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Sample records for atlanta ga georgia

  1. Atlanta, Georgia: Energy Resources | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    Solarity Sustainable World Capital TCE Energy Corporation Waspa Wheego Electric Cars Energy Incentives for Atlanta, Georgia City of Atlanta - Sustainable Home Initiative in...

  2. Registration Open for National Environmental Justice Advisory Council (NEJAC) Public Meeting, September 11-12, 2013, Atlanta, Georgia

    Energy.gov [DOE]

    Registration Open for National Environmental Justice Advisory Council (NEJAC) Public Meeting, September 11-12, 2013, Atlanta, Georgia.

  3. Georgia and Arkansas Residential Energy Code Field Studies | Department of

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    Energy Georgia and Arkansas Residential Energy Code Field Studies Georgia and Arkansas Residential Energy Code Field Studies Lead Performer: Southeast Energy Efficiency Alliance - Atlanta, GA Partners: - Advanced Energy - Raleigh, NC - Arkansas Economic Development Commission, Energy Office - Little Rock, AR - Georgia Department of Community Affairs - Atlanta, GA - Georgia Environmental Finance Authority - Atlanta, GA - Southface - Atlanta, GA DOE Total Funding: $1,399,999 Cost Share:

  4. Remarks by Federal Blue Ribbon Commission J. David Jameson Atlanta, GA

    U.S. Department of Energy (DOE) - all webpages (Extended Search)

    Federal Blue Ribbon Commission J. David Jameson Atlanta, GA October 18, 2011 Good Morning. I am David Jameson. I am President and CEO of the Greater Aiken, South Carolina, Chamber of Commerce. I am here today in my capacity as current Chairman of the SRS Community Reuse Organization. The SRSCRO is a non-profit regional group supporting economic diversification and job creation in a five-county in Georgia and South Carolina near the Department of Energy's Savannah River Site. We are unique among

  5. Summary of Needs and Opportunities from the 2011 Residential Energy Efficiency Stakeholders Meeting: Atlanta, Georgia -- March 16-18, 2011

    SciTech Connect

    Not Available

    2011-05-01

    This summary report outlines needs and issues for increasing energy efficiency of new and existing U.S homes, as identified at the U.S Department of Energy Building America program Spring 2011 stakeholder meeting in Atlanta, Georgia.

  6. Workplace Charging Challenge Partner: Georgia Institute of Technology |

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    Department of Energy Georgia Institute of Technology Workplace Charging Challenge Partner: Georgia Institute of Technology Workplace Charging Challenge Partner: Georgia Institute of Technology Joined the Challenge: February 2014 Headquarters: Atlanta, GA Charging Location: Atlanta, GA Domestic Employees: 6,490 Georgia Institute of Technology is a leader in innovation and is committed to practicing sustainability. Georgia Tech's Parking and Transportation Services office is renowned for its

  7. Atlanta Chemical Engineering LLC | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    Atlanta Chemical Engineering LLC Jump to: navigation, search Logo: Atlanta Chemical Engineering LLC Name: Atlanta Chemical Engineering LLC Place: Marietta, Georgia Country: United...

  8. fe0013961-GaTech | netl.doe.gov

    U.S. Department of Energy (DOE) - all webpages (Extended Search)

    Performer Georgia Tech Research Corporation, Atlanta GA 30332 Background While earlier research focused on the properties of the hydrate mass per se (Sloan Jr and Koh 2007), ...

  9. Atlanta Community Leaders’ Institute Conference

    Energy.gov [DOE]

    The Atlanta Community Leaders Institute (CLI) held a conference on February 8 and 9 at Morehouse School of Medicine, in Atlanta, Georgia.

  10. Summary of Needs and Opportunities from the 2011 Residential Energy Efficiency Stakeholders Meeting: Atlanta, Georgia -- March 16-18, 2011

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    Needs and Opportunities from the 2011 Residential Energy Efficiency Stakeholders Meeting Atlanta, Georgia - March 16-18, 2011 May 2011 ii NOTICE This report was prepared as an account of work sponsored by an agency of the United States government. Neither the United States government nor any agency thereof, nor any of their employees, makes any warranty, express or implied, or assumes any legal liability or responsibility for the accuracy, completeness, or usefulness of any information,

  11. Secretary Moniz's Keynote at the Sam Nunn Policy Forum in Atlanta, GA --

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    As Delivered | Department of Energy Keynote at the Sam Nunn Policy Forum in Atlanta, GA -- As Delivered Secretary Moniz's Keynote at the Sam Nunn Policy Forum in Atlanta, GA -- As Delivered April 16, 2014 - 11:35am Addthis Dr. Ernest Moniz Dr. Ernest Moniz Secretary of Energy Well, thank you. Professor Bankoff, Provost Bras, I'll also acknowledge the Bank of America support of this symposium and also my monthly support of the Bank of America which is quite considerable with those credit

  12. HIA 2015 DOE Zero Energy Ready Home Case Study: Heirloom Design Build, Euclid Avenue, Atlanta, GA

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    Heirloom Design Build Euclid Avenue Atlanta, GA DOE ZERO ENERGY READY HOME(tm) The U.S. Department of Energy invites home builders across the country to meet the extraordinary levels of excellence and quality specified in DOE's Zero Energy Ready Home program (formerly known as Challenge Home). Every DOE Zero Energy Ready Home starts with ENERGY STAR Certified Homes Version 3.0 for an energy-efficient home built on a solid foundation of building science research. Advanced technologies are

  13. USD E'16 ATLANTA

    U.S. Department of Energy (DOE) - all webpages (Extended Search)

    REGISTER NOW 15th Annual DOE Small Business Forum & Expo MAY 23 - 25, 2016 Atlanta Marriott Marquis 265 Peachtree Center Avenue Atlanta, GA 30303 Government per diem 135.00night ...

  14. Georgia/Incentives | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    Local Loan Program Yes Atlanta Gas Light - Energy Efficiency Incentive Program (Georgia) Utility Rebate Program No Biomass Sales and Use Tax Exemption (Georgia) Sales Tax...

  15. Marietta, Georgia: Energy Resources | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    Act Smart Grid Projects in Marietta, Georgia Cobb Electric Membership Corporation Smart Grid Project Registered Energy Companies in Marietta, Georgia Atlanta Chemical...

  16. Atlanta Central UESC Pilot Project

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    Atlanta Central UESC Pilot Project Elbert P. Tuttle United States Court of Appeals - Atlanta, GA Lewis R. Morgan Federal Building and Courthouse - Newnan, GA Rome Federal Building Post Office, Courthouse - Rome, GA FUPWG Presentation 11/3/15 Strategic Goals * The plan aligns with "Executive Order Goals" (EPACT / EO 13423 / EO 13693) and will address ways to spotlight and market energy initiatives to all stakeholders of GSA * Incorporates all Regional SBA goals into the subcontracting

  17. Consent-Based Siting Public Meeting in Atlanta (April 11, 2016) |

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    Department of Energy Consent-Based Siting Public Meeting in Atlanta (April 11, 2016) Consent-Based Siting Public Meeting in Atlanta (April 11, 2016) Consent-Based Siting Public Meeting in Atlanta Meeting Summary Consent-based siting public meeting in Atlanta. On April 11, 2016, the Department of Energy's consent-based siting initiative hosted a public meeting in Atlanta, Georgia at the Georgia Institute of Technology's Conference Center. The purpose of this meeting was to hear from the

  18. Consent-Based Siting Public Meeting in Atlanta (April 11, 2016) |

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    Department of Energy Atlanta (April 11, 2016) Consent-Based Siting Public Meeting in Atlanta (April 11, 2016) Consent-Based Siting Public Meeting in Atlanta Meeting Summary Consent-based siting public meeting in Atlanta. On April 11, 2016, the Department of Energy's consent-based siting initiative hosted a public meeting in Atlanta, Georgia at the Georgia Institute of Technology's Conference Center. The purpose of this meeting was to hear from the public and stakeholders on important

  19. Advancing Residential Retrofits in Atlanta

    SciTech Connect

    Jackson, Roderick K; Kim, Eyu-Jin; Roberts, Sydney; Stephenson, Robert

    2012-07-01

    This report will summarize the home energy improvements performed in the Atlanta, GA area. In total, nine homes were retrofitted with eight of the homes having predicted source energy savings of approximately 30% or greater based on simulated energy consumption.

  20. Atlanta TEC Meeting -- Tribal Group Summary 3-6-07

    Office of Environmental Management (EM)

    Atlanta, GA - January 31, 2007 Session Chaired by: Jay Jones (DOE, Office of Civilian Radioactive Waste Management, OCRWM) Regular Members in Attendance: Kenny Anderson (Las Vegas ...

  1. Georgia - Compare - U.S. Energy Information Administration (EIA)

    Energy Information Administration (EIA) (indexed site)

    Georgia Georgia

  2. Georgia - Rankings - U.S. Energy Information Administration (EIA)

    Energy Information Administration (EIA) (indexed site)

    Georgia Georgia

  3. Georgia - Search - U.S. Energy Information Administration (EIA)

    Energy Information Administration (EIA) (indexed site)

    Georgia Georgia

  4. Georgia's 6th congressional district: Energy Resources | Open...

    OpenEI (Open Energy Information) [EERE & EIA]

    Grid Project Registered Energy Companies in Georgia's 6th congressional district Atlanta Chemical Engineering LLC Cellnet Legacy Environmental Solutions Prenova Inc formerly...

  5. Georgia's 11th congressional district: Energy Resources | Open...

    OpenEI (Open Energy Information) [EERE & EIA]

    Grid Project Registered Energy Companies in Georgia's 11th congressional district Atlanta Chemical Engineering LLC Prenova Inc formerly Service Resources Inc Sriya Innovations Inc...

  6. Georgia's 13th congressional district: Energy Resources | Open...

    OpenEI (Open Energy Information) [EERE & EIA]

    Grid Project Registered Energy Companies in Georgia's 13th congressional district Atlanta Chemical Engineering LLC Prenova Inc formerly Service Resources Inc Sriya Innovations Inc...

  7. Cobb County, Georgia: Energy Resources | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    Smart Grid Project Registered Energy Companies in Cobb County, Georgia Atlanta Chemical Engineering LLC H I Solutions Inc Prenova Inc formerly Service Resources Inc...

  8. Clean Cities: Clean Cities-Georgia

    U.S. Department of Energy (DOE) - all webpages (Extended Search)

    Atlanta was designated as the first Clean Cities coalition in the nation at the Georgia Dome in 1993. Prior to being elected as the coalition's executive director, Francis served...

  9. WNRC diverting to Atlanta FRC | Department of Energy

    Energy.gov [DOE] (indexed site)

    NOTICE - NARA Diversion Prgm re WNRC Transfers Routed to FRC-Atlanta, GA.pdf More Documents & Publications Denver FRC diverting to Kingsridge FRC (Dayton, OH) POINT OF CONTACT...

  10. 2009 National Electric Transmission Congestion Study- Atlanta Workshop

    Energy.gov [DOE]

    On July 29, 2008, DOE hosted a regional pre-study workshop in Atlanta, GA to receive input and suggestions concerning the 2009 National Electric Transmission Congestion Study. The agenda and full...

  11. Atlanta, Georgia: Energy Resources | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    Global Energy Holdings Group formerly Xethanol Corporation Navajo Wind Energy Plum Combustion Radiance Solar Servidyne SilvaGas Corporation FERCO Enterprises Inc Solar Systems...

  12. CONSENT-BASED SITING PUBLIC MEETING Georgia Tech Hotel and Conference Center

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    Georgia Tech Hotel and Conference Center 800 Spring Street N.W. Atlanta, GA 30308 April 11, 2016 FULL TRANSCRIPT Mr. Jim Hamilton. Good afternoon, and to those in earlier time zones via webinar, good morning. Welcome, and thank you all for being here today. My name is Jim Hamilton. I'm an advisor to the Department of Energy's Consent-Based Siting Team, and my role today is to help us all have an open and productive conversation. To start off we have a few housekeeping issues to go over, and I'll

  13. Dalton, Georgia: Energy Resources | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    Georgia: Energy Resources (Redirected from Dalton, GA) Jump to: navigation, search Equivalent URI DBpedia Coordinates 34.7698021, -84.9702228 Show Map Loading map......

  14. Southface Energy Institute: Advanced Commercial Buildings Initiative |

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    Department of Energy Southface Energy Institute: Advanced Commercial Buildings Initiative Southface Energy Institute: Advanced Commercial Buildings Initiative Southface Energy Institute: Advanced Commercial Buildings Initiative Lead Performer: Southface Energy Institute - Atlanta, GA Partners: - City of Atlanta - Atlanta, GA - Georgia Institute of Technology - Atlanta, GA - Kendeda Fund - Atlanta, GA - Oak Ridge National Laboratory - Oak Ridge, TN - Acuity Brands Lighting - Atlanta, GA -

  15. Categorical Exclusion Determinations: Georgia | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    Georgia Categorical Exclusion Determinations: Georgia Location Categorical Exclusion Determinations issued for actions in Georgia. DOCUMENTS AVAILABLE FOR DOWNLOAD May 2, 2016 CX-100596 Categorical Exclusion Determination Energy Savings Performance Contract (ESPC) at Marine Corps Logistics Base Albany (MCLBA), GA - Biomass Steam Turbine Generator Award Number: DE-EE0007461 CX(s) Applied: A9 Federal Energy Management Program Date: 04/13/2016 Location(s): GA Office(s): Golden Field Office March 4,

  16. Making Connections for Atlanta Students

    Energy.gov [DOE]

    The Atlanta Students in Energy and Climate Forum, held in April 2013, brought together entrepreneurs, and professors to share experiences and motivations in their pursuit of environmental stewardship.

  17. In Savannah, Georgia, Even the Data is Green | Department of...

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    In Savannah, Georgia, Even the Data is Green In Savannah, Georgia, Even the Data is Green May 5, 2011 - 4:49pm Addthis The new energy efficient IT Data Center in Savannah, GA. | ...

  18. Georgia Power Company (GPC), Oglethorpe Power Corporation (OPC), Municipal

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    Electric Authority of Georgia (MEAG) | Department of Energy Georgia Power Company (GPC), Oglethorpe Power Corporation (OPC), Municipal Electric Authority of Georgia (MEAG) Georgia Power Company (GPC), Oglethorpe Power Corporation (OPC), Municipal Electric Authority of Georgia (MEAG) Location: Waynesboro, GA Eligibility: 1703 Snapshot In February 2014, the Department of Energy issued $6.5 billion in loan guarantees to support the construction of the nation's next generation of advanced

  19. Newton County, Georgia: Energy Resources | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    in Newton County, Georgia Covington, Georgia Mansfield, Georgia Newborn, Georgia Oxford, Georgia Porterdale, Georgia Social Circle, Georgia Retrieved from "http:...

  20. Archive Reference Buildings by Climate Zone: 3A Atlanta, Georgia...

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    More Documents & Publications Archive Reference Buildings by Climate Zone: 3B Los Angeles, California Archive Reference Buildings by Climate Zone: 3B Las Vegas, Nevada Archive ...

  1. QER SECOND INSTALLMENT PUBLIC MEETING-ATLANTA, GEORGIA | Department...

    Energy.gov [DOE] (indexed site)

    ... (hereinafter referred to as Confidential Business Information (CBI)). Comments submitted through the DOE Web site cannot be claimed as CBI. Confidential Business Information: ...

  2. Archived Reference Climate Zone: 3A Atlanta, Georgia

    Energy.gov [DOE]

    Here you will find past versions of the commercial reference building models for existing buildings constructed before 1980, organized by building type and location. A summary ofbuilding types and climate zones is available for reference. Current versions are also available.

  3. Archived Reference Climate Zone: 3A Atlanta, Georgia

    Energy.gov [DOE]

    Here you will find past versions of the commercial reference building models for existing buildings constructed in or after 1980, organized by building type and location. A summary of building types and climate zones is available for reference. Current versions are also available.

  4. Chatham County, Georgia: Energy Resources | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    County, Georgia Bloomingdale, Georgia Garden City, Georgia Georgetown, Georgia Isle of Hope, Georgia Montgomery, Georgia Pooler, Georgia Port Wentworth, Georgia Savannah, Georgia...

  5. Understanding cirrus ice crystal number variability for different...

    Office of Scientific and Technical Information (OSTI)

    Georgia Inst. of Technology, Atlanta, GA (United States) Univ. of Los Andes, Bogota (Colombia) NASA Goddard Space Flight Center (GSFC), Greenbelt, MD (United States) Georgia Inst. ...

  6. Liberty County, Georgia: Energy Resources | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    A. Places in Liberty County, Georgia Allenhurst, Georgia Flemington, Georgia Fort Stewart, Georgia Gumbranch, Georgia Hinesville, Georgia Midway, Georgia Riceboro, Georgia...

  7. Alternative Fuels Data Center: Atlanta Airport Converts Shuttles...

    Alternative Fuels and Advanced Vehicles Data Center

    Atlanta Airport Converts Shuttles to CNG Learn how an Atlanta company saves money and conserves fuel with compressed natural gas airport shuttles. For information about this ...

  8. Georgia State Historic Preservation Programmatic Agreement | Department of

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    Energy Georgia State Historic Preservation Programmatic Agreement Georgia State Historic Preservation Programmatic Agreement Fully executed programmatic agreement between DOE, State Energy Office and State Historic Preservation Office. state_historic_preservation_programmatic_agreement_ga.pdf (1.06 MB) More Documents & Publications Arizona State Historic Preservation Programmatic Agreement Delaware State Historic Preservation Programmatic Agreement Florida State Historic Preservation

  9. City of Hampton, Georgia (Utility Company) | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    search Name: City of Hampton Place: Georgia Website: www.cityofhampton-ga.govservi Outage Hotline: 770-946-4306; after hours- 911 References: EIA Form EIA-861 Final Data...

  10. City of La Grange, Georgia (Utility Company) | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    to: navigation, search Name: City of La Grange Place: Georgia Phone Number: 706-883-2030 Website: www.lagrange-ga.orgUtilities. Outage Hotline: 706-883-2130 References: EIA...

  11. Walton County, Georgia: Energy Resources | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    Number 3 Climate Zone Subtype A. Places in Walton County, Georgia Between, Georgia Good Hope, Georgia Jersey, Georgia Loganville, Georgia Monroe, Georgia Social Circle, Georgia...

  12. Madison County, Georgia: Energy Resources | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    Number 3 Climate Zone Subtype A. Places in Madison County, Georgia Carlton, Georgia Colbert, Georgia Comer, Georgia Danielsville, Georgia Hull, Georgia Ila, Georgia Royston,...

  13. Rabun County, Georgia: Energy Resources | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    Places in Rabun County, Georgia Clayton, Georgia Dillard, Georgia Mountain City, Georgia Sky Valley, Georgia Tallulah Falls, Georgia Tiger, Georgia Retrieved from "http:...

  14. Cherokee County, Georgia: Energy Resources | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    Ball Ground, Georgia Canton, Georgia Holly Springs, Georgia Mountain Park, Georgia Nelson, Georgia Waleska, Georgia Woodstock, Georgia Retrieved from "http:en.openei.orgw...

  15. Gwinnett County, Georgia: Energy Resources | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    BJ Gas Recovery Biomass Facility Places in Gwinnett County, Georgia Auburn, Georgia Berkeley Lake, Georgia Braselton, Georgia Buford, Georgia Dacula, Georgia Duluth, Georgia...

  16. Agenda CBS Public Meeting-Atlanta

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    Elliott, Ph.D., Associate Director Georgia Institute of Technology's Center for Quality Growth and Regional Development CONSENT- BASED SITING CONSENT-BASED SITING PUBLIC MEETING ...

  17. Hart County, Georgia: Energy Resources | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    Number 3 Climate Zone Subtype A. Places in Hart County, Georgia Bowersville, Georgia Canon, Georgia Hartwell, Georgia Reed Creek, Georgia Royston, Georgia Retrieved from "http:...

  18. Houston County, Georgia: Energy Resources | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    County, Georgia Byron, Georgia Centerville, Georgia Perry, Georgia Robins AFB, Georgia Warner Robins, Georgia Retrieved from "http:en.openei.orgwindex.php?titleHoustonCounty,...

  19. Meriwether County, Georgia: Energy Resources | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    Climate Zone Number 3 Climate Zone Subtype A. Places in Meriwether County, Georgia Gay, Georgia Greenville, Georgia Haralson, Georgia Lone Oak, Georgia Luthersville, Georgia...

  20. Harris County, Georgia: Energy Resources | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    Harris County, Georgia Hamilton, Georgia Pine Mountain, Georgia Shiloh, Georgia Waverly Hall, Georgia West Point, Georgia Retrieved from "http:en.openei.orgw...

  1. Clark Atlanta Universities (CAU) Energy Related Research Capabilities |

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    Department of Energy Clark Atlanta Universities (CAU) Energy Related Research Capabilities Clark Atlanta Universities (CAU) Energy Related Research Capabilities How energy related research has helped Clark Atlanta University. Clark Atlanta Universities (CAU) Energy Related Research Capabilities (1.62 MB) More Documents & Publications 2008-2009 Winter Fuels Outlook Conference Ronald Reagan Building and International Trade Center HYDROGEN AND FUEL CELL EDUCATION AT CALIFORNIA STATE

  2. Middle Georgia Biofuels | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    Georgia Biofuels Jump to: navigation, search Name: Middle Georgia Biofuels Place: East Dublin, Georgia Zip: 31027 Product: Georgia-based biodiesel producer. References: Middle...

  3. GA-AL-SC | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    GA-AL-SC GA-AL-SC October 1, 2012 ALA-1-N Wholesale Power Rate Schedule Area: PowerSouth Energy Cooperative System: Georgia-Alabama-South Carolina October 1, 2012 Duke-1-E Wholesale Power Rate Schedule Area: Duke On-System System: Georgia-Alabama-South Carolina October 1, 2012 Duke-2-E Wholesale Power Rate Schedule Area: Central System: Georgia-Alabama-South Carolina October 1, 2012 Duke-3-E Wholesale Power Rate Schedule Area: None System: Georgia-Alabama-South Carolina October 1, 2012 Duke-4-E

  4. City of Atlanta Video (Text Version) | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    City of Atlanta Video (Text Version) City of Atlanta Video (Text Version) Aaron Bastian: According to the U.S. EPA, Atlanta is one of the top ten cities in the country for green buildings. It is a city that is walk and bike friendly, and now Atlanta is second in the country for the sale of electric vehicles. Atlanta has seen tremendous adoption of plug-in electric vehicles amongst her residents, but to truly meet driver demand, chargers must be both accessible and available at major destinations

  5. Secretary Bodman Touts Importance of Cellulosic Ethanol at Georgia

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    Biorefinery Groundbreaking | Department of Energy Touts Importance of Cellulosic Ethanol at Georgia Biorefinery Groundbreaking Secretary Bodman Touts Importance of Cellulosic Ethanol at Georgia Biorefinery Groundbreaking October 6, 2007 - 4:21pm Addthis SOPERTON, GA - U.S. Secretary of Energy Samuel W. Bodman today attended a groundbreaking ceremony for Range Fuels' biorefinery - one of the nation's first commercial-scale cellulosic ethanol biorefineries - and made the following statement.

  6. Agenda CBS Public Meeting-Atlanta

    Energy.gov [DOE] (indexed site)

    ... Sonny was born on December 20, 1946, in Perry, Georgia, to a lifelong farmer and a classroom teacher. He graduated from Warner Robins High School and earned a doctorate in ...

  7. OPTIMIZED MULTI-FREQUENCY SPECTRA FOR APPLICATIONS IN RADIATIVE...

    Office of Scientific and Technical Information (OSTI)

    School of Physics, Georgia Institute of Technology, Atlanta, GA 30332 (United States) ... CALCULATIONS; RADIANT HEAT TRANSFER; STAR ACCRETION; STAR MODELS; STARS; ...

  8. NETL F 451.1/1-1, Categorical Exclusion Designation Form

    U.S. Department of Energy (DOE) - all webpages (Extended Search)

    163 Praxair, Inc. Tonawanda, WV Georgia Institute of Technology, 505 10th Street, NW, Atlanta, GA 30332 FESCCAESD Kenneth David Lyons Improving Energy Efficiency of Air...

  9. DE-FE0009897 | netl.doe.gov

    U.S. Department of Energy (DOE) - all webpages (Extended Search)

    Performer Georgia Tech Research Corporation, Atlanta GA Background Fine-grained sediments host more than 90 percent of global gas hydrate accumulation. Yet hydrate formation in ...

  10. fe0013889-TEES | netl.doe.gov

    U.S. Department of Energy (DOE) - all webpages (Extended Search)

    Performers Texas A&M University, College Station, TX Georgia Tech Research Corporation, Atlanta GA Background The experimental study of hydrate-bearing sediments has been hindered ...

  11. Upcoming Funding Opportunity for Water Power Manufacturing | Department of

    Energy Saver

    Summit on July 9 in Atlanta, GA | Department of Energy Upcoming Clean Energy Manufacturing Initiative (CEMI) Southeast Regional Summit on July 9 in Atlanta, GA Upcoming Clean Energy Manufacturing Initiative (CEMI) Southeast Regional Summit on July 9 in Atlanta, GA June 25, 2015 - 8:19am Addthis On July 9, the U.S. Department of Energy will be holding the Clean Energy Manufacturing Initiative (CEMI) Southeast Regional Summit at the Renaissance Atlanta Midtown Hotel in Atlanta, Georgia. The

  12. Upcoming Clean Energy Manufacturing Initiative (CEMI) Southeast Regional

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    Summit on July 9 in Atlanta, GA | Department of Energy Clean Energy Manufacturing Initiative (CEMI) Southeast Regional Summit on July 9 in Atlanta, GA Upcoming Clean Energy Manufacturing Initiative (CEMI) Southeast Regional Summit on July 9 in Atlanta, GA June 25, 2015 - 8:19am Addthis On July 9, the U.S. Department of Energy will be holding the Clean Energy Manufacturing Initiative (CEMI) Southeast Regional Summit at the Renaissance Atlanta Midtown Hotel in Atlanta, Georgia. The Summit will

  13. Franklin County, Georgia: Energy Resources | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    Climate Zone Number 4 Climate Zone Subtype A. Places in Franklin County, Georgia Canon, Georgia Carnesville, Georgia Franklin Springs, Georgia Gumlog, Georgia Lavonia,...

  14. Appling County, Georgia: Energy Resources | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    Georgia Appling County Pellets Places in Appling County, Georgia Baxley, Georgia Graham, Georgia Surrency, Georgia Retrieved from "http:en.openei.orgw...

  15. Upson County, Georgia: Energy Resources | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    Climate Zone Number 3 Climate Zone Subtype A. Places in Upson County, Georgia Hannahs Mill, Georgia Lincoln Park, Georgia Salem, Georgia Sunset Village, Georgia Thomaston,...

  16. Peach County, Georgia: Energy Resources | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    A. Places in Peach County, Georgia Byron, Georgia Fort Valley, Georgia Perry, Georgia Warner Robins, Georgia Retrieved from "http:en.openei.orgwindex.php?titlePeachCounty,G...

  17. Columbia County, Georgia: Energy Resources | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    Places in Columbia County, Georgia Evans, Georgia Grovetown, Georgia Harlem, Georgia Martinez, Georgia Retrieved from "http:en.openei.orgwindex.php?titleColumbiaCounty,Geor...

  18. Oconee County, Georgia: Energy Resources | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    Climate Zone Number 3 Climate Zone Subtype A. Places in Oconee County, Georgia Bishop, Georgia Bogart, Georgia North High Shoals, Georgia Watkinsville, Georgia Retrieved...

  19. Terrell County, Georgia: Energy Resources | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    Number 3 Climate Zone Subtype A. Places in Terrell County, Georgia Bronwood, Georgia Dawson, Georgia Parrott, Georgia Sasser, Georgia Retrieved from "http:en.openei.orgw...

  20. BRMF Georgia Mountain Biofuels | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    BRMF Georgia Mountain Biofuels Jump to: navigation, search Name: BRMFGeorgia Mountain Biofuels Place: Clayton, Georgia Product: Biodiesel plant developer in Georgia. References:...

  1. Effingham County, Georgia: Energy Resources | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    Climate Zone Number 2 Climate Zone Subtype A. Places in Effingham County, Georgia Guyton, Georgia Rincon, Georgia Springfield, Georgia Retrieved from "http:en.openei.orgw...

  2. Glascock County, Georgia: Energy Resources | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    Zone Subtype A. Places in Glascock County, Georgia Edge Hill, Georgia Gibson, Georgia Mitchell, Georgia Retrieved from "http:en.openei.orgwindex.php?titleGlascockCounty,Geor...

  3. Jones County, Georgia: Energy Resources | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    in Jones County, Georgia Alterra Bioenergy LLC Places in Jones County, Georgia Gray, Georgia Macon, Georgia Retrieved from "http:en.openei.orgwindex.php?titleJonesCo...

  4. Butts County, Georgia: Energy Resources | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    Number 3 Climate Zone Subtype A. Places in Butts County, Georgia Flovilla, Georgia Jackson, Georgia Jenkinsburg, Georgia Retrieved from "http:en.openei.orgw...

  5. Whitfield County, Georgia: Energy Resources | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    Zone Subtype A. Registered Energy Companies in Whitfield County, Georgia Wilson and Dalton Places in Whitfield County, Georgia Cohutta, Georgia Dalton, Georgia Tunnel Hill,...

  6. Pickens County, Georgia: Energy Resources | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    Number 4 Climate Zone Subtype A. Places in Pickens County, Georgia Jasper, Georgia Nelson, Georgia Talking Rock, Georgia Retrieved from "http:en.openei.orgw...

  7. Wayne County, Georgia: Energy Resources | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    Zone Number 2 Climate Zone Subtype A. Places in Wayne County, Georgia Jesup, Georgia Odum, Georgia Screven, Georgia Retrieved from "http:en.openei.orgwindex.php?titleWayne...

  8. Eleventh ARM Science Team Meeting Proceedings, Atlanta, Georgia, March 19-23, 2001

    U.S. Department of Energy (DOE) - all webpages (Extended Search)

    Spectroscopic Remote Sensing of Clouds S. V. Dvoryashin and G. S. Golitsyn A. M. Obukhov Institute of Atmospheric Physics Russian Academy of Sciences Moscow, Russia Introduction Cloud investigations using remote sensing are becoming increasingly significant. Parameters of particular interest include optical thickness, liquid water content, and liquid water path. At present, the following cloud parameters can be obtained from ground-based measurements: * optical thickness - from measurements of

  9. Reference Buildings by Climate Zone and Representative City: 3A Atlanta, Georgia

    Energy.gov [DOE]

    In addition to the ZIP file for each building type, you can directly view the "scorecard" spreadsheet that summarizes the inputs and results for each location. This Microsoft Excel spreadsheet is also included in the ZIP file. For version 1.4, only the IDF file is included.

  10. Urban airshed modeling of air quality impacts of alternative transportation fuel use in Los Angeles and Atlanta

    SciTech Connect

    NONE

    1997-12-01

    The main objective of NREL in supporting this study is to determine the relative air quality impact of the use of compressed natural gas (CNG) as an alternative transportation fuel when compared to low Reid vapor pressure (RVP) gasoline and reformulated gasoline (RFG). A table lists the criteria, air toxic, and greenhouse gas pollutants for which emissions were estimated for the alternative fuel scenarios. Air quality impacts were then estimated by performing photochemical modeling of the alternative fuel scenarios using the Urban Airshed Model Version 6.21 and the Carbon Bond Mechanism Version IV (CBM-IV) (Geary et al., 1988) Using this model, the authors examined the formation and transport of ozone under alternative fuel strategies for motor vehicle transportation sources for the year 2007. Photochemical modeling was performed for modeling domains in Los Angeles, California, and Atlanta, Georgia.

