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Microdefects in neutron-transmutationaly doped silicon

Journal Article:

Abstract

Using the method of X-ray topography and high-voltage electron microscopy, the nature of microdefects and character of their changes in neutron-transmutationaly doped silicon depending on the sample prehistory and heat treatment (HT) conditions are refined. It is shown that the microstructure of neutron-transmutationaly doped dislocation-free silicon crystals depends on conditions of ingot growth and post-radiation annealing environment. Annealing in chlorine-containing atmosphere removes microdefects (MD), although in vacuum, argon or air growing MD are preserved and new MD are formed.
Publication Date:
Mar 01, 1988
Product Type:
Journal Article
Reference Number:
AIX-20-005444; EDB-89-002531
Resource Relation:
Journal Name: Izv. Akad. Nauk SSSR, Neorg. Mater.; (USSR); Journal Volume: 24:3
Subject:
36 MATERIALS SCIENCE; SILICON; CRYSTAL DEFECTS; PHYSICAL RADIATION EFFECTS; HEAT TREATMENTS; MICROSTRUCTURE; NEUTRON FLUENCE; CRYSTAL STRUCTURE; ELEMENTS; RADIATION EFFECTS; SEMIMETALS; 360106* - Metals & Alloys- Radiation Effects
OSTI ID:
6663668
Research Organizations:
Nauchno-Issledovatel'skij Fiziko-Khimicheskij Inst., Moscow (USSR)
Country of Origin:
USSR
Language:
Russian
Other Identifying Numbers:
Journal ID: CODEN: IVNMA
Submitting Site:
INIS
Size:
Pages: 375-379
Announcement Date:

Journal Article:

Citation Formats

Vysotskaya, V V, Gorin, S N, Gres'kov, I M, Sobolev, N A, and Shek, E I. Microdefects in neutron-transmutationaly doped silicon. USSR: N. p., 1988. Web.
Vysotskaya, V V, Gorin, S N, Gres'kov, I M, Sobolev, N A, & Shek, E I. Microdefects in neutron-transmutationaly doped silicon. USSR.
Vysotskaya, V V, Gorin, S N, Gres'kov, I M, Sobolev, N A, and Shek, E I. 1988. "Microdefects in neutron-transmutationaly doped silicon." USSR.
@misc{etde_6663668,
title = {Microdefects in neutron-transmutationaly doped silicon}
author = {Vysotskaya, V V, Gorin, S N, Gres'kov, I M, Sobolev, N A, and Shek, E I}
abstractNote = {Using the method of X-ray topography and high-voltage electron microscopy, the nature of microdefects and character of their changes in neutron-transmutationaly doped silicon depending on the sample prehistory and heat treatment (HT) conditions are refined. It is shown that the microstructure of neutron-transmutationaly doped dislocation-free silicon crystals depends on conditions of ingot growth and post-radiation annealing environment. Annealing in chlorine-containing atmosphere removes microdefects (MD), although in vacuum, argon or air growing MD are preserved and new MD are formed.}
journal = {Izv. Akad. Nauk SSSR, Neorg. Mater.; (USSR)}
volume = {24:3}
journal type = {AC}
place = {USSR}
year = {1988}
month = {Mar}
}