Abstract
The degradation and recovery behavior of strained Si{sub 1-x}Ge{sub x} diodes and heterojunction bipolar transistors (HBTs) by irradiated by protons are studied. The degradation of device performance and the generation of lattice defects are reported as a function of fluence and germanium content and also compared extensively with previous results obtained on electron and neutron irradiated devices. In order to study the recovery behavior of the irradiated devices, isochronal annealing is performed. The radiation source dependence of the degradation is discussed taking into account the number of knock-on atoms and the nonionizing energy loss (NIEL). (author)
Ohyama, Hidenori;
Hayama, Kiyoteru;
[1]
Vanhellemont, J;
Takami, Yasukiyo;
Sunaga, Hiromi;
Nashiyama, Isamu;
Uwatoko, Yoshiya;
Poortmans, J;
Caymax, M
- Kumamoto National Coll. of Technology, Nishigoshi (Japan)
Citation Formats
Ohyama, Hidenori, Hayama, Kiyoteru, Vanhellemont, J, Takami, Yasukiyo, Sunaga, Hiromi, Nashiyama, Isamu, Uwatoko, Yoshiya, Poortmans, J, and Caymax, M.
Degradation of SiGe devices by proton irradiation.
Japan: N. p.,
1997.
Web.
doi:10.1016/S0969-806X(97)00044-3.
Ohyama, Hidenori, Hayama, Kiyoteru, Vanhellemont, J, Takami, Yasukiyo, Sunaga, Hiromi, Nashiyama, Isamu, Uwatoko, Yoshiya, Poortmans, J, & Caymax, M.
Degradation of SiGe devices by proton irradiation.
Japan.
https://doi.org/10.1016/S0969-806X(97)00044-3
Ohyama, Hidenori, Hayama, Kiyoteru, Vanhellemont, J, Takami, Yasukiyo, Sunaga, Hiromi, Nashiyama, Isamu, Uwatoko, Yoshiya, Poortmans, J, and Caymax, M.
1997.
"Degradation of SiGe devices by proton irradiation."
Japan.
https://doi.org/10.1016/S0969-806X(97)00044-3.
@misc{etde_598298,
title = {Degradation of SiGe devices by proton irradiation}
author = {Ohyama, Hidenori, Hayama, Kiyoteru, Vanhellemont, J, Takami, Yasukiyo, Sunaga, Hiromi, Nashiyama, Isamu, Uwatoko, Yoshiya, Poortmans, J, and Caymax, M}
abstractNote = {The degradation and recovery behavior of strained Si{sub 1-x}Ge{sub x} diodes and heterojunction bipolar transistors (HBTs) by irradiated by protons are studied. The degradation of device performance and the generation of lattice defects are reported as a function of fluence and germanium content and also compared extensively with previous results obtained on electron and neutron irradiated devices. In order to study the recovery behavior of the irradiated devices, isochronal annealing is performed. The radiation source dependence of the degradation is discussed taking into account the number of knock-on atoms and the nonionizing energy loss (NIEL). (author)}
doi = {10.1016/S0969-806X(97)00044-3}
issue = {4}
volume = {50}
place = {Japan}
year = {1997}
month = {Mar}
}
title = {Degradation of SiGe devices by proton irradiation}
author = {Ohyama, Hidenori, Hayama, Kiyoteru, Vanhellemont, J, Takami, Yasukiyo, Sunaga, Hiromi, Nashiyama, Isamu, Uwatoko, Yoshiya, Poortmans, J, and Caymax, M}
abstractNote = {The degradation and recovery behavior of strained Si{sub 1-x}Ge{sub x} diodes and heterojunction bipolar transistors (HBTs) by irradiated by protons are studied. The degradation of device performance and the generation of lattice defects are reported as a function of fluence and germanium content and also compared extensively with previous results obtained on electron and neutron irradiated devices. In order to study the recovery behavior of the irradiated devices, isochronal annealing is performed. The radiation source dependence of the degradation is discussed taking into account the number of knock-on atoms and the nonionizing energy loss (NIEL). (author)}
doi = {10.1016/S0969-806X(97)00044-3}
issue = {4}
volume = {50}
place = {Japan}
year = {1997}
month = {Mar}
}