Abstract
MgO(100) single crystals were implanted with 1.0 MeV and 200 keV Ni ions between 10{sup 15} and 10{sup 17} ions/cm{sup 2} at room temperature. Before and after thermal annealing the radiation damage and the lattice location of implanted Ni ions were analyzed by using Rutherford backscattering spectrometry with channeling and optical absorption measurements. For 1.0 MeV Ni ions, the disorder of Mg atoms increased slowly with ion dose near surface region, while it increased sharply and saturated with ion dose from 2x10{sup 16} ions/cm{sup 2} near ion range. The radiation damage was recovered and implanted Ni ions diffused to the whole of crystal and occupied substitutional positions after 1400degC annealing. For 200 keV Ni ions, the disorder of Mg atoms increased with dose near ion range and had a maximum at about 5x10{sup 16} ions/cm{sup 2}. This tendency agrees with the behavior of color centers obtained from optical measurements. For thermal annealing the radiation damage did not change during 500degC annealing, but the aggregate centers appeared after 300degC annealing. (author)
Citation Formats
Takahashi, Ryohei, Nakai, Yoshihiro, and Hamaguchi, Dai.
Radiation-induced effects in MgO single crystal by 200 keV and 1 MeV Ni ion implantation.
Japan: N. p.,
1997.
Web.
Takahashi, Ryohei, Nakai, Yoshihiro, & Hamaguchi, Dai.
Radiation-induced effects in MgO single crystal by 200 keV and 1 MeV Ni ion implantation.
Japan.
Takahashi, Ryohei, Nakai, Yoshihiro, and Hamaguchi, Dai.
1997.
"Radiation-induced effects in MgO single crystal by 200 keV and 1 MeV Ni ion implantation."
Japan.
@misc{etde_588402,
title = {Radiation-induced effects in MgO single crystal by 200 keV and 1 MeV Ni ion implantation}
author = {Takahashi, Ryohei, Nakai, Yoshihiro, and Hamaguchi, Dai}
abstractNote = {MgO(100) single crystals were implanted with 1.0 MeV and 200 keV Ni ions between 10{sup 15} and 10{sup 17} ions/cm{sup 2} at room temperature. Before and after thermal annealing the radiation damage and the lattice location of implanted Ni ions were analyzed by using Rutherford backscattering spectrometry with channeling and optical absorption measurements. For 1.0 MeV Ni ions, the disorder of Mg atoms increased slowly with ion dose near surface region, while it increased sharply and saturated with ion dose from 2x10{sup 16} ions/cm{sup 2} near ion range. The radiation damage was recovered and implanted Ni ions diffused to the whole of crystal and occupied substitutional positions after 1400degC annealing. For 200 keV Ni ions, the disorder of Mg atoms increased with dose near ion range and had a maximum at about 5x10{sup 16} ions/cm{sup 2}. This tendency agrees with the behavior of color centers obtained from optical measurements. For thermal annealing the radiation damage did not change during 500degC annealing, but the aggregate centers appeared after 300degC annealing. (author)}
place = {Japan}
year = {1997}
month = {Mar}
}
title = {Radiation-induced effects in MgO single crystal by 200 keV and 1 MeV Ni ion implantation}
author = {Takahashi, Ryohei, Nakai, Yoshihiro, and Hamaguchi, Dai}
abstractNote = {MgO(100) single crystals were implanted with 1.0 MeV and 200 keV Ni ions between 10{sup 15} and 10{sup 17} ions/cm{sup 2} at room temperature. Before and after thermal annealing the radiation damage and the lattice location of implanted Ni ions were analyzed by using Rutherford backscattering spectrometry with channeling and optical absorption measurements. For 1.0 MeV Ni ions, the disorder of Mg atoms increased slowly with ion dose near surface region, while it increased sharply and saturated with ion dose from 2x10{sup 16} ions/cm{sup 2} near ion range. The radiation damage was recovered and implanted Ni ions diffused to the whole of crystal and occupied substitutional positions after 1400degC annealing. For 200 keV Ni ions, the disorder of Mg atoms increased with dose near ion range and had a maximum at about 5x10{sup 16} ions/cm{sup 2}. This tendency agrees with the behavior of color centers obtained from optical measurements. For thermal annealing the radiation damage did not change during 500degC annealing, but the aggregate centers appeared after 300degC annealing. (author)}
place = {Japan}
year = {1997}
month = {Mar}
}