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Depth profiling of oxide-trapped charges in 6H-SiC MOS structures by slant etching method

Abstract

In this paper, we propose a method to evaluate the depth profile of trapped charges in an oxide layer on SiC. Using this method, 6H-SiC MOS structures with different oxide thickness were fabricated on the same substrate under the same oxidation condition, and the depth profile of oxide-trapped charges before and after {sup 60}Co-gamma ray irradiation were obtained. It is found, from the depth profiling, that the trapping mechanism of electrons and holes in the oxide strongly depends on the bias polarity during irradiation, and these charges are trapped near 6H-SiC/SiO{sub 2} interface. We believe that this method is very useful for estimation of the oxide-trapped charges in 6H-SiC MOS structures. (author)
Authors:
Saitoh, Kazunari; Takahashi, Yoshihiro; Ohnishi, Kazunori; [1]  Yoshikawa, Masahito; Ohshima, Takeshi; Itoh, Hisayoshi; Nashiyama, Isamu
  1. Nihon Univ., Tokyo (Japan). Coll. of Science and Technology
Publication Date:
Mar 01, 1997
Product Type:
Conference
Report Number:
JAERI-Conf-97-003; CONF-9603254-
Reference Number:
SCA: 360605; PA: JPN-97:010126; EDB-98:039394; SN: 98001890469
Resource Relation:
Conference: 7. international symposium on advanced nuclear energy research, Takasaki (Japan), 18-20 Mar 1996; Other Information: PBD: Mar 1997; Related Information: Is Part Of Recent progress in accelerator beam application. Proceedings of the 7th international symposium on advanced nuclear energy research; PB: 553 p.
Subject:
36 MATERIALS SCIENCE; SILICON CARBIDES; HEXAGONAL LATTICES; MOS TRANSISTORS; LAYERS; OXIDES; SILICON DIODES; CHARGE-COUPLED DEVICES; CHARGE CARRIERS; FABRICATION; ETCHING; TRAPPING; DEPTH; SPATIAL DISTRIBUTION
OSTI ID:
589872
Research Organizations:
Japan Atomic Energy Research Inst., Tokyo (Japan)
Country of Origin:
Japan
Language:
English
Other Identifying Numbers:
Other: ON: DE97764433; TRN: JP9710126
Availability:
OSTI as DE97764433
Submitting Site:
JPN
Size:
pp. 243-248
Announcement Date:

Citation Formats

Saitoh, Kazunari, Takahashi, Yoshihiro, Ohnishi, Kazunori, Yoshikawa, Masahito, Ohshima, Takeshi, Itoh, Hisayoshi, and Nashiyama, Isamu. Depth profiling of oxide-trapped charges in 6H-SiC MOS structures by slant etching method. Japan: N. p., 1997. Web.
Saitoh, Kazunari, Takahashi, Yoshihiro, Ohnishi, Kazunori, Yoshikawa, Masahito, Ohshima, Takeshi, Itoh, Hisayoshi, & Nashiyama, Isamu. Depth profiling of oxide-trapped charges in 6H-SiC MOS structures by slant etching method. Japan.
Saitoh, Kazunari, Takahashi, Yoshihiro, Ohnishi, Kazunori, Yoshikawa, Masahito, Ohshima, Takeshi, Itoh, Hisayoshi, and Nashiyama, Isamu. 1997. "Depth profiling of oxide-trapped charges in 6H-SiC MOS structures by slant etching method." Japan.
@misc{etde_589872,
title = {Depth profiling of oxide-trapped charges in 6H-SiC MOS structures by slant etching method}
author = {Saitoh, Kazunari, Takahashi, Yoshihiro, Ohnishi, Kazunori, Yoshikawa, Masahito, Ohshima, Takeshi, Itoh, Hisayoshi, and Nashiyama, Isamu}
abstractNote = {In this paper, we propose a method to evaluate the depth profile of trapped charges in an oxide layer on SiC. Using this method, 6H-SiC MOS structures with different oxide thickness were fabricated on the same substrate under the same oxidation condition, and the depth profile of oxide-trapped charges before and after {sup 60}Co-gamma ray irradiation were obtained. It is found, from the depth profiling, that the trapping mechanism of electrons and holes in the oxide strongly depends on the bias polarity during irradiation, and these charges are trapped near 6H-SiC/SiO{sub 2} interface. We believe that this method is very useful for estimation of the oxide-trapped charges in 6H-SiC MOS structures. (author)}
place = {Japan}
year = {1997}
month = {Mar}
}