

  4. ARM - Facility News Article

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    4, 2012 [Facility News] New Organization to Optimize ARM Radar Data Bookmark and Share Every ARM fixed and mobile site now includes both scanning (left) and zenith-pointing (right) cloud radars. The fixed sites also include scanning precipitation radars. Every ARM fixed and mobile site now includes both scanning (left) and zenith-pointing (right) cloud radars. The fixed sites also include scanning precipitation radars. In the past few years, the ARM Facility added 19 new scanning cloud and

  5. ARM - Facility News Article

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    June 15, 2010 [Facility News] Up, Up, and Away-Automated Balloon Launcher Headed to North Slope Bookmark and Share The balloon-borne sounding system (BBSS) operates at ARM's three fixed sites and the ARM Mobile Facility. Sondes, launched into the air, provide information about the atmosphere's temperature, moisture, pressure, and wind speed. Performing regular balloon launches can be difficult, even dangerous, in the arctic climates of the North Slope of Alaska (NSA). But a new instrument system

  6. ARM - Facility News Article

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    6, 2015 [Facility News] Calling All Data Archive Users Bookmark and Share DataArchive You will need to update your ARM data profile as soon as possible as part of new government reporting requirements. Researchers access data collected through the routine operations and scientific field experiments of the ARM Facility through the ARM Data Archive. An updated registration form requests information about the scientific project for which you are using ARM data. This information is a new requirement

  7. ARM - Facility News Article

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    10, 2016 [Facility News, Publications] ACME/ARM/ASR, or AAA, Workshop Report Available on DOE Website Bookmark and Share CESD_Report_2016_ACME.indd While the U.S. Department of Energy's (DOE's) Atmospheric Radiation Measurement (ARM) Climate Research Facility and Atmospheric System Research (ASR) and Earth System Modeling (ESM) programs have made considerable contributions to the understanding of the atmospheric component of Earth's climate system and to development and evaluation of global

  8. ARM - Facility News Article

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    June 20, 2016 [Facility News] Small ARM Campaigns Do Big Science, and You Could Too Bookmark and Share Next round of deadlines for small campaigns coming up; five recently approved campaigns span from Ascension Island to Mount Bachelor Not every science campaign requires a full deployment of ARM Climate Research Facility equipment; important work can be done with just an instrument or two, or in conjunction with a larger operation. These projects fall under the category of ARM's small campaigns.

  9. ARM - Facility News Article

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    ARM's New Radar Operating Paradigm Aims to Maximize Performance Bookmark and Share Maintaining the pulse of the radar network is vital to research A Scanning ARM Cloud Radar is deployed with the ARM Mobile Facility on Antarctica for the ARM West Antarctic Radiation Experiment campaign. A Scanning ARM Cloud Radar is deployed with the ARM Mobile Facility on Antarctica for the ARM West Antarctic Radiation Experiment campaign. Radars have been getting a lot of attention at ARM in the last few

  10. ARM - Facility News Article

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    May 15, 2006 [Facility News] New Micropulse Lidars to Replace Old Ones; Deployments Begin at SGP Bookmark and Share A representative from Sigma Space Corporation demonstrates the operation of the new micropulse lidar to ARM instrument mentors and site operations technicians. On May 3, the first of seven new and upgraded micropulse lidars (MPLs) was deployed at the ARM Southern Great Plains (SGP) site's Central Facility. These seven identical systems (including one spare) will replace the

  11. ARM - Facility News Article

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    26, 2010 [Facility News] ARM Science Board Welcomes New Members Bookmark and Share Several new members have joined the ARM Science Board. This eleven-member board is an independent body that reviews proposals for use of the ARM Climate Research Facility. The board is preparing to review the recently received proposals for the FY2012 campaigns and will be meeting in August. Thanks to the following outgoing Science Board members for their service. Dr. Dave Bader, Lawrence Livermore National

  12. ARGONNE LEADERSHIP COMPUTING FACILITY

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    SCIENCE ARGONNE LEADERSHIP COMPUTING FACILITY On the cover Collapse of spherical cloud with 50,000 bubbles. The generation of microjets directed toward the cloud center causes the formation of cap-like bubble shapes. Image credit: Computational Science and Engineering Laboratory, ETH Zürich, Switzerland ARGONNE LEADERSHIP COMPUTING FACILITY 2016 SCIENCE HIGHLIGHTS 2016 ALCF SCIENCE HIGHLIGHTS 1 TABLE OF CONTENTS 4 About ALCF 5 Science Director's Message 6 Allocation and Application Programs

  13. Programs & User Facilities

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    Science Programs » Office of Science » Programs & User Facilities Programs & User Facilities Enabling remarkable discoveries, tools that transform our understanding of energy and matter and advance national, economic, and energy security Advanced Scientific Computing Research Applied Mathematics Co-Design Centers Exascale Co-design Center for Materials in Extreme Environments (ExMatEx) Center for Exascale Simulation of Advanced Reactors (CESAR) Center for Exascale Simulation of

  14. ARM - Facility News Article

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    September 19, 2016 [Facility News] Upcoming Election for ARM User Executive Committee Bookmark and Share Pavlos Kollias, ARM User Executive Committee member (right) Pavlos Kollias, ARM User Executive Committee member (right) Make a Difference: Get Involved Nominations are underway for the ARM Facility's User Executive committee (UEC). The UEC is made up of scientific users of ARM data. Members are selected according to popular vote by the users according to science areas. This year, in addition

  15. Mound facility physical characterization

    SciTech Connect (OSTI)

    Tonne, W.R.; Alexander, B.M.; Cage, M.R.; Hase, E.H.; Schmidt, M.J.; Schneider, J.E.; Slusher, W.; Todd, J.E.

    1993-12-01

    The purpose of this report is to provide a baseline physical characterization of Mound`s facilities as of September 1993. The baseline characterizations are to be used in the development of long-term future use strategy development for the Mound site. This document describes the current missions and alternative future use scenarios for each building. Current mission descriptions cover facility capabilities, physical resources required to support operations, current safety envelope and current status of facilities. Future use scenarios identify potential alternative future uses, facility modifications required for likely use, facility modifications of other uses, changes to safety envelope for the likely use, cleanup criteria for each future use scenario, and disposition of surplus equipment. This Introductory Chapter includes an Executive Summary that contains narrative on the Functional Unit Material Condition, Current Facility Status, Listing of Buildings, Space Plans, Summary of Maintenance Program and Repair Backlog, Environmental Restoration, and Decontamination and Decommissioning Programs. Under Section B, Site Description, is a brief listing of the Site PS Development, as well as Current Utility Sources. Section C contains Site Assumptions. A Maintenance Program Overview, as well as Current Deficiencies, is contained within the Maintenance Program Chapter.