  11. Georgia Regions | U.S. DOE Office of Science (SC)

    Office of Science (SC)

    state, county, city, or district. For more information, please visit the Middle School Coach page. Georgia Region Middle School Regional Georgia Georgia Regional Middle School...

  12. Marion County, Georgia: Energy Resources | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    Climate Zone Number 3 Climate Zone Subtype A. Places in Marion County, Georgia Buena Vista, Georgia Retrieved from "http:en.openei.orgwindex.php?titleMarionCounty,Georgia...

  13. Sumter County, Georgia: Energy Resources | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    Number 3 Climate Zone Subtype A. Registered Energy Companies in Sumter County, Georgia Habitat for Humanity Places in Sumter County, Georgia Americus, Georgia Andersonville,...

  14. Georgia's 8th congressional district: Energy Resources | Open...

    OpenEI (Open Energy Information) [EERE & EIA]

    Georgia. Registered Energy Companies in Georgia's 8th congressional district Alterra Bioenergy Alterra Bioenergy LLC Biomass Energy Services Inc Middle Georgia Biofuels Retrieved...

  15. Towns County, Georgia: Energy Resources | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    Number 4 Climate Zone Subtype A. Places in Towns County, Georgia Hiawassee, Georgia Young Harris, Georgia Retrieved from "http:en.openei.orgwindex.php?titleTownsCounty,G...

  16. Bryan County, Georgia: Energy Resources | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    Number 2 Climate Zone Subtype A. Places in Bryan County, Georgia Pembroke, Georgia Richmond Hill, Georgia Retrieved from "http:en.openei.orgwindex.php?titleBryanCounty,Ge...

  17. US SoAtl GA Site Consumption

    Energy Information Administration (EIA) (indexed site)

    GA Site Consumption million Btu $0 $500 $1,000 $1,500 $2,000 $2,500 US SoAtl GA Expenditures dollars ALL ENERGY average per household (excl. transportation) 0 4,000 8,000 12,000 16,000 US SoAtl GA Site Consumption kilowatthours $0 $300 $600 $900 $1,200 $1,500 $1,800 US SoAtl GA Expenditures dollars ELECTRICITY ONLY average per household * Site energy consumption (89.5 million Btu) and energy expenditures per household ($2,067) in Georgia are similar to the U.S. household averages. * Per

  18. Building America Case Study: Ground Source Heat Pump Research, TaC Studios Residence, Atlanta, Georigia (Fact Sheet), Technology Solutions for New and Existing Homes, Energy Efficiency & Renewable Energy (EERE)

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    Ground Source Heat Pump Research, TaC Studios Residence Atlanta, Georgia PROJECT INFORMATION Construction: New Home Type: Single-family Builder: TaC Studios, tacstudios.com Size: 3,570 ft 2 Price Range: about $750,000 Date completed: 2011 Climate zone: Mixed-humid PERFORMANCE DATA HERS index: 66 Builder standard practice = 75 Case study house 3,570 ft 2 Projected annual energy cost savings: $493 Incremental cost of energy efficiency measures: $51,036 Incremental annual mortgage: $1,449 Annual

  19. EECBG Success Story: Atlanta Suburb Greases the Path to Savings...

    Energy.gov [DOE] (indexed site)

    their investment in biodiesel. | Photo by Ken Cook Downtown Smyrna, Georgia, a town that's poised to see big savings thanks to their investment in biodiesel. | Photo by Ken Cook ...

  20. Atlanta Suburb Greases the Path to Savings with Biodiesel | Department...

    Energy.gov [DOE] (indexed site)

    their investment in biodiesel. | Photo by Ken Cook Downtown Smyrna, Georgia, a town that's poised to see big savings thanks to their investment in biodiesel. | Photo by Ken Cook ...

  1. Georgia Shore Assistance Act

    SciTech Connect

    Pendergrast, C.

    1984-01-01

    The Georgia General Assembly passed the Shore Assistance Act in 1979 in order to fill a regulatory gap in the state's management of its coastal resources. A review of its legislative history, purposes, applications, and effects in terms of the sand sharing system of sand dunes, beaches, sandbars, and shoals concludes that the Act is poorly drafted. In its application on the oceanfront, it betrays its intent and protects the oceanfront owner. It has failed to satisfy the requirements of the public trust in the tidal foreshore. Amendments to clarify its understanding of the functions and values of the sand-sharing system should also conform with the state's duties under the public trust. 139 references.

  2. Georgia Nuclear Profile - Power Plants

    Energy Information Administration (EIA) (indexed site)

    nuclear power plants, summer capacity and net generation, 2010" "Plant nametotal ...,302","19,610",58.5,"Georgia Power Co" "2 Plants 4 Reactors","4,061","33,512",100.0 "Note: ...

  3. Georgia Power | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    An investor-owned utility that serves 2.25m customers in 155 counties of Georgia, USA. Coordinates: 33.748315, -84.391109 Show Map Loading map... "minzoom":false,"mappi...

  4. Georgia Power- Solar Buyback Program

    Energy.gov [DOE]

    Georgia Power, the state's largest utility, has established a green power program, that allows the company to purchase limited solar generation at a premium price based on other customers volunta...

  5. Georgia Power- Advanced Solar Initiative

    Energy.gov [DOE]

    Note: According to Georgia Power's website, the Advanced Solar Initiative's final program guidelines are due to be published on June 25th and the bidding period for is expected to open on July 10,...

  6. File:USDA-CE-Production-GIFmaps-GA.pdf | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    GA.pdf Jump to: navigation, search File File history File usage Georgia Ethanol Plant Locations Size of this preview: 776 600 pixels. Full resolution (1,650 1,275 pixels,...

  7. Better Buildings Challenge, Atlanta Nears Halfway Mark in Meeting Citywide Goal of 20% Energy Savings

    Energy.gov [DOE]

    The Energy Department yesterday recognized Atlanta for its progress and leadership in meeting a citywide goal to improve the energy performance of its buildings by 20% by 2020.

  8. Adrian, Georgia: Energy Resources | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    is a stub. You can help OpenEI by expanding it. Adrian is a city in Emanuel County and Johnson County, Georgia. It falls under Georgia's 12th congressional district.12...

  9. Camilla, Georgia: Energy Resources | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    Map This article is a stub. You can help OpenEI by expanding it. Camilla is a city in Mitchell County, Georgia. It falls under Georgia's 2nd congressional district.12...

  10. Rome, Georgia: Energy Resources | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    Hide Map This article is a stub. You can help OpenEI by expanding it. Rome is a city in Floyd County, Georgia. It falls under Georgia's 11st congressional district.12...

  11. Chatsworth, Georgia: Energy Resources | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    This article is a stub. You can help OpenEI by expanding it. Chatsworth is a city in Murray County, Georgia. It falls under Georgia's 9th congressional district.12 Registered...

  12. Alamo, Georgia: Energy Resources | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    Map This article is a stub. You can help OpenEI by expanding it. Alamo is a town in Wheeler County, Georgia. It falls under Georgia's 1st congressional district.12...

  13. Georgia Transmission Corp | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    Corp Jump to: navigation, search Name: Georgia Transmission Corp Place: Georgia References: EIA Form EIA-861 Final Data File for 2010 - File1a1 EIA Form 861 Data Utility Id 7197...

  14. Ailey, Georgia: Energy Resources | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    Map This article is a stub. You can help OpenEI by expanding it. Ailey is a city in Montgomery County, Georgia. It falls under Georgia's 12th congressional district.12...

  15. Georgia Nonprofit Helps Homeowners Save Energy

    Energy.gov [DOE]

    Residents in Georgia are living in more comfortable and energy-efficient homes because of this Savannah based weatherization program.

  16. Georgia Nuclear Profile - Power Plants

    Energy Information Administration (EIA) (indexed site)

    nuclear power plants, summer capacity and net generation, 2010" "Plant name/total reactors","Summer capacity (mw)","Net generation (thousand mwh)","Share of State nuclear net generation (percent)","Owner" "Edwin I Hatch Unit 1, Unit 2","1,759","13,902",41.5,"Georgia Power Co" "Vogtle Unit 1, Unit 2","2,302","19,610",58.5,"Georgia Power Co" "2 Plants 4

  17. Energy conserving site design case study: Shenandoah, Georgia. Final report

    SciTech Connect

    Not Available

    1980-01-01

    The case study examines the means by which energy conservation can be achieved at an aggregate community level by using proper planning and analytical techniques for a new town, Shenandoah, Georgia, located twenty-five miles southwest of Atlanta's Hartsfield International Airport. A potentially implementable energy conservation community plan is achieved by a study team examining the land use options, siting characteristics of each building type, alternate infrastructure plans, possible decentralized energy options, and central utility schemes to determine how community energy conservation can be achieved by use of pre-construction planning. The concept for the development of mixed land uses as a passively sited, energy conserving community is based on a plan (Level 1 Plan) that uses the natural site characteristics, maximizes on passive energy siting requirement, and allows flexibility for the changing needs of the developers. The Level 2 Plan is identical with Level 1 plan plus a series of decentraized systems that have been added to the residential units: the single-family detached, the apartments, and the townhouses. Level 3 Plan is similar to the Level 1 Plan except that higher density dwellings have been moved to areas adjacent to central site. The total energy savings for each plan relative to the conventional plan are indicated. (MCW)

  18. GE Wind Energy | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    Energy Jump to: navigation, search Name: GE Wind Energy Place: Atlanta, Georgia Zip: GA 30339 Sector: Wind energy Product: GE's wind energy division, formed as a result of the...

  19. Revised Manuscript

    U.S. Department of Energy (DOE) - all webpages (Extended Search)

    Upton, NY 11973 e Department of Physics and Astronomy, Georgia State University, Atlanta, GA, 30303 Abstract: An evaluation of A 8-10 was published in Nuclear Physics A745 ...

  20. Project Presentations for ITP Peer Review

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    INSTITUTE INDUSTRY DAY WORKSHOP FEBRUARY 25, 2015 FINAL AGENDA Georgia Tech Hotel and Conference Center 800 Spring Street NW Atlanta, GA 30308 7:30 - 9:00 am...

  1. Lighting Up Georgia Convenience Stores

    Office of Energy Efficiency and Renewable Energy (EERE)

    Thanks to help from the Energy Department, convenience stores across Georgia are saving energy by switching to energy efficient lighting. In the first year alone, participating small businesses have saved over $7,000 after the retrofits and over 54,000 KWh of energy.

  2. Bacon County, Georgia: Energy Resources | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    169-2006 Climate Zone Number 2 Climate Zone Subtype A. Places in Bacon County, Georgia Alma, Georgia Retrieved from "http:en.openei.orgwindex.php?titleBaconCounty,Georgia&o...

  3. McDuffie County, Georgia: Energy Resources | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    Number 3 Climate Zone Subtype A. Places in McDuffie County, Georgia Dearing, Georgia Thomson, Georgia Retrieved from "http:en.openei.orgwindex.php?titleMcDuffieCounty,Geor...

  4. Energy Secretary Moniz to Keynote Sam Nunn Policy Forum in Atlanta

    Energy.gov [DOE]

    Secretary Moniz will make a key announcement and meet with Georgia Tech students, discuss DOE-funded projects

  5. Recovery Act State Memos Georgia

    Energy.gov [DOE] (indexed site)

    Georgia For questions about DOE's Recovery Act activities, please contact the DOE Recovery Act Clearinghouse: 1-888-DOE-RCVY (888-363-7289), Monday through Friday, 9 a.m. to 7 p.m. Eastern Time https://recoveryclearinghouse.energy.gov/contactUs.htm. All numbers and projects listed as of June 1, 2010 TABLE OF CONTENTS RECOVERY ACT SNAPSHOT................................................................................... 1 FUNDING ALLOCATION

  6. Building America Case Study: Ground Source Heat Pump Research, TaC Studios Residence, Atlanta, Georigia (Fact Sheet)

    SciTech Connect

    Not Available

    2014-09-01

    As part of the NAHB Research Center Industry Partnership, Southface partnered with TaC Studios, an Atlanta based architecture firm specializing in residential and light commercial design, on the construction of a new test home in Atlanta, GA in the mixed-humid climate. This home serves as a residence and home office for the firm's owners, as well as a demonstration of their design approach to potential and current clients. Southface believes the home demonstrates current best practices for the mixed-humid climate, including a building envelope featuring advanced air sealing details and low density spray foam insulation, glazing that exceeds ENERGY STAR requirements, and a high performance heating and cooling system. Construction quality and execution was a high priority for TaC Studios and was ensured by a third party review process. Post construction testing showed that the project met stated goals for envelope performance, an air infiltration rate of 2.15 ACH50. The homeowner's wished to further validate whole house energy savings through the project's involvement with Building America and this long-term monitoring effort. As a Building America test home, this home was evaluated to detail whole house energy use, end use loads, and the efficiency and operation of the ground source heat pump and associated systems. Given that the home includes many non-typical end use loads including a home office, pool, landscape water feature, and other luxury features not accounted for in Building America modeling tools, these end uses were separately monitored to determine their impact on overall energy consumption.

  7. Americus, Georgia: Energy Resources | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    2nd congressional district.12 Registered Energy Companies in Americus, Georgia Habitat for Humanity References US Census Bureau Incorporated place and minor civil...

  8. ,"Georgia Natural Gas LNG Storage Withdrawals (MMcf)"

    Energy Information Administration (EIA) (indexed site)

    Of Series","Frequency","Latest Data for" ,"Data 1","Georgia Natural Gas LNG Storage Withdrawals (MMcf)",1,"Annual",2014 ,"Release Date:","9302015" ,"Next Release...

  9. ,"Georgia Natural Gas LNG Storage Additions (MMcf)"

    Energy Information Administration (EIA) (indexed site)

    Of Series","Frequency","Latest Data for" ,"Data 1","Georgia Natural Gas LNG Storage Additions (MMcf)",1,"Annual",2014 ,"Release Date:","9302015" ,"Next Release...

  10. GEORGIA RECOVERY ACT SNAPSHOT | Department of Energy

    Energy.gov [DOE] (indexed site)

    Georgia has substantial natural resources, including biomass and hydroelectric power .The American Recovery & Reinvestment Act (ARRA) is making a meaningful down payment on the ...

  11. Georgia Power- Small Commercial Energy Efficiency Program

    Energy.gov [DOE]

    Georgia Power offers Small Commercial rebates to customers on qualifying rates. See program web site for additional details including eligibility information.

  12. Chattahoochee Hill Country, Georgia: Energy Resources | Open...

    OpenEI (Open Energy Information) [EERE & EIA]

    Hill Country, Georgia: Energy Resources Jump to: navigation, search Equivalent URI DBpedia Coordinates 31.721548, -83.2599068 Show Map Loading map... "minzoom":false,"mappings...

  13. Georgia (country): Energy Resources | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    Country Profile Name Georgia Population Unavailable GDP Unavailable Energy Consumption 0.17 Quadrillion Btu 2-letter ISO code GE 3-letter ISO code GEO Numeric ISO...

  14. Georgia/Wind Resources | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    Guidebook >> Georgia Wind Resources WindTurbine-icon.png Small Wind Guidebook * Introduction * First, How Can I Make My Home More Energy Efficient? * Is Wind Energy Practical...

  15. Atkinson County, Georgia ASHRAE 169-2006 Climate Zone | Open...

    OpenEI (Open Energy Information) [EERE & EIA]

    Atkinson County, Georgia ASHRAE 169-2006 Climate Zone Jump to: navigation, search County Climate Zone Place Atkinson County, Georgia ASHRAE Standard ASHRAE 169-2006 Climate Zone...

  16. City of Hogansville, Georgia (Utility Company) | Open Energy...

    OpenEI (Open Energy Information) [EERE & EIA]

    search Name: Hogansville City of Place: Georgia Website: www.cityofhogansville.org Facebook: https:www.facebook.comhogansville.georgia Outage Hotline: 706.637.6648...

  17. Georgia Tech School of Civil and Environmental Engineering |...

    OpenEI (Open Energy Information) [EERE & EIA]

    School of Civil and Environmental Engineering Jump to: navigation, search Name: Georgia Tech School of Civil and Environmental Engineering Abbreviation: Georgia Tech School of CEE...

  18. Secretary Bodman Touts Importance of Cellulosic Ethanol at Georgia...

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    Secretary Bodman Touts Importance of Cellulosic Ethanol at Georgia Biorefinery Groundbreaking Secretary Bodman Touts Importance of Cellulosic Ethanol at Georgia Biorefinery...

  19. Sec. Moniz to Georgia, Energy Department Scheduled to Close on...

    Energy Saver

    Georgia, Energy Department Scheduled to Close on Loan Guarantees to Construct New Nuclear Power Plant Reactors Sec. Moniz to Georgia, Energy Department Scheduled to Close on Loan ...

  20. City of Jackson, Georgia (Utility Company) | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    Jackson, Georgia (Utility Company) Jump to: navigation, search Name: Jackson City of Place: Georgia Phone Number: 770-775-3858 Website: www.cityofjacksonga.com196El Facebook:...

  1. City of Oxford, Georgia (Utility Company) | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    Oxford, Georgia (Utility Company) Jump to: navigation, search Name: Oxford City of Place: Georgia Phone Number: 770-786-7004 Website: www.oxfordgeorgia.org Outage Hotline:...

  2. Georgia Tech Center for Innovative Fuel Cell and Battery Technologies...

    OpenEI (Open Energy Information) [EERE & EIA]

    Innovative Fuel Cell and Battery Technologies Jump to: navigation, search Name: Georgia Tech Center for Innovative Fuel Cell and Battery Technologies Place: Georgia Product: The...

  3. Hancock County, Georgia: Energy Resources | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    Climate Zone Number 3 Climate Zone Subtype A. Places in Hancock County, Georgia Sparta, Georgia Retrieved from "http:en.openei.orgwindex.php?titleHancockCounty,Georgi...

  4. City of Adel, Georgia (Utility Company) | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    Georgia (Utility Company) Jump to: navigation, search Name: City of Adel Place: Georgia Phone Number: (229) 896-3601 Website: www.cityofadel.usdepartments Outage Hotline: (229)...

  5. City of Lawrenceville, Georgia (Utility Company) | Open Energy...

    OpenEI (Open Energy Information) [EERE & EIA]

    Georgia (Utility Company) Jump to: navigation, search Name: City of Lawrenceville Place: Georgia Phone Number: 770.963.2414 Website: www.lawrencevillega.orggovern Outage Hotline:...

  6. Secretary Bodman Touts Importance of Cellulosic Ethanol at Georgia...

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    Touts Importance of Cellulosic Ethanol at Georgia Biorefinery Groundbreaking Secretary Bodman Touts Importance of Cellulosic Ethanol at Georgia Biorefinery Groundbreaking October ...

  7. Georgia and Arkansas Residential Energy Code Field Studies |...

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    Georgia and Arkansas Residential Energy Code Field Studies Georgia and Arkansas Residential Energy Code Field Studies Lead Performer: Southeast Energy Efficiency Alliance - ...

  8. DeKalb County/Metropolitan Atlanta Alternative Fuel and Advanced...

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    60tifrancis2012o.pdf More Documents & Publications DeKalb CountyMetropolitan Atlanta Alternative Fuel and Advanced Technology Vehicle Project DeKalb CountyMetropolitan...

  9. DeKalb County/Metropolitan Atlanta Alternative Fuel and Advanced...

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    vt060francis2010p.pdf More Documents & Publications DeKalb CountyMetropolitan Atlanta Alternative Fuel and Advanced Technology Vehicle Project DeKalb CountyMetropolitan...

  10. DeKalb County/Metropolitan Atlanta Alternative Fuel and Advanced...

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    60tifrancis2011p.pdf More Documents & Publications DeKalb CountyMetropolitan Atlanta Alternative Fuel and Advanced Technology Vehicle Project DeKalb CountyMetropolitan...

  11. DOE Zero Energy Ready Home Case Study: Heirloom Design Build, Euclid Avenue, Atlanta, GA

    Energy.gov [DOE]

    Case study of a DOE 2015 Housing Innovation Award winning custom home in the mixed-humid climate that got a HERS 50 without PV, with 2x6 16” on center walls with R-19 ocsf; basement with R-28 ccsf, R-5 rigid foam under slab; sealed attic with R-28 ocsf under roof deck; 22.8 SEER; 12.5 HSPF heat pump.

  12. DOE ZERH Case Study: Heirloom Design Build, Euclid Avenue, Atlanta, GA

    SciTech Connect

    none,

    2015-09-01

    Case study of a DOE 2015 Housing Innovation Award winning custom home in the mixed-humid climate that got a HERS 50 without PV, with 2x6 16” on center walls with R-19 ocsf; basement with R-28 ccsf, R-5 rigid foam under slab; sealed attic with R-28 ocsf under roof deck; 22.8 SEER; 12.5 HSPF heat pump.

  13. Ecological investigation of a hazardous waste site, Warner Robins, Georgia

    SciTech Connect

    Wade, M.; Billig, P.

    1993-05-01

    Landfill No. 4 and the sludge lagoon at Robins Air Force Base, Warner Robins, Georgia, were added to the United States Environmental Protection Agency (EPA) National Priorities List in 1987 because of highpotential for contaminant migration. Warner Robins is located approximately 90 miles southeast of Atlanta. In 1990 CH2M HILL conducted a Remedial Investigation at the base that recommended that further ecological assessment investigations be conducted (CH2M HILL 1990). The subject paper is the result of this recommendation. The ecological study was carried out by the Hazardous Waste Remedial Actions Program (HAZWRAP)Division of Martin Marietta Energy Systems, Inc., working jointly with its subcontractor CDM (CDM 1992a). The primary area of investigation (Zone 1) included the sludge lagoon, Landfill No. 4, the wetland area east of the landfill and west of Hannah Road (including two sewage treatment ponds), and the area between Hannah Road and Horse Creek (Fig. 1). The bottomland forest wetlands of Zone 1 extend from the landfill east to Horse Creek. Surface water and groundwater flow across Zone 1 is generally in an easterly direction toward Horse Creek. Horse Creek is a south-flowing tributary of the Ocmulgee River Floodplain. The objective of the study was to perform a quantitative analysis of ecological risk associated with the ecosystems present in Zone 1. This investigation was unique because the assessment was to be based upon many measurement endpoints resulting in both location-specific data and data that would assess the condition of the overall ecosystem. The study was segregated into five distinct field investigations: hydrology, surface water and sediment, aquatic biology, wetlands ecology, and wildlife biology.

  14. Alternative Fuels Data Center: Georgia Transportation Data for Alternative

    Alternative Fuels and Advanced Vehicles Data Center

    Fuels and Vehicles Georgia Transportation Data for Alternative Fuels and Vehicles to someone by E-mail Share Alternative Fuels Data Center: Georgia Transportation Data for Alternative Fuels and Vehicles on Facebook Tweet about Alternative Fuels Data Center: Georgia Transportation Data for Alternative Fuels and Vehicles on Twitter Bookmark Alternative Fuels Data Center: Georgia Transportation Data for Alternative Fuels and Vehicles on Google Bookmark Alternative Fuels Data Center: Georgia

  15. SEP Success Story: Lighting Up Georgia Convenience Stores | Department of

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    Energy Lighting Up Georgia Convenience Stores SEP Success Story: Lighting Up Georgia Convenience Stores March 28, 2012 - 2:23pm Addthis One of several Georgia convenience stores that improved lighting while saving energy and money. | Courtesy of Outlaw Consulting, Inc. One of several Georgia convenience stores that improved lighting while saving energy and money. | Courtesy of Outlaw Consulting, Inc. Convenience stores across Georgia are saving energy thanks to energy efficient lighting

  16. Consent-Based Siting Public Meeting in Atlanta (April 11, 2016...

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    ... McDonald, Jr., Georgia Public Service Commission Rick ... designing and implementing processes for the ... Goldstein suggested the federal Nuclear Waste Policy Act be ...

  17. Milton, Georgia: Energy Resources | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    Hide Map This article is a stub. You can help OpenEI by expanding it. Milton is a city in Fulton County, Georgia.1 References US Census Bureau Incorporated...

  18. Fossil Energy | National Energy Technology Laboratory | Georgia...

    U.S. Department of Energy (DOE) - all webpages (Extended Search)

    Engineering and an adjunct professor in the College of Computing and the Ernest J. Scheller College of Business. He served as a Vice President and Director of the Georgia Tech...

  19. Georgia Natural Gas Underground Storage Withdrawals (Million...

    Energy Information Administration (EIA) (indexed site)

    Withdrawals (Million Cubic Feet) Georgia Natural Gas Underground Storage Withdrawals (Million Cubic Feet) Decade Year-0 Year-1 Year-2 Year-3 Year-4 Year-5 Year-6 Year-7 Year-8...

  20. Central Georgia EMC- Photovoltaic Rebate Program

    Office of Energy Efficiency and Renewable Energy (EERE)

    In June 2008, Central Georgia Electric Membership Corporation (CGEMC) began offering a rebate of $450 per kilowatt (kW) to residential members who install photovoltaic (PV) systems that are...

  1. Georgia Power- Energy Efficiency Home Improvement Rebates

    Energy.gov [DOE]

    Georgia Power offers up to $2,575 in rebates to customers who choose to improve home performance with whole building BPI certified efficiency measures or up to $700 for individual improvements from...

  2. Water-supply potential of the Upper Floridan aquifer in the vicinity of Savannah, Georgia

    SciTech Connect

    Garza, R.; Krause, R.E. )

    1993-03-01

    The Upper Floridan aquifer is the primary source of freshwater in coastal Georgia. Groundwater withdrawal in the area of Savannah and in the adjacent coastal areas in Georgia and South Carolina has resulted in large regional water-level declines and a reversal of the hydraulic gradient that existed prior to development. Changes in gradient and decreasing water levels are causing lateral encroachment of seawater into the Upper Floridan aquifer at the northern end of Hilton Head Island, SC, and vertical intrusion of saltwater into the Upper and Lower Floridan aquifers in the Brunswick, GA., area. Concerns about future water-supply demands prompted the US Geological Survey and the Chatham County-Savannah Metropolitan Planning Commission to undertake a cooperative study to evaluate the ground-water resources in the Savannah, GA, area. A numerical ground-water flow model was developed and used in conjunction with other previously calibrated models in the coastal areas of Georgia and South Carolina to simulate the effects of additional ground-water withdrawal on water levels. Based on model simulations and the constraint of preventing additional water-level declines at the locations of encroachment and intrusion, the potential of the Upper Floridan aquifer to supply additional water in the Savannah area is limited under present hydrologic conditions. The potential for additional withdrawal in the vicinity of Savannah, GA, ranges from less than 1 million gallons per day (Mgal/d) to about 5 Mgal/d. Because of the limited water-supply potential, hypothetical alternatives of ground-water withdrawal were simulated to determine the effects on water levels. These simulations indicate that reduction and redistribution of ground-water withdrawal would not adversely affect water levels at the locations of encroachment and intrusion.

  3. ,"Georgia Natural Gas Underground Storage Withdrawals (MMcf)"

    Energy Information Administration (EIA) (indexed site)

    Withdrawals (MMcf)" ,"Click worksheet name or tab at bottom for data" ,"Worksheet Name","Description","# Of Series","Frequency","Latest Data for" ,"Data 1","Georgia Natural Gas Underground Storage Withdrawals (MMcf)",1,"Annual",1975 ,"Release Date:","10/31/2016" ,"Next Release Date:","11/30/2016" ,"Excel File Name:","n5060ga2a.xls"

  4. Georgia's 2nd congressional district: Energy Resources | Open...

    OpenEI (Open Energy Information) [EERE & EIA]

    Energy Companies in Georgia's 2nd congressional district First United Ethanol LLC Habitat for Humanity Retrieved from "http:en.openei.orgwindex.php?titleGeorgia%27s2ndc...

  5. Middle Georgia El Member Corp | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    El Member Corp Place: Georgia Phone Number: 1-800-342-0144 Website: www.mgemc.com Facebook: https:www.facebook.comMiddleGeorgiaEMC Outage Hotline: 229-268-2671; 800-342-0144...

  6. Central Georgia El Member Corp | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    Central Georgia El Member Corp Place: Georgia Phone Number: 770-775-7857 Website: www.cgemc.com Twitter: @CentralGAEMC Outage Hotline: 770-775-7857 References: EIA Form EIA-861...

  7. Pine Mountain, Georgia: Energy Resources | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    article is a stub. You can help OpenEI by expanding it. Pine Mountain is a town in Harris County and Meriwether County, Georgia. It falls under Georgia's 3rd congressional...

  8. Ben Hill County, Georgia: Energy Resources | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    Climate Zone Number 3 Climate Zone Subtype A. Places in Ben Hill County, Georgia Fitzgerald, Georgia Retrieved from "http:en.openei.orgwindex.php?titleBenHillCounty,Geo...

  9. North Georgia Elec Member Corp | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    navigation, search Name: North Georgia Elec Member Corp Place: Georgia Phone Number: Dalton: (706) 259-9441; Fort Oglethorpe: (706) 866-2231; Calhoun: (706) 629-3160; Trion:...

  10. City of Commerce, Georgia (Utility Company) | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    City of Commerce, Georgia (Utility Company) Jump to: navigation, search Name: City of Commerce Place: Georgia Phone Number: (706) 335-4200 Website: www.commercega.orgContentDef...

  11. McCaysville, Georgia: Energy Resources | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    Act Smart Grid Projects in McCaysville, Georgia Tri State Electric Membership Corporation Smart Grid Project Utility Companies in McCaysville, Georgia Tri-State Electric Member...

  12. Alternative Fuels Data Center: Georgia Sets the Pace for Plug...

    Alternative Fuels and Advanced Vehicles Data Center

    Georgia Sets the Pace for Plug-In Electric Vehicles Updated February 3, 2015 Photo of electric vehicle Georgia ZEV Tax Credit Eligible Battery Electric Vehicles BMW i3 Fiat 500e ...

  13. College Park, Georgia: Energy Resources | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    Hide Map This article is a stub. You can help OpenEI by expanding it. College Park is a city in Clayton County and Fulton County, Georgia. It falls under Georgia's 5th...

  14. 2014 Race to Zero Student Design Competition: Georgia Institute of

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    Technology Profile | Department of Energy Georgia Institute of Technology Profile 2014 Race to Zero Student Design Competition: Georgia Institute of Technology Profile 2014 Race to Zero Student Design Competition: Georgia Institute of Technology Profile, from the U.S. Department of Energy. rtz_georgia_profile.pdf (4.02 MB) More Documents & Publications 2014 Race to Zero Student Design Competition: Auburn University Profile 2014 Race to Zero Student Design Competition: University of

  15. Georgia Renewable Electric Power Industry Net Summer Capacity...

    Energy Information Administration (EIA) (indexed site)

    Georgia" "Energy Source",2006,2007,2008,2009,2010 "Geothermal","-","-","-","-","-" "Hydro Conventional",2027,2032,2041,2046,2052 "Solar","-","-","-","-","-" "Wind","-","-","-","-",...

  16. Georgia Renewable Electric Power Industry Net Generation, by...

    Energy Information Administration (EIA) (indexed site)

    Georgia" "Energy Source",2006,2007,2008,2009,2010 "Geothermal","-","-","-","-","-" "Hydro Conventional",2569,2236,2145,3260,3322 "Solar","-","-","-","-","-" "Wind","-","-","-","-",...

