Abstract
Discussions were given on measurements of coefficients for static friction between different types of thin films. A small light-weight mover of a millimeter size was driven electrostatically to measure friction in a condition close to operation of a micromachine. The thin film materials were fabricated using a sol-gel process, sputtering, vacuum deposition and a CVD process. The materials include Ni, Ti, Al, SiO2, SiNx, Si wafers and glasses. The measured values for Ni-Ni, Al-Al and Ni-Al were larger by from 0.1 to 0.2 than values for bulk. The reason for this would be because of the friction generating mechanisms being different and the sample weight being lighter. Measured values for different types of thin films on silicon wafers were higher. This may be because OH groups are formed on the wafer surface causing high adhesiveness. Values for glasses are small in general. Friction coefficients for SiO2 thin films are small on the whole. However, SiO2-SiO2 showed larger values. This indicates that SiO2 is a useful material for micromechatronics, but proper selection of contacting opponents is important. 7 refs., 4 figs., 7 tabs.
Suzuki, M;
Watanabe, S;
Yoshimura, N;
[1]
Fujita, H
[2]
- Akita Univ., Akita (Japan)
- The University of Tokyo, Tokyo (Japan)
Citation Formats
Suzuki, M, Watanabe, S, Yoshimura, N, and Fujita, H.
Measurement of friction coefficient for various thin films using millimeter-size movers driven by electro-static force. Seiden kudogata bisho mover wo mochiita usumaku no masatsu keisoku.
Japan: N. p.,
1992.
Web.
Suzuki, M, Watanabe, S, Yoshimura, N, & Fujita, H.
Measurement of friction coefficient for various thin films using millimeter-size movers driven by electro-static force. Seiden kudogata bisho mover wo mochiita usumaku no masatsu keisoku.
Japan.
Suzuki, M, Watanabe, S, Yoshimura, N, and Fujita, H.
1992.
"Measurement of friction coefficient for various thin films using millimeter-size movers driven by electro-static force. Seiden kudogata bisho mover wo mochiita usumaku no masatsu keisoku."
Japan.
@misc{etde_6598382,
title = {Measurement of friction coefficient for various thin films using millimeter-size movers driven by electro-static force. Seiden kudogata bisho mover wo mochiita usumaku no masatsu keisoku}
author = {Suzuki, M, Watanabe, S, Yoshimura, N, and Fujita, H}
abstractNote = {Discussions were given on measurements of coefficients for static friction between different types of thin films. A small light-weight mover of a millimeter size was driven electrostatically to measure friction in a condition close to operation of a micromachine. The thin film materials were fabricated using a sol-gel process, sputtering, vacuum deposition and a CVD process. The materials include Ni, Ti, Al, SiO2, SiNx, Si wafers and glasses. The measured values for Ni-Ni, Al-Al and Ni-Al were larger by from 0.1 to 0.2 than values for bulk. The reason for this would be because of the friction generating mechanisms being different and the sample weight being lighter. Measured values for different types of thin films on silicon wafers were higher. This may be because OH groups are formed on the wafer surface causing high adhesiveness. Values for glasses are small in general. Friction coefficients for SiO2 thin films are small on the whole. However, SiO2-SiO2 showed larger values. This indicates that SiO2 is a useful material for micromechatronics, but proper selection of contacting opponents is important. 7 refs., 4 figs., 7 tabs.}
journal = []
volume = {112:12}
journal type = {AC}
place = {Japan}
year = {1992}
month = {Dec}
}
title = {Measurement of friction coefficient for various thin films using millimeter-size movers driven by electro-static force. Seiden kudogata bisho mover wo mochiita usumaku no masatsu keisoku}
author = {Suzuki, M, Watanabe, S, Yoshimura, N, and Fujita, H}
abstractNote = {Discussions were given on measurements of coefficients for static friction between different types of thin films. A small light-weight mover of a millimeter size was driven electrostatically to measure friction in a condition close to operation of a micromachine. The thin film materials were fabricated using a sol-gel process, sputtering, vacuum deposition and a CVD process. The materials include Ni, Ti, Al, SiO2, SiNx, Si wafers and glasses. The measured values for Ni-Ni, Al-Al and Ni-Al were larger by from 0.1 to 0.2 than values for bulk. The reason for this would be because of the friction generating mechanisms being different and the sample weight being lighter. Measured values for different types of thin films on silicon wafers were higher. This may be because OH groups are formed on the wafer surface causing high adhesiveness. Values for glasses are small in general. Friction coefficients for SiO2 thin films are small on the whole. However, SiO2-SiO2 showed larger values. This indicates that SiO2 is a useful material for micromechatronics, but proper selection of contacting opponents is important. 7 refs., 4 figs., 7 tabs.}
journal = []
volume = {112:12}
journal type = {AC}
place = {Japan}
year = {1992}
month = {Dec}
}