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Radiation-induced effects in MgO single crystal by 200 keV and 1 MeV Ni ion implantation

Abstract

MgO(100) single crystals were implanted with 1.0 MeV and 200 keV Ni ions between 10{sup 15} and 10{sup 17} ions/cm{sup 2} at room temperature. Before and after thermal annealing the radiation damage and the lattice location of implanted Ni ions were analyzed by using Rutherford backscattering spectrometry with channeling and optical absorption measurements. For 1.0 MeV Ni ions, the disorder of Mg atoms increased slowly with ion dose near surface region, while it increased sharply and saturated with ion dose from 2x10{sup 16} ions/cm{sup 2} near ion range. The radiation damage was recovered and implanted Ni ions diffused to the whole of crystal and occupied substitutional positions after 1400degC annealing. For 200 keV Ni ions, the disorder of Mg atoms increased with dose near ion range and had a maximum at about 5x10{sup 16} ions/cm{sup 2}. This tendency agrees with the behavior of color centers obtained from optical measurements. For thermal annealing the radiation damage did not change during 500degC annealing, but the aggregate centers appeared after 300degC annealing. (author)
Authors:
Takahashi, Ryohei; Nakai, Yoshihiro; Hamaguchi, Dai [1] 
  1. Kyoto Inst. of Tech. (Japan); and others
Publication Date:
Mar 01, 1997
Product Type:
Conference
Report Number:
JAERI-Conf-97-003; CONF-9603254-
Reference Number:
SCA: 360206; PA: JPN-97:010150; EDB-98:039173; SN: 98001890493
Resource Relation:
Conference: 7. international symposium on advanced nuclear energy research, Takasaki (Japan), 18-20 Mar 1996; Other Information: PBD: Mar 1997; Related Information: Is Part Of Recent progress in accelerator beam application. Proceedings of the 7th international symposium on advanced nuclear energy research; PB: 553 p.
Subject:
36 MATERIALS SCIENCE; MAGNESIUM OXIDES; MONOCRYSTALS; ION IMPLANTATION; NICKEL IONS; KEV RANGE 100-1000; PHYSICAL RADIATION EFFECTS; ANNEALING; ION CHANNELING; ABSORPTION SPECTRA; RUTHERFORD SCATTERING; BACKSCATTERING
OSTI ID:
588402
Research Organizations:
Japan Atomic Energy Research Inst., Tokyo (Japan)
Country of Origin:
Japan
Language:
English
Other Identifying Numbers:
Other: ON: DE97764433; TRN: JP9710150
Availability:
OSTI as DE97764433
Submitting Site:
JPN
Size:
pp. 349-353
Announcement Date:

Citation Formats

Takahashi, Ryohei, Nakai, Yoshihiro, and Hamaguchi, Dai. Radiation-induced effects in MgO single crystal by 200 keV and 1 MeV Ni ion implantation. Japan: N. p., 1997. Web.
Takahashi, Ryohei, Nakai, Yoshihiro, & Hamaguchi, Dai. Radiation-induced effects in MgO single crystal by 200 keV and 1 MeV Ni ion implantation. Japan.
Takahashi, Ryohei, Nakai, Yoshihiro, and Hamaguchi, Dai. 1997. "Radiation-induced effects in MgO single crystal by 200 keV and 1 MeV Ni ion implantation." Japan.
@misc{etde_588402,
title = {Radiation-induced effects in MgO single crystal by 200 keV and 1 MeV Ni ion implantation}
author = {Takahashi, Ryohei, Nakai, Yoshihiro, and Hamaguchi, Dai}
abstractNote = {MgO(100) single crystals were implanted with 1.0 MeV and 200 keV Ni ions between 10{sup 15} and 10{sup 17} ions/cm{sup 2} at room temperature. Before and after thermal annealing the radiation damage and the lattice location of implanted Ni ions were analyzed by using Rutherford backscattering spectrometry with channeling and optical absorption measurements. For 1.0 MeV Ni ions, the disorder of Mg atoms increased slowly with ion dose near surface region, while it increased sharply and saturated with ion dose from 2x10{sup 16} ions/cm{sup 2} near ion range. The radiation damage was recovered and implanted Ni ions diffused to the whole of crystal and occupied substitutional positions after 1400degC annealing. For 200 keV Ni ions, the disorder of Mg atoms increased with dose near ion range and had a maximum at about 5x10{sup 16} ions/cm{sup 2}. This tendency agrees with the behavior of color centers obtained from optical measurements. For thermal annealing the radiation damage did not change during 500degC annealing, but the aggregate centers appeared after 300degC annealing. (author)}
place = {Japan}
year = {1997}
month = {Mar}
}