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ETDEWEB   /       /    Determination of parameters of the Gummel-Pun model of bipolar transistors with account of Kirk effect and ionizing radiation effects; Opredelenie parametrov modeli Gummelya-Puna bipolyarnykh tranzistiorov s uchetom ehffekta Kirka i vozdejstviya ioniziruyushchego izlucheniya

Determination of parameters of the Gummel-Pun model of bipolar transistors with account of Kirk effect and ionizing radiation effects; Opredelenie parametrov modeli Gummelya-Puna bipolyarnykh tranzistiorov s uchetom ehffekta Kirka i vozdejstviya ioniziruyushchego izlucheniya

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Abstract

Gamma radiation effect on the parameters Gummel-Pun model n-p-n transistors with different resistance of the collector layer is investigated. A method for their determination on the base of vol-ampere characteristics is proposed.
Authors:
Ragozin, A Yu [1] 
  1. and others
Publication Date:
Dec 31, 1993
Product Type:
Miscellaneous
Report Number:
INIS-RU-430
Reference Number:
SCA: 440200; PA: AIX-28:076649; EDB-97:146115; SN: 97001880904
Resource Relation:
Other Information: PBD: 1993; Related Information: Is Part Of Problems of nuclear science and technology. Scientific-technical collection; Chernov, V.M. [ed.]; PB: 139 p.; Voprosy atomnoj nauki i tekhniki. Nauchno-tekhnicheskij sbornik; Fizika radiatsionnogo vozdejstviya na radioehlektronnuyu apparaturu
Subject:
44 INSTRUMENTATION, INCLUDING NUCLEAR AND PARTICLE DETECTORS; JUNCTION TRANSISTORS; GAIN; PHYSICAL RADIATION EFFECTS; REGRESSION ANALYSIS
OSTI ID:
546426
Research Organizations:
Ministerstvo Atomnoj Ehnergetiki Rossijskoj Federatsii, Moscow (Russian Federation); Tsentral`nyj Nauchno-Issledovatel`skij Inst. Upravleniya, Ehkonomiki i Informatsii, Moscow (Russian Federation)
Country of Origin:
Russian Federation
Language:
Russian
Other Identifying Numbers:
Other: ON: DE98603670; TRN: RU9710203076649
Availability:
INIS; OSTI as DE98603670
Submitting Site:
INIS
Size:
pp. 81-87
Announcement Date:
Dec 10, 1997

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Citation Formats

Ragozin, A Yu. Determination of parameters of the Gummel-Pun model of bipolar transistors with account of Kirk effect and ionizing radiation effects; Opredelenie parametrov modeli Gummelya-Puna bipolyarnykh tranzistiorov s uchetom ehffekta Kirka i vozdejstviya ioniziruyushchego izlucheniya. Russian Federation: N. p., 1993. Web.
Ragozin, A Yu. Determination of parameters of the Gummel-Pun model of bipolar transistors with account of Kirk effect and ionizing radiation effects; Opredelenie parametrov modeli Gummelya-Puna bipolyarnykh tranzistiorov s uchetom ehffekta Kirka i vozdejstviya ioniziruyushchego izlucheniya. Russian Federation.
Ragozin, A Yu. 1993. "Determination of parameters of the Gummel-Pun model of bipolar transistors with account of Kirk effect and ionizing radiation effects; Opredelenie parametrov modeli Gummelya-Puna bipolyarnykh tranzistiorov s uchetom ehffekta Kirka i vozdejstviya ioniziruyushchego izlucheniya." Russian Federation.
@misc{etde_546426,
title = {Determination of parameters of the Gummel-Pun model of bipolar transistors with account of Kirk effect and ionizing radiation effects; Opredelenie parametrov modeli Gummelya-Puna bipolyarnykh tranzistiorov s uchetom ehffekta Kirka i vozdejstviya ioniziruyushchego izlucheniya}
 author = {Ragozin, A Yu}
 abstractNote = {Gamma radiation effect on the parameters Gummel-Pun model n-p-n transistors with different resistance of the collector layer is investigated. A method for their determination on the base of vol-ampere characteristics is proposed.}
 place = {Russian Federation}
 year = {1993}
 month = {Dec}
 }