Abstract
Thin films of poly(di-n-hexylsilane) were irradiated with 2-20 MeV H{sup +} and He{sup +} ion beams. The beams caused heterogeneous reactions of crosslinking and main chain scission in the films. The relative efficiency of the crosslinking was drastically changed in comparison with that of main chain scission. The anomalous change in the molecular weight distribution was analyzed with increasing irradiation fluence, and the ion beam induced reaction radius; track radius was determined for the radiation sources by the function of molecular weight dispersion. Obtained values were 59{+-}15 A and 14{+-}6 A for 2 MeV He{sup +} and 20 MeV H{sup +} ion beams respectively. (author)
Seki, Shu;
Kanzaki, Kenichi;
Tagawa, Seiichi;
Yoshida, Yoichi;
[1]
Kudoh, Hisaaki;
Sugimoto, Masaki;
Sasuga, Tsuneo;
Seguchi, Tadao;
Shibata, Hiromi
- Osaka Univ., Ibaraki (Japan). Inst. of Scientific and Industrial Research
Citation Formats
Seki, Shu, Kanzaki, Kenichi, Tagawa, Seiichi, Yoshida, Yoichi, Kudoh, Hisaaki, Sugimoto, Masaki, Sasuga, Tsuneo, Seguchi, Tadao, and Shibata, Hiromi.
LET effects of high energy ion beam irradiation on polysilanes.
Japan: N. p.,
1997.
Web.
Seki, Shu, Kanzaki, Kenichi, Tagawa, Seiichi, Yoshida, Yoichi, Kudoh, Hisaaki, Sugimoto, Masaki, Sasuga, Tsuneo, Seguchi, Tadao, & Shibata, Hiromi.
LET effects of high energy ion beam irradiation on polysilanes.
Japan.
Seki, Shu, Kanzaki, Kenichi, Tagawa, Seiichi, Yoshida, Yoichi, Kudoh, Hisaaki, Sugimoto, Masaki, Sasuga, Tsuneo, Seguchi, Tadao, and Shibata, Hiromi.
1997.
"LET effects of high energy ion beam irradiation on polysilanes."
Japan.
@misc{etde_588368,
title = {LET effects of high energy ion beam irradiation on polysilanes}
author = {Seki, Shu, Kanzaki, Kenichi, Tagawa, Seiichi, Yoshida, Yoichi, Kudoh, Hisaaki, Sugimoto, Masaki, Sasuga, Tsuneo, Seguchi, Tadao, and Shibata, Hiromi}
abstractNote = {Thin films of poly(di-n-hexylsilane) were irradiated with 2-20 MeV H{sup +} and He{sup +} ion beams. The beams caused heterogeneous reactions of crosslinking and main chain scission in the films. The relative efficiency of the crosslinking was drastically changed in comparison with that of main chain scission. The anomalous change in the molecular weight distribution was analyzed with increasing irradiation fluence, and the ion beam induced reaction radius; track radius was determined for the radiation sources by the function of molecular weight dispersion. Obtained values were 59{+-}15 A and 14{+-}6 A for 2 MeV He{sup +} and 20 MeV H{sup +} ion beams respectively. (author)}
place = {Japan}
year = {1997}
month = {Mar}
}
title = {LET effects of high energy ion beam irradiation on polysilanes}
author = {Seki, Shu, Kanzaki, Kenichi, Tagawa, Seiichi, Yoshida, Yoichi, Kudoh, Hisaaki, Sugimoto, Masaki, Sasuga, Tsuneo, Seguchi, Tadao, and Shibata, Hiromi}
abstractNote = {Thin films of poly(di-n-hexylsilane) were irradiated with 2-20 MeV H{sup +} and He{sup +} ion beams. The beams caused heterogeneous reactions of crosslinking and main chain scission in the films. The relative efficiency of the crosslinking was drastically changed in comparison with that of main chain scission. The anomalous change in the molecular weight distribution was analyzed with increasing irradiation fluence, and the ion beam induced reaction radius; track radius was determined for the radiation sources by the function of molecular weight dispersion. Obtained values were 59{+-}15 A and 14{+-}6 A for 2 MeV He{sup +} and 20 MeV H{sup +} ion beams respectively. (author)}
place = {Japan}
year = {1997}
month = {Mar}
}