Abstract
Proton irradiation effects in silicon devices are studied for components fabricated in various substrates in order to reveal possible hardening effects. The degradation of p-n junction diodes increases in first order proportionally with the fluence, when submitted to 10 MeV proton irradiations in the range 5x10{sup 9} cm{sup -2} to 5x10{sup 11} cm{sup -2}. The damage coefficients for both p- and n-type Czochralski, Float-Zone and epitaxial wafers are reported. Charge-Coupled Devices fabricated in a 1.2 {mu}m CCD-CMOS technology are shown to be quite resistant to 59 MeV H{sup +} irradiations, irrespective of the substrate type. (author)
Citation Formats
Simoen, E, Vanhellemont, J, and Alaerts, A.
Proton irradiation effects in silicon devices.
Japan: N. p.,
1997.
Web.
Simoen, E, Vanhellemont, J, & Alaerts, A.
Proton irradiation effects in silicon devices.
Japan.
Simoen, E, Vanhellemont, J, and Alaerts, A.
1997.
"Proton irradiation effects in silicon devices."
Japan.
@misc{etde_598296,
title = {Proton irradiation effects in silicon devices}
author = {Simoen, E, Vanhellemont, J, and Alaerts, A}
abstractNote = {Proton irradiation effects in silicon devices are studied for components fabricated in various substrates in order to reveal possible hardening effects. The degradation of p-n junction diodes increases in first order proportionally with the fluence, when submitted to 10 MeV proton irradiations in the range 5x10{sup 9} cm{sup -2} to 5x10{sup 11} cm{sup -2}. The damage coefficients for both p- and n-type Czochralski, Float-Zone and epitaxial wafers are reported. Charge-Coupled Devices fabricated in a 1.2 {mu}m CCD-CMOS technology are shown to be quite resistant to 59 MeV H{sup +} irradiations, irrespective of the substrate type. (author)}
place = {Japan}
year = {1997}
month = {Mar}
}
title = {Proton irradiation effects in silicon devices}
author = {Simoen, E, Vanhellemont, J, and Alaerts, A}
abstractNote = {Proton irradiation effects in silicon devices are studied for components fabricated in various substrates in order to reveal possible hardening effects. The degradation of p-n junction diodes increases in first order proportionally with the fluence, when submitted to 10 MeV proton irradiations in the range 5x10{sup 9} cm{sup -2} to 5x10{sup 11} cm{sup -2}. The damage coefficients for both p- and n-type Czochralski, Float-Zone and epitaxial wafers are reported. Charge-Coupled Devices fabricated in a 1.2 {mu}m CCD-CMOS technology are shown to be quite resistant to 59 MeV H{sup +} irradiations, irrespective of the substrate type. (author)}
place = {Japan}
year = {1997}
month = {Mar}
}