Abstract
In this paper, we propose a method to evaluate the depth profile of trapped charges in an oxide layer on SiC. Using this method, 6H-SiC MOS structures with different oxide thickness were fabricated on the same substrate under the same oxidation condition, and the depth profile of oxide-trapped charges before and after {sup 60}Co-gamma ray irradiation were obtained. It is found, from the depth profiling, that the trapping mechanism of electrons and holes in the oxide strongly depends on the bias polarity during irradiation, and these charges are trapped near 6H-SiC/SiO{sub 2} interface. We believe that this method is very useful for estimation of the oxide-trapped charges in 6H-SiC MOS structures. (author)
Saitoh, Kazunari;
Takahashi, Yoshihiro;
Ohnishi, Kazunori;
[1]
Yoshikawa, Masahito;
Ohshima, Takeshi;
Itoh, Hisayoshi;
Nashiyama, Isamu
- Nihon Univ., Tokyo (Japan). Coll. of Science and Technology
Citation Formats
Saitoh, Kazunari, Takahashi, Yoshihiro, Ohnishi, Kazunori, Yoshikawa, Masahito, Ohshima, Takeshi, Itoh, Hisayoshi, and Nashiyama, Isamu.
Depth profiling of oxide-trapped charges in 6H-SiC MOS structures by slant etching method.
Japan: N. p.,
1997.
Web.
Saitoh, Kazunari, Takahashi, Yoshihiro, Ohnishi, Kazunori, Yoshikawa, Masahito, Ohshima, Takeshi, Itoh, Hisayoshi, & Nashiyama, Isamu.
Depth profiling of oxide-trapped charges in 6H-SiC MOS structures by slant etching method.
Japan.
Saitoh, Kazunari, Takahashi, Yoshihiro, Ohnishi, Kazunori, Yoshikawa, Masahito, Ohshima, Takeshi, Itoh, Hisayoshi, and Nashiyama, Isamu.
1997.
"Depth profiling of oxide-trapped charges in 6H-SiC MOS structures by slant etching method."
Japan.
@misc{etde_589872,
title = {Depth profiling of oxide-trapped charges in 6H-SiC MOS structures by slant etching method}
author = {Saitoh, Kazunari, Takahashi, Yoshihiro, Ohnishi, Kazunori, Yoshikawa, Masahito, Ohshima, Takeshi, Itoh, Hisayoshi, and Nashiyama, Isamu}
abstractNote = {In this paper, we propose a method to evaluate the depth profile of trapped charges in an oxide layer on SiC. Using this method, 6H-SiC MOS structures with different oxide thickness were fabricated on the same substrate under the same oxidation condition, and the depth profile of oxide-trapped charges before and after {sup 60}Co-gamma ray irradiation were obtained. It is found, from the depth profiling, that the trapping mechanism of electrons and holes in the oxide strongly depends on the bias polarity during irradiation, and these charges are trapped near 6H-SiC/SiO{sub 2} interface. We believe that this method is very useful for estimation of the oxide-trapped charges in 6H-SiC MOS structures. (author)}
place = {Japan}
year = {1997}
month = {Mar}
}
title = {Depth profiling of oxide-trapped charges in 6H-SiC MOS structures by slant etching method}
author = {Saitoh, Kazunari, Takahashi, Yoshihiro, Ohnishi, Kazunori, Yoshikawa, Masahito, Ohshima, Takeshi, Itoh, Hisayoshi, and Nashiyama, Isamu}
abstractNote = {In this paper, we propose a method to evaluate the depth profile of trapped charges in an oxide layer on SiC. Using this method, 6H-SiC MOS structures with different oxide thickness were fabricated on the same substrate under the same oxidation condition, and the depth profile of oxide-trapped charges before and after {sup 60}Co-gamma ray irradiation were obtained. It is found, from the depth profiling, that the trapping mechanism of electrons and holes in the oxide strongly depends on the bias polarity during irradiation, and these charges are trapped near 6H-SiC/SiO{sub 2} interface. We believe that this method is very useful for estimation of the oxide-trapped charges in 6H-SiC MOS structures. (author)}
place = {Japan}
year = {1997}
month = {Mar}
}