  17. Georgia Recovery Act State Memo | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    Georgia Recovery Act State Memo Georgia Recovery Act State Memo Georgia has substantial natural resources, including biomass and hydroelectric power. The American Recovery & Reinvestment Act (ARRA) is making a meaningful down payment on the nation's energy and environmental future. The Recovery Act investments in Georgia are supporting a broad range of clean energy projects, from energy efficiency and the smart grid to environmental cleanup and alternative fuels and vehicles. Through these

  18. Categorical Exclusion Determination (Georgia-Alabama-SouthCarolina System)

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    | Department of Energy Categorical Exclusion Determination (Georgia-Alabama-SouthCarolina System) Categorical Exclusion Determination (Georgia-Alabama-SouthCarolina System) Proposed rate adjustment for the Georgia-Alabama-South Carolina System of Projects (253.36 KB) More Documents & Publications CX-001068: Categorical Exclusion Determination SOCO-4-E Wholesale Power Rate Schedule Regulation-1

  19. Preparation of public housing energy efficiency publications for the Atlanta Housing Authority

    SciTech Connect

    1995-08-01

    The Georgia Institute of Technology (Georgia Tech) has produced and evaluated the effectiveness of pamphlets prepared to encourage utility cost conservation. The target population for this project is not only public housing residents but also the public housing maintenance staff (who also have a dramatic impact on facility energy costs). Because the majority of the problems associated with excess resident utility costs occur during extreme cold weather of the heating season, heating conservation was the focus of this study.

  20. EA-1963: Elba Liquefaction Project, Savannah, Georgia

    Office of Energy Efficiency and Renewable Energy (EERE)

    The Federal Energy Regulatory Commission (FERC) is preparing, with DOE as a cooperating agency, an EA to analyze the potential environmental impacts of a proposal to add natural gas liquefaction and export capabilities at the existing Elba Liquefied Natural Gas Terminal near Savannah, Georgia. Additional information is available at FERCs eLibrary website, elibrary.ferc.gov/idmws/docket_search.asp; search for docket number PF13-3.

  1. Atkinson County, Georgia: Energy Resources | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    Atkinson County, Georgia: Energy Resources Jump to: navigation, search Equivalent URI DBpedia Coordinates 31.2932161, -82.8640623 Show Map Loading map... "minzoom":false,"mapp...

  2. City of Mansfield, Georgia (Utility Company) | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    search Name: City of Mansfield Place: Georgia Website: www.mansfieldga.comutilities. Facebook: https:www.facebook.commansfieldga Outage Hotline: 770-710-8235 References: EIA...

  3. EA-1963: Elba Liquefaction Project, Savannah, Georgia | Department...

    Energy.gov [DOE] (indexed site)

    Gas Terminal near Savannah, Georgia. Additional information is available at FERC's eLibrary website, elibrary.ferc.govidmwsdocketsearch.asp; search for docket number PF13-3....

  4. Building America Case Study: Savannah Gardens, Savannah, Georgia...

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    Savannah Gardens Savannah, Georgia PROJECT INFORMATION Construction: New home Type: Single-family, affordable Partners: Savannah Housing Department Chatham Home Builders Southface ...

  5. Georgia-UNEP Risoe Technology Needs Assessment Program | Open...

    OpenEI (Open Energy Information) [EERE & EIA]

    UNEP Risoe Technology Needs Assessment Program Jump to: navigation, search Name Georgia-UNEP Risoe-Technology Needs Assessment Program AgencyCompany Organization UNEP-Risoe...

  6. Clay County, Georgia: Energy Resources | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    Georgia: Energy Resources Jump to: navigation, search Equivalent URI DBpedia Coordinates 31.6447931, -85.0025539 Show Map Loading map... "minzoom":false,"mappingservice":"goog...

  7. Irwin County, Georgia: Energy Resources | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    Irwin County, Georgia: Energy Resources Jump to: navigation, search Equivalent URI DBpedia Coordinates 31.5893221, -83.2934086 Show Map Loading map... "minzoom":false,"mapping...

  8. Sandy Springs, Georgia: Energy Resources | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    Springs, Georgia: Energy Resources Jump to: navigation, search Equivalent URI DBpedia Coordinates 33.9242688, -84.3785379 Show Map Loading map... "minzoom":false,"mappingservi...

  9. Polk County, Georgia: Energy Resources | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    Polk County, Georgia: Energy Resources Jump to: navigation, search Equivalent URI DBpedia Coordinates 34.0132398, -85.1479364 Show Map Loading map... "minzoom":false,"mappings...

  10. Pierce County, Georgia: Energy Resources | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    Pierce County, Georgia: Energy Resources Jump to: navigation, search Equivalent URI DBpedia Coordinates 31.343806, -82.1713632 Show Map Loading map... "minzoom":false,"mapping...

  11. Washington County, Georgia: Energy Resources | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    Washington County, Georgia: Energy Resources Jump to: navigation, search Equivalent URI DBpedia Coordinates 32.962702, -82.820974 Show Map Loading map... "minzoom":false,"mapp...

  12. Georgia Natural Gas Imports Price All Countries (Dollars per...

    Annual Energy Outlook

    Price All Countries (Dollars per Thousand Cubic Feet) Georgia Natural Gas Imports Price ... Release Date: 4292016 Next Release Date: 5312016 Referring Pages: Natural Gas Imports ...

  13. Georgia Department of Natural Resources (GDNR) | Open Energy...

    OpenEI (Open Energy Information) [EERE & EIA]

    References Retrieved from "http:en.openei.orgwindex.php?titleGeorgiaDepartmentofNaturalResources(GDNR)&oldid765343" Categories: Organizations Oil and Gas State Oil and...

  14. Georgia Natural Gas Underground Storage Net Withdrawals All Operators...

    Energy Information Administration (EIA) (indexed site)

    Net Withdrawals All Operators (Million Cubic Feet) Georgia Natural Gas Underground Storage Net Withdrawals All Operators (Million Cubic Feet) Decade Year-0 Year-1 Year-2 Year-3...

  15. Barrow County, Georgia: Energy Resources | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    Barrow County, Georgia: Energy Resources Jump to: navigation, search Equivalent URI DBpedia Coordinates 34.0142667, -83.6986568 Show Map Loading map... "minzoom":false,"mappin...

  16. Georgia's 9th congressional district: Energy Resources | Open...

    OpenEI (Open Energy Information) [EERE & EIA]

    Resource Solutions ECO Solutions LLC Greenleaf Environmental Solutions Wilson and Dalton Utility Companies in Georgia's 9th congressional district Tri-State Electric Member...

  17. Georgia-World Bank Climate Projects | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    Projects Jump to: navigation, search Name Georgia-World Bank Climate Projects AgencyCompany Organization World Bank Focus Area Renewable Energy, Hydro Topics Background analysis...

  18. Stone Mountain, Georgia: Energy Resources | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    Stone Mountain, Georgia: Energy Resources Jump to: navigation, search Equivalent URI DBpedia Coordinates 33.8081608, -84.170196 Show Map Loading map... "minzoom":false,"mappin...

  19. Energy Secretary to Visit Georgia Nuclear Reactor Site and Tennessee...

    Energy.gov [DOE] (indexed site)

    Waynesboro, Georgia, and Oak Ridge National Laboratory on Wednesday, February 15 to highlight steps the Obama Administration is taking to restart America's nuclear energy industry. ...

  20. Sakis Meliopoulos, Georgia Institute of Technology, PSERC webinar...

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    Professor School of Electrical and Computer Engineering Georgia Institute of ... and ElectroMagnetic Interference) computer code, and the mGrid computer code - a ...

  1. Hall County, Georgia: Energy Resources | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    Hall County, Georgia: Energy Resources Jump to: navigation, search Equivalent URI DBpedia Coordinates 34.30778, -83.804868 Show Map Loading map... "minzoom":false,"mappingserv...

  2. EECBG Success Story: Georgia County Turning Industrial and Farm...

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    Georgia County Turning Industrial and Farm Waste Into Big Energy Savings EECBG Success ... Learn more. Addthis Related Articles EECBG Success Story: County Aims to Save with ...

  3. Georgia's 4th congressional district: Energy Resources | Open...

    OpenEI (Open Energy Information) [EERE & EIA]

    Vega Biofuels Inc formerly Vega Promotional Systems Retrieved from "http:en.openei.orgwindex.php?titleGeorgia%27s4thcongressionaldistrict&oldid1854...

  4. Georgia Green Loans Save & Sustain Program | Department of Energy

    Energy.gov [DOE] (indexed site)

    technologies not identified Program Info Sector Name Non-Profit Administrator Georgia Green Loans Website http:www.georgiagreenloans.org Funding Source U.S. Small Business...

  5. sorbent-georgia-tech | netl.doe.gov

    U.S. Department of Energy (DOE) - all webpages (Extended Search)

    Rapid Temperature Swing Adsorption Using PolymerSupported Amine Composite Hollow Fibers Project No.: DE-FE0007804 Georgia Tech Research Corporation is developing, fabricating, and...

  6. Mountain Park, Georgia: Energy Resources | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    Park, Georgia: Energy Resources Jump to: navigation, search Equivalent URI DBpedia Coordinates 33.8442715, -84.1293605 Show Map Loading map... "minzoom":false,"mappingservice"...

  7. Gresham Park, Georgia: Energy Resources | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    Gresham Park, Georgia: Energy Resources Jump to: navigation, search Equivalent URI DBpedia Coordinates 33.7034405, -84.3143682 Show Map Loading map... "minzoom":false,"mapping...

  8. Belvedere Park, Georgia: Energy Resources | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    Belvedere Park, Georgia: Energy Resources Jump to: navigation, search Equivalent URI DBpedia Coordinates 32.4606984, -84.9040969 Show Map Loading map... "minzoom":false,"mappi...

  9. Dawson County, Georgia: Energy Resources | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    Dawson County, Georgia: Energy Resources Jump to: navigation, search Equivalent URI DBpedia Coordinates 34.412912, -84.1435136 Show Map Loading map... "minzoom":false,"mapping...

  10. Environmental radionuclide distribution in Georgia after the Chernobyl accident

    SciTech Connect

    Mosulishvili, L.M.; Shoniya, N.I.; Katamadze, N.M.

    1994-01-01

    Atmospheric Chernobyl-released radioactivity, assessed at about 2 x 10{sup 18} Bq, caused global environmental contamination. Contaminated air masses appeared in the Transcaucasian region in early May, 1986. Rains that month promoted intense radionuclide deposition all over Georgia. The contamination level of western Georgia considerably exceeded the contamination level of eastern Georgia. The Black Sea coast of Georgia suffered from the Chernobyl accident as much as did strongly contaminated areas of the Ukraine and Belarus`. Unfortunately, governmental decrees on countermeasures against the consequences of the Chernobyl accident at that time did not even refer to the coast of Georgia. The authors observed the first increase in radioactivity background in rainfall samples collected on May 2, 1986, in Tbilisi. {gamma}-Spectrometric measurements of aerosol filters, vegetation, food stuffs, and other objects, in addition to rainfall, persistently confirmed the occurrence of short-lived radionuclides, including {sup 131}I. At first, this fact seemed unbelievable, because the Chernobyl accident had occurred only 4-5 days earlier and far from Georgia. However, these arguments proved to be faulty. Soon, environmental monitoring of radiation in Georgia became urgent. Environmental radionuclide distribution in Georgia shortly after the Chernobyl accident, as well as the methods of analysis, are reported in this paper.

  11. EECBG Success Story: Atlanta Suburb Greases the Path to Savings with Biodiesel

    Energy.gov [DOE]

    Downtown Smyrna, Georgia is using $184,000 of the city’s $208,000 in Energy Efficiency and Conservation Block Grant funding to create space for two 55-gallon processors that will turn cooking oil into biodiesel. Learn more.

  12. EECBG Success Story: In Savannah, Georgia, Even the Data is Green...

    Energy Saver

    thanks to their investment in biodiesel. | Photo by Ken Cook EECBG Success Story: Atlanta Suburb Greases the Path to Savings with Biodiesel EECBG Success Story: How Elyria, ...

  13. Atlanta Survey

    Energy Information Administration (EIA) (indexed site)

    Number of Fleets . . . . . . . . . . . . . . . 3,589 2,569 651 369 SIC Codes Ag.For.Fish. . . . . . . . . . . . . . . . . 140 65 31 Q Mining . . . . . . . . . . . . . . . . . ....

  14. Georgia Natural Gas Underground Storage Injections All Operators...

    Annual Energy Outlook

    Injections All Operators (Million Cubic Feet) Georgia Natural Gas Underground Storage Injections All Operators (Million Cubic Feet) Decade Year-0 Year-1 Year-2 Year-3 Year-4 Year-5 ...

  15. Johnson County, Georgia: Energy Resources | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    Hide Map This article is a stub. You can help OpenEI by expanding it. Johnson County is a county in Georgia. Its FIPS County Code is 167. It is classified as...

  16. Mitchell County, Georgia: Energy Resources | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    Hide Map This article is a stub. You can help OpenEI by expanding it. Mitchell County is a county in Georgia. Its FIPS County Code is 205. It is classified as...

  17. In Savannah, Georgia, Even the Data is Green

    Office of Energy Efficiency and Renewable Energy (EERE)

    Savannah, Georgia, used an Energy Efficiency and Conservation Block Grant (EECBG) to relocate its Information Technology Data Center. As a result, the city is slated to save several hundred thousand dollars a year.

  18. FUPWG Meeting Agenda - Jekyll Island, Georgia | Department of...

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    FUPWG Meeting Agenda - Jekyll Island, Georgia Logo for the FUPWG Spring 2012 meeting showing a crane, a lake, and wind turbines. The logo reads: Preserving our future with energy ...

  19. Central Georgia EMC- Residential Energy Efficiency Rebate Program

    Energy.gov [DOE]

    Central Georgia Electric Member Corporation (CGEMC) offers rebates for residential customers to increase the energy efficiency of existing homes or to build new energy efficient homes.  This year,...

  20. Stewart County, Georgia: Energy Resources | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    Hide Map This article is a stub. You can help OpenEI by expanding it. Stewart County is a county in Georgia. Its FIPS County Code is 259. It is classified as...

  1. Georgia Natural Gas LNG Storage Net Withdrawals (Million Cubic...

    Gasoline and Diesel Fuel Update

    Net Withdrawals (Million Cubic Feet) Georgia Natural Gas LNG Storage Net Withdrawals (Million Cubic Feet) Decade Year-0 Year-1 Year-2 Year-3 Year-4 Year-5 Year-6 Year-7 Year-8 ...

  2. Georgia Natural Gas LNG Storage Withdrawals (Million Cubic Feet...

    Gasoline and Diesel Fuel Update

    Withdrawals (Million Cubic Feet) Georgia Natural Gas LNG Storage Withdrawals (Million Cubic Feet) Decade Year-0 Year-1 Year-2 Year-3 Year-4 Year-5 Year-6 Year-7 Year-8 Year-9 ...

  3. Georgia Natural Gas LNG Storage Additions (Million Cubic Feet...

    Annual Energy Outlook

    Additions (Million Cubic Feet) Georgia Natural Gas LNG Storage Additions (Million Cubic Feet) Decade Year-0 Year-1 Year-2 Year-3 Year-4 Year-5 Year-6 Year-7 Year-8 Year-9 1980's ...

  4. Tift County, Georgia: Energy Resources | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    Its FIPS County Code is 277. It is classified as ASHRAE 169-2006 Climate Zone Number 3 Climate Zone Subtype A. Registered Energy Companies in Tift County, Georgia Biomass...

  5. Floyd County, Georgia: Energy Resources | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    Hide Map This article is a stub. You can help OpenEI by expanding it. Floyd County is a county in Georgia. Its FIPS County Code is 115. It is classified as ASHRAE...

  6. Murray County, Georgia: Energy Resources | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    Hide Map This article is a stub. You can help OpenEI by expanding it. Murray County is a county in Georgia. Its FIPS County Code is 213. It is classified as ASHRAE...

  7. Georgia Natural Gas Input Supplemental Fuels (Million Cubic Feet...

    Energy Information Administration (EIA) (indexed site)

    Input Supplemental Fuels (Million Cubic Feet) Georgia Natural Gas Input Supplemental Fuels (Million Cubic Feet) Decade Year-0 Year-1 Year-2 Year-3 Year-4 Year-5 Year-6 Year-7 ...

  8. Jackson County, Georgia: Energy Resources | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    Hide Map This article is a stub. You can help OpenEI by expanding it. Jackson County is a county in Georgia. Its FIPS County Code is 157. It is classified as...

  9. Miller County, Georgia: Energy Resources | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    Hide Map This article is a stub. You can help OpenEI by expanding it. Miller County is a county in Georgia. Its FIPS County Code is 201. It is classified as ASHRAE...

  10. Wheeler County, Georgia: Energy Resources | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    Hide Map This article is a stub. You can help OpenEI by expanding it. Wheeler County is a county in Georgia. Its FIPS County Code is 309. It is classified as...

  11. Taylor County, Georgia: Energy Resources | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    Hide Map This article is a stub. You can help OpenEI by expanding it. Taylor County is a county in Georgia. Its FIPS County Code is 269. It is classified as ASHRAE...

  12. Lee County, Georgia: Energy Resources | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    Hide Map This article is a stub. You can help OpenEI by expanding it. Lee County is a county in Georgia. Its FIPS County Code is 177. It is classified as ASHRAE...

  13. Richmond County, Georgia: Energy Resources | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    Hide Map This article is a stub. You can help OpenEI by expanding it. Richmond County is a county in Georgia. Its FIPS County Code is 245. It is classified as...

  14. Georgia Total Electric Power Industry Net Summer Capacity, by...

    Energy Information Administration (EIA) (indexed site)

    Georgia" "Energy Source",2006,2007,2008,2009,2010 "Fossil",28238,28096,28078,28103,28087 " Coal",13438,13275,13256,13211,13230 " Petroleum",2182,2169,2187,2188,2189 " Natural ...

  15. City of Palmetto, Georgia (Utility Company) | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    Place: Georgia Phone Number: (770) 463-3322 Website: citypalmetto.comindex.aspx?ni Outage Hotline: (770) 463-3322 References: EIA Form EIA-861 Final Data File for 2010 -...

  16. Georgia Total Electric Power Industry Net Generation, by Energy...

    Energy Information Administration (EIA) (indexed site)

    Georgia" "Energy Source",2006,2007,2008,2009,2010 "Fossil",100299,107165,99661,90634,97823 " Coal",86504,90298,85491,69478,73298 " Petroleum",834,788,742,650,641 " Natural ...

  17. Henry County, Georgia: Energy Resources | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    Hide Map This article is a stub. You can help OpenEI by expanding it. Henry County is a county in Georgia. Its FIPS County Code is 151. It is classified as ASHRAE...

  18. Webster County, Georgia: Energy Resources | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    Hide Map This article is a stub. You can help OpenEI by expanding it. Webster County is a county in Georgia. Its FIPS County Code is 307. It is classified as...

  19. Montgomery County, Georgia: Energy Resources | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    Hide Map This article is a stub. You can help OpenEI by expanding it. Montgomery County is a county in Georgia. Its FIPS County Code is 209. It is classified as...

  20. Pike County, Georgia: Energy Resources | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    Hide Map This article is a stub. You can help OpenEI by expanding it. Pike County is a county in Georgia. Its FIPS County Code is 231. It is classified as ASHRAE...

  1. Evans County, Georgia: Energy Resources | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    Hide Map This article is a stub. You can help OpenEI by expanding it. Evans County is a county in Georgia. Its FIPS County Code is 109. It is classified as ASHRAE...

  2. White County, Georgia: Energy Resources | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    Hide Map This article is a stub. You can help OpenEI by expanding it. White County is a county in Georgia. Its FIPS County Code is 311. It is classified as ASHRAE...

  3. Smart Manufacturing Institute Industry Day Workshop Proceedings

    Office of Energy Efficiency and Renewable Energy (EERE)

    AMO hosted an Industry Day workshop to explain the concept, vision, and technology needs associated with support for a Clean Energy Manufacturing Innovation Institute on Smart Manufacturing. The workshop was held on February 25, 2015 at the Georgia Tech Hotel & Conference Center in Atlanta, GA.

  4. Making it pay in Athens, GA

    SciTech Connect

    Malloy, M.G.

    1997-04-01

    The materials recovery facility (MRF) in Athens, GA, is a well-fed recycling facility. But, if the local government has its way, it will be even better fed in the near future. The Athens-Clarke County (ACC) regional municipality in which the facility resides has a put-or-pay contract with the plant`s owner/operator, under which the more it feeds the MRF, the more money it receives in return, through the sale of recycled end products. The ACC Solid Waste Department uses a volume-based waste collection system that encourages residents to recycle--the more they recycle, the less trash they have to put out, and the less they pay each month. The Athens facility, which will be a featured site tour at next month`s WasteExpo `97 in nearby Atlanta, had its ground-breaking two years ago, in April 1995. ACC is responsible for delivering material--or seeing that recyclables are delivered--to the MRF, which is owned and operated by Resource Recovery Systems (RRS, Centerbrook, Conn.). Over the past year, ACC has stepped up various incentives for businesses to recycle and send their recyclables to the facility, including instituting pilot programs for commercial interests that offer them versions of volume-based collection similar to that done by residents.

  5. Presentation_GL

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    OCTOBER 17, 2016 - Germantown, MD AMM Workshop Self-Consolidating Concrete for SC Modular Structures Monday, OCTOBER 17, 2016 - Germantown, MD Russell Gentry (PI) Kimberly Kurtis (Co-PI) Larry Kahn (Co-PI) School of Civil and Environmental Engineering (CEE) - Georgia Institute of Technology Giovanni Loreto (Researcher/Presenter) College of Architecture and Construction Management - Kennesaw State University (Atlanta, GA) Bojan Petrovic (Co-PI) Nuclear and Radiological Engineering) - Georgia

  6. PROJECT PROFILE: Giant Leap Technologies (CSP: COLLECTS) | Department of

    Energy Saver

    Georgia Tech Research Corp. (PVRD) PROJECT PROFILE: Georgia Tech Research Corp. (PVRD) Project Name: Pushing the Efficiency Limit of Low-Cost, Industrially-Relevant Silicon Solar Cells by Advancing Cell Structures and Technology Innovations Funding Opportunity: PVRD SunShot Subprogram: Photovoltaics Location: Atlanta, GA SunShot Award Amount: $1,125,000 Awardee Cost Share: $125,000 Project Investigator: Ajeet Rohatgi This project is advancing manufacturable silicon cell technologies to above 22%

  7. Wheego Electric Cars | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    Wheego Electric Cars Jump to: navigation, search Name: Wheego Electric Cars Place: Atlanta, Georgia Zip: 30318 Sector: Vehicles Product: Atlanta-based Wheego has designed compact...

  8. Sustainable World Capital | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    World Capital Jump to: navigation, search Name: Sustainable World Capital Place: Atlanta, Georgia Zip: 30326 Product: Atlanta-based firm that connects companies with institutional...

  9. Radiance Solar | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    Radiance Solar Jump to: navigation, search Name: Radiance Solar Place: Atlanta, Georgia Zip: 30318 Product: Commercial and residential PV installer based in Atlanta. Coordinates:...

  10. QA Corporate Board Meeting - November 2008 | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    Meeting Location: Renaissance Concourse Hotel Atlanta Airport, One Hartsfield Centre, Parkway Atlanta, Georgia 30354 Room: Shannon One and Two Draft Agenda for November 13, 2008 ...

  11. Bacon County, Georgia ASHRAE 169-2006 Climate Zone | Open Energy...

    OpenEI (Open Energy Information) [EERE & EIA]

    Bacon County, Georgia ASHRAE 169-2006 Climate Zone Jump to: navigation, search County Climate Zone Place Bacon County, Georgia ASHRAE Standard ASHRAE 169-2006 Climate Zone Number...

  12. Ben Hill County, Georgia ASHRAE 169-2006 Climate Zone | Open...

    OpenEI (Open Energy Information) [EERE & EIA]

    Ben Hill County, Georgia ASHRAE 169-2006 Climate Zone Jump to: navigation, search County Climate Zone Place Ben Hill County, Georgia ASHRAE Standard ASHRAE 169-2006 Climate Zone...

  13. Barrow County, Georgia ASHRAE 169-2006 Climate Zone | Open Energy...

    OpenEI (Open Energy Information) [EERE & EIA]

    Barrow County, Georgia ASHRAE 169-2006 Climate Zone Jump to: navigation, search County Climate Zone Place Barrow County, Georgia ASHRAE Standard ASHRAE 169-2006 Climate Zone Number...

  14. Wood energy in Georgia: a five-year progress report

    SciTech Connect

    Not Available

    1982-01-01

    An increasing number of industrial plants and public and residential facilities in Georgia are using wood, Georgia's greatest renewable energy source, to replace gas, oil, coal, and electricity. All wood systems described in this report are or will soon be in operation in schools, prisons, hospitals, and other state facilities, and are producing substantial financial savings. The economic values from increased markets and jobs are important in all areas of the state, with total benefits projected at $2.9 million a year for state taxpayers. 2 figures.

  15. SREL Reprint #3129

    U.S. Department of Energy (DOE) - all webpages (Extended Search)

    9 Outer Membrane-Associated Serine Protease Involved in Adhesion of Shewanella oneidensis to Fe(III) Oxides Justin L. Burns1, Brian R. Ginn1, David J. Bates1, Steven N. Dublin2, Jeanette V. Taylor2, Robert P. Apkarian2, Samary Amaro-Garcia3, Andrew L. Neal3, and Thomas J. Dichristina1 1School of Biology, Georgia Institute of Technology, Atlanta, GA 30332 2Robert P. Apkarian Integrated Electron Microscopy Core Facility, Emory University, Atlanta, GA 30322 3Savannah River Ecology Laboratory, The

  16. Energy Department Announces Winners of 2015 Race to Zero Student...

    Energy.gov [DOE] (indexed site)

    ... Georgia Institute of Technology, Atlanta, Georgia Ryerson University-Team DAS Haus, Toronto, Ontario, Canada University of California, Berkeley, Berkeley, California Virginia Tech, ...

  17. Microsoft Word - DOE-ID-14-045 Georgia Institute of Tech. ...

    U.S. Department of Energy (DOE) - all webpages (Extended Search)

    A. Project Title: Zeolite Membranes for KryptonXenon Separation from Spent Nuclear Fuel Reprocessing Off-Gas - Georgia Tech Research Corporation SECTION B. Project Description ...

  18. Microsoft Word - DOE-ID-14-043 Georgia Institute of Tech. _1...

    U.S. Department of Energy (DOE) - all webpages (Extended Search)

    Georgia Institute of Technology will conduct laboratory scale research on metal ion adsorption from aqueous solutions to provide a better understanding of the performance of...

  19. General Atomics (GA) | Princeton Plasma Physics Lab

    U.S. Department of Energy (DOE) - all webpages (Extended Search)

    General Atomics (GA) Subscribe to RSS - General Atomics (GA) General Atomics Image: General Atomics (GA) The Scorpion's Strategy: "Catch and Subdue" Read more about The Scorpion's...

  20. Secretary Bodman Announces Federal Risk Insurance for Nuclear Power Plants

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    & Touts Robust Economy | Department of Energy Federal Risk Insurance for Nuclear Power Plants & Touts Robust Economy Secretary Bodman Announces Federal Risk Insurance for Nuclear Power Plants & Touts Robust Economy August 4, 2006 - 8:42am Addthis ATLANTA, GA - After touring Georgia Power and speaking to its employees, U.S. Department of Energy (DOE) Secretary Samuel W. Bodman today announced completion of the final rule that establishes the process for utility companies building

  1. Smart Manufacturing Institute Industry Day Workshop | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    Workshops » Smart Manufacturing Institute Industry Day Workshop Smart Manufacturing Institute Industry Day Workshop February 27, 2015 - 1:51pm Addthis AMO hosted an Industry Day workshop to explain the concept, vision, and technology needs associated with support for a Clean Energy Manufacturing Innovation Institute on Smart Manufacturing. The workshop was held on February 25, 2015 at the Georgia Tech Hotel & Conference Center in Atlanta, GA. The Industry Day provided an opportunity for

  2. PowerPoint Presentation

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    Robust, Cost-Effective Heat Exchangers for 800 o C Operation with Supercritical CO 2 Ken H. Sandhage, Reilly Professor, School of Materials Engineering, Purdue University, W. Lafayette, IN energy.gov/sunshot energy.gov/sunshot CSP Program Summit 2016 2 The Team Principal Investigators: Ken H. Sandhage School of Materials Engineering Purdue University, W. Lafayette, IN Devesh Ranjan, Asegun Henry School of Mechanical Engineering Georgia Institute of Technology, Atlanta, GA Mark H. Anderson

  3. sRecovery Act: Geologic Characterization of the South Georgia Rift Basin for Source Proximal CO2 Storage

    SciTech Connect

    Waddell, Michael

    2014-09-30

    the J/TR section based on neutron log porosity values. The only zones in Rizer #1 that appear to be porous were fractured diabase units where saline formation water was flowing into the borehole. Two geocellular models were created for the SC and GA study area. Flow simulation modeling was performed on the SC data set. The injection simulation used the newly acquired basin data as well as the Petrel 3-D geologic model that included geologic structure. Due to the new basin findings as a result of the newly acquired data, during phase two of the modeling the diabase unit was used as reservoir and the sandstone units were used as caprock. Conclusion are: 1) the SGR basin is composed of numerous sub-basins, 2) this study only looked at portions of two sub-basins, 3) in SC, 30 million tonnes of CO2 can be injected into the diabase units if the fracture network is continuous through the units, 4) due to the severity of the faulting there is no way of assuring the injected CO2 will not migrate upward into the overlying Coastal Plain aquifers, 5) in Georgia there appears to porous zones in the J/TR sandstones, 6) as in SC there is faulting in the sub-basin and the seismic suggest the faulting extends upward into the Coastal Plain making that area not suitable for CO2 sequestration, 7) the complex faulting observed at both study areas appear to be associated with transfer fault zones (Heffner 2013), if sub-basins in the Georgia portion of the SGR basin can be located that are far away from the transfer fault zones there is a strong possibility of sequestering CO2 in these areas, and 9) the SGR basin covers area in three states and this project only studied two small areas so there is enormous potential for CO2 sequestration in other portions the basin and further research needs to be done to find these areas.

  4. Investigation of the GaN-on-GaAs interface for vertical power device applications

    SciTech Connect

    Mreke, Janina Uren, Michael J.; Kuball, Martin; Novikov, Sergei V.; Foxon, C. Thomas; Hosseini Vajargah, Shahrzad; Wallis, David J.; Humphreys, Colin J.; Haigh, Sarah J.; Al-Khalidi, Abdullah; Wasige, Edward; Thayne, Iain

    2014-07-07

    GaN layers were grown onto (111) GaAs by molecular beam epitaxy. Minimal band offset between the conduction bands for GaN and GaAs materials has been suggested in the literature raising the possibility of using GaN-on-GaAs for vertical power device applications. I-V and C-V measurements of the GaN/GaAs heterostructures however yielded a rectifying junction, even when both sides of the junction were heavily doped with an n-type dopant. Transmission electron microscopy analysis further confirmed the challenge in creating a GaN/GaAs Ohmic interface by showing a large density of dislocations in the GaN layer and suggesting roughening of the GaN/GaAs interface due to etching of the GaAs by the nitrogen plasma, diffusion of nitrogen or melting of Ga into the GaAs substrate.