  16. Temperature-dependent Raman and ultraviolet photoelectron spectroscopy studies on phase transition behavior of VO{sub 2} films with M1 and M2 phases

    SciTech Connect (OSTI)

    Okimura, Kunio Hanis Azhan, Nurul; Hajiri, Tetsuya; Kimura, Shin-ichi; Zaghrioui, Mustapha; Sakai, Joe

    2014-04-21

    Structural and electronic phase transitions behavior of two polycrystalline VO{sub 2} films, one with pure M1 phase and the other with pure M2 phase at room temperature, were investigated by temperature-controlled Raman spectroscopy and ultraviolet photoelectron spectroscopy (UPS). We observed characteristic transient dynamics in which the Raman modes at 195 cm{sup −1} (V-V vibration) and 616 cm{sup −1} (V-O vibration) showed remarkable hardening along the temperature in M1 phase film, indicating the rearrangements of V-V pairs and VO{sub 6} octahedra. It was also shown that the M1 Raman mode frequency approached those of invariant M2 peaks before entering rutile phase. In UPS spectra with high energy resolution of 0.03 eV for the M2 phase film, narrower V{sub 3d} band was observed together with smaller gap compared to those of M1 phase film, supporting the nature of Mott insulator of M2 phase even in the polycrystalline film. Cooperative behavior of lattice rearrangements and electronic phase transition was suggested for M1 phase film.

  17. ORP Projects & Facilities - Hanford Site

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    Facilities Office of River Protection About ORP ORP Projects & Facilities Tank Farms Waste Treatment & Immobilization Plant 222-S Laboratory 242-A Evaporator Newsroom Contracts &...

  18. Facilities | Photosynthetic Antenna Research Center

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    Facilities Facilities PARC has three laboratories located in Brauer Hall on the Danforth Campus at Washington University in St. Louis. These labs are available to all PARC members...

  19. National Solar Thermal Test Facility

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    Nuclear Energy Defense Waste Management Programs Advanced Nuclear Energy Nuclear Energy Safety Technologies Facilities Battery Abuse Testing Laboratory Cylindrical Boiling Facility ...

  20. Defense Nuclear Facility Safety Board

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    8, 2014 Defense Nuclear Facility Safety Board Defense Nuclear Facility Safety Board (DNSFB) Vice Chairwoman Jesse Roberson visited and toured the WIPP site this week. While ...

  1. Mixed Oxide Fuel Fabrication Facility

    National Nuclear Security Administration (NNSA)

    0%2A en Mixed Oxide (MOX) Fuel Fabrication Facility http:nnsa.energy.govfieldofficessavannah-river-field-officemixed-oxide-mox-fuel-fabrication-facility

  2. Beryllium Facilities & Areas - Hanford Site

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    Controlled Facilities that have been Demolished Outdoor Areas where Beryllium Contamination has been Identified Hanford Projects and Facilities - Descriptions Former Hanford...

  3. Facility Disposition Safety Strategy RM

    Energy.gov [DOE]

    The Facility Disposition Safety Strategy (FDSS) Review Module is a tool that assists DOE federal project review teams in evaluating the adequacy of the facility documentation, preparations or...

  4. National Solar Thermal Test Facility

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    SunShot Grand Challenge: Regional Test Centers National Solar Thermal Test Facility HomeTag:National Solar Thermal Test Facility Permalink Air Force Research Laboratory Testing ...

  5. Radiological Training for Tritium Facilities

    Energy Savers

    Change Notice No. 2 May 2007 DOE HANDBOOK RADIOLOGICAL TRAINING FOR TRITIUM FACILITIES ... Change Notice 2. Radiological Safety Training for Tritium Facilities ...

  6. National Solar Thermal Test Facility

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    SunShot Grand Challenge: Regional Test Centers National Solar Thermal Test Facility HomeTag:National Solar Thermal Test Facility Illuminated receiver on top of tower Permalink ...

  7. National Solar Thermal Test Facility

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    Stationary PowerEnergy Conversion EfficiencySolar EnergyConcentrating Solar Power (CSP)National Solar Thermal Test Facility National Solar Thermal Test Facility admin ...

  8. Facilities | Energy Systems Integration | NREL

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    Photo of the Hydrogen Infrastructure Testing and Research Facility building, with fuel cell charging stations and vehicles Hydrogen Infrastructure Testing and Research Facility A ...

  9. Vehicle Technologies Office Merit Review 2014: Advanced Low-Cost SiC and GaN Wide Bandgap Inverters for Under-the-Hood Electric Vehicle Traction Drives

    Energy.gov [DOE]

    Presentation given by APEI Inc. at 2014 DOE Hydrogen and Fuel Cells Program and Vehicle Technologies Office Annual Merit Review and Peer Evaluation Meeting about Advanced low-cost SIC and GaN wide...

  10. Vehicle Technologies Office Merit Review 2015: Advanced Low-Cost SiC and GaN Wide Bandgap Inverters for Under-the-Hood Electric Vehicle Traction Drives

    Energy.gov [DOE]

    Presentation given by APEI Inc. at 2015 DOE Hydrogen and Fuel Cells Program and Vehicle Technologies Office Annual Merit Review and Peer Evaluation Meeting about advanced low-cost SiC and GaN wide...

  11. Role of an ultra-thin AlN/GaN superlattice interlayer on the strain engineering of GaN films grown on Si(110) and Si(111) substrates by plasma-assisted molecular beam epitaxy

    SciTech Connect (OSTI)

    Shen, X. Q.; Takahashi, T.; Matsuhata, H.; Ide, T.; Shimizu, M.; Rong, X.; Chen, G.; Wang, X. Q.; Shen, B.

    2013-12-02

    We investigate the role of an ultra-thin AlN/GaN superlattice interlayer (SL-IL) on the strain engineering of the GaN films grown on Si(110) and Si(111) substrates by plasma-assisted molecular beam epitaxy. It is found that micro-cracks limitted only at the SL-IL position are naturally generated. These micro-cracks play an important role in relaxing the tensile strain caused by the difference of the coefficient of thermal expansion between GaN and Si and keeping the residual strain in the crack-free GaN epilayers resulted from the SL-IL during the growth. The mechanism understanding of the strain modulation by the SL-IL in the GaN epilayers grown on Si substrates makes it possible to design new heterostructures of III-nitrides for optic and electronic device applications.

