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Operation and radiation resistance of a FOXFET biasing structure for silicon strip detectors

Conference:

Abstract

AC-coupled strip detectors biased with a FOXFET transistor structure have been studied. Measurement results for the basic operational characteristics of the FOXFET are presented together with a brief description of the physics underlying its operation. Radiation effects were studied using photons from a [sup 137]Cs source. Changes in the FOXFET characteristics as a function of radiation dose up to 1 Mrad are reported. Results about the effect of radiation on the noise from a FOXFET biased detector are discribed. (orig.).
Authors:
Laakso, M; [1]  Singh, P; Engels, E Jr; Shepard, J; Shepard, P F [2] 
  1. Particle Detector Group, Fermilab, Batavia, IL (United States) Research Inst. for High Energy Physics (SEFT), Helsinski (Finland)
  2. Dept. of Physics and Astronomy, Univ. Pittsburgh, PA (United States)
Publication Date:
Mar 01, 1993
Product Type:
Conference
Report Number:
CONF-9202140-
Reference Number:
AIX-24-036273; EDB-93-060213
Resource Relation:
Journal Name: Nuclear Instruments and Methods in Physics Research, Section A; (Netherlands); Journal Volume: 326:1/2; Conference: 6. European symposium on semiconductor detectors: new developments on radiation detectors, Milan (Italy), 24-26 Feb 1992
Subject:
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; FIELD EFFECT TRANSISTORS; PHYSICAL RADIATION EFFECTS; POSITION SENSITIVE DETECTORS; SI SEMICONDUCTOR DETECTORS; BACKGROUND NOISE; BETA DETECTION; ELECTRIC CONDUCTIVITY; GAMMA RADIATION; KEV RANGE 100-1000; LEAKAGE CURRENT; PULSES; CHARGED PARTICLE DETECTION; CURRENTS; DETECTION; ELECTRIC CURRENTS; ELECTRICAL PROPERTIES; ELECTROMAGNETIC RADIATION; ENERGY RANGE; IONIZING RADIATIONS; KEV RANGE; MEASURING INSTRUMENTS; NOISE; PHYSICAL PROPERTIES; RADIATION DETECTION; RADIATION DETECTORS; RADIATION EFFECTS; RADIATIONS; SEMICONDUCTOR DETECTORS; SEMICONDUCTOR DEVICES; TRANSISTORS; 440200* - Radiation Effects on Instrument Components, Instruments, or Electronic Systems; 440104 - Radiation Instrumentation- High Energy Physics Instrumentation
OSTI ID:
6660947
Country of Origin:
Netherlands
Language:
English
Other Identifying Numbers:
Journal ID: ISSN 0168-9002; CODEN: NIMAER
Submitting Site:
NLN
Size:
Pages: 214-221
Announcement Date:

Conference:

Citation Formats

Laakso, M, Singh, P, Engels, E Jr, Shepard, J, and Shepard, P F. Operation and radiation resistance of a FOXFET biasing structure for silicon strip detectors. Netherlands: N. p., 1993. Web.
Laakso, M, Singh, P, Engels, E Jr, Shepard, J, & Shepard, P F. Operation and radiation resistance of a FOXFET biasing structure for silicon strip detectors. Netherlands.
Laakso, M, Singh, P, Engels, E Jr, Shepard, J, and Shepard, P F. 1993. "Operation and radiation resistance of a FOXFET biasing structure for silicon strip detectors." Netherlands.
@misc{etde_6660947,
title = {Operation and radiation resistance of a FOXFET biasing structure for silicon strip detectors}
author = {Laakso, M, Singh, P, Engels, E Jr, Shepard, J, and Shepard, P F}
abstractNote = {AC-coupled strip detectors biased with a FOXFET transistor structure have been studied. Measurement results for the basic operational characteristics of the FOXFET are presented together with a brief description of the physics underlying its operation. Radiation effects were studied using photons from a [sup 137]Cs source. Changes in the FOXFET characteristics as a function of radiation dose up to 1 Mrad are reported. Results about the effect of radiation on the noise from a FOXFET biased detector are discribed. (orig.).}
journal = {Nuclear Instruments and Methods in Physics Research, Section A; (Netherlands)}
volume = {326:1/2}
place = {Netherlands}
year = {1993}
month = {Mar}
}