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Study of the semiconductor properties by irradiation, 8. Study of trapping center by. gamma. -ray on Si wafer

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Abstract

In order to know the effects of ..gamma..-ray irradiation on n-type Si-wafers, the author did ..gamma..-ray irradiation experiments on n-type Si-wafers. They then observed the trapping center by using DLTS and ICTS equipments. The trapping center level, which is produced by ..gamma..-ray, is about 0.49 eV. In addition, the authors discuss the recombination rate.
Authors:
Nakamura, Koji; Shioya, Hitoshi; Nagamatsu, Yasuhiko; Ogura, Shoji [1] 
  1. Miyazaki Univ. (Japan). Faculty of Engineering
Publication Date:
Aug 01, 1983
Product Type:
Journal Article
Reference Number:
AIX-15-070505; EDB-85-024457
Resource Relation:
Journal Name: Miyazaki Daigaku Kogakubu Kenkyu Hokoku; (Japan); Journal Volume: 29
Subject:
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; 36 MATERIALS SCIENCE; S; ELECTRON CAPTURE; ENERGY LEVELS; IMPURITIES; PHOTON BEAMS; RECOMBINATION; SEMICONDUCTOR MATERIALS; SILICON; TRAPPING; BEAMS; CAPTURE; ELEMENTS; MATERIALS; MEMORY DEVICES; RADIATION EFFECTS; SEMICONDUCTOR DEVICES; SEMIMETALS; 440200* - Radiation Effects on Instrument Components, Instruments, or Electronic Systems; 360605 - Materials- Radiation Effects
OSTI ID:
6150896
Country of Origin:
Japan
Language:
Japanese
Other Identifying Numbers:
Journal ID: CODEN: MDKHA
Submitting Site:
HEDB
Size:
Pages: 133-137
Announcement Date:
Nov 01, 1984

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Citation Formats

Nakamura, Koji, Shioya, Hitoshi, Nagamatsu, Yasuhiko, and Ogura, Shoji. Study of the semiconductor properties by irradiation, 8. Study of trapping center by. gamma. -ray on Si wafer. Japan: N. p., 1983. Web.
Nakamura, Koji, Shioya, Hitoshi, Nagamatsu, Yasuhiko, & Ogura, Shoji. Study of the semiconductor properties by irradiation, 8. Study of trapping center by. gamma. -ray on Si wafer. Japan.
Nakamura, Koji, Shioya, Hitoshi, Nagamatsu, Yasuhiko, and Ogura, Shoji. 1983. "Study of the semiconductor properties by irradiation, 8. Study of trapping center by. gamma. -ray on Si wafer." Japan.
@misc{etde_6150896,
title = {Study of the semiconductor properties by irradiation, 8. Study of trapping center by. gamma. -ray on Si wafer}
 author = {Nakamura, Koji, Shioya, Hitoshi, Nagamatsu, Yasuhiko, and Ogura, Shoji}
 abstractNote = {In order to know the effects of ..gamma..-ray irradiation on n-type Si-wafers, the author did ..gamma..-ray irradiation experiments on n-type Si-wafers. They then observed the trapping center by using DLTS and ICTS equipments. The trapping center level, which is produced by ..gamma..-ray, is about 0.49 eV. In addition, the authors discuss the recombination rate.}
 journal = []
 volume = {29}
 journal type = {AC}
 place = {Japan}
 year = {1983}
 month = {Aug}
 }