  12. Metro Wastewater Reclamation District Biomass Facility | Open...

    Open Energy Information (Open El) [EERE & EIA]

    Wastewater Reclamation District Biomass Facility Jump to: navigation, search Name Metro Wastewater Reclamation District Biomass Facility Facility Metro Wastewater Reclamation...

  13. Jackson Greenhouses Greenhouse Low Temperature Geothermal Facility...

    Open Energy Information (Open El) [EERE & EIA]

    Greenhouse Low Temperature Geothermal Facility Jump to: navigation, search Name Jackson Greenhouses Greenhouse Low Temperature Geothermal Facility Facility Jackson...

  14. Fish Producers Aquaculture Low Temperature Geothermal Facility...

    Open Energy Information (Open El) [EERE & EIA]

    Aquaculture Low Temperature Geothermal Facility Jump to: navigation, search Name Fish Producers Aquaculture Low Temperature Geothermal Facility Facility Fish Producers...

  15. Flint Greenhouses Greenhouse Low Temperature Geothermal Facility...

    Open Energy Information (Open El) [EERE & EIA]

    Greenhouses Greenhouse Low Temperature Geothermal Facility Jump to: navigation, search Name Flint Greenhouses Greenhouse Low Temperature Geothermal Facility Facility Flint...

  16. Sunnybrook Farms Aquaculture Low Temperature Geothermal Facility...

    Open Energy Information (Open El) [EERE & EIA]

    Sunnybrook Farms Aquaculture Low Temperature Geothermal Facility Jump to: navigation, search Name Sunnybrook Farms Aquaculture Low Temperature Geothermal Facility Facility...

  17. Bigfork Greenhouses Greenhouse Low Temperature Geothermal Facility...

    Open Energy Information (Open El) [EERE & EIA]

    Bigfork Greenhouses Greenhouse Low Temperature Geothermal Facility Jump to: navigation, search Name Bigfork Greenhouses Greenhouse Low Temperature Geothermal Facility Facility...

  18. Crook's Greenhouse Greenhouse Low Temperature Geothermal Facility...

    Open Energy Information (Open El) [EERE & EIA]

    Crook's Greenhouse Greenhouse Low Temperature Geothermal Facility Jump to: navigation, search Name Crook's Greenhouse Greenhouse Low Temperature Geothermal Facility Facility...

  19. Duckwater Aquaculture Low Temperature Geothermal Facility | Open...

    Open Energy Information (Open El) [EERE & EIA]

    Duckwater Aquaculture Low Temperature Geothermal Facility Jump to: navigation, search Name Duckwater Aquaculture Low Temperature Geothermal Facility Facility Duckwater Sector...

  20. DOE Designated User Facilities | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    Designated User Facilities DOE Designated User Facilities DOE Designated User Facilities Sept 30 2015 More Documents & Publications Microsoft Word - DesignatedUserFacilitiesApri...

  1. Ultrafast Laser Facility | Photosynthetic Antenna Research Center

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    Ultrafast Laser Facility Ultrafast Laser Facility Click for an Overview of the Ultrafast Laser Facility The PARC Ultrafast Laser Facility, under the direction of Associate Director ...

  2. Randolph Electric Biomass Facility | Open Energy Information

    Open Energy Information (Open El) [EERE & EIA]

    Biomass Facility Jump to: navigation, search Name Randolph Electric Biomass Facility Facility Randolph Electric Sector Biomass Facility Type Landfill Gas Location Norfolk County,...

  3. Westchester Landfill Biomass Facility | Open Energy Information

    Open Energy Information (Open El) [EERE & EIA]

    Landfill Biomass Facility Jump to: navigation, search Name Westchester Landfill Biomass Facility Facility Westchester Landfill Sector Biomass Facility Type Landfill Gas Location...

  4. Biodyne Pontiac Biomass Facility | Open Energy Information

    Open Energy Information (Open El) [EERE & EIA]

    Pontiac Biomass Facility Jump to: navigation, search Name Biodyne Pontiac Biomass Facility Facility Biodyne Pontiac Sector Biomass Facility Type Non-Fossil Waste Location...

  5. San Marcos Biomass Facility | Open Energy Information

    Open Energy Information (Open El) [EERE & EIA]

    Marcos Biomass Facility Jump to: navigation, search Name San Marcos Biomass Facility Facility San Marcos Sector Biomass Facility Type Landfill Gas Location San Diego County,...

  6. Sunset Farms Biomass Facility | Open Energy Information

    Open Energy Information (Open El) [EERE & EIA]

    Farms Biomass Facility Jump to: navigation, search Name Sunset Farms Biomass Facility Facility Sunset Farms Sector Biomass Facility Type Landfill Gas Location Travis County, Texas...

  7. East Bridgewater Biomass Facility | Open Energy Information

    Open Energy Information (Open El) [EERE & EIA]

    Bridgewater Biomass Facility Jump to: navigation, search Name East Bridgewater Biomass Facility Facility East Bridgewater Sector Biomass Facility Type Landfill Gas Location...

  8. Biodyne Lyons Biomass Facility | Open Energy Information

    Open Energy Information (Open El) [EERE & EIA]

    Lyons Biomass Facility Jump to: navigation, search Name Biodyne Lyons Biomass Facility Facility Biodyne Lyons Sector Biomass Facility Type Landfill Gas Location Cook County,...

  9. Reliant Conroe Biomass Facility | Open Energy Information

    Open Energy Information (Open El) [EERE & EIA]

    Conroe Biomass Facility Jump to: navigation, search Name Reliant Conroe Biomass Facility Facility Reliant Conroe Sector Biomass Facility Type Landfill Gas Location Montgomery...

  10. Otay Biomass Facility | Open Energy Information

    Open Energy Information (Open El) [EERE & EIA]

    Otay Biomass Facility Jump to: navigation, search Name Otay Biomass Facility Facility Otay Sector Biomass Facility Type Landfill Gas Location San Diego County, California...

  11. Wheelabrator Saugus Biomass Facility | Open Energy Information

    Open Energy Information (Open El) [EERE & EIA]

    Saugus Biomass Facility Jump to: navigation, search Name Wheelabrator Saugus Biomass Facility Facility Wheelabrator Saugus Sector Biomass Facility Type Municipal Solid Waste...

  12. Biodyne Peoria Biomass Facility | Open Energy Information

    Open Energy Information (Open El) [EERE & EIA]

    Peoria Biomass Facility Jump to: navigation, search Name Biodyne Peoria Biomass Facility Facility Biodyne Peoria Sector Biomass Facility Type Landfill Gas Location Peoria County,...

