Abstract
Analysis of the method of forecasting the threshold strain degradation during active functioning of MOST using ionizing radiation is conducted. Problems of practical application of the method and its modification for determining the MOST working capacity under low-intensity radiation effect are discussed.
Citation Formats
Pershenkov, V S, and Cheredko, S V.
Using the hot carrier injection into sub gate oxide and the x-radiation effect for forecasting the working capacity of MOS-technology microcircuits; Ispol`zovanie inzhektsii goryachikh nositelej v podzatvornyj okisel i vozdejstvii rentgenovskogo izlucheniya dlya prognozirovaniya mikroskhem, izgotovlennykh po MOP-tekhnologii.
Russian Federation: N. p.,
1993.
Web.
Pershenkov, V S, & Cheredko, S V.
Using the hot carrier injection into sub gate oxide and the x-radiation effect for forecasting the working capacity of MOS-technology microcircuits; Ispol`zovanie inzhektsii goryachikh nositelej v podzatvornyj okisel i vozdejstvii rentgenovskogo izlucheniya dlya prognozirovaniya mikroskhem, izgotovlennykh po MOP-tekhnologii.
Russian Federation.
Pershenkov, V S, and Cheredko, S V.
1993.
"Using the hot carrier injection into sub gate oxide and the x-radiation effect for forecasting the working capacity of MOS-technology microcircuits; Ispol`zovanie inzhektsii goryachikh nositelej v podzatvornyj okisel i vozdejstvii rentgenovskogo izlucheniya dlya prognozirovaniya mikroskhem, izgotovlennykh po MOP-tekhnologii."
Russian Federation.
@misc{etde_546423,
title = {Using the hot carrier injection into sub gate oxide and the x-radiation effect for forecasting the working capacity of MOS-technology microcircuits; Ispol`zovanie inzhektsii goryachikh nositelej v podzatvornyj okisel i vozdejstvii rentgenovskogo izlucheniya dlya prognozirovaniya mikroskhem, izgotovlennykh po MOP-tekhnologii}
author = {Pershenkov, V S, and Cheredko, S V}
abstractNote = {Analysis of the method of forecasting the threshold strain degradation during active functioning of MOST using ionizing radiation is conducted. Problems of practical application of the method and its modification for determining the MOST working capacity under low-intensity radiation effect are discussed.}
place = {Russian Federation}
year = {1993}
month = {Dec}
}
title = {Using the hot carrier injection into sub gate oxide and the x-radiation effect for forecasting the working capacity of MOS-technology microcircuits; Ispol`zovanie inzhektsii goryachikh nositelej v podzatvornyj okisel i vozdejstvii rentgenovskogo izlucheniya dlya prognozirovaniya mikroskhem, izgotovlennykh po MOP-tekhnologii}
author = {Pershenkov, V S, and Cheredko, S V}
abstractNote = {Analysis of the method of forecasting the threshold strain degradation during active functioning of MOST using ionizing radiation is conducted. Problems of practical application of the method and its modification for determining the MOST working capacity under low-intensity radiation effect are discussed.}
place = {Russian Federation}
year = {1993}
month = {Dec}
}