  5. Georgia Natural Gas Number of Commercial Consumers (Number of Elements)

    Energy Information Administration (EIA) (indexed site)

    Commercial Consumers (Number of Elements) Georgia Natural Gas Number of Commercial Consumers (Number of Elements) Decade Year-0 Year-1 Year-2 Year-3 Year-4 Year-5 Year-6 Year-7 Year-8 Year-9 1980's 94 98,809 102,277 106,690 1990's 108,295 109,659 111,423 114,889 117,980 120,122 123,200 123,367 126,050 225,020 2000's 128,275 130,373 128,233 129,867 128,923 128,389 127,843 127,832 126,804 127,347 2010's 124,759 123,454 121,243 126,060 122,578 123,307 - = No Data Reported; -- = Not Applicable; NA =

  6. Georgia Natural Gas Number of Industrial Consumers (Number of Elements)

    Energy Information Administration (EIA) (indexed site)

    Industrial Consumers (Number of Elements) Georgia Natural Gas Number of Industrial Consumers (Number of Elements) Decade Year-0 Year-1 Year-2 Year-3 Year-4 Year-5 Year-6 Year-7 Year-8 Year-9 1980's 3 3,034 3,144 3,079 1990's 3,153 3,124 3,186 3,302 3,277 3,261 3,310 3,310 3,262 5,580 2000's 3,294 3,330 3,219 3,326 3,161 3,543 3,053 2,913 2,890 2,254 2010's 2,174 2,184 2,112 2,242 2,481 2,548 - = No Data Reported; -- = Not Applicable; NA = Not Available; W = Withheld to avoid disclosure of

  7. Georgia Natural Gas Number of Residential Consumers (Number of Elements)

    Energy Information Administration (EIA) (indexed site)

    Residential Consumers (Number of Elements) Georgia Natural Gas Number of Residential Consumers (Number of Elements) Decade Year-0 Year-1 Year-2 Year-3 Year-4 Year-5 Year-6 Year-7 Year-8 Year-9 1980's 1,190 1,237,201 1,275,128 1,308,972 1990's 1,334,935 1,363,723 1,396,860 1,430,626 1,460,141 1,495,992 1,538,458 1,553,948 1,659,730 1,732,865 2000's 1,680,749 1,737,850 1,735,063 1,747,017 1,752,346 1,773,121 1,726,239 1,793,650 1,791,256 1,744,934 2010's 1,740,587 1,740,006 1,739,543 1,805,425

  8. Georgia Natural Gas Pipeline and Distribution Use (Million Cubic Feet)

    Energy Information Administration (EIA) (indexed site)

    (Million Cubic Feet) Georgia Natural Gas Pipeline and Distribution Use (Million Cubic Feet) Decade Year-0 Year-1 Year-2 Year-3 Year-4 Year-5 Year-6 Year-7 Year-8 Year-9 1990's 7,973 7,606 8,846 2000's 5,636 7,411 7,979 7,268 6,235 5,708 6,092 5,188 5,986 6,717 2010's 8,473 10,432 10,509 7,973 6,977 7,296 - = No Data Reported; -- = Not Applicable; NA = Not Available; W = Withheld to avoid disclosure of individual company data. Release Date: 10/31/2016 Next Release Date: 11/30/2016 Referring

  9. Georgia Natural Gas Total Consumption (Million Cubic Feet)

    Energy Information Administration (EIA) (indexed site)

    Total Consumption (Million Cubic Feet) Georgia Natural Gas Total Consumption (Million Cubic Feet) Decade Year-0 Year-1 Year-2 Year-3 Year-4 Year-5 Year-6 Year-7 Year-8 Year-9 1990's 371,376 368,579 337,576 2000's 413,845 351,109 383,546 379,761 394,986 412,560 420,469 441,107 425,043 462,799 2010's 530,030 522,897 615,771 625,283 652,408 692,267 - = No Data Reported; -- = Not Applicable; NA = Not Available; W = Withheld to avoid disclosure of individual company data. Release Date: 10/31/2016

  10. Georgia Natural Gas % of Total Residential Deliveries (Percent)

    Energy Information Administration (EIA) (indexed site)

    % of Total Residential Deliveries (Percent) Georgia Natural Gas % of Total Residential Deliveries (Percent) Decade Year-0 Year-1 Year-2 Year-3 Year-4 Year-5 Year-6 Year-7 Year-8 Year-9 1990's 2.33 2.18 2.36 2.42 2.30 2.38 2.09 2000's 2.82 2.51 2.59 2.56 2.60 2.58 2.52 2.37 2.44 2.48 2010's 2.90 2.40 2.35 2.48 2.64 2.56 - = No Data Reported; -- = Not Applicable; NA = Not Available; W = Withheld to avoid disclosure of individual company data. Release Date: 10/31/2016 Next Release Date: 11/30/2016

  11. Distribution automation pilot project at Georgia Power Company. Final report

    SciTech Connect

    Hall, J.M.

    1997-12-01

    This report includes a Benefit-Cost Study for Distribution Automation (DA) at Georgia Power Company, an Evaluation of two communication systems for Distribution Automation, and Development and Evaluation of a standards-based interface between an AM/FM system and SCADA. The Benefit-Cost Study addresses the functional requirements and performance of the major Distribution Automation functions under GPC`s conditions. Five implementation scenarios for Distribution Automation are analyzed. The performance of the DA functions is simulated for four prototype GPC substations in the Carrollton and Tucker areas. The results of the simulation are extrapolated for the entire GPC distribution system. A number of reliability related functions along with real-time modeling and volt/var control functions are recommended for implementation at GPC. GPC has installed two pilot communication systems for Distribution Automation. Both pilot systems use proprietary radio technologies for communications with pole-top power system devices and customer meters. One of these systems, in the Carrollton area, uses a Metricom{trademark} UtiliNet{trademark} radio system, and the other, in the Tucker area, uses a CellNet{trademark} Data Systems, Inc. CellNet radio system. The performance of these two systems is described and evaluated in the project. The advantages and disadvantages of the communication systems for the recommended distribution automation system at GPC are analyzed. A transfer format from a mapping and facilities database to a SCADA database for the Georgia Power Company was developed and tested for the project. The mapping and facilities database is implemented as an Oracle database in the ARC/Info AM/FM/GIS application by ESRI, and the SCADA database is implemented on the OASyS 5.0 SCADA platform provided by Valmet Automation. The National Transfer Format (NTF) is the vehicle for the transfer of data from the GIS to the SCADA system.

  12. Cost-Effectiveness of ASHRAE Standard 90.1-2010 for the State of Georgia

    SciTech Connect

    Hart, Philip R.; Rosenberg, Michael I.; Xie, YuLong; Zhang, Jian; Richman, Eric E.; Elliott, Douglas B.; Loper, Susan A.; Myer, Michael

    2013-11-01

    Moving to the ANSI/ASHRAE/IES Standard 90.1-2010 version from the Base Code (90.1-2007) is cost-effective for all building types and climate zones in the State of Georgia.

  13. EECBG Success Story: Georgia County Turning Industrial and Farm Waste Into Big Energy Savings

    Energy.gov [DOE]

    Gwinnett County, Georgia built a "Gas to Energy" system at the city water resources center that will reduce operational costs and sanitary sewer overflows, thanks to an Energy Efficiency and Conservation Block Grant (EECBG). Learn more.

  14. Georgia County Turning Industrial and Farm Waste Into Big Energy Savings

    Energy.gov [DOE]

    Thanks to a Department of Energy Recovery Act grant, Gwinnett County, Georgia is taking some of the grossest stuff on earth and turning it into some of the greenest stuff on earth.

  15. EA-1255: Project Partnership Transportation of Foreign-Owned Enriched Uranium from the Republic of Georgia

    Office of Energy Efficiency and Renewable Energy (EERE)

    This EA evaluates the environmental impacts for the proposal to transport 5.26 kilograms of enriched uranium-23 5 in the form of nuclear fuel, from the Republic of Georgia to the United Kingdom.

  16. Wind Powering America: A New Wind Economy for South Carolina and Georgia Final Report

    SciTech Connect

    SC Energy Office: Southern Alliance for Clean Energy

    2013-02-12

    This report describes all activities undertaken by the Southern Alliance for Clean Energy (SACE) in cooperation with the states of Georgia and South Carolina to develop a public outreach program, including shared analytical and reference tools and other technical assistance.

  17. Sec. Moniz to Georgia, Energy Department Scheduled to Close on Loan

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    Guarantees to Construct New Nuclear Power Plant Reactors | Department of Energy to Georgia, Energy Department Scheduled to Close on Loan Guarantees to Construct New Nuclear Power Plant Reactors Sec. Moniz to Georgia, Energy Department Scheduled to Close on Loan Guarantees to Construct New Nuclear Power Plant Reactors February 19, 2014 - 1:30pm Addthis Washington D.C. - Building on President Obama's State of the Union address to Congress and the American public last month, U.S. Secretary of

  18. Georgia Regional High School Science Bowl | U.S. DOE Office of Science (SC)

    Office of Science (SC)

    Georgia Regional High School Science Bowl National Science Bowl® (NSB) NSB Home About Regional Competitions Rules, Forms, and Resources High School Regionals Middle School Regionals National Finals Volunteers Key Dates Frequently Asked Questions News Media Contact Us WDTS Home Contact Information National Science Bowl® U.S. Department of Energy SC-27/ Forrestal Building 1000 Independence Ave., SW Washington, DC 20585 E: Email Us High School Regionals Georgia Regional High School Science Bowl

  19. Georgia Regional Middle School Science Bowl | U.S. DOE Office of Science

    Office of Science (SC)

    (SC) Georgia Regional Middle School Science Bowl National Science Bowl® (NSB) NSB Home About Regional Competitions Rules, Forms, and Resources High School Regionals Middle School Regionals National Finals Volunteers Key Dates Frequently Asked Questions News Media Contact Us WDTS Home Contact Information National Science Bowl® U.S. Department of Energy SC-27/ Forrestal Building 1000 Independence Ave., SW Washington, DC 20585 E: Email Us Middle School Regionals Georgia Regional Middle School

  20. GEORGIA TECH ENERGY AND SUSTAINABILITY SERVICES (GTESS) ANSI-Accredited Standards Developer

    Energy.gov [DOE] (indexed site)

    GEORGIA TECH ENERGY AND SUSTAINABILITY SERVICES (GTESS) ANSI-Accredited Standards Developer Clarification of Intent: SEP energy management standards Administrator: Holly Grell-Lawe (holly.lawe@innovate.gatech.edu) When originating or replying, please respond to the Administrator Updated 28 September 2015 BACKGROUND Georgia Tech Energy and Sustainability Services (GTESS) is an American National Standards Institute (ANSI) accredited standards developer, which developed ANSI/MSE 50021, ANSI/MSE

  1. GA SNC Solar | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    GA-SNC Solar Place: Nevada Sector: Solar Product: Nevada-based PV project developer and joint venture of GA-Solar North America and Sierra Nevada Corp. References: GA-SNC...

  2. Search for: All records | SciTech Connect

    Office of Scientific and Technical Information (OSTI)

    Photon Source, Argonne, IL (United States) Atlanta Regional Office, Atlanta, GA (United States) Atmospheric System Research Bartlesville Project Office, OK (United...

  3. Search for: All records | SciTech Connect

    Office of Scientific and Technical Information (OSTI)

    Complex - NNSA Albuquerque Operations Office, Albuquerque, NM (United States) Amarillo ... IL (United States) Atlanta Regional Office, Atlanta, GA (United States) Atmospheric ...

  4. Search for: All records | SciTech Connect

    Office of Scientific and Technical Information (OSTI)

    Photon Source, Argonne, IL (United States) Atlanta Regional Office, Atlanta, GA (United States) Atmospheric System Research Bartlesville Project Office, OK (United ...

  5. Search for: All records | SciTech Connect

    Office of Scientific and Technical Information (OSTI)

    Laboratory (ANL), Argonne, IL (United States) Argonne National Laboratory-Advanced Photon Source, Argonne, IL (United States) Atlanta Regional Office, Atlanta, GA (United ...

  6. Search for: All records | SciTech Connect

    Office of Scientific and Technical Information (OSTI)

    IL (United States) Atlanta Regional Office, Atlanta, GA (United States) Atmospheric System Research Bartlesville Project Office, OK (United States) Battelle Memorial...

  7. Liquefied Petroleum Gas (LPG) storage facility study, Fort Gordon, Georgia. Final report

    SciTech Connect

    1992-09-01

    Fort Gordon currently purchases natural gas from Atlanta Gas Light Company under a rate schedule for Large Commercial Interruptible Service. This offers a very favorable rate for `interruptible` gas service, however, Fort Gordon must maintain a base level of `firm gas`, purchased at a significantly higher cost, to assure adequate natural gas supplies during periods of curtailment to support family housing requirements and other single fuel users. It is desirable to provide a standby fuel source to meet the needs of family housing and other single fuel users and eliminate the extra costs for the firm gas commitment to Atlanta Gas Light Company. Therefore, a propane-air standby fuel system is proposed to be installed at Fort Gordon.

  8. Liquefied Petroleum Gas (LPG) storage facility study Fort Gordon, Georgia. Final report

    SciTech Connect

    1992-09-01

    Fort Gordon currently purchases natural gas from Atlanta Gas Light Company under a rate schedule for Large Commercial Interruptible Service. This offers a very favorable rate for `interruptible` gas service, however, Fort Gordon must maintain a base level of `firm gas`, purchased at a significantly higher cost, to assure adequate natural gas supplies during periods of curtailment to support family housing requirements and other single fuel users. It is desirable to provide a standby fuel source to meet the needs of family housing and other single fuel users and eliminate the extra costs for the firm gas commitment to Atlanta Gas Light Company. Therefore, a propane-air standby fuel system is proposed to be installed at Fort Gordon.

  9. Georgia Natural Gas Pipeline and Distribution Use Price (Dollars per

    Energy Information Administration (EIA) (indexed site)

    Thousand Cubic Feet) Price (Dollars per Thousand Cubic Feet) Georgia Natural Gas Pipeline and Distribution Use Price (Dollars per Thousand Cubic Feet) Decade Year-0 Year-1 Year-2 Year-3 Year-4 Year-5 Year-6 Year-7 Year-8 Year-9 1960's 0.19 0.19 0.19 1970's 0.20 0.22 0.23 0.25 0.28 0.32 0.36 0.67 0.90 1.35 1980's 2.10 2.78 3.11 3.22 3.26 3.23 3.32 2.50 2.41 2.69 1990's 2.19 2.08 2.08 2.24 2.14 1.93 2.62 3.09 2.48 2.18 2000's 3.30 4.57 NA -- -- -- - = No Data Reported; -- = Not Applicable; NA

  10. Ecological investigation of a hazardous waste site, Warner Robins, Georgia

    SciTech Connect

    Wade, M.C. ); Billig, P. )

    1993-01-01

    Zone 1, Robins Air Force Base, Georgia, has been designated a National Priorities List Site by the US Environmental Protection Agency. The Remedial Investigation for Zone 1 recommended a quantitative analysis of ecological risk. To accomplish this task a characterization of the bottomland hardwood forest ecosystem present on the base was required. This ecological characterization included the study of hydrology, aquatic and wildlife biology, and wetlands ecology where potential impacts were in question. In addition, a suitable reference area was studied. The hydrologic investigation consisted primarily of the installation of water level recorders and staff gauges, collection of surface water data, installation of piezometers and collection of groundwater data, and the collection of rainfall data. The aquatic biology investigation centered around the sampling of benthic macroinvertebrate communities, bioassay toxicity tests for surface water and sediment, fish sampling, aquatic macrophyte collection, macrophyte collection, and emergent and free-floating plant collection. The wildlife biology investigation focused on a breeding bird survey. The wetlands ecology investigation comprised the collection of soil and vegetation samples and using the Wetland Evaluation Technique (WET) to assess the functions and values of the wetlands present.

  11. GaInNAs laser gain

    SciTech Connect

    CHOW,WENG W.; JONES,ERIC D.; MODINE,NORMAND A.; KURTZ,STEVEN R.; ALLERMAN,ANDREW A.

    2000-05-23

    The optical gain spectra for GaInNAs/GaAs quantum wells are computed using a microscopic laser theory. From these spectra, the peak gain and carrier radiative decay rate as functions of carrier density are determined. These dependences allow the study of the lasing threshold current density of GaInNAs/GaAs quantum well structures.

  12. GaAs, AlGaAs and InGaP Tunnel Junctions for Multi-Junction Solar Cells Under Concentration: Resistance Study

    SciTech Connect

    Wheeldon, Jeffrey F.; Valdivia, Christopher E.; Walker, Alex; Kolhatkar, Gitanja; Hall, Trevor J.; Hinzer, Karin; Masson, Denis; Riel, Bruno; Fafard, Simon; Jaouad, Abdelatif; Turala, Artur; Ares, Richard; Aimez, Vincent

    2010-10-14

    The following four TJ designs, AlGaAs/AlGaAs, GaAs/GaAs, AlGaAs/InGaP and AlGaAs/GaAs are studied to determine minimum doping concentration to achieve a resistance of <10{sup -4} {omega}{center_dot}cm{sup 2} and a peak tunneling current suitable for MJ solar cells up to 1500-suns concentration (operating current of 21 A/cm{sup 2}). Experimentally calibrated numerical models are used to determine how the resistance changes as a function of doping concentration. The AlGaAs/GaAs TJ design is determined to require the least doping concentration to achieve the specified resistance and peak tunneling current, followed by the GaAs/GaAs, and AlGaAs/AlGaAs TJ designs. The AlGaAs/InGaP TJ design can only achieve resistances >5x10{sup -4} {omega}cm{sup 2}.

  13. The Economic Impact of the Savannah River Site on the Adjacent Five Counties in South Carolina and Georgia

    U.S. Department of Energy (DOE) - all webpages (Extended Search)

    Economic Impact of the Savannah River Site on Five Adjacent Counties in South Carolina and Georgia ____________________________________________________________________________________ i The Economic Impact of the Savannah River Site on Five Adjacent Counties in South Carolina and Georgia ____________________________________________________________________________________ ii ACKNOWLEDGEMENTS The O'Connell Center for Executive Development at the University of South Carolina-Aiken would like to

  14. General Atomics (GA) Fusion News: A New Spin on Understanding...

    U.S. Department of Energy (DOE) - all webpages (Extended Search)

    General Atomics (GA) Fusion News: A New Spin on Understanding Plasma Confinement American Fusion News Category: General Atomics (GA) Link: General Atomics (GA) Fusion News: A New ...

  15. Sakis Meliopoulos, Georgia Institute of Technology, PSERC webinar, 2/16/2016

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    Protection and Control of Systems with Converter Interfaced Generation Sakis Meliopoulos Georgia Power Distinguished Professor School of Electrical and Computer Engineering Georgia Institute of Technology sakis.m@gatech.edu PSERC Public Webinar February 16, 2016 2:00-3:00 p.m. Eastern Time (11:00-12:00 p.m. Pacific) If you plan to use the phone bridge, use the NEW number: 877-820-7831 (passcode: 965722#). Description: The protection of converter interfaced generation and associated circuits and

  16. New Whole-House Solutions Case Study: Pine Mountain Builders, Pine Mountain, Georgia

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    Pine Mountain Builders began working with Building America research partners IBACOS and Southface Energy Institute in 2005 to design energy-efficient homes for a green community of 140 homes in western Georgia. Their designs have yielded homes with HERS scores as low as 59, electric bills as low as $50 a month (or half the state average), and 30% energy savings compared to homes built to the Georgia state energy code. The thermal envelopes of Pine Mountain's homes are built to be airtight.

  17. Building Efficiency Technologies by Tomorrow’s Engineers and Researchers (BETTER) Capstone

    Energy.gov [DOE]

    Lead Performer: Georgia Institute of Technology – Atlanta, GAPartners:  -   Alphabet Energy – Hayward, CA  -   Alabama Heat Exchangers, AL  -   Advanced Renewable Energy  -   Emrgy Hydro – Atlanta,...

  18. CX-002603: Categorical Exclusion Determination

    Energy.gov [DOE]

    DeKalb County/Metro Atlanta Alternative Fuel ProjectCX(s) Applied: A1, A9Date: 12/10/2009Location(s): Atlanta, GeorgiaOffice(s): Energy Efficiency and Renewable Energy, National Energy Technology Laboratory

  19. CX-000340: Categorical Exclusion Determination

    Energy.gov [DOE]

    DeKalb County/Metro Atlanta Alternative Fuel ProjectCX(s) Applied: A1, A9Date: 12/10/2009Location(s): Atlanta, GeorgiaOffice(s): Energy Efficiency and Renewable Energy, National Energy Technology Laboratory

  20. Intense terahertz emission from molecular beam epitaxy-grown GaAs/GaSb(001)

    SciTech Connect

    Sadia, Cyril P.; Laganapan, Aleena Maria; Agatha Tumanguil, Mae; Estacio, Elmer; Somintac, Armando; Salvador, Arnel; Que, Christopher T.; Yamamoto, Kohji; Tani, Masahiko

    2012-12-15

    Intense terahertz (THz) electromagnetic wave emission was observed in undoped GaAs thin films deposited on (100) n-GaSb substrates via molecular beam epitaxy. GaAs/n-GaSb heterostructures were found to be viable THz sources having signal amplitude 75% that of bulk p-InAs. The GaAs films were grown by interruption method during the growth initiation and using various metamorphic buffer layers. Reciprocal space maps revealed that the GaAs epilayers are tensile relaxed. Defects at the i-GaAs/n-GaSb interface were confirmed by scanning electron microscope images. Band calculations were performed to infer the depletion region and electric field at the i-GaAs/n-GaSb and the air-GaAs interfaces. However, the resulting band calculations were found to be insufficient to explain the THz emission. The enhanced THz emission is currently attributed to a piezoelectric field induced by incoherent strain and defects.

  1. New GaInP/GaAs/GaInAs, Triple-Bandgap, Tandem Solar Cell for High-Efficiency Terrestrial Concentrator Systems

    SciTech Connect

    Kurtz, S.; Wanlass, M.; Kramer, C.; Young, M.; Geisz, J.; Ward, S.; Duda, A.; Moriarty, T.; Carapella, J.; Ahrenkiel, P.; Emery. K.; Jones, K.; Romero, M.; Kibbler, A.; Olson, J.; Friedman, D.; McMahon, W.; Ptak, A.

    2005-11-01

    GaInP/GaAs/GaInAs three-junction cells are grown in an inverted configuration on GaAs, allowing high quality growth of the lattice matched GaInP and GaAs layers before a grade is used for the 1-eV GaInAs layer. Using this approach an efficiency of 37.9% was demonstrated.

  2. Summary of Needs and Opportunities from the 2011 Residential Energy

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    Efficiency Stakeholders Meeting: Atlanta, Georgia -- March 16-18, 2011 | Department of Energy Needs and Opportunities from the 2011 Residential Energy Efficiency Stakeholders Meeting: Atlanta, Georgia -- March 16-18, 2011 Summary of Needs and Opportunities from the 2011 Residential Energy Efficiency Stakeholders Meeting: Atlanta, Georgia -- March 16-18, 2011 This summary report outlines needs and issues for increasing energy efficiency of new and existing U.S homes, as identified at the U.S

  3. Temperature coefficients for GaInP/GaAs/GaInNAsSb solar cells

    SciTech Connect

    Aho, Arto; Isoaho, Riku; Tukiainen, Antti; Polojärvi, Ville; Aho, Timo; Raappana, Marianna; Guina, Mircea

    2015-09-28

    We report the temperature coefficients for MBE-grown GaInP/GaAs/GaInNAsSb multijunction solar cells and the corresponding single junction sub-cells. Temperature-dependent current-voltage measurements were carried out using a solar simulator equipped with a 1000 W Xenon lamp and a three-band AM1.5D simulator. The triple-junction cell exhibited an efficiency of 31% at AM1.5G illumination and an efficiency of 37–39% at 70x real sun concentration. The external quantum efficiency was also measured at different temperatures. The temperature coefficients up to 80°C, for the open circuit voltage, the short circuit current density, and the conversion efficiency were determined to be −7.5 mV/°C, 0.040 mA/cm{sup 2}/°C, and −0.09%/°C, respectively.

  4. Alpha Renewable Energy | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    Renewable Energy Jump to: navigation, search Name: Alpha Renewable Energy Place: Atlanta, Georgia Sector: Biomass Product: Manufacturer of biomass wood gas stoves and standalone...

  5. Ajeetco | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    Ajeetco Jump to: navigation, search Name: Ajeetco Place: Atlanta, Georgia Product: Development of a polycrystalline film for PV. References: Ajeetco1 This article is a stub. You...

  6. Ethanol Capital Funding | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    Ethanol Capital Funding Jump to: navigation, search Name: Ethanol Capital Funding Place: Atlanta, Georgia Zip: 30328 Product: Provides funding for ethanol and biodiesel plants....

  7. C2 Biofuels | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    Jump to: navigation, search Name: C2 Biofuels Place: Atlanta, Georgia Product: Ethanol production from cellulose. Coordinates: 33.748315, -84.391109 Show Map Loading...

  8. DOE and Stakeholders Consider Best Approach to Major HVAC&R Research...

    Energy.gov [DOE] (indexed site)

    and Air-Conditioning Engineers (ASHRAE) in Atlanta, Georgia, on December 8, ... Dr. Xudong Wang, director of research at ASHRAE. As the next step toward launching the ...

  9. Fusion Institutions | U.S. DOE Office of Science (SC)

    Office of Science (SC)

    Hampshire Emory University External link , Atlanta, Georgia Florida A&M University External link , Tallahassee, Florida Florida State University External link , Tallahassee, ...

  10. NNSA Awards HBCU Grants | National Nuclear Security Administration

    National Nuclear Security Administration (NNSA)

    Clark Atlanta University (Georgia) (400,000) Research and Training in Radiochemistry, EM, Defense Nuclear Non Proliferation and Advanced Simulation and Computing Fisk University ...

  11. GE Hybrid Power Generation Systems | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    Name: GE Hybrid Power Generation Systems Place: Georgia Zip: Atlanta Product: Focused on fuel cell stack and system development. References: GE Hybrid Power Generation Systems1...

  12. Navajo Wind Energy | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    Navajo Wind Energy Jump to: navigation, search Name: Navajo Wind Energy Place: Atlanta, Georgia Zip: 30318 Sector: Wind energy Product: Atalanta-based but China-focused wind...

  13. Plum Combustion | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    Plum Combustion Place: Atlanta, Georgia Product: Combustion technology, which reduces NOx-emissions. Coordinates: 33.748315, -84.391109 Show Map Loading map......

  14. NREL: Technology Transfer - NREL Awarded $4.9 Million for Small...

    U.S. Department of Energy (DOE) - all webpages (Extended Search)

    Awarded 4.9 Million for Small Business Voucher Pilot July 9, 2015 During the July 8 Clean Energy Manufacturing Initiative's Southeast Regional Summit in Atlanta, Georgia, the...

  15. Servidyne | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    Georgia Zip: 30339 Sector: Efficiency Product: Atlanta-based energy efficiency and demand response company. Coordinates: 33.748315, -84.391109 Show Map Loading map......

  16. SilvaGas Corporation FERCO Enterprises Inc | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    SilvaGas Corporation FERCO Enterprises Inc Jump to: navigation, search Name: SilvaGas Corporation (FERCO Enterprises, Inc.) Place: Atlanta, Georgia Zip: 30339 Sector: Renewable...

  17. American Process Inc | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    Process Inc Jump to: navigation, search Name: American Process Inc Place: Atlanta, Georgia Zip: 30309 Product: Consulting engineering specialist firm dedicated to energy cost...

  18. Notices

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    ... President) 1000 Peachtree Street NE., Atlanta, Georgia 30309: 1. Anthony T. Moore, Allison T. Moore, both of Burns, Tennessee, and Southeastern Bancorp, Inc., Dickson, Tennessee, ...

  19. Summary of Needs and Opportunities from the 2011 Residential...

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    Needs and Opportunities from the 2011 Residential Energy Efficiency Stakeholders Meeting: Atlanta, Georgia -- March 16-18, 2011 Summary of Needs and Opportunities from the 2011 ...

  20. Geoplasma LLC | Open Energy Information

    OpenEI (Open Energy Information) [EERE & EIA]

    LLC Place: Atlanta, Georgia Zip: 30363 Product: Geoplasma is developing plasma gasification technology. Coordinates: 33.748315, -84.391109 Show Map Loading map......

  1. SOUTHEASTERN FEDERAL POWER ALLIANCE- November 6, 2014

    Office of Energy Efficiency and Renewable Energy (EERE)

    Southeastern Federal Power Alliance meeting was held on November 6,2014 in the Martin Luther King, Jr. Federal Building in Atlanta, Georgia.

  2. EA-1865: Department of Energy Loan Guarantee to Kior, Inc., for Biorefinery Facilities in Georgia, Mississippi, and Texas

    Energy.gov [DOE]

    This EA will evaluate the environmental impacts of a proposal to issue a Federal loan guarantee to Kior, Inc., for biorefinery facilities in Georgia, Mississippi, and Texas. This EA is on hold.

  3. InGaAsN/GaAs heterojunction for multi-junction solar cells

    DOEpatents

    Kurtz, Steven R.; Allerman, Andrew A.; Klem, John F.; Jones, Eric D.

    2001-01-01

    An InGaAsN/GaAs semiconductor p-n heterojunction is disclosed for use in forming a 0.95-1.2 eV bandgap photodetector with application for use in high-efficiency multi-junction solar cells. The InGaAsN/GaAs p-n heterojunction is formed by epitaxially growing on a gallium arsenide (GaAs) or germanium (Ge) substrate an n-type indium gallium arsenide nitride (InGaAsN) layer having a semiconductor alloy composition In.sub.x Ga.sub.1-x As.sub.1-y N.sub.y with 0GaAs layer, with the InGaAsN and GaAs layers being lattice-matched to the substrate. The InGaAsN/GaAs p-n heterojunction can be epitaxially grown by either molecular beam epitaxy (MBE) or metalorganic chemical vapor deposition (MOCVD). The InGaAsN/GaAs p-n heterojunction provides a high open-circuit voltage of up to 0.62 volts and an internal quantum efficiency of >70%.

  4. Magnetism and transport properties of epitaxial Fe-Ga thin films on GaAs(001)

    SciTech Connect

    Duong Anh Tuan; Shin, Yooleemi; Cho, Sunglae; Dang Duc Dung; Vo Thanh Son

    2012-04-01

    Epitaxial Fe-Ga thin films in disordered bcc {alpha}-Fe crystal structure (A2) have been grown on GaAs(001) by molecular beam epitaxy. The saturated magnetization (M{sub S}) decreased from 1371 to 1105 kA/m with increasing Ga concentration from 10.5 to 24.3 % at room temperature. The lattice parameter increased with the increase in Ga content because of the larger atomic radius of Ga atom than that of Fe. The increase in carrier density with Ga content caused in lower resistivity.

  5. Graphene induced remote surface scattering in graphene/AlGaN/GaN heterostructures

    SciTech Connect

    Liu, Xiwen; Li, Dan; Wang, Bobo; Liu, Bin; Chen, Famin; Jin, Guangri; Lu, Yanwu

    2014-10-20

    The mobilities of single-layer graphene combined with AlGaN/GaN heterostructures on two-dimensional electron gases in graphene/AlGaN/GaN double heterojunction are calculated. The impact of electron density in single-layer graphene is also studied. Remote surface roughness (RSR) and remote interfacial charge (RIC) scatterings are introduced into this heterostructure. The mobilities limited by RSR and RIC are an order of magnitude higher than that of interface roughness and misfit dislocation. This study contributes to designing structures for generation of higher electron mobility in graphene/AlGaN/GaN double heterojunction.

