Abstract
In the nanotechnology to realize an artificial structure of a magnitude of atomic size, new electron devices and photon devices are aimed by confining electron and controlling the behavior of the electron with transition of a quantum mechanical state including a tunneling effect. The degree of freedom of electron decreased when electron is confined in a very small area within semiconductor and is 1 in a quantum wire while it is 0 in a quantum box. Energy level of electron is completely dispersed. The condition required to realize the nanometer structure is examined and the formation techniques of semiconductor nanometer structure are studied. This paper describes research results by the authors aiming to realize quantum wire and quantum box structures. Ultrafine pattern of SiO2 is formed by electron beam drawing technique followed by crystal growth with a MOCVD method to form the quantum wire and quantum box structures successfully. Laser oscillation is successful at 77K with optical pumping using a quantum wire and vertical micro resonator. 5 refs., 7 figs.
Arakawa, Y
[1]
- The Univ. of Tokyo, Tokyo (Japan). Inst. of Industrial Science
Citation Formats
Arakawa, Y.
Frontier of nanometer devices. Part 6. New devices with fully controlled electrons and photons. Nanometa debaisu kenkyu saizensen. 6. Denshi to koshi no kanzen seigyo wo mezashita jisedai debaisu.
Japan: N. p.,
1994.
Web.
Arakawa, Y.
Frontier of nanometer devices. Part 6. New devices with fully controlled electrons and photons. Nanometa debaisu kenkyu saizensen. 6. Denshi to koshi no kanzen seigyo wo mezashita jisedai debaisu.
Japan.
Arakawa, Y.
1994.
"Frontier of nanometer devices. Part 6. New devices with fully controlled electrons and photons. Nanometa debaisu kenkyu saizensen. 6. Denshi to koshi no kanzen seigyo wo mezashita jisedai debaisu."
Japan.
@misc{etde_7083487,
title = {Frontier of nanometer devices. Part 6. New devices with fully controlled electrons and photons. Nanometa debaisu kenkyu saizensen. 6. Denshi to koshi no kanzen seigyo wo mezashita jisedai debaisu}
author = {Arakawa, Y}
abstractNote = {In the nanotechnology to realize an artificial structure of a magnitude of atomic size, new electron devices and photon devices are aimed by confining electron and controlling the behavior of the electron with transition of a quantum mechanical state including a tunneling effect. The degree of freedom of electron decreased when electron is confined in a very small area within semiconductor and is 1 in a quantum wire while it is 0 in a quantum box. Energy level of electron is completely dispersed. The condition required to realize the nanometer structure is examined and the formation techniques of semiconductor nanometer structure are studied. This paper describes research results by the authors aiming to realize quantum wire and quantum box structures. Ultrafine pattern of SiO2 is formed by electron beam drawing technique followed by crystal growth with a MOCVD method to form the quantum wire and quantum box structures successfully. Laser oscillation is successful at 77K with optical pumping using a quantum wire and vertical micro resonator. 5 refs., 7 figs.}
journal = []
volume = {114:6}
journal type = {AC}
place = {Japan}
year = {1994}
month = {Jun}
}
title = {Frontier of nanometer devices. Part 6. New devices with fully controlled electrons and photons. Nanometa debaisu kenkyu saizensen. 6. Denshi to koshi no kanzen seigyo wo mezashita jisedai debaisu}
author = {Arakawa, Y}
abstractNote = {In the nanotechnology to realize an artificial structure of a magnitude of atomic size, new electron devices and photon devices are aimed by confining electron and controlling the behavior of the electron with transition of a quantum mechanical state including a tunneling effect. The degree of freedom of electron decreased when electron is confined in a very small area within semiconductor and is 1 in a quantum wire while it is 0 in a quantum box. Energy level of electron is completely dispersed. The condition required to realize the nanometer structure is examined and the formation techniques of semiconductor nanometer structure are studied. This paper describes research results by the authors aiming to realize quantum wire and quantum box structures. Ultrafine pattern of SiO2 is formed by electron beam drawing technique followed by crystal growth with a MOCVD method to form the quantum wire and quantum box structures successfully. Laser oscillation is successful at 77K with optical pumping using a quantum wire and vertical micro resonator. 5 refs., 7 figs.}
journal = []
volume = {114:6}
journal type = {AC}
place = {Japan}
year = {1994}
month = {Jun}
}