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Operating method of amorphous thin film semiconductor element

Patent:

Abstract

The existing technologies concerning amorphous thin film semiconductor elements are the technologies concerning the formation of either a thin film transistor or an amorphous Si solar cell on a substrate. In order to drive a thin film transistor for electronic equipment control by the output power of an amorphous Si solar cell, it has been obliged to drive the transistor weth an amorphous solar cell which was formed on a substrate different from that for the transistor. Accordingly, the space for the amorphous solar cell, which was formed on the different substrate, was additionally needed on the substrate for the thin film transistor. In order to solve the above problem, this invention proposes an operating method of an amorphous thin film semiconductor element that after forming an amorphous Si solar cell through lamination on the insulation coating film which covers the thin film transistor formed on the substrate, the thin film transistor is driven by the output power of this solar cell. The invention eliminates the above superfluous space and reduces the size of the amorphous thin film semiconductor element including the electric source. (3 figs)
Publication Date:
May 31, 1988
Product Type:
Patent
Report Number:
JP 63-127583(A)
Reference Number:
NEDO-88-960249; EDB-88-191185
Resource Relation:
Patent File Date: Filed date 17 Nov 1986
Subject:
14 SOLAR ENERGY; SEMICONDUCTOR DEVICES; LAYERS; OPERATION; SILICON; AMORPHOUS STATE; SOLAR CELLS; TRANSISTORS; THIN FILMS; SUBSTRATES; DIRECT ENERGY CONVERTERS; ELEMENTS; EQUIPMENT; FILMS; PHOTOELECTRIC CELLS; PHOTOVOLTAIC CELLS; SEMIMETALS; SOLAR EQUIPMENT; 140501* - Solar Energy Conversion- Photovoltaic Conversion
OSTI ID:
6706966
Country of Origin:
Japan
Language:
Japanese
Submitting Site:
NEDO
Size:
Pages: 3
Announcement Date:

Patent:

Citation Formats

Mori, Koshiro, Ono, Masaharu, Hanabusa, Akira, Osawa, Michio, and Arita, Takashi. Operating method of amorphous thin film semiconductor element. Japan: N. p., 1988. Web.
Mori, Koshiro, Ono, Masaharu, Hanabusa, Akira, Osawa, Michio, & Arita, Takashi. Operating method of amorphous thin film semiconductor element. Japan.
Mori, Koshiro, Ono, Masaharu, Hanabusa, Akira, Osawa, Michio, and Arita, Takashi. 1988. "Operating method of amorphous thin film semiconductor element." Japan.
@misc{etde_6706966,
title = {Operating method of amorphous thin film semiconductor element}
author = {Mori, Koshiro, Ono, Masaharu, Hanabusa, Akira, Osawa, Michio, and Arita, Takashi}
abstractNote = {The existing technologies concerning amorphous thin film semiconductor elements are the technologies concerning the formation of either a thin film transistor or an amorphous Si solar cell on a substrate. In order to drive a thin film transistor for electronic equipment control by the output power of an amorphous Si solar cell, it has been obliged to drive the transistor weth an amorphous solar cell which was formed on a substrate different from that for the transistor. Accordingly, the space for the amorphous solar cell, which was formed on the different substrate, was additionally needed on the substrate for the thin film transistor. In order to solve the above problem, this invention proposes an operating method of an amorphous thin film semiconductor element that after forming an amorphous Si solar cell through lamination on the insulation coating film which covers the thin film transistor formed on the substrate, the thin film transistor is driven by the output power of this solar cell. The invention eliminates the above superfluous space and reduces the size of the amorphous thin film semiconductor element including the electric source. (3 figs)}
place = {Japan}
year = {1988}
month = {May}
}