  6. Airports & Lodging | Savannah River Ecology Laboratory

    U.S. Department of Energy (DOE) - all webpages (Extended Search)

    Columbia, SC Columbia Metropolitan Airport - all major carriers; 1.5-2h drive to SREL. Atlanta, GA Hartsfield Airport - all major carriers; 2.5-3 hour drive from Atlanta, GA, to ...

  7. DOE's Manufacturing Demonstration Facility Helps Set Guinness...

    Energy Saver

    ... RSVP for the Michigan boot camp on September 14th at NextEnergy in Detroit. RSVP for the Georgia boot camp on October 4th at Georgia Tech in Atlanta. RSVP for the Virginia boot ...

  8. Secretary Moniz to Speak at AMO Co-Sponsored World Energy Engineering...

    Energy.gov [DOE] (indexed site)

    ... RSVP for the Michigan boot camp on September 14th at NextEnergy in Detroit. RSVP for the Georgia boot camp on October 4th at Georgia Tech in Atlanta. RSVP for the Virginia boot ...

  9. 6,"Edwin I Hatch","Nuclear","Georgia Power Co",1759 7,"Thomas A Smith Energy Facility","Natural gas","Oglethorpe Power Corporation",1290

    Energy Information Administration (EIA) (indexed site)

    Georgia" ,"Plant","Primary energy source","Operating company","Net summer capacity (MW)" 1,"Scherer","Coal","Georgia Power Co",3389 2,"Bowen","Coal","Georgia Power Co",3202 3,"Jack McDonough","Natural gas","Georgia Power Co",2578 4,"Vogtle","Nuclear","Georgia Power Co",2302 5,"Wansley","Coal","Georgia Power

  10. Band Structure of Strain-Balanced GaAsBi/GaAsN Super-lattices on GaAs

    SciTech Connect

    Hwang, J.; Phillips, J. D.

    2011-05-31

    GaAs alloys with dilute content of Bi and N provide a large reduction in band-gap energy with increasing alloy composition. GaAsBi/GaAsN heterojunctions have a type-II band alignment, where superlattices based on these materials offer a wide range for designing effective band-gap energy by varying superlattice period and alloy composition. The miniband structure and effective band gap for strain-balanced GaAsBi/GaAsN superlattices with effective lattice match to GaAs are calculated for alloy compositions up to 5% Bi and N using the kp method. The effective band gap for these superlattices is found to vary between 0.89 and 1.32 eV for period thickness ranging from 10 to 100 . The joint density of states and optical absorption of a 40/40 GaAs0.96Bi0.04/GaAs0.98N0.02 superlattice are reported demonstrating a ground-state transition at 1.005 eV and first excited transition at 1.074 eV. The joint density of states is similar in magnitude to GaAs, while the optical absorption is approximately one order of magnitude lower due to the spatially indirect optical transition in the type-II structure. The GaAsBi/GaAsN system may provide a new material system with lattice match to GaAs in a spectral range of high importance for optoelectronic devices including solar cells, photodetectors, and light emitters.

  11. Optical and magnetotransport properties of InGaAs/GaAsSb/GaAs structures doped with a magnetic impurity

    SciTech Connect

    Kalentyeva, I. L. Zvonkov, B. N.; Vikhrova, O. V.; Danilov, Yu. A.; Demina, P. B.; Dorokhin, M. V.; Zdoroveyshchev, A. V.

    2015-11-15

    InGaAs/GaAsSb/GaAs bilayer quantum-well structures containing a magnetic-impurity δ-layer (Mn) at the GaAs/InGaAs interface are experimentally studied for the first time. The structures are fabricated by metal organic chemical-vapor deposition (MOCVD) and laser deposition on substrates of conducting (n{sup +}) and semi-insulating GaAs in a single growth cycle. The InGaAs-layer thickness is varied from 1.5 to 5 nm. The significant effect of a decrease in the InGaAs quantum-well thickness on the optical and magnetotransport properties of the structures under study is detected. Nonlinear magnetic-field dependence of the Hall resistance and negative magnetoresistance at temperatures of ≤30–40 K, circular polarization of the electroluminescence in a magnetic field, opposite behaviors of the photoluminescence and electroluminescence emission intensities in the structures, and an increase in the contribution of indirect transitions with decreasing InGaAs thickness are observed. Simulation shows that these effects can be caused by the influence of the δ-layer of acceptor impurity (Mn) on the band structure and the hole concentration distribution in the bilayer quantum well.

  12. AlGaAsSb/GaSb Distributed Bragg Reflectors Grown by Organometallic Vapor Phase Epitaxy

    SciTech Connect

    C.A. Wang; C.J. Vineis; D.R. Calawa

    2002-02-13

    The first AlGaAsSb/GaSb quarter-wave distributed Bragg reflectors grown by metallic vapor phase epitaxy are reported. The peak reflectance is 96% for a 10-period structure.

  13. Degradation mechanisms of 2 MeV proton irradiated AlGaN/GaN HEMTs...

    Office of Scientific and Technical Information (OSTI)

    irradiated AlGaNGaN HEMTs This content will become publicly available on August 26, 2016 Title: Degradation mechanisms of 2 MeV proton irradiated AlGaNGaN HEMTs Authors: ...

  14. (In,Ga)As/GaP electrical injection quantum dot laser

    SciTech Connect

    Heidemann, M. Höfling, S.; Kamp, M.

    2014-01-06

    The paper reports on the realization of multilayer (In,Ga)As/GaP quantum dot (QD) lasers grown by gas source molecular beam epitaxy. The QDs have been embedded in (Al,Ga)P/GaP waveguide structures. Laser operation at 710 nm is obtained for broad area laser devices with a threshold current density of 4.4 kA/cm{sup 2} at a heat-sink temperature of 80 K.

  15. GaInP/GaAs/GaInAs Monolithic Tandem Cells for High-Performance Solar Concentrators

    SciTech Connect

    Wanlass, M. W.; Ahrenkiel, S. P.; Albin, D. S.; Carapella, J. J.; Duda, A.; Emery, K.; Geisz, J. F.; Jones, K.; Kurtz, S.; Moriarty, T.; Romero, M. J.

    2005-08-01

    We present a new approach for ultra-high-performance tandem solar cells that involves inverted epitaxial growth and ultra-thin device processing. The additional degree of freedom afforded by the inverted design allows the monolithic integration of high-, and medium-bandgap, lattice-matched (LM) subcell materials with lower-bandgap, lattice-mismatched (LMM) materials in a tandem structure through the use of transparent compositionally graded layers. The current work concerns an inverted, series-connected, triple-bandgap, GaInP (LM, 1.87 eV)/GaAs (LM, 1.42 eV)/GaInAs (LMM, {approx}1 eV) device structure grown on a GaAs substrate. Ultra-thin tandem devices are fabricated by mounting the epiwafers to pre-metallized Si wafer handles and selectively removing the parent GaAs substrate. The resulting handle-mounted, ultra-thin tandem cells have a number of important advantages, including improved performance and potential reclamation/reuse of the parent substrate for epitaxial growth. Additionally, realistic performance modeling calculations suggest that terrestrial concentrator efficiencies in the range of 40-45% are possible with this new tandem cell approach. A laboratory-scale (0.24 cm2), prototype GaInP/GaAs/GaInAs tandem cell with a terrestrial concentrator efficiency of 37.9% at a low concentration ratio (10.1 suns) is described, which surpasses the previous world efficiency record of 37.3%.

  16. EIS-0476: Vogtle Electric Generating Plant in Burke County, GA...

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    6: Vogtle Electric Generating Plant in Burke County, GA EIS-0476: Vogtle Electric Generating Plant in Burke County, GA EIS-0476: Final Environmental Impact Statement EIS-0476: ...

  17. A hole modulator for InGaN/GaN light-emitting diodes

    SciTech Connect

    Zhang, Zi-Hui; Kyaw, Zabu; Liu, Wei; Ji, Yun; Wang, Liancheng; Tan, Swee Tiam; Sun, Xiao Wei E-mail: VOLKAN@stanfordalumni.org; Demir, Hilmi Volkan E-mail: VOLKAN@stanfordalumni.org

    2015-02-09

    The low p-type doping efficiency of the p-GaN layer has severely limited the performance of InGaN/GaN light-emitting diodes (LEDs) due to the ineffective hole injection into the InGaN/GaN multiple quantum well (MQW) active region. The essence of improving the hole injection efficiency is to increase the hole concentration in the p-GaN layer. Therefore, in this work, we have proposed a hole modulator and studied it both theoretically and experimentally. In the hole modulator, the holes in a remote p-type doped layer are depleted by the built-in electric field and stored in the p-GaN layer. By this means, the overall hole concentration in the p-GaN layer can be enhanced. Furthermore, the hole modulator is adopted in the InGaN/GaN LEDs, which reduces the effective valance band barrier height for the p-type electron blocking layer from ?332?meV to ?294?meV at 80?A/cm{sup 2} and demonstrates an improved optical performance, thanks to the increased hole concentration in the p-GaN layer and thus the improved hole injection into the MQWs.

  18. AlGaN/GaN heterostructure prepared on a Si (110) substrate via pulsed sputtering

    SciTech Connect

    Watanabe, T.; Ohta, J.; Kondo, T.; Ohashi, M.; Ueno, K.; Kobayashi, A.; Fujioka, H.

    2014-05-05

    GaN films were grown on Si (110) substrates using a low-temperature growth technique based on pulsed sputtering. Reduction of the growth temperature suppressed the strain in the GaN films, leading to an increase in the critical thickness for crack formation. In addition, an AlGaN/GaN heterostructure with a flat heterointerface was prepared using this technique. Furthermore, the existence of a two dimensional electron gas at the heterointerface with a mobility of 1360 cm{sup 2}/Vs and a sheet carrier density of 1.3??10{sup 13}?cm{sup ?2} was confirmed. Finally, the use of the AlGaN/GaN heterostructure in a high electron mobility transistor was demonstrated. These results indicate that low-temperature growth via pulsed sputtering is quite promising for the fabrication of GaN-based electronic devices.

  19. Metal-interconnection-free integration of InGaN/GaN light emitting diodes with AlGaN/GaN high electron mobility transistors

    SciTech Connect

    Liu, Chao; Cai, Yuefei; Liu, Zhaojun; Ma, Jun; Lau, Kei May

    2015-05-04

    We report a metal-interconnection-free integration scheme for InGaN/GaN light emitting diodes (LEDs) and AlGaN/GaN high electron mobility transistors (HEMTs) by combining selective epi removal (SER) and selective epitaxial growth (SEG) techniques. SER of HEMT epi was carried out first to expose the bottom unintentionally doped GaN buffer and the sidewall GaN channel. A LED structure was regrown in the SER region with the bottom n-type GaN layer (n-electrode of the LED) connected to the HEMTs laterally, enabling monolithic integration of the HEMTs and LEDs (HEMT-LED) without metal-interconnection. In addition to saving substrate real estate, minimal interface resistance between the regrown n-type GaN and the HEMT channel is a significant improvement over metal-interconnection. Furthermore, excellent off-state leakage characteristics of the driving transistor can also be guaranteed in such an integration scheme.

  20. Georgia Hosts Multi-Agency Waste Isolation Pilot Plant Transportation Exercise

    Energy.gov [DOE]

    COVINGTON, Ga. – Emergency personnel throughout the U.S. who respond in the event of a potential accident involving radioactive waste shipments take part in mock training scenarios to help them prepare for an actual incident.

  1. CX-001791: Categorical Exclusion Determination

    Energy.gov [DOE]

    Dekalb County/Metropolitan Atlanta Alternative Fuel and Advanced Technology Vehicle Project (Atlanta)CX(s) Applied: A1, A7Date: 04/21/2010Location(s): Atlanta, GeorgiaOffice(s): Energy Efficiency and Renewable Energy, National Energy Technology Laboratory

  2. Revised Manuscript

    U.S. Department of Energy (DOE) - all webpages (Extended Search)

    09 November, 2016 Energy Levels of Light Nuclei A = 11 J.H. Kelley a,b , E. Kwan a,c , J.E. Purcell a,d , C.G. Sheu a,c , and H.R. Weller a,c a Triangle Universities Nuclear Laboratory, Durham, NC 27708-0308 b Department of Physics, North Carolina State University, Raleigh, NC 27695-8202 c Department of Physics, Duke University, Durham, NC 27708-0305 d Department of Physics and Astronomy, Georgia State University, Atlanta, GA 30303 Abstract: An evaluation of A = 11 was published in Nuclear

  3. Revised Manuscript May

    U.S. Department of Energy (DOE) - all webpages (Extended Search)

    Revised Manuscript May 20, 2014 Energy Levels of Light Nuclei A = 3 J.E. Purcell a,b , J.H. Kelley a,c , E. Kwan a,d , C.G. Sheu a,d and H.R. Weller a,d a Triangle Universities Nuclear Laboratory, Durham, NC 27708-0308 b Department of Physics and Astronomy, Georgia State University, Atlanta, GA 30303 c Department of Physics, North Carolina State University, Raleigh, NC 27695-8202 d Department of Physics, Duke University, Durham, NC 27708-0305 Abstract: A compilation of experimental and

  4. DOE Kicks Off National "Change a Light, Change the World" Campaign |

    Office of Energy Efficiency and Renewable Energy (EERE) (indexed site)

    Department of Energy Kicks Off National "Change a Light, Change the World" Campaign DOE Kicks Off National "Change a Light, Change the World" Campaign October 3, 2006 - 9:08am Addthis ATLANTA, GA - U.S. Department of Energy (DOE) Assistant Secretary for Policy and International Affairs Karen A. Harbert today joined Georgia Power President and CEO Mike Garrett to kick off the seventh annual ENERGY STAR ® National "Change a Light, Change the World" campaign at

  5. NETL F 451.1/1-1, Categorical Exclusion Designation Form

    U.S. Department of Energy (DOE) - all webpages (Extended Search)

    4041 Southwest Research Ins San Antonio, TX Thar Energy, LLC: Pittsburgh, PA; GE Global Research: Niskayuna, NY; Georgia Tech: Atlanta, GA; University of Central Florida: Orlando, FL FE/TDIC/Coal/AEST Mark Freeman High Inlet Temp. Combustor for Direct Fired Supercritical Oxy-Combustion - P II Put a Phase II Cooperative Agreement in Place for a project selected under the FY2016 FOA (DE-FOA-0001107) where SwRI is teamed with Thar Energy and three small $50K sub-awards. Phase II MARK FREEMAN

  6. Date Event Sponsor Event Name Location Jan.6 NUPOCC The Power Conference Hawaii

    U.S. Department of Energy (DOE) - all webpages (Extended Search)

    Jan.6 NUPOCC The Power Conference Hawaii Honolulu, HI Jan. 12-14 Cyber corps SFS Annual National Science Foundation scholarship for Service Job Fair Washington, DC Jan. 16 Old Dominion Univ. CUWiP Career Norfolk, CA Jan.20 Georgia Tech 2016 ECE Spring Career Fair Atlanta, GA Jan. 26-27 Texas A&M Engineering Career Fair College Station, TX Feb.2 NM Tech Spring 2016 Career & Graduate School Fair Socorro, NM Feb.2-3 NMSU 11th Annual Career Connections Las Cruses, NM Feb. 4 UC Boulder

  7. Superfund at work: Hazardous waste cleanup efforts nationwide, Spring 1993 (Powersville site profile, Peach County, Georgia)

    SciTech Connect

    Not Available

    1993-01-01

    The US Environmental Protection Agency (EPA) encountered much more than a municipal landfill at the Powersville site in Peach County, Georgia. Contamination from improperly dumped hazardous wastes and pesticides tainted an old quarry used for household garbage. Chemicals migrating into area ground water threatened local drinking water supplies. To address these issues, EPA's Superfund program designed a cleanup strategy that included: negotiating with the county and chemical companies to contain the hazardous wastes on site underneath a protective cover; investigating reports of drinking water contamination and extending municipal water lines to affected residents; and conducting a tailored community relations program to inform and educate residents about the site.

  8. ,"Georgia Natural Gas Imports Price All Countries (Dollars per Thousand Cubic Feet)"

    Energy Information Administration (EIA) (indexed site)

    Price All Countries (Dollars per Thousand Cubic Feet)" ,"Click worksheet name or tab at bottom for data" ,"Worksheet Name","Description","# Of Series","Frequency","Latest Data for" ,"Data 1","Georgia Natural Gas Imports Price All Countries (Dollars per Thousand Cubic Feet)",1,"Annual",2015 ,"Release Date:","10/31/2016" ,"Next Release Date:","11/30/2016"

  9. ,"Georgia Natural Gas Imports from All Countries (Million Cubic Feet)"

    Energy Information Administration (EIA) (indexed site)

    from All Countries (Million Cubic Feet)" ,"Click worksheet name or tab at bottom for data" ,"Worksheet Name","Description","# Of Series","Frequency","Latest Data for" ,"Data 1","Georgia Natural Gas Imports from All Countries (Million Cubic Feet)",1,"Annual",2015 ,"Release Date:","10/31/2016" ,"Next Release Date:","11/30/2016" ,"Excel File

  10. ,"Georgia Natural Gas Input Supplemental Fuels (MMcf)"

    Energy Information Administration (EIA) (indexed site)

    Input Supplemental Fuels (MMcf)" ,"Click worksheet name or tab at bottom for data" ,"Worksheet Name","Description","# Of Series","Frequency","Latest Data for" ,"Data 1","Georgia Natural Gas Input Supplemental Fuels (MMcf)",1,"Annual",2015 ,"Release Date:","10/31/2016" ,"Next Release Date:","11/30/2016" ,"Excel File Name:","na1400_sga_2a.xls"

  11. ,"Georgia Natural Gas LNG Storage Net Withdrawals (MMcf)"

    Energy Information Administration (EIA) (indexed site)

    Net Withdrawals (MMcf)" ,"Click worksheet name or tab at bottom for data" ,"Worksheet Name","Description","# Of Series","Frequency","Latest Data for" ,"Data 1","Georgia Natural Gas LNG Storage Net Withdrawals (MMcf)",1,"Annual",2015 ,"Release Date:","10/31/2016" ,"Next Release Date:","11/30/2016" ,"Excel File Name:","na1350_sga_2a.xls"

  12. ,"Georgia Natural Gas Underground Storage Injections All Operators (MMcf)"

    Energy Information Administration (EIA) (indexed site)

    Injections All Operators (MMcf)" ,"Click worksheet name or tab at bottom for data" ,"Worksheet Name","Description","# Of Series","Frequency","Latest Data for" ,"Data 1","Georgia Natural Gas Underground Storage Injections All Operators (MMcf)",1,"Annual",1975 ,"Release Date:","10/31/2016" ,"Next Release Date:","11/30/2016" ,"Excel File

  13. ,"Georgia Natural Gas Underground Storage Net Withdrawals All Operators (MMcf)"

    Energy Information Administration (EIA) (indexed site)

    Net Withdrawals All Operators (MMcf)" ,"Click worksheet name or tab at bottom for data" ,"Worksheet Name","Description","# Of Series","Frequency","Latest Data for" ,"Data 1","Georgia Natural Gas Underground Storage Net Withdrawals All Operators (MMcf)",1,"Annual",1975 ,"Release Date:","10/31/2016" ,"Next Release Date:","11/30/2016" ,"Excel File

  14. ,"Georgia Natural Gas Vehicle Fuel Price (Dollars per Thousand Cubic Feet)"

    Energy Information Administration (EIA) (indexed site)

    Price (Dollars per Thousand Cubic Feet)" ,"Click worksheet name or tab at bottom for data" ,"Worksheet Name","Description","# Of Series","Frequency","Latest Data for" ,"Data 1","Georgia Natural Gas Vehicle Fuel Price (Dollars per Thousand Cubic Feet)",1,"Annual",2012 ,"Release Date:","10/31/2016" ,"Next Release Date:","11/30/2016" ,"Excel File

  15. Appearance Results from MiniBooNE Georgia Karagiorgi Columbia University

    U.S. Department of Energy (DOE) - all webpages (Extended Search)

    Appearance Results from MiniBooNE Georgia Karagiorgi Columbia University WIN'11 - Cape Town, South Africa 2 Outline of this talk: -- The LSND excess signal: Evidence for high-Δm 2 oscillations -- The MiniBooNE experiment -- MiniBooNE neutrino mode oscillation results: LSND signature refuted -- MiniBooNE antineutrino mode oscillation results: LSND signature confrmed ? -- Light sterile neutrino oscillations: Where we stand today -- Future searches: MiniBooNE, MicroBooNE 1993 -1998 1998 2001

  16. Beyond Beginning Balances Presentation

    National Nuclear Security Administration (NNSA)

    Beyond Beginning Balances Peter Dessaules DOE/SO-62 Obligations Accounting Implementation Workshop Obligations Accounting Implementation Workshop January 13, 2004 January 13, 2004 Crowne Crowne Plaza Plaza Ravinia Ravinia Atlanta, Georgia Atlanta, Georgia Beginning Foreign Obligation Beginning Foreign Obligation Balances Balances * Why are they important? - United States Agreements for Cooperation hold Treaty status. - These Agreements require periodic reporting to the foreign countries. -

  17. Carrier quenching in InGaP/GaAs double heterostructures

    SciTech Connect

    Wells, Nathan P. Driskell, Travis U.; Hudson, Andrew I.; LaLumondiere, Stephen D.; Lotshaw, William T.; Forbes, David V.; Hubbard, Seth M.

    2015-08-14

    Photoluminescence measurements on a series of GaAs double heterostructures demonstrate a rapid quenching of carriers in the GaAs layer at irradiance levels below 0.1 W/cm{sup 2} in samples with a GaAs-on-InGaP interface. These results indicate the existence of non-radiative defect centers at or near the GaAs-on-InGaP interface, consistent with previous reports showing the intermixing of In and P when free As impinges on the InGaP surface during growth. At low irradiance, these defect centers can lead to sub-ns carrier lifetimes. The defect centers involved in the rapid carrier quenching can be saturated at higher irradiance levels and allow carrier lifetimes to reach hundreds of nanoseconds. To our knowledge, this is the first report of a nearly three orders of magnitude decrease in carrier lifetime at low irradiance in a simple double heterostructure. Carrier quenching occurs at irradiance levels near the integrated Air Mass Zero (AM0) and Air Mass 1.5 (AM1.5) solar irradiance. Additionally, a lower energy photoluminescence band is observed both at room and cryogenic temperatures. The temperature and time dependence of the lower energy luminescence is consistent with the presence of an unintentional InGaAs or InGaAsP quantum well that forms due to compositional mixing at the GaAs-on-InGaP interface. Our results are of general interest to the photovoltaic community as InGaP is commonly used as a window layer in GaAs based solar cells.

  18. Accelerated aging of GaAs concentrator solar cells

    SciTech Connect

    Gregory, P.E.

    1982-04-01

    An accelerated aging study of AlGaAs/GaAs solar cells has been completed. The purpose of the study was to identify the possible degradation mechanisms of AlGaAs/GaAs solar cells in terrestrial applications. Thermal storage tests and accelerated AlGaAs corrosion studies were performed to provide an experimental basis for a statistical analysis of the estimated lifetime. Results of this study suggest that a properly designed and fabricated AlGaAs/GaAs solar cell can be mechanically rugged and environmentally stable with projected lifetimes exceeding 100 years.

  19. Synthesis, morphology and optical properties of GaN and AlGaN semiconductor nanostructures

    SciTech Connect

    Kuppulingam, B. Singh, Shubra Baskar, K.

    2014-04-24

    Hexagonal Gallium Nitride (GaN) and Aluminum Gallium Nitride (AlGaN) nanoparticles were synthesized by sol-gel method using Ethylene Diamine Tetra Acetic acid (EDTA) complex route. Powder X-ray diffraction (PXRD) analysis confirms the hexagonal wurtzite structure of GaN and Al{sub 0.25}Ga{sub 0.75}N nanoparticles. Surface morphology and elemental analysis were carried out by Scanning Electron Microscope (SEM) and Energy Dispersive X-ray spectroscopy (EDX). The room temperature Photoluminescence (PL) study shows the near band edge emission for GaN at 3.35 eV and at 3.59 eV for AlGaN nanoparticles. The Aluminum (Al) composition of 20% has been obtained from PL emission around 345 nm.

  20. Zinc blende GaAs films grown on wurtzite GaN/sapphire templates

    SciTech Connect

    Chaldyshev, V.V.; Nielsen, B.; Mendez, E.E.; Musikhin, Yu.G.; Bert, N.A.; Ma, Zh.; Holden, Todd

    2005-03-28

    1-{mu}m-thick zinc-blende GaAs (111) films were grown by molecular-beam epitaxy on wurtzite GaN/sapphire (0001) templates. In spite of a {approx}20% lattice mismatch, epitaxial growth was realized, so that the GaAs films showed good adhesion and their surface had a larger mirror-like area with an average surface roughness of 10 nm. Transmission electron microscopy revealed a flat and abrupt epitaxial GaAs/GaN interface with some nanocavities and a large number of dislocations. Reasonably good crystalline quality of the GaAs films was confirmed by Raman characterization. Spectroscopic ellipsometry showed sharp interference fringes and characteristic parameters in the range of 0.75-5.3 eV. Photoluminescence study revealed extended band tails and dominance of non-radiative carrier recombination.

  1. High-performance InGaP/GaAs pnp {delta}-doped heterojunction bipolar transistor

    SciTech Connect

    Tsai, J.-H. Chiu, S.-Y.; Lour, W.-S.; Guo, D.-F.

    2009-07-15

    In this article, a novel InGaP/GaAs pnp {delta}-doped heterojunction bipolar transistor is first demonstrated. Though the valence band discontinuity at InGaP/GaAs heterojunction is relatively large, the addition of a {delta}-doped sheet between two spacer layers at the emitter-base (E-B) junction effectively eliminates the potential spike and increases the confined barrier for electrons, simultaneously. Experimentally, a high current gain of 25 and a relatively low E-B offset voltage of 60 mV are achieved. The offset voltage is much smaller than the conventional InGaP/GaAs pnp HBT. The proposed device could be used for linear amplifiers and low-power complementary integrated circuit applications.

  2. Oxidation of ultrathin GaSe

    SciTech Connect

    Thomas Edwin Beechem; McDonald, Anthony E.; Ohta, Taisuke; Howell, Stephen W.; Kalugin, Nikolai G.; Kowalski, Brian M.; Brumbach, Michael T.; Spataru, Catalin D.; Pask, Jesse A.

    2015-10-26

    Oxidation of exfoliated gallium selenide (GaSe) is investigated through Raman, photoluminescence, Auger, and X-ray photoelectron spectroscopies. Photoluminescence and Raman intensity reductions associated with spectral features of GaSe are shown to coincide with the emergence of signatures emanating from the by-products of the oxidation reaction, namely, Ga2Se3 and amorphous Se. Furthermore, photoinduced oxidation is initiated over a portion of a flake highlighting the potential for laser based patterning of two-dimensional heterostructures via selective oxidation.

  3. Oxidation of ultrathin GaSe

    DOE PAGES [OSTI]

    Thomas Edwin Beechem; McDonald, Anthony E.; Ohta, Taisuke; Howell, Stephen W.; Kalugin, Nikolai G.; Kowalski, Brian M.; Brumbach, Michael T.; Spataru, Catalin D.; Pask, Jesse A.

    2015-10-26

    Oxidation of exfoliated gallium selenide (GaSe) is investigated through Raman, photoluminescence, Auger, and X-ray photoelectron spectroscopies. Photoluminescence and Raman intensity reductions associated with spectral features of GaSe are shown to coincide with the emergence of signatures emanating from the by-products of the oxidation reaction, namely, Ga2Se3 and amorphous Se. Furthermore, photoinduced oxidation is initiated over a portion of a flake highlighting the potential for laser based patterning of two-dimensional heterostructures via selective oxidation.

  4. Highly uniform, multi-stacked InGaAs/GaAs quantum dots embedded in a GaAs nanowire

    SciTech Connect

    Tatebayashi, J. Ota, Y.; Ishida, S.; Nishioka, M.; Iwamoto, S.; Arakawa, Y.

    2014-09-08

    We demonstrate a highly uniform, dense stack of In{sub 0.22}Ga{sub 0.78}As/GaAs quantum dot (QD) structures in a single GaAs nanowire (NW). The size (and hence emission energy) of individual QD is tuned by careful control of the growth conditions based on a diffusion model of morphological evolution of NWs and optical characterization. By carefully tailoring the emission energies of individual QD, dot-to-dot inhomogeneous broadening of QD stacks in a single NW can be as narrow as 9.3?meV. This method provides huge advantages over traditional QD stack using a strain-induced Stranski-Krastanow growth scheme. We show that it is possible to fabricate up to 200 uniform QDs in single GaAs NWs using this growth technique without degradation of the photoluminescence intensity.

  5. Simplified 2DEG carrier concentration model for composite barrier AlGaN/GaN HEMT

    SciTech Connect

    Das, Palash Biswas, Dhrubes

    2014-04-24

    The self consistent solution of Schrodinger and Poisson equations is used along with the total charge depletion model and applied with a novel approach of composite AlGaN barrier based HEMT heterostructure. The solution leaded to a completely new analytical model for Fermi energy level vs. 2DEG carrier concentration. This was eventually used to demonstrate a new analytical model for the temperature dependent 2DEG carrier concentration in AlGaN/GaN HEMT.

  6. Ultra-high frequency photoconductivity decay in GaAs/Ge/GaAs double heterostructure grown by molecular beam epitaxy

    SciTech Connect

    Hudait, M. K.; Zhu, Y.; Johnston, S. W.; Maurya, D.; Priya, S.; Umbel, R.

    2013-03-04

    GaAs/Ge/GaAs double heterostructures (DHs) were grown in-situ using two separate molecular beam epitaxy chambers. High-resolution x-ray rocking curve demonstrates a high-quality GaAs/Ge/GaAs heterostructure by observing Pendelloesung oscillations. The kinetics of the carrier recombination in Ge/GaAs DHs were investigated using photoconductivity decay measurements by the incidence excitation from the front and back side of 15 nm GaAs/100 nm Ge/0.5 {mu}m GaAs/(100)GaAs substrate structure. High-minority carrier lifetimes of 1.06-1.17 {mu}s were measured when excited from the front or from the back of the Ge epitaxial layer, suggests equivalent interface quality of GaAs/Ge and Ge/GaAs. Wavelength-dependent minority carrier recombination properties are explained by the wavelength-dependent absorption coefficient of Ge.

  7. Magnetic coupling in ferromagnetic semiconductor (Ga,Mn)As/(Al,Ga,Mn)As bilayers

    SciTech Connect

    Wang, M.; Wadley, P.; Campion, R. P.; Rushforth, A. W.; Edmonds, K. W.; Gallagher, B. L.; Charlton, T. R.; Kinane, C. J.; Langridge, S.

    2015-08-07

    We report on a study of ferromagnetic semiconductor (Ga,Mn)As/(Al,Ga,Mn)As bilayers using magnetometry and polarized neutron reflectivity (PNR). From depth-resolved characterization of the magnetic structure obtained by PNR, we concluded that the (Ga,Mn)As and (Al,Ga,Mn)As layers have in-plane and perpendicular-to-plane magnetic easy axes, respectively, with weak interlayer coupling. Therefore, the layer magnetizations align perpendicular to each other under low magnetic fields and parallel at high fields.

