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Physical basis of power conversion of energy fluctuations of hot electrons

Abstract

The design of an experimental reversible-energy-fluctuation (REF) solar converter using hot nonequilibrated (HNE) electrons is presented. The physical principles are introduced, and an idealized model is described and analyzed in terms of radiation and electron-thermalization losses and first-to-third-layer transfer times. It is shown that the 93-percent limiting conversion efficiency can be approached in both a two-level and an N-level model, even in larger-scale circuits. On the other hand, as circuit size is decreased below 100 nm, the maximum power output can exceed 10 MW/sq m. The materials and thicknesses to be used in an experimental thin-film version of the REF device are outlined, including a 10-60-nm-thick Cd3As2 or alpha-Sn absorbing layer, a 4-10-nm-thick doped-semiconductor or semimetal quantum-well layer, and a Schottky-barrier diode layer comprising a 4-10-nm-thick Pb sheet on a 5-20-nm-thick p-GaAs film. Experiments at lattice temperatures of from 300 to 1 K with input radiation at wavelengths from 1 micron to the solar spectrum and intensities from zero to 1 mW are planned to determine whether the predicted practical efficiency of 80 percent can be obtained. 19 references.
Authors:
Publication Date:
Dec 01, 1983
Product Type:
Journal Article
Reference Number:
EDB-84-164877
Resource Relation:
Journal Name: Sol. Cells; (Switzerland); Journal Volume: 10
Subject:
14 SOLAR ENERGY; THERMOELECTRIC CONVERSION; DESIGN; LOSSES; SEMICONDUCTOR MATERIALS; SOLAR ENERGY CONVERSION; THIN FILMS; CONVERSION; DIRECT ENERGY CONVERSION; ENERGY CONVERSION; FILMS; MATERIALS; 140502* - Solar Energy Conversion- Thermonic & Thermoelectric conversion
OSTI ID:
6509189
Country of Origin:
Switzerland
Language:
English
Other Identifying Numbers:
Journal ID: CODEN: SOCLD
Submitting Site:
HEDB
Size:
Pages: 237-255
Announcement Date:

Citation Formats

Yater, J C. Physical basis of power conversion of energy fluctuations of hot electrons. Switzerland: N. p., 1983. Web. doi:10.1016/0379-6787(83)90054-6.
Yater, J C. Physical basis of power conversion of energy fluctuations of hot electrons. Switzerland. doi:10.1016/0379-6787(83)90054-6.
Yater, J C. 1983. "Physical basis of power conversion of energy fluctuations of hot electrons." Switzerland. doi:10.1016/0379-6787(83)90054-6. https://www.osti.gov/servlets/purl/10.1016/0379-6787(83)90054-6.
@misc{etde_6509189,
title = {Physical basis of power conversion of energy fluctuations of hot electrons}
author = {Yater, J C}
abstractNote = {The design of an experimental reversible-energy-fluctuation (REF) solar converter using hot nonequilibrated (HNE) electrons is presented. The physical principles are introduced, and an idealized model is described and analyzed in terms of radiation and electron-thermalization losses and first-to-third-layer transfer times. It is shown that the 93-percent limiting conversion efficiency can be approached in both a two-level and an N-level model, even in larger-scale circuits. On the other hand, as circuit size is decreased below 100 nm, the maximum power output can exceed 10 MW/sq m. The materials and thicknesses to be used in an experimental thin-film version of the REF device are outlined, including a 10-60-nm-thick Cd3As2 or alpha-Sn absorbing layer, a 4-10-nm-thick doped-semiconductor or semimetal quantum-well layer, and a Schottky-barrier diode layer comprising a 4-10-nm-thick Pb sheet on a 5-20-nm-thick p-GaAs film. Experiments at lattice temperatures of from 300 to 1 K with input radiation at wavelengths from 1 micron to the solar spectrum and intensities from zero to 1 mW are planned to determine whether the predicted practical efficiency of 80 percent can be obtained. 19 references.}
doi = {10.1016/0379-6787(83)90054-6}
journal = {Sol. Cells; (Switzerland)}
volume = {10}
journal type = {AC}
place = {Switzerland}
year = {1983}
month = {Dec}
}