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ESR studies of high-energy phosphorus-ion implanted synthetic diamond crystals

Abstract

Phosphorus is among potential n-type dopants in diamond. High pressure synthetic diamond crystals of type IIa implanted with high energy (9-18 MeV) phosphorus ions have been studied by using electron spin resonance (ESR) technique. The intensity and the linewidth of the ESR signal attributed to the dangling bond of the amorphous phase varied with the implantation dose, suggesting the nature of the amorphization varies with the dose. The ESR signals of point defects have been observed in the low dose as-implanted crystals and in the high dose crystals annealed at high temperature and at high pressure. (author)
Authors:
Isoya, J; [1]  Kanda, H; Morita, Y; Ohshima, T
  1. University of Library and Information Science, Tsukuba, Ibaraki (Japan)
Publication Date:
Mar 01, 1997
Product Type:
Conference
Report Number:
JAERI-Conf-97-003; CONF-9603254-
Reference Number:
SCA: 360605; PA: JPN-97:010151; EDB-98:039397; SN: 98001890494
Resource Relation:
Journal Volume: 50; Journal Issue: 4; Conference: 7. international symposium on advanced nuclear energy research, Takasaki (Japan), 18-20 Mar 1996; Other Information: PBD: Mar 1997; Related Information: Is Part Of Recent progress in accelerator beam application. Proceedings of the 7th international symposium on advanced nuclear energy research; PB: 553 p.
Subject:
36 MATERIALS SCIENCE; DIAMONDS; DOPED MATERIALS; AMORPHOUS STATE; N-TYPE CONDUCTORS; ION IMPLANTATION; PHOSPHORUS IONS; MEV RANGE; ELECTRON SPIN RESONANCE; CRYSTAL DEFECTS; DOSE-RESPONSE RELATIONSHIPS; ELECTRONIC EQUIPMENT
OSTI ID:
588403
Research Organizations:
Japan Atomic Energy Research Inst., Tokyo (Japan)
Country of Origin:
Japan
Language:
English
Other Identifying Numbers:
Journal ID: ISSN 0969-806X; Other: ON: DE97764433; TRN: JP9710151
Availability:
OSTI as DE97764433
Submitting Site:
JPN
Size:
pp. 354-358
Announcement Date:

Citation Formats

Isoya, J, Kanda, H, Morita, Y, and Ohshima, T. ESR studies of high-energy phosphorus-ion implanted synthetic diamond crystals. Japan: N. p., 1997. Web. doi:10.1016/S0969-806X(97)00070-4.
Isoya, J, Kanda, H, Morita, Y, & Ohshima, T. ESR studies of high-energy phosphorus-ion implanted synthetic diamond crystals. Japan. doi:10.1016/S0969-806X(97)00070-4.
Isoya, J, Kanda, H, Morita, Y, and Ohshima, T. 1997. "ESR studies of high-energy phosphorus-ion implanted synthetic diamond crystals." Japan. doi:10.1016/S0969-806X(97)00070-4. https://www.osti.gov/servlets/purl/10.1016/S0969-806X(97)00070-4.
@misc{etde_588403,
title = {ESR studies of high-energy phosphorus-ion implanted synthetic diamond crystals}
author = {Isoya, J, Kanda, H, Morita, Y, and Ohshima, T}
abstractNote = {Phosphorus is among potential n-type dopants in diamond. High pressure synthetic diamond crystals of type IIa implanted with high energy (9-18 MeV) phosphorus ions have been studied by using electron spin resonance (ESR) technique. The intensity and the linewidth of the ESR signal attributed to the dangling bond of the amorphous phase varied with the implantation dose, suggesting the nature of the amorphization varies with the dose. The ESR signals of point defects have been observed in the low dose as-implanted crystals and in the high dose crystals annealed at high temperature and at high pressure. (author)}
doi = {10.1016/S0969-806X(97)00070-4}
issue = {4}
volume = {50}
place = {Japan}
year = {1997}
month = {Mar}
}