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Effects of ion beam irradiation on semiconductor devices

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Abstract

Energetic heavy-ion irradiation apparatus has been developed for single-event effects (SEE) testing. We have applied three irradiation methods such as a scattered-ion irradiation method, a recoiled-atom irradiation method, and a direct-beam irradiation method to perform SEE testing efficiently. (author)
Authors:
Nashiyama, Isamu; Hirao, Toshio; Itoh, Hisayoshi; Ohshima, Takeshi [1] 
  1. Japan Atomic Energy Research Inst., Takasaki, Gunma (Japan). Takasaki Radiation Chemistry Research Establishment
Publication Date:
Mar 01, 1997
Product Type:
Conference
Report Number:
JAERI-Conf-97-003; CONF-9603254-
Reference Number:
SCA: 430303; PA: JPN-97:010083; EDB-98:039930; SN: 98001890426
Resource Relation:
Conference: 7. international symposium on advanced nuclear energy research, Takasaki (Japan), 18-20 Mar 1996; Other Information: PBD: Mar 1997; Related Information: Is Part Of Recent progress in accelerator beam application. Proceedings of the 7th international symposium on advanced nuclear energy research; PB: 553 p.
Subject:
43 PARTICLE ACCELERATORS; RADIATION EFFECTS; ION BEAMS; IRRADIATION; SEMICONDUCTOR DEVICES; IRRADIATION DEVICES; IRRADIATION PROCEDURES; ACCELERATOR FACILITIES; LET; COMPARATIVE EVALUATIONS; RECOILS
OSTI ID:
588277
Research Organizations:
Japan Atomic Energy Research Inst., Tokyo (Japan)
Country of Origin:
Japan
Language:
English
Other Identifying Numbers:
Other: ON: DE97764433; TRN: JP9710083
Availability:
OSTI as DE97764433
Submitting Site:
JPN
Size:
pp. 22-25
Announcement Date:
May 08, 1998

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Citation Formats

Nashiyama, Isamu, Hirao, Toshio, Itoh, Hisayoshi, and Ohshima, Takeshi. Effects of ion beam irradiation on semiconductor devices. Japan: N. p., 1997. Web.
Nashiyama, Isamu, Hirao, Toshio, Itoh, Hisayoshi, & Ohshima, Takeshi. Effects of ion beam irradiation on semiconductor devices. Japan.
Nashiyama, Isamu, Hirao, Toshio, Itoh, Hisayoshi, and Ohshima, Takeshi. 1997. "Effects of ion beam irradiation on semiconductor devices." Japan.
@misc{etde_588277,
title = {Effects of ion beam irradiation on semiconductor devices}
 author = {Nashiyama, Isamu, Hirao, Toshio, Itoh, Hisayoshi, and Ohshima, Takeshi}
 abstractNote = {Energetic heavy-ion irradiation apparatus has been developed for single-event effects (SEE) testing. We have applied three irradiation methods such as a scattered-ion irradiation method, a recoiled-atom irradiation method, and a direct-beam irradiation method to perform SEE testing efficiently. (author)}
 place = {Japan}
 year = {1997}
 month = {Mar}
 }