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Radiation effects on JFETS, MOSFETS, and bipolar transistors, as related to SSC circuit design

Abstract

Some results of radiation effects on selected junction field-effect transistors, MOS field-effect transistors, and bipolar junction transistors are presented. The evaluations include dc parameters, as well as capacitive variations and noise evaluations. The tests are made at the low current and voltage levels (in particular at currents {<=} 1 mA) that are essential for the low-power regimes required by SSC circuitry. Detailed noise data are presented both before and after 5-Mrad (gamma) total-dose exposure. SPICE radiation models for three high-frequency bipolar processes are compared for a typical charge-sensitive preamplifier. (orig.).
Authors:
Kennedy, E J; Gray, B; Wu, A; [1]  Alley, G T; Britton, Jr, C L; [2]  Skubic, P L [3] 
  1. Dept. of Electrical and Computer Engineering, Univ. of Tennessee, Knoxville, TN (United States)
  2. Oak Ridge National Lab., TN (United States)
  3. Univ. of Oklahoma, Dept. of Physics and Astronomy, Norman, OK (United States)
Publication Date:
Oct 01, 1991
Product Type:
Journal Article
Reference Number:
AIX-23-028407; EDB-92-061248
Resource Relation:
Journal Name: Nuclear Instruments and Methods in Physics Research, Section A; (Netherlands); Journal Volume: 307:2/3
Subject:
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; TRANSISTORS; PHYSICAL RADIATION EFFECTS; BACKGROUND NOISE; CAPACITANCE; COUNTING CIRCUITS; ELECTRIC CONDUCTIVITY; FREQUENCY DEPENDENCE; GAMMA RADIATION; HZ RANGE; JUNCTION TRANSISTORS; KHZ RANGE 01-100; KHZ RANGE 100-1000; MOSFET; PREAMPLIFIERS; SUPERCONDUCTING SUPER COLLIDER; AMPLIFIERS; ELECTRICAL PROPERTIES; ELECTROMAGNETIC RADIATION; ELECTRONIC CIRCUITS; ELECTRONIC EQUIPMENT; EQUIPMENT; FIELD EFFECT TRANSISTORS; FREQUENCY RANGE; IONIZING RADIATIONS; KHZ RANGE; MOS TRANSISTORS; NOISE; PHYSICAL PROPERTIES; RADIATION EFFECTS; RADIATIONS; SEMICONDUCTOR DEVICES; STORAGE RINGS; 440200* - Radiation Effects on Instrument Components, Instruments, or Electronic Systems
OSTI ID:
5628518
Country of Origin:
Netherlands
Language:
English
Other Identifying Numbers:
Journal ID: ISSN 0168-9002; CODEN: NIMAE; Other: CNN: DE-AC05-84OR21400
Submitting Site:
NLN
Size:
Pages: 452-457
Announcement Date:

Citation Formats

Kennedy, E J, Gray, B, Wu, A, Alley, G T, Britton, Jr, C L, and Skubic, P L. Radiation effects on JFETS, MOSFETS, and bipolar transistors, as related to SSC circuit design. Netherlands: N. p., 1991. Web. doi:10.1016/0168-9002(91)90217-E.
Kennedy, E J, Gray, B, Wu, A, Alley, G T, Britton, Jr, C L, & Skubic, P L. Radiation effects on JFETS, MOSFETS, and bipolar transistors, as related to SSC circuit design. Netherlands. doi:10.1016/0168-9002(91)90217-E.
Kennedy, E J, Gray, B, Wu, A, Alley, G T, Britton, Jr, C L, and Skubic, P L. 1991. "Radiation effects on JFETS, MOSFETS, and bipolar transistors, as related to SSC circuit design." Netherlands. doi:10.1016/0168-9002(91)90217-E. https://www.osti.gov/servlets/purl/10.1016/0168-9002(91)90217-E.
@misc{etde_5628518,
title = {Radiation effects on JFETS, MOSFETS, and bipolar transistors, as related to SSC circuit design}
author = {Kennedy, E J, Gray, B, Wu, A, Alley, G T, Britton, Jr, C L, and Skubic, P L}
abstractNote = {Some results of radiation effects on selected junction field-effect transistors, MOS field-effect transistors, and bipolar junction transistors are presented. The evaluations include dc parameters, as well as capacitive variations and noise evaluations. The tests are made at the low current and voltage levels (in particular at currents {<=} 1 mA) that are essential for the low-power regimes required by SSC circuitry. Detailed noise data are presented both before and after 5-Mrad (gamma) total-dose exposure. SPICE radiation models for three high-frequency bipolar processes are compared for a typical charge-sensitive preamplifier. (orig.).}
doi = {10.1016/0168-9002(91)90217-E}
journal = {Nuclear Instruments and Methods in Physics Research, Section A; (Netherlands)}
volume = {307:2/3}
journal type = {AC}
place = {Netherlands}
year = {1991}
month = {Oct}
}