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Hard electronics; Hard electronics

Abstract

Hard material technologies were surveyed to establish the hard electronic technology which offers superior characteristics under hard operational or environmental conditions as compared with conventional Si devices. The following technologies were separately surveyed: (1) The device and integration technologies of wide gap hard semiconductors such as SiC, diamond and nitride, (2) The technology of hard semiconductor devices for vacuum micro- electronics technology, and (3) The technology of hard new material devices for oxides. The formation technology of oxide thin films made remarkable progress after discovery of oxide superconductor materials, resulting in development of an atomic layer growth method and mist deposition method. This leading research is expected to solve such issues difficult to be easily realized by current Si technology as high-power, high-frequency and low-loss devices in power electronics, high temperature-proof and radiation-proof devices in ultimate electronics, and high-speed and dense- integrated devices in information electronics. 432 refs., 136 figs., 15 tabs.
Authors:
Publication Date:
Mar 01, 1997
Product Type:
Technical Report
Report Number:
NEDO-PR-9605
Reference Number:
SCA: 426000; 320302; 360600; PA: JP-97:0B0207; EDB-98:045072; NTS-98:004781; SN: 98001934074
Resource Relation:
Other Information: PBD: Mar 1997
Subject:
42 ENGINEERING NOT INCLUDED IN OTHER CATEGORIES; 32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATION; 36 MATERIALS SCIENCE; MICROELECTRONICS; CONTROLLED ATMOSPHERES; TEMPERATURE DEPENDENCE; PRESSURE DEPENDENCE; SEMICONDUCTOR DEVICES; SILICON CARBIDES; DIAMONDS; NITRIDES; ENERGY GAP; VACUUM SYSTEMS; THIN FILMS; OXIDES; POWER SYSTEMS; INFORMATION
OSTI ID:
601114
Research Organizations:
New Energy and Industrial Technology Development Organization, Tokyo (Japan)
Country of Origin:
Japan
Language:
Japanese
Other Identifying Numbers:
Other: ON: DE98745391; TRN: JN97B0207
Availability:
Available from Office of Scientific and Technical Information, P.O.Box 1000, Oak Ridge Tennessee 37831, (United States); OSTI as DE98745391
Submitting Site:
NEDO
Size:
203 p.
Announcement Date:
May 27, 1998

Citation Formats

NONE. Hard electronics; Hard electronics. Japan: N. p., 1997. Web.
NONE. Hard electronics; Hard electronics. Japan.
NONE. 1997. "Hard electronics; Hard electronics." Japan.
@misc{etde_601114,
title = {Hard electronics; Hard electronics}
author = {NONE}
abstractNote = {Hard material technologies were surveyed to establish the hard electronic technology which offers superior characteristics under hard operational or environmental conditions as compared with conventional Si devices. The following technologies were separately surveyed: (1) The device and integration technologies of wide gap hard semiconductors such as SiC, diamond and nitride, (2) The technology of hard semiconductor devices for vacuum micro- electronics technology, and (3) The technology of hard new material devices for oxides. The formation technology of oxide thin films made remarkable progress after discovery of oxide superconductor materials, resulting in development of an atomic layer growth method and mist deposition method. This leading research is expected to solve such issues difficult to be easily realized by current Si technology as high-power, high-frequency and low-loss devices in power electronics, high temperature-proof and radiation-proof devices in ultimate electronics, and high-speed and dense- integrated devices in information electronics. 432 refs., 136 figs., 15 tabs.}
place = {Japan}
year = {1997}
month = {Mar}
}