Abstract
The historical development of the method of ion implantation, the physical research of the method, its technological solution and practical uses is described. The method is universally applicable, allows the implantation of arbitrary atoms to an arbitrary material and ensures high purity of the doping element. It is linked with sample processing at low temperatures. In implantation it is possible to independently change the dose and energy of the ions thereby affecting the spatial distribution of the ions.
Citation Formats
Gusev, V, and Gusevova, M.
Ion implantation in semiconductors.
Serbia and Montenegro: N. p.,
1980.
Web.
Gusev, V, & Gusevova, M.
Ion implantation in semiconductors.
Serbia and Montenegro.
Gusev, V, and Gusevova, M.
1980.
"Ion implantation in semiconductors."
Serbia and Montenegro.
@misc{etde_6303353,
title = {Ion implantation in semiconductors}
author = {Gusev, V, and Gusevova, M}
abstractNote = {The historical development of the method of ion implantation, the physical research of the method, its technological solution and practical uses is described. The method is universally applicable, allows the implantation of arbitrary atoms to an arbitrary material and ensures high purity of the doping element. It is linked with sample processing at low temperatures. In implantation it is possible to independently change the dose and energy of the ions thereby affecting the spatial distribution of the ions.}
journal = []
volume = {8:3}
journal type = {AC}
place = {Serbia and Montenegro}
year = {1980}
month = {Jun}
}
title = {Ion implantation in semiconductors}
author = {Gusev, V, and Gusevova, M}
abstractNote = {The historical development of the method of ion implantation, the physical research of the method, its technological solution and practical uses is described. The method is universally applicable, allows the implantation of arbitrary atoms to an arbitrary material and ensures high purity of the doping element. It is linked with sample processing at low temperatures. In implantation it is possible to independently change the dose and energy of the ions thereby affecting the spatial distribution of the ions.}
journal = []
volume = {8:3}
journal type = {AC}
place = {Serbia and Montenegro}
year = {1980}
month = {Jun}
}