The design of an experimental reversible-energy-fluctuation (REF) solar converter using hot nonequilibrated (HNE) electrons is presented. The physical principles are introduced, and an idealized model is described and analyzed in terms of radiation and electron-thermalization losses and first-to-third-layer transfer times. It is shown that the 93-percent limiting conversion efficiency can be approached in both a two-level and an N-level model, even in larger-scale circuits. On the other hand, as circuit size is decreased below 100 nm, the maximum power output can exceed 10 MW/sq m. The materials and thicknesses to be used in an experimental thin-film version of the REF device are outlined, including a 10-60-nm-thick Cd3As2 or alpha-Sn absorbing layer, a 4-10-nm-thick doped-semiconductor or semimetal quantum-well layer, and a Schottky-barrier diode layer comprising a 4-10-nm-thick Pb sheet on a 5-20-nm-thick p-GaAs film. Experiments at lattice temperatures of from 300 to 1 K with input radiation at wavelengths from 1 micron to the solar spectrum and intensities from zero to 1 mW are planned to determine whether the predicted practical efficiency of 80 percent can be obtained. 19 references.