Abstract
Sputtering yields of Si and Ni from thin layer films of Ni-Si compounds (Ni sub(1-x)Si sub(x)), including the pure materials (Ni and Si), caused by 5keV Ar/sup +/ ion bombardment were investigated using backscattering spectrometry. The sputtering yield for Si from Ni sub(1-x)Si sub(x) increased with increasing Si concentration. However, there is an abrupt decrease in the yield for Si concentrations above NiSi/sub 2/ to pure Si. This is in clear contrast to the sputtering yield of Ni from Ni sub(1-x)Si sub(x) which increased with increasing Ni concentration monotonously. These results are discussed on the basis of both the difference in the atomic density and the electronic state of the alloy.
Kim, S C;
Yamaguchi, S;
Kataoka, Y;
Iwami, M;
Hiraki, A;
[1]
Satou, M;
Fujimoto, F
- Osaka Univ., Suita (Japan). Faculty of Engineering
Citation Formats
Kim, S C, Yamaguchi, S, Kataoka, Y, Iwami, M, Hiraki, A, Satou, M, and Fujimoto, F.
Sputtering yields of Si and Ni from the Ni sub(1-x)Si sub(x) system studied by Rutherford backscattering spectrometry.
Japan: N. p.,
1982.
Web.
doi:10.1143/JJAP.21.39.
Kim, S C, Yamaguchi, S, Kataoka, Y, Iwami, M, Hiraki, A, Satou, M, & Fujimoto, F.
Sputtering yields of Si and Ni from the Ni sub(1-x)Si sub(x) system studied by Rutherford backscattering spectrometry.
Japan.
doi:10.1143/JJAP.21.39.
Kim, S C, Yamaguchi, S, Kataoka, Y, Iwami, M, Hiraki, A, Satou, M, and Fujimoto, F.
1982.
"Sputtering yields of Si and Ni from the Ni sub(1-x)Si sub(x) system studied by Rutherford backscattering spectrometry."
Japan.
doi:10.1143/JJAP.21.39.
https://www.osti.gov/servlets/purl/10.1143/JJAP.21.39.
@misc{etde_5548431,
title = {Sputtering yields of Si and Ni from the Ni sub(1-x)Si sub(x) system studied by Rutherford backscattering spectrometry}
author = {Kim, S C, Yamaguchi, S, Kataoka, Y, Iwami, M, Hiraki, A, Satou, M, and Fujimoto, F}
abstractNote = {Sputtering yields of Si and Ni from thin layer films of Ni-Si compounds (Ni sub(1-x)Si sub(x)), including the pure materials (Ni and Si), caused by 5keV Ar/sup +/ ion bombardment were investigated using backscattering spectrometry. The sputtering yield for Si from Ni sub(1-x)Si sub(x) increased with increasing Si concentration. However, there is an abrupt decrease in the yield for Si concentrations above NiSi/sub 2/ to pure Si. This is in clear contrast to the sputtering yield of Ni from Ni sub(1-x)Si sub(x) which increased with increasing Ni concentration monotonously. These results are discussed on the basis of both the difference in the atomic density and the electronic state of the alloy.}
doi = {10.1143/JJAP.21.39}
journal = {Jpn. J. Appl. Phys., Part 1; (Japan)}
volume = {21:1}
journal type = {AC}
place = {Japan}
year = {1982}
month = {Jan}
}
title = {Sputtering yields of Si and Ni from the Ni sub(1-x)Si sub(x) system studied by Rutherford backscattering spectrometry}
author = {Kim, S C, Yamaguchi, S, Kataoka, Y, Iwami, M, Hiraki, A, Satou, M, and Fujimoto, F}
abstractNote = {Sputtering yields of Si and Ni from thin layer films of Ni-Si compounds (Ni sub(1-x)Si sub(x)), including the pure materials (Ni and Si), caused by 5keV Ar/sup +/ ion bombardment were investigated using backscattering spectrometry. The sputtering yield for Si from Ni sub(1-x)Si sub(x) increased with increasing Si concentration. However, there is an abrupt decrease in the yield for Si concentrations above NiSi/sub 2/ to pure Si. This is in clear contrast to the sputtering yield of Ni from Ni sub(1-x)Si sub(x) which increased with increasing Ni concentration monotonously. These results are discussed on the basis of both the difference in the atomic density and the electronic state of the alloy.}
doi = {10.1143/JJAP.21.39}
journal = {Jpn. J. Appl. Phys., Part 1; (Japan)}
volume = {21:1}
journal type = {AC}
place = {Japan}
year = {1982}
month = {Jan}
}