  8. EA-1963: Elba Liquefaction Project; Chatham, Hart, Jefferson, and Effingham Counties, Georgia, and Jasper County, South Carolina

    Energy.gov [DOE]

    Federal Energy Regulatory Commission (FERC) prepared an EA that assesses the potential environmental impacts of a proposal to add natural gas liquefaction and export capabilities at the existing Elba Liquefied Natural Gas Terminal near Savannah, Georgia. Information about this project is available on the FERC website (www.ferc.gov).

  9. US SoAtl GA Site Consumption

    Annual Energy Outlook

    ... Yes Yes No No 0% 20% 40% 60% 80% 100% US GA No Car CAR IS PARKED WITHIN 20 FT OF ELECTRICAL OUTLET More highlights from RECS on housing characteristics and energy-related ...

  10. Princeton Plasma Physics Lab - General Atomics (GA)

    U.S. Department of Energy (DOE) - all webpages (Extended Search)

    general-atomics-ga General Atomics en The Scorpion's Strategy: "Catch and Subdue" http:www.pppl.govnode1132

  11. GaTe semiconductor for radiation detection

    DOEpatents

    Payne, Stephen A.; Burger, Arnold; Mandal, Krishna C.

    2009-06-23

    GaTe semiconductor is used as a room-temperature radiation detector. GaTe has useful properties for radiation detectors: ideal bandgap, favorable mobilities, low melting point (no evaporation), non-hygroscopic nature, and availability of high-purity starting materials. The detector can be used, e.g., for detection of illicit nuclear weapons and radiological dispersed devices at ports of entry, in cities, and off shore and for determination of medical isotopes present in a patient.

  12. GaP ring-like nanostructures on GaAs (100) with In{sub 0.15}Ga{sub 0.85}As compensation layers

    SciTech Connect

    Prongjit, Patchareewan Pankaow, Naraporn Boonpeng, Poonyasiri Thainoi, Supachok Panyakeow, Somsak Ratanathammaphan, Somchai

    2013-12-04

    We present the fabrication of GaP ring-like nanostructures on GaAs (100) substrates with inserted In{sub 0.15}Ga{sub 0.85}As compensation layers. The samples are grown by droplet epitaxy using solid-source molecular beam epitaxy. The dependency of nanostructural and optical properties of GaP nanostructures on In{sub 0.15}Ga{sub 0.85}As layer thickness is investigated by ex-situ atomic force microscope (AFM) and photoluminescence (PL). It is found that the characteristics of GaP ring-like structures on GaAs strongly depend on the In{sub 0.15}Ga{sub 0.85}As layer thickness.

  13. Georgia Natural Gas Vehicle Fuel Price (Dollars per Thousand Cubic Feet)

    Energy Information Administration (EIA) (indexed site)

    Vehicle Fuel Price (Dollars per Thousand Cubic Feet) Georgia Natural Gas Vehicle Fuel Price (Dollars per Thousand Cubic Feet) Decade Year-0 Year-1 Year-2 Year-3 Year-4 Year-5 Year-6 Year-7 Year-8 Year-9 1990's 3.54 4.07 3.86 3.86 4.14 4.10 2000's -- -- 13.05 12.93 12.91 12.11 2010's 5.17 5.57 14.51 - = No Data Reported; -- = Not Applicable; NA = Not Available; W = Withheld to avoid disclosure of individual company data. Release Date: 10/31/2016 Next Release Date: 11/30/2016 Referring Pages:

  14. Georgia Natural Gas Delivered to Commercial Consumers for the Account of

    Energy Information Administration (EIA) (indexed site)

    Others (Million Cubic Feet) Delivered to Commercial Consumers for the Account of Others (Million Cubic Feet) Georgia Natural Gas Delivered to Commercial Consumers for the Account of Others (Million Cubic Feet) Decade Year-0 Year-1 Year-2 Year-3 Year-4 Year-5 Year-6 Year-7 Year-8 Year-9 1980's 1,067 3,418 5,176 1990's 5,721 6,395 6,389 5,487 4,304 3,663 3,646 6,211 9,078 16,996 2000's 48,726 40,531 38,395 39,611 44,025 42,112 38,204 38,967 41,555 43,845 2010's 49,157 46,512 42,971 46,494

  15. Lattice-matched epitaxial GaInAsSb/GaSb thermophotovoltaic devices

    SciTech Connect

    Wang, C.A.; Choi, H.K.; Turner, G.W.; Spears, D.L.; Manfra, M.J.; Charache, G.W.

    1997-05-01

    The materials development of Ga{sub 1{minus}x}In{sub x}As{sub y}Sb{sub 1{minus}y} alloys for lattice-matched thermophotovoltaic (TPV) devices is reported. Epilayers with cutoff wavelength 2--2.4 {micro}m at room temperature and lattice-matched to GaSb substrates were grown by both low-pressure organometallic vapor phase epitaxy and molecular beam epitaxy. These layers exhibit high optical and structural quality. For demonstrating lattice-matched thermophotovoltaic devices, p- and n-type doping studies were performed. Several TPV device structures were investigated, with variations in the base/emitter thicknesses and the incorporation of a high bandgap GaSb or AlGaAsSb window layer. Significant improvement in the external quantum efficiency is observed for devices with an AlGaAsSb window layer compared to those without one.

  16. Green cubic GaInN/GaN light-emitting diode on microstructured silicon (100)

    SciTech Connect

    Stark, Christoph J. M.; Detchprohm, Theeradetch; Wetzel, Christian, E-mail: wetzel@ieee.org [Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States) [Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States); Future Chips Constellation, Rensselaer Polytechnic Institute, 110 8th Street, Troy, New York 12180 (United States); Lee, S. C.; Brueck, S. R. J. [Department of Electrical and Computer Engineering and Center for High Technology Materials, University of New Mexico, 1313 Goddard SE, Albuquerque, New Mexico 87106 (United States)] [Department of Electrical and Computer Engineering and Center for High Technology Materials, University of New Mexico, 1313 Goddard SE, Albuquerque, New Mexico 87106 (United States); Jiang, Y.-B. [Department of Earth and Planetary Science, University of New Mexico, Albuquerque, New Mexico 87131 (United States)] [Department of Earth and Planetary Science, University of New Mexico, Albuquerque, New Mexico 87131 (United States)

    2013-12-02

    GaInN/GaN light-emitting diodes free of piezoelectric polarization were prepared on standard electronic-grade Si(100) substrates. Micro-stripes of GaN and GaInN/GaN quantum wells in the cubic crystal structure were grown on intersecting (111) planes of microscale V-grooved Si in metal-organic vapor phase epitaxy, covering over 50% of the wafer surface area. Crystal phases were identified in electron back-scattering diffraction. A cross-sectional analysis reveals a cubic structure virtually free of line defects. Electroluminescence over 20 to 100??A is found fixed at 487?nm (peak), 516?nm (dominant). Such structures therefore should allow higher efficiency, wavelength-stable light emitters throughout the visible spectrum.

  17. Enhanced thermoelectric transport in modulation-doped GaN/AlGaN core/shell nanowires

    DOE PAGES [OSTI]

    Song, Erdong; Li, Qiming; Swartzentruber, Brian; Pan, Wei; Wang, George T.; Martinez, Julio A.

    2015-11-25

    The thermoelectric properties of unintentionally n-doped core GaN/AlGaN core/shell N-face nanowires are reported. We found that the temperature dependence of the electrical conductivity is consistent with thermally activated carriers with two distinctive donor energies. The Seebeck coefficient of GaN/AlGaN nanowires is more than twice as large as that for the GaN nanowires alone. However, an outer layer of GaN deposited onto the GaN/AlGaN core/shell nanowires decreases the Seebeck coefficient at room temperature, while the temperature dependence of the electrical conductivity remains the same. We attribute these observations to the formation of an electron gas channel within the heavily-doped GaN coremore » of the GaN/AlGaN nanowires. The room-temperature thermoelectric power factor for the GaN/AlGaN nanowires can be four times higher than the GaN nanowires. As a result, selective doping in bandgap engineered core/shell nanowires is proposed for enhancing the thermoelectric power.« less

  18. Enhanced thermoelectric transport in modulation-doped GaN/AlGaN core/shell nanowires

    SciTech Connect

    Song, Erdong; Li, Qiming; Swartzentruber, Brian; Pan, Wei; Wang, George T.; Martinez, Julio A.

    2015-11-25

    The thermoelectric properties of unintentionally n-doped core GaN/AlGaN core/shell N-face nanowires are reported. We found that the temperature dependence of the electrical conductivity is consistent with thermally activated carriers with two distinctive donor energies. The Seebeck coefficient of GaN/AlGaN nanowires is more than twice as large as that for the GaN nanowires alone. However, an outer layer of GaN deposited onto the GaN/AlGaN core/shell nanowires decreases the Seebeck coefficient at room temperature, while the temperature dependence of the electrical conductivity remains the same. We attribute these observations to the formation of an electron gas channel within the heavily-doped GaN core of the GaN/AlGaN nanowires. The room-temperature thermoelectric power factor for the GaN/AlGaN nanowires can be four times higher than the GaN nanowires. As a result, selective doping in bandgap engineered core/shell nanowires is proposed for enhancing the thermoelectric power.

  19. InGaN/GaN tunnel junctions for hole injection in GaN light emitting diodes

    SciTech Connect

    Krishnamoorthy, Sriram E-mail: rajan@ece.osu.edu; Akyol, Fatih; Rajan, Siddharth E-mail: rajan@ece.osu.edu

    2014-10-06

    InGaN/GaN tunnel junction contacts were grown using plasma assisted molecular beam epitaxy (MBE) on top of a metal-organic chemical vapor deposition (MOCVD)-grown InGaN/GaN blue (450 nm) light emitting diode. A voltage drop of 5.3 V at 100 mA, forward resistance of 2 × 10{sup −2} Ω cm{sup 2}, and a higher light output power compared to the reference light emitting diodes (LED) with semi-transparent p-contacts were measured in the tunnel junction LED (TJLED). A forward resistance of 5 × 10{sup −4} Ω cm{sup 2} was measured in a GaN PN junction with the identical tunnel junction contact as the TJLED, grown completely by MBE. The depletion region due to the impurities at the regrowth interface between the MBE tunnel junction and the MOCVD-grown LED was hence found to limit the forward resistance measured in the TJLED.

  20. Structural and optical properties of InGaN--GaN nanowire heterostructures grown by molecular beam epitaxy

    SciTech Connect

    Limbach, F.; Gotschke, T.; Stoica, T.; Calarco, R.; Sutter, E.; Ciston, J.; Cusco, R.; Artus, L.; Kremling, S.; Hofling, S.; Worschech, L.; Grutzmacher, D.

    2011-01-01

    InGaN/GaN nanowire (NW) heterostructures grown by plasma assisted molecular beam epitaxy were studied in comparison to their GaN and InGaN counterparts. The InGaN/GaN heterostructure NWs are composed of a GaN NW, a thin InGaN shell, and a multifaceted InGaN cap wrapping the top part of the GaN NW. High-resolution transmission electron microscopy (HRTEM) images taken from different parts of a InGaN/GaN NW show a wurtzite structure of the GaN core and the epitaxial InGaN shell around it, while additional crystallographic domains are observed whithin the InGaN cap region. Large changes in the lattice parameter along the wire, from pure GaN to higher In concentration demonstrate the successful growth of a complex InGaN/GaN NW heterostructure. Photoluminescence (PL) spectra of these heterostructure NW ensembles show rather broad and intense emission peak at 2.1 eV. However, μ-PL spectra measured on single NWs reveal a reduced broadening of the visible luminescence. The analysis of the longitudinal optical phonon Raman peak position and its shape reveal a variation in the In content between 20% and 30%, in agreement with the values estimated by PL and HRTEM investigations. The reported studies are important for understanding of the growth and properties of NW heterostructures suitable for applications in optoelectronics and photovoltaics.

  1. Structural and optical properties of InGaN--GaN nanowire heterostructures grown by molecular beam epitaxy

    DOE PAGES [OSTI]

    Limbach, F.; Gotschke, T.; Stoica, T.; Calarco, R.; Sutter, E.; Ciston, J.; Cusco, R.; Artus, L.; Kremling, S.; Hofling, S.; et al

    2011-01-01

    InGaN/GaN nanowire (NW) heterostructures grown by plasma assisted molecular beam epitaxy were studied in comparison to their GaN and InGaN counterparts. The InGaN/GaN heterostructure NWs are composed of a GaN NW, a thin InGaN shell, and a multifaceted InGaN cap wrapping the top part of the GaN NW. High-resolution transmission electron microscopy (HRTEM) images taken from different parts of a InGaN/GaN NW show a wurtzite structure of the GaN core and the epitaxial InGaN shell around it, while additional crystallographic domains are observed whithin the InGaN cap region. Large changes in the lattice parameter along the wire, from pure GaNmore » to higher In concentration demonstrate the successful growth of a complex InGaN/GaN NW heterostructure. Photoluminescence (PL) spectra of these heterostructure NW ensembles show rather broad and intense emission peak at 2.1 eV. However, μ-PL spectra measured on single NWs reveal a reduced broadening of the visible luminescence. The analysis of the longitudinal optical phonon Raman peak position and its shape reveal a variation in the In content between 20% and 30%, in agreement with the values estimated by PL and HRTEM investigations. The reported studies are important for understanding of the growth and properties of NW heterostructures suitable for applications in optoelectronics and photovoltaics.« less

  2. Structural and optical properties of InGaNGaN nanowire heterostructures grown by molecular beam epitaxy

    DOE PAGES [OSTI]

    Limbach, F.; Gotschke, T.; Stoica, T.; Calarco, R.; Sutter, E.; Ciston, J.; Cusco, R.; Artus, L.; Kremling, S.; Ho?fling, S.; et al

    2011-01-01

    InGaN/GaN nanowire (NW) heterostructures grown by plasma assisted molecular beam epitaxy were studied in comparison to their GaN and InGaN counterparts. The InGaN/GaN heterostructure NWs are composed of a GaN NW, a thin InGaN shell, and a multifaceted InGaN cap wrapping the top part of the GaN NW. High-resolution transmission electron microscopy (HRTEM) images taken from different parts of a InGaN/GaN NW show a wurtzite structure of the GaN core and the epitaxial InGaN shell around it, while additional crystallographic domains are observed whithin the InGaN cap region. Large changes in the lattice parameter along the wire, from pure GaNmoreto higher In concentration demonstrate the successful growth of a complex InGaN/GaN NW heterostructure. Photoluminescence (PL) spectra of these heterostructure NW ensembles show rather broad and intense emission peak at 2.1 eV. However, ?-PL spectra measured on single NWs reveal a reduced broadening of the visible luminescence. The analysis of the longitudinal optical phonon Raman peak position and its shape reveal a variation in the In content between 20% and 30%, in agreement with the values estimated by PL and HRTEM investigations. The reported studies are important for understanding of the growth and properties of NW heterostructures suitable for applications in optoelectronics and photovoltaics.less

  3. Investigation of surface-plasmon coupled red light emitting InGaN/GaN multi-quantum well with Ag nanostructures coated on GaN surface

    SciTech Connect

    Li, Yi; Liu, Bin E-mail: rzhang@nju.edu.cn; Zhang, Rong E-mail: rzhang@nju.edu.cn; Xie, Zili; Zhuang, Zhe; Dai, JiangPing; Tao, Tao; Zhi, Ting; Zhang, Guogang; Chen, Peng; Ren, Fangfang; Zhao, Hong; Zheng, Youdou

    2015-04-21

    Surface-plasmon (SP) coupled red light emitting InGaN/GaN multiple quantum well (MQW) structure is fabricated and investigated. The centre wavelength of 5-period InGaN/GaN MQW structure is about 620?nm. The intensity of photoluminescence (PL) for InGaN QW with naked Ag nano-structures (NS) is only slightly increased due to the oxidation of Ag NS as compared to that for the InGaN QW. However, InGaN QW with Ag NS/SiO{sub 2} structure can evidently enhance the emission efficiency due to the elimination of surface oxide layer of Ag NS. With increasing the laser excitation power, the PL intensity is enhanced by 25%53% as compared to that for the SiO{sub 2} coating InGaN QW. The steady-state electric field distribution obtained by the three-dimensional finite-difference time-domain method is different for both structures. The proportion of the field distributed in the Ag NS for the GaN/Ag NS/SiO{sub 2} structure is smaller as compared to that for the GaN/naked Ag NS structure. As a result, the energy loss of localized SP modes for the GaN/naked Ag NS structure will be larger due to the absorption of Ag layer.

  4. Strain-compensated (Ga,In)N/(Al,Ga)N/GaN multiple quantum wells for improved yellow/amber light emission

    SciTech Connect

    Lekhal, K.; Damilano, B. De Mierry, P.; Venngus, P.; Ngo, H. T.; Rosales, D.; Gil, B.; Hussain, S.

    2015-04-06

    Yellow/amber (570600?nm) emitting In{sub x}Ga{sub 1?x}N/Al{sub y}Ga{sub 1?y}N/GaN multiple quantum wells (QWs) have been grown by metal organic chemical vapor deposition on GaN-on- sapphire templates. When the (Al,Ga)N thickness of the barrier increases, the room temperature photoluminescence is red-shifted while its yield increases. This is attributed to an increase of the QW internal electric field and an improvement of the material quality due to the compensation of the compressive strain of the In{sub x}Ga{sub 1?x}N QWs by the Al{sub y}Ga{sub 1?y}N layers, respectively.

  5. On strongly GA-convex functions and stochastic processes

    SciTech Connect

    Bekar, Nurgl Okur; Akdemir, Hande Gnay; ??can, ?mdat

    2014-08-20

    In this study, we introduce strongly GA-convex functions and stochastic processes. We provide related well-known Kuhn type results and Hermite-Hadamard type inequality for strongly GA-convex functions and stochastic processes.

  6. Few-hole double quantum dot in an undoped GaAs/AlGaAs heterostructure

    SciTech Connect

    Tracy, L. A.; Hargett, T. W.; Reno, J. L.

    2014-03-24

    We demonstrate a hole double quantum dot in an undoped GaAs/AlGaAs heterostructure. The interdot coupling can be tuned over a wide range, from formation of a large single dot to two well-isolated quantum dots. Using charge sensing, we show the ability to completely empty the dot of holes and control the charge occupation in the few-hole regime. The device should allow for control of individual hole spins in single and double quantum dots in GaAs.

  7. InGaAs/GaAs quantum dot interdiffiusion induced by cap layer overgrowth

    SciTech Connect

    Jasinski, J.; Babinski, A.; Czeczott, M.; Bozek, R.

    2000-06-28

    The effect of thermal treatment during and after growth of InGaAs/GaAs quantum dot (QD) structures was studied. Transmission electron microscopy and atomic force microscopy confirmed the presence of interacting QDs, as was expected from analysis of temperature dependence of QD photoluminescence (PL) peak. The results indicate that the effect of post-growth annealing can be similar to the effect of elevated temperature of capping layer growth. Both, these thermal treatments can lead to a similar In and Ga interdiffiusion resulting in a similar blue-shift of QD PL peak.

  8. Optical spectroscopy of quantum confined states in GaAs/AlGaAs quantum well tubes

    SciTech Connect

    Shi, Teng; Fickenscher, Melodie; Smith, Leigh; Jackson, Howard; Yarrison-Rice, Jan; Gao, Qiang; Tan, Hoe; Jagadish, Chennupati; Etheridge, Joanne; Wong, Bryan M.

    2013-12-04

    We have investigated the quantum confinement of electronic states in GaAs/Al{sub x}Ga{sub 1?x}As nanowire heterostructures which contain radial GaAs quantum wells of either 4nm or 8nm. Photoluminescence and photoluminescence excitation spectroscopy are performed on single nanowires. We observed emission and excitation of electron and hole confined states. Numerical calculations of the quantum confined states using the detailed structural information on the quantum well tubes show excellent agreement with these optical results.

  9. Three-junction solar cells comprised of a thin-film GaInP/GaAs tandem cell mechanically stacked on a Si cell

    SciTech Connect

    Yazawa, Y.; Tamura, K.; Watahiki, S.; Kitatani, T.; Ohtsuka, H.; Warabisako, T.

    1997-12-31

    Three-junction tandem solar cells were fabricated by mechanical stacking of a thin-film GaInP/GaAs monolithic tandem cell and a Si cell. The epitaxial lift-off (ELO) technique was used for the thinning of GaInP/GaAs tandem cells. Both spectral responses of the GaInP top cell and the GaAs middle cell in the thin-film GaInP/GaAs monolithic tandem cell were conserved. The Si cell performance has been improved by reducing the absorption loss in the GaAs substrate.

  10. Georgia-Pacific Palatka Plant Uses Thermal Pinch Analysis and Evaluates Water Reduction in Plant-Wide Energy Assessment

    SciTech Connect

    2002-12-01

    This OIT BestPractices Case Study describes the methods and results used in a plant-wide assessment at a Georgia-Pacific paper mill in Palatka, FL. Assessment personnel recommended several projects, which, if implemented, have the potential to save the plant more than 729,000 MMBtu per year and $2.9 million per year. In addition, the plant could reduce water use by 2,100 gallons per minute.

  11. GaAs photoconductive semiconductor switch

    DOEpatents

    Loubriel, G.M.; Baca, A.G.; Zutavern, F.J.

    1998-09-08

    A high gain, optically triggered, photoconductive semiconductor switch (PCSS) implemented in GaAs as a reverse-biased pin structure with a passivation layer above the intrinsic GaAs substrate in the gap between the two electrodes of the device is disclosed. The reverse-biased configuration in combination with the addition of the passivation layer greatly reduces surface current leakage that has been a problem for prior PCSS devices and enables employment of the much less expensive and more reliable DC charging systems instead of the pulsed charging systems that needed to be used with prior PCSS devices. 5 figs.

  12. GaAs photoconductive semiconductor switch

    DOEpatents

    Loubriel, Guillermo M.; Baca, Albert G.; Zutavern, Fred J.

    1998-01-01

    A high gain, optically triggered, photoconductive semiconductor switch (PCSS) implemented in GaAs as a reverse-biased pin structure with a passivation layer above the intrinsic GaAs substrate in the gap between the two electrodes of the device. The reverse-biased configuration in combination with the addition of the passivation layer greatly reduces surface current leakage that has been a problem for prior PCSS devices and enables employment of the much less expensive and more reliable DC charging systems instead of the pulsed charging systems that needed to be used with prior PCSS devices.

  13. GaN: Defect and Device Issues

    SciTech Connect

    Pearton, S.J.; Ren, F.; Shul, R.J.; Zolper, J.C.

    1998-11-09

    The role of extended and point defects, and key impurities such as C, O and H, on the electrical and optical properties of GaN is reviewed. Recent progress in the development of high reliability contacts, thermal processing, dry and wet etching techniques, implantation doping and isolation and gate insulator technology is detailed. Finally, the performance of GaN-based electronic and photonic devices such as field effect transistors, UV detectors, laser diodes and light-emitting diodes is covered, along with the influence of process-induced or grown-in defects and impurities on the device physics.

  14. ,"Georgia Natural Gas Industrial Price (Dollars per Thousand Cubic Feet)"

    Energy Information Administration (EIA) (indexed site)

    Annual",2015 ,"Release Date:","10/31/2016" ,"Next Release Date:","11/30/2016" ,"Excel File Name:","n3035ga3a.xls" ,"Available from Web Page:","http://tonto.eia.gov/dnav/ng/hist/n3035ga3a.htm" ,"Source:","Energy Information Administration" ,"For Help, Contact:","infoctr@eia.doe.gov" ,,"(202) 586-8800",,,"10/28/2016 9:35:07 PM" "Back to

  15. ,"Georgia Natural Gas Industrial Price (Dollars per Thousand Cubic Feet)"

    Energy Information Administration (EIA) (indexed site)

    Monthly","8/2016" ,"Release Date:","10/31/2016" ,"Next Release Date:","11/30/2016" ,"Excel File Name:","n3035ga3m.xls" ,"Available from Web Page:","http://tonto.eia.gov/dnav/ng/hist/n3035ga3m.htm" ,"Source:","Energy Information Administration" ,"For Help, Contact:","infoctr@eia.doe.gov" ,,"(202) 586-8800",,,"10/28/2016 9:35:07 PM" "Back

  16. Lattice-Mismatched GaAs/InGaAs Two-Junction Solar Cells by Direct Wafer Bonding

    SciTech Connect

    Tanabe, K.; Aiken, D. J.; Wanlass, M. W.; Morral, A. F.; Atwater, H. A.

    2006-01-01

    Direct bonded interconnect between subcells of a lattice-mismatched III-V compound multijunction cell would enable dislocation-free active regions by confining the defect network needed for lattice mismatch accommodation to tunnel junction interfaces, while metamorphic growth inevitably results in less design flexibility and lower material quality than is desirable. The first direct-bond interconnected multijunction solar cell, a two-terminal monolithic GaAs/InGaAs two-junction solar cell, is reported and demonstrates viability of direct wafer bonding for solar cell applications. The tandem cell open-circuit voltage was approximately the sum of the subcell open-circuit voltages. This achievement shows direct bonding enables us to construct lattice-mismatched III-V multijunction solar cells and is extensible to an ultrahigh efficiency InGaP/GaAs/InGaAsP/InGaAs four-junction cell by bonding a GaAs-based lattice-matched InGaP/GaAs subcell and an InP-based lattice-matched InGaAsP/InGaAs subcell. The interfacial resistance experimentally obtained for bonded GaAs/InP smaller than 0.10 Ohm-cm{sup 2} would result in a negligible decrease in overall cell efficiency of {approx}0.02%, under 1-sun illumination.

  17. Composition profiling of GaAs/AlGaAs quantum dots grown by droplet epitaxy

    SciTech Connect

    Bocquel, J.; Koenraad, P. M.; Giddings, A. D.; Prosa, T. J.; Larson, D. J.; Mano, T.

    2014-10-13

    Droplet epitaxy (DE) is a growth method which can create III-V quantum dots (QDs) whose optoelectronic properties can be accurately controlled through the crystallisation conditions. In this work, GaAs/AlGaAs DE-QDs have been analyzed with the complimentary techniques of cross-sectional scanning tunneling microscopy and atom probe tomography. Structural details and a quantitative chemical analysis of QDs of different sizes are obtained. Most QDs were found to be pure GaAs, while a small proportion exhibited high intermixing caused by a local etching process. Large QDs with a high aspect ratio were observed to have an Al-rich crown above the GaAs QD. This structure is attributed to differences in mobility of the cations during the capping phase of the DE growth.

  18. High-field quasi-ballistic transport in AlGaN/GaN heterostructures

    SciTech Connect

    Danilchenko, B. A.; Tripachko, N. A.; Belyaev, A. E.; Vitusevich, S. A. Hardtdegen, H.; Lth, H.

    2014-02-17

    Mechanisms of electron transport formation in 2D conducting channels of AlGaN/GaN heterostructures in extremely high electric fields at 4.2?K have been studied. Devices with a narrow constriction for the current flow demonstrate high-speed electron transport with an electron velocity of 6.8??10{sup 7}?cm/s. Such a velocity is more than two times higher than values reported for conventional semiconductors and about 15% smaller than the limit value predicted for GaN. Superior velocity is attained in the channel with considerable carrier reduction. The effect is related to a carrier runaway phenomenon. The results are in good agreement with theoretical predictions for GaN-based materials.

  19. InGaAs/GaAs (110) quantum dot formation via step meandering

    SciTech Connect

    Diez-Merino, Laura; Tejedor, Paloma

    2011-07-01

    InGaAs (110) semiconductor quantum dots (QDs) offer very promising prospects as a material base for a new generation of high-speed spintronic devices, such as single electron transistors for quantum computing. However, the spontaneous formation of InGaAs QDs is prevented by two-dimensional (2D) layer-by-layer growth on singular GaAs (110) substrates. In this work we have studied, by using atomic force microscopy and photoluminescence spectroscopy (PL), the growth of InGaAs/GaAs QDs on GaAs (110) stepped substrates by molecular beam epitaxy (MBE), and the modification of the adatom incorporation kinetics to surface steps in the presence of chemisorbed atomic hydrogen. The as-grown QDs exhibit lateral dimensions below 100 nm and emission peaks in the 1.35-1.37 eV range. It has been found that a step meandering instability derived from the preferential attachment of In adatoms to [110]-step edges relative to [11n]-type steps plays a key role in the destabilization of 2D growth that leads to 3D mound formation on both conventional and H-terminated vicinal substrates. In the latter case, the driving force for 3D growth via step meandering is enhanced by H-induced upward mass transport in addition to the lower energy cost associated with island formation on H-terminated substrates, which results in a high density array of InGaAs/GaAs dots selectively nucleated on the terrace apices with reduced lateral dimensions and improved PL efficiency relative to those of conventional MBE-grown samples.

  20. AlGaAs/GaAs photovoltaic converters for high power narrowband radiation

    SciTech Connect

    Khvostikov, Vladimir; Kalyuzhnyy, Nikolay; Mintairov, Sergey; Potapovich, Nataliia; Shvarts, Maxim; Sorokina, Svetlana; Andreev, Viacheslav; Luque, Antonio

    2014-09-26

    AlGaAs/GaAs-based laser power PV converters intended for operation with high-power (up to 100 W/cm{sup 2}) radiation were fabricated by LPE and MOCVD techniques. Monochromatic (? = 809 nm) conversion efficiency up to 60% was measured at cells with back surface field and low (x = 0.2) Al concentration 'window'. Modules with a voltage of 4 V and the efficiency of 56% were designed and fabricated.

  1. Sheet resistance under Ohmic contacts to AlGaN/GaN heterostructures

    SciTech Connect

    Hajłasz, M.; Donkers, J. J. T. M.; Sque, S. J.; Heil, S. B. S.; Gravesteijn, D. J.; Rietveld, F. J. R.; Schmitz, J.

    2014-06-16

    For the determination of specific contact resistance in semiconductor devices, it is usually assumed that the sheet resistance under the contact is identical to that between the contacts. This generally does not hold for contacts to AlGaN/GaN structures, where an effective doping under the contact is thought to come from reactions between the contact metals and the AlGaN/GaN. As a consequence, conventional extraction of the specific contact resistance and transfer length leads to erroneous results. In this Letter, the sheet resistance under gold-free Ti/Al-based Ohmic contacts to AlGaN/GaN heterostructures on Si substrates has been investigated by means of electrical measurements, transmission electron microscopy, and technology computer-aided design simulations. It was found to be significantly lower than that outside of the contact area; temperature-dependent electrical characterization showed that it exhibits semiconductor-like behavior. The increase in conduction is attributed to n-type activity of nitrogen vacancies in the AlGaN. They are thought to form during rapid thermal annealing of the metal stack when Ti extracts nitrogen from the underlying semiconductor. The high n-type doping in the region between the metal and the 2-dimensional electron gas pulls the conduction band towards the Fermi level and enhances horizontal electron transport in the AlGaN. Using this improved understanding of the properties of the material underneath the contact, accurate values of transfer length and specific contact resistance have been extracted.

  2. On-sun concentrator performance of GaInP/GaAs tandem cells

    SciTech Connect

    Friedman, D.J.; Kurtz, S.R.; Sinha, K.; McMahon, W.E.; Olson, J.M.

    1996-05-01

    The GaInP/GaAs concentrator device has been adapted for and tested in a prototype {open_quotes}real-world{close_quotes} concentrator power system. The device achieved an on-sun efficiency of 28% {+-} 1% in the range of approximately 200-260 suns with device operating temperatures of 38{degrees}C to 42{degrees}C. The authors discuss ways of further improving this performance for future devices.