  13. Biodyne Springfield Biomass Facility | Open Energy Information

    Open Energy Information (Open El) [EERE & EIA]

    Springfield Biomass Facility Jump to: navigation, search Name Biodyne Springfield Biomass Facility Facility Biodyne Springfield Sector Biomass Facility Type Landfill Gas Location...

  14. Raft River Geothermal Facility | Open Energy Information

    Open Energy Information (Open El) [EERE & EIA]

    Facility Jump to: navigation, search GEOTHERMAL ENERGYGeothermal Home Raft River Geothermal Facility General Information Name Raft River Geothermal Facility Facility Raft River...

  15. Kiefer Landfill Biomass Facility | Open Energy Information

    Open Energy Information (Open El) [EERE & EIA]

    Kiefer Landfill Biomass Facility Jump to: navigation, search Name Kiefer Landfill Biomass Facility Facility Kiefer Landfill Sector Biomass Facility Type Landfill Gas Location...

  16. Facility Environmental Vulnerability Assessment

    SciTech Connect (OSTI)

    Van Hoesen, S.D.

    2001-07-09

    From mid-April through the end of June 2001, a Facility Environmental Vulnerability Assessment (FEVA) was performed at Oak Ridge National Laboratory (ORNL). The primary goal of this FEVA was to establish an environmental vulnerability baseline at ORNL that could be used to support the Laboratory planning process and place environmental vulnerabilities in perspective. The information developed during the FEVA was intended to provide the basis for management to initiate immediate, near-term, and long-term actions to respond to the identified vulnerabilities. It was expected that further evaluation of the vulnerabilities identified during the FEVA could be carried out to support a more quantitative characterization of the sources, evaluation of contaminant pathways, and definition of risks. The FEVA was modeled after the Battelle-supported response to the problems identified at the High Flux Beam Reactor at Brookhaven National Laboratory. This FEVA report satisfies Corrective Action 3A1 contained in the Corrective Action Plan in Response to Independent Review of the High Flux Isotope Reactor Tritium Leak at the Oak Ridge National Laboratory, submitted to the Department of Energy (DOE) ORNL Site Office Manager on April 16, 2001. This assessment successfully achieved its primary goal as defined by Laboratory management. The assessment team was able to develop information about sources and pathway analyses although the following factors impacted the team's ability to provide additional quantitative information: the complexity and scope of the facilities, infrastructure, and programs; the significantly degraded physical condition of the facilities and infrastructure; the large number of known environmental vulnerabilities; the scope of legacy contamination issues [not currently addressed in the Environmental Management (EM) Program]; the lack of facility process and environmental pathway analysis performed by the accountable line management or facility owner; and poor

  17. Formation of GaN quantum dots by molecular beam epitaxy using NH{sub 3} as nitrogen source

    SciTech Connect (OSTI)

    Damilano, B. Brault, J.; Massies, J.

    2015-07-14

    Self-assembled GaN quantum dots (QDs) in Al{sub x}Ga{sub 1−x}N (0.3 ≤ x ≤ 1) were grown on c-plane sapphire and Si (111) substrates by molecular beam epitaxy using ammonia as nitrogen source. The QD formation temperature was varied from 650 °C to 800 °C. Surprisingly, the density and size of QDs formed in this temperature range are very similar. This has been explained by considering together experimental results obtained from reflection high-energy electron diffraction, atomic force microscopy, and photoluminescence to discuss the interplay between thermodynamics and kinetics in the QD formation mechanisms. Finally, possible ways to better control the QD optical properties are proposed.

  18. Phase-field simulations of GaN growth by selective area epitaxy from complex mask geometries

    SciTech Connect (OSTI)

    Aagesen, Larry K.; Thornton, Katsuyo; Coltrin, Michael E.; Han, Jung

    2015-05-21

    Three-dimensional phase-field simulations of GaN growth by selective area epitaxy were performed. The model includes a crystallographic-orientation-dependent deposition rate and arbitrarily complex mask geometries. The orientation-dependent deposition rate can be determined from experimental measurements of the relative growth rates of low-index crystallographic facets. Growth on various complex mask geometries was simulated on both c-plane and a-plane template layers. Agreement was observed between simulations and experiment, including complex phenomena occurring at the intersections between facets. The sources of the discrepancies between simulated and experimental morphologies were also investigated. The model provides a route to optimize masks and processing conditions during materials synthesis for solar cells, light-emitting diodes, and other electronic and opto-electronic applications.

  19. Phase-field simulations of GaN growth by selective area epitaxy on complex mask geometries

    DOE PAGES-Beta [OSTI]

    Aagesen, Larry K.; Coltrin, Michael Elliott; Han, Jung; Thornton, Katsuyo

    2015-05-15

    Three-dimensional phase-field simulations of GaN growth by selective area epitaxy were performed. Furthermore, this model includes a crystallographic-orientation-dependent deposition rate and arbitrarily complex mask geometries. The orientation-dependent deposition rate can be determined from experimental measurements of the relative growth rates of low-index crystallographic facets. Growth on various complex mask geometries was simulated on both c-plane and a-plane template layers. Agreement was observed between simulations and experiment, including complex phenomena occurring at the intersections between facets. The sources of the discrepancies between simulated and experimental morphologies were also investigated. We found that the model provides a route to optimize masks andmore » processing conditions during materials synthesis for solar cells, light-emitting diodes, and other electronic and opto-electronic applications.« less

  20. Phase-field simulations of GaN growth by selective area epitaxy on complex mask geometries

    SciTech Connect (OSTI)

    Aagesen, Larry K.; Coltrin, Michael Elliott; Han, Jung; Thornton, Katsuyo

    2015-05-15

    Three-dimensional phase-field simulations of GaN growth by selective area epitaxy were performed. Furthermore, this model includes a crystallographic-orientation-dependent deposition rate and arbitrarily complex mask geometries. The orientation-dependent deposition rate can be determined from experimental measurements of the relative growth rates of low-index crystallographic facets. Growth on various complex mask geometries was simulated on both c-plane and a-plane template layers. Agreement was observed between simulations and experiment, including complex phenomena occurring at the intersections between facets. The sources of the discrepancies between simulated and experimental morphologies were also investigated. We found that the model provides a route to optimize masks and processing conditions during materials synthesis for solar cells, light-emitting diodes, and other electronic and opto-electronic applications.

