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Electron-beam-induced conduction in dielectrics

Journal Article:

Abstract

A model for the enhanced conduction induced in dielectric films under electron bombardment while electrically stressed is discussed. It is assumed that the beam produces a virtual electrode at the end of its range in the dielectric and, as a consequence, the induced conduction is shown to depend on the properties of that part of the dielectric beyond the range of the beam. This model has also been discussed recently by Nunes de Oliviera and Gross. In the present treatment, it is shown how the model permits investigation of beam scattering and carrier generation and recombination processes. Experiments on electron-bombardment-induced conduction of thin (72 to 360 nm) films of anodic tantalum oxide are reported and it is shown that the theoretical model provides a very satisfactory explanation of all features of the results including the apparent threshold energy for enhanced conduction.
Authors:
Acris, F C; Davies, P M; Lewis, T J [1] 
  1. University Coll. of North Wales, Bangor (UK). School of Electronic Engineering Science
Publication Date:
Mar 14, 1976
Product Type:
Journal Article
Reference Number:
AIX-07-246582; EDB-76-087339
Resource Relation:
Journal Name: J. Phys., C (London); (United Kingdom); Journal Volume: 9:5
Subject:
36 MATERIALS SCIENCE; DIELECTRIC MATERIALS; PHYSICAL RADIATION EFFECTS; TANTALUM OXIDES; ELECTRIC CONDUCTIVITY; ELECTRIC FIELDS; ELECTRIC POTENTIAL; ELECTRON BEAMS; FILMS; STRESSES; BEAMS; CHALCOGENIDES; ELECTRICAL PROPERTIES; LEPTON BEAMS; OXIDES; OXYGEN COMPOUNDS; PARTICLE BEAMS; PHYSICAL PROPERTIES; RADIATION EFFECTS; TANTALUM COMPOUNDS; TRANSITION ELEMENT COMPOUNDS; 360206* - Ceramics, Cermets, & Refractories- Radiation Effects
OSTI ID:
7341371
Country of Origin:
United Kingdom
Language:
English
Other Identifying Numbers:
Journal ID: CODEN: JPCPA
Submitting Site:
INIS
Size:
Pages: 797-808
Announcement Date:

Journal Article:

Citation Formats

Acris, F C, Davies, P M, and Lewis, T J. Electron-beam-induced conduction in dielectrics. United Kingdom: N. p., 1976. Web.
Acris, F C, Davies, P M, & Lewis, T J. Electron-beam-induced conduction in dielectrics. United Kingdom.
Acris, F C, Davies, P M, and Lewis, T J. 1976. "Electron-beam-induced conduction in dielectrics." United Kingdom.
@misc{etde_7341371,
title = {Electron-beam-induced conduction in dielectrics}
author = {Acris, F C, Davies, P M, and Lewis, T J}
abstractNote = {A model for the enhanced conduction induced in dielectric films under electron bombardment while electrically stressed is discussed. It is assumed that the beam produces a virtual electrode at the end of its range in the dielectric and, as a consequence, the induced conduction is shown to depend on the properties of that part of the dielectric beyond the range of the beam. This model has also been discussed recently by Nunes de Oliviera and Gross. In the present treatment, it is shown how the model permits investigation of beam scattering and carrier generation and recombination processes. Experiments on electron-bombardment-induced conduction of thin (72 to 360 nm) films of anodic tantalum oxide are reported and it is shown that the theoretical model provides a very satisfactory explanation of all features of the results including the apparent threshold energy for enhanced conduction.}
journal = {J. Phys., C (London); (United Kingdom)}
volume = {9:5}
journal type = {AC}
place = {United Kingdom}
year = {1976}
month = {Mar}
}