Abstract
This review is concerned with the physical phenomena responsible for the nucleation, growth and structure of films. Emphasis is placed on the study of films of solid-metal systems, semiconductors (In, As, Cd, Se, CdS), and dielectrics. The following problems are discussed in the paper: general regularities of the thermodynamics and kinetics of film formation, methods of obtaining a solid film, the process of film formation, the rate of growth of individual grains. The critical film thickness and its measurement are also considered. The results of investigating the process of formation of mono- and polycrystalline films are discussed. It is concluded, on the basis of studies into the relaxation processes accompanying the growth of films, that an insight into these processes will permits improving film properties.
Aleksandrov, L N
[1]
- AN SSSR, Novosibirsk. Inst. Fiziki Poluprovodnikov
Citation Formats
Aleksandrov, L N.
Physical phenomena stipulating nucleus formation, growth and structure films.
USSR: N. p.,
1975.
Web.
Aleksandrov, L N.
Physical phenomena stipulating nucleus formation, growth and structure films.
USSR.
Aleksandrov, L N.
1975.
"Physical phenomena stipulating nucleus formation, growth and structure films."
USSR.
@misc{etde_7330769,
title = {Physical phenomena stipulating nucleus formation, growth and structure films}
author = {Aleksandrov, L N}
abstractNote = {This review is concerned with the physical phenomena responsible for the nucleation, growth and structure of films. Emphasis is placed on the study of films of solid-metal systems, semiconductors (In, As, Cd, Se, CdS), and dielectrics. The following problems are discussed in the paper: general regularities of the thermodynamics and kinetics of film formation, methods of obtaining a solid film, the process of film formation, the rate of growth of individual grains. The critical film thickness and its measurement are also considered. The results of investigating the process of formation of mono- and polycrystalline films are discussed. It is concluded, on the basis of studies into the relaxation processes accompanying the growth of films, that an insight into these processes will permits improving film properties.}
journal = []
volume = {4:2}
journal type = {AC}
place = {USSR}
year = {1975}
month = {Mar}
}
title = {Physical phenomena stipulating nucleus formation, growth and structure films}
author = {Aleksandrov, L N}
abstractNote = {This review is concerned with the physical phenomena responsible for the nucleation, growth and structure of films. Emphasis is placed on the study of films of solid-metal systems, semiconductors (In, As, Cd, Se, CdS), and dielectrics. The following problems are discussed in the paper: general regularities of the thermodynamics and kinetics of film formation, methods of obtaining a solid film, the process of film formation, the rate of growth of individual grains. The critical film thickness and its measurement are also considered. The results of investigating the process of formation of mono- and polycrystalline films are discussed. It is concluded, on the basis of studies into the relaxation processes accompanying the growth of films, that an insight into these processes will permits improving film properties.}
journal = []
volume = {4:2}
journal type = {AC}
place = {USSR}
year = {1975}
month = {Mar}
}