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Two- and three-step annealing effects of metallic and semiconducting iron silicides formed by ion beam synthesis

Abstract

Polycrystalline {beta}-FeSi{sub 2} was formed by ion beam synthesis (IBS). Annealing was made using two different procedures; 1) two-step annealing (2SA) ((T{sub 1} = 600degC, 1 hr) + (T{sub 2} = 900degC, 2 hrs)), 2) three-step annealing (3SA) ((T{sub 1} = 600degC, 1 hr) + (T{sub 2} = 1100degC, 1 min) + (T{sub 3} = 800 - 900degC, 18 hrs)). All the synthesized {beta}-FeSi{sub 2} layers presented an n-type conductivity with resistivities of 0.24 - 0.25 {Omega}{center_dot}cm, and they showed a direct band-gap of 0.801 - 0.824 eV with a moderate contribution of an indirect band-gap which is a few tens meV lower than the direct one. Although RBS and optical absorption measurements showed a superior crystalline quality of 3SA-samples to 2SA-samples, Raman scattering signals appeared only for 2SA-samples at 198 and 250 cm{sup -1}. This is explained by considering a decrease in the amount of {beta}-FeSi{sub 2} for 3SA-samples, which was deduced from the results of X-ray diffraction (XRD) analysis. The most adequate annealing temperature (T{sub 3}) for transforming {alpha}-Fe{sub 2}Si{sub 5} to {beta}-FeSi{sub 2} was found to be 850degC, in which the transformation process was observed by XRD and photomicroscope as a function of T{sub 3}. (author)
Authors:
Katsumata, Hiroshi; [1]  Makita, Yunosuke; Kobayashi, Naoto [2] 
  1. Meiji Univ., Tokyo (Japan)
  2. and others
Publication Date:
Mar 01, 1997
Product Type:
Conference
Report Number:
JAERI-Conf-97-003; CONF-9603254-
Reference Number:
SCA: 665300; PA: JPN-97:010118; EDB-98:056700; SN: 98001890461
Resource Relation:
Conference: 7. international symposium on advanced nuclear energy research, Takasaki (Japan), 18-20 Mar 1996; Other Information: PBD: Mar 1997; Related Information: Is Part Of Recent progress in accelerator beam application. Proceedings of the 7th international symposium on advanced nuclear energy research; PB: 553 p.
Subject:
66 PHYSICS; ION BEAMS; IRON SILICIDES; SYNTHESIS; ANNEALING; POLYCRYSTALS; ION IMPLANTATION; IRON 56; RUTHERFORD SCATTERING; X-RAY DIFFRACTION
OSTI ID:
600572
Research Organizations:
Japan Atomic Energy Research Inst., Tokyo (Japan)
Country of Origin:
Japan
Language:
English
Other Identifying Numbers:
Other: ON: DE97764433; TRN: JP9710118
Availability:
OSTI as DE97764433
Submitting Site:
JPN
Size:
pp. 201-206
Announcement Date:

Citation Formats

Katsumata, Hiroshi, Makita, Yunosuke, and Kobayashi, Naoto. Two- and three-step annealing effects of metallic and semiconducting iron silicides formed by ion beam synthesis. Japan: N. p., 1997. Web.
Katsumata, Hiroshi, Makita, Yunosuke, & Kobayashi, Naoto. Two- and three-step annealing effects of metallic and semiconducting iron silicides formed by ion beam synthesis. Japan.
Katsumata, Hiroshi, Makita, Yunosuke, and Kobayashi, Naoto. 1997. "Two- and three-step annealing effects of metallic and semiconducting iron silicides formed by ion beam synthesis." Japan.
@misc{etde_600572,
title = {Two- and three-step annealing effects of metallic and semiconducting iron silicides formed by ion beam synthesis}
author = {Katsumata, Hiroshi, Makita, Yunosuke, and Kobayashi, Naoto}
abstractNote = {Polycrystalline {beta}-FeSi{sub 2} was formed by ion beam synthesis (IBS). Annealing was made using two different procedures; 1) two-step annealing (2SA) ((T{sub 1} = 600degC, 1 hr) + (T{sub 2} = 900degC, 2 hrs)), 2) three-step annealing (3SA) ((T{sub 1} = 600degC, 1 hr) + (T{sub 2} = 1100degC, 1 min) + (T{sub 3} = 800 - 900degC, 18 hrs)). All the synthesized {beta}-FeSi{sub 2} layers presented an n-type conductivity with resistivities of 0.24 - 0.25 {Omega}{center_dot}cm, and they showed a direct band-gap of 0.801 - 0.824 eV with a moderate contribution of an indirect band-gap which is a few tens meV lower than the direct one. Although RBS and optical absorption measurements showed a superior crystalline quality of 3SA-samples to 2SA-samples, Raman scattering signals appeared only for 2SA-samples at 198 and 250 cm{sup -1}. This is explained by considering a decrease in the amount of {beta}-FeSi{sub 2} for 3SA-samples, which was deduced from the results of X-ray diffraction (XRD) analysis. The most adequate annealing temperature (T{sub 3}) for transforming {alpha}-Fe{sub 2}Si{sub 5} to {beta}-FeSi{sub 2} was found to be 850degC, in which the transformation process was observed by XRD and photomicroscope as a function of T{sub 3}. (author)}
place = {Japan}
year = {1997}
month = {Mar}
}