  1. Polarity characterization by anomalous x-ray dispersion of ZnO films and GaN lateral polar structures

    SciTech Connect (OSTI)

    Shelton, Christopher T.; Sachet, Edward; Paisley, Elizabeth A.; Hoffmann, Marc P.; Rajan, Joseph; Collazo, Ramn; Sitar, Zlatko; Maria, Jon-Paul

    2014-01-28

    We demonstrate the use of anomalous x-ray scattering of constituent cations at their absorption edge, in a conventional Bragg-Brentano diffractometer, to measure absolutely and quantitatively the polar orientation and polarity fraction of unipolar and mixed polar wurtzitic crystals. In one set of experiments, the gradual transition between c+ and c? polarity of epitaxial ZnO films on sapphire as a function of MgO buffer layer thickness is monitored quantitatively, while in a second experiment, we map the polarity of a lateral polar homojunction in GaN. The dispersion measurements are compared with piezoforce microscopy images, and we demonstrate how x-ray dispersion and scanning probe methods can provide complementary information that can discriminate between polarity fractions at a material surface and polarity fractions averaged over the film bulk.

  2. Compositionally graded relaxed AlGaN buffers on semipolar GaN for mid-ultraviolet emission

    SciTech Connect (OSTI)

    Young, Erin C.; Wu Feng; Haeger, Daniel A.; Nakamura, Shuji; Denbaars, Steven P.; Cohen, Daniel A.; Speck, James S.; Romanov, Alexey E.

    2012-10-01

    In this Letter, we report on the growth and properties of relaxed, compositionally graded Al{sub x}Ga{sub 1-x}N buffer layers on freestanding semipolar (2021) GaN substrates. Continuous and step compositional grades with Al concentrations up to x = 0.61 have been achieved, with emission wavelengths in the mid-ultraviolet region as low as 265 nm. Coherency stresses were relaxed progressively throughout the grades by misfit dislocation generation via primary (basal) slip and secondary (non-basal) slip systems. Threading dislocation densities in the final layers of the grades were less than 10{sup 6}/cm{sup 2} as confirmed by plan-view transmission electron microscopy and cathodoluminescence studies.

  3. Comprehensive facilities plan

    SciTech Connect (OSTI)

    1997-09-01

    The Ernest Orlando Lawrence Berkeley National Laboratory`s Comprehensive Facilities Plan (CFP) document provides analysis and policy guidance for the effective use and orderly future development of land and capital assets at the Berkeley Lab site. The CFP directly supports Berkeley Lab`s role as a multiprogram national laboratory operated by the University of California (UC) for the Department of Energy (DOE). The CFP is revised annually on Berkeley Lab`s Facilities Planning Website. Major revisions are consistent with DOE policy and review guidance. Facilities planing is motivated by the need to develop facilities for DOE programmatic needs; to maintain, replace and rehabilitate existing obsolete facilities; to identify sites for anticipated programmatic growth; and to establish a planning framework in recognition of site amenities and the surrounding community. The CFP presents a concise expression of the policy for the future physical development of the Laboratory, based upon anticipated operational needs of research programs and the environmental setting. It is a product of the ongoing planning processes and is a dynamic information source.

  4. Berkeley Low Background Facility

    SciTech Connect (OSTI)

    Thomas, K. J.; Norman, E. B.; Smith, A. R.; Poon, A. W. P.; Chan, Y. D.; Lesko, K. T.

    2015-08-17

    The Berkeley Low Background Facility (BLBF) at Lawrence Berkeley National Laboratory (LBNL) in Berkeley, California provides low background gamma spectroscopy services to a wide array of experiments and projects. The analysis of samples takes place within two unique facilities; locally within a carefully-constructed, low background laboratory on the surface at LBNL and at the Sanford Underground Research Facility (SURF) in Lead, SD. These facilities provide a variety of gamma spectroscopy services to low background experiments primarily in the form of passive material screening for primordial radioisotopes (U, Th, K) or common cosmogenic/anthropogenic products; active screening via neutron activation analysis for U,Th, and K as well as a variety of stable isotopes; and neutron flux/beam characterization measurements through the use of monitors. A general overview of the facilities, services, and sensitivities will be presented. Recent activities and upgrades will also be described including an overview of the recently installed counting system at SURF (recently relocated from Oroville, CA in 2014), the installation of a second underground counting station at SURF in 2015, and future plans. The BLBF is open to any users for counting services or collaboration on a wide variety of experiments and projects.

  5. Headquarters Facilities Master Security Plan - Chapter 4, FOCI, Facility

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    Clearances, and Classified Contract Registration | Department of Energy 4, FOCI, Facility Clearances, and Classified Contract Registration Headquarters Facilities Master Security Plan - Chapter 4, FOCI, Facility Clearances, and Classified Contract Registration 2016 Headquarters Facilities Master Security Plan - Chapter 4, FOCI, Facility Clearances, and Classified Contract Registration Before any contract company or its employees is permitted access to U.S. classified information, it must

  6. Facility Representative, Technical Area (TA-55) Plutonium Facility, Los

    National Nuclear Security Administration (NNSA)

    Alamos Site Office | National Nuclear Security Administration | (NNSA) Facility Representative, Technical Area (TA-55) Plutonium Facility, Los Alamos Site Office John Krepps John Krepps June 2010 U.S. Department of Energy Facility Representative of the Year John Krepps, a facility representative for the National Nuclear Security Administration's (NNSA) Los Alamos Site Office, received the Department of Energy's top award for oversight of nuclear and non-nuclear facilities. Krepps, a Los

  7. Carbon doped GaN buffer layer using propane for high electron mobility transistor applications: Growth and device results

    SciTech Connect (OSTI)

    Li, X.; Nilsson, D.; Danielsson, Ö.; Pedersen, H.; Janzén, E.; Forsberg, U.; Bergsten, J.; Rorsman, N.

    2015-12-28

    The creation of a semi insulating (SI) buffer layer in AlGaN/GaN High Electron Mobility Transistor (HEMT) devices is crucial for preventing a current path beneath the two-dimensional electron gas (2DEG). In this investigation, we evaluate the use of a gaseous carbon gas precursor, propane, for creating a SI GaN buffer layer in a HEMT structure. The carbon doped profile, using propane gas, is a two stepped profile with a high carbon doping (1.5 × 10{sup 18 }cm{sup −3}) epitaxial layer closest to the substrate and a lower doped layer (3 × 10{sup 16 }cm{sup −3}) closest to the 2DEG channel. Secondary Ion Mass Spectrometry measurement shows a uniform incorporation versus depth, and no memory effect from carbon doping can be seen. The high carbon doping (1.5 × 10{sup 18 }cm{sup −3}) does not influence the surface morphology, and a roughness root-mean-square value of 0.43 nm is obtained from Atomic Force Microscopy. High resolution X-ray diffraction measurements show very sharp peaks and no structural degradation can be seen related to the heavy carbon doped layer. HEMTs are fabricated and show an extremely low drain induced barrier lowering value of 0.1 mV/V, demonstrating an excellent buffer isolation. The carbon doped GaN buffer layer using propane gas is compared to samples using carbon from the trimethylgallium molecule, showing equally low leakage currents, demonstrating the capability of growing highly resistive buffer layers using a gaseous carbon source.

