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Excited states of hydrogen shallow impurities in GaAs-Ga Al As quantum wells; Estados excitados de impurezas hidrogenoides rasas em pocos quanticos de GaAs-GaAlAs

Abstract

The study of shallow impurities in semiconductor heterostructures, such as quantum and superlattices, has been of continuous interest over the last years. Successful comparisons between experimental results photoluminescence: N.N Ledentsov et al., Appl. Phys. A 54, 261 (1992) and theoretical calculations [L.E. Oliveira and G.D. Mahan, Phys. Rev. B 47, 2406 (1993)] constitute a strong motivation for an in-depth theoretical study. We present a variational calculation of the binding energies of shallow donors in a Ga-As-AlGaAs quantum well. The energies and variational wave functions associated to the ground state (1s-like) as well as some excited states (2s, 2p{sub xy}, 2p{sub xy}, 3s, 3p{sub xy}, and 3p like) are obtained as functions of the position of the impurity (z{sub i}) in the well. The density of impurity states, intra-donor transition strengths and the infrared absorption spectra are calculated for some of these excited states and results compared with previous theoretical [S. Fraizzoli, F. Bassani, and R. Buczko, Phys. rev. B 41, 5096 (1990)] and experimental works [N.C. Jarosik et al., Phys. Rev. Lett. 54, 1283 (1985)]. (author) 53 refs., 16 figs., 1 tab.
Publication Date:
Dec 31, 1994
Product Type:
Thesis/Dissertation
Report Number:
INIS-BR-3615
Reference Number:
SCA: 665430; PA: AIX-29:045571; EDB-98:097573; SN: 98001997377
Resource Relation:
Other Information: DN: 53 refs., 16 figs., 1 tab.; TH: Tese (M.Sc.); PBD: 1994
Subject:
66 PHYSICS; CRYSTAL GROWTH METHODS; CRYSTAL STRUCTURE; CRYSTALLOGRAPHY; CRYSTALS; GALLIUM; GALLIUM ARSENIDES; IMPURITIES; MOLECULAR BEAM EPITAXY; STRUCTURAL CHEMICAL ANALYSIS
OSTI ID:
642524
Research Organizations:
Universidade Estadual de Campinas, SP (Brazil). Inst. de Fisica
Country of Origin:
Brazil
Language:
Portuguese
Other Identifying Numbers:
Other: ON: DE98633154; TRN: BR98B0264045571
Availability:
INIS; OSTI as DE98633154
Submitting Site:
BRN
Size:
53 p.
Announcement Date:

Citation Formats

Neves Carneiro, Gleise das. Excited states of hydrogen shallow impurities in GaAs-Ga Al As quantum wells; Estados excitados de impurezas hidrogenoides rasas em pocos quanticos de GaAs-GaAlAs. Brazil: N. p., 1994. Web.
Neves Carneiro, Gleise das. Excited states of hydrogen shallow impurities in GaAs-Ga Al As quantum wells; Estados excitados de impurezas hidrogenoides rasas em pocos quanticos de GaAs-GaAlAs. Brazil.
Neves Carneiro, Gleise das. 1994. "Excited states of hydrogen shallow impurities in GaAs-Ga Al As quantum wells; Estados excitados de impurezas hidrogenoides rasas em pocos quanticos de GaAs-GaAlAs." Brazil.
@misc{etde_642524,
title = {Excited states of hydrogen shallow impurities in GaAs-Ga Al As quantum wells; Estados excitados de impurezas hidrogenoides rasas em pocos quanticos de GaAs-GaAlAs}
author = {Neves Carneiro, Gleise das}
abstractNote = {The study of shallow impurities in semiconductor heterostructures, such as quantum and superlattices, has been of continuous interest over the last years. Successful comparisons between experimental results photoluminescence: N.N Ledentsov et al., Appl. Phys. A 54, 261 (1992) and theoretical calculations [L.E. Oliveira and G.D. Mahan, Phys. Rev. B 47, 2406 (1993)] constitute a strong motivation for an in-depth theoretical study. We present a variational calculation of the binding energies of shallow donors in a Ga-As-AlGaAs quantum well. The energies and variational wave functions associated to the ground state (1s-like) as well as some excited states (2s, 2p{sub xy}, 2p{sub xy}, 3s, 3p{sub xy}, and 3p like) are obtained as functions of the position of the impurity (z{sub i}) in the well. The density of impurity states, intra-donor transition strengths and the infrared absorption spectra are calculated for some of these excited states and results compared with previous theoretical [S. Fraizzoli, F. Bassani, and R. Buczko, Phys. rev. B 41, 5096 (1990)] and experimental works [N.C. Jarosik et al., Phys. Rev. Lett. 54, 1283 (1985)]. (author) 53 refs., 16 figs., 1 tab.}
place = {Brazil}
year = {1994}
month = {Dec}
}