You need JavaScript to view this

Sputtering yields of Si and Ni from the Ni sub(1-x)Si sub(x) system studied by Rutherford backscattering spectrometry

Abstract

Sputtering yields of Si and Ni from thin layer films of Ni-Si compounds (Ni sub(1-x)Si sub(x)), including the pure materials (Ni and Si), caused by 5keV Ar/sup +/ ion bombardment were investigated using backscattering spectrometry. The sputtering yield for Si from Ni sub(1-x)Si sub(x) increased with increasing Si concentration. However, there is an abrupt decrease in the yield for Si concentrations above NiSi/sub 2/ to pure Si. This is in clear contrast to the sputtering yield of Ni from Ni sub(1-x)Si sub(x) which increased with increasing Ni concentration monotonously. These results are discussed on the basis of both the difference in the atomic density and the electronic state of the alloy.
Authors:
Kim, S C; Yamaguchi, S; Kataoka, Y; Iwami, M; Hiraki, A; [1]  Satou, M; Fujimoto, F
  1. Osaka Univ., Suita (Japan). Faculty of Engineering
Publication Date:
Jan 01, 1982
Product Type:
Journal Article
Reference Number:
AIX-14-773547; EDB-83-189337
Resource Relation:
Journal Name: Jpn. J. Appl. Phys., Part 1; (Japan); Journal Volume: 21:1
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ARGON IONS; COLLISIONS; NICKEL SILICIDES; SPUTTERING; BACKSCATTERING; COMPARATIVE EVALUATIONS; ELECTRONIC STRUCTURE; KEV RANGE 01-10; NICKEL; NICKEL ALLOYS; QUANTITY RATIO; RUTHERFORD SCATTERING; SILICON; SILICON ALLOYS; SPECTROSCOPY; THIN FILMS; ALLOYS; CHARGED PARTICLES; ELASTIC SCATTERING; ELEMENTS; ENERGY RANGE; FILMS; IONS; KEV RANGE; METALS; NICKEL COMPOUNDS; SCATTERING; SEMIMETALS; SILICIDES; SILICON COMPOUNDS; TRANSITION ELEMENT COMPOUNDS; TRANSITION ELEMENTS; 640301* - Atomic, Molecular & Chemical Physics- Beams & their Reactions
OSTI ID:
5548431
Country of Origin:
Japan
Language:
English
Other Identifying Numbers:
Journal ID: CODEN: JAPND
Submitting Site:
HEDB
Size:
Pages: 39-41
Announcement Date:

Citation Formats

Kim, S C, Yamaguchi, S, Kataoka, Y, Iwami, M, Hiraki, A, Satou, M, and Fujimoto, F. Sputtering yields of Si and Ni from the Ni sub(1-x)Si sub(x) system studied by Rutherford backscattering spectrometry. Japan: N. p., 1982. Web. doi:10.1143/JJAP.21.39.
Kim, S C, Yamaguchi, S, Kataoka, Y, Iwami, M, Hiraki, A, Satou, M, & Fujimoto, F. Sputtering yields of Si and Ni from the Ni sub(1-x)Si sub(x) system studied by Rutherford backscattering spectrometry. Japan. doi:10.1143/JJAP.21.39.
Kim, S C, Yamaguchi, S, Kataoka, Y, Iwami, M, Hiraki, A, Satou, M, and Fujimoto, F. 1982. "Sputtering yields of Si and Ni from the Ni sub(1-x)Si sub(x) system studied by Rutherford backscattering spectrometry." Japan. doi:10.1143/JJAP.21.39. https://www.osti.gov/servlets/purl/10.1143/JJAP.21.39.
@misc{etde_5548431,
title = {Sputtering yields of Si and Ni from the Ni sub(1-x)Si sub(x) system studied by Rutherford backscattering spectrometry}
author = {Kim, S C, Yamaguchi, S, Kataoka, Y, Iwami, M, Hiraki, A, Satou, M, and Fujimoto, F}
abstractNote = {Sputtering yields of Si and Ni from thin layer films of Ni-Si compounds (Ni sub(1-x)Si sub(x)), including the pure materials (Ni and Si), caused by 5keV Ar/sup +/ ion bombardment were investigated using backscattering spectrometry. The sputtering yield for Si from Ni sub(1-x)Si sub(x) increased with increasing Si concentration. However, there is an abrupt decrease in the yield for Si concentrations above NiSi/sub 2/ to pure Si. This is in clear contrast to the sputtering yield of Ni from Ni sub(1-x)Si sub(x) which increased with increasing Ni concentration monotonously. These results are discussed on the basis of both the difference in the atomic density and the electronic state of the alloy.}
doi = {10.1143/JJAP.21.39}
journal = {Jpn. J. Appl. Phys., Part 1; (Japan)}
volume = {21:1}
journal type = {AC}
place = {Japan}
year = {1982}
month = {Jan}
}