You need JavaScript to view this

Silicide formation by Ar/sup +/ ion bombardment of Pd/Si

Journal Article:

Abstract

Palladium films, 45 nm thick, evaporated on to Si(111) were irradiated to various doses with 78 keV Ar/sup +/ ions to promote silicide formation. Rutherford backscattering spectroscopy (RBS) shows that intermixing has occurred across the Pd/Si interface at room temperature. The mixing behaviour is increased with dose which coincides well with the theoretical model of cascade mixing. The absence of deep RBS tails for palladium and the small area of this for silicon spectra indicate that short-range mixing occurs. From the calculated damage profiles computed with TRIM code, the dominant diffusion species is found to be silicon atoms in the Pd/Si system. It is also found that the initial compound formed by Ar/sup +/ irradiation is Pd/sub 2/Si which increases with dose. At a dose of 1 x 10/sup 16/ Ar/sup +/ cm/sup -2/, a 48 nm thickness of Pd/sub 2/Si was formed by ion-beam mixing at room temperature.
Publication Date:
Aug 01, 1988
Product Type:
Journal Article
Reference Number:
GBN-88-004763; EDB-88-185086
Resource Relation:
Journal Name: J. Mater. Sci.; (United Kingdom); Journal Volume: 23:8
Subject:
36 MATERIALS SCIENCE; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; MIXING; ION BEAMS; PALLADIUM SILICIDES; ARGON IONS; BACKSCATTERING; COMPUTERIZED SIMULATION; DEPTH; DIFFUSION; INTERFACES; PALLADIUM; RUTHERFORD SCATTERING; SILICON; SPATIAL DISTRIBUTION; THIN FILMS; VACANCIES; BEAMS; CHARGED PARTICLES; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; DIMENSIONS; DISTRIBUTION; ELASTIC SCATTERING; ELEMENTS; FILMS; IONS; METALS; PALLADIUM COMPOUNDS; PLATINUM METALS; POINT DEFECTS; SCATTERING; SEMIMETALS; SILICIDES; SILICON COMPOUNDS; SIMULATION; TRANSITION ELEMENT COMPOUNDS; TRANSITION ELEMENTS; 360605* - Materials- Radiation Effects; 656003 - Condensed Matter Physics- Interactions between Beams & Condensed Matter- (1987-)
OSTI ID:
6748970
Research Organizations:
Dankook Univ., Choong Nam (KR). Dept. of Material Science and Engineering; Yonsei Univ., Seoul (KR). Dept. of Physics; Montana State Univ., Bozeman (USA). Dept. of Physics
Country of Origin:
United Kingdom
Language:
English
Other Identifying Numbers:
Journal ID: CODEN: JMTSA
Submitting Site:
GBN
Size:
Pages: 2740-2744
Announcement Date:

Journal Article:

Citation Formats

Lee, R Y, Whang, C N, Kim, H K, and Smith, R J. Silicide formation by Ar/sup +/ ion bombardment of Pd/Si. United Kingdom: N. p., 1988. Web.
Lee, R Y, Whang, C N, Kim, H K, & Smith, R J. Silicide formation by Ar/sup +/ ion bombardment of Pd/Si. United Kingdom.
Lee, R Y, Whang, C N, Kim, H K, and Smith, R J. 1988. "Silicide formation by Ar/sup +/ ion bombardment of Pd/Si." United Kingdom.
@misc{etde_6748970,
title = {Silicide formation by Ar/sup +/ ion bombardment of Pd/Si}
author = {Lee, R Y, Whang, C N, Kim, H K, and Smith, R J}
abstractNote = {Palladium films, 45 nm thick, evaporated on to Si(111) were irradiated to various doses with 78 keV Ar/sup +/ ions to promote silicide formation. Rutherford backscattering spectroscopy (RBS) shows that intermixing has occurred across the Pd/Si interface at room temperature. The mixing behaviour is increased with dose which coincides well with the theoretical model of cascade mixing. The absence of deep RBS tails for palladium and the small area of this for silicon spectra indicate that short-range mixing occurs. From the calculated damage profiles computed with TRIM code, the dominant diffusion species is found to be silicon atoms in the Pd/Si system. It is also found that the initial compound formed by Ar/sup +/ irradiation is Pd/sub 2/Si which increases with dose. At a dose of 1 x 10/sup 16/ Ar/sup +/ cm/sup -2/, a 48 nm thickness of Pd/sub 2/Si was formed by ion-beam mixing at room temperature.}
journal = {J. Mater. Sci.; (United Kingdom)}
volume = {23:8}
journal type = {AC}
place = {United Kingdom}
year = {1988}
month = {Aug}
}