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Spin dependent surface recombination in silicon p-n junctions: the effect of irradiation

Abstract

The results are presented of an investigation of spin dependent recombination in (100) oriented, gate controlled Si diodes irradiated by 30 keV electrons. After irradiation, recombination at the Si-SiO/sub 2/ interface is increased, and saturation of the spin resonance increases the diode forward current by 5 parts in 10/sup 4/. The results cannot be described by a conventional Shockley-Read recombination model. An alternative picture is proposed involving recombination between trapped electrons and trapped holes.
Authors:
Kaplan, D; [1]  Pepper, M [2] 
  1. Laboratoire Central de Recherches, 91 - Corbeville par Orsay (France)
  2. Cambridge Univ. (UK). Cavendish Lab.
Publication Date:
Jun 01, 1980
Product Type:
Journal Article
Reference Number:
AIX-11-566274; EDB-81-027653
Resource Relation:
Journal Name: Solid State Commun.; (United Kingdom); Journal Volume: 34:10
Subject:
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; P-N JUNCTIONS; PHYSICAL RADIATION EFFECTS; ANGULAR DISTRIBUTION; CRYSTAL LATTICES; ELECTRONS; HOLES; KEV RANGE 10-100; RECOMBINATION; RESONANCE; SILICON; SPIN; SURFACES; TRAPPING; ANGULAR MOMENTUM; CRYSTAL STRUCTURE; DISTRIBUTION; ELEMENTARY PARTICLES; ELEMENTS; ENERGY RANGE; FERMIONS; JUNCTIONS; KEV RANGE; LEPTONS; PARTICLE PROPERTIES; RADIATION EFFECTS; SEMICONDUCTOR JUNCTIONS; SEMIMETALS; 440105* - Radiation Instrumentation- Radiometric Instruments- (-1987)
OSTI ID:
6693790
Country of Origin:
United Kingdom
Language:
English
Other Identifying Numbers:
Journal ID: CODEN: SSCOA
Submitting Site:
INIS
Size:
Pages: 803-805
Announcement Date:

Citation Formats

Kaplan, D, and Pepper, M. Spin dependent surface recombination in silicon p-n junctions: the effect of irradiation. United Kingdom: N. p., 1980. Web. doi:10.1016/0038-1098(80)91056-X.
Kaplan, D, & Pepper, M. Spin dependent surface recombination in silicon p-n junctions: the effect of irradiation. United Kingdom. doi:10.1016/0038-1098(80)91056-X.
Kaplan, D, and Pepper, M. 1980. "Spin dependent surface recombination in silicon p-n junctions: the effect of irradiation." United Kingdom. doi:10.1016/0038-1098(80)91056-X. https://www.osti.gov/servlets/purl/10.1016/0038-1098(80)91056-X.
@misc{etde_6693790,
title = {Spin dependent surface recombination in silicon p-n junctions: the effect of irradiation}
author = {Kaplan, D, and Pepper, M}
abstractNote = {The results are presented of an investigation of spin dependent recombination in (100) oriented, gate controlled Si diodes irradiated by 30 keV electrons. After irradiation, recombination at the Si-SiO/sub 2/ interface is increased, and saturation of the spin resonance increases the diode forward current by 5 parts in 10/sup 4/. The results cannot be described by a conventional Shockley-Read recombination model. An alternative picture is proposed involving recombination between trapped electrons and trapped holes.}
doi = {10.1016/0038-1098(80)91056-X}
journal = {Solid State Commun.; (United Kingdom)}
volume = {34:10}
journal type = {AC}
place = {United Kingdom}
year = {1980}
month = {Jun}
}