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Analysis on anomalous degradation in silicon solar cell designed for space use

Abstract

Recently, we have found the anomalous degradation of electrical performance in silicon solar cells irradiated with charged particles in a high-fluence region. This anomalous phenomenon has two typical features, which are sudden-drop-down of electrical performances in a high-fluence region and slight recovery of the short circuit current I{sub SC} just before the sudden-drop-down. These features cannot be understood by a conventional model coming from the decrease of minority-carriers life-time. We introduce this anomalous degradation of the electrical performance in Si solar cells irradiated with electrons or protons. We also report the result of simulation for the fluence dependence of the I{sub SC}, and discuss the mechanism of this anomalous phenomenon. (author)
Authors:
Ohshima, Takeshi; Morita, Yousuke; Nashiyama, Isamu; [1]  Kawasaki, Osamu; Hisamatsu, Tadashi; Yamamoto, Yasunari; Matsuda, Sumio; Nakao, Tetsuya; Wakow, Yoshihito
  1. Japan Atomic Energy Research Inst., Takasaki, Gunma (Japan). Takasaki Radiation Chemistry Research Establishment
Publication Date:
Mar 01, 1997
Product Type:
Conference
Report Number:
JAERI-Conf-97-003; CONF-9603254-
Reference Number:
SCA: 440200; PA: JPN-97:010129; EDB-98:040066; SN: 98001890472
Resource Relation:
Conference: 7. international symposium on advanced nuclear energy research, Takasaki (Japan), 18-20 Mar 1996; Other Information: PBD: Mar 1997; Related Information: Is Part Of Recent progress in accelerator beam application. Proceedings of the 7th international symposium on advanced nuclear energy research; PB: 553 p.
Subject:
44 INSTRUMENTATION, INCLUDING NUCLEAR AND PARTICLE DETECTORS; SOLAR CELLS; PHYSICAL RADIATION EFFECTS; CHARGED PARTICLES; SILICON; ELECTRIC CURRENTS; ELECTRONS; PROTONS; ION DRIFT; ELECTRON DRIFT; SIMULATION; MOBILITY; IRRADIATION
OSTI ID:
589881
Research Organizations:
Japan Atomic Energy Research Inst., Tokyo (Japan)
Country of Origin:
Japan
Language:
English
Other Identifying Numbers:
Other: ON: DE97764433; TRN: JP9710129
Availability:
OSTI as DE97764433
Submitting Site:
JPN
Size:
pp. 256-260
Announcement Date:
May 13, 1998

Citation Formats

Ohshima, Takeshi, Morita, Yousuke, Nashiyama, Isamu, Kawasaki, Osamu, Hisamatsu, Tadashi, Yamamoto, Yasunari, Matsuda, Sumio, Nakao, Tetsuya, and Wakow, Yoshihito. Analysis on anomalous degradation in silicon solar cell designed for space use. Japan: N. p., 1997. Web.
Ohshima, Takeshi, Morita, Yousuke, Nashiyama, Isamu, Kawasaki, Osamu, Hisamatsu, Tadashi, Yamamoto, Yasunari, Matsuda, Sumio, Nakao, Tetsuya, & Wakow, Yoshihito. Analysis on anomalous degradation in silicon solar cell designed for space use. Japan.
Ohshima, Takeshi, Morita, Yousuke, Nashiyama, Isamu, Kawasaki, Osamu, Hisamatsu, Tadashi, Yamamoto, Yasunari, Matsuda, Sumio, Nakao, Tetsuya, and Wakow, Yoshihito. 1997. "Analysis on anomalous degradation in silicon solar cell designed for space use." Japan.
@misc{etde_589881,
title = {Analysis on anomalous degradation in silicon solar cell designed for space use}
author = {Ohshima, Takeshi, Morita, Yousuke, Nashiyama, Isamu, Kawasaki, Osamu, Hisamatsu, Tadashi, Yamamoto, Yasunari, Matsuda, Sumio, Nakao, Tetsuya, and Wakow, Yoshihito}
abstractNote = {Recently, we have found the anomalous degradation of electrical performance in silicon solar cells irradiated with charged particles in a high-fluence region. This anomalous phenomenon has two typical features, which are sudden-drop-down of electrical performances in a high-fluence region and slight recovery of the short circuit current I{sub SC} just before the sudden-drop-down. These features cannot be understood by a conventional model coming from the decrease of minority-carriers life-time. We introduce this anomalous degradation of the electrical performance in Si solar cells irradiated with electrons or protons. We also report the result of simulation for the fluence dependence of the I{sub SC}, and discuss the mechanism of this anomalous phenomenon. (author)}
place = {Japan}
year = {1997}
month = {Mar}
}