Abstract
Recent progress and future trends of power semiconductor devices (especially with respect to motor speed control) were described. Conventional discrete devices such as thyristors, bipolar transistors, unipolar transistors and Bi-MOS devices were referenced to. Reference was also made to High Voltage ICs. There has been steady progress with each of these power devices in current carrying capability, voltage blocking capability and switching speed. The Bipolar-MOS integreated device and the High Voltage IC are particularly interesting because their abilities and performances are much enhanced by skillful combination with conventional discrete devices. However, no one device meets all the needs, and it will always be necessary to select the right device for a specific task. (11 figs, 35 refs)
Citation Formats
Ikeda, Yasuhiko, and Yatsuo, Tsutomu.
Recent progress in power electronic devices.
Japan: N. p.,
1987.
Web.
Ikeda, Yasuhiko, & Yatsuo, Tsutomu.
Recent progress in power electronic devices.
Japan.
Ikeda, Yasuhiko, and Yatsuo, Tsutomu.
1987.
"Recent progress in power electronic devices."
Japan.
@misc{etde_5808993,
title = {Recent progress in power electronic devices}
author = {Ikeda, Yasuhiko, and Yatsuo, Tsutomu}
abstractNote = {Recent progress and future trends of power semiconductor devices (especially with respect to motor speed control) were described. Conventional discrete devices such as thyristors, bipolar transistors, unipolar transistors and Bi-MOS devices were referenced to. Reference was also made to High Voltage ICs. There has been steady progress with each of these power devices in current carrying capability, voltage blocking capability and switching speed. The Bipolar-MOS integreated device and the High Voltage IC are particularly interesting because their abilities and performances are much enhanced by skillful combination with conventional discrete devices. However, no one device meets all the needs, and it will always be necessary to select the right device for a specific task. (11 figs, 35 refs)}
journal = []
volume = {36:1}
journal type = {AC}
place = {Japan}
year = {1987}
month = {Feb}
}
title = {Recent progress in power electronic devices}
author = {Ikeda, Yasuhiko, and Yatsuo, Tsutomu}
abstractNote = {Recent progress and future trends of power semiconductor devices (especially with respect to motor speed control) were described. Conventional discrete devices such as thyristors, bipolar transistors, unipolar transistors and Bi-MOS devices were referenced to. Reference was also made to High Voltage ICs. There has been steady progress with each of these power devices in current carrying capability, voltage blocking capability and switching speed. The Bipolar-MOS integreated device and the High Voltage IC are particularly interesting because their abilities and performances are much enhanced by skillful combination with conventional discrete devices. However, no one device meets all the needs, and it will always be necessary to select the right device for a specific task. (11 figs, 35 refs)}
journal = []
volume = {36:1}
journal type = {AC}
place = {Japan}
year = {1987}
month = {Feb}
}