Abstract
In order to design the neutron detection system in the non-destructive assay device applying to the measurement of alpha-activity in medium or low level radioactive reprocessing wastes, we examined the property of the LiF coating semiconductor detector applying to gamma-radiation field. The sensitivity for thermal neutron of LiF coating ion implanted detector is 1.6 cps/nv, and reduced to half in about 300 R/h gamma-radiation field. Compared with the other neutron detectors, for example proportional counters, the performance of this detector is almost similar to that of them. This new detector has a merit to be possible to use a dry battery instead of a high voltage supply. (author).
Hattori, Takatoshi;
Ishii, Keiichiro
[1]
- Central Research Inst. of Electric Power Industry, Komae, Tokyo (Japan). Komae Research Lab.
Citation Formats
Hattori, Takatoshi, and Ishii, Keiichiro.
Evaluation of NDA techniques applying to the measurement of alpha-activities in medium or low level radioactive reprocessing wastes (part 5). The development of LiF coating semiconductor detector.
Japan: N. p.,
1988.
Web.
Hattori, Takatoshi, & Ishii, Keiichiro.
Evaluation of NDA techniques applying to the measurement of alpha-activities in medium or low level radioactive reprocessing wastes (part 5). The development of LiF coating semiconductor detector.
Japan.
Hattori, Takatoshi, and Ishii, Keiichiro.
1988.
"Evaluation of NDA techniques applying to the measurement of alpha-activities in medium or low level radioactive reprocessing wastes (part 5). The development of LiF coating semiconductor detector."
Japan.
@misc{etde_5694776,
title = {Evaluation of NDA techniques applying to the measurement of alpha-activities in medium or low level radioactive reprocessing wastes (part 5). The development of LiF coating semiconductor detector}
author = {Hattori, Takatoshi, and Ishii, Keiichiro}
abstractNote = {In order to design the neutron detection system in the non-destructive assay device applying to the measurement of alpha-activity in medium or low level radioactive reprocessing wastes, we examined the property of the LiF coating semiconductor detector applying to gamma-radiation field. The sensitivity for thermal neutron of LiF coating ion implanted detector is 1.6 cps/nv, and reduced to half in about 300 R/h gamma-radiation field. Compared with the other neutron detectors, for example proportional counters, the performance of this detector is almost similar to that of them. This new detector has a merit to be possible to use a dry battery instead of a high voltage supply. (author).}
journal = []
volume = {T88023}
journal type = {AC}
place = {Japan}
year = {1988}
month = {Dec}
}
title = {Evaluation of NDA techniques applying to the measurement of alpha-activities in medium or low level radioactive reprocessing wastes (part 5). The development of LiF coating semiconductor detector}
author = {Hattori, Takatoshi, and Ishii, Keiichiro}
abstractNote = {In order to design the neutron detection system in the non-destructive assay device applying to the measurement of alpha-activity in medium or low level radioactive reprocessing wastes, we examined the property of the LiF coating semiconductor detector applying to gamma-radiation field. The sensitivity for thermal neutron of LiF coating ion implanted detector is 1.6 cps/nv, and reduced to half in about 300 R/h gamma-radiation field. Compared with the other neutron detectors, for example proportional counters, the performance of this detector is almost similar to that of them. This new detector has a merit to be possible to use a dry battery instead of a high voltage supply. (author).}
journal = []
volume = {T88023}
journal type = {AC}
place = {Japan}
year = {1988}
month = {Dec}
}