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Ion implantation in semiconductors

Abstract

The historical development of the method of ion implantation, the physical research of the method, its technological solution and practical uses is described. The method is universally applicable, allows the implantation of arbitrary atoms to an arbitrary material and ensures high purity of the doping element. It is linked with sample processing at low temperatures. In implantation it is possible to independently change the dose and energy of the ions thereby affecting the spatial distribution of the ions.
Publication Date:
Jun 01, 1980
Product Type:
Journal Article
Reference Number:
AIX-12-586691; EDB-81-105338
Resource Relation:
Journal Name: Veda Tech. SSSR; (Czechoslovakia); Journal Volume: 8:3
Subject:
36 MATERIALS SCIENCE; SEMICONDUCTOR MATERIALS; ION IMPLANTATION; CRYSTAL DOPING; ION CHANNELING; P-N JUNCTIONS; CHANNELING; JUNCTIONS; MATERIALS; SEMICONDUCTOR JUNCTIONS; 360601* - Other Materials- Preparation & Manufacture
OSTI ID:
6303353
Country of Origin:
Serbia and Montenegro
Language:
Czech
Other Identifying Numbers:
Journal ID: CODEN: VDTCA
Submitting Site:
INIS
Size:
Pages: 157-164
Announcement Date:
Mar 01, 1981

Citation Formats

Gusev, V, and Gusevova, M. Ion implantation in semiconductors. Serbia and Montenegro: N. p., 1980. Web.
Gusev, V, & Gusevova, M. Ion implantation in semiconductors. Serbia and Montenegro.
Gusev, V, and Gusevova, M. 1980. "Ion implantation in semiconductors." Serbia and Montenegro.
@misc{etde_6303353,
title = {Ion implantation in semiconductors}
author = {Gusev, V, and Gusevova, M}
abstractNote = {The historical development of the method of ion implantation, the physical research of the method, its technological solution and practical uses is described. The method is universally applicable, allows the implantation of arbitrary atoms to an arbitrary material and ensures high purity of the doping element. It is linked with sample processing at low temperatures. In implantation it is possible to independently change the dose and energy of the ions thereby affecting the spatial distribution of the ions.}
journal = []
volume = {8:3}
journal type = {AC}
place = {Serbia and Montenegro}
year = {1980}
month = {Jun}
}