A new method of measuring the Hall effect in variable magnetic fields at super-high frequencies using slotted line is proposed. The method is applied to the measurement of the Hall effect in n-InSb samples. It is shown that the level of output signal of samples reduces with the increasing the charge carrier concentration and with decreasing the mobility. But the range of quadratic part of the dependence of the output signal power on the control current increases. It is stated that the output signal of samples does not depend on the magnetic field frequency in the range of 4-7.3 GHz.