Abstract
Tin selenide thin films were prepared by encapsulated selenization. A stacked layer of evaporated Sn and Se films were annealed in a carbon block at temperatures 100 - 500 degree Celsius for 3 hours. X-ray analysis and SEM (Scanning electron) micrograph results showed that SnSe was initially formed at 150 degree Celsius with crystal size 30.0 nm and reached optimum formation at 200 daximum of 57.4 % yield of 5-decene. Other factors such as reaction temperatures, types of solvent and wt% of rhenium loadings influence the activity of the catalytic system.
Sabar, D Hutagalung;
[1]
Sakrani, Samsudi;
Wahab, Yussof
[2]
- Universitas Sumatera Utara, Medan (Indonesia). Dept. of Physics
- Universiti Teknologi Malaysia, Skudai, Johor Bahru (Malaysia). Dept. of Physics
Citation Formats
Sabar, D Hutagalung, Sakrani, Samsudi, and Wahab, Yussof.
Preparation of SnSe thin films by encapsulated selenization; Saput tipis SnSe disediakan dengan kaedah penselenidan tertudung-tebat.
Malaysia: N. p.,
1994.
Web.
Sabar, D Hutagalung, Sakrani, Samsudi, & Wahab, Yussof.
Preparation of SnSe thin films by encapsulated selenization; Saput tipis SnSe disediakan dengan kaedah penselenidan tertudung-tebat.
Malaysia.
Sabar, D Hutagalung, Sakrani, Samsudi, and Wahab, Yussof.
1994.
"Preparation of SnSe thin films by encapsulated selenization; Saput tipis SnSe disediakan dengan kaedah penselenidan tertudung-tebat."
Malaysia.
@misc{etde_536717,
title = {Preparation of SnSe thin films by encapsulated selenization; Saput tipis SnSe disediakan dengan kaedah penselenidan tertudung-tebat}
author = {Sabar, D Hutagalung, Sakrani, Samsudi, and Wahab, Yussof}
abstractNote = {Tin selenide thin films were prepared by encapsulated selenization. A stacked layer of evaporated Sn and Se films were annealed in a carbon block at temperatures 100 - 500 degree Celsius for 3 hours. X-ray analysis and SEM (Scanning electron) micrograph results showed that SnSe was initially formed at 150 degree Celsius with crystal size 30.0 nm and reached optimum formation at 200 daximum of 57.4 % yield of 5-decene. Other factors such as reaction temperatures, types of solvent and wt% of rhenium loadings influence the activity of the catalytic system.}
place = {Malaysia}
year = {1994}
month = {Dec}
}
title = {Preparation of SnSe thin films by encapsulated selenization; Saput tipis SnSe disediakan dengan kaedah penselenidan tertudung-tebat}
author = {Sabar, D Hutagalung, Sakrani, Samsudi, and Wahab, Yussof}
abstractNote = {Tin selenide thin films were prepared by encapsulated selenization. A stacked layer of evaporated Sn and Se films were annealed in a carbon block at temperatures 100 - 500 degree Celsius for 3 hours. X-ray analysis and SEM (Scanning electron) micrograph results showed that SnSe was initially formed at 150 degree Celsius with crystal size 30.0 nm and reached optimum formation at 200 daximum of 57.4 % yield of 5-decene. Other factors such as reaction temperatures, types of solvent and wt% of rhenium loadings influence the activity of the catalytic system.}
place = {Malaysia}
year = {1994}
month = {Dec}
}