Abstract
Using the method of X-ray topography and high-voltage electron microscopy, the nature of microdefects and character of their changes in neutron-transmutationaly doped silicon depending on the sample prehistory and heat treatment (HT) conditions are refined. It is shown that the microstructure of neutron-transmutationaly doped dislocation-free silicon crystals depends on conditions of ingot growth and post-radiation annealing environment. Annealing in chlorine-containing atmosphere removes microdefects (MD), although in vacuum, argon or air growing MD are preserved and new MD are formed.
Citation Formats
Vysotskaya, V V, Gorin, S N, Gres'kov, I M, Sobolev, N A, and Shek, E I.
Microdefects in neutron-transmutationaly doped silicon.
USSR: N. p.,
1988.
Web.
Vysotskaya, V V, Gorin, S N, Gres'kov, I M, Sobolev, N A, & Shek, E I.
Microdefects in neutron-transmutationaly doped silicon.
USSR.
Vysotskaya, V V, Gorin, S N, Gres'kov, I M, Sobolev, N A, and Shek, E I.
1988.
"Microdefects in neutron-transmutationaly doped silicon."
USSR.
@misc{etde_6663668,
title = {Microdefects in neutron-transmutationaly doped silicon}
author = {Vysotskaya, V V, Gorin, S N, Gres'kov, I M, Sobolev, N A, and Shek, E I}
abstractNote = {Using the method of X-ray topography and high-voltage electron microscopy, the nature of microdefects and character of their changes in neutron-transmutationaly doped silicon depending on the sample prehistory and heat treatment (HT) conditions are refined. It is shown that the microstructure of neutron-transmutationaly doped dislocation-free silicon crystals depends on conditions of ingot growth and post-radiation annealing environment. Annealing in chlorine-containing atmosphere removes microdefects (MD), although in vacuum, argon or air growing MD are preserved and new MD are formed.}
journal = []
volume = {24:3}
journal type = {AC}
place = {USSR}
year = {1988}
month = {Mar}
}
title = {Microdefects in neutron-transmutationaly doped silicon}
author = {Vysotskaya, V V, Gorin, S N, Gres'kov, I M, Sobolev, N A, and Shek, E I}
abstractNote = {Using the method of X-ray topography and high-voltage electron microscopy, the nature of microdefects and character of their changes in neutron-transmutationaly doped silicon depending on the sample prehistory and heat treatment (HT) conditions are refined. It is shown that the microstructure of neutron-transmutationaly doped dislocation-free silicon crystals depends on conditions of ingot growth and post-radiation annealing environment. Annealing in chlorine-containing atmosphere removes microdefects (MD), although in vacuum, argon or air growing MD are preserved and new MD are formed.}
journal = []
volume = {24:3}
journal type = {AC}
place = {USSR}
year = {1988}
month = {Mar}
}