Abstract
This report describes an outline on the results of investigation on the formation of ZrO2 films from [beta]-diketone chelate of Zr using H2/CO2 as oxidizing gas by application of the CVD method at a temperature as high as 1000[degree]C. The deposition rate is 4[mu]m/h at 650[degree]C, increases with rise of temperature and reaches 10[mu]m/h at 900-1000[degree]C. No lowering of the rate at high temperature seems to be caused by temperature dependence of water (increase of water concentration above 850[degree]C). The physical form of ZrO2 is black and amorphous at 650[degree]C; grey and tetragonal at 850[degree]C; white, monoclinic and tetragonal at 950-1000[degree]C. All of these films showed a fine-grain, polycrystalline structure at any temperature and became white by heat-treatment at 1100[degree]C for 100h. This treatment gave no change to amorphous films but transformed tetragonal films and the mixture films of tetragonal and monoclinic crystals into white monoclinic Zr films. This may be because oxygen defects were present in black and grey films of low deposition temperature due to insufficient oxydation of raw material by H2O. Instability of tetragonal crystals seems to be attributed to participation of oxygen defects. In conclusion, possibility of high-temperature film formation was confirmed. 17 refs., 4 figs.
Aizawa, M;
Kobayashi, C;
[1]
Yamane, H;
Hirai, T
[2]
- Toto Ltd., Kitakyushu (Japan)
- Tohoku University, Sendai (Japan). Institute for Materials Research
Citation Formats
Aizawa, M, Kobayashi, C, Yamane, H, and Hirai, T.
Preparation of ZrO2 thin films by CVD using H2-CO2 as oxidizer. H2-CO2 wo sanka gas ni mochiita CVD ho ni yoru ZrO2 maku no sakusei.
Japan: N. p.,
1993.
Web.
Aizawa, M, Kobayashi, C, Yamane, H, & Hirai, T.
Preparation of ZrO2 thin films by CVD using H2-CO2 as oxidizer. H2-CO2 wo sanka gas ni mochiita CVD ho ni yoru ZrO2 maku no sakusei.
Japan.
Aizawa, M, Kobayashi, C, Yamane, H, and Hirai, T.
1993.
"Preparation of ZrO2 thin films by CVD using H2-CO2 as oxidizer. H2-CO2 wo sanka gas ni mochiita CVD ho ni yoru ZrO2 maku no sakusei."
Japan.
@misc{etde_6490363,
title = {Preparation of ZrO2 thin films by CVD using H2-CO2 as oxidizer. H2-CO2 wo sanka gas ni mochiita CVD ho ni yoru ZrO2 maku no sakusei}
author = {Aizawa, M, Kobayashi, C, Yamane, H, and Hirai, T}
abstractNote = {This report describes an outline on the results of investigation on the formation of ZrO2 films from [beta]-diketone chelate of Zr using H2/CO2 as oxidizing gas by application of the CVD method at a temperature as high as 1000[degree]C. The deposition rate is 4[mu]m/h at 650[degree]C, increases with rise of temperature and reaches 10[mu]m/h at 900-1000[degree]C. No lowering of the rate at high temperature seems to be caused by temperature dependence of water (increase of water concentration above 850[degree]C). The physical form of ZrO2 is black and amorphous at 650[degree]C; grey and tetragonal at 850[degree]C; white, monoclinic and tetragonal at 950-1000[degree]C. All of these films showed a fine-grain, polycrystalline structure at any temperature and became white by heat-treatment at 1100[degree]C for 100h. This treatment gave no change to amorphous films but transformed tetragonal films and the mixture films of tetragonal and monoclinic crystals into white monoclinic Zr films. This may be because oxygen defects were present in black and grey films of low deposition temperature due to insufficient oxydation of raw material by H2O. Instability of tetragonal crystals seems to be attributed to participation of oxygen defects. In conclusion, possibility of high-temperature film formation was confirmed. 17 refs., 4 figs.}
journal = []
volume = {101:1170}
journal type = {AC}
place = {Japan}
year = {1993}
month = {Feb}
}
title = {Preparation of ZrO2 thin films by CVD using H2-CO2 as oxidizer. H2-CO2 wo sanka gas ni mochiita CVD ho ni yoru ZrO2 maku no sakusei}
author = {Aizawa, M, Kobayashi, C, Yamane, H, and Hirai, T}
abstractNote = {This report describes an outline on the results of investigation on the formation of ZrO2 films from [beta]-diketone chelate of Zr using H2/CO2 as oxidizing gas by application of the CVD method at a temperature as high as 1000[degree]C. The deposition rate is 4[mu]m/h at 650[degree]C, increases with rise of temperature and reaches 10[mu]m/h at 900-1000[degree]C. No lowering of the rate at high temperature seems to be caused by temperature dependence of water (increase of water concentration above 850[degree]C). The physical form of ZrO2 is black and amorphous at 650[degree]C; grey and tetragonal at 850[degree]C; white, monoclinic and tetragonal at 950-1000[degree]C. All of these films showed a fine-grain, polycrystalline structure at any temperature and became white by heat-treatment at 1100[degree]C for 100h. This treatment gave no change to amorphous films but transformed tetragonal films and the mixture films of tetragonal and monoclinic crystals into white monoclinic Zr films. This may be because oxygen defects were present in black and grey films of low deposition temperature due to insufficient oxydation of raw material by H2O. Instability of tetragonal crystals seems to be attributed to participation of oxygen defects. In conclusion, possibility of high-temperature film formation was confirmed. 17 refs., 4 figs.}
journal = []
volume = {101:1170}
journal type = {AC}
place = {Japan}
year = {1993}
month = {Feb}
}