  3. Properties of (Ga,Mn)As codoped with Li

    SciTech Connect

    Miyakozawa, Shohei; Chen, Lin; Matsukura, Fumihiro; Ohno, Hideo

    2014-06-02

    We grow Li codoped (Ga,Mn)As layers with nominal Mn composition up to 0.15 by molecular beam epitaxy. The layers before and after annealing are characterized by x-ray diffraction, transport, magnetization, and ferromagnetic resonance measurements. The codoping with Li reduces the lattice constant and electrical resistivity of (Ga,Mn)As after annealing. We find that (Ga,Mn)As:Li takes similar Curie temperature to that of (Ga,Mn)As, but with pronounced magnetic moments and in-plane magnetic anisotropy, indicating that the Li codoping has nontrivial effects on the magnetic properties of (Ga,Mn)As.

  4. Lateral and Vertical Transistors Using the AlGaN/GaN Heterostructure

    SciTech Connect

    Chowdhury, S; Mishra, UK

    2013-10-01

    Power conversion losses are endemic in all areas of electricity consumption, including motion control, lighting, air conditioning, and information technology. Si, the workhorse of the industry, has reached its material limits. Increasingly, the lateral AlGaN/GaN HEMT based on gallium nitride (GaN-on-Si) is becoming the device of choice for medium power electronics as it enables high-power conversion efficiency and reduced form factor at attractive pricing for wide market penetration. The reduced form factor enabled by high-efficiency operation at high frequency further enables significant system price reduction because of savings in bulky extensive passive elements and heat sink costs. The high-power market, however, still remains unaddressed by lateral GaN devices. The current and voltage demand for high power conversion application makes the chip area in a lateral topology so large that it becomes more difficult to manufacture. Vertical GaN devices would play a big role alongside of silicon carbide (SiC) to address the high power conversion needs. In this paper, the development, performance, and status of lateral and vertical GaN devices are discussed.

  5. GaNPAs Solar Cells Lattice-Matched To GaP: Preprint

    SciTech Connect

    Geisz, J. F.; Friedman, D. J.; Kurtz, S.

    2002-05-01

    This conference paper describes the III-V semiconductors grown on silicon substrates are very attractive for lower-cost, high-efficiency multijunction solar cells, but lattice-mismatched alloys that result in high dislocation densities have been unable to achieve satisfactory performance. GaNxP1-x-yAsy is a direct-gap III-V alloy that can be grown lattice-matched to Si when y= 4.7x - 0.1. We propose the use of lattice-matched GaNPAs on silicon for high-efficiency multijunction solar cells. We have grown GaNxP1-x-yAsy on GaP (with a similar lattice constant to silicon) by metal-organic chemical vapor phase epitaxy with direct band-gaps in the range of 1.5 to 2.0 eV. We demonstrate the performance of single-junction GaNxP1-x-yAsy solar cells grown on GaP substrates and discuss the prospects for the development of monolithic high-efficiency multijunction solar cells based on silicon substrates.

  6. Hybrid type-I InAs/GaAs and type-II GaSb/GaAs quantum dot structure with enhanced photoluminescence

    SciTech Connect

    Ji, Hai-Ming; Liang, Baolai Simmonds, Paul J.; Juang, Bor-Chau; Yang, Tao; Young, Robert J.; Huffaker, Diana L.

    2015-03-09

    We investigate the photoluminescence (PL) properties of a hybrid type-I InAs/GaAs and type-II GaSb/GaAs quantum dot (QD) structure grown in a GaAs matrix by molecular beam epitaxy. This hybrid QD structure exhibits more intense PL with a broader spectral range, compared with control samples that contain only InAs or GaSb QDs. This enhanced PL performance is attributed to additional electron and hole injection from the type-I InAs QDs into the adjacent type-II GaSb QDs. We confirm this mechanism using time-resolved and power-dependent PL. These hybrid QD structures show potential for high efficiency QD solar cell applications.

  7. Reactive codoping of GaAlInP compound semiconductors

    DOEpatents

    Hanna, Mark Cooper; Reedy, Robert

    2008-02-12

    A GaAlInP compound semiconductor and a method of producing a GaAlInP compound semiconductor are provided. The apparatus and method comprises a GaAs crystal substrate in a metal organic vapor deposition reactor. Al, Ga, In vapors are prepared by thermally decomposing organometallic compounds. P vapors are prepared by thermally decomposing phospine gas, group II vapors are prepared by thermally decomposing an organometallic group IIA or IIB compound. Group VIB vapors are prepared by thermally decomposing a gaseous compound of group VIB. The Al, Ga, In, P, group II, and group VIB vapors grow a GaAlInP crystal doped with group IIA or IIB and group VIB elements on the substrate wherein the group IIA or IIB and a group VIB vapors produced a codoped GaAlInP compound semiconductor with a group IIA or IIB element serving as a p-type dopant having low group II atomic diffusion.

  8. Health-hazard evaluation report HETA 86-469-2189, James River Corporation, Newnan, Georgia

    SciTech Connect

    Sinks, T.

    1992-03-01

    In response to a request from OSHA, a possible cancer cluster was investigated at the James River Corporation (SIC-2657), Newnan, Georgia. The paperboard packaging facility had been in operation for over 30 years. A retrospective cohort mortality study of 2050 workers employed at the facility between 1957 and 1988 was conducted. As of the study date, 141 workers were deceased, 1705 were alive, and 204 had been lost to follow-up. Overall mortality was similar to that expected as was mortality from diseases of the heart, accidents, and violence. The Standardized Mortality Ratios for all cancers was less than expected. Three workers with bladder cancer and six with kidney cancer were identified. No increased risk of bladder cancer was determined. The risk of kidney cancer was increased. The excess risk was associated with overall duration of employment but was not limited to any single department or work process. The author concludes that workers at the facility had an increased rate of kidney cancer. The author recommends measures to reduce exposures to inks containing pigments made from aromatic amines. Personal protective equipment should not be considered a substitute for adequate engineering controls. Follow-up on the cohort should continue.

  9. Chiyoda Thoroughbred CT-121 clean coal project at Georgia Power`s Plant Yates

    SciTech Connect

    Burford, D.P.

    1997-12-31

    The Chiyoda Thoroughbred CT-121 flue gas desulfurization (FGD) process at Georgia Power`s Plant Yates completed a two year demonstration of its capabilities in late 1994 under both high- and low-particulate loading conditions. This $43 million demonstration was co-funded by Southern Company, the Electric Power Research Institute and the DOE under the auspices of the US Department of Energy`s Round II Innovative Clean Coal Technology (ICCT) program. The focus of the Yates Project was to demonstrate several cost-saving modifications to Chiyoda`s already efficient CT-121 process. These modifications included: the extensive use of fiberglass reinforced plastics (FRP) in the construction of the scrubber vessel and other associated vessels, the elimination of flue gas reheat through the use of an FRP wet chimney, and reliable operation without a spare absorber module. This paper focuses on the testing results from the last trimester of the second phase of testing (high-ash loading). Specifically, operation under elevated ash loading conditions, the effects of low- and high-sulfur coal, air toxics verification testing results and unexpected improvements in byproduct gypsum quality are discussed.

  10. Pyrococcus Furiosus Genome Supplementary Data from the Adams Laboratory at the University of Georgia

    DOE Data Explorer

    Adams, Michael W.W.; Weinberg, Michael V.; Schut, Gerrit J.; Brehm, Scott; Datta, Susmitta; Zhou, J.

    The research in the Adams Laboratory focuses on the physiology of hyperthermophilic organisms with an emphasis on metal-containing enzymes in the hyperthermophilic marine archaeon Pyrococcus furiosus. Three of the many articles from this University of Georgia lab have supplementary materials that are available on the Adams Lab website. All three sets of data are Open Reading Frames (ORFs) used for DNA microarray experiments and the changes in signal intensities. The full citations for the three articles are: 1) Weinberg, M. V., Schut, G. J., Brehm, S., Datta, S. and Adams, M. W. W. (2005) Cold shock of a hyperthermophilic archaeon: Pyrococcus furiosus exhibits multiple responses to a suboptimal growth temperature with a key role for membrane-bound glycoproteins. J Bacteriol. 187, 336-348; 2) Schut, G. J., Brehm, S. D., Datta, S. and Adams, M. W. W. (2003) "Whole genome DNA microarray analysis of a hyperthermophile and an archaeon: Pyrococcus furiosus grown on carbohydrates or peptides" J. Bacteriol. 185, 3935-3947; Schut, G. J., Zhou, J. and Adams, M. W. W. (2001) "DNA microarray analysis of the hyperthermophilic archaeon Pyrococcus furiosus evidence for a new type of sulfur-reducing enzyme" J. Bacteriol. 183, 7027-7036. Note that these articles are copyrighted by the Journal of Bacteriology.

  11. Chemical beam epitaxy growth of AlGaAs/GaAs tunnel junctions using trimethyl aluminium for multijunction solar cells

    SciTech Connect

    Paquette, B.; DeVita, M.; Turala, A.; Kolhatkar, G.; Boucherif, A.; Jaouad, A.; Aimez, V.; Ars, R.; Wilkins, M.; Wheeldon, J. F.; Walker, A. W.; Hinzer, K.; Fafard, S.

    2013-09-27

    AlGaAs/GaAs tunnel junctions for use in high concentration multijunction solar cells were designed and grown by chemical beam epitaxy (CBE) using trimethyl aluminium (TMA) as the p-dopant source for the AlGaAs active layer. Controlled hole concentration up to 4?10{sup 20} cm{sup ?3} was achieved through variation in growth parameters. Fabricated tunnel junctions have a peak tunneling current up to 6140 A/cm{sup 2}. These are suitable for high concentration use and outperform GaAs/GaAs tunnel junctions.

  12. Study of the effects of GaN buffer layer quality on the dc characteristics of AlGaN/GaN high electron mobility transistors

    DOE PAGES [OSTI]

    Ahn, Shihyun; Zhu, Weidi; Dong, Chen; Le, Lingcong; Hwang, Ya-Hsi; Kim, Byung-Jae; Ren, Fan; Pearton, Stephen J.; Lind, Aaron G.; Jones, Kevin S.; et al

    2015-04-21

    Here we studied the effect of buffer layer quality on dc characteristics of AlGaN/GaN high electron mobility (HEMTs). AlGaN/GaN HEMT structures with 2 and 5 μm GaN buffer layers on sapphire substrates from two different vendors with the same Al concentration of AlGaN were used. The defect densities of HEMT structures with 2 and 5 μm GaN buffer layer were 7 × 109 and 5 × 108 cm₋2, respectively, as measured by transmission electron microscopy. There was little difference in drain saturation current or in transfer characteristics in HEMTs on these two types of buffer. However, there was no dispersionmore » observed on the nonpassivated HEMTs with 5 μm GaN buffer layer for gate-lag pulsed measurement at 100 kHz, which was in sharp contrast to the 71% drain current reduction for the HEMT with 2 μm GaN buffer layer.« less

  13. Study of the effects of GaN buffer layer quality on the dc characteristics of AlGaN/GaN high electron mobility transistors

    SciTech Connect

    Ahn, Shihyun; Zhu, Weidi; Dong, Chen; Le, Lingcong; Hwang, Ya-Hsi; Kim, Byung-Jae; Ren, Fan; Pearton, Stephen J.; Lind, Aaron G.; Jones, Kevin S.; Kravchenko, I. I.; Zhang, Ming-Lan

    2015-04-21

    Here we studied the effect of buffer layer quality on dc characteristics of AlGaN/GaN high electron mobility (HEMTs). AlGaN/GaN HEMT structures with 2 and 5 μm GaN buffer layers on sapphire substrates from two different vendors with the same Al concentration of AlGaN were used. The defect densities of HEMT structures with 2 and 5 μm GaN buffer layer were 7 × 109 and 5 × 108 cm₋2, respectively, as measured by transmission electron microscopy. There was little difference in drain saturation current or in transfer characteristics in HEMTs on these two types of buffer. However, there was no dispersion observed on the nonpassivated HEMTs with 5 μm GaN buffer layer for gate-lag pulsed measurement at 100 kHz, which was in sharp contrast to the 71% drain current reduction for the HEMT with 2 μm GaN buffer layer.

  14. Integrating AlGaN/GaN high electron mobility transistor with Si: A comparative study of integration schemes

    SciTech Connect

    Mohan, Nagaboopathy; Raghavan, Srinivasan; Manikant,; Soman, Rohith

    2015-10-07

    AlGaN/GaN high electron mobility transistor stacks deposited on a single growth platform are used to compare the most common transition, AlN to GaN, schemes used for integrating GaN with Si. The efficiency of these transitions based on linearly graded, step graded, interlayer, and superlattice schemes on dislocation density reduction, stress management, surface roughness, and eventually mobility of the 2D-gas are evaluated. In a 500 nm GaN probe layer deposited, all of these transitions result in total transmission electron microscopy measured dislocations densities of 1 to 3 × 10{sup 9}/cm{sup 2} and <1 nm surface roughness. The 2-D electron gas channels formed at an AlGaN-1 nm AlN/GaN interface deposited on this GaN probe layer all have mobilities of 1600–1900 cm{sup 2}/V s at a carrier concentration of 0.7–0.9 × 10{sup 13}/cm{sup 2}. Compressive stress and changes in composition in GaN rich regions of the AlN-GaN transition are the most effective at reducing dislocation density. Amongst all the transitions studied the step graded transition is the one that helps to implement this feature of GaN integration in the simplest and most consistent manner.

  15. Electron tunneling spectroscopy study of electrically active traps in AlGaN/GaN high electron mobility transistors

    SciTech Connect

    Yang, Jie Cui, Sharon; Ma, T. P.; Hung, Ting-Hsiang; Nath, Digbijoy; Krishnamoorthy, Sriram; Rajan, Siddharth

    2013-11-25

    We investigate the energy levels of electron traps in AlGaN/GaN high electron mobility transistors by the use of electron tunneling spectroscopy. Detailed analysis of a typical spectrum, obtained in a wide gate bias range and with both bias polarities, suggests the existence of electron traps both in the bulk of AlGaN and at the AlGaN/GaN interface. The energy levels of the electron traps have been determined to lie within a 0.5?eV band below the conduction band minimum of AlGaN, and there is strong evidence suggesting that these traps contribute to Frenkel-Poole conduction through the AlGaN barrier.

  16. Carbohydrate and lignin are simultaneously solubilized from unpretreat...

    Office of Scientific and Technical Information (OSTI)

    University of Georgia, Athens, GA Georgia Institute of Technology ORNL North Carolina State University National Renewable Energy Laboratory (NREL) National Energy Renewable ...

  17. Analysis of defects in GaAsN grown by chemical beam epitaxy on high index GaAs substrates

    SciTech Connect

    Bouzazi, Boussairi; Kojima, Nobuaki; Ohshita, Yoshio; Yamaguchi, Masafumi

    2013-09-27

    The lattice defects in GaAsN grown by chemical beam epitaxy on GaAs 311B and GaAs 10A toward [110] were characterized and discussed by using deep level transient spectroscopy (DLTS) and on the basis of temperature dependence of the junction capacitances (C{sub J}). In one hand, GaAsN films grown on GaAs 311B and GaAs 10A showed n-type and p-type conductivities, respectively although the similar and simultaneous growth conditions. This result is indeed in contrast to the common known effect of N concentration on the type of conductivity, since the surface 311B showed a significant improvement in the incorporation of N. Furthermore, the temperature dependence of C{sub J} has shown that GaAs 311B limits the formation of N-H defects. In the other hand, the energy states in the forbidden gap of GaAsN were obtained. Six electron traps, E1 to E6, were observed in the DLTS spectrum of GaAsN grown on GaAs 311B, with apparent activation energies of 0.02, 0.14, 0.16, 0.33, 0.48, and 0.74 eV below the bottom edge of the conduction band, respectively. In addition, four hole traps, H1 to H4, were observed in the DLTS spectrum of GaAsN grown on GaAs 10A, with energy depths of 0.13, 0.20, 0.39, and 0.52 eV above the valence band maximum of the alloy, respectively. Hence, the surface morphology of the GaAs substrate was found to play a key factor role in clarifying the electrical properties of GaAsN grown by CBE.

  18. Refractive index of erbium doped GaN thin films

    SciTech Connect

    Alajlouni, S.; Sun, Z. Y.; Li, J.; Lin, J. Y.; Jiang, H. X.; Zavada, J. M.

    2014-08-25

    GaN is an excellent host for erbium (Er) to provide optical emission in the technologically important as well as eye-safe 1540 nm wavelength window. Er doped GaN (GaN:Er) epilayers were synthesized on c-plane sapphire substrates using metal organic chemical vapor deposition. By employing a pulsed growth scheme, the crystalline quality of GaN:Er epilayers was significantly improved over those obtained by conventional growth method of continuous flow of reaction precursors. X-ray diffraction rocking curve linewidths of less than 300 arc sec were achieved for the GaN (0002) diffraction peak, which is comparable to the typical results of undoped high quality GaN epilayers and represents a major improvement over previously reported results for GaN:Er. Spectroscopic ellipsometry was used to determine the refractive index of the GaN:Er epilayers in the 1540 nm wavelength window and a linear dependence on Er concentration was found. The observed refractive index increase with Er incorporation and the improved crystalline quality of the GaN:Er epilayers indicate that low loss GaN:Er optical waveguiding structures are feasible.

  19. 0.7-eV GaInAs Junction for a GaInP/GaAs/GaInAs(1eV)/GaInAs(0.7eV) Four-Junction Solar Cell

    SciTech Connect

    Friedman, D. J.; Geisz, J. F.; Norman, A. G.; Wanlass, M. W.; Kurtz, S. R.

    2006-01-01

    We discuss recent developments in III-V multijunction solar cells, focusing on adding a fourth junction to the Ga{sub 0.5}In{sub 0.5} P/GaAs/Ga{sub 0.75}In{sub 0.25}As inverted three-junction cell. This cell, grown inverted on GaAs so that the lattice-mismatched Ga{sub 0.75}In{sub 0.25}As third junction is the last one grown, has demonstrated 38% efficiency, and 40% is likely in the near future. To achieve still further gains, a lower-bandgap Ga{sub x}In{sub 1-x}As fourth junction could be added to the three-junction structure for a four-junction cell whose efficiency could exceed 45% under concentration. Here, we present the initial development of the Ga{sub x}In{sub 1-x}As fourth junction. Junctions of various bandgaps ranging from 0.88 to 0.73 eV were grown, in order to study the effect of the different amounts of lattice mismatch. At a bandgap of 0.88 eV, junctions were obtained with very encouraging {approx}80% quantum efficiency, 57% fill factor, and 0.36 eV open-circuit voltage. The device performance degrades with decreasing bandgap (i.e., increasing lattice mismatch). We model the four-junction device efficiency vs. fourth junction bandgap to show that an 0.7-eV fourth-junction bandgap, while optimal if it could be achieved in practice, is not necessary; an 0.9-eV bandgap would still permit significant gains in multijunction cell efficiency while being easier to achieve than the lower-bandgap junction.

  20. Structural Model of the Basement in the Central Savannah River Area, South Carolina and Georgia

    SciTech Connect

    Stephenson, D. [Westinghouse Savannah River Company, AIKEN, SC (United States); Stieve, A.

    1992-03-01

    Interpretation of several generations of seismic reflection data and potential field data suggests the presence of several crustal blocks within the basement beneath the Coastal Plain in the Central Savannah River Area (CSRA). The seismic reflection and refraction data include a grid of profiles that capture shallow and deep reflection events and traverse the Savannah River Site and vicinity. Potential field data includes aeromagnetic, ground magnetic surveys, reconnaissance and detailed gravity surveys. Subsurface data from recovered core are used to constrain the model.Interpretation of these data characteristically indicate a southeast dipping basement surface with some minor highs and lows suggesting an erosional pre-Cretaceous unconformity. This surface is interrupted by several basement faults, most of which offset only early Cretaceous sedimentary horizons overlying the erosional surface. The oldest fault is perhaps late Paleozoic because it is truncated at the basement/Coastal Plain interface. This fault is related in timing and mechanism to the underlying Augusta fault. The youngest faults deform Coastal Plain sediments of at least Priabonian age (40-36.6 Ma). One of these young faults is the Pen Branch faults, identified as the southeast dipping master fault for the Triassic Dunbarton basin. All the Cenozoic faults are probably related in time and mechanism to the nearby, well studied Belair fault.The study area thus contains a set of structures evolved from the Alleghanian orogeny through Mesozoic extension to Cenozoic readjustment of the crust. There is a metamorphosed crystalline terrane with several reflector/fault packages, a reactivated Triassic basin, a mafic terrane separating the Dunbarton basin from the large South Georgia basin to the southeast, and an overprint of reverse faults, some reactivated, and some newly formed.

  1. Ab initio study of Ga-GaN system: Transition from adsorbed metal atoms to a metal–semiconductor junction

    SciTech Connect

    Witczak, Przemysław; Kempisty, Pawel; Strak, Pawel

    2015-11-15

    Ab initio studies of a GaN(0001)-Ga system with various thicknesses of a metallic Ga layer were undertaken. The studied systems extend from a GaN(0001) surface with a fractional coverage of gallium atoms to a Ga-GaN metal–semiconductor (m–s) contact. Electronic properties of the system are simulated using density functional theory calculations for different doping of the bulk semiconductor. It is shown that during transition from a bare GaN(0001) surface to a m–s heterostructure, the Fermi level stays pinned at a Ga-broken bond highly dispersive surface state to Ga–Ga states at the m–s interface. Adsorption of gallium leads to an energy gain of about 4 eV for a clean GaN(0001) surface and the energy decreases to 3.2 eV for a thickly Ga-covered surface. The transition to the m–s interface is observed. For a thick Ga overlayer such interface corresponds to a Schottky contact with a barrier equal to 0.9 and 0.6 eV for n- and p-type, respectively. Bond polarization-related dipole layer occurring due to an electron transfer to the metal leads to a potential energy jump of 1.5 eV, independent on the semiconductor doping. Additionally high electron density in the Ga–Ga bond region leads to an energy barrier about 1.2 eV high and 4 Å wide. This feature may adversely affect the conductivity of the n-type m–s system.

  2. Distributed bragg reflector using AIGaN/GaN

    DOEpatents

    Waldrip, Karen E.; Lee, Stephen R.; Han, Jung

    2004-08-10

    A supported distributed Bragg reflector or superlattice structure formed from a substrate, a nucleation layer deposited on the substrate, and an interlayer deposited on the nucleation layer, followed by deposition of (Al,Ga,B)N layers or multiple pairs of (Al,Ga,B)N/(Al,Ga,B)N layers, where the interlayer is a material selected from AlN, Al.sub.x Ga.sub.1-x N, and AlBN with a thickness of approximately 20 to 1000 angstroms. The interlayer functions to reduce or eliminate the initial tensile growth stress, thereby reducing cracking in the structure. Multiple interlayers utilized in an AlGaN/GaN DBR structure can eliminate cracking and produce a structure with a reflectivity value greater than 0.99.

  3. Efficiency enhancement of InGaN/GaN solar cells with nanostructures

    SciTech Connect

    Bai, J.; Yang, C. C.; Athanasiou, M.; Wang, T.

    2014-02-03

    We demonstrate InGaN/GaN multi-quantum-well solar cells with nanostructures operating at a wavelength of 520?nm. Nanostructures with a periodic nanorod or nanohole array are fabricated by means of modified nanosphere lithography. Under 1 sun air-mass 1.5 global spectrum illumination, a fill factor of 50 and an open circuit voltage of 1.9?V are achieved in spite of very high indium content in InGaN alloys usually causing degradation of crystal quality. Both the nanorod array and the nanohole array significantly improve the performance of solar cells, while a larger enhancement is observed for the nanohole array, where the conversion efficiency is enhanced by 51%.

  4. Raman spectroscopy of InGaAs/GaAs nanoheterostructures δ-doped with Mn

    SciTech Connect

    Plankina, S. M.; Vikhrova, O. V.; Danilov, Yu. A.; Zvonkov, B. N.; Kalentyeva, I. L.; Nezhdanov, A. V.; Chunin, I. I.; Yunin, P. A.

    2015-01-15

    The results of complex studies of InGaAs/GaAs nanoheterostructures δ-doped with Mn are reported. The structures are grown by metal-organic vapor-phase epitaxy in combination with laser deposition. By confocal Raman spectroscopy, it is shown that the low-temperature δ-doped GaAs cap layers are of higher crystal quality compared to uniformly doped layers. Scattering of light in the coupled phonon-plasmon mode is observed. The appearance of this mode is conditioned by the diffusion of manganese from the δ-layer. The thickness of the cap layer is found to be d{sub c} ≈ 9–20 nm, optimal for attainment of the highest photoluminescence intensity of the quantum well and the highest layer concentration of holes by doping with manganese.

  5. Electrical compensation by Ga vacancies in Ga{sub 2}O{sub 3} thin films

    SciTech Connect

    Korhonen, E.; Tuomisto, F.; Gogova, D.; Wagner, G.; Baldini, M.; Galazka, Z.; Schewski, R.; Albrecht, M.

    2015-06-15

    The authors have applied positron annihilation spectroscopy to study the vacancy defects in undoped and Si-doped Ga{sub 2}O{sub 3} thin films. The results show that Ga vacancies are formed efficiently during metal-organic vapor phase epitaxy growth of Ga{sub 2}O{sub 3} thin films. Their concentrations are high enough to fully account for the electrical compensation of Si doping. This is in clear contrast to another n-type transparent semiconducting oxide In{sub 2}O{sub 3}, where recent results show that n-type conductivity is not limited by cation vacancies but by other intrinsic defects such as O{sub i}.

  6. Graphene in ohmic contact for both n-GaN and p-GaN

    SciTech Connect

    Zhong, Haijian; Liu, Zhenghui; Shi, Lin; Xu, Gengzhao; Fan, Yingmin; Huang, Zengli; Wang, Jianfeng; Ren, Guoqiang; Xu, Ke

    2014-05-26

    The wrinkles of single layer graphene contacted with either n-GaN or p-GaN were found both forming ohmic contacts investigated by conductive atomic force microscopy. The local IV results show that some of the graphene wrinkles act as high-conductive channels and exhibiting ohmic behaviors compared with the flat regions with Schottky characteristics. We have studied the effects of the graphene wrinkles using density-functional-theory calculations. It is found that the standing and folded wrinkles with zigzag or armchair directions have a tendency to decrease or increase the local work function, respectively, pushing the local Fermi level towards n- or p-type GaN and thus improving the transport properties. These results can benefit recent topical researches and applications for graphene as electrode material integrated in various semiconductor devices.

  7. A InGaN/GaN quantum dot green ({lambda}=524 nm) laser

    SciTech Connect

    Zhang Meng; Banerjee, Animesh; Lee, Chi-Sen; Hinckley, John M.; Bhattacharya, Pallab

    2011-05-30

    The characteristics of self-organized InGaN/GaN quantum dot lasers are reported. The laser heterostructures were grown on c-plane GaN substrates by plasma-assisted molecular beam epitaxy and the laser facets were formed by focused ion beam etching with gallium. Emission above threshold is characterized by a peak at 524 nm (green) and linewidth of 0.7 nm. The lowest measured threshold current density is 1.2 kA/cm{sup 2} at 278 K. The slope and wall plug efficiencies are 0.74 W/A and {approx}1.1%, respectively, at 1.3 kA/cm{sup 2}. The value of T{sub 0}=233 K in the temperature range of 260-300 K.

  8. Photocapacitance study of type-II GaSb/GaAs quantum ring solar cells

    SciTech Connect

    Wagener, M. C.; Botha, J. R.; Carrington, P. J.; Krier, A.

    2014-01-07

    In this study, the density of states associated with the localization of holes in GaSb/GaAs quantum rings are determined by the energy selective charging of the quantum ring distribution. The authors show, using conventional photocapacitance measurements, that the excess charge accumulated within the type-II nanostructures increases with increasing excitation energies for photon energies above 0.9?eV. Optical excitation between the localized hole states and the conduction band is therefore not limited to the ?(k?=?0) point, with pseudo-monochromatic light charging all states lying within the photon energy selected. The energy distribution of the quantum ring states could consequently be accurately related from the excitation dependence of the integrated photocapacitance. The resulting band of localized hole states is shown to be well described by a narrow distribution centered 407?meV above the GaAs valence band maximum.

  9. Economic Benefits, Carbon Dioxide (CO2) Emissions Reduction, and Water Conservation Benefits from 1,000 Megawatts (MW) of New Wind Power in Georgia (Fact Sheet)

    SciTech Connect

    Not Available

    2008-06-01

    The U.S. Department of Energy's Wind Powering America Program is committed to educating state-level policy makers and other stakeholders about the economic, CO2 emissions, and water conservation impacts of wind power. This analysis highlights the expected impacts of 1000 MW of wind power in Georgia. We forecast the cumulative economic benefits from 1000 MW of development in Georgia to be $2.1 billion, annual CO2 reductions are estimated at 3.0 million tons, and annual water savings are 1,628 million gallons.

  10. Temperature dependency of the emission properties from positioned In(Ga)As/GaAs quantum dots

    SciTech Connect

    Braun, T.; Schneider, C.; Maier, S.; Forchel, A.; Höfling, S.; Kamp, M.; Igusa, R.; Iwamoto, S.; Arakawa, Y.

    2014-09-15

    In this letter we study the influence of temperature and excitation power on the emission linewidth from site-controlled InGaAs/GaAs quantum dots grown on nanoholes defined by electron beam lithography and wet chemical etching. We identify thermal electron activation as well as direct exciton loss as the dominant intensity quenching channels. Additionally, we carefully analyze the effects of optical and acoustic phonons as well as close-by defects on the emission linewidth by means of temperature and power dependent micro-photoluminescence on single quantum dots with large pitches.

  11. The disintegration of GaSb/GaAs nanostructures upon capping

    SciTech Connect

    Martin, Andrew J.; Hwang, Jinyoung; Marquis, Emmanuelle A.; Smakman, Erwin; Saucer, Timothy W.; Rodriguez, Garrett V.; Hunter, Allen H.; Sih, Vanessa; Koenraad, Paul M.; Phillips, Jamie D.; Millunchick, Joanna

    2013-01-01

    Atom probe tomography and cross-sectional scanning tunneling microscopy show that GaSb/GaAs quantum dots disintegrate into ring-like clusters of islands upon capping. Band transition energies calculated using an 8-band k.p model of the capped dots with the observed dimensions are consistent with emission energies observed in photoluminescence data. These results emphasize the need for full three-dimensional characterization to develop an accurate understanding of the structure, and thus the optical properties, of buried quantum dots.

  12. Photoluminescence studies of individual and few GaSb/GaAs quantum rings

    SciTech Connect

    Young, M. P.; Woodhead, C. S.; Roberts, J.; Noori, Y. J.; Noble, M. T.; Krier, A.; Hayne, M.; Young, R. J.; Smakman, E. P.; Koenraad, P. M.

    2014-11-15

    We present optical studies of individual and few GaSb quantum rings embedded in a GaAs matrix. Contrary to expectation for type-II confinement, we measure rich spectra containing sharp lines. These lines originate from excitonic recombination and are observed to have resolution-limited full-width at half maximum of 200 ?eV. The detail provided by these measurements allows the characteristic type-II blueshift, observed with increasing excitation power, to be studied at the level of individual nanostructures. These findings are in agreement with hole-charging being the origin of the observed blueshift.

