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PECVD deposition of device-quality intrinsic amorphous silicon at high growth rate

Abstract

The combined influence of RF-power density (RFP) and silane flow-rate ([Phi]) on the deposition rate of plasma-enhanced chemical vapour deposition (PECVD) intrinsic amorphous silicon has been investigated. The correlation of the results obtained from the characterisation of the material with the silane deposition efficiency, as deduced from mass spectrometry, has led to an interpretation allowing to deposit intrinsic amorphous-silicon films having an optical gap of 1.87 eV and a photoconductive ratio (ratio of ambient-temperature conductivities under 1 sun AM1 and in dark) of 6 orders of magnitude at growth rates up to 10 A/s, without any structural modification of the PECVD system used. Such results are considered of high relevance regarding industrial competitiveness. (orig.)
Authors:
Carabe, J; [1]  Gandia, J J; [1]  Gutierrez, M T [1] 
  1. Inst. de Energias Renovables, CIEMAT, Madrid (Spain)
Publication Date:
Nov 01, 1993
Product Type:
Journal Article
Reference Number:
NLF-94-0G0927; EDB-94-025715
Resource Relation:
Journal Name: Solar Energy Materials and Solar Cells; (Netherlands); Journal Volume: 31:2
Subject:
36 MATERIALS SCIENCE; 14 SOLAR ENERGY; CHEMICAL VAPOR DEPOSITION; SILICON SOLAR CELLS; AMORPHOUS STATE; EFFICIENCY; ELECTRIC CONDUCTIVITY; ENERGY GAP; INTERFACES; MASS SPECTROSCOPY; PHOTOCONDUCTIVITY; PLASMA; SILANES; SILICON; THIN FILMS; CHEMICAL COATING; DEPOSITION; DIRECT ENERGY CONVERTERS; ELECTRICAL PROPERTIES; ELEMENTS; EQUIPMENT; FILMS; HYDRIDES; HYDROGEN COMPOUNDS; ORGANIC COMPOUNDS; ORGANIC SILICON COMPOUNDS; PHOTOELECTRIC CELLS; PHOTOVOLTAIC CELLS; PHYSICAL PROPERTIES; SEMIMETALS; SILICON COMPOUNDS; SOLAR CELLS; SOLAR EQUIPMENT; SPECTROSCOPY; SURFACE COATING; 360601* - Other Materials- Preparation & Manufacture; 140501 - Solar Energy Conversion- Photovoltaic Conversion
OSTI ID:
5578625
Country of Origin:
Netherlands
Language:
English
Other Identifying Numbers:
Journal ID: ISSN 0927-0248; CODEN: SEMCEQ
Submitting Site:
NLF
Size:
Pages: 317-322
Announcement Date:

Citation Formats

Carabe, J, Gandia, J J, and Gutierrez, M T. PECVD deposition of device-quality intrinsic amorphous silicon at high growth rate. Netherlands: N. p., 1993. Web. doi:10.1016/0927-0248(93)90063-9.
Carabe, J, Gandia, J J, & Gutierrez, M T. PECVD deposition of device-quality intrinsic amorphous silicon at high growth rate. Netherlands. doi:10.1016/0927-0248(93)90063-9.
Carabe, J, Gandia, J J, and Gutierrez, M T. 1993. "PECVD deposition of device-quality intrinsic amorphous silicon at high growth rate." Netherlands. doi:10.1016/0927-0248(93)90063-9. https://www.osti.gov/servlets/purl/10.1016/0927-0248(93)90063-9.
@misc{etde_5578625,
title = {PECVD deposition of device-quality intrinsic amorphous silicon at high growth rate}
author = {Carabe, J, Gandia, J J, and Gutierrez, M T}
abstractNote = {The combined influence of RF-power density (RFP) and silane flow-rate ([Phi]) on the deposition rate of plasma-enhanced chemical vapour deposition (PECVD) intrinsic amorphous silicon has been investigated. The correlation of the results obtained from the characterisation of the material with the silane deposition efficiency, as deduced from mass spectrometry, has led to an interpretation allowing to deposit intrinsic amorphous-silicon films having an optical gap of 1.87 eV and a photoconductive ratio (ratio of ambient-temperature conductivities under 1 sun AM1 and in dark) of 6 orders of magnitude at growth rates up to 10 A/s, without any structural modification of the PECVD system used. Such results are considered of high relevance regarding industrial competitiveness. (orig.)}
doi = {10.1016/0927-0248(93)90063-9}
journal = {Solar Energy Materials and Solar Cells; (Netherlands)}
volume = {31:2}
journal type = {AC}
place = {Netherlands}
year = {1993}
month = {Nov}
}