Abstract
Measurements of the energy response of a passivated implanted planar silicon (PIPS) detector for a variety of ions at low energies are presented. Such measurements are needed for the calibration of a PIPS detector used in a space borne time-of-flight mass spectrometer. Comparisons to similar measurements with state of the art silicon surface barrier (SSB) detectors show a weaker energy response and a much lower noise level of the PIPS detector. A dependence of the energy response on the incident angle of the ions was observed which is attributed to channeling of ions within the silicon crystal of the detector. (orig.)
Oetliker, M
[1]
- Physikalisches Inst., Univ. Bern (Switzerland)
Citation Formats
Oetliker, M.
Response of a passivated implanted planar silicon (PIPS) detector for heavy ions with energies between 25 and 360 keV.
Netherlands: N. p.,
1993.
Web.
doi:10.1016/0168-9002(93)91147-F.
Oetliker, M.
Response of a passivated implanted planar silicon (PIPS) detector for heavy ions with energies between 25 and 360 keV.
Netherlands.
https://doi.org/10.1016/0168-9002(93)91147-F
Oetliker, M.
1993.
"Response of a passivated implanted planar silicon (PIPS) detector for heavy ions with energies between 25 and 360 keV."
Netherlands.
https://doi.org/10.1016/0168-9002(93)91147-F.
@misc{etde_5300659,
title = {Response of a passivated implanted planar silicon (PIPS) detector for heavy ions with energies between 25 and 360 keV}
author = {Oetliker, M}
abstractNote = {Measurements of the energy response of a passivated implanted planar silicon (PIPS) detector for a variety of ions at low energies are presented. Such measurements are needed for the calibration of a PIPS detector used in a space borne time-of-flight mass spectrometer. Comparisons to similar measurements with state of the art silicon surface barrier (SSB) detectors show a weaker energy response and a much lower noise level of the PIPS detector. A dependence of the energy response on the incident angle of the ions was observed which is attributed to channeling of ions within the silicon crystal of the detector. (orig.)}
doi = {10.1016/0168-9002(93)91147-F}
journal = []
volume = {337:1}
journal type = {AC}
place = {Netherlands}
year = {1993}
month = {Dec}
}
title = {Response of a passivated implanted planar silicon (PIPS) detector for heavy ions with energies between 25 and 360 keV}
author = {Oetliker, M}
abstractNote = {Measurements of the energy response of a passivated implanted planar silicon (PIPS) detector for a variety of ions at low energies are presented. Such measurements are needed for the calibration of a PIPS detector used in a space borne time-of-flight mass spectrometer. Comparisons to similar measurements with state of the art silicon surface barrier (SSB) detectors show a weaker energy response and a much lower noise level of the PIPS detector. A dependence of the energy response on the incident angle of the ions was observed which is attributed to channeling of ions within the silicon crystal of the detector. (orig.)}
doi = {10.1016/0168-9002(93)91147-F}
journal = []
volume = {337:1}
journal type = {AC}
place = {Netherlands}
year = {1993}
month = {Dec}
}