  13. Application of the ASME code in the design of the GA-4 and GA-9 casks

    SciTech Connect

    Mings, W.J. ); Koploy, M.A. )

    1992-01-01

    General Atomics (GA) is developing two spent fuel shipping casks for transport by legal weight truck (LWT). The casks are designed to the loading, environmental conditions and safety requirements defined in Title 10 of the Code of Federal Regulations, Part 71 (10CFR71). To ensure that all components of the cask meet the 10CFR71 rules, GA established structural design criteria for each component based on NRC Regulatory Guides and the American Society of Mechanical Engineers Boiler and Pressure Vessel Code (ASME Code). This paper discusses the criteria used for different cask components, how they were applied and the conservatism and safety margins built into the criteria and assumption.

  14. Application of the ASME code in the design of the GA-4 and GA-9 casks

    SciTech Connect

    Mings, W.J.; Koploy, M.A.

    1992-08-01

    General Atomics (GA) is developing two spent fuel shipping casks for transport by legal weight truck (LWT). The casks are designed to the loading, environmental conditions and safety requirements defined in Title 10 of the Code of Federal Regulations, Part 71 (10CFR71). To ensure that all components of the cask meet the 10CFR71 rules, GA established structural design criteria for each component based on NRC Regulatory Guides and the American Society of Mechanical Engineers Boiler and Pressure Vessel Code (ASME Code). This paper discusses the criteria used for different cask components, how they were applied and the conservatism and safety margins built into the criteria and assumption.

  15. Origins of ion irradiation-induced Ga nanoparticle motion on GaAs surfaces

    SciTech Connect

    Kang, M.; Wu, J. H.; Chen, H. Y.; Thornton, K.; Goldman, R. S. [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States)] [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States); Sofferman, D. L. [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States) [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States); Department of Physics, Adelphi University, Garden City, New York 11530-0701 (United States); Beskin, I. [Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-1040 (United States)] [Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-1040 (United States)

    2013-08-12

    We have examined the origins of ion irradiation-induced nanoparticle (NP) motion. Focused-ion-beam irradiation of GaAs surfaces induces random walks of Ga NPs, which are biased in the direction opposite to that of ion beam scanning. Although the instantaneous NP velocities are constant, the NP drift velocities are dependent on the off-normal irradiation angle, likely due to a difference in surface non-stoichiometry induced by the irradiation angle dependence of the sputtering yield. It is hypothesized that the random walks are initiated by ion irradiation-induced thermal fluctuations, with biasing driven by anisotropic mass transport.

  16. Inverse spin Hall effect in Pt/(Ga,Mn)As

    SciTech Connect

    Nakayama, H.; Chen, L.; Chang, H. W.; Ohno, H.; Matsukura, F.

    2015-06-01

    We investigate dc voltages under ferromagnetic resonance in a Pt/(Ga,Mn)As bilayer structure. A part of the observed dc voltage is shown to originate from the inverse spin Hall effect. The sign of the inverse spin Hall voltage is the same as that in Py/Pt bilayer structure, even though the stacking order of ferromagnetic and nonmagnetic layers is opposite to each other. The spin mixing conductance at the Pt/(Ga,Mn)As interface is determined to be of the order of 10{sup 19 }m{sup −2}, which is about ten times greater than that of (Ga,Mn)As/p-GaAs.

  17. Bismuth alloying properties in GaAs nanowires

    SciTech Connect

    Ding, Lu; Lu, Pengfei; Cao, Huawei; Cai, Ningning; Yu, Zhongyuan; Gao, Tao; Wang, Shumin

    2013-09-15

    First-principles calculations have been performed to investigate the structural, electronic and optical properties of bismuth alloying in GaAs nanowires. A typical model of Ga{sub 31}As{sub 31} nanowires is introduced for its reasonable band gap. The band gap of GaAs{sub 1−x}Bi{sub x} shrinks clearly with the increasing Bi concentration and the band edge shifts when spin–orbit coupling (SOC) is considered. The insertion of Bi atom leads to hybridization of Ga/As/Bi p states which contributes a lot around Fermi level. Scissor effect is involved. The optical properties are presented, including dielectric function, optical absorption spectra and reflectivity, which are also varied with the increasing of Bi concentrations. - Graphical abstract: Top view of Bi-doped GaAs nanowires. Ga, As, and Bi atoms are denoted with grey, purple and red balls, respectively. Display Omitted - Highlights: • A typical model of Ga{sub 31}As{sub 31} nanowires is introduced for its reasonable band gap. • The band gap of GaAs{sub 1−x}Bi{sub x} shrinks clearly with the increasing Bi concentration. • The band edge shifts when spin–orbit coupling (SOC) is considered. • The insertion of Bi atom leads to hybridization of Ga/As/Bi p states.

  18. Photoluminescence from GaAs nanodisks fabricated by using combination...

    Office of Scientific and Technical Information (OSTI)

    GaAs nanodisks fabricated by using combination of neutral beam etching and atomic hydrogen-assisted molecular beam epitaxy regrowth Citation Details In-Document Search Title:...

  19. Au impact on GaAs epitaxial growth on GaAs (111){sub B} substrates in molecular beam epitaxy

    SciTech Connect

    Liao, Zhi-Ming; Chen, Zhi-Gang; Xu, Hong-Yi; Guo, Ya-Nan; Sun, Wen; Zhang, Zhi; Yang, Lei; Lu, Zhen-Yu; Chen, Ping-Ping; Lu, Wei; Zou, Jin; Centre for Microscopy and Microanalysis, The University of Queensland, St. Lucia, Queensland 4072

    2013-02-11

    GaAs growth behaviour under the presence of Au nanoparticles on GaAs {l_brace}111{r_brace}{sub B} substrate is investigated using electron microscopy. It has been found that, during annealing, enhanced Ga surface diffusion towards Au nanoparticles leads to the GaAs epitaxial growth into {l_brace}113{r_brace}{sub B} faceted triangular pyramids under Au nanoparticles, governed by the thermodynamic growth, while during conventional GaAs growth, growth kinetics dominates, resulting in the flatted triangular pyramids at high temperature and the epitaxial nanowires growth at relatively low temperature. This study provides an insight of Au nanoparticle impact on GaAs growth, which is critical for understanding the formation mechanisms of semiconductor nanowires.

  20. Deep level defects in n-type GaAsBi and GaAs grown at low temperatures

    SciTech Connect

    Mooney, P. M.; Watkins, K. P.; Jiang, Zenan; Basile, A. F.; Lewis, R. B.; Bahrami-Yekta, V.; Masnadi-Shirazi, M.; Beaton, D. A.; Tiedje, T.

    2013-04-07

    Deep level defects in n-type GaAs{sub 1-x}Bi{sub x} having 0 < x < 0.012 and GaAs grown by molecular beam epitaxy (MBE) at substrate temperatures between 300 and 400 Degree-Sign C have been investigated by Deep Level Capacitance Spectroscopy. Incorporating Bi suppresses the formation of an electron trap with activation energy 0.40 eV, thus reducing the total trap concentration in dilute GaAsBi layers by more than a factor of 20 compared to GaAs grown under the same conditions. We find that the dominant traps in dilute GaAsBi layers are defect complexes involving As{sub Ga}, as expected for MBE growth at these temperatures.

  1. Deep level centers and their role in photoconductivity transients of InGaAs/GaAs quantum dot chains

    SciTech Connect

    Kondratenko, S. V. Vakulenko, O. V.; Mazur, Yu. I. Dorogan, V. G.; Marega, E.; Benamara, M.; Ware, M. E.; Salamo, G. J.

    2014-11-21

    The in-plane photoconductivity and photoluminescence are investigated in quantum dot-chain InGaAs/GaAs heterostructures. Different photoconductivity transients resulting from spectrally selecting photoexcitation of InGaAs QDs, GaAs spacers, or EL2 centers were observed. Persistent photoconductivity was observed at 80?K after excitation of electron-hole pairs due to interband transitions in both the InGaAs QDs and the GaAs matrix. Giant optically induced quenching of in-plane conductivity driven by recharging of EL2 centers is observed in the spectral range from 0.83?eV to 1.0?eV. Conductivity loss under photoexcitation is discussed in terms of carrier localization by analogy with carrier distribution in disordered media.

  2. Reactive codoping of GaAlInP compound semiconductors (Patent...

    Office of Scientific and Technical Information (OSTI)

    Patent: Reactive codoping of GaAlInP compound semiconductors Citation Details In-Document Search Title: Reactive codoping of GaAlInP compound semiconductors A GaAlInP compound ...

  3. Growth and Band Offsets of Epitaxial Lanthanide Oxides on GaN...

    Office of Scientific and Technical Information (OSTI)

    M.T.T., 60 (6) (2012) 3 Jon Ihlefeld, Sandia National Laboratories Electronic Materials ... Undoped GaN Undoped AlGaN Doped AlGaN 2D Electron Gas Enhancement Mode (nominally ...

  4. Long-wavelength shift and enhanced room temperature photoluminescence efficiency in GaAsSb/InGaAs/GaAs-based heterostructures emitting in the spectral range of 1.01.2??m due to increased charge carrier's localization

    SciTech Connect

    Kryzhkov, D. I. Yablonsky, A. N.; Morozov, S. V.; Aleshkin, V. Ya.; Krasilnik, Z. F.; Zvonkov, B. N.; Vikhrova, O. V.

    2014-11-28

    In this work, a study of the photoluminescence (PL) temperature dependence in quantum well GaAs/GaAsSb and double quantum well InGaAs/GaAsSb/GaAs heterostructures grown by metalorganic chemical vapor deposition with different parameters of GaAsSb and InGaAs layers has been performed. It has been demonstrated that in double quantum well InGaAs/GaAsSb/GaAs heterostructures, a significant shift of the PL peak to a longer-wavelength region (up to 1.2??m) and a considerable reduction in the PL thermal quenching in comparison with GaAs/GaAsSb structures can be obtained due to better localization of charge carriers in the double quantum well. For InGaAs/GaAsSb/GaAs heterostructures, an additional channel of radiative recombination with participation of the excited energy states in the quantum well, competing with the main ground-state radiative transition, has been revealed.

  5. An inverted AlGaAs/GaAs patterned-Ge tunnel junction cascade concentrator solar cell

    SciTech Connect

    Venkatasubramanian, R. )

    1993-01-01

    This report describes work to develop inverted-grown Al[sub 0.34]Ga[sub 0.66]As/GaAs cascades. Several significant developments are reported on as follows: (1) The AM1.5 1-sun total-area efficiency of the top Al[sub 0.34]Ga[sub 0.66]As cell for the cascade was improved from 11.3% to 13.2% (NREL measurement [total-area]). (2) The cycled'' organometallic vapor phase epitaxy growth (OMVPE) was studied in detail utilizing a combination of characterization techniques including Hall-data, photoluminescence, and secondary ion mass spectroscopy. (3) A technique called eutectic-metal-bonding (EMB) was developed by strain-free mounting of thin GaAs-AlGaAs films (based on lattice-matched growth on Ge substrates and selective plasma etching of Ge substrates) onto Si carrier substrates. Minority-carrier lifetime in an EMB GaAs double-heterostructure was measured as high as 103 nsec, the highest lifetime report for a freestanding GaAs thin film. (4) A thin-film, inverted-grown GaAs cell with a 1-sun AM1.5 active-area efficiency of 20.3% was obtained. This cell was eutectic-metal-bonded onto Si. (5) A thin-film inverted-grown, Al[sub 0.34]Ga[sub 0.66]As/GaAs cascade with AM1.5 efficiency of 19.9% and 21% at 1-sun and 7-suns, respectively, was obtained. This represents an important milestone in the development of an AlGaAs/GaAs cascade by OMVPE utilizing a tunnel interconnect and demonstrates a proof-of-concept for the inverted-growth approach.

  6. DC characteristics of OMVPE-grown N-p-n InGaP/InGaAsN DHBTs

    SciTech Connect

    Li, N.Y.; Chang, P.C.; Baca, A.G.; Xie, X.M.; Sharps, P.R.; Hou, H.Q.

    2000-01-04

    The authors demonstrate, for the first time, a functional N-p-n heterojunction bipolar transistor using a novel material, InGaAsN, with a bandgap energy of 1.2eV as the p-type base layer. A 300{angstrom}-thick In{sub x}Ga{sub 1-x}As graded layer was introduced to reduce the conduction band offset at the p-type InGaAsN base and n-type GaAs collector junction. For an emitter size of 500 {mu}m{sup 2}, a peak current gain of 5.3 has been achieved.

  7. Interfacial bonding and electronic structure of GaN/GaAs interface: A first-principles study

    SciTech Connect

    Cao, Ruyue; Zhang, Zhaofu; Wang, Changhong; Li, Haobo; Dong, Hong; Liu, Hui; Wang, Weichao; Xie, Xinjian

    2015-04-07

    Understanding of GaN interfacing with GaAs is crucial for GaN to be an effective interfacial layer between high-k oxides and III-V materials with the application in high-mobility metal-oxide-semiconductor field effect transistor (MOSFET) devices. Utilizing first principles calculations, here, we investigate the structural and electronic properties of the GaN/GaAs interface with respect to the interfacial nitrogen contents. The decrease of interfacial N contents leads to more Ga dangling bonds and As-As dimers. At the N-rich limit, the interface with N concentration of 87.5% shows the most stability. Furthermore, a strong band offsets dependence on the interfacial N concentration is also observed. The valance band offset of N7 with hybrid functional calculation is 0.51 eV. The electronic structure analysis shows that significant interface states exist in all the GaN/GaAs models with various N contents, which originate from the interfacial dangling bonds and some unsaturated Ga and N atoms. These large amounts of gap states result in Fermi level pinning and essentially degrade the device performance.

  8. Transportation of foreign-owned enriched uranium from the Republic of Georgia. Environmental assessment for Project Partnership

    SciTech Connect

    1998-03-31

    The Department of Energy (DOE) Office of Nonproliferation and National Security (NN) has prepared a classified environmental assessment to evaluate the potential environmental impact for the transportation of 5.26 kilograms of enriched uranium-235 in the form of nuclear fuel, from the Republic of Georgia to the United Kingdom. The nuclear fuel consists of primarily fresh fuel, but also consists of a small quantity (less than 1 kilogram) of partially-spent fuel. Transportation of the enriched uranium fuel would occur via US Air Force military aircraft under the control of the Defense Department European Command (EUCOM). Actions taken in a sovereign nation (such as the Republic of Georgia and the United Kingdom) are not subject to analysis in the environmental assessment. However, because the action would involve the global commons of the Black Sea and the North Sea, the potential impact to the global commons has been analyzed. Because of the similarities in the two actions, the Project Sapphire Environmental Assessment was used as a basis for assessing the potential impacts of Project Partnership. However, because Project Partnership involves a small quantity of partially-spent fuel, additional analysis was conducted to assess the potential environmental impacts and to consider reasonable alternatives as required by NEPA. The Project Partnership Environmental Assessment found the potential environmental impacts to be well below those from Project Sapphire.

  9. Self-catalyzed growth of dilute nitride GaAs/GaAsSbN/GaAs core-shell nanowires by molecular beam epitaxy

    SciTech Connect

    Kasanaboina, Pavan Kumar; Ahmad, Estiak; Li, Jia; Iyer, Shanthi; Reynolds, C. Lewis; Liu, Yang

    2015-09-07

    Bandgap tuning up to 1.3 μm in GaAsSb based nanowires by incorporation of dilute amount of N is reported. Highly vertical GaAs/GaAsSbN/GaAs core-shell configured nanowires were grown for different N contents on Si (111) substrates using plasma assisted molecular beam epitaxy. X-ray diffraction analysis revealed close lattice matching of GaAsSbN with GaAs. Micro-photoluminescence (μ-PL) revealed red shift as well as broadening of the spectra attesting to N incorporation in the nanowires. Replication of the 4K PL spectra for several different single nanowires compared to the corresponding nanowire array suggests good compositional homogeneity amongst the nanowires. A large red shift of the Raman spectrum and associated symmetric line shape in these nanowires have been attributed to phonon localization at point defects. Transmission electron microscopy reveals the dominance of stacking faults and twins in these nanowires. The lower strain present in these dilute nitride nanowires, as opposed to GaAsSb nanowires having the same PL emission wavelength, and the observation of room temperature PL demonstrate the advantage of the dilute nitride system offers in the nanowire configuration, providing a pathway for realizing nanoscale optoelectronic devices in the telecommunication wavelength region.

  10. Localized corrosion of GaAs surfaces and formation of porous GaAs

    SciTech Connect

    Schmuki, P.; Vitus, C.M.; Isaacs, H.S.; Fraser, J.; Graham, M.J.

    1995-12-01

    The present work deals with pitting corrosion of p- and n-type GaAs (100). Pit growth can be electrochemically initiated on both conduction types in chloride-containing solutions and leads after extended periods of time to the formation of a porous GaAs structure. In the case of p-type material, localized corrosion is only observed if a passivating film is present on the surface, otherwise -- e.g. in acidic solutions -- the material suffers from a uniform attack (electropolishing) which is independent of the anion present. In contrast, pitting corrosion of n-type material can be triggered independent of the presence of an oxide film. This is explained in terms of the different current limiting factor for the differently doped materials (oxide film in the case of the p- and a space charge layer in the case of the n-GaAs). The porous structure was characterized by SEM, EDX and AES, and consists mainly of GaAs. From scratch experiments it is clear that the pit initiation process is strongly influenced by surface defects. For n-type material, AFM investigations show that light induced roughening of the order of several hundred nm occurs under non-passivating conditions. This nm- scale roughening however does not affect the pitting process.

  11. AlGaAs/InGaAlP tunnel junctions for multijunction solar cells

    SciTech Connect

    SHARPS,P.R.; LI,N.Y.; HILLS,J.S.; HOU,H.; CHANG,PING-CHIH; BACA,ALBERT G.

    2000-05-16

    Optimization of GaInP{sub 2}/GaAs dual and GaInP{sub 2}/GaAs/Ge triple junction cells, and development of future generation monolithic multi-junction cells will involve the development of suitable high bandgap tunnel junctions. There are three criteria that a tunnel junction must meet. First, the resistance of the junction must be kept low enough so that the series resistance of the overall device is not increased. For AMO, 1 sun operation, the tunnel junction resistance should be below 5 x 10{sup {minus}2} {Omega}-cm. Secondly, the peak current density for the tunnel junction must also be larger than the J{sub sc} of the cell so that the tunnel junction I-V curve does not have a deleterious effect on the I-V curve of the multi-junction device. Finally, the tunnel junction must be optically transparent, i.e., there must be a minimum of optical absorption of photons that will be collected by the underlying subcells. The paper reports the investigation of four high bandgap tunnel junctions grown by metal-organic chemical vapor deposition.

  12. High-Efficiency GaInP/GaAs Tandem Solar Cells

    SciTech Connect

    Bertness, K. A.; Friedman, D. J.; Kurtz, S. R.; Kibbler, A. E.; Cramer, C.; Olson, J. M.

    1996-09-01

    GaInP/GaAs tandem solar cells have achieved efficiencies between 25.7-30.2%, depending on illumination conditions. The efficiencies are the highest confirmed two-terminal values measured for any solar cell within each standard illumination category. The monolithic, series-connected design of the tandem cells allows them to be substituted for silicon or gallium arsenide cells in photovoltaic panel systems with minimal design changes. The advantages of using GaInP/GaAs tandem solar cells in space and terrestrial applications are discussed primarily in terms of the reduction in balance-of-system costs that accrues when using a higher efficiency cell. The new efficiency values represent a significant improvement over previous efficiencies for this materials system, and we identify grid design, back interface passivation, and top interface passivation as the three key factors leading to this improvement. In producing the high-efficiency cells, we have addressed nondestructive diagnostics and materials growth reproducibility as well as peak cell performance.

  13. High-efficiency GaInP/GaAs tandem solar cells

    SciTech Connect

    Bertness, K.A.; Friedman, D.J.; Kurtz, S.R.; Kibbler, A.E.; Kramer, C.; Olson, J.M.

    1994-12-01

    GaInP/GaAs tandem solar cells have achieved new record efficiencies, specifically 25.7% under air-mass 0 (AM0) illumination, 29.5% under AM 1.5 global (AM1.5G) illumination, and 30.2% at 140-180x concentration under AM 1.5 direct (AM1.5D) illumination. These values are the highest two-terminal efficiencies achieved by any solar cell under these illumination conditions. The monolithic, series-connected design of the tandem cells allows them to be substituted for silicon or gallium arsenide cells in photovoltaic panel systems with minimal design changes. The advantages of using GaInP/GaAs tandem solar cells in space and terrestrial applications are discussed primarily in terms of the reduction in balance-of-system costs that accrues when using a higher efficiency cell. The new efficiency values represent a significant improvement over previous efficiencies for this materials system, and we identify grid design, back interface passivation, and top interface passivation as the three key factors leading to this improvement. In producing the high-efficiency cells, we have addressed nondestructive diagnostics and materials growth reproducibility as well as peak cell performance. 31 refs.

  14. TJ Solar Cell (GaInP/GaAs/Ge Ultrahigh-Efficiency Solar Cells

    SciTech Connect

    Friedman, Daniel

    2002-04-17

    This talk will discuss recent developments in III-V multijunction photovoltaic technology which have led to the highest-efficiency solar cells ever demonstrated. The relationship between the materials science of III-V semiconductors and the achievement of record solar cell efficiencies will be emphasized. For instance, epitaxially-grown GAInP has been found to form a spontaneously-ordered GaP/InP (111) superlattice. This ordering affects the band gap of the material, which in turn affects the design of solar cells which incorporate GaInP. For the next generation of ultrahigh-efficiency III-V solar cells, we need a new semiconductor which is lattice-matched to GaAs, has a band gap of 1 eV, and has long minority-carrier diffusion lengths. Out of a number of candidate materials, the recently-discovered alloy GaInNAs appears to have the greatest promise. This material satisfies the first two criteria, but has to date shown very low diffusion lengths, a problem which is our current focus in the development of these next-generation cells.

  15. Multijunction GaInP/GaInAs/Ge solar cells with Bragg reflectors

    SciTech Connect

    Emelyanov, V. M. Kalyuzhniy, N. A.; Mintairov, S. A.; Shvarts, M. Z.; Lantratov, V. M.

    2010-12-15

    Effect of subcell parameters on the efficiency of GaInP/Ga(In)As/Ge tandem solar cells irradiated with 1-MeV electrons at fluences of up to 3 x 10{sup 15} cm{sup -2} has been theoretically studied. The optimal thicknesses of GaInP and GaInAs subcells, which provide the best photocurrent matching at various irradiation doses in solar cells with and without built-in Bragg reflectors, were determined. The dependences of the photoconverter efficiency on the fluence of 1-MeV electrons and on the time of residence in the geostationary orbit were calculated for structures optimized to the beginning and end of their service lives. It is shown that the optimization of the subcell heterostructures for a rated irradiation dose and the introduction of Bragg reflectors into the structure provide a 5% overall increase in efficiency for solar cells operating in the orbit compared with unoptimized cells having no Bragg reflector.

  16. GaP/Si heterojunction Solar Cells

    SciTech Connect

    Saive, R.; Chen, C.; Emmer, H.; Atwater, H.

    2015-05-11

    Improving the efficiency of solar cells requires the introduction of novel device concepts. Recent developments have shown that in Si solar cell technology there is still room for tremendous improvement. Using the heterojunction with intrinsic thin layer (HIT) approach 25.6 % power conversion efficiency was achieved. However, a-Si as a window and passivation layer comes with disadvantages as a-Si shows low conductivity and high parasitic absorption. Therefore, it is likely that using a crystalline material as window layer with high band gab and high mobility can further improve efficiency. We have studied GaP grown by MOCVD on Si with (001) and (112) orientation. We obtained crystalline layers with carrier mobility around 100 cm2/Vs and which passivate Si as confirmed by carrier lifetime measurements. We performed band alignment studies by X-ray photoelectron spectroscopy yielding a valence band offset of 0.3 eV. Comparing this value with the Schottky-model leads to an interface dipole of 0.59 eV. The open circuit voltage increases with increasing doping and is consistent with the theoretical open circuit voltage deduced from work function difference and interface dipole. We obtain an open circuit voltage of 0.38 V for n-doped GaP with doping levels in the order of 10^17 1/cm^3. In our next steps we will increase the doping level further in order to gain higher open circuit voltage. We will discuss the implications of these findings for GaP/Si heterojunction solar cells.

  17. A monolithic white LED with an active region based on InGaN QWs separated by short-period InGaN/GaN superlattices

    SciTech Connect

    Tsatsulnikov, A. F. Lundin, W. V.; Sakharov, A. V.; Zavarin, E. E.; Usov, S. O.; Nikolaev, A. E.; Kryzhanovskaya, N. V.; Synitsin, M. A.; Sizov, V. S.; Zakgeim, A. L.; Mizerov, M. N.

    2010-06-15

    A new approach to development of effective monolithic white-light emitters is described based on using a short-period InGaN/GaN superlattice as a barrier layer in the active region of LED structures between InGaN quantum wells emitting in the blue and yellow-green spectral ranges. The optical properties of structures of this kind have been studied, and it is demonstrated that the use of such a superlattice makes it possible to obtain effective emission from the active region.

  18. Reliability of AlGaN/GaN high electron mobility transistors on low dislocation density bulk GaN substrate: Implications of surface step edges

    SciTech Connect

    Killat, N. E-mail: Martin.Kuball@bristol.ac.uk; Montes Bajo, M.; Kuball, M. E-mail: Martin.Kuball@bristol.ac.uk; Paskova, T.; Materials Science and Engineering Department, North Carolina State University, Raleigh, North Carolina 27695 ; Evans, K. R.; Leach, J.; Electrical and Computer Engineering Department, Virginia Commonwealth University, Richmond, Virginia 23284 ; Li, X.; Özgür, Ü.; Morkoç, H.; Chabak, K. D.; Crespo, A.; Gillespie, J. K.; Fitch, R.; Kossler, M.; Walker, D. E.; Trejo, M.; Via, G. D.; Blevins, J. D.

    2013-11-04

    To enable gaining insight into degradation mechanisms of AlGaN/GaN high electron mobility transistors, devices grown on a low-dislocation-density bulk-GaN substrate were studied. Gate leakage current and electroluminescence (EL) monitoring revealed a progressive appearance of EL spots during off-state stress which signify the generation of gate current leakage paths. Atomic force microscopy evidenced the formation of semiconductor surface pits at the failure location, which corresponds to the interaction region of the gate contact edge and the edges of surface steps.

  19. Methane Hydrate Advisory Committee Meeting Minutes, January 2010...

    Energy.gov [DOE] (indexed site)

    0 Atlanta, GA Methane Hydrate Advisory Committee Meeting Minutes, January 2010 More Documents & Publications Methane Hydrate Advisory Committee Meeting Minutes, March 2010 Methane...

  20. DOE Pens New Agreement with Southern Company to Test Advanced...

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    Southern Company (Atlanta, Ga.) will test both pre- and post-combustion ... with DOE. The NCCC is equipped to test multiple slipstreams from diverse fuel ...

  1. TTW 7-2-10

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    ... -- As Delivered Secretary Moniz's Keynote at the Sam Nunn Policy Forum in Atlanta, GA -- As Delivered Secretary Moniz Remarks to the National Coal Council -- As Delivered

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  7. Industrial Feedstock Flexibility Workshop Results

    SciTech Connect

    Ozokwelu, Dickson; Margolis, Nancy; Justiniano, Mauricio; Monfort, Joe; Brueske, Sabine; Sabouni, Ridah

    2009-08-01

    This report (PDF 649 KB) summarizes the results of the 2009 Industrial Feedstock Flexibility Workshop, which took place in Atlanta, GA on August 19-20, 2009.

  8. Analysis Methods and Tools Standing Technical Committee Strategic...

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    ... addressing this gap has high value if satisfactory existing data sets can be found. ... Atlanta, GA, USA: American Society of Heating, Refrigerating and Air-Conditioning ...

  9. QER- Comment of Stephen Arthur 1

    Energy.gov [DOE]

    Good morning, I simply was curious if the Atlanta, GA meeting on Business/Economic Development was still on schedule and going to take place?

  10. 2015 University Turbine Systems Research Workshop

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    University Turbine Systems Research Workshop November 3-5, 2015 Accommodations Georgian Terrace Hotel 659 Peachtree Street, NE Atlanta, GA 30308 The Georgian Terrace Hotel will be...

  11. Microfabricated Optical Compressive Load Sensors (Conference...

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    DOE Contract Number: W-7405-ENG-48 Resource Type: Conference Resource Relation: Conference: Presented at: IEEE Sensors 2007, Atlanta, GA, United States, Oct 28 - Oct 31, 2007 ...

  12. A new pre-processing method for scanning X-ray microdiffraction...

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  1. bectcom-ensorb | netl.doe.gov

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    ... Second Annual Clean Coal Technology Conference, Atlanta, GA Flue Gas Humidification for ESP Performance Enhancement (Oct 1993) R.A. Ashworth, et al., International Joint Power ...

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    (Pennsylvania Electric Company), Second Annual Clean Coal Technology Conference, Atlanta, GA. U.S. Department of Energy report CONF-9309152. Update and Results of Bechtel's ...

  5. Sandia National Laboratories: 13,051 lbs of Carpet Sent for Reuse

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    Previous shipments sent out for recycle were delivered to Interface Carpet in Atlanta, GA, where the manufacture has an extensive recycling program that recycles vinyl backed ...

  6. ORISE Resources: Population Monitoring in Radiation Emergencies

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    and Mapping ) Deputy Sean Alexander, Houston County Sheriff's Office, (Metro Atlanta, GA) 1030 to 1200 Criminalistics: Using Crime Labs in your Investigations (Evidence ...

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    Conferences APS DPP 2009 Meeting, Atlanta, GA, November 2-6, 2009 Zane Taylor, Strategies for Observing Self-excitation in the Madison Dynamo Experiment Elliot Kaplan, Perturbative ...

  11. Other Participants 1993 | U.S. DOE Office of Science (SC)

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    Downey High School , Modesto , CA Venice High School , Los Angeles , CA Walt Whitman High School , Bethesda , MD Westminster School , Atlanta , GA Woodbridge High School , Irvine

  12. bia-cemkiln | netl.doe.gov

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    (Passamaquoddy Technology, L.P.), Second Annual Clean Coal Technology Conference, Atlanta, GA. U.S. Department of Energy report CONF-9309152. Recovery Scrubber Installation and ...

  13. Microsoft Word - Tribal Call Jan 17 Summary 1-25-07 wep

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  14. The Advancing Date of Spring Snowmelt in the Alaskan Artic

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    the Arctic energy budget, a better understanding of why snow cover varies is needed. ... The 1 Eleventh ARM Science Team Meeting Proceedings, Atlanta, Georgia, March 19-23, 2001 ...

  15. CX-006754: Categorical Exclusion Determination

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    Theory, Investigation and Stability of Cathode Electrocatalytic ActivityCX(s) Applied: B3.6Date: 09/13/2011Location(s): Atlanta, GeorgiaOffice(s): Fossil Energy, National Energy Technology Laboratory

  16. Slide 1

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    Training Meeting Atlanta, Georgia-May 22-24, 2007 Sponsored by the U.S. Department of Energy & the U.S. Nuclear Regulatory Commission NM M SS NM M SS NM M SS NM M SS Topics *...

  17. --No Title--

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    Training Meeting Atlanta, Georgia-May 22-24, 2007 Sponsored by the U.S. Department of Energy & the U.S. Nuclear Regulatory Commission NM M SS NM M SS NM M SS NM M SS Topics *...

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