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Properties of thin optical Ge films related to their technology dependent structure

Journal Article:

Abstract

Sputtered and evaporated optical Ge films are investigated using electron microscopy and diffraction, total integrated scattering, infrared reflection absorption spectroscopy. Auger electron spectroscopy, and optical transmission measurements to observe differences of the chemical composition, atomic structure, morphology, optical constants, and degradation in relation to the parameters of technology during preparation. (orig.).
Authors:
Schirmer, G; Duparre, A; Heerdegen, W; Kuehn, H J; Lehmann, A; Richter, W; Schroeter, B; [1]  Hacker, E; Meyer, J [2] 
  1. Dept. of Physics, Friedrich-Schiller Univ., Jena (Germany, F.R.)
  2. Jenaoptik GmbH Carl Zeiss, Jena (Germany, F.R.)
Publication Date:
Mar 16, 1991
Product Type:
Journal Article
Reference Number:
DE-91-006429; EDB-91-109302
Resource Relation:
Journal Name: Physica Status Solidi A (Applied Research); (German Democratic Republic); Journal Volume: 124:1
Subject:
36 MATERIALS SCIENCE; GERMANIUM; THIN FILMS; ABSORPTION SPECTRA; ABSORPTION SPECTROSCOPY; AUGER ELECTRON SPECTROSCOPY; ELECTRON DIFFRACTION; INFRARED SPECTRA; MORPHOLOGY; SPUTTERING; TRANSMISSION ELECTRON MICROSCOPY; COHERENT SCATTERING; DIFFRACTION; ELECTRON MICROSCOPY; ELECTRON SPECTROSCOPY; ELEMENTS; FILMS; METALS; MICROSCOPY; SCATTERING; SPECTRA; SPECTROSCOPY; 360603* - Materials- Properties
OSTI ID:
5487506
Country of Origin:
Germany
Language:
English
Other Identifying Numbers:
Journal ID: ISSN 0031-8965; CODEN: PSSAB
Submitting Site:
DE
Size:
Pages: 199-210
Announcement Date:

Journal Article:

Citation Formats

Schirmer, G, Duparre, A, Heerdegen, W, Kuehn, H J, Lehmann, A, Richter, W, Schroeter, B, Hacker, E, and Meyer, J. Properties of thin optical Ge films related to their technology dependent structure. Germany: N. p., 1991. Web. doi:10.1002/pssa.2211240119.
Schirmer, G, Duparre, A, Heerdegen, W, Kuehn, H J, Lehmann, A, Richter, W, Schroeter, B, Hacker, E, & Meyer, J. Properties of thin optical Ge films related to their technology dependent structure. Germany. doi:10.1002/pssa.2211240119.
Schirmer, G, Duparre, A, Heerdegen, W, Kuehn, H J, Lehmann, A, Richter, W, Schroeter, B, Hacker, E, and Meyer, J. 1991. "Properties of thin optical Ge films related to their technology dependent structure." Germany. doi:10.1002/pssa.2211240119. https://www.osti.gov/servlets/purl/10.1002/pssa.2211240119.
@misc{etde_5487506,
title = {Properties of thin optical Ge films related to their technology dependent structure}
author = {Schirmer, G, Duparre, A, Heerdegen, W, Kuehn, H J, Lehmann, A, Richter, W, Schroeter, B, Hacker, E, and Meyer, J}
abstractNote = {Sputtered and evaporated optical Ge films are investigated using electron microscopy and diffraction, total integrated scattering, infrared reflection absorption spectroscopy. Auger electron spectroscopy, and optical transmission measurements to observe differences of the chemical composition, atomic structure, morphology, optical constants, and degradation in relation to the parameters of technology during preparation. (orig.).}
doi = {10.1002/pssa.2211240119}
journal = {Physica Status Solidi A (Applied Research); (German Democratic Republic)}
volume = {124:1}
journal type = {AC}
place = {Germany}
year = {1991}
month = {Mar}
}