Abstract
Sputtered and evaporated optical Ge films are investigated using electron microscopy and diffraction, total integrated scattering, infrared reflection absorption spectroscopy. Auger electron spectroscopy, and optical transmission measurements to observe differences of the chemical composition, atomic structure, morphology, optical constants, and degradation in relation to the parameters of technology during preparation. (orig.).
Schirmer, G;
Duparre, A;
Heerdegen, W;
Kuehn, H J;
Lehmann, A;
Richter, W;
Schroeter, B;
[1]
Hacker, E;
Meyer, J
[2]
- Dept. of Physics, Friedrich-Schiller Univ., Jena (Germany, F.R.)
- Jenaoptik GmbH Carl Zeiss, Jena (Germany, F.R.)
Citation Formats
Schirmer, G, Duparre, A, Heerdegen, W, Kuehn, H J, Lehmann, A, Richter, W, Schroeter, B, Hacker, E, and Meyer, J.
Properties of thin optical Ge films related to their technology dependent structure.
Germany: N. p.,
1991.
Web.
doi:10.1002/pssa.2211240119.
Schirmer, G, Duparre, A, Heerdegen, W, Kuehn, H J, Lehmann, A, Richter, W, Schroeter, B, Hacker, E, & Meyer, J.
Properties of thin optical Ge films related to their technology dependent structure.
Germany.
https://doi.org/10.1002/pssa.2211240119
Schirmer, G, Duparre, A, Heerdegen, W, Kuehn, H J, Lehmann, A, Richter, W, Schroeter, B, Hacker, E, and Meyer, J.
1991.
"Properties of thin optical Ge films related to their technology dependent structure."
Germany.
https://doi.org/10.1002/pssa.2211240119.
@misc{etde_5487506,
title = {Properties of thin optical Ge films related to their technology dependent structure}
author = {Schirmer, G, Duparre, A, Heerdegen, W, Kuehn, H J, Lehmann, A, Richter, W, Schroeter, B, Hacker, E, and Meyer, J}
abstractNote = {Sputtered and evaporated optical Ge films are investigated using electron microscopy and diffraction, total integrated scattering, infrared reflection absorption spectroscopy. Auger electron spectroscopy, and optical transmission measurements to observe differences of the chemical composition, atomic structure, morphology, optical constants, and degradation in relation to the parameters of technology during preparation. (orig.).}
doi = {10.1002/pssa.2211240119}
journal = []
volume = {124:1}
journal type = {AC}
place = {Germany}
year = {1991}
month = {Mar}
}
title = {Properties of thin optical Ge films related to their technology dependent structure}
author = {Schirmer, G, Duparre, A, Heerdegen, W, Kuehn, H J, Lehmann, A, Richter, W, Schroeter, B, Hacker, E, and Meyer, J}
abstractNote = {Sputtered and evaporated optical Ge films are investigated using electron microscopy and diffraction, total integrated scattering, infrared reflection absorption spectroscopy. Auger electron spectroscopy, and optical transmission measurements to observe differences of the chemical composition, atomic structure, morphology, optical constants, and degradation in relation to the parameters of technology during preparation. (orig.).}
doi = {10.1002/pssa.2211240119}
journal = []
volume = {124:1}
journal type = {AC}
place = {Germany}
year = {1991}
month = {Mar}
}