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Photoeffect on the p-n silicon junction under conditions of interband heating of carriers by light

Journal Article:

Abstract

Photoeffect on the p-n silicon junction conditioned by interband heating of carriers by the CO/sub 2/-laser light has been studied experimentally at room temperature and under nonstationary conditions. Photoelectromotive force (p.e.m.f.) with the sign opposite to the value p.e.m.f. appears in the case of direct displacement of p-n structures. The p.e.m.f. value increases with the increase of direct desplacement. Photoelectrons are shown to make the main contribution into the mechanism of p.e.m.f. formation. Lateral p.e.m.f. connected with spreading currents in the direction parallel to the surface of the p-n junction appears in the p-n structure base. It has been found out that structures with highly alloyed emitter at reverse displacement operates under standard photodiod conditions, that is due to the semiconductor lattice heating by CO/sub 2/-laser irradiation.
Authors:
Andrianov, A V; Valov, P M; Sukhanov, V L; Tuchkevich, V V; Shmidt, N M [1] 
  1. AN SSSR, Leningrad. Fiziko-Tekhnicheskij Inst.
Publication Date:
May 01, 1980
Product Type:
Journal Article
Reference Number:
AIX-12-574329; EDB-82-013236
Resource Relation:
Journal Name: Fiz. Tekh. Poluprovodn. (Leningrad); (USSR); Journal Volume: 14:5
Subject:
36 MATERIALS SCIENCE; SEMICONDUCTOR JUNCTIONS; PHOTOELECTRIC EFFECT; SILICON; ELECTRIC CURRENTS; HEATING; INFRARED RADIATION; LASER RADIATION; MEDIUM TEMPERATURE; PHOTOCONDUCTIVITY; SPACE CHARGE; CURRENTS; ELECTRIC CONDUCTIVITY; ELECTRICAL PROPERTIES; ELECTROMAGNETIC RADIATION; ELEMENTS; JUNCTIONS; PHOTOELECTROMAGNETIC EFFECTS; PHYSICAL PROPERTIES; RADIATIONS; SEMIMETALS; 360603* - Materials- Properties
OSTI ID:
6024208
Country of Origin:
USSR
Language:
Russian
Other Identifying Numbers:
Journal ID: CODEN: FTPPA
Submitting Site:
INIS
Size:
Pages: 859-864
Announcement Date:

Journal Article:

Citation Formats

Andrianov, A V, Valov, P M, Sukhanov, V L, Tuchkevich, V V, and Shmidt, N M. Photoeffect on the p-n silicon junction under conditions of interband heating of carriers by light. USSR: N. p., 1980. Web.
Andrianov, A V, Valov, P M, Sukhanov, V L, Tuchkevich, V V, & Shmidt, N M. Photoeffect on the p-n silicon junction under conditions of interband heating of carriers by light. USSR.
Andrianov, A V, Valov, P M, Sukhanov, V L, Tuchkevich, V V, and Shmidt, N M. 1980. "Photoeffect on the p-n silicon junction under conditions of interband heating of carriers by light." USSR.
@misc{etde_6024208,
title = {Photoeffect on the p-n silicon junction under conditions of interband heating of carriers by light}
author = {Andrianov, A V, Valov, P M, Sukhanov, V L, Tuchkevich, V V, and Shmidt, N M}
abstractNote = {Photoeffect on the p-n silicon junction conditioned by interband heating of carriers by the CO/sub 2/-laser light has been studied experimentally at room temperature and under nonstationary conditions. Photoelectromotive force (p.e.m.f.) with the sign opposite to the value p.e.m.f. appears in the case of direct displacement of p-n structures. The p.e.m.f. value increases with the increase of direct desplacement. Photoelectrons are shown to make the main contribution into the mechanism of p.e.m.f. formation. Lateral p.e.m.f. connected with spreading currents in the direction parallel to the surface of the p-n junction appears in the p-n structure base. It has been found out that structures with highly alloyed emitter at reverse displacement operates under standard photodiod conditions, that is due to the semiconductor lattice heating by CO/sub 2/-laser irradiation.}
journal = {Fiz. Tekh. Poluprovodn. (Leningrad); (USSR)}
volume = {14:5}
journal type = {AC}
place = {USSR}
year = {1980}
month = {May}
}