  8. Environmental Management Disposal Facility overview

    Energy.gov [DOE]

    This fact sheet provides a brief overview for the need behind the Environmental Management Disposal Facility.

  9. ARM - Facility News Article

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    Discover What You Missed at AGU and AMS Bookmark and Share More than 500 people came by the ARM booth to ask questions of ARM Technical Director Jim Mather and the many other ARM Facility staff and researchers who use ARM data who volunteered at the exhibit. More than 500 people came by the ARM booth to ask questions of ARM Technical Director Jim Mather and the many other ARM Facility staff and researchers who use ARM data who volunteered at the exhibit. If you weren't able to attend the 2015

  10. Facility Safeguardability Assessment Report

    National Nuclear Security Administration (NNSA)

    PNNL-21698 Prepared for the U.S. Department of Energy under Contract DE-AC05-76RL01830 Overview of the Facility Safeguardability Analysis (FSA) Process RA Bari SJ Johnson J Hockert R Wigeland EF Wonder MD Zentner August 2012 PNNL- 21698 Overview of the Facility Safeguardability Analysis (FSA) Process RA Bari 1 SJ Johnson 2 J Hockert 3 R Wigeland 4 EF Wonder 5 M.D. Zentner August 2012 Prepared for the U.S. Department of Energy under Contract DE-AC05-76RL01830 1 Brookhaven National Laboratory 2

  11. RCRA facility stabilization initiative

    SciTech Connect (OSTI)

    Not Available

    1995-02-01

    The RCRA Facility Stabilization Initiative was developed as a means of implementing the Corrective Action Program`s management goals recommended by the RIS for stabilizing actual or imminent releases from solid waste management units that threaten human health and the environment. The overall goal of stabilization is to, as situations warrant, control or abate threats to human health and/or the environment from releases at RCRA facilities, and/or to prevent or minimize the further spread of contamination while long-term remedies are pursued. The Stabilization initiative is a management philosophy and should not be confused with stabilization technologies.

  12. Trident Laser Facility

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    Trident Laser Facility Trident Laser Facility Enabling world-class science in high-energy density physics and fundamental laser-matter interactions April 12, 2012 Invisible infrared light from the 200-trillion watt Trident Laser enters from the bottom to interact with a one-micrometer thick foil target in the center of the photo. The laser pulse produces a plasma - an ionized gas - many times hotter than the center of the sun, which lasts for a trillionth of a second. During this time some

  13. Listing of Defense Nuclear Facilities

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    Listing of Defense Nuclear Facilities The facilities listed below are considered DOE defense nuclear facilities for purposes of Section 3161. Kansas City Plant Pinellas Plant Mound Facility Fernald Environmental Management Project Site Pantex Plant Rocky Flats Environmental Technology Site, including the Oxnard Facility Savannah River Site Los Alamos National Laboratory Sandia National Laboratory Lawrence Livermore National Laboratory Oak Ridge National Laboratory Nevada Test Site 1 Y-12 Plant

  14. Effluent Treatment Facility - Hanford Site

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    Effluent Treatment Facility About Us About Hanford Cleanup Hanford History Hanford Site Wide Programs Contact Us 100 Area 118-K-1 Burial Ground 200 Area 222-S Laboratory 242-A Evaporator 300 Area 324 Building 325 Building 400 Area/Fast Flux Test Facility 618-10 and 618-11 Burial Grounds 700 Area B Plant B Reactor C Reactor Canister Storage Building and Interim Storage Area Canyon Facilities Cold Test Facility D and DR Reactors Effluent Treatment Facility Environmental Restoration Disposal

  15. AUTOmatic Message PACKing Facility

    Energy Science and Technology Software Center (OSTI)

    2004-07-01

    AUTOPACK is a library that provides several useful features for programs using the Message Passing Interface (MPI). Features included are: 1. automatic message packing facility 2. management of send and receive requests. 3. management of message buffer memory. 4. determination of the number of anticipated messages from a set of arbitrary sends, and 5. deterministic message delivery for testing purposes.

  16. Concentrating Solar Power Facilities | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    Facilities Concentrating Solar Power Facilities Florida Hawaii Southwest U.S.

  17. Zero lattice mismatch and twin-free single crystalline ScN buffer layers for GaN growth on silicon

    SciTech Connect (OSTI)

    Lupina, L.; Zoellner, M. H.; Dietrich, B.; Capellini, G.; Niermann, T.; Lehmann, M.; Thapa, S. B.; Haeberlen, M.; Storck, P.; Schroeder, T.

    2015-11-16

    We report the growth of thin ScN layers deposited by plasma-assisted molecular beam epitaxy on Sc{sub 2}O{sub 3}/Y{sub 2}O{sub 3}/Si(111) substrates. Using x-ray diffraction, Raman spectroscopy, and transmission electron microscopy, we find that ScN films grown at 600 °C are single crystalline, twin-free with rock-salt crystal structure, and exhibit a direct optical band gap of 2.2 eV. A high degree of crystalline perfection and a very good lattice matching between ScN and GaN (misfit < 0.1%) makes the ScN/Sc{sub 2}O{sub 3}/Y{sub 2}O{sub 3} buffer system a very promising template for the growth of high quality GaN layers on silicon.

  18. Temperature dependent dielectric function and the E{sub 0} critical points of hexagonal GaN from 30 to 690 K

    SciTech Connect (OSTI)

    Kim, Tae Jung Hwang, Soon Yong; Byun, Jun Seok; Barange, Nilesh S.; Park, Han Gyeol; Dong Kim, Young

    2014-02-15

    The complex dielectric function ? and the E{sub 0} excitonic and band-edge critical-point structures of hexagonal GaN are reported for temperatures from 30 to 690 K and energies from 0.74 to 6.42 eV, obtained by rotating-compensator spectroscopic ellipsometry on a 1.9 ?m thick GaN film deposited on a c-plane (0001) sapphire substrate by molecular beam epitaxy. Direct inversion and B-splines in a multilayer-structure calculation were used to extract the optical properties of the film from the measured pseudodielectric function ???. At low temperature sharp E{sub 0} excitonic and critical-point interband transitions are separately observed. Their temperature dependences were determined by fitting the data to the empirical Varshni relation and the phenomenological expression that contains the Bose-Einstein statistical factor.

