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Optical and electrical properties of heterostructures Zn{sub 1-x}Mg{sub x}Se crystallized on ZnTe and GaAs crystals by MBE method; Wlasnosci optyczne i elektryczne heterostruktur Zn{sub 1-x}Mg{sub x}Se krystalizowanych metoda MBE w krysztalach ZnTe i GaAs

Miscellaneous:

Abstract

Triple component mixing crystals Zn{sub 1-x}Mg{sub x}Se have been crystallized on ZnTe and GaAs monocrystals by means of molecular beam epitaxy method. The optical and electrical properties of such structures with different magnesium content have been studied. The applicability for optoelectronial and light-pipe use have been discussed as well. 6 refs, 4 figs.
Authors:
Gapinski, A; Glowacki, G; Bala, W [1] 
  1. Uniwersytet Mikolaja Kopernika, Torun (Poland). Inst. Fizyki
Publication Date:
Dec 01, 1997
Product Type:
Miscellaneous
Report Number:
CONF-9705208-
Reference Number:
SCA: 360606; PA: AIX-28:072767; EDB-97:145240; SN: 97001878463
Resource Relation:
Conference: 6. scientific conference on electronic technology, 6. Konferencja Naukowa Technologia Elektronowa, Krynica (Poland), 6-9 May 1997; Other Information: PBD: 1997; Related Information: Is Part Of Materials of 6. Scientific Conference on Electronic Technology. Vol. 2; PB: [1506] p.; Materialy 6. Konferencji Naukowej Technologia Elektronowa. T. 2
Subject:
36 MATERIALS SCIENCE; GALLIUM ARSENIDES; SUBSTRATES; MAGNESIUM COMPOUNDS; ELECTRICAL PROPERTIES; MOLECULAR BEAM EPITAXY; OPTICAL PROPERTIES; SELENIDES; ZINC SELENIDES; ZINC TELLURIDES; MEETINGS
OSTI ID:
545631
Research Organizations:
Akademia Gorniczo-Hutnicza, Cracow (Poland)
Country of Origin:
Poland
Language:
Polish
Other Identifying Numbers:
Other: CNN: KBN project no. PBZ-101-01.03; TRN: PL9702555072767
Availability:
Available from Akademia Gorniczo-Hutnicza, Mickiewicza 30, 30-059 Cracow, Poland
Submitting Site:
PLN
Size:
pp. 546-549
Announcement Date:

Miscellaneous:

Citation Formats

Gapinski, A, Glowacki, G, and Bala, W. Optical and electrical properties of heterostructures Zn{sub 1-x}Mg{sub x}Se crystallized on ZnTe and GaAs crystals by MBE method; Wlasnosci optyczne i elektryczne heterostruktur Zn{sub 1-x}Mg{sub x}Se krystalizowanych metoda MBE w krysztalach ZnTe i GaAs. Poland: N. p., 1997. Web.
Gapinski, A, Glowacki, G, & Bala, W. Optical and electrical properties of heterostructures Zn{sub 1-x}Mg{sub x}Se crystallized on ZnTe and GaAs crystals by MBE method; Wlasnosci optyczne i elektryczne heterostruktur Zn{sub 1-x}Mg{sub x}Se krystalizowanych metoda MBE w krysztalach ZnTe i GaAs. Poland.
Gapinski, A, Glowacki, G, and Bala, W. 1997. "Optical and electrical properties of heterostructures Zn{sub 1-x}Mg{sub x}Se crystallized on ZnTe and GaAs crystals by MBE method; Wlasnosci optyczne i elektryczne heterostruktur Zn{sub 1-x}Mg{sub x}Se krystalizowanych metoda MBE w krysztalach ZnTe i GaAs." Poland.
@misc{etde_545631,
title = {Optical and electrical properties of heterostructures Zn{sub 1-x}Mg{sub x}Se crystallized on ZnTe and GaAs crystals by MBE method; Wlasnosci optyczne i elektryczne heterostruktur Zn{sub 1-x}Mg{sub x}Se krystalizowanych metoda MBE w krysztalach ZnTe i GaAs}
author = {Gapinski, A, Glowacki, G, and Bala, W}
abstractNote = {Triple component mixing crystals Zn{sub 1-x}Mg{sub x}Se have been crystallized on ZnTe and GaAs monocrystals by means of molecular beam epitaxy method. The optical and electrical properties of such structures with different magnesium content have been studied. The applicability for optoelectronial and light-pipe use have been discussed as well. 6 refs, 4 figs.}
place = {Poland}
year = {1997}
month = {Dec}
}