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Development of pulsation technique for single ion hit system

Abstract

When a high energy heavy ion enters into a substance, high density of ionization and excitement occurrs along its flying trace. Especially, when such an ion enters into a semiconductor cell, a bit inversion called single event is occurred or a phenomenon destroyed element itself on case of the worst is formed. The present semiconductor cell is made in a size of some micron square, as different from its accumulated degree. In order to analyze the single event phenomenon formed by entering ion into such fine region in detail, a technique possible enter heavy ion beam with space resolution under 1 micron to each sample is necessary. In order to develop this technique, a static type high speed beam switch for control of entering a beam into a sample and a single ion detector for detecting entrance of ion into the sample were installed to heavy ion microbeam forming apparatus. The single ion hit system in Takasaki Radiation Chemistry Research Establishment, JAERI succeeded in detection and control technique of the single ion and control of noise due to pulsization and finished development of basic technique of the single ion hit, since now. After today, it is planned to hit actually  More>>
Authors:
Sakai, Takuro; Hamano, Tsuyoshi; Hirao, Toshio; Kamiya, Tomihiro [1] 
  1. Japan Atomic Energy Research Inst., Takasaki, Gunma (Japan). Takasaki Radiation Chemistry Research Establishment
Publication Date:
Dec 01, 1996
Product Type:
Conference
Report Number:
INIS-JP-078; CONF-9607207-
Reference Number:
SCA: 440101; PA: JPN-98:001258; EDB-98:039986; SN: 98001918487
Resource Relation:
Conference: 9. workshop on tandem accelerators and peripheral techniques, Tokai (Japan), 4-5 Jul 1996; Other Information: PBD: Dec 1996; Related Information: Is Part Of Proceedings of 9th workshop on tandem accelerators and peripheral techniques; PB: 119 p.; Dai-9-kai tandemu kasokuki oyobi sono shuhengijutsu no kenkyukai hokokushu
Subject:
44 INSTRUMENTATION, INCLUDING NUCLEAR AND PARTICLE DETECTORS; IRRADIATION DEVICES; HEAVY IONS; ION BEAMS; BEAM PRODUCTION; ION DETECTION; SECONDARY EMISSION DETECTORS; ELECTRON EMISSION; FOILS; PULSE TECHNIQUES; NOISE
OSTI ID:
588128
Country of Origin:
Japan
Language:
Japanese
Other Identifying Numbers:
Other: ON: DE98708353; TRN: JP9801258
Availability:
OSTI as DE98708353
Submitting Site:
JPN
Size:
pp. 60-63
Announcement Date:

Citation Formats

Sakai, Takuro, Hamano, Tsuyoshi, Hirao, Toshio, and Kamiya, Tomihiro. Development of pulsation technique for single ion hit system. Japan: N. p., 1996. Web.
Sakai, Takuro, Hamano, Tsuyoshi, Hirao, Toshio, & Kamiya, Tomihiro. Development of pulsation technique for single ion hit system. Japan.
Sakai, Takuro, Hamano, Tsuyoshi, Hirao, Toshio, and Kamiya, Tomihiro. 1996. "Development of pulsation technique for single ion hit system." Japan.
@misc{etde_588128,
title = {Development of pulsation technique for single ion hit system}
author = {Sakai, Takuro, Hamano, Tsuyoshi, Hirao, Toshio, and Kamiya, Tomihiro}
abstractNote = {When a high energy heavy ion enters into a substance, high density of ionization and excitement occurrs along its flying trace. Especially, when such an ion enters into a semiconductor cell, a bit inversion called single event is occurred or a phenomenon destroyed element itself on case of the worst is formed. The present semiconductor cell is made in a size of some micron square, as different from its accumulated degree. In order to analyze the single event phenomenon formed by entering ion into such fine region in detail, a technique possible enter heavy ion beam with space resolution under 1 micron to each sample is necessary. In order to develop this technique, a static type high speed beam switch for control of entering a beam into a sample and a single ion detector for detecting entrance of ion into the sample were installed to heavy ion microbeam forming apparatus. The single ion hit system in Takasaki Radiation Chemistry Research Establishment, JAERI succeeded in detection and control technique of the single ion and control of noise due to pulsization and finished development of basic technique of the single ion hit, since now. After today, it is planned to hit actually the single ion onto the sample and evaluate its accuracy. (G.K.)}
place = {Japan}
year = {1996}
month = {Dec}
}