Abstract
We have studied effects of not only defects but also an added elements on trap-sites of hydrogen in metals. For the purpose, we observed depth profiles and thermal behaviors of hydrogen implanted into Al-1.5at.%Si alloy samples in an implantation-temperature range of liquid nitrogen temperature (LNT) to 373K at different doses. The results were compared with those for pure aluminum samples. It was found that hydrogen is trapped as molecules in grain boundaries of Al/Si. (author)
Ogura, Masahiko;
Yamaji, Norisuke;
Imai, Makoto;
Itoh, Akio;
Imanishi, Nobutsugu
[1]
- Kyoto Univ. (Japan). Faculty of Engineering
Citation Formats
Ogura, Masahiko, Yamaji, Norisuke, Imai, Makoto, Itoh, Akio, and Imanishi, Nobutsugu.
The annealing behavior of hydrogen implanted into Al-Si alloy.
Japan: N. p.,
1997.
Web.
doi:10.1016/S0969-806X(97)00014-5.
Ogura, Masahiko, Yamaji, Norisuke, Imai, Makoto, Itoh, Akio, & Imanishi, Nobutsugu.
The annealing behavior of hydrogen implanted into Al-Si alloy.
Japan.
https://doi.org/10.1016/S0969-806X(97)00014-5
Ogura, Masahiko, Yamaji, Norisuke, Imai, Makoto, Itoh, Akio, and Imanishi, Nobutsugu.
1997.
"The annealing behavior of hydrogen implanted into Al-Si alloy."
Japan.
https://doi.org/10.1016/S0969-806X(97)00014-5.
@misc{etde_588419,
title = {The annealing behavior of hydrogen implanted into Al-Si alloy}
author = {Ogura, Masahiko, Yamaji, Norisuke, Imai, Makoto, Itoh, Akio, and Imanishi, Nobutsugu}
abstractNote = {We have studied effects of not only defects but also an added elements on trap-sites of hydrogen in metals. For the purpose, we observed depth profiles and thermal behaviors of hydrogen implanted into Al-1.5at.%Si alloy samples in an implantation-temperature range of liquid nitrogen temperature (LNT) to 373K at different doses. The results were compared with those for pure aluminum samples. It was found that hydrogen is trapped as molecules in grain boundaries of Al/Si. (author)}
doi = {10.1016/S0969-806X(97)00014-5}
issue = {6}
volume = {49}
place = {Japan}
year = {1997}
month = {Mar}
}
title = {The annealing behavior of hydrogen implanted into Al-Si alloy}
author = {Ogura, Masahiko, Yamaji, Norisuke, Imai, Makoto, Itoh, Akio, and Imanishi, Nobutsugu}
abstractNote = {We have studied effects of not only defects but also an added elements on trap-sites of hydrogen in metals. For the purpose, we observed depth profiles and thermal behaviors of hydrogen implanted into Al-1.5at.%Si alloy samples in an implantation-temperature range of liquid nitrogen temperature (LNT) to 373K at different doses. The results were compared with those for pure aluminum samples. It was found that hydrogen is trapped as molecules in grain boundaries of Al/Si. (author)}
doi = {10.1016/S0969-806X(97)00014-5}
issue = {6}
volume = {49}
place = {Japan}
year = {1997}
month = {Mar}
}