Abstract
using technique of capacity temperature dependence (CTD) are given. Radiation dose varied from 4.8x10{sup 17} up to 1.7x10{sup 18} cm{sup -2}. CTD technique is shown to be successfully applied to investigate into defect formation at irradiation of highly compensated silicon. Rate of admission of Ec-0.40 eV deep acceptor levels in n-Si at pulsed electron irradiation does not depend on fine impurity cocentration. Positions of energy levels of deep acceptors introduced into n-Si do not coincide and constitute, respectively, E{sub c}-0.40 and E{sub c}-049 eV.
Citation Formats
title = {Parameters of compensating centers in n-type Si highly compensated by irradiation. Parametry kompensiruyushchikh tsentrov v n-Si sil'no kompensirovannym oblucheniem}
author = {Klinger, P M, and Fistul', V I}
abstractNote = {Resuls of investigations into effect of {gamma}- and neutron irradiation on defect formation in high-ohmic n-Si
using technique of capacity temperature dependence (CTD) are given. Radiation dose varied from 4.8x10{sup 17} up to 1.7x10{sup 18} cm{sup -2}. CTD technique is shown to be successfully applied to investigate into defect formation at irradiation of highly compensated silicon. Rate of admission of Ec-0.40 eV deep acceptor levels in n-Si at pulsed electron irradiation does not depend on fine impurity cocentration. Positions of energy levels of deep acceptors introduced into n-Si do not coincide and constitute, respectively, E{sub c}-0.40 and E{sub c}-049 eV.}
journal = []
volume = {24:6}
journal type = {AC}
place = {USSR}
year = {1990}
month = {Jun}
}