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Self-supporting film method of silicon single crystal by ion implantation and it`s application

Abstract

A few {mu}m of thickness of self-supporting film of silicon single crystal was produced by the ion implantation and the selective etching. This materials are distinguished by a uniform film thickness, good controllability, crystallization and the mechanical strength. For applying it to device, the detailed process has to be established, because there are some improved problems such as pinhole and morphology on the surface. This materials are very useful to the basic experiment of the base for epitaxial growth under irradiation of ion beams and the ion beam analysis in the atmosphere. (S.Y.)
Authors:
Saito, Kazuo; Nakao, Setsuo; Niwa, Hiroaki; Miyagawa, Soji [1] 
  1. National Industrial Research Inst. of Nagoya (Japan)
Publication Date:
Dec 01, 1996
Product Type:
Conference
Report Number:
INIS-JP-078; CONF-9607207-
Reference Number:
SCA: 665300; PA: JPN-98:001262; EDB-98:041215; SN: 98001918496
Resource Relation:
Conference: 9. workshop on tandem accelerators and peripheral techniques, Tokai (Japan), 4-5 Jul 1996; Other Information: PBD: Dec 1996; Related Information: Is Part Of Proceedings of 9th workshop on tandem accelerators and peripheral techniques; PB: 119 p.; Dai-9-kai tandemu kasokuki oyobi sono shuhengijutsu no kenkyukai hokokushu
Subject:
66 PHYSICS; ION IMPLANTATION; ETCHING; THIN FILMS; SILICON; MONOCRYSTALS; THICKNESS; SURFACE PROPERTIES
OSTI ID:
588136
Country of Origin:
Japan
Language:
Japanese
Other Identifying Numbers:
Other: ON: DE98708353; TRN: JP9801262
Availability:
OSTI as DE98708353
Submitting Site:
JPN
Size:
pp. 76-79
Announcement Date:
May 08, 1998

Citation Formats

Saito, Kazuo, Nakao, Setsuo, Niwa, Hiroaki, and Miyagawa, Soji. Self-supporting film method of silicon single crystal by ion implantation and it`s application. Japan: N. p., 1996. Web.
Saito, Kazuo, Nakao, Setsuo, Niwa, Hiroaki, & Miyagawa, Soji. Self-supporting film method of silicon single crystal by ion implantation and it`s application. Japan.
Saito, Kazuo, Nakao, Setsuo, Niwa, Hiroaki, and Miyagawa, Soji. 1996. "Self-supporting film method of silicon single crystal by ion implantation and it`s application." Japan.
@misc{etde_588136,
title = {Self-supporting film method of silicon single crystal by ion implantation and it`s application}
author = {Saito, Kazuo, Nakao, Setsuo, Niwa, Hiroaki, and Miyagawa, Soji}
abstractNote = {A few {mu}m of thickness of self-supporting film of silicon single crystal was produced by the ion implantation and the selective etching. This materials are distinguished by a uniform film thickness, good controllability, crystallization and the mechanical strength. For applying it to device, the detailed process has to be established, because there are some improved problems such as pinhole and morphology on the surface. This materials are very useful to the basic experiment of the base for epitaxial growth under irradiation of ion beams and the ion beam analysis in the atmosphere. (S.Y.)}
place = {Japan}
year = {1996}
month = {Dec}
}