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LET effects of high energy ion beam irradiation on polysilanes

Abstract

Thin films of poly(di-n-hexylsilane) were irradiated with 2-20 MeV H{sup +} and He{sup +} ion beams. The beams caused heterogeneous reactions of crosslinking and main chain scission in the films. The relative efficiency of the crosslinking was drastically changed in comparison with that of main chain scission. The anomalous change in the molecular weight distribution was analyzed with increasing irradiation fluence, and the ion beam induced reaction radius; track radius was determined for the radiation sources by the function of molecular weight dispersion. Obtained values were 59{+-}15 A and 14{+-}6 A for 2 MeV He{sup +} and 20 MeV H{sup +} ion beams respectively. (author)
Authors:
Seki, Shu; Kanzaki, Kenichi; Tagawa, Seiichi; Yoshida, Yoichi; [1]  Kudoh, Hisaaki; Sugimoto, Masaki; Sasuga, Tsuneo; Seguchi, Tadao; Shibata, Hiromi
  1. Osaka Univ., Ibaraki (Japan). Inst. of Scientific and Industrial Research
Publication Date:
Mar 01, 1997
Product Type:
Conference
Report Number:
JAERI-Conf-97-003; CONF-9603254-
Reference Number:
SCA: 400600; PA: JPN-97:010135; EDB-98:039623; SN: 98001890478
Resource Relation:
Conference: 7. international symposium on advanced nuclear energy research, Takasaki (Japan), 18-20 Mar 1996; Other Information: PBD: Mar 1997; Related Information: Is Part Of Recent progress in accelerator beam application. Proceedings of the 7th international symposium on advanced nuclear energy research; PB: 553 p.
Subject:
40 CHEMISTRY; POLYMERS; SILANES; MOLECULAR WEIGHT; CROSS-LINKING; RADIOLYSIS; PROTON BEAMS; HELIUM 4 BEAMS; SPATIAL DOSE DISTRIBUTIONS; DOSE-RESPONSE RELATIONSHIPS; PARTICLE TRACKS; SIZE; LET
OSTI ID:
588368
Research Organizations:
Japan Atomic Energy Research Inst., Tokyo (Japan)
Country of Origin:
Japan
Language:
English
Other Identifying Numbers:
Other: ON: DE97764433; TRN: JP9710135
Availability:
OSTI as DE97764433
Submitting Site:
JPN
Size:
pp. 281-285
Announcement Date:

Citation Formats

Seki, Shu, Kanzaki, Kenichi, Tagawa, Seiichi, Yoshida, Yoichi, Kudoh, Hisaaki, Sugimoto, Masaki, Sasuga, Tsuneo, Seguchi, Tadao, and Shibata, Hiromi. LET effects of high energy ion beam irradiation on polysilanes. Japan: N. p., 1997. Web.
Seki, Shu, Kanzaki, Kenichi, Tagawa, Seiichi, Yoshida, Yoichi, Kudoh, Hisaaki, Sugimoto, Masaki, Sasuga, Tsuneo, Seguchi, Tadao, & Shibata, Hiromi. LET effects of high energy ion beam irradiation on polysilanes. Japan.
Seki, Shu, Kanzaki, Kenichi, Tagawa, Seiichi, Yoshida, Yoichi, Kudoh, Hisaaki, Sugimoto, Masaki, Sasuga, Tsuneo, Seguchi, Tadao, and Shibata, Hiromi. 1997. "LET effects of high energy ion beam irradiation on polysilanes." Japan.
@misc{etde_588368,
title = {LET effects of high energy ion beam irradiation on polysilanes}
author = {Seki, Shu, Kanzaki, Kenichi, Tagawa, Seiichi, Yoshida, Yoichi, Kudoh, Hisaaki, Sugimoto, Masaki, Sasuga, Tsuneo, Seguchi, Tadao, and Shibata, Hiromi}
abstractNote = {Thin films of poly(di-n-hexylsilane) were irradiated with 2-20 MeV H{sup +} and He{sup +} ion beams. The beams caused heterogeneous reactions of crosslinking and main chain scission in the films. The relative efficiency of the crosslinking was drastically changed in comparison with that of main chain scission. The anomalous change in the molecular weight distribution was analyzed with increasing irradiation fluence, and the ion beam induced reaction radius; track radius was determined for the radiation sources by the function of molecular weight dispersion. Obtained values were 59{+-}15 A and 14{+-}6 A for 2 MeV He{sup +} and 20 MeV H{sup +} ion beams respectively. (author)}
place = {Japan}
year = {1997}
month = {Mar}
}