Abstract
Phosphorus is among potential n-type dopants in diamond. High pressure synthetic diamond crystals of type IIa implanted with high energy (9-18 MeV) phosphorus ions have been studied by using electron spin resonance (ESR) technique. The intensity and the linewidth of the ESR signal attributed to the dangling bond of the amorphous phase varied with the implantation dose, suggesting the nature of the amorphization varies with the dose. The ESR signals of point defects have been observed in the low dose as-implanted crystals and in the high dose crystals annealed at high temperature and at high pressure. (author)
Isoya, J;
[1]
Kanda, H;
Morita, Y;
Ohshima, T
- University of Library and Information Science, Tsukuba, Ibaraki (Japan)
Citation Formats
Isoya, J, Kanda, H, Morita, Y, and Ohshima, T.
ESR studies of high-energy phosphorus-ion implanted synthetic diamond crystals.
Japan: N. p.,
1997.
Web.
doi:10.1016/S0969-806X(97)00070-4.
Isoya, J, Kanda, H, Morita, Y, & Ohshima, T.
ESR studies of high-energy phosphorus-ion implanted synthetic diamond crystals.
Japan.
https://doi.org/10.1016/S0969-806X(97)00070-4
Isoya, J, Kanda, H, Morita, Y, and Ohshima, T.
1997.
"ESR studies of high-energy phosphorus-ion implanted synthetic diamond crystals."
Japan.
https://doi.org/10.1016/S0969-806X(97)00070-4.
@misc{etde_588403,
title = {ESR studies of high-energy phosphorus-ion implanted synthetic diamond crystals}
author = {Isoya, J, Kanda, H, Morita, Y, and Ohshima, T}
abstractNote = {Phosphorus is among potential n-type dopants in diamond. High pressure synthetic diamond crystals of type IIa implanted with high energy (9-18 MeV) phosphorus ions have been studied by using electron spin resonance (ESR) technique. The intensity and the linewidth of the ESR signal attributed to the dangling bond of the amorphous phase varied with the implantation dose, suggesting the nature of the amorphization varies with the dose. The ESR signals of point defects have been observed in the low dose as-implanted crystals and in the high dose crystals annealed at high temperature and at high pressure. (author)}
doi = {10.1016/S0969-806X(97)00070-4}
issue = {4}
volume = {50}
place = {Japan}
year = {1997}
month = {Mar}
}
title = {ESR studies of high-energy phosphorus-ion implanted synthetic diamond crystals}
author = {Isoya, J, Kanda, H, Morita, Y, and Ohshima, T}
abstractNote = {Phosphorus is among potential n-type dopants in diamond. High pressure synthetic diamond crystals of type IIa implanted with high energy (9-18 MeV) phosphorus ions have been studied by using electron spin resonance (ESR) technique. The intensity and the linewidth of the ESR signal attributed to the dangling bond of the amorphous phase varied with the implantation dose, suggesting the nature of the amorphization varies with the dose. The ESR signals of point defects have been observed in the low dose as-implanted crystals and in the high dose crystals annealed at high temperature and at high pressure. (author)}
doi = {10.1016/S0969-806X(97)00070-4}
issue = {4}
volume = {50}
place = {Japan}
year = {1997}
month = {Mar}
}