Abstract
Cross sections of single reversible failures in the logic state of memory cells irradiated with 1 GeV energy protons are measured. It is found that the failure cross section does not depend on the beam intensity on the absorbed dose and on the source logic state of the memory cells.
Ageev, S V
[1]
- and others
Citation Formats
Ageev, S V.
Generation of single failures in memory devices irradiated by 1 GeV protons; Generatsiya edinichnykh sboev v ustrojstvakh pamyati, obluchaemykh protonami s ehnergiej 1 GehV.
Russian Federation: N. p.,
1993.
Web.
Ageev, S V.
Generation of single failures in memory devices irradiated by 1 GeV protons; Generatsiya edinichnykh sboev v ustrojstvakh pamyati, obluchaemykh protonami s ehnergiej 1 GehV.
Russian Federation.
Ageev, S V.
1993.
"Generation of single failures in memory devices irradiated by 1 GeV protons; Generatsiya edinichnykh sboev v ustrojstvakh pamyati, obluchaemykh protonami s ehnergiej 1 GehV."
Russian Federation.
@misc{etde_546429,
title = {Generation of single failures in memory devices irradiated by 1 GeV protons; Generatsiya edinichnykh sboev v ustrojstvakh pamyati, obluchaemykh protonami s ehnergiej 1 GehV}
author = {Ageev, S V}
abstractNote = {Cross sections of single reversible failures in the logic state of memory cells irradiated with 1 GeV energy protons are measured. It is found that the failure cross section does not depend on the beam intensity on the absorbed dose and on the source logic state of the memory cells.}
place = {Russian Federation}
year = {1993}
month = {Dec}
}
title = {Generation of single failures in memory devices irradiated by 1 GeV protons; Generatsiya edinichnykh sboev v ustrojstvakh pamyati, obluchaemykh protonami s ehnergiej 1 GehV}
author = {Ageev, S V}
abstractNote = {Cross sections of single reversible failures in the logic state of memory cells irradiated with 1 GeV energy protons are measured. It is found that the failure cross section does not depend on the beam intensity on the absorbed dose and on the source logic state of the memory cells.}
place = {Russian Federation}
year = {1993}
month = {Dec}
}