You need JavaScript to view this

A linear two-layer model for flat-band shift in irradiated MOS devices

Abstract

A closed-form mathematical expression is derived for the flat-band shift as a function of gate bias during electron irradiation. The model assumes that the charge in the oxide consists of charged layers of variable thickness at each of the two interfaces, depending on voltage polarity and magnitude. The region of extreme linearity which has been observed by numerous investigators and which normally occurs for the relatively small values of gate bias voltages fits this closed-form solution. Analytical results compare favourably with data obtained from 500 to 700 A thick oxides and with other previously published data.
Authors:
Churchill, J N; Holstrom, F E; Collins, T W [1] 
  1. International Business Machines Corp., San Jose, Calif. (USA)
Publication Date:
Apr 01, 1976
Product Type:
Journal Article
Reference Number:
AIX-07-249483; EDB-76-087898
Resource Relation:
Journal Name: Solid-State Electron.; (United Kingdom); Journal Volume: 19:4
Subject:
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; MOS TRANSISTORS; PHYSICAL RADIATION EFFECTS; ELECTRIC CHARGES; ELECTRIC POTENTIAL; ELECTRON BEAMS; LAYERS; MATHEMATICAL MODELS; BEAMS; LEPTON BEAMS; PARTICLE BEAMS; RADIATION EFFECTS; SEMICONDUCTOR DEVICES; TRANSISTORS; 440200* - Radiation Effects on Instrument Components, Instruments, or Electronic Systems
OSTI ID:
7265466
Country of Origin:
United Kingdom
Language:
English
Other Identifying Numbers:
Journal ID: CODEN: SSELA
Submitting Site:
INIS
Size:
Pages: 291-296
Announcement Date:

Citation Formats

Churchill, J N, Holstrom, F E, and Collins, T W. A linear two-layer model for flat-band shift in irradiated MOS devices. United Kingdom: N. p., 1976. Web. doi:10.1016/0038-1101(76)90025-3.
Churchill, J N, Holstrom, F E, & Collins, T W. A linear two-layer model for flat-band shift in irradiated MOS devices. United Kingdom. doi:10.1016/0038-1101(76)90025-3.
Churchill, J N, Holstrom, F E, and Collins, T W. 1976. "A linear two-layer model for flat-band shift in irradiated MOS devices." United Kingdom. doi:10.1016/0038-1101(76)90025-3. https://www.osti.gov/servlets/purl/10.1016/0038-1101(76)90025-3.
@misc{etde_7265466,
title = {A linear two-layer model for flat-band shift in irradiated MOS devices}
author = {Churchill, J N, Holstrom, F E, and Collins, T W}
abstractNote = {A closed-form mathematical expression is derived for the flat-band shift as a function of gate bias during electron irradiation. The model assumes that the charge in the oxide consists of charged layers of variable thickness at each of the two interfaces, depending on voltage polarity and magnitude. The region of extreme linearity which has been observed by numerous investigators and which normally occurs for the relatively small values of gate bias voltages fits this closed-form solution. Analytical results compare favourably with data obtained from 500 to 700 A thick oxides and with other previously published data.}
doi = {10.1016/0038-1101(76)90025-3}
journal = {Solid-State Electron.; (United Kingdom)}
volume = {19:4}
journal type = {AC}
place = {United Kingdom}
year = {1976}
month = {Apr}
}