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Distribution of electrode elements near contacts and junction layers in amorphous silicon solar cell

Abstract

Auger electron spectroscopy with the ion sputter-etching technique and secondary ion mass spectroscopy have been utilized to investigate the depth distribution of Sn and In electrode elements in amorphous silicon layers of the photovoltaic device. The comparison of the depth profiles with the cell performances has indicated that the presence of the reduced state of In in both the p and i-layers affects the solar cell performance, but that of Sn does not. It was also shown that layered structure of In-Sn oxide (ITO)/SnO2 effectively prevents the diffusion of In and achieves high cell performances, having the thickness of the SnO2 layer about 200 A. 8 references.
Publication Date:
Jan 01, 1982
Product Type:
Conference
Report Number:
CONF-8205239-
Reference Number:
EDB-85-011497
Resource Relation:
Journal Name: Jpn. J. Appl. Phys.; (Japan); Journal Volume: 21; Conference: Photovoltaic science and engineering conference, Kyoto, Japan, 19 May 1982
Subject:
14 SOLAR ENERGY; SILICON SOLAR CELLS; ELECTRODES; AMORPHOUS STATE; AUGER ELECTRON SPECTROSCOPY; EFFICIENCY; ELECTRIC CONTACTS; INDIUM COMPOUNDS; P-N JUNCTIONS; PERFORMANCE; SPUTTERING; TIN OXIDES; CHALCOGENIDES; DIRECT ENERGY CONVERTERS; ELECTRICAL EQUIPMENT; ELECTRON SPECTROSCOPY; EQUIPMENT; JUNCTIONS; OXIDES; OXYGEN COMPOUNDS; PHOTOELECTRIC CELLS; PHOTOVOLTAIC CELLS; SEMICONDUCTOR JUNCTIONS; SOLAR CELLS; SOLAR EQUIPMENT; SPECTROSCOPY; TIN COMPOUNDS; 140501* - Solar Energy Conversion- Photovoltaic Conversion
OSTI ID:
6284355
Research Organizations:
Osaka Univ., Suita, Japan
Country of Origin:
Japan
Language:
English
Other Identifying Numbers:
Journal ID: CODEN: JJAPA
Submitting Site:
HEDB
Size:
Pages: 271-275
Announcement Date:
Nov 01, 1984

Citation Formats

Imura, T, Hiraki, A, and Okamoto, H. Distribution of electrode elements near contacts and junction layers in amorphous silicon solar cell. Japan: N. p., 1982. Web.
Imura, T, Hiraki, A, & Okamoto, H. Distribution of electrode elements near contacts and junction layers in amorphous silicon solar cell. Japan.
Imura, T, Hiraki, A, and Okamoto, H. 1982. "Distribution of electrode elements near contacts and junction layers in amorphous silicon solar cell." Japan.
@misc{etde_6284355,
title = {Distribution of electrode elements near contacts and junction layers in amorphous silicon solar cell}
author = {Imura, T, Hiraki, A, and Okamoto, H}
abstractNote = {Auger electron spectroscopy with the ion sputter-etching technique and secondary ion mass spectroscopy have been utilized to investigate the depth distribution of Sn and In electrode elements in amorphous silicon layers of the photovoltaic device. The comparison of the depth profiles with the cell performances has indicated that the presence of the reduced state of In in both the p and i-layers affects the solar cell performance, but that of Sn does not. It was also shown that layered structure of In-Sn oxide (ITO)/SnO2 effectively prevents the diffusion of In and achieves high cell performances, having the thickness of the SnO2 layer about 200 A. 8 references.}
journal = []
volume = {21}
place = {Japan}
year = {1982}
month = {Jan}
}