  19. Structural anisotropic properties of a-plane GaN epilayers grown on r-plane sapphire by molecular beam epitaxy

    SciTech Connect (OSTI)

    Lotsari, A.; Kehagias, Th.; Katsikini, M.; Arvanitidis, J.; Ves, S.; Komninou, Ph.; Dimitrakopulos, G. P.; Tsiakatouras, G.; Tsagaraki, K.; Georgakilas, A.; Christofilos, D.

    2014-06-07

    Heteroepitaxial non-polar III-Nitride layers may exhibit extensive anisotropy in the surface morphology and the epilayer microstructure along distinct in-plane directions. The structural anisotropy, evidenced by the M-shape dependence of the (112{sup }0) x-ray rocking curve widths on the beam azimuth angle, was studied by combining transmission electron microscopy observations, Raman spectroscopy, high resolution x-ray diffraction, and atomic force microscopy in a-plane GaN epilayers grown on r-plane sapphire substrates by plasma-assisted molecular beam epitaxy (PAMBE). The structural anisotropic behavior was attributed quantitatively to the high dislocation densities, particularly the Frank-Shockley partial dislocations that delimit the I{sub 1} intrinsic basal stacking faults, and to the concomitant plastic strain relaxation. On the other hand, isotropic samples exhibited lower dislocation densities and a biaxial residual stress state. For PAMBE growth, the anisotropy was correlated to N-rich (or Ga-poor) conditions on the surface during growth, that result in formation of asymmetric a-plane GaN grains elongated along the c-axis. Such conditions enhance the anisotropy of gallium diffusion on the surface and reduce the GaN nucleation rate.

  20. WIPP Facility Work Plan for Solid Waste Management Units

    SciTech Connect (OSTI)

    Washington TRU Solutions LLC

    2001-02-25

    This 2001 Facility Work Plan (FWP) has been prepared as required by Module VII, Section VII.M.1 of the Waste Isolation Pilot Plant (WIPP) Hazardous Waste Facility Permit, NM4890139088-TSDF (the Permit); (NMED, 1999a), and incorporates comments from the New Mexico Environment Department (NMED) received on December 6, 2000 (NMED, 2000a). This February 2001 FWP describes the programmatic facility-wide approach to future investigations at Solid Waste Management Units (SWMUs) and Areas of Concern (AOCs) specified in the Permit. The permittees are evaluating data from previous investigations of the SWMUs and AOCs against the newest guidance proposed by the NMED. Based on these data, the permittees expect that no further sampling will be required and that a request for No Further Action (NFA) at the SWMUs and AOCs will be submitted to the NMED. This FWP addresses the current Permit requirements. It uses the results of previous investigations performed at WIPP and expands the investigations as required by the Permit. As an alternative to the Resource Conservation and Recovery Act (RCRA) Facility Investigation (RFI) specified in Module VII of the Permit, current NMED guidance identifies an Accelerated Corrective Action Approach (ACAA) that may be used for any SWMU or AOC (NMED, 1998). This accelerated approach is used to replace the standard RFI Work Plan and Report sequence with a more flexible decision-making approach. The ACAA process allows a Facility to exit the schedule of compliance contained in the Facilitys Hazardous and Solid Waste Amendments (HSWA) permit module and proceed on an accelerated time frame. Thus, the ACAA process can be entered either before or after an RFI Work Plan. According to the NMED's guidance, a facility can prepare an RFI Work Plan or Sampling and Analysis Plan (SAP) for any SWMU or AOC (NMED, 1998). Based on this guidance, a SAP constitutes an acceptable alternative to the RFI Work Plan specified in the Permit.

  1. Cold Test Facility - Hanford Site

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    Projects & Facilities Cold Test Facility About Us About Hanford Cleanup Hanford History Hanford Site Wide Programs Contact Us 100 Area 118-K-1 Burial Ground 200 Area 222-S Laboratory 242-A Evaporator 300 Area 324 Building 325 Building 400 Area/Fast Flux Test Facility 618-10 and 618-11 Burial Grounds 700 Area B Plant B Reactor C Reactor Canister Storage Building and Interim Storage Area Canyon Facilities Cold Test Facility D and DR Reactors Effluent Treatment Facility Environmental

  2. MacArthur Waste to Energy Facility Biomass Facility | Open Energy...

    Open Energy Information (Open El) [EERE & EIA]

    MacArthur Waste to Energy Facility Biomass Facility Jump to: navigation, search Name MacArthur Waste to Energy Facility Biomass Facility Facility MacArthur Waste to Energy Facility...

  3. ARM Climate Research Facility Data Management Facility Quarterly...

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    U.S. Government or any agency thereof. DOESC-ARM-15-023 ARM Climate Research Facility Data Management Facility Quarterly Report Second Quarter: January 1 to March 31, 2015 NN...

  4. Facility effluent monitoring plan for the 3720 facility

    SciTech Connect (OSTI)

    Ballinger, M.Y.

    1994-11-01

    This report describes the effluent monitoring plan for the 3720 facility. Airborne and liquid effluents are monitored.

  5. CMI Unique Facility: Filtration Test Facility | Critical Materials

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    Institute Filtration Test Facility filtration set up for CMI unique facility at Idaho National Laboratory The Filtration Test Facility is one of more than a dozen unique facilities developed by the Critical Materials Institute, an Energy Innovation Hub of the U.S. Department of Energy. The chemical separation of materials is often water-intensive. It is important to establish filtration methods that are both efficient and environmentally sound. Mineral processing streams are particularly

  6. ARM - Facility News Article

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    October 11, 2011 [Facility News] Final Recovery Act Milestone Complete! Bookmark and Share To support all the new instruments from the Recovery Act, infrastructure upgrades ranging from power and platforms to communications and data systems required a focused team effort. To support all the new instruments from the Recovery Act, infrastructure upgrades ranging from power and platforms to communications and data systems required a focused team effort. For the past year and a half, ARM scientists,

