Abstract
Auger electron spectroscopy with the ion sputter-etching technique and secondary ion mass spectroscopy have been utilized to investigate the depth distribution of Sn and In electrode elements in amorphous silicon layers of the photovoltaic device. The comparison of the depth profiles with the cell performances has indicated that the presence of the reduced state of In in both the p and i-layers affects the solar cell performance, but that of Sn does not. It was also shown that layered structure of In-Sn oxide (ITO)/SnO2 effectively prevents the diffusion of In and achieves high cell performances, having the thickness of the SnO2 layer about 200 A. 8 references.
Citation Formats
Imura, T, Hiraki, A, and Okamoto, H.
Distribution of electrode elements near contacts and junction layers in amorphous silicon solar cell.
Japan: N. p.,
1982.
Web.
Imura, T, Hiraki, A, & Okamoto, H.
Distribution of electrode elements near contacts and junction layers in amorphous silicon solar cell.
Japan.
Imura, T, Hiraki, A, and Okamoto, H.
1982.
"Distribution of electrode elements near contacts and junction layers in amorphous silicon solar cell."
Japan.
@misc{etde_6284355,
title = {Distribution of electrode elements near contacts and junction layers in amorphous silicon solar cell}
author = {Imura, T, Hiraki, A, and Okamoto, H}
abstractNote = {Auger electron spectroscopy with the ion sputter-etching technique and secondary ion mass spectroscopy have been utilized to investigate the depth distribution of Sn and In electrode elements in amorphous silicon layers of the photovoltaic device. The comparison of the depth profiles with the cell performances has indicated that the presence of the reduced state of In in both the p and i-layers affects the solar cell performance, but that of Sn does not. It was also shown that layered structure of In-Sn oxide (ITO)/SnO2 effectively prevents the diffusion of In and achieves high cell performances, having the thickness of the SnO2 layer about 200 A. 8 references.}
journal = []
volume = {21}
place = {Japan}
year = {1982}
month = {Jan}
}
title = {Distribution of electrode elements near contacts and junction layers in amorphous silicon solar cell}
author = {Imura, T, Hiraki, A, and Okamoto, H}
abstractNote = {Auger electron spectroscopy with the ion sputter-etching technique and secondary ion mass spectroscopy have been utilized to investigate the depth distribution of Sn and In electrode elements in amorphous silicon layers of the photovoltaic device. The comparison of the depth profiles with the cell performances has indicated that the presence of the reduced state of In in both the p and i-layers affects the solar cell performance, but that of Sn does not. It was also shown that layered structure of In-Sn oxide (ITO)/SnO2 effectively prevents the diffusion of In and achieves high cell performances, having the thickness of the SnO2 layer about 200 A. 8 references.}
journal = []
volume = {21}
place = {Japan}
year = {1982}
month = {Jan}
}