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Field oxide radiation damage measurements in silicon strip detectors

Abstract

Surface radiation damage in planar processed silicon detectors is caused by radiation generated holes being trapped in the silicon dioxide layers on the detector wafer. We have studied charge trapping in thick (field) oxide layers on detector wafers by irradiating FOXFET biased strip detectors and MOS test capacitors. Special emphasis was put on studying how a negative bias voltage across the oxide during irradiation affects hole trapping. In addition to FOXFET biased detectors, negatively biased field oxide layers may exist on the n-side of double-sided strip detectors with field plate based n-strip separation. The results indicate that charge trapping occurred both close to the Si-SiO[sub 2] interface and in the bulk of the oxide. The charge trapped in the bulk was found to modify the electric field in the oxide in a way that leads to saturation in the amount of charge trapped in the bulk when the flatband/threshold voltage shift equals the voltage applied over the oxide during irradiation. After irradiation only charge trapped close to the interface is annealed by electrons tunneling to the oxide from the n-type bulk. (orig.).
Authors:
Laakso, M; [1]  Singh, P; Shepard, P F [2] 
  1. Particle Detector Group, Fermilab, Batavia, IL (United States) Research Inst. for High Energy Physics (SEFT), Helsinki (Finland)
  2. Dept. of Physics and Astronomy, Univ. Pittsburgh, PA (United States)
Publication Date:
Apr 01, 1993
Product Type:
Journal Article
Reference Number:
AIX-24-042841; EDB-93-070853
Resource Relation:
Journal Name: Nuclear Instruments and Methods in Physics Research, Section A; (Netherlands); Journal Volume: 327:2/3
Subject:
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; POSITION SENSITIVE DETECTORS; SI SEMICONDUCTOR DETECTORS; PHYSICAL RADIATION EFFECTS; CAPACITORS; ELECTRIC FIELDS; ELECTRONIC STRUCTURE; LEAKAGE CURRENT; N-TYPE CONDUCTORS; SILICON; SILICON OXIDES; TRAPPING; TUNNEL EFFECT; CHALCOGENIDES; CURRENTS; ELECTRIC CURRENTS; ELECTRICAL EQUIPMENT; ELEMENTS; EQUIPMENT; MATERIALS; MEASURING INSTRUMENTS; OXIDES; OXYGEN COMPOUNDS; RADIATION DETECTORS; RADIATION EFFECTS; SEMICONDUCTOR DETECTORS; SEMICONDUCTOR MATERIALS; SEMIMETALS; SILICON COMPOUNDS; 440104* - Radiation Instrumentation- High Energy Physics Instrumentation
OSTI ID:
6561641
Country of Origin:
Netherlands
Language:
English
Other Identifying Numbers:
Journal ID: ISSN 0168-9002; CODEN: NIMAER
Submitting Site:
NLN
Size:
Pages: 517-522
Announcement Date:

Citation Formats

Laakso, M, Singh, P, and Shepard, P F. Field oxide radiation damage measurements in silicon strip detectors. Netherlands: N. p., 1993. Web. doi:10.1016/0168-9002(93)90718-W.
Laakso, M, Singh, P, & Shepard, P F. Field oxide radiation damage measurements in silicon strip detectors. Netherlands. doi:10.1016/0168-9002(93)90718-W.
Laakso, M, Singh, P, and Shepard, P F. 1993. "Field oxide radiation damage measurements in silicon strip detectors." Netherlands. doi:10.1016/0168-9002(93)90718-W. https://www.osti.gov/servlets/purl/10.1016/0168-9002(93)90718-W.
@misc{etde_6561641,
title = {Field oxide radiation damage measurements in silicon strip detectors}
author = {Laakso, M, Singh, P, and Shepard, P F}
abstractNote = {Surface radiation damage in planar processed silicon detectors is caused by radiation generated holes being trapped in the silicon dioxide layers on the detector wafer. We have studied charge trapping in thick (field) oxide layers on detector wafers by irradiating FOXFET biased strip detectors and MOS test capacitors. Special emphasis was put on studying how a negative bias voltage across the oxide during irradiation affects hole trapping. In addition to FOXFET biased detectors, negatively biased field oxide layers may exist on the n-side of double-sided strip detectors with field plate based n-strip separation. The results indicate that charge trapping occurred both close to the Si-SiO[sub 2] interface and in the bulk of the oxide. The charge trapped in the bulk was found to modify the electric field in the oxide in a way that leads to saturation in the amount of charge trapped in the bulk when the flatband/threshold voltage shift equals the voltage applied over the oxide during irradiation. After irradiation only charge trapped close to the interface is annealed by electrons tunneling to the oxide from the n-type bulk. (orig.).}
doi = {10.1016/0168-9002(93)90718-W}
journal = {Nuclear Instruments and Methods in Physics Research, Section A; (Netherlands)}
volume = {327:2/3}
journal type = {AC}
place = {Netherlands}
year = {1993}
month = {Apr}
}