Abstract
The experiment conducted has confirmed that independent of dose rate under which irradiation is performed the change of threshold strain of MOS-transistors during long term annealing is described by a universal curve, its parameters being determined and electric mode of transistors operation.
Citation Formats
Verkhoturov, V I, Grafodatskij, O S, Zykov, V M, and Yunda, N T.
Radiation-stimulated degradation of CMOS devices in active electric regime; Radiatsionno-stimulirovannaya degradatsiya KMOP-priborov v aktivnom ehlektricheskom rezhime.
Russian Federation: N. p.,
1993.
Web.
Verkhoturov, V I, Grafodatskij, O S, Zykov, V M, & Yunda, N T.
Radiation-stimulated degradation of CMOS devices in active electric regime; Radiatsionno-stimulirovannaya degradatsiya KMOP-priborov v aktivnom ehlektricheskom rezhime.
Russian Federation.
Verkhoturov, V I, Grafodatskij, O S, Zykov, V M, and Yunda, N T.
1993.
"Radiation-stimulated degradation of CMOS devices in active electric regime; Radiatsionno-stimulirovannaya degradatsiya KMOP-priborov v aktivnom ehlektricheskom rezhime."
Russian Federation.
@misc{etde_546416,
title = {Radiation-stimulated degradation of CMOS devices in active electric regime; Radiatsionno-stimulirovannaya degradatsiya KMOP-priborov v aktivnom ehlektricheskom rezhime}
author = {Verkhoturov, V I, Grafodatskij, O S, Zykov, V M, and Yunda, N T}
abstractNote = {The experiment conducted has confirmed that independent of dose rate under which irradiation is performed the change of threshold strain of MOS-transistors during long term annealing is described by a universal curve, its parameters being determined and electric mode of transistors operation.}
place = {Russian Federation}
year = {1993}
month = {Dec}
}
title = {Radiation-stimulated degradation of CMOS devices in active electric regime; Radiatsionno-stimulirovannaya degradatsiya KMOP-priborov v aktivnom ehlektricheskom rezhime}
author = {Verkhoturov, V I, Grafodatskij, O S, Zykov, V M, and Yunda, N T}
abstractNote = {The experiment conducted has confirmed that independent of dose rate under which irradiation is performed the change of threshold strain of MOS-transistors during long term annealing is described by a universal curve, its parameters being determined and electric mode of transistors operation.}
place = {Russian Federation}
year = {1993}
month = {Dec}
}