  7. ARM - Facility News Article

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    September 30, 2010 [Facility News] Measurements of Total Surface Energy Now Available from Australia Bookmark and Share As shown in this photo at the wharf in Darwin, Australia, the new ECOR/SEBS station includes solar panels for power. As shown in this photo at the wharf in Darwin, Australia, the new ECOR/SEBS station includes solar panels for power. Measurements of sensible, latent, and carbon dioxide fluxes are valuable for refining both regional and global climate models. Since 1997, only

  8. ARM - Facility News Article

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    Intensive Arctic Field Campaign Concludes Bookmark and Share The Citation aircraft-equipped with a standard set of microphysical measurement systems and an ice nucleation counter-completed 13 flights during M-PACE, collecting in situ measurement data. The Mixed-Phase Arctic Cloud Experiment (M-PACE), the largest and most ambitious field campaign conducted thus far at the ARM Climate Research Facility North Slope of Alaska locale, concluded on October 23, after almost a month of concentrated

  9. ARM - Facility News Article

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    January 20, 2011 [Facility News] Fond Farewell to Bernie Zak Bookmark and Share A fond farewell to Bernie Zak, Senior Scientist, Sandia National Laboratories, who retired on December 23, 2010. Bernie began his work with ARM in 1991 at the North Slope of Alaska (NSA) site in its early planning phases. As the site manager, he oversaw the development and operations of the site, was influential among climate scientists, and provided tours of the Barrow site to students as part of the

  10. ARM - Facility News Article

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    January 21, 2011 [Facility News] Call for Proposals: SERDP Bookmark and Share The Strategic Environmental Research and Development Program (SERDP) is currently accepting proposals for both Core and SERDP Exploratory Development (SEED) FY 2012 solicitations. The Core Solicitation seeks proposals for basic and applied research and advanced technology development. Core projects vary in cost and duration. SEED proposals explore innovative approaches and require high technical risk or supporting data

  11. ARM - Facility News Article

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    February 28, 2009 [Facility News] Climate Models Need Closure Too Bookmark and Share These radiometers at the Southern Great Plains site match those on the aircraft for the RACORO field campaign. The radiometers will take measurements continuously throughout the campaign, allowing scientists to compare measurements from the aircraft against those collected routinely by radiometers at the site. These radiometers at the Southern Great Plains site match those on the aircraft for the RACORO field

  12. ARM - Facility News Article

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    23, 2007 [Facility News] BAMS Features Three ARM Research Papers in February Bookmark and Share Image of the February 2007 BAMS cover In a tropospheric trifecta, three ARM research papers were featured in the February 2007 issue of the Bulletin of the American Meteorological Society, or BAMS. Two of the articles-Turner et. al., and Comstock et. al.,-cover studies of retrieval algorithms used to characterize the microphysical properties of thin liquid water clouds and upper tropospheric ice

  13. ARM - Facility News Article

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    April 23, 2007 [Data Announcements, Facility News] Arctic Surface Radiation Data Now Available at the ARM Data Archive Bookmark and Share Researchers lead by principal investigator Ellsworth Dutton used more than 30 years of surface irradiance data obtained from Barrow, Alaska, in a study of temporal and spatial variations (Dutton et al., 2006). The high temporal resolution (1 to 3 minute averages) data and the quality assured hourly averages are now available from the ARM Data Archive. See

  14. ARM - Facility News Article

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    31, 2009 [Facility News] Scanning Radiometers Probe Inside of Clouds Bookmark and Share For one month, three of these microwave radiometers at the SGP site, along with two more from the University of Colorado, will be arranged in series to continuously scan clouds passing overhead. For one month, three of these microwave radiometers at the SGP site, along with two more from the University of Colorado, will be arranged in series to continuously scan clouds passing overhead. A key contributor

  15. ARM - Facility News Article

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    May 12, 2015 [Facility News] 2015 William T. Pecora Award Nominations Bookmark and Share William T. Pecora William T. Pecora Nominations for the 2015 William T. Pecora Award are currently being accepted through June 15. This award is presented annually to individuals or groups that have made outstanding contributions toward understanding the Earth using remote sensing. Individuals from public and private sector, teams, organizations, and professional societies are eligible. Both national and

  16. ARM - Facility News Article

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    8, 2016 [Facility News] Workshop Features ARM Data Bookmark and Share giri_blog In November 2015, the First Workshop on Data Science, held in São Paulo, Brazil, was attended by 65 scientific experts to discuss national and international initiatives for data science that contribute to solving challenges in the context of open data science in Brazil. During the 2-day conference, Giri Palanisamy, ARM Data Services and Strategy Team Manager at Oak Ridge National Laboratory, hosted a training course

  17. ARM - Facility News Article

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    5, 2016 [Facility News] New Funding Opportunity Announced Bookmark and Share Simulations like this one will be used by the newly launched DOE Accelerated Climate Modeling for Energy (ACME) project to advance three climate science drivers and corresponding questions in water cycle, biogeochemistry, and cryosphere-ocean system. Simulations like this one will be used by the newly launched DOE Accelerated Climate Modeling for Energy (ACME) project to advance three climate science drivers and

  18. ARM - Facility News Article

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    9, 2016 [Facility News] Manvendra Dubey Awarded Los Alamos Fellows Prize Bookmark and Share Dr. Manvendra Dubey, Los Alamos National Laboratory Dr. Manvendra Dubey, Los Alamos National Laboratory Manvendra Dubey recently received the Los Alamos National Laboratory 2015 Fellows Prize for Outstanding Research for his achievements in the fields of leadership and science in the global climate community. Dubey's research has created a confluence of field observations, laboratory measurements, and

  19. ARM - Facility News Article

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    7, 2016 [Facility News] Atmospheric Modeling Advisory Group Assembled Bookmark and Share ARM recently formed the Atmospheric Modeling Advisory Group to represent research community interests and provide feedback to the LES ARM Symbiotic Simulation and Observation Workflow (LASSO) modeling project. This group consists of six scientists, spanning the range of specialties that will benefit from LASSO, plus ARM Technical Director, Jim Mather; LASSO principal investigator, William Gustafson; and

  20. ARM - Facility News Article

    U.S. Department of Energy (DOE) all webpages (Extended Search)

    3, 2016 [Facility News] Nature Geoscience Article: Raindrops Disperse Climate-Critical Organic Particles Bookmark and Share ARM site plays a role in a novel finding on rain events and airborne carbonaceous particles Embedded in a 160-acre spread of remote farmland, the Southern Great Plains site played host to a scientific discovery that could alter the way scientists look at rain's effect on climate. Embedded in a 160-acre spread of remote farmland, the Southern Great Plains site played host to