Abstract
The nucleation of CVD diamond is a complicated process, governed by many interrelated parameters. In the present work we attempt to elucidate the effect of strain on the growth of a homo-epitaxial CVD diamond. We have employed laterally confined high dose (MeV) Helium ion implantation to produce surface swelling of the substrate. The strain is enhanced by the lateral confinement of the implanted region to squares of 100 x 100 {mu}m{sup 2}. After ion implantation, micro-Raman spectroscopy was employed to map the surface strain. The substrates were then inserted into a CVD reactor and a CVD diamond film was grown upon them. Since the strained regions were laterally confined, it was then possible to monitor the effect of strain on diamond nucleation. The substrates were also analysed using Rutherford Backscattering Spectroscopy (RBS), Proton induced X-ray Emission (PIXE) and Ion Beam induced Luminescence (IBIL). 7 refs., 5 figs.
Weiser, P S;
Prawer, S;
Nugent, K W;
Bettiol, A A;
Kostidis, L I;
Jamieson, D N
[1]
- Melbourne Univ., Parkville, VIC (Australia). School of Physics
Citation Formats
Weiser, P S, Prawer, S, Nugent, K W, Bettiol, A A, Kostidis, L I, and Jamieson, D N.
Homo-epitaxial diamond film growth on ion implanted diamond substrates.
Australia: N. p.,
1996.
Web.
Weiser, P S, Prawer, S, Nugent, K W, Bettiol, A A, Kostidis, L I, & Jamieson, D N.
Homo-epitaxial diamond film growth on ion implanted diamond substrates.
Australia.
Weiser, P S, Prawer, S, Nugent, K W, Bettiol, A A, Kostidis, L I, and Jamieson, D N.
1996.
"Homo-epitaxial diamond film growth on ion implanted diamond substrates."
Australia.
@misc{etde_524220,
title = {Homo-epitaxial diamond film growth on ion implanted diamond substrates}
author = {Weiser, P S, Prawer, S, Nugent, K W, Bettiol, A A, Kostidis, L I, and Jamieson, D N}
abstractNote = {The nucleation of CVD diamond is a complicated process, governed by many interrelated parameters. In the present work we attempt to elucidate the effect of strain on the growth of a homo-epitaxial CVD diamond. We have employed laterally confined high dose (MeV) Helium ion implantation to produce surface swelling of the substrate. The strain is enhanced by the lateral confinement of the implanted region to squares of 100 x 100 {mu}m{sup 2}. After ion implantation, micro-Raman spectroscopy was employed to map the surface strain. The substrates were then inserted into a CVD reactor and a CVD diamond film was grown upon them. Since the strained regions were laterally confined, it was then possible to monitor the effect of strain on diamond nucleation. The substrates were also analysed using Rutherford Backscattering Spectroscopy (RBS), Proton induced X-ray Emission (PIXE) and Ion Beam induced Luminescence (IBIL). 7 refs., 5 figs.}
place = {Australia}
year = {1996}
month = {Dec}
}
title = {Homo-epitaxial diamond film growth on ion implanted diamond substrates}
author = {Weiser, P S, Prawer, S, Nugent, K W, Bettiol, A A, Kostidis, L I, and Jamieson, D N}
abstractNote = {The nucleation of CVD diamond is a complicated process, governed by many interrelated parameters. In the present work we attempt to elucidate the effect of strain on the growth of a homo-epitaxial CVD diamond. We have employed laterally confined high dose (MeV) Helium ion implantation to produce surface swelling of the substrate. The strain is enhanced by the lateral confinement of the implanted region to squares of 100 x 100 {mu}m{sup 2}. After ion implantation, micro-Raman spectroscopy was employed to map the surface strain. The substrates were then inserted into a CVD reactor and a CVD diamond film was grown upon them. Since the strained regions were laterally confined, it was then possible to monitor the effect of strain on diamond nucleation. The substrates were also analysed using Rutherford Backscattering Spectroscopy (RBS), Proton induced X-ray Emission (PIXE) and Ion Beam induced Luminescence (IBIL). 7 refs., 5 figs.}
place = {Australia}
year = {1996